TCA 305 TCA 355. Proximity Switch TCA 305 TCA 355

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1 Proximity Switch TCA 305 Bipolar IC Features Lower open-loop current consumption; IS < 1 ma Lower output saturation voltage The temperature dependence of the switching distance is lower and compensation of the resonant circuit TC (temperature coefficient) is easier The sensitivity is higher, so that larger switching distances are possible and coils of a lower quality can be used PG-DSO-8-1 The switching hysteresis remains constant as regards temperature, supply voltage and switching distance The TCA 305 even functions without external integrating capacitor. With an external capacitor (or with RC combination) good noise immunity can be achieved The outputs are temporarily short-circuit proof (approx. 10 s to 1 min depending on package) PG-DIP-14-1 The outputs are disabled when S < approx. 4.5 and are enabled when the oscillator stabilizes (from S min = 5 ) Higher switching frequencies can be obtained Pb-free lead plating; RoHS compliant PG-DSO-14-1 Type Ordering Code Package TCA 305 A Q67000-A2291 PG-DIP-14-1 TCA 305 G Q67000-A2305 PG-DSO-14-1 (SMD) G Q67000-A2444 PG-DSO-8-1 (SMD) Not for new design Semiconductor Group

2 TCA 305 A G TCA 305 G Pin Configurations (top view) The devices TCA 305 and contain all the functions necessary to design inductive proximity switches. By approaching a standard metal plate to the coil, the resonant circuit is damped and the outputs are switched. Operation Schematic: see TCA 205 The types TCA 305 and have been developed from the type TCA 205 and are outstanding for the following characteristics: Logic Functions Oscillator not damped damped Outputs Q H L L H Semiconductor Group 2

3 Block Diagram Standard Turn-ON Delay Referred to TA = 25 C Semiconductor Group 3

4 Absolute Maximum Ratings Parameter Symbol Limit alues Unit Supply voltage Output voltage Output current IQ 50 ma Distance, hysteresis resistance RDi, RHy 0 Ω Capacitances CI, CD 5 µf Junction temperature Storage temperature range Thermal resistance system - air TCA 305 A TCA 305 G Operating Range S Q Tj Tstg Rth SA Rth SA to 125 C C 85 (135) 2) K/W 140 (200) 2) K/W Supply voltage S 5 to 30 3) Oscillator frequency fosc to 1.5 MHz Ambient temperature TA 25 to 85 C Characteristics S = 12, TA = 25 to 85 C Parameter Open-loop current consumption Reference voltage 1) L-output voltage per output Symbol IS REF Q L Q L Q L Limit alues min. typ. max. Unit Test Condition (1.0) 2) ma outputs open IREF< 10 µa IQ L = 5 ma IQ L = 25 ma IQ L = 50 ma H-output current per output IQ H 10 µa Q H = 30 Threshold at 3 Hysteresis at 3 S 3 Hy Turn-ON delay 1) td ON 25 % % ms/µf TA = 25 C Switching frequency w/o CI fs 5 khz 1) TCA 305 only 2) alues in parenthesis apply to only 3) Operation at voltages less than 5 (between approx. 2.5 and 5 ) is possible, if REF is connected to S. In this case REF is no longer internally stabilized. Additionally, the pin "turn-on delay" is to be applied as follows: If no turn-on delay is needed, this pin has to be connected to S. If, however, a turn-on delay is required, the charge current for DD has to be adjusted with an external resistor between this pin and S (recommended value 390 k Ω). Semiconductor Group 4

5 Oscilator Turn-ON Delay for TCA 305 A; G Integrating Capacitor Outputs Schematic Circuit Diagram Semiconductor Group 5

6 Application Circuit Semiconductor Group 6

7 L0, C0 Resonant circuit RHy Hysteresis adjustment RDi Distance adjustment D Temperature compensation of the resonant circuit; possibly with series resistance for the purpose of adjustment. The diode is not absolutely necessary. Whether it is used or not depends on the temperature coefficient of the resonant circuit. RI; CI Integration element. At pin 3 (integrating capacitance) we recommend a capacitor of typ. 1 nf. To increase noise immunity this capacitor can be substituted by an RC circuit with, e.g., RI = 1 M Ω and CI = 10 nf. CD Delay capacitor Dimensioning Examples in Accordance with CENELEC Standard (flush) Ferrite pot core Number of turns Cross section of wire L0 C0 (STYROFLEX ) fosc Sn RA (Metal) CD M 12 M 18 M 30 M 33 ( ) mm CuL 206 µh 1000 pf appr. 350 khz 4 mm 8.2 k Ω Ω 100 nf N 22 ( ) mm µh 1.2 nf appr. 280 khz 8 mm 33 kω 100 nf N 22 (25 8.9) mm µh 3.3 nf appr. 115 khz 15 mm 22 k Ω kω 100 nf Semiconductor Group 7

8 This datasheet has been downloaded from: Free Download Daily Updated Database 100% Free Datasheet Search Site 100% Free IC Replacement Search Site Convenient Electronic Dictionary Fast Search System All Datasheets Cannot Be Modified Without Permission Copyright Each Manufacturing Company

9 This datasheet has been downloaded from: Free Download Daily Updated Database 100% Free Datasheet Search Site 100% Free IC Replacement Search Site Convenient Electronic Dictionary Fast Search System All Datasheets Cannot Be Modified Without Permission Copyright Each Manufacturing Company

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