NOT RECOMMENDED FOR NEW DESIGN

Size: px
Start display at page:

Download "NOT RECOMMENDED FOR NEW DESIGN"

Transcription

1 Technical Data RF Power Field Effect Transistor N- Channel Enhancement- Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies up to 00 MHz. The high gain and broadband performance of this device make it ideal for large- signal, common- source amplifier applications in 26 volt base station equipment. Typical Performance at 945 MHz, 26 Volts Output Power 30 Watts PEP Power Gain 20 db Efficiency 41% (Two Tones) IMD -31 dbc Integrated ESD Protection Capable of Handling 5:1 26 Vdc, 945 MHz, 30 Watts CW Output Power Features Excellent Thermal Stability Characterized with Series Equivalent Large- Signal Impedance Parameters Dual- Lead Boltdown Plastic Package Can Also Be Used As Surface Mount. 200 C Capable Plastic Package N Suffix Indicates Lead- Free Terminations. RoHS Compliant. TO in Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel. Table 1. Maximum Ratings Rating Symbol Value Unit Drain-Source Voltage V DSS - 0.5, +65 Vdc Gate-Source Voltage V GS - 0.5, + 15 Vdc Total Device T C = 25 C Derate above 25 C P D Storage Temperature Range T stg - 65 to +150 C Operating Junction Temperature T J 200 C Table 2. Thermal Characteristics W W/ C Characteristic Symbol Value (1) Unit Thermal Resistance, Junction to Case R θjc 1.08 C/W Table 3. ESD Protection Characteristics Human Body Model Machine Model Charge Device Model Table 4. Moisture Sensitivity Level Test Conditions Document Number: MRF9030N Rev. 12, 9/ MHz, 30 W, 26 V LATERAL N- CHANNEL BROADBAND RF POWER MOSFET CASE , STYLE 1 TO PLASTIC Class 1 (Minimum) M2 (Minimum) C7 (Minimum) Test Methodology Rating Package Peak Temperature Unit Per JESD 22- A113, IPC/JEDEC J- STD C 1. MTTF calculator available at Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product., Inc., All rights reserved. 1

2 Table 5. Electrical Characteristics (T c = 25 c Unless Otherwise Noted) Characteristic Symbol Min Typ Max Unit Off Characteristics Zero Gate Voltage Drain Leakage Current (V DS = 65 Vdc, V GS = 0 Vdc) I DSS μadc Zero Gate Voltage Drain Leakage Current (V DS = 26 Vdc, V GS = 0 Vdc) Gate- Source Leakage Current (V GS = 5 Vdc, V DS = 0 Vdc) On Characteristics Gate Threshold Voltage (V DS = Vdc, I D = 0 μadc) Gate Quiescent Voltage (V DS = 26 Vdc, I D = 250 madc) Drain- Source On- Voltage (V GS = Vdc, I D = 0.7 Adc) Forward Transconductance (V DS = Vdc, I D = 2 Adc) Dynamic Characteristics Input Capacitance (V DS = 26 Vdc ± 30 1 MHz, V GS = 0 Vdc) Output Capacitance (V DS = 26 Vdc ± 30 1 MHz, V GS = 0 Vdc) Reverse Transfer Capacitance (V DS = 26 Vdc ± 30 1 MHz, V GS = 0 Vdc) Functional Tests (In Freescale Test Fixture) Two- Tone Common- Source Amplifier Power Gain f1 = MHz, f2 = MHz) Two- Tone Drain Efficiency f1 = MHz, f2 = MHz) 3rd Order Intermodulation Distortion f1 = MHz, f2 = MHz) Input Return Loss f1 = MHz, f2 = MHz) Two- Tone Common- Source Amplifier Power Gain f1 = MHz, f2 = MHz and f1 = MHz, f2 = MHz) Two- Tone Drain Efficiency f1 = MHz, f2 = MHz and f1 = MHz, f2 = MHz) 3rd Order Intermodulation Distortion f1 = MHz, f2 = MHz and f1 = MHz, f2 = MHz) Input Return Loss f1 = MHz, f2 = MHz and f1 = MHz, f2 = MHz) I DSS 1 μadc I GSS 1 μadc V GS(th) Vdc V GS(Q) Vdc V DS(on) Vdc g fs 2.7 S C iss 49 pf C oss 27 pf C rss 1.2 pf G ps db η % IMD dbc IRL db G ps 20 db η 40.5 % IMD -31 dbc IRL -12 db 2

3 V GG B1 B C8 C7 L1 L2 C15 C16 C17 C18 V DD RF INPUT Z1 C1 Z2 Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 Z Z3 Z4 Z5 Z6 Z7 C2 Z x Microstrip x Microstrip x 0.0 Microstrip x Microstrip x Microstrip x x 0.520, Taper x Microstrip x Microstrip x Microstrip () x Microstrip (MRF9030NBR1) x Microstrip () 0.2 x Microstrip (MRF9030NBR1) Z8 Z9 C5 DUT Z x Microstrip Z x Microstrip Z x Microstrip Z x Microstrip Z x Microstrip Z x Microstrip Z x Microstrip Z x Microstrip Board Taconic RF , ε r = 3.5 Figure MHz Broadband Test Circuit Schematic Z11 C3 C4 C6 C C11 C12 Table MHz Broadband Test Circuit Component Designations and Values Part Description Part Number Manufacturer B1 Short Ferrite Bead, Surface Mount Fair- Rite B2 Long Ferrite Bead, Surface Mount Fair- Rite C1, C7, C14, C15 47 pf Chip Capacitors ATC0B470JT500XT ATC C Variable Capacitor, Gigatrim 27271SL Johanson C3, C pf Chip Capacitors ATC0B3R6BT500XT ATC C4, C Variable Capacitors, Gigatrim 27291SL Johanson C5, C6 6.8 pf Chip Capacitors ATC0B7R5JT500XT ATC C8, C16, C17 μf, 35 V Tantulum Chip Capacitors T491D6K035AT Kemet C9, C pf Chip Capacitors ATC0B0JT500XT ATC C pf Chip Capacitor () Variable Capacitor, Gigatrim (MRF9030NBR1) C9 Z12 Z13 Z14 Z15 ATC0B1R8BT500XT 27271SL Z16 Z17 C13 C14 Z18 ATC Johanson C μf Electrolytic Chip Capacitor MCAX63V227M13X22 Multicomp L1, L nh Coilcraft Inductors A04T- 5 Coilcraft RF OUTPUT 3

4 C18 C1 C8 V GG B1 C2 C7 L1 C5 C3 C4 WB1 C6 CUT OUT AREA 900 MHz Rev 02 Figure MHz Broadband Test Circuit Component Layout C15 B2 C16 C17 V DD L2 C9 WB2 C C11 C12 C13 Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. C14 4

5 TYPICAL CHARACTERISTICS G ps, POWER GAIN (db) INTERMODULATION DISTORTION (dbc) IMD, I DQ = 375 ma 300 ma 250 ma 200 ma 1 G ps, POWER GAIN (db) G ps η IMD IRL V DD = 26 Vdc 34 P out = 30 W (PEP) 15 I DQ = 250 ma Two Tone, 0 khz Tone Spacing f, FREQUENCY (MHz) Figure 3. Class AB Broadband Circuit Performance V DD = 26 Vdc f1 = 945 MHz f2 = MHz P out, OUTPUT POWER (WATTS) PEP Figure 4. Power Gain versus Output Power V DD = 26 Vdc I DQ = 250 ma f1 = 945 MHz f2 = MHz 1 3rd Order 5th Order 7th Order P out, OUTPUT POWER (WATTS) PEP Figure 6. Intermodulation Distortion Products versus Output Power 0 0 G ps, POWER GAIN (db) INTERMODULATION DISTORTION (dbc) IMD, , DRAIN EFFICIENCY (%) IMD, INTERMODULATION DISTORTION (dbc) I DQ = 200 ma 250 ma ma IRL, INPUT RETURN LOSS (db) 375 ma P out, OUTPUT POWER (WATTS) PEP V DD = 26 Vdc f1 = 945 MHz f2 = MHz Figure 5. Intermodulation Distortion versus Output Power 20 G ps η V DD = 26 Vdc I DQ = 250 ma f = 945 MHz 1 P out, OUTPUT POWER (WATTS) AVG. Figure 7. Power Gain and Efficiency versus Output Power η, DRAIN EFFICIENCY (%) 5

6 TYPICAL CHARACTERISTICS G ps, POWER GAIN (db) MTTF FACTOR (HOURS X AMPS 2 ) G ps η V DD = 26 Vdc 16 I DQ = 250 ma f1 = 945 MHz 0 f2 = MHz IMD P out, OUTPUT POWER (WATTS) PEP Figure 8. Power Gain, Efficiency and IMD versus Output Power T J, JUNCTION TEMPERATURE ( C) This above graph displays calculated MTTF in hours x ampere 2 drain current. Life tests at elevated temperatures have correlated to better than ±% of the theoretical prediction for metal failure. Divide MTTF factor by I 2 D for MTTF in a particular application Figure 9. MTTF Factor versus Junction Temperature 2 η, DRAIN EFFICIENCY (%) INTERMODULATION DISTORTION (dbc) IMD, 6

7 f = 930 MHz f MHz Z source Ω j j j0.170 Z load Ω j j j0.17 Z source = Test circuit impedance as measured from gate to ground. Z load = Test circuit impedance as measured from drain to ground. Note: Z source Input Matching Network f = 960 MHz V DD = 26 V, I DQ = 250 ma, P out = 30 Watts (PEP) Z load was chosen based on tradeoffs between gain, output power, drain efficiency and intermodulation distortion. Z source Z o = 5 Ω Device Under Test f = 960 MHz f = 930 MHz Z load Z load Output Matching Network Figure. Series Equivalent Source and Load Impedance 7

8 PACKAGE DIMENSIONS 8

9 9

10

11 PRODUCT DOCUMENTATION Refer to the following documents to aid your design process. Application Notes AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins EB212: Using Data Sheet Impedances for RF LDMOS Devices The following table summarizes revisions to this document. REVISION HISTORY Revision Date Description 12 Sept Data sheet revised to reflect part status change, p. 1, including use of applicable overlay. Replaced Case Outline with , Issue K, p. 1, 8-. Corrected cross hatch pattern in bottom view and changed its dimensions (D2 and E3) to minimum value on source contact (D2 changed from Min-Max to.290 Min; E3 changed from Min-Max to.150 Min). Added JEDEC Standard Package Number. Updated Part Numbers in Table 6, Component Designations and Values, to RoHS compliant part numbers, p. 3 Removed Fig. 3, Test Circuit Component Layout (MRF9030NBR1) and Fig. 12, Series Equivalent Source and Load Impedance (MRF9030NBR1), renumbered Figures accordingly, p. 4-7 Added Product Documentation and Revision History, p

12 How to Reach Us: Home Page: Web Support: USA/Europe or Locations Not Listed:, Inc. Technical Information Center, EL East Elliot Road Tempe, Arizona or Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen Muenchen, Germany (English) (English) (German) (French) Japan: Japan Ltd. Headquarters ARCO Tower 15F 1-8-1, Shimo-Meguro, Meguro-ku, Tokyo Japan or Asia/Pacific: China Ltd. Exchange Building 23F No. 118 Jianguo Road Chaoyang District Beijing 0022 China For Literature Requests Only: Literature Distribution Center P.O. Box 5405 Denver, Colorado or Fax: Information in this document is provided solely to enable system and software implementers to use products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. reserves the right to make changes without further notice to any products herein. makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Typical parameters that may be provided in data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals, must be validated for each customer application by customer s technical experts. does not convey any license under its patent rights nor the rights of others. products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the product could create a situation where personal injury or death may occur. Should Buyer purchase or use products for any such unintended or unauthorized application, Buyer shall indemnify and hold and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Freescale Semiconductor was negligent regarding the design or manufacture of the part. Freescale and the Freescale logo are trademarks of, Inc. All other product or service names are the property of their respective owners., Inc All rights reserved. Document Number: MRF9030N 12 Rev. 12, 9/2008 RoHS-compliant and/or Pb-free versions of Freescale products have the functionality and electrical characteristics of their non-rohs-compliant and/or non-pb-free counterparts. For further information, see or contact your Freescale sales representative. For information on Freescale s Environmental Products program, go to

NOT RECOMMENDED FOR NEW DESIGN

NOT RECOMMENDED FOR NEW DESIGN Technical Data RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies up to 00 MHz. The high gain and

More information

NOT RECOMMENDED FOR NEW DESIGN

NOT RECOMMENDED FOR NEW DESIGN Technical Data RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and

More information

RF Power Field Effect Transistors N- Channel Enhancement- Mode Lateral MOSFETs

RF Power Field Effect Transistors N- Channel Enhancement- Mode Lateral MOSFETs Technical Data RF Power Field Effect Transistors N- Channel Enhancement- Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with frequencies from 864 to 894 MHz. Suitable for

More information

RF Power LDMOS Transistors Enhancement--Mode Lateral MOSFETs

RF Power LDMOS Transistors Enhancement--Mode Lateral MOSFETs Freescale Semiconductor Technical Data RF Power LDMOS Transistors Enhancement--Mode Lateral MOSFETs These 90 W RF power LDMOS transistors are designed for wideband RF power amplifiers covering the frequency

More information

RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Technical Data RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1930 to 1990 MHz. Can be used in Class AB

More information

RF Power LDMOS Transistor High Ruggedness N--Channel Enhancement--Mode Lateral MOSFET

RF Power LDMOS Transistor High Ruggedness N--Channel Enhancement--Mode Lateral MOSFET Freescale Semiconductor Technical Data RF Power LDMOS Transistor High Ruggedness N--Channel Enhancement--Mode Lateral MOSFET RF power transistor suitable for both narrowband and broadband CW or pulse applications

More information

RF Power Field Effect Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs

RF Power Field Effect Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs Technical Data RF Power Field Effect Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR industrial (including laser

More information

NOT RECOMMENDED FOR NEW DESIGN

NOT RECOMMENDED FOR NEW DESIGN echnical Data RF Power Field Effect ransistor N- Channel Enhancement- ode Lateral OSFE Designed for broadband commercial and industrial applications with frequencies up to 1000 Hz. he high gain and broadband

More information

Connecting Low-Cost External Electrodes to MED-EKG

Connecting Low-Cost External Electrodes to MED-EKG Freescale Semiconductor Document Number: AN4223 Application Note Rev. 0, 11/2010 Connecting Low-Cost External Electrodes to MED-EKG by: Carlos Casillas RTAC Americas Guadalajara Mexico 1 Introduction This

More information

UGF09030. 30W, 1 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET

UGF09030. 30W, 1 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET 30W, 1 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for base station applications in the frequency band 800MHz to 1000MHz. Rated with a minimum output power of 30W, it

More information

Freescale Semiconductor. Integrated Silicon Pressure Sensor. On-Chip Signal Conditioned, Temperature Compensated and Calibrated MPX4080D.

Freescale Semiconductor. Integrated Silicon Pressure Sensor. On-Chip Signal Conditioned, Temperature Compensated and Calibrated MPX4080D. Freescale Semiconductor Integrated Silicon Pressure Sensor + On-Chip Signal Conditioned, Temperature Compensated and Calibrated The series piezoresistive transducer is a state-of-the-art monolithic silicon

More information

IRTC Compensation and 1 Hz Clock Generation

IRTC Compensation and 1 Hz Clock Generation Freescale Semiconductor Document Number: AN4257 Application Note Rev. 0, January 2011 IRTC Compensation and 1 Hz Clock Generation by: Derek Liu Applications Engineering Shanghai 1 Introduction The MC9S08GW64

More information

How To Control A Motor Control On An Hvac Platform

How To Control A Motor Control On An Hvac Platform Freescale Semiconductor Document Number:AN4616 Application Note Rev. 0, 10/2012 Flap Motor Control Based On HVAC Platform by: Shawn Shi, Albert Chen, Alex Liu 1 Introduction According to the world market

More information

P D 215 1.25 Operating Junction Temperature T J 200 C Storage Temperature Range T stg 65 to +150 C

P D 215 1.25 Operating Junction Temperature T J 200 C Storage Temperature Range T stg 65 to +150 C SEMICONDUCTOR TECHNICAL DATA Order this document by /D The RF Line The is designed for output stages in band IV and V TV transmitter amplifiers. It incorporates high value emitter ballast resistors, gold

More information

How To Build A Project On An Eclipse Powerbook For Anarc (Powerbook) On An Ipa (Powerpoint) On A Microcontroller (Powerboard) On Microcontrollers (Powerstation) On Your Microcontroller 2 (Powerclock

How To Build A Project On An Eclipse Powerbook For Anarc (Powerbook) On An Ipa (Powerpoint) On A Microcontroller (Powerboard) On Microcontrollers (Powerstation) On Your Microcontroller 2 (Powerclock Freescale Semiconductor Document Number: AN4819 Application Note Rev. 1, 10/2013 Building a Project using IAR Eclipse Plugin Processor Expert Microcontrollers Driver Suite Processor Expert Microcontrollers

More information

Handling Freescale Pressure Sensors

Handling Freescale Pressure Sensors Freescale Semiconductor Application Note Rev 3, 11/2006 Handling Freescale Pressure by: William McDonald INTRODUCTION Smaller package outlines and higher board densities require the need for automated

More information

NTMS4920NR2G. Power MOSFET 30 V, 17 A, N Channel, SO 8 Features

NTMS4920NR2G. Power MOSFET 30 V, 17 A, N Channel, SO 8 Features NTMS9N Power MOSFET 3 V, 7 A, N Channel, SO Features Low R DS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices

More information

MC13783 Buck and Boost Inductor Sizing

MC13783 Buck and Boost Inductor Sizing Freescale Semiconductor Application Note Document Number: AN3294 Rev. 0.1, 01/2010 MC13783 Buck and Boost Inductor Sizing by: Power Management Application Team 1 Introduction The purpose of this application

More information

2N5460, 2N5461, 2N5462. JFET Amplifier. P Channel Depletion. Pb Free Packages are Available* Features. http://onsemi.com MAXIMUM RATINGS

2N5460, 2N5461, 2N5462. JFET Amplifier. P Channel Depletion. Pb Free Packages are Available* Features. http://onsemi.com MAXIMUM RATINGS 2N546, 2N5461, JFET Amplifier PChannel Depletion Features PbFree Packages are Available* MAXIMUM RATINGS Rating Symbol Value Unit Drain Gate Voltage V DG 4 Vdc Reverse Gate Source Voltage V GSR 4 Vdc Forward

More information

Windows 7: Using USB TAP on a Classic CodeWarrior Installation (MGT V9.2 DSC V8.3)

Windows 7: Using USB TAP on a Classic CodeWarrior Installation (MGT V9.2 DSC V8.3) Freescale Semiconductor Document Number: AN4338 Application Note Rev. 1.0, 12/2011 Windows 7: Using USB TAP on a Classic CodeWarrior Installation (MGT V9.2 DSC V8.3) Technical Information & Commercial

More information

Software Real Time Clock Implementation on MC9S08LG32

Software Real Time Clock Implementation on MC9S08LG32 Freescale Semiconductor Document Number: AN4478 Rev. 0, 03/2012 Software Real Time Clock Implementation on MC9S08LG32 by: Nitin Gupta Automotive and Industrial Solutions Group 1 Introduction The MC9S08LG32

More information

MMBF4391LT1G, SMMBF4391LT1G, MMBF4392LT1G, MMBF4393LT1G. JFET Switching Transistors. N Channel

MMBF4391LT1G, SMMBF4391LT1G, MMBF4392LT1G, MMBF4393LT1G. JFET Switching Transistors. N Channel LT1G, SLT1G, LT1G, LT1G JFET Switching Transistors NChannel Features S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ1 Qualified and PPAP Capable

More information

Connecting to an SMTP Server Using the Freescale NanoSSL Client

Connecting to an SMTP Server Using the Freescale NanoSSL Client Freescale Semiconductor Document Number: AN4363 Application Note Rev. 0, 10/2011 Connecting to an SMTP Server Using the Freescale NanoSSL Client by: Paolo Alcantara Microcontroller Solutions Group 1 Introduction

More information

Freescale Embedded GUI Converter Utility 2.0 Quick User Guide

Freescale Embedded GUI Converter Utility 2.0 Quick User Guide Freescale Semiconductor User Guide Document Number: EGUICUG Rev. 1, 08/2010 Freescale Embedded GUI Converter Utility 2.0 Quick User Guide 1 Introduction The Freescale Embedded GUI Converter Utility 2.0

More information

etpu Host Interface by:

etpu Host Interface by: Freescale Semiconductor Application Note AN2821 Rev. 2, 08/2007 etpu Host Interface by: David Paterson Ming Li MCD Applications 1 Introduction This application note discusses the enhanced Time Processing

More information

Local Interconnect Network (LIN) Physical Interface

Local Interconnect Network (LIN) Physical Interface Freescale Semiconductor Engineering Bulletin EB215 Rev. 1.0, 03/2005 Local Interconnect Network (LIN) Physical Interface Difference Between MC33399 and MC33661 Introduction This engineering bulletin highlights

More information

Cyclic Redundant Checker Calculation on Power Architecture Technology and Comparison of Big-Endian Versus Little-Endian

Cyclic Redundant Checker Calculation on Power Architecture Technology and Comparison of Big-Endian Versus Little-Endian Freescale Semiconductor Document Number:AN4657 Application Note Rev. 0, 01/2013 Cyclic Redundant Checker Calculation on Power Architecture Technology and Comparison of Big-Endian Versus Little-Endian by:

More information

Blood Pressure Monitor Using Flexis QE128 Gabriel Sanchez RTAC Americas

Blood Pressure Monitor Using Flexis QE128 Gabriel Sanchez RTAC Americas Freescale Semiconductor Application Note Document Number: AN3500 Rev. 0, 08/2007 Blood Pressure Monitor Using Flexis QE128 by: Gabriel Sanchez RTAC Americas 1 Introduction Product designers and developers

More information

Flexible Active Shutter Control Interface using the MC1323x

Flexible Active Shutter Control Interface using the MC1323x Freescale Semiconductor Document Number: AN4353 Application Note Rev. 0, 9/2011 Flexible Active Shutter Control Interface using the MC1323x by: Dennis Lui Freescale Hong Kong 1 Introduction This application

More information

Using WinUSB in a Visual Studio Project with Freescale USB device controller

Using WinUSB in a Visual Studio Project with Freescale USB device controller Freescale Semiconductor Document Number: AN4378 Application Note Rev. 0, 10/2011 Using WinUSB in a Visual Studio Project with Freescale USB device controller by: Paolo Alcantara Microcontroller Solutions

More information

Hardware Configurations for the i.mx Family USB Modules

Hardware Configurations for the i.mx Family USB Modules Freescale Semiconductor Application Note Document Number: AN4136 Rev. 0, 06/2010 Hardware Configurations for the i.mx Family USB Modules by Multimedia Applications Division Freescale Semiconductor, Inc.

More information

Using the Performance Monitor Unit on the e200z760n3 Power Architecture Core

Using the Performance Monitor Unit on the e200z760n3 Power Architecture Core Freescale Semiconductor Document Number: AN4341 Application Note Rev. 1, 08/2011 Using the Performance Monitor Unit on the e200z760n3 Power Architecture Core by: Inga Harris MSG Application Engineering

More information

Installation of the MMA955xL CodeWarrior Service Pack Author: Fengyi Li Application Engineer

Installation of the MMA955xL CodeWarrior Service Pack Author: Fengyi Li Application Engineer Freescale Semiconductor Application Note Document Number: AN4128 Rev. 0, 10/2011 Installation of the MMA955xL CodeWarrior Service Pack Author: Fengyi Li Application Engineer 1 Overview The Freescale MMA955xL

More information

How to Convert 3-Axis Directions and Swap X-Y Axis of Accelerometer Data within Android Driver by: Gang Chen Field Applications Engineer

How to Convert 3-Axis Directions and Swap X-Y Axis of Accelerometer Data within Android Driver by: Gang Chen Field Applications Engineer Freescale Semiconductor Application Note Document Number: AN4317 Rev. 0, 08/2011 How to Convert 3-Axis Directions and Swap X-Y Axis of Accelerometer Data within Android Driver by: Gang Chen Field Applications

More information

2N6387, 2N6388. Plastic Medium-Power Silicon Transistors DARLINGTON NPN SILICON POWER TRANSISTORS 8 AND 10 AMPERES 65 WATTS, 60-80 VOLTS

2N6387, 2N6388. Plastic Medium-Power Silicon Transistors DARLINGTON NPN SILICON POWER TRANSISTORS 8 AND 10 AMPERES 65 WATTS, 60-80 VOLTS 2N6388 is a Preferred Device Plastic MediumPower Silicon Transistors These devices are designed for generalpurpose amplifier and lowspeed switching applications. Features High DC Current Gain h FE = 2500

More information

Understanding LCD Memory and Bus Bandwidth Requirements ColdFire, LCD, and Crossbar Switch

Understanding LCD Memory and Bus Bandwidth Requirements ColdFire, LCD, and Crossbar Switch Freescale Semiconductor Application Note Document Number: AN3606 Rev. 0, 03/2008 Understanding LCD Memory and Bus Bandwidth Requirements ColdFire, LCD, and Crossbar Switch by: Melissa Hunter TSPG Applications

More information

2N6056. NPN Darlington Silicon Power Transistor DARLINGTON 8 AMPERE SILICON POWER TRANSISTOR 80 VOLTS, 100 WATTS

2N6056. NPN Darlington Silicon Power Transistor DARLINGTON 8 AMPERE SILICON POWER TRANSISTOR 80 VOLTS, 100 WATTS NPN Darlington Silicon Power Transistor The NPN Darlington silicon power transistor is designed for general purpose amplifier and low frequency switching applications. High DC Current Gain h FE = 3000

More information

Freescale Semiconductor. Integrated Silicon Pressure Sensor. On-Chip Signal Conditioned, Temperature Compensated and Calibrated MPX5500.

Freescale Semiconductor. Integrated Silicon Pressure Sensor. On-Chip Signal Conditioned, Temperature Compensated and Calibrated MPX5500. Freescale Semiconductor Integrated Silicon Pressure Sensor + On-Chip Signal Conditioned, Temperature Compensated and Calibrated Series Pressure Rev 7, 09/2009 0 to 500 kpa (0 to 72.5 psi) 0.2 to 4.7 V

More information

Programming Audio Applications in the i.mx21 MC9328MX21

Programming Audio Applications in the i.mx21 MC9328MX21 Freescale Semiconductor Application Note Document Number: AN2628 Rev. 1, 10/2005 Programming Audio Applications in the MC9328MX21 by: Alfred Sin 1 Abstract The MC9328MX21 () processor has two dedicated

More information

Heterojunction Bipolar Transistor Technology (InGaP HBT) Broadband High Linearity Amplifier

Heterojunction Bipolar Transistor Technology (InGaP HBT) Broadband High Linearity Amplifier Freescale Semiconductor Technical Data Heterojunction Bipolar Transistor Technology (InGaP HBT) Broadband High Linearity Amplifier The is a general purpose amplifier that is input and output internally

More information

PD 40 0.23 Storage Temperature Range Tstg 65 to +150 C Junction Temperature TJ 200 C

PD 40 0.23 Storage Temperature Range Tstg 65 to +150 C Junction Temperature TJ 200 C SEMICONDUCTOR TECHNICAL DATA Order this document by MRF228/D The RF Line... designed for. volt VHF large signal power amplifiers in commercial and industrial FM equipment. Compact.28 Stud Package Specified.

More information

How To Measure Power Of A Permanent Magnet Synchronous Motor

How To Measure Power Of A Permanent Magnet Synchronous Motor Freescale Semiconductor Document Number:AN4680 Application Note Rev. 0, 02/2013 PMSM Electrical Parameters Measurement by: Viktor Bobek 1 Introduction The vector control, also known as the field-oriented

More information

TSM2N7002K 60V N-Channel MOSFET

TSM2N7002K 60V N-Channel MOSFET SOT-23 SOT-323 Pin Definition: 1. Gate 2. Source 3. Drain PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (ma) 5 @ V GS = 10V 100 60 5.5 @ V GS = 5V 100 Features Low On-Resistance ESD Protection High Speed Switching

More information

BLL6G1214L-250. 1. Product profile. LDMOS L-band radar power transistor. 1.1 General description. 1.2 Features and benefits. 1.

BLL6G1214L-250. 1. Product profile. LDMOS L-band radar power transistor. 1.1 General description. 1.2 Features and benefits. 1. BLL6G1214L-25 Rev. 1 16 February 212 Preliminary data sheet 1. Product profile 1.1 General description 25 W LDMOS power transistor intended for L-band radar applications in the 1.2 GHz to 1.4 GHz range.

More information

Point-of-Sale (POS) Users Guide Lech José Olmedo Guerrero Jaime Herrerro Gallardo RTAC Americas

Point-of-Sale (POS) Users Guide Lech José Olmedo Guerrero Jaime Herrerro Gallardo RTAC Americas Freescale Semiconductor Users Guide Document Number: POSUG Rev. 0, 03/2007 Point-of-Sale (POS) Users Guide by: Lech José Olmedo Guerrero Jaime Herrerro Gallardo RTAC Americas 1 Introduction This quick

More information

2N3906. General Purpose Transistors. PNP Silicon. Pb Free Packages are Available* http://onsemi.com. Features MAXIMUM RATINGS

2N3906. General Purpose Transistors. PNP Silicon. Pb Free Packages are Available* http://onsemi.com. Features MAXIMUM RATINGS 2N396 General Purpose Transistors PNP Silicon Features PbFree Packages are Available* COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage V CEO 4 Vdc Collector Base Voltage V

More information

Improving Embedded Software Test Effectiveness in Automotive Applications

Improving Embedded Software Test Effectiveness in Automotive Applications Improving Embedded Software Test Effectiveness in Automotive Applications Author, D Brook Document Number: CODETESTTECHWP Rev. 0 11/2005 As the automotive industry introduces more and more safety-critical,

More information

MPXAZ6115A MPXHZ6115A SERIES. Freescale Semiconductor Technical Data. MPXAZ6115A Rev 4, 01/2007

MPXAZ6115A MPXHZ6115A SERIES. Freescale Semiconductor Technical Data. MPXAZ6115A Rev 4, 01/2007 Freescale Semiconductor Technical Data Media Resistant and High Temperature Accuracy Integrated Silicon Pressure Sensor for Measuring Absolute Pressure, On-Chip Signal Conditioned, Temperature Compensated

More information

2N3903, 2N3904. General Purpose Transistors. NPN Silicon. Pb Free Packages are Available* Features. http://onsemi.com MAXIMUM RATINGS

2N3903, 2N3904. General Purpose Transistors. NPN Silicon. Pb Free Packages are Available* Features. http://onsemi.com MAXIMUM RATINGS N393, General Purpose Transistors NPN Silicon Features PbFree Packages are Available* MAXIMUM RATINGS Rating Symbol Value Unit CollectorEmitter Voltage V CEO 4 Vdc CollectorBase Voltage V CBO 6 Vdc EmitterBase

More information

RF Power LDMOS Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs

RF Power LDMOS Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs Freescale Semiconductor Technical Data RF Power LDMOS Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs RF power transistors designed for both narrowband and broadband ISM, broadcast

More information

Vdc. Vdc. Adc. W W/ C T J, T stg 65 to + 200 C

Vdc. Vdc. Adc. W W/ C T J, T stg 65 to + 200 C 2N6284 (NPN); 2N6286, Preferred Device Darlington Complementary Silicon Power Transistors These packages are designed for general purpose amplifier and low frequency switching applications. Features High

More information

Initializing the TSEC Controller

Initializing the TSEC Controller Freescale Semiconductor Application Note Document Number: AN2925 Rev. 0, 11/2005 Initializing the TSEC Controller by Ahsan Kabir Digital Systems Division Freescale Semiconductor, Inc. Austin, TX This application

More information

LOW POWER NARROWBAND FM IF

LOW POWER NARROWBAND FM IF Order this document by MC336B/D The MC336B includes an Oscillator, Mixer, Limiting Amplifier, Quadrature Discriminator, Active Filter, Squelch, Scan Control and Mute Switch. This device is designed for

More information

Power MOSFET. IRF510PbF SiHF510-E3 IRF510 SiHF510. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 100 V Gate-Source Voltage V GS ± 20

Power MOSFET. IRF510PbF SiHF510-E3 IRF510 SiHF510. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 100 V Gate-Source Voltage V GS ± 20 Power MOSFET PRODUCT SUMMARY (V) 100 R DS(on) () = 0.54 Q g max. (nc) 8.3 Q gs (nc) 2.3 Q gd (nc) 3.8 Configuration Single D TO220AB G FEATURES Dynamic dv/dt rating Available Repetitive avalanche rated

More information

Generate Makefiles from Command Line Support in Eclipse-Based CodeWarrior Software

Generate Makefiles from Command Line Support in Eclipse-Based CodeWarrior Software Freescale Semiconductor Document Number: AN4272 Application Note Rev. 0, 03/2011 Generate Makefiles from Command Line Support in Eclipse-Based CodeWarrior Software by Devtech Customer Engineering Freescale

More information

Power MOSFET FEATURES. IRFZ44PbF SiHFZ44-E3 IRFZ44 SiHFZ44 T C = 25 C

Power MOSFET FEATURES. IRFZ44PbF SiHFZ44-E3 IRFZ44 SiHFZ44 T C = 25 C Power MOSFET PRODUCT SUMMARY (V) 60 R DS(on) (Ω) V GS = 10 V 0.028 Q g (Max.) (nc) 67 Q gs (nc) 18 Q gd (nc) 25 Configuration Single FEATURES Dynamic dv/dt Rating 175 C Operating Temperature Fast Switching

More information

Freescale Semiconductor. Integrated Silicon Pressure Sensor

Freescale Semiconductor. Integrated Silicon Pressure Sensor Freescale Semiconductor Rev 7, 1/2009 Integrated Silicon Sensor + Manifold Absolute Sensor On-Chip Signal Conditioned, Temperature Compensated and Calibrated The series Manifold Absolute (MAP) sensor for

More information

Power MOSFET FEATURES. IRL540PbF SiHL540-E3 IRL540 SiHL540

Power MOSFET FEATURES. IRL540PbF SiHL540-E3 IRL540 SiHL540 Power MOSFET PRODUCT SUMMARY (V) 100 R DS(on) (Ω) = 5.0 V 0.077 Q g (Max.) (nc) 64 Q gs (nc) 9.4 Q gd (nc) 27 Configuration Single TO220AB G DS ORDERING INFORMATION Package Lead (Pb)free SnPb G D S NChannel

More information

2N3903, 2N3904. General Purpose Transistors. NPN Silicon. Features Pb Free Package May be Available. The G Suffix Denotes a Pb Free Lead Finish

2N3903, 2N3904. General Purpose Transistors. NPN Silicon. Features Pb Free Package May be Available. The G Suffix Denotes a Pb Free Lead Finish N393, N393 is a Preferred Device General Purpose Transistors NPN Silicon Features PbFree Package May be Available. The GSuffix Denotes a PbFree Lead Finish MAXIMUM RATINGS Rating Symbol Value Unit CollectorEmitter

More information

BC546B, BC547A, B, C, BC548B, C. Amplifier Transistors. NPN Silicon. Pb Free Package is Available* Features. http://onsemi.com MAXIMUM RATINGS

BC546B, BC547A, B, C, BC548B, C. Amplifier Transistors. NPN Silicon. Pb Free Package is Available* Features. http://onsemi.com MAXIMUM RATINGS B, A, B, C, B, C Amplifier Transistors NPN Silicon Features PbFree Package is Available* COLLECTOR 1 2 BASE MAXIMUM RATINGS Collector-Emitter oltage Collector-Base oltage Rating Symbol alue Unit CEO 65

More information

STN3NF06L. N-channel 60 V, 0.07 Ω, 4 A, SOT-223 STripFET II Power MOSFET. Features. Application. Description

STN3NF06L. N-channel 60 V, 0.07 Ω, 4 A, SOT-223 STripFET II Power MOSFET. Features. Application. Description N-channel 60 V, 0.07 Ω, 4 A, SOT-223 STripFET II Power MOSFET Features Type V DSS (@Tjmax) Exceptional dv/dt capability Avalanche rugged technology 100% avalanche tested R DS(on) max STN3NF06L 60 V < 0.1

More information

MMBZ52xxBLT1G Series, SZMMBZ52xxBLT3G. Zener Voltage Regulators. 225 mw SOT 23 Surface Mount

MMBZ52xxBLT1G Series, SZMMBZ52xxBLT3G. Zener Voltage Regulators. 225 mw SOT 23 Surface Mount MMBZ5xxBLTG Series, SZMMBZ5xxBLTG Series Zener Voltage Regulators 5 mw SOT Surface Mount This series of Zener diodes is offered in the convenient, surface mount plastic SOT package. These devices are designed

More information

P-Channel 1.25-W, 1.8-V (G-S) MOSFET

P-Channel 1.25-W, 1.8-V (G-S) MOSFET Si5DS P-Channel.5-W,.-V (G-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A).5 at V GS = -.5 V ±.5 -.7 at V GS = -.5 V ±. at V GS = -. V ± FEATURES Halogen-free According to IEC 9-- Available TrenchFET

More information

2N4921G, 2N4922G, 2N4923G. Medium-Power Plastic NPN Silicon Transistors 1.0 AMPERE GENERAL PURPOSE POWER TRANSISTORS 40 80 VOLTS, 30 WATTS

2N4921G, 2N4922G, 2N4923G. Medium-Power Plastic NPN Silicon Transistors 1.0 AMPERE GENERAL PURPOSE POWER TRANSISTORS 40 80 VOLTS, 30 WATTS ,, Medium-Power Plastic NPN Silicon Transistors These highperformance plastic devices are designed for driver circuits, switching, and amplifier applications. Features Low Saturation Voltage Excellent

More information

BC327, BC327-16, BC327-25, BC327-40. Amplifier Transistors. PNP Silicon. These are Pb Free Devices* http://onsemi.com. Features MAXIMUM RATINGS

BC327, BC327-16, BC327-25, BC327-40. Amplifier Transistors. PNP Silicon. These are Pb Free Devices* http://onsemi.com. Features MAXIMUM RATINGS BC327, BC327-16, BC327-25, BC327-4 Amplifier Transistors PNP Silicon Features These are PbFree Devices* MAXIMUM RATINGS Rating Symbol Value Unit CollectorEmitter Voltage V CEO 45 Vdc CollectorEmitter Voltage

More information

Using eflexpwm Module for ADC Synchronization in MC56F82xx and MC56F84xx Family of Digital Signal Controllers

Using eflexpwm Module for ADC Synchronization in MC56F82xx and MC56F84xx Family of Digital Signal Controllers Freescale Semiconductor Document Number:AN4675 Application Note Rev. 0, 01/2013 Using eflexpwm Module for ADC Synchronization in MC56F82xx and MC56F84xx Family of Digital Signal Controllers by: Pavel Grasblum

More information

TIP41, TIP41A, TIP41B, TIP41C (NPN); TIP42, TIP42A, TIP42B, TIP42C (PNP) Complementary Silicon Plastic Power Transistors

TIP41, TIP41A, TIP41B, TIP41C (NPN); TIP42, TIP42A, TIP42B, TIP42C (PNP) Complementary Silicon Plastic Power Transistors TIP41, TIP41A, TIP41B, TIP41C (NPN); TIP42, TIP42A, TIP42B, TIP42C (PNP) Complementary Silicon Plastic Power Transistors Designed for use in general purpose amplifier and switching applications. Features

More information

How To Fit A 2Mm Exposed Pad To A Dfn Package

How To Fit A 2Mm Exposed Pad To A Dfn Package EVERSPIN s New 2mm Exposed Pad DFN Package Meets Both SOIC-8 and DFN8 PCB Layouts This Application Note is to inform Everspin customers that a new, DFN8 package with a 2mm bottom exposed pad has been added

More information

2N4401. General Purpose Transistors. NPN Silicon. Pb Free Packages are Available* http://onsemi.com. Features MAXIMUM RATINGS THERMAL CHARACTERISTICS

2N4401. General Purpose Transistors. NPN Silicon. Pb Free Packages are Available* http://onsemi.com. Features MAXIMUM RATINGS THERMAL CHARACTERISTICS General Purpose Transistors NPN Silicon Features PbFree Packages are Available* MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage V CEO 4 Vdc Collector Base Voltage V CBO 6 Vdc Emitter

More information

DISCRETE SEMICONDUCTORS DATA SHEET M3D060. BLF177 HF/VHF power MOS transistor. Product specification Supersedes data of 1998 Jul 02.

DISCRETE SEMICONDUCTORS DATA SHEET M3D060. BLF177 HF/VHF power MOS transistor. Product specification Supersedes data of 1998 Jul 02. DISCRETE SEMICONDUCTORS DATA SHEET M3D6 Supersedes data of 1998 Jul 2 23 Jul 21 FEATURES High power gain Low intermodulation distortion Easy power control Good thermal stability Withstands full load mismatch.

More information

Power MOSFET FEATURES. IRF610PbF SiHF610-E3 IRF610 SiHF610. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 200 V Gate-Source Voltage V GS ± 20

Power MOSFET FEATURES. IRF610PbF SiHF610-E3 IRF610 SiHF610. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 200 V Gate-Source Voltage V GS ± 20 Power MOSFET PRODUCT SUMMARY (V) 00 R DS(on) ( ) = 1.5 Q g (Max.) (nc) 8. Q gs (nc) 1.8 Q gd (nc) 4.5 Configuration Single FEATURES Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of

More information

P2N2222ARL1G. Amplifier Transistors. NPN Silicon. These are Pb Free Devices* Features. http://onsemi.com

P2N2222ARL1G. Amplifier Transistors. NPN Silicon. These are Pb Free Devices* Features. http://onsemi.com Amplifier Transistors NPN Silicon Features These are PbFree Devices* MAXIMUM RATINGS (T A = 25 C unless otherwise noted) Characteristic Symbol Value Unit CollectorEmitter Voltage V CEO 4 CollectorBase

More information

DISCRETE SEMICONDUCTORS DATA SHEET. BLF244 VHF power MOS transistor

DISCRETE SEMICONDUCTORS DATA SHEET. BLF244 VHF power MOS transistor DISCRETE SEMICONDUCTORS DATA SHEET September 1992 FEATURES High power gain Low noise figure Easy power control Good thermal stability Withstands full load mismatch Gold metallization ensures excellent

More information

1SMB59xxBT3G Series, SZ1SMB59xxT3G Series. 3 Watt Plastic Surface Mount Zener Voltage Regulators

1SMB59xxBT3G Series, SZ1SMB59xxT3G Series. 3 Watt Plastic Surface Mount Zener Voltage Regulators 9xxBTG Series, SZ9xxTG Series Watt Plastic Surface Mount Zener Voltage Regulators This complete new line of W Zener diodes offers the following advantages. Features Zener Voltage Range. V to V ESD Rating

More information

ESD7484. 4-Line Ultra-Large Bandwidth ESD Protection

ESD7484. 4-Line Ultra-Large Bandwidth ESD Protection 4-Line Ultra-Large Bandwidth ESD Protection Functional Description The ESD7484 chip is a monolithic, application specific discrete device dedicated to ESD protection of the HDMI connection. It also offers

More information

BC546B, BC547A, B, C, BC548B, C. Amplifier Transistors. NPN Silicon. Pb Free Packages are Available* Features. http://onsemi.com MAXIMUM RATINGS

BC546B, BC547A, B, C, BC548B, C. Amplifier Transistors. NPN Silicon. Pb Free Packages are Available* Features. http://onsemi.com MAXIMUM RATINGS B, A, B, C, B, C Amplifier Transistors NPN Silicon Features PbFree Packages are Available* COLLECTOR MAXIMUM RATINGS Collector - Emitter oltage Collector - Base oltage Rating Symbol alue Unit CEO 65 45

More information

MCF54418 NAND Flash Controller

MCF54418 NAND Flash Controller Freescale Semiconductor Application Note Document Number: AN4348 Rev. 0, 09/2011 MCF54418 NAND Flash Controller by: Liew Tsi Chung Applications Engineer 1 Introduction The ColdFire MCF5441x family is the

More information

MC33064DM 5 UNDERVOLTAGE SENSING CIRCUIT

MC33064DM 5 UNDERVOLTAGE SENSING CIRCUIT Order this document by MC3464/D The MC3464 is an undervoltage sensing circuit specifically designed for use as a reset controller in microprocessor-based systems. It offers the designer an economical solution

More information

LC03-6R2G. Low Capacitance Surface Mount TVS for High-Speed Data Interfaces. SO-8 LOW CAPACITANCE VOLTAGE SUPPRESSOR 2 kw PEAK POWER 6 VOLTS

LC03-6R2G. Low Capacitance Surface Mount TVS for High-Speed Data Interfaces. SO-8 LOW CAPACITANCE VOLTAGE SUPPRESSOR 2 kw PEAK POWER 6 VOLTS Low Capacitance Surface Mount TVS for High-Speed Data terfaces The LC3- transient voltage suppressor is designed to protect equipment attached to high speed communication lines from ESD, EFT, and lighting.

More information

Features. Symbol JEDEC TO-220AB

Features. Symbol JEDEC TO-220AB Data Sheet June 1999 File Number 2253.2 3A, 5V,.4 Ohm, N-Channel Power MOSFET This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching

More information

MTD3055VT4. http://onsemi.com. MAXIMUM RATINGS (T C = 25 C unless otherwise noted) MARKING DIAGRAMS ORDERING INFORMATION. R DS(on) TYP 60 V 100 m

MTD3055VT4. http://onsemi.com. MAXIMUM RATINGS (T C = 25 C unless otherwise noted) MARKING DIAGRAMS ORDERING INFORMATION. R DS(on) TYP 60 V 100 m MTD55V Preferred Device Power MOSFET Amps, 6 Volts NChannel This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching

More information

STP60NF06. N-channel 60V - 0.014Ω - 60A TO-220 STripFET II Power MOSFET. General features. Description. Internal schematic diagram.

STP60NF06. N-channel 60V - 0.014Ω - 60A TO-220 STripFET II Power MOSFET. General features. Description. Internal schematic diagram. N-channel 60V - 0.014Ω - 60A TO-220 STripFET II Power MOSFET General features Type V DSS R DS(on) I D STP60NF06 60V

More information

MPS2222, MPS2222A. NPN Silicon. Pb Free Packages are Available* http://onsemi.com. Features MAXIMUM RATINGS MARKING DIAGRAMS THERMAL CHARACTERISTICS

MPS2222, MPS2222A. NPN Silicon. Pb Free Packages are Available* http://onsemi.com. Features MAXIMUM RATINGS MARKING DIAGRAMS THERMAL CHARACTERISTICS , is a Preferred Device General Purpose Transistors NPN Silicon Features PbFree Packages are Available* COLLECTOR 3 MAXIMUM RATINGS CollectorEmitter Voltage CollectorBase Voltage Rating Symbol Value Unit

More information

MC14008B. 4-Bit Full Adder

MC14008B. 4-Bit Full Adder 4-Bit Full Adder The MC4008B 4bit full adder is constructed with MOS PChannel and NChannel enhancement mode devices in a single monolithic structure. This device consists of four full adders with fast

More information

Simple Method of Changing the Frequency Range of a Power Amplifier Circuit

Simple Method of Changing the Frequency Range of a Power Amplifier Circuit Freescale Semiconductor Application Note AN4859 Rev. 0, 8/2014 Simple Method of Changing the Frequency Range of a Power Amplifier Circuit Amplifier designers often face the challenge of modifying an existing

More information

1N59xxBRNG Series. 3 W DO-41 Surmetic 30 Zener Voltage Regulators

1N59xxBRNG Series. 3 W DO-41 Surmetic 30 Zener Voltage Regulators W DO-4 Surmetic 0 Zener Voltage Regulators This is a N9xxBRNG series with limits and excellent operating characteristics that reflect the superior capabilities of silicon oxide passivated junctions. All

More information

USB HID bootloader for the MC9S08JM60

USB HID bootloader for the MC9S08JM60 Freescale Semiconductor Document Number: AN4252 Application Note Rev. 0, 4/2011 USB HID bootloader for the MC9S08JM60 by: Derek Lau System and Solution Engineering, Microcontroller Solutions Group Hong

More information

TPN4R712MD TPN4R712MD. 1. Applications. 2. Features. 3. Packaging and Internal Circuit. 2014-12 2015-04-21 Rev.4.0. Silicon P-Channel MOS (U-MOS )

TPN4R712MD TPN4R712MD. 1. Applications. 2. Features. 3. Packaging and Internal Circuit. 2014-12 2015-04-21 Rev.4.0. Silicon P-Channel MOS (U-MOS ) MOSFETs Silicon P-Channel MOS (U-MOS) TPN4R712MD TPN4R712MD 1. Applications Lithium-Ion Secondary Batteries Power Management Switches 2. Features (1) Low drain-source on-resistance: R DS(ON) = 3.8 mω (typ.)

More information

Power MOSFET FEATURES. IRF740PbF SiHF740-E3 IRF740 SiHF740. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 400 V Gate-Source Voltage V GS ± 20

Power MOSFET FEATURES. IRF740PbF SiHF740-E3 IRF740 SiHF740. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 400 V Gate-Source Voltage V GS ± 20 Power MOSFET PRODUCT SUMMARY (V) 400 R DS(on) (Ω) = 0.55 Q g (Max.) (nc) 63 Q gs (nc) 9.0 Q gd (nc) 3 Configuration Single FEATURES Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of

More information

MMSZxxxT1G Series, SZMMSZxxxT1G Series. Zener Voltage Regulators. 500 mw SOD 123 Surface Mount

MMSZxxxT1G Series, SZMMSZxxxT1G Series. Zener Voltage Regulators. 500 mw SOD 123 Surface Mount MMSZxxxTG Series, SZMMSZxxxTG Series Zener Voltage Regulators 5 mw SOD 3 Surface Mount Three complete series of Zener diodes are offered in the convenient, surface mount plastic SOD 3 package. These devices

More information

Performance Monitor on PowerQUICC II Pro Processors

Performance Monitor on PowerQUICC II Pro Processors Freescale Semiconductor Application Note Document Number: AN3359 Rev. 0, 05/2007 Performance Monitor on PowerQUICC II Pro Processors by Harinder Rai Network Computing Systems Group Freescale Semiconductor,

More information

Ref Parameters Symbol Conditions Min Typ Max Units. Standby 3.5 10 μa. 3 Range 50 115 kpa. 4 Resolution 0.15 kpa. 5 Accuracy -20ºC to 85ºC ±1 kpa

Ref Parameters Symbol Conditions Min Typ Max Units. Standby 3.5 10 μa. 3 Range 50 115 kpa. 4 Resolution 0.15 kpa. 5 Accuracy -20ºC to 85ºC ±1 kpa Freescale Semiconductor Miniature I 2 C Digital Barometer The is an absolute pressure sensor with digital output for low cost applications. A miniature 5 x 3 x 1.2 mm LGA package ideally suits it for portable

More information

LM350. 3.0 A, Adjustable Output, Positive Voltage Regulator THREE TERMINAL ADJUSTABLE POSITIVE VOLTAGE REGULATOR

LM350. 3.0 A, Adjustable Output, Positive Voltage Regulator THREE TERMINAL ADJUSTABLE POSITIVE VOLTAGE REGULATOR 3. A, able Output, Positive Voltage Regulator The is an adjustable threeterminal positive voltage regulator capable of supplying in excess of 3. A over an output voltage range of 1.2 V to 33 V. This voltage

More information

STP60NF06FP. N-channel 60V - 0.014Ω - 30A TO-220FP STripFET II Power MOSFET. General features. Description. Internal schematic diagram.

STP60NF06FP. N-channel 60V - 0.014Ω - 30A TO-220FP STripFET II Power MOSFET. General features. Description. Internal schematic diagram. N-channel 60V - 0.014Ω - 30A TO-220FP STripFET II Power MOSFET General features Type V DSS R DS(on) I D STP60NF06FP 60V

More information

2N2222A. Small Signal Switching Transistor. NPN Silicon. MIL PRF 19500/255 Qualified Available as JAN, JANTX, and JANTXV. http://onsemi.com.

2N2222A. Small Signal Switching Transistor. NPN Silicon. MIL PRF 19500/255 Qualified Available as JAN, JANTX, and JANTXV. http://onsemi.com. Small Signal Switching Transistor NPN Silicon Features MILPRF19/ Qualified Available as JAN, JANTX, and JANTXV COLLECTOR MAXIMUM RATINGS (T A = unless otherwise noted) Characteristic Symbol Value Unit

More information

PowerQUICC II Pro (MPC83xx) PCI Agent Initialization

PowerQUICC II Pro (MPC83xx) PCI Agent Initialization Freescale Semiconductor Application Note Document Number: AN3373 Rev. 0, 04/2007 PowerQUICC II Pro (MPC83xx) PCI Agent Initialization by: David Smith Field Application Engineering Raleigh, NC In many designs,

More information

Power MOSFET FEATURES. IRF520PbF SiHF520-E3 IRF520 SiHF520. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 100 V Gate-Source Voltage V GS ± 20

Power MOSFET FEATURES. IRF520PbF SiHF520-E3 IRF520 SiHF520. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 100 V Gate-Source Voltage V GS ± 20 Power MOSFET PRODUCT SUMMARY (V) 100 R DS(on) ( ) = 0.7 Q g (Max.) (nc) 16 Q gs (nc) 4.4 Q gd (nc) 7.7 Configuration Single TO0AB G DS ORDERING INFORMATION Package Lead (Pb)free SnPb G D S NChannel MOSFET

More information

NUD4011. Low Current LED Driver

NUD4011. Low Current LED Driver NUD0 Low LED Driver This device is designed to replace discrete solutions for driving LEDs in AC/DC high voltage applications (up to 00 V). An external resistor allows the circuit designer to set the drive

More information

3EZ6.2D5 Series. 3 Watt DO-41 Surmetic 30 Zener Voltage Regulators

3EZ6.2D5 Series. 3 Watt DO-41 Surmetic 30 Zener Voltage Regulators EZ6.D Series Watt DO- Surmetic Zener Voltage Regulators This is a complete series of Watt Zener diodes with limits and excellent operating characteristics that reflect the superior capabilities of silicon-oxide

More information

SEMICONDUCTOR TECHNICAL DATA

SEMICONDUCTOR TECHNICAL DATA SEMICONDUCTOR TECHNICAL DATA Order this document by MPX5050/D The MPX5050 series piezoresistive transducer is a state of the art monolithic silicon pressure sensor designed for a wide range of applications,

More information