MASW MASW

Transcription

1 Features Broad Bandwidth Specified up to 18 GHz Usable up to 26 GHz Integrated Bias Network Low Insertion Loss / High Isolation Rugged Fully Monolithic Glass Encapsulate Construction RoHS Compliant* and 26 C Reflow Compatible Description The MASW and devices are SP2T and SP3T broad band switches with integrated bias networks utilizing M/A-COM Technology Solutions HMIC TM (Heterolithic Microwave Integrated Circuit) process, US Patent 5,268,31. This process allows the incorporation silicon pedestals that form series and shunt diodes or vias by imbedding them in low loss, low dispersion glass. By using small spacing between elements, this combination silicon and glass gives HMIC devices low loss and high isolation performance with exceptional repeatability through low millimeter frequencies. Large bond pads facilitate the use low inductance ribbon bonds, while gold backside metallization allows for manual or automatic chip bonding via 8/2 - Au/Sn, 62/36/2 - Sn/Pb/Ag solders or electrically conductive silver epoxy. Parameter Operating Temperature Storage Temperature Junction Temperature Applied Reverse Voltage Absolute Maximum -65 o C to +125 o C -65 o C to +15 o C +175 o C 5V MASW RF Incident Power Bias Current +25 C +33dBm C.W. ±2mA Max. operating conditions for a combination RF power, D.C. bias and temperature: +33dBm 15mA (per C Yellow areas denote wire bond pads 1 * Restrictions on Hazardous Substances, European Union Directive 22/95/EC.

2 MASW (SPDT) Electrical T AMB = +25 o C, 2mA Bias current Parameter Frequency Minimum Nominal Maximum Units Insertion Loss Isolation Input Return Loss 2 GHz db 6 GHz.7 1. db 12 GHz db 18 GHz db 2 GHz 55 6 db 6 GHz 47 5 db 12 GHz 4 45 db 18 GHz 36 4 db 2 GHz 14 db 6 GHz 15 db 12 GHz 15 db 18 GHz 13. db Switching Speed 1-5 ns (SP3T) Electrical T AMB = +25 o C, 2mA Bias current Parameter Frequency Minimum Nominal Maximum Units 2 GHz db Insertion Loss 6 GHz db 12 GHz db 18 GHz db 2 GHz db Isolation 6 GHz 47 5 db 12 GHz 4 45 db 18 GHz 36 4 db 2 GHz 14 db Input Return Loss 6 GHz 15 db 12 GHz 16 db 18 GHz 14 db Switching Speed 1-5 ns Note: 1. Typical switching speed measured from 1% to 9% detected RF signal driven by TTL compatible drivers using RC output spiking network, R = 5 2Ω, C = 39 56pF. 2

3 Typical RF Performance at T A = +25 C, 2mA Bias Current ISOLATION, db ISOLATION vs FREQUENCY MASW ISOLATION, db ISOLATION vs FREQUENCY INSERTION LOSS vs FREQUENCY MASW INSERTION LOSS vs FREQUENCY INSERTION LOSS, db INSERTION LOSS, db RETURN LOSS vs FREQUENCY RETURN LOSS, db

4 MASW Junction Temperature vs. Incident Power at 8 GHz 14 5 ma 12 Series Diode_5mA Series Diode_1mA Tjunction ( Deg. C ) 1 8 Series Diode_2mA Series Diode_4mA 1 ma 2 ma 6 4 ma C.W. Incident Power ( dbm ).8 MASW Compression Power vs. Incident Power at 8 GHz.7.6 Series Diode_5mA Series Diode_1mA Series Diode_2mA Series Diode_4mA 5 ma Compression Power ( db ) ma 2 ma 4 ma C.W. Incident Power ( dbm ) 4 Note: The PIN diodes in the MASW and the have the same electrical characteristics and will have similar performance.

5 Operation the MASW and Operation the MASW and PIN diode switches is achieved by simultaneous application DC currents to the bias pads. The required levels for the different states are shown in the tables below. The on-chip pull-up J1, shown in the schematic below, has a value 4Ω - 6Ω and must be taken into consideration when defining drive circuitry. Driver Connections MASW Driver Connections Control Level I J4 J5 J1 - J2 J1 - J3-2mA +2mA Low Loss Isolation +2mA -2mA Isolation Low Loss Control Level I J5 J6 J7 J1 - J2 J1 - J3 J1 - J4-2mA +2mA +2mA Low Loss Isolation Isolation +2 ma -2mA +2mA Isolation Low Loss Isolation +2mA +2mA -2mA Isolation Isolation Low Loss Equivalent Circuit MASW Equivalent Circuit 5

6 Wire/Ribbon and Die Attachment Recommendations Wire Bonding Thermosonic wedge wire bonding using.25 x.3 ribbon or.1 diameter gold wire is recommended. A heat stage temperature 15 o C and a force 18 to 22 grams should be used. Ultrasonic energy should be adjusted to the minimum required to achieve a good bond. RF bond wires should be kept as short and straight as possible. Chip Mounting The HMIC switches have Ti-Pt-Au back metal. They can be die mounted with a gold-tin eutectic solder preform or conductive epoxy. Mounting surface must be clean and flat. *Note: This device utilizes a process step designed to have minimal to non-existent burring around the perimeter the die. Eutectic Die Attachment: An 8/2, gold-tin, eutectic solder preform is recommended with a work surface temperature 255 o C and a tool tip temperature 265 o C. When hot gas is applied, the tool tip temperature should be 29 o C. The chip should not be exposed to temperatures greater than 32 o C for more than 2 seconds. No more than three seconds should be required for attachment. Solders containing tin should not be used. Epoxy Die Attachment: A minimum amount epoxy should be used. A thin epoxy fillet should be visible around the perimeter the chip after placement. Cure epoxy per manufacturer s schedule (typically o C). MASW Chip Outline Drawing 1,2 INCHES MILLIMETERS DIM MIN MAX MIN MAX A B C D E F G H J.5 REF..129 REF. K.5 REF..129 REF. 6 Notes: 1. Topside and backside metallization is gold, 2.5um thick typical. 2. Yellow areas indicate wire bonding pads

7 Chip Outline Drawing 1,2 DIM INCHES MILLIMETERS MIN MAX MIN MAX A.697, B C D E F G H J K L M.51 REF..129 REF. N.46 REF..118 REF. Notes: 1. Topside and backside metallization is gold, 2.5um thick typical. 2. Yellow areas indicate wire bonding pads Ordering Information Part Number MASW G MASW W G W Package Gel Pack (25 per) Waffle Pack (25 per) Gel Pack (25 Per) Waffle Pack (25 Per) 7