B, A, B, C, B, C Amplifier Transistors NPN Silicon Features PbFree Packages are Available* COLLECTOR 1 MAXIMUM RATINGS Collector - Emitter oltage Collector - Base oltage Rating Symbol alue Unit CEO 65 45 CBO 8 5 dc dc Emitter - Base oltage EBO dc Collector Current Continuous I C madc Total Device Dissipation @ Derate above 25 C Total Device Dissipation @ T C = 25 C Derate above 25 C Operating and Storage Junction Temperature Range THERMAL CHARACTERISTICS P D 625 5. P D 1.5 12 mw mw/ C W mw/ C T J, T stg 55 to + C Characteristic Symbol Max Unit Thermal Resistance, JunctiontoAmbient R JA C/W Thermal Resistance, JunctiontoCase R JC 83.3 C/W Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. TO92 CASE 29 STYLE 17 2 BASE 3 EMITTER 1 1 2 2 3 3 STRAIGHT LEAD BENT LEAD TAPE & REEL MARKING DIAGRAM BC 54xy AYWW x = 6, 7, or 8 y = A, B or C A = Assembly Location Y = Year WW = Work Week = PbFree Package (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Semiconductor Components Industries, LLC, 12 June, 12 Rev. 7 1 Publication Order Number: /D
B, A, B, C, B, C ELECTRICAL CHARACTERISTICS ( unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector Emitter Breakdown oltage (BR)CEO (I C = ma, I B = ) 65 45 Collector Base Breakdown oltage (I C = Adc) Emitter Base Breakdown oltage (I E = A, I C = ) Collector Cutoff Current ( CE = 7, BE = ) ( CE = 5, BE = ) ( CE = 35, BE = ) ( CE =, T A = 125 C) /547/548 ON CHARACTERISTICS DC Current Gain (I C = A, CE = 5. ) A C (BR)CBO 8 5 (BR)EBO I CES h FE 9 27 15 15 15 4. na A (I C = ma, CE = 5. ) A C/C 1 1 1 1 4 18 29 5 45 8 8 2 45 8 (I C = ma, CE = 5. ) A/548A C Collector Emitter Saturation oltage (I C = ma, I B =.5 ma) (I C = ma, I B = 5. ma) (I C = ma, I B = See Note 1) Base Emitter Saturation oltage (I C = ma, I B =.5 ma) Base Emitter On oltage (I C = ma, CE = 5. ) (I C = ma, CE = 5. ) SMALLSIGNAL CHARACTERISTICS Current Gain Bandwidth Product (I C = ma, CE = 5., f = MHz) Output Capacitance ( CB =, I C =, f = MHz) Input Capacitance ( EB =.5, I C =, f = MHz) Small Signal Current Gain (I C = ma, CE = 5., f = khz) /548 A C/548C Noise Figure (I C = ma, CE = 5., R S = 2 k, f = khz, f = Hz) 1. I B is value for which I C = 11 ma at CE =. CE(sat) 1 18.9.3 5 BE(sat).7 BE(on).55 f T.7.77 MHz C obo 1.7 4.5 pf C ibo pf h fe 125 125 125 24 45 NF 2 3 6 5 9 26 5 9 db 2
B, A, B, C, B, C / h FE, NORMALIZED DC CURRENT GAIN 1.5.3 CE =, OLTAGE (OLTS).9.7.5.3.1 BE(sat) @ I C /I B = BE(on) @ CE = CE(sat) @ I C /I B =.5 5. 5 I C, COLLECTOR CURRENT (madc).1.3.5.7 3. 5. 7. 5 7 I C, COLLECTOR CURRENT (madc) Figure 1. Normalized DC Current Gain Figure 2. Saturation and On oltages CE, COLLECTOR-EMITTER OLTAGE () 1.6 1.2 I C = ma I C = ma I C = 5 ma.2.1 I B, BASE CURRENT (ma) I C = ma I C = ma, TEMPERATURE COEFFICIENT (m/ C) B θ 1.2 1.6 2.4 2.8-55 C to +125 C Figure 3. Collector Saturation Region Figure 4. BaseEmitter Temperature Coefficient C, CAPACITANCE (pf) 7. 5. C ib 3. C ob 4. 8. 4 R, REERSE OLTAGE (OLTS) Figure 5. Capacitances f, T CURRENT-GAIN - BANDWIDTH PRODUCT (MHz) 4 8 6 4.5.7 3. 5. 7. 5 I C, COLLECTOR CURRENT (madc) CE = Figure 6. CurrentGain Bandwidth Product 3
B, A, B, C, B, C h FE, DC CURRENT GAIN (NORMALIZED).5 CE = 5, OLTAGE (OLTS) BE(sat) @ I C /I B = BE @ CE = 5. CE(sat) @ I C /I B =.1.5 5. 5 Figure 7. DC Current Gain Figure 8. On oltage CE, COLLECTOR-EMITTER OLTAGE (OLTS) 1.6 1.2 ma I C = ma 5 ma ma.2.5.1.5 5. I B, BASE CURRENT (ma) Figure 9. Collector Saturation Region ma, TEMPERATURE COEFFICIENT (m/ C) B θ - -1.4-1.8-2.2-2.6 B for BE -55 C to 125 C -3..5 5. 5 Figure. BaseEmitter Temperature Coefficient C, CAPACITANCE (pf) 4 C ib 4. C ob.1.5 5. 5 R, REERSE OLTAGE (OLTS) f, T CURRENT-GAIN - BANDWIDTH PRODUCT 5 5 CE = 5 5. 5 Figure 11. Capacitance Figure 12. CurrentGain Bandwidth Product 4
B, A, B, C, B, C ORDERING INFORMATION Device Package Shipping B TO92 BG TO92 (PbFree) BRL1 TO92 / Tape & Reel BRL1G BZL1G TO92 (PbFree) TO92 (PbFree) / Tape & Reel ARL TO92 / Tape & Reel ARLG AZL1G BG BRL1G BZL1G CG CZL1G BG BRL1G BZL1G CG TO92 (PbFree) TO92 (PbFree) TO92 (PbFree) TO92 (PbFree) TO92 (PbFree) TO92 (PbFree) TO92 (PbFree) TO92 (PbFree) TO92 (PbFree) TO92 (PbFree) TO92 (PbFree) / Tape & Reel / Tape & Reel / Tape & Reel CZL1G TO92 (PbFree) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD811/D. 5
B, A, B, C, B, C PACKAGE DIMENSIONS TO92 (TO226) CASE 2911 ISSUE AM NOTES: A B STRAIGHT LEAD 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND P BEYOND DIMENSION K MINIMUM. L SEATING INCHES MILLIMETERS PLANE K DIM MIN MAX MIN MAX A.175 5 4.45 5. B.17 4.32 5.33 C.125.165 3.18 4.19 D.16.21 7.533 X X D G.45.55 1.15 1.39 H.95.5 2.42 2.66 G J.15..39.5 H J K.5 --- 12.7 --- C L 5 --- 6.35 --- N.8.5 4 2.66 P ---. --- 2.54 SECTION XX R.115 --- 2.93 --- 1 N.135 --- 3.43 --- N R T SEATING PLANE P G A X X 1 B K C N BENT LEAD TAPE & REEL D J SECTION XX NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. MILLIMETERS DIM MIN MAX A 4.45 5. B 4.32 5.33 C 3.18 4.19 D.54 G 2.4 2.8 J.39.5 K 12.7 --- N 4 2.66 P 1.5 4. R 2.93 --- 3.43 --- STYLE 17: PIN 1. COLLECTOR 2. BASE 3. EMITTER ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC s product/patent coverage may be accessed at www.onsemi.com/site/pdf/patentmarking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 8217 USA Phone: 36752175 or 8344386 Toll Free USA/Canada Fax: 36752176 or 83443867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 82829855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 79 29 Japan Customer Focus Center Phone: 81358175 6 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative /D