30 GHz 5-Bit Phase Shifter TGP2100

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1 August, 28 3 GHz -Bit Phase Shifter TGP2 Key Features and Performance Positive Control Voltage Single-Ended Logic CMOS Compatible Frequency Range: GHz.2µm phemt 3MI Technology Chip dimensions:.88 x.7 x. mm (.74 x.3 x.4 inches) Preliminary Measured Performance RMS Phase Shift Error (deg) RMS Phase Shift Error RMS Amplitude Error RMS Amplitude Error (db) Phase Error (deg) GHz 29GHz 3GHz 3GHz 32GHz State Note: Datasheet is subject to change without notice.

2 TABLE I MAXIMUM RATINGS August, 28 TGP2 Symbol Parameter Value Notes V C Control Voltage Range - +8 V / 2/ I D Control Supply Current ma / 2/ P IN Input Continuous Wave Power 2 dbm / 2/ P D Power Dissipation. W / 2/ T CH Operating Channel Temperature C 3/ T M Mounting Temperature 32 C (3 Seconds) T STG Storage Temperature -6 to C / These ratings represent the maximum operable values for this device 2/ Combinations of supply voltage, supply current, input power, and output power shall not exceed P D at a package base temperature of 7 C 3/ Junction operating temperature will directly affect the device median time to failure (MTTF). For maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels. 2

3 -3 August, 28 TGP2 Preliminary Measured Data S2 (db) RMS Phase Shift Error (deg) RMS Phase Shift Error RMS Amplitude Error (db) RMS Amplitude Error

4 S (db) S22 (db) Preliminary Measured Data August, 28 TGP

5 Phase Error (deg) Preliminary Measured Data August, 28 TGP2 28GHz 29GHz 3GHz 3GHz 32GHz - Amplitude Error (db) State 28GHz 29GHz 3GHz 3GHz 32GHz State

6 State Table August, 28 TGP2 State V-Supply V-.2 V-22. V-4 V-9 V-8 Phase Shift +V V V V V V Reference +V +V V V V V.2 2 +V V +V V V V V +V +V V V V V V V +V V V 4 +V +V V +V V V V V +V +V V V V +V +V +V V V V V V V +V V 9 9 +V +V V V +V V.2 +V V +V V +V V 2. +V +V +V V +V V V V V +V +V V 3 3 +V +V V +V +V V V V +V +V +V V 7. +V +V +V +V +V V V V V V V +V 8 7 +V +V V V V +V V V +V V V +V V +V +V V V +V V V V +V V +V V +V V +V V +V V V +V +V V +V V +V +V +V V +V V V V V +V +V V +V V V +V +V V V +V V +V +V V +V +V V +V +V V V V +V +V +V V +V V +V +V +V V V +V +V +V +V V +V +V +V +V +V

7 Mechanical Drawing August, 28 TGP2 7

8 Chip Assembly & Bonding Diagram August, 28 TGP2 GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. 8

9 Assembly Process Notes August, 28 TGP2 Reflow process assembly notes: Use AuSn (8/2) solder with limited exposure to temperatures at or above 3 C. (3 seconds maximum) An alloy station or conveyor furnace with reducing atmosphere should be used. No fluxes should be utilized. Coefficient of thermal expansion matching is critical for long-term reliability. Devices must be stored in a dry nitrogen atmosphere. Component placement and adhesive attachment assembly notes: Vacuum pencils and/or vacuum collets are the preferred method of pick up. Air bridges must be avoided during placement. The force impact is critical during auto placement. Organic attachment can be used in low-power applications. Curing should be done in a convection oven; proper exhaust is a safety concern. Microwave or radiant curing should not be used because of differential heating. Coefficient of thermal expansion matching is critical. Interconnect process assembly notes: Thermosonic ball bonding is the preferred interconnect technique. Force, time, and ultrasonics are critical parameters. Aluminum wire should not be used. Maximum stage temperature is 2 C. GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. 9

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