High Throughput Maskless lithography

Transcription

1 High Throughput Maskless lithography Bert Jan Kampherbeek M.J. Wieland, G. de Boer, G.F. ten Berge, A.M.C. Houkes, R. Jager, T. van de Peut, J.J.M. Peijster, S.W.H.K. Steenbrink, T.F. Teepen, A.H.V. van Veen

2 Agenda 1. MAPPER introduction 2. Demonstrator results 3. Development roadmap Litho Forum 2008, Bolton Landing (NY) 2

3 Agenda 1. MAPPER introduction 2. Demonstrator results 3. Development roadmap Litho Forum 2008, Bolton Landing (NY) 3

4 Introduction MAPPER: semiconductor equipment company from Delft, The Netherlands Since 2001 developing a new maskless lithography technology for chip manufacturing Office building with 350 m 2 clean room facility, additional 400 m 2 being built Additional university manufacturing clean room facilities Highly qualified engineering staff of 140 people, growing to 180 end of

5 Introduction Multi-beam single field, mechanical x-scan, electrostatic y-scan 300 mm wafer EO slit 13,000 beams EO slit Field 10 mm 26 mm Litho Forum 2008, Bolton Landing (NY) 5

6 Introduction Overview MAPPER machine Electron Source Collimator lens Beam Blanker Array Beam Deflector Array Projection lens Array Writing time for 26 x 33 mm (incl.overhead) Nr of beams Gray levels Grid Data rate Deflection width Deflection frequency # of electrons per CD element Resist sensitivity Current Acceleration voltage Stage passes per field Resist 2.5 sec sec for redundancy 13,000 Black/white 2.25 nm 7.5 GHz per channel 2 μm 6 MHz 4, μc/cm μa 12 na / beam 5 kv 1 Bi / tri -layer 6

7 Introduction Electron beams are switched with light signals Light light detector electrode Wafer amplifier circuit parasitic capacitance Litho Forum 2008, Bolton Landing (NY) 7

8 Introduction MAPPER vs. other e-beam concepts MAPPER Electron source Other e-beam concepts Illumination optics Blanker Mask All beams have their own lenses: No repulsion Demagnifying optics Central point where electrons repel each other Wafer MAPPER uses 5 kv, low voltage, which is best suited for high throughput: Steenbrink et al, SPIE 2008 Litho Forum 2008, Bolton Landing (NY) 8

9 Agenda 1. MAPPER introduction 2. Demonstrator results 3. Development roadmap Litho Forum 2008, Bolton Landing (NY) 9

10 MAPPER Demonstrator overview: 110 parallel beams 110 beams electron optics column No wafer stage: additional deflector installed Demonstrator Optics column Data path Litho Forum 2008, Bolton Landing (NY) 10

11 Measured spot sizes (40-45 nm) 110 spot sizes measured Narrow spot size distribution 11

12 Writing strategy Beam 1 Beam nm grid size 12

13 Writing strategy Beam 1 Beam nm grid size 13

14 Writing strategy Beam 1 Beam nm grid size 14

15 Writing strategy Beam 1 Beam nm grid size 15

16 Writing strategy Beam 1 Beam nm grid size 16

17 Writing strategy Beam 1 Beam nm grid size 45 nm HP 45 nm HP 17

18 Representation of data: 11 x 10 areas of 2 µm x 2 µm Resist process: - 40 nm HSQ on 150 nm AZ photoresist - Images are taken of the photoresist 11 beams 10 beams Litho Forum 2008, Bolton Landing (NY) 18

19 Beam-to-beam uniformity measurements of 40 nm HP exposures 40 nm dense lines Dose: 65 μc/cm 2 19

20 Analysis of SEM images 20

21 Analysis of SEM images CD cell 21

22 40 nm HP beam-to-beam uniformity CD/CDu for 65 beamlets, 70 CD cells per beamlet [ nm ] B2 B4 B6 C1 C4 C6 C8 D3 D5 D7 E1 E3 E5 E7 F2 F4 F6 F8 G2 G4 G6 G8 CD within-beam CDu H3 H5 H7 I1 I3 I5 I7 J2 J4 J6 J8 Beamlet name Average CD is 41.3 nm Beam-to-beam CD-uniformity is 3.2 nm 22

23 Dot patterns: nm half pitch Litho Forum 2008, Bolton Landing (NY) 23

24 SRAM patterns: nm half pitch, no proximity correction Litho Forum 2008, Bolton Landing (NY) 24

25 Agenda 1. MAPPER introduction 2. Demonstrator results 3. Development roadmap Litho Forum 2008, Bolton Landing (NY) 25

26 Development roadmap Target for 2008: Integrate 110 beam system on 300 mm platform Building six systems this year Integration ongoing Modular approach to improve performance step by step and show: stitching high beam current Scaling to 13,000 beams Litho Forum 2008, Bolton Landing (NY) 26

27 Conclusions MAPPER is growing its organization to 180 fte end 2008 Demonstrator machine shows continuous 32 nm node imaging Next step is to enable imaging on 300 mm wafers Modular approach to show stitching, high beam current and scaling to 13,000 beams Litho Forum 2008, Bolton Landing (NY) 27