STW88N65M5 STWA88N65M5 N-channel 650 V, 0.024 Ω typ., 84 A, MDmesh V Power MOSFETs in TO-247 and TO-247 long leads packages Features Datasheet - production data 1 2 3 TO-247 TO-247 long leads Figure 1. Internal schematic diagram Order codes STW88N65M5 STWA88N65M5 V DSS @T jmax. R DS(on) max. I D 710 V 0.029 Ω 84 A Worldwide best R DS(on) in TO-247 Higher V DSS rating Higher dv/dt capability Excellent switching performance Easy to drive 100% avalanche tested Applications High efficiency switching applications: Servers PV inverters Telecom infrastructure Multi kw battery chargers Description These devices are N-channel MDmesh V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics well-known PowerMESH horizontal layout structure. The resulting product has extremely low onresistance, which is unmatched among siliconbased Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency. Table 1. Device summary Order codes Marking Packages Packaging STW88N65M5 STWA88N65M5 88N65M5 TO-247 TO-247 long leads Tube July 2014 DocID022522 Rev 5 1/16 This is information on a product in full production. www.st.com 16
Contents STW88N65M5, STWA88N65M5 Contents 1 Electrical ratings............................................ 3 2 Electrical characteristics..................................... 4 2.1 Electrical characteristics (curves)............................ 6 3 Test circuits.............................................. 9 4 Package mechanical data.................................... 10 5 Revision history........................................... 15 2/16 DocID022522 Rev 5
STW88N65M5, STWA88N65M5 Electrical ratings 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit V GS Gate- source voltage ±25 V I D Drain current (continuous) at T C = 25 C 84 A I D Drain current (continuous) at T C = 100 C 50.5 A I (1) DM Drain current (pulsed) 336 A P TOT Total dissipation at T C = 25 C 450 W I AR Max current during repetitive or single pulse avalanche (pulse width limited by T JMAX ) 15 A E AS dv/dt (2) Single pulse avalanche energy (starting T j = 25 C, I D = I AR, V DD = 50 V) 1. Pulse width limited by safe operating area 2. I SD 84 A, di/dt = 400 A/µs, peak V DS < V (BR)DSS, V DD = 400 V 2000 mj Peak diode recovery voltage slope 15 V/ns T stg Storage temperature - 55 to 150 C T j Max. operating junction temperature 150 C Table 3. Thermal data Symbol Parameter Value Unit R thj-case Thermal resistance junction-case max 0.28 C/W R thj-amb Thermal resistance junction-ambient max 50 C/W DocID022522 Rev 5 3/16
Electrical characteristics STW88N65M5, STWA88N65M5 2 Electrical characteristics (T C = 25 C unless otherwise specified) Table 4. On /off states Symbol Parameter Test conditions Min. Typ. Max. Unit V (BR)DSS I DSS Drain-source breakdown voltage Zero gate voltage drain current V GS = 0, I D = 1 ma 650 V V GS = 0, V DS = 650 V 1 µa V GS = 0, V DS = 650 V, T C =125 C 100 µa I GSS Gate-body leakage current V DS = 0, V GS = ± 25 V ± 100 na V GS(th) Gate threshold voltage V DS = V GS, I D = 250 µa 3 4 5 V R DS(on) Static drain-source on- resistance V GS = 10 V, I D = 42 A 0.024 0.029 Ω Table 5. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit C iss Input capacitance - 8825 - pf C oss Output capacitance V GS = 0, V DS = 100 V, - 223 - pf C rss f = 1 MHz Reverse transfer capacitance - 11 - pf Equivalent C (1) o(tr) capacitance time V GS = 0, V DS = 0 to 520 V - 778 - pf related Equivalent C (2) o(er) capacitance energy V GS = 0, V DS = 0 to 520 V - 202 - pf related R G Intrinsic gate resistance f = 1 MHz open drain - 1.79 - Ω Q g Total gate charge V DD = 520 V, I D = 42 A, - 204 - nc Q gs Gate-source charge V GS = 10 V - 51 - nc Q gd Gate-drain charge (see Figure 16) - 84 - nc 1. C o(tr) is a constant capacitance value that gives the same charging time as C oss while V DS is rising from 0 to 80% V DSS. 2. C o(er) is a constant capacitance value that gives the same stored energy as C oss while V DS is rising from 0 to 80% V DSS. 4/16 DocID022522 Rev 5
STW88N65M5, STWA88N65M5 Electrical characteristics Table 6. Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit t d(v) Voltage delay time V DD = 400 V, I D = 56 A, - 141 - ns t r(v) Voltage rise time R G = 4.7 Ω, V GS = 10 V - 16 - ns t f(i) Current fall time (see Figure 17) - 29 - ns t c(off) Crossing time (see Figure 20) - 56 - ns Table 7. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit I SD Source-drain current - 84 A I (1) SDM Source-drain current (pulsed) - 336 A V (2) SD Forward on voltage I SD = 84 A, V GS = 0-1.5 V t rr Reverse recovery time I SD = 84 A, - 544 ns Q rr Reverse recovery charge di/dt = 100 A/µs - 14 µc I RRM Reverse recovery current V DD = 100 V (see Figure 17) - 50 A t rr Reverse recovery time I SD = 84 A, - 660 ns Q rr Reverse recovery charge di/dt = 100 A/µs V DD = 100 V, T j = 150 C - 20 µc I RRM Reverse recovery current (see Figure 17) - 60 A 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% DocID022522 Rev 5 5/16
Electrical characteristics STW88N65M5, STWA88N65M5 2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance ID (A) 100 10 1 Operation in this area is Limited by max RDS(on) AM10392v1 Tj=150 C Tc=25 C Single pulse 10µs 100µs 1ms 10ms 0.1 0.1 1 10 100 VDS(V) Figure 4. Output characteristics Figure 5. Transfer characteristics ID (A) VGS=9, 10V AM10393v1 ID (A) 250 VDS=30V AM10394v1 250 200 8V 225 200 175 150 100 7V 150 125 100 75 50 6V 50 25 0 0 5 10 15 20 25 VDS(V) Figure 6. Gate charge vs gate-source voltage 0 3 4 5 6 7 8 9 VGS(V) Figure 7. Static drain-source on resistance VGS (V) 14 12 10 VDS VDD=520V ID=42A AM10395v1 VDS (V) 500 400 RDS(on) (Ω) 0.026 VGS=10V AM10396v1 8 300 0.024 6 200 4 100 2 0 0 50 100 150 200 0 Qg(nC) 0.022 0.020 0 10 20 30 40 50 60 70 80 ID(A) 6/16 DocID022522 Rev 5
STW88N65M5, STWA88N65M5 Electrical characteristics Figure 8. Capacitance variations Figure 9. Output capacitance stored energy C (pf) 100000 AM10397v1 Eoss (µj) 40 35 AM10398v1 10000 Ciss 30 1000 100 Coss 25 20 15 10 1 0.1 1 10 100 VDS(V) Crss Figure 10. Normalized gate threshold voltage vs temperature 10 5 0 0 100 200 300 400 500 600 VDS(V) Figure 11. Normalized on-resistance vs temperature VGS(th) (norm) 1.10 1.00 ID=250µA AM04972v1 RDS(on) (norm) 2.1 1.9 1.7 ID= 42 A VGS= 10 V AM05501v2 1.5 0.90 1.3 1.1 0.80 0.9 0.70-50 -25 0 25 50 75 100 TJ( C) Figure 12. Source-drain diode forward characteristics VSD (V) 1.2 1.0 0.8 0.6 0.4 0.2 TJ=150 C TJ=-50 C TJ=25 C 0 0 10 20 30 40 50 ISD(A) AM04974v1 0.7 0.5-50 -25 0 25 50 75 100 125 TJ( C) Figure 13. Normalized V (BR)DSS vs temperature AM10399v1 V(BR)DSS (norm) 1.08 ID = 1mA 1.06 1.04 1.02 1.00 0.98 0.96 0.94 0.92-50 -25 0 25 50 75 100 TJ( C) DocID022522 Rev 5 7/16
Electrical characteristics STW88N65M5, STWA88N65M5 Figure 14. Switching losses vs gate resistance (1) E(μJ) 3000 VDD=400V VGS=10V TJ=25 C ID=56A Eon AM11171v1 2000 Eoff 1000 0 0 10 20 30 40 RG(Ω) 1. Eon including reverse recovery of a SiC diode 8/16 DocID022522 Rev 5
STW88N65M5, STWA88N65M5 Test circuits 3 Test circuits Figure 15. Switching times test circuit for resistive load Figure 16. Gate charge test circuit VDD VGS VD RG RL D.U.T. 2200 μf 3.3 μf VDD Vi=20V=VGMAX 2200 μf 12V IG=CONST 2.7kΩ 47kΩ 100Ω 100nF D.U.T. 1kΩ VG PW 47kΩ PW 1kΩ AM01468v1 AM01469v1 Figure 17. Test circuit for inductive load switching and diode recovery times Figure 18. Unclamped inductive load test circuit G 25 Ω D S A D.U.T. B A FAST DIODE B A B D L=100μH 3.3 1000 μf μf VDD VD ID L 2200 μf 3.3 μf VDD G RG S Vi D.U.T. AM01470v1 Pw AM01471v1 Figure 19. Unclamped inductive waveform Figure 20. Switching time waveform V(BR)DSS VD IDM ID VDD VDD AM01472v1 DocID022522 Rev 5 9/16
Package mechanical data STW88N65M5, STWA88N65M5 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 10/16 DocID022522 Rev 5
STW88N65M5, STWA88N65M5 Package mechanical data Figure 21. TO-247 drawing 0075325_G DocID022522 Rev 5 11/16
Package mechanical data STW88N65M5, STWA88N65M5 Table 8. TO-247 mechanical data Dim. mm. Min. Typ. Max. A 4.85 5.15 A1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 D 19.85 20.15 E 15.45 15.75 e 5.30 5.45 5.60 L 14.20 14.80 L1 3.70 4.30 L2 18.50 P 3.55 3.65 R 4.50 5.50 S 5.30 5.50 5.70 12/16 DocID022522 Rev 5
STW88N65M5, STWA88N65M5 Package mechanical data Figure 22. TO-247 long leads drawing 7395426_G DocID022522 Rev 5 13/16
Package mechanical data STW88N65M5, STWA88N65M5 Table 9. TO-247 long leads mechanical data Dim. mm Min. Typ. Max. A 4.90 5.15 D 1.85 2.10 E 0.55 0.67 F 1.07 1.32 F1 1.90 2.38 F2 2.87 3.38 G 10.90 BSC H 15.77 16.02 L 20.82 21.07 L1 4.16 4.47 L2 5.49 5.74 L3 20.05 20.30 L4 3.68 3.93 L5 6.04 6.29 M 2.25 2.55 V 10 V1 3 V3 20 Dia. 3.55 3.66 14/16 DocID022522 Rev 5
STW88N65M5, STWA88N65M5 Revision history 5 Revision history Table 10. Document revision history Date Revision Changes 23-Nov-2011 1 First release. 09-Dec-2011 2 Document status promoted from preliminary data to datasheet. 12-Jun-2012 3 Updated title on the cover page. 30-Nov-2012 4 16-Jul-2014 5 Added new part number: STWA88N65M5 Updated: Section 4: Package mechanical data Updated: Figure 4 and 5 Minor text changes DocID022522 Rev 5 15/16
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