COMPLEMENTARY OUTPUT HALL EFFECT LATCH General Description. Features. Applications

Transcription

1 General Description The is an integrated Hall sensor with output driver designed for electronic commutation of brushless DC motor applications. The device includes an onchip Hall sensor for magnetic sensing, an amplifier that amplifies the Hall voltage, a Schmitt trigger to provide switching hysteresis for noise rejection, a temperature compensation circuit to compensate the temperature drift of Hall sensitivity and two complementary open-collector drivers for sinking large load current. It also includes an internal band-gap regulator which is used to provide bias voltage for internal circuits. Placing the device in a variable magnetic field, if the magnetic flux density is larger than threshold B OP, the pin DO will be turned low (on) and pin DOB will be turned high (off). This output state is held until the magnetic flux density reverses and falls below B RP, then causes DO to be turned high (off) and DOB turned low (on). Features On-Chip Hall Sensor 3.5V to 16V Supply Voltage 350mA (avg) Output Sink Current Reversed Supply Voltage Protection Build in Over Temperature Protection Function -20 o C to 85 o C Operating Temperature Low Profile TO-94 (SIP-4L) Package ESD Rating: 300V (Machine Model) Applications Dual-Coil Brushless DC Motor Dual-Coil Brushless DC Fan Revolution Counting Speed Measurement is available in TO-94 (SIP-4L) package. TO-94 Figure 1. Package Type of 1

2 Pin Configuration Z4 Package (TO-94) GND DOB DO Figure 2. Pin Configuration of (Front View) Pin Description Pin Number Pin Name Function 1 Supply voltage 2 DO Output 1 3 DOB Output 2 4 GND Ground 2

3 Functional Block Diagram 1 2 DO Regulator Temperature Compensation 4 GND Hall Sensor Amplifier Schmitt Trigger Output Driver Over Temperature Protection 3 DOB Figure 3. Functional Block Diagram of Ordering Information - Circuit Type Package Z4: TO-94 (SIP-4L) E1: Lead Free G1: Green Magnetic Characteristics A: 10 to 50Gauss B: 5 to 70Gauss C: 100Gauss Package TO-94 Temperature Range -20 to 85 o C Part Number Marking ID Packing Lead Free Green Lead Free Green Type Z4-AE1 Z4-AG1 Z4-E1 Z4-G1 Bulk Z4-BE1 Z4-BG1 Z4-E1 Z4-G1 Bulk Z4-CE1 Z4-CG1 Z4-E1 Z4-G1 Bulk BCD Semiconductor's Pb-free products, as designated with "E1" suffix in the part number, are RoHS compliant. Products with "G1" suffix are available in green package. 3

4 Absolute Maximum Ratings (Note 1) (T A =25 o C) Parameter Symbol Value Unit Supply Voltage 20 V Reverse Protection Voltage V RCC -20 V Magnetic Flux Density B Unlimited Gauss Output Current Continuous 350 ma Hold I O 550 ma Peak (start up) 750 ma Power Dissipation P D 550 mw Thermal Resistance Die to atmosphere θja 227 o C/W Die to package case θjc 49 o C/W Storage Temperature T STG -50 to 150 o C ESD (Machine Model) 300 V ESD (Human Body Model) 2500 V Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "Recommended Operating Conditions" is not implied. "Absolute Maximum Ratings" for extended period may affect device reliability. Recommended Operating Conditions (T A =25 o C) Parameter Symbol Min Max Unit Supply Voltage V Ambient Temperature T A o C 4

5 Electrical Characteristics (T A =25 o C, =14V, unless otherwise specified) Parameter Symbol Test Condition Min Typ Max Unit Output Saturation Voltage V SAT =3.5V, I O =100mA 0.3 V I O =350mA V Output Leakage Current I OL V CE =16V µa Supply Current I CC =16V, Output Open ma Output Rise Time tr R L =820Ω, C L =20pF µs Output Fall Time tf R L =820Ω, C L =20pF µs Switch Time Differential t R L =820Ω, C L =20pF µs Output Zener Breakdown Voltage V Z 55 V Thermal Protection Temperature TSD 178 o C Thermal Protection Hysteresis TSD 40 o C Magnetic Characteristics (T A =25 o C) Parameter Symbol Grade Min Typ Max Unit Operating Point B OP B 5 70 Gauss A Gauss C 100 Gauss Releasing Point B RP B Gauss A Gauss C -100 Gauss Hysteresis B HYS 75 Gauss V DO (V) Off-state High Turn off B HYS Turn on V SAT Low On-state N B RP 0 B OP S Magnetic Flux Density (Gauss) 5

6 Magnetic Characteristics (Continued) +14V S DO DOB GND Marking Side N R1 820Ω R2 820Ω C1 C2 20pF 20pF DO (V OUT1 ) DOB (V OUT2 ) Figure 4. Basic Test Circuit DO (V) DOB (V) V SAT V SAT Magnetic Flux Density B (Gauss) Magnetic Flux Density B (Gauss) Figure 5. V DO vs. Magnetic Flux Density Figure 6. V DOB vs. Magnetic Flux Density 6

7 Typical Performance Characteristics I CC (ma) Ta=-25 O C Ta=-0 O C 6 Ta=+25 O C Ta=+85 O C (V) B OP /B RP /B HYS (Gauss) B OP B RP B HYS Ta=25 O C (V) Figure 7. I CC vs. Figure 8. B OP /B RP /B HYS vs B OP /B RP /B HYS (Gauss) B OP B RP B HYS T A =+25 O C P D (mw) T A ( O C) T A ( o C) Figure 9. B OP /B RP /B HYS vs. Ambient Temperature Figure 10. P D vs. Ambient Temperature 7

8 Typical Performance Characteristics (Continued) =3.5V =14V =20V I O =100mA I O =200mA I O =300mA I O =350mA I O =400mA I CC (ma) 10 V SAT (mv) T A ( O C) T A ( O C) Figure 11. I CC vs. Ambient Temperature Figure 12. V SAT vs. Ambient Temperature Typical Applications D1 COIL1 COIL2 DO DOB GND R1 470 C1 2.2µF R C2 2.2µF Figure 12. Typical Application Circuit 8

9 Mechanical Dimensions TO-94 Unit: mm(inch) 0.500(0.020) 0.700(0.028) 3.780(0.149) 4.080(0.161) 45 TYP 1.520(0.059) 1.720(0.067) 0.700(0.028) 0.900(0.035) 4.980(0.196) 5.280(0.208) 1.850(0.073) 0.360(0.014) 0.510(0.020) 1.250(0.050) Package Sensor Location (For Hall IC) 0.380(0.015) 0.550(0.022) 3.450(0.136) 3.750(0.148) 0.360(0.014) 0.500(0.020) (0.550) (0.602) 1.270(0.050) TYP 3.710(0.146) 3.910(0.154) 9

10 IMPORTANT NOTICE reserves the right to make changes without further notice to any products or specifications herein. does not assume any responsibility for use of any its products for any particular purpose, nor does assume any liability arising out of the application or use of any its products or circuits. does not convey any license under its patent rights or other rights nor the rights of others. MAIN SITE BCD - Headquarters Semiconductor Manufacturing Limited - Wafer BCD FabSemiconductor Manufacturing Limited BCD - Wafer Semiconductor Fab Manufacturing Limited Shanghai - IC Design SIM-BCD Group Semiconductor Manufacturing Co., Ltd. No. Shanghai 1600, Zi SIM-BCD Xing Road, Semiconductor Shanghai ZiZhu Manufacturing Science-based Limited Industrial Park, , China 800 Yi Advanced Shan Road, Analog Shanghai Circuits , (Shanghai) China Corporation Tel: 800, , Yi Shan Road, Shanghai Fax: , China Tel: F, Zone B, 900, 1491, Yi Fax: Shan Road, Shanghai , China Tel: , Fax: Tel: , Fax: REGIONAL SALES OFFICE REGIONAL Shenzhen OfficeSALES OFFICE Shenzhen Shanghai SIM-BCD Office Semiconductor Manufacturing Co., Ltd., Shenzhen Office Shanghai Unit A Room SIM-BCD 1203, Skyworth Semiconductor Bldg., Gaoxin Manufacturing Ave.1.S., Nanshan Co., Ltd. District, Shenzhen Shenzhen, Office Advanced China Analog Circuits (Shanghai) Corporation Shenzhen Office Taiwan Office BCD Taiwan Semiconductor Office (Taiwan) Company Limited 4F, 298-1, BCD Rui Semiconductor Guang Road, (Taiwan) Nei-Hu District, Company Taipei, Limited Taiwan 4F, 298-1, Rui Guang Road, Nei-Hu District, Taipei, USA Office USA BCD Office Semiconductor Corp. BCD Semiconductor Huntwood Ave. Corporation Hayward, CA 94544, Huntwood USA Ave. Hayward, Room Tel: E, 5F, Noble 7951 Center, No.1006, 3rd Fuzhong Road, Futian District, Shenzhen , China Tel: Taiwan 2808 CA Tel : 94544, U.S.A Tel: Fax: Fax: Fax: Tel: Fax: Tel Fax: : Fax: