2N396 General Purpose Transistors PNP Silicon Features PbFree Packages are Available* COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage V CEO 4 Vdc Collector Base Voltage V CBO 4 Vdc Emitter Base Voltage V EBO. Vdc Collector Current Continuous I C 2 madc Total Device Dissipation @ T A = 2 C Derate above 2 C P D 62. mw mw/ C TO92 CASE 29 STYLE 1 2 BASE 1 EMITTER Total Power Dissipation @ T A = 6 C P D 2 mw Total Device Dissipation @ T C = 2 C Derate above 2 C Operating and Storage Junction Temperature Range P D 1. 12 W mw/ C T J, T stg to +1 C THERMAL CHARACTERISTICS (Note 1) Characteristic Symbol Max Unit Thermal Resistance, JunctiontoAmbient R JA 2 C/W Thermal Resistance, JunctiontoCase R JC 83.3 C/W Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Indicates Data in addition to JEDEC Requirements. 1 1 2 2 3 3 STRAIGHT LEAD BENT LEAD BULK PACK TAPE & REEL AMMO PACK MARKING DIAGRAM 2N 396 ALYW A = Assembly Location L = Wafer Lot Y = Year W = Work Week = PbFree Package (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 3 of this data sheet. *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Semiconductor Components Industries, LLC, 2 February, 2 Rev. 4 1 Publication Order Number: 2N396/D
2N396 ELECTRICAL CHARACTERISTICS (T A = 2 C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS CollectorEmitter Breakdown Voltage (Note 2) (I C = madc, I B = ) V (BR)CEO 4 Vdc CollectorBase Breakdown Voltage (I C = Adc, I E = ) V (BR)CBO 4 Vdc EmitterBase Breakdown Voltage (I E = Adc, I C = ) V (BR)EBO. Vdc Base Cutoff Current (V CE = 3 Vdc, V EB = 3. Vdc) I BL nadc Collector Cutoff Current (V CE = 3 Vdc, V EB = 3. Vdc) I CEX nadc ON CHARACTERISTICS (Note 2) DC Current Gain CollectorEmitter Saturation Voltage (I C =.1 madc, V CE = Vdc) (I C = madc, V CE = Vdc) (I C = madc, V CE = Vdc) (I C = madc, V CE = Vdc) (I C = madc, V CE = Vdc) (I C = madc, I B = madc) (I C = madc, I B =. madc h FE 6 8 6 3 V CE(sat) 3.2.4 Vdc BaseEmitter Saturation Voltage (I C = madc, I B = madc) (I C = madc, I B =. madc) V BE(sat).6.8.9 Vdc SMALLSIGNAL CHARACTERISTICS CurrentGain Bandwidth Product (I C = madc, V CE = 2 Vdc, f = MHz) f T 2 MHz Output Capacitance (V CB =. Vdc, I E =, f = MHz) C obo 4. pf Input Capacitance (V EB =. Vdc, I C =, f = MHz) C ibo pf Input Impedance (I C = madc, V CE = Vdc, f = khz) h ie 2. 12 k Voltage Feedback Ratio (I C = madc, V CE = Vdc, f = khz) h re.1 X 4 SmallSignal Current Gain (I C = madc, V CE = Vdc, f = khz) h fe 4 Output Admittance (I C = madc, V CE = Vdc, f = khz) h oe 3. 6 mhos Noise Figure (I C = Adc, V CE =. Vdc, R S = k, f = khz) NF 4. db SWITCHING CHARACTERISTICS Delay Time (V CC = 3. Vdc, V BE =. Vdc, t d 3 ns Rise Time I C = madc, I B1 = madc) t r 3 ns Storage Time (V CC = 3. Vdc, I C = madc, I B1 = I B2 = madc) t s 22 ns Fall Time (V CC = 3. Vdc, I C = madc, I B1 = I B2 = madc) t f ns 2. Pulse Test: Pulse Width 3 s; Duty Cycle 2%. 2
2N396 ORDERING INFORMATION Device Package Shipping 2N396 TO92 Units / Bulk 2N396G TO92 (PbFree) Units / Bulk 2N396RL1 TO92 2 / Tape & Reel 2N396RL1G TO92 (PbFree) 2 / Tape & Reel 2N396RLRA TO92 2 / Tape & Reel 2N396RLRAG TO92 (PbFree) 2 / Tape & Reel 2N396RLRM TO92 2 / Tape & Ammo Box 2N396RLRMG TO92 (PbFree) 2 / Tape & Ammo Box 2N396RLRP TO92 2 / Tape & Ammo Box 2N396RLRPG TO92 (PbFree) 2 / Tape & Ammo Box For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD811/D. 3 V +. V < 1 ns k 2.6 V 3 ns DUTY CYCLE = 2% C S < 4 pf* * Total shunt capacitance of test jig and connectors Figure 1. Delay and Rise Time Equivalent Test Circuit +9.1 V < 1 ns 3 V 2 k 1N916 C S < 4 pf* < t 1 < s DUTY CYCLE = 2% t 1.9 V * Total shunt capacitance of test jig and connectors Figure 2. Storage and Fall Time Equivalent Test Circuit 3
f 2N396 TYPICAL TRANSIENT CHARACTERISTICS T J = 2 C T J = 12 C CAPACITANCE (pf).. 3. 2..1 C obo C ibo.2.3.. 2. 3... 2 3 4 REVERSE BIAS (VOLTS) Figure 3. Capacitance Q, CHARGE (pc) 3 2 3 2 V CC = 4 V I C /I B = Q T 2. 3... 2 3 2 Figure 4. Charge Data Q A TIME (ns) 3 2 3 2 2. V t d @ V OB = V 2. 3... 2 3 2 Figure. TurnOn Time I C /I B = t r @ V CC = 3. V 1 V 4 V t, FALL TIME (ns) 3 2 3 2 I C /I B = I C /I B = 2 2. 3... 2 3 2 Figure 6. Fall Time V CC = 4 V I B1 = I B2 4
2N396 TYPICAL AUDIO SMALLSIGNAL CHARACTERISTICS NOISE FIGURE VARIATIONS (V CE =. Vdc, T A = 2 C, Bandwidth = Hz) NF, NOISE FIGURE (db). 4. 3. 2. SOURCE RESISTANCE = 2 I C = ma SOURCE RESISTANCE = 2 I C =. ma SOURCE RESISTANCE = 2. k I C = A NF, NOISE FIGURE (db) 12 8 6 4 f = khz I C = ma I C =. ma I C = A SOURCE RESISTANCE = 2. k I C = A 2 I C = A.1.2.4 2. 4. 2 4 f, FREQUENCY (khz).1.2.4 2. 4. 2 4 R g, SOURCE RESISTANCE (k OHMS) Figure. Figure 8. h PARAMETERS (V CE = Vdc, f = khz, T A = 2 C) 3 h fe, DC CURRENT GAIN 2 h oe, OUTPUT ADMITTANCE ( mhos) 3 2 3.1.2.3.. 2. 3....1.2.3.. 2. 3... Figure 9. Current Gain Figure. Output Admittance h ie, INPUT IMPEDANCE (k OHMS) 2.. 3. 2....3.2.1.2.3.. 2. 3... Figure 11. Input Impedance h, VOLTAGE FEEDBACK RATIO (X -4 re ).. 3. 2....1.2.3.. 2. 3... Figure 12. Voltage Feedback Ratio
2N396 TYPICAL STATIC CHARACTERISTICS h FE, DC CURRENT GAIN (NORMALIZED) 2....3.2 T J = +12 C +2 C - C V CE = V.1.1.2.3.. 2. 3... 2 3 2 Figure 13. DC Current Gain V CE, COLLECTOR EMITTER VOLTAGE (VOLTS).8 I C = ma.6.4.2.1.2.3.. T J = 2 C ma 3 ma ma.1.2.3.. 2. 3... I B, BASE CURRENT (ma) Figure 14. Collector Saturation Region V, VOLTAGE (VOLTS).8.6.4.2 T J = 2 C V BE(sat) @ I C /I B = V CE(sat) @ I C /I B = V BE @ V CE = V, TEMPERATURE COEFFICIENTS (mv/ C). -. - - 1. VC FOR V CE(sat) VB FOR V BE(sat) +2 C TO +12 C - C TO +2 C +2 C TO +12 C - C TO +2 C 2.. 2 2 V - 2. 2 4 6 8 12 14 16 18 2 Figure 1. ON Voltages Figure 16. Temperature Coefficients 6
2N396 PACKAGE DIMENSIONS TO92 (TO226) CASE 2911 ISSUE AM R A N B STRAIGHT LEAD BULK PACK NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. P L SEATING INCHES MILLIMETERS PLANE K DIM MIN MAX MIN MAX A.1.2 4.4.2 B.1.2 4.32.33 C.12.16 3.18 4.19 D.16.21.4.33 X X D G.4. 1.1 1.39 H.9. 2.42 2.66 G J.1.2.39. H J K. --- 12. --- V C L.2 --- 6.3 --- N.8. 2.4 2.66 P ---. --- 2.4 SECTION XX R.11 --- 2.93 --- 1 N V.13 --- 3.43 --- R A B BENT LEAD TAPE & REEL AMMO PACK NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. P T MILLIMETERS SEATING PLANE K DIM MIN MAX A 4.4.2 B 4.32.33 C 3.18 4.19 D.4.4 G X X D G 2.4 2.8 J.39. K 12. --- J N 2.4 2.66 V P 1. 4. C R 2.93 --- SECTION XX V 3.43 --- 1 N STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 163, Denver, Colorado 821 USA Phone: 33621 or 8344386 Toll Free USA/Canada Fax: 336216 or 8344386 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 828298 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 9 29 Japan Customer Focus Center Phone: 813338 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative 2N396/D