MPF4392, JFET Switching Traistors NChannel Depletion Features PbFree Packages are Available* MAXIMUM RATINGS Rating Symbol Value Unit DrainSource Voltage V DS 30 Vdc DrainGate Voltag V DG 30 Vdc GateSource Voltage V GS 30 Vdc Forward Gate Current I G(f) madc Total Device Dissipation @ T A = 25 C Derate above 25 C P D 3 2.8 mw mw/ C 3 GATE 2 SOURCE 1 DRAIN Operating and Storage Channel Temperature Range T channel, 65 to +1 C T stg Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditio is not implied. Extended exposure to stresses above the Recommended Operating Conditio may affect device reliability. 1 1 2 2 3 3 STRAIGHT LEAD BULK PACK BENT LEAD TAPE & REEL AMMO PACK TO92 (TO226AA) CASE 2911 STYLE 5 MARKING DIAGRAM MPF 439x AYWW MPF439x = Device Code x = 2 or 3 A = Assembly Location Y = Year WW = Work Week = PbFree Package (Note: Microdot may be in either location) ORDERING INFORMATION Device Package Shipping MPF4392 TO92 00 Units / Bulk MPF4392G TO92 00 Units / Bulk (PbFree) TO92 00 Units / Bulk *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. G TO92 (PbFree) 00 Units / Bulk RLRP TO92 00 / Ammo Box RLRPG TO92 00 / Ammo Box (PbFree) Semiconductor Components Industries, LLC, 12 February, 12 Rev. 6 1 Publication Order Number: MPF4392/D
MPF4392, ELECTRICAL CHARACTERISTICS (T A = 25 C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS GateSource Breakdown Voltage V (BR)GSS (I G = Adc, V DS = 0) 30 Vdc Gate Reverse Current (V GS = Vdc, V DS = 0) (V GS = Vdc, V DS = 0, T A = 0 C) I GSS 0.2 nadc Adc DrainCutoff Current (V DS = Vdc, V GS = 12 Vdc) (V DS = Vdc, V GS = 12 Vdc, T A = 0 C) I D(off) nadc Adc Gate Source Voltage (V DS = Vdc, I D = nadc) MPF4392 V GS 0.5 3.0 Vdc ON CHARACTERISTICS ZeroGateVoltage Drain Current (Note 1) (V DS = Vdc, V GS = 0) MPF4392 I DSS 25 75 30 madc DrainSource OnVoltage (I D = 6.0 madc, V GS = 0) MPF4392 (I D = 3.0 madc, V GS = 0) V DS(on) 0.4 0.4 Vdc Static DrainSource On Resistance (I D = madc, V GS = 0) MPF4392 r DS(on) 60 0 SMALLSIGNAL CHARACTERISTICS Forward Trafer Admittance (V DS = Vdc, I D = 25 madc, f = khz) MPF4392 (V DS = Vdc, I D = madc, f = khz) y fs 17 12 mmhos DrainSource ON Resistance (V GS = 0, I D = 0, f = khz) MPF4392 r ds(on) 60 0 Input Capacitance (V GS = Vdc, V DS = 0, f = MHz) C iss 6.0 pf Reverse Trafer Capacitance (V GS = 12 Vdc, V DS = 0, f = MHz) (V DS = Vdc, I D = madc, f = MHz) C rss 2.5 3.2 3.5 pf SWITCHING CHARACTERISTICS Rise Time (See Figure 2) (I D(on) = 6.0 madc) MPF4392 (I D(on) = 3.0 madc) t r 2.5 Fall Time (See Figure 4) (V GS(off) = 7.0 Vdc) MPF4392 (V GS(off) = Vdc) t f 29 35 TurnOn Time (See Figures 1 and 2) (I D(on) = 6.0 madc) MPF4392 (I D(on) = 3.0 madc) t on 4.0 6.5 TurnOff Time (See Figures 3 and 4) (V GS(off) = 7.0 Vdc) MPF4392 (V GS(off) = Vdc) t off 37 35 55 1. Pulse Test: Pulse Width 300 s, Duty Cycle 3.0%. 2
t f t d(on), TURN-ON DELAY TIME (), TURN-OFF DELAY TIME () t d(off) t 00 0 0 0 0.5 0.7 3.0 7.0 00 0 0 0 Figure 1. TurnOn Delay Time Figure 3. TurnOff Delay Time MPF4392, TYPICAL SWITCHING CHARACTERISTICS 30 0.5 0.7 3.0 7.0 30 00 T J = 25 C 0 T J = 25 C MPF4392 V GS(off) = 7.0 V MPF4392 0 = V 0, RISE TIME () r, FALL TIME () 0.5 0.7 3.0 7.0 30 Figure 2. Rise Time 00 T J = 25 C T 0 J = 25 C MPF4392 V GS(off) = 7.0 V MPF4392 0 = V 0 0.5 0.7 3.0 7.0 30 Figure 4. Fall Time V GS(off) = 7.0 V = V V GS(off) = 7.0 V = V 3
MPF4392, R GEN V GEN INPUT INPUT PULSE t r 0.25 t f 0.5 PULSE WIDTH = s DUTY CYCLE % SET V DS(off) = V R K R GG V GG R GG R K R D = R D (R T + ) R D + R T + V DD R D Figure 5. Switching Time Test Circuit R T OUTPUT NOTE 1 The switching characteristics shown above were measured using a test circuit similar to Figure 5. At the beginning of the switching interval, the gate voltage is at Gate Supply Voltage (V GG ). The DrainSource Voltage (V DS ) is slightly lower than Drain Supply Voltage (V DD ) due to the voltage divider. Thus Reverse Trafer Capacitance (C rss ) or GateDrain Capacitance (C gd ) is charged to V GG + V DS. During the turnon interval, GateSource Capacitance (C gs ) discharges through the series combination of R Gen and R K. C gd must discharge to V DS(on) through R G and R K in series with the parallel combination of effective load impedance (R D ) and DrainSource Resistance (r ds ). During the turnoff, this charge flow is reversed. Predicting turnon time is somewhat difficult as the channel resistance r ds is a function of the gatesource voltage. While C gs discharges, V GS approaches zero and r ds decreases. Since C gd discharges through r ds, turnon time is nonlinear. During turnoff, the situation is reversed with r ds increasing as C gd charges. The above switching curves show two impedance conditio: 1) R K is equal to R D which simulates the switching behavior of cascaded stages where the driving source impedance is normally the load impedance of the previous stage, and 2) (low impedance) the driving source impedance is that of the generator. y fs, FORWARD TRANSFER ADMITTANCE (mmhos) 7.0 3.0 V DS = V MPF4392 0.5 0.7 3.0 7.0 30 Figure 6. Typical Forward Trafer Admittance C, CAPACITANCE (pf) 7.0 3.0 1.5 0.03 0.05 (C ds IS NEGLIGIBLE) C gs C gd 0.1 0.3 0.5 3.0 30 V R, REVERSE VOLTAGE (VOLTS) Figure 7. Typical Capacitance r ds(on), DRAIN-SOURCE ON-STATE RESISTANCE (OHMS) 0 160 1 80 40 0 0 I DSS = ma 25 ma ma 75 ma 0 ma 125 ma 3.0 4.0 6.0 7.0 8.0 V GS, GATE-SOURCE VOLTAGE (VOLTS) Figure 8. Effect of GateSource Voltage On DrainSource Resistance ds(on), DRAIN-SOURCE ON-STATE RESISTANCE (NORMALIZED) r 1.8 1.6 1.4 1.2 0.8 0.6 0.4-70 I D = ma V GS = 0-40 - 80 1 140 170 T channel, CHANNEL TEMPERATURE ( C) Figure 9. Effect of Temperature On DrainSource OnState Resistance 4
MPF4392, r ds(on), DRAIN-SOURCE ON-STATE RESISTANCE (OHMS) 0 90 80 70 60 40 30 r DS(on) @ V GS = 0 V GS(off) 0 0 30 40 60 70 80 90 0 1 1 130 140 1 I DSS, ZERO-GATE VOLTAGE DRAIN CURRENT (ma) Figure. Effect of I DSS On DrainSource Resistance and GateSource Voltage 9.0 8.0 7.0 6.0 4.0 3.0 V GS, GATE-SOURCE VOLTAGE (VOLTS) NOTE 2 The ZeroGateVoltage Drain Current (I DSS ), is the principle determinant of other JFET characteristics. Figure shows the relatiohip of GateSource Off Voltage (V GS(off) ) and DrainSource On Resistance (r ds(on) ) to I DSS. Most of the devices will be within ±% of the values shown in Figure. This data will be useful in predicting the characteristic variatio for a given part number. For example: Unknown r ds(on) and V GS range for an MPF4392 The electrical characteristics table indicates that an MPF4392 has an I DSS range of 25 to 75 ma. Figure shows r ds(on) = 52 for I DSS = 25 ma and 30 for I DSS 75 ma. The corresponding V GS values are 2.2 V and 4.8 V. 5
MPF4392, PACKAGE DIMENSIONS TO92 (TO226) CASE 2911 ISSUE AM R A N B NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. P L SEATING INCHES MILLIMETERS PLANE K DIM MIN MAX MIN MAX A 0.175 0.5 4.45 5. B 0.170 0.2 4.32 5.33 C 0.125 0.165 3.18 4.19 D 0.016 0.021 0.407 0.533 X X D G 0.045 0.055 1. 1.39 H 0.095 0.5 2.42 2.66 G J 0.0 0.0 0.39 0. H J K 0.0 --- 12.70 --- V C L 0.2 --- 6.35 --- N 0.080 0.5 4 2.66 P --- 0.0 --- 2.54 SECTION XX R 0.1 --- 2.93 --- 1 N V 0.135 --- 3.43 --- R A B STRAIGHT LEAD BULK PACK BENT LEAD TAPE & REEL AMMO PACK STYLE 5: PIN 1. DRAIN 2. SOURCE 3. GATE NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. P T MILLIMETERS SEATING PLANE K DIM MIN MAX A 4.45 5. B 4.32 5.33 C 3.18 4.19 D 0.40 0.54 G X X D G 2.40 2.80 J 0.39 0. K 12.70 --- J N 4 2.66 V P 1. 4.00 C R 2.93 --- SECTION XX V 3.43 --- 1 N ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, coequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specificatio can and do vary in different applicatio and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any licee under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applicatio intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless agait all claims, costs, damages, and expees, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 3036752175 or 8003443860 Toll Free USA/Canada Fax: 3036752176 or 8003443867 Toll Free USA/Canada Email: orderlit@oemi.com N. American Technical Support: 8002829855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 29 Japan Customer Focus Center Phone: 8135817 6 ON Semiconductor Website: www.oemi.com Order Literature: http://www.oemi.com/orderlit For additional information, please contact your local Sales Representative MPF4392/D