High Performance Schottky Rectifier, 1 A



Similar documents
High Performance Schottky Rectifier, 3.0 A

High Performance Schottky Rectifier, 1.0 A

Schottky Rectifier, 100 A

Schottky Rectifier, 1.0 A

Schottky Rectifier, 1.0 A

Schottky Rectifier, 1 A

10MQ100N SCHOTTKY RECTIFIER. I F(AV) = 2.1Amp V R = 100V. Bulletin PD rev. M 07/04. Major Ratings and Characteristics. Description/ Features

Standard Recovery Diodes, (Stud Version), 40 A

High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero

Small Signal Fast Switching Diode

Power MOSFET FEATURES. IRF520PbF SiHF520-E3 IRF520 SiHF520. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 100 V Gate-Source Voltage V GS ± 20

STPS20L15DPbF SCHOTTKY RECTIFIER. Case Styles. I F(AV) = 20Amp V R = 15V. Bulletin PD rev. A 02/07. Major Ratings and Characteristics

Small Signal Fast Switching Diode FEATURES PART ORDERING CODE INTERNAL CONSTRUCTION TYPE MARKING REMARKS

STPS40L15CW. 2 x 20 Amps SCHOTTKY RECTIFIER. Case Styles. I F(AV) = 40Amp V R = 15V. Bulletin PD rev. B 10/06. Description/ Features

High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs

Power MOSFET. IRF9520PbF SiHF9520-E3 IRF9520 SiHF9520. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS V Gate-Source Voltage V GS ± 20

Power MOSFET FEATURES. IRF740PbF SiHF740-E3 IRF740 SiHF740. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 400 V Gate-Source Voltage V GS ± 20

30BQ100PbF SCHOTTKY RECTIFIER. 3 Amp. I F(AV) = 3.0Amp V R = 100V. Bulletin PD rev. C 01/07. Major Ratings and Characteristics

Power MOSFET FEATURES. IRF540PbF SiHF540-E3 IRF540 SiHF540. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 100 V Gate-Source Voltage V GS ± 20

Dual Common-Cathode Ultrafast Plastic Rectifier

Pulse Proof Thick Film Chip Resistors

Power MOSFET FEATURES. IRF9640PbF SiHF9640-E3 IRF9640 SiHF9640

P6KE6.8A thru P6KE540A. TRANSZORB Transient Voltage Suppressors. Vishay General Semiconductor. FEATURES PRIMARY CHARACTERISTICS

High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs

Power MOSFET FEATURES. IRF610PbF SiHF610-E3 IRF610 SiHF610. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 200 V Gate-Source Voltage V GS ± 20

Insulated Precision Wirewound Resistors Axial Leads

High Speed Infrared Emitting Diode, 940 nm, GaAlAs, MQW

Power MOSFET. IRF510PbF SiHF510-E3 IRF510 SiHF510. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 100 V Gate-Source Voltage V GS ± 20

1.5KE6.8A thru 1.5KE540A, 1N6267A thru 1N6303A. TRANSZORB Transient Voltage Suppressors. Vishay General Semiconductor.

Power MOSFET FEATURES. IRF740PbF SiHF740-E3 IRF740 SiHF740. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 400 V Gate-Source Voltage V GS ± 20

Optocoupler, Phototransistor Output, with Base Connection

Power MOSFET FEATURES. IRL540PbF SiHL540-E3 IRL540 SiHL540

Power MOSFET FEATURES. IRFZ44PbF SiHFZ44-E3 IRFZ44 SiHFZ44 T C = 25 C

SK54B SCHOTTKY RECTIFIER

Power MOSFET FEATURES. IRFSL11N50APbF SiHFSL11N50A-E3. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 500 V Gate-Source Voltage V GS ± 30

High Power Infrared Emitting Diode, 940 nm, GaAlAs, MQW

Optocoupler, Phototransistor Output, with Base Connection, 300 V BV CEO

Surface Mount Schottky Barrier

700 MHz, -3 db Bandwidth; Dual SPDT Analog Switch

Thick Film Resistor Networks, Military, MIL-PRF Qualified, Type RZ010 and RZ020 Dual-In-Line, Molded DIP

High-Bandwidth, Low Voltage, Dual SPDT Analog Switches

1 Form A Solid State Relay

P-Channel 20 V (D-S) MOSFET

Optocoupler, Phototransistor Output, 4 Pin LSOP, Long Creepage Mini-Flat Package

Silicon PIN Photodiode

DG2515, DG Ω, 235-MHz Bandwidth, Dual SPDT Analog Switch. Vishay Siliconix. Not for New Design. RoHS COMPLIANT DESCRIPTION FEATURES BENEFITS

Reflective Optical Sensor with Transistor Output

P-Channel 20-V (D-S) MOSFET

Optocoupler, Phototransistor Output, AC Input

PDS5100H. Product Summary. Features and Benefits. Mechanical Data. Description and Applications. Ordering Information (Note 5) Marking Information

Silicon PIN Photodiode

SuperTan Extended (STE) Capacitors, Wet Tantalum Capacitors with Hermetic Seal

Dual P-Channel 2.5 V (G-S) MOSFET

Reflective Optical Sensor with Transistor Output

Silicon PIN Photodiode

Pulse Proof, High Power Thick Film Chip Resistors

STPS5L60. Power Schottky rectifier. Description. Features

19TQ015PbF. 19 Amp SCHOTTKY RECTIFIER. Case Styles. I F(AV) = 19Amp V R = 15V. Bulletin PD rev. B 04/06. Major Ratings and Characteristics

Optocoupler, Phototransistor Output, Dual Channel, SOIC-8 Package

Metal Film Resistors, Military, MIL-R Qualified, Precision, Type RN and MIL-PRF Qualified, Type RL

MUR1520 MURB1520 MURB1520-1

Optocoupler, Phototransistor Output, with Base Connection

P-Channel 1.25-W, 1.8-V (G-S) MOSFET

1 Form A Solid State Relay

Low Current SMD LED PLCC-2

50 W Power Resistor, Thick Film Technology, TO-220

Silicon NPN Phototransistor

Power Resistor Thick Film Technology

P-Channel 60 V (D-S) MOSFET

N-Channel 20-V (D-S) 175 C MOSFET

Surface Mount Multilayer Ceramic Chip Capacitor Solutions for High Voltage Applications

Metal Film Resistors, Pulse Withstanding Protective

Ambient Light Sensor

N-Channel 100 V (D-S) MOSFET

Aluminum Electrolytic Capacitors Power Economic Printed Wiring

Aluminum Electrolytic Capacitors Power Eurodin Printed Wiring

PMEG3015EH; PMEG3015EJ

PMEG2020EH; PMEG2020EJ

Surface Mount TRANSZORB Transient Voltage Suppressors

HEXFRED Ultrafast Soft Recovery Diode, 25 A

Aluminum Electrolytic Capacitors Axial Miniature, Long-Life

Optocoupler, Phototransistor Output, with Base Connection

Solid Tantalum Surface Mount Capacitors TANTAMOUNT, Molded Case, Low ESR

Automotive P-Channel 60 V (D-S) 175 C MOSFET

8ETH06 8ETH06S 8ETH06-1 8ETH06FP

Optocoupler, Photodarlington Output, Dual Channel, SOIC-8 Package

High-speed switching diodes. Type number Package Configuration Package NXP JEITA JEDEC

N-Channel 60-V (D-S), 175 C MOSFET

Medium power Schottky barrier single diode

Ultrabright White LED, Ø 3 mm

Knob Potentiometer with Switch

Aluminum Electrolytic Capacitors Radial Miniature, Low Impedance, High Vibration Capability

Photovoltaic MOSFET Driver with Integrated Fast Turn-Off, Solid-State Relay

Knob Potentiometer FEATURES. P16NP P16NM Panel Cutout. Thickness nut 2 mm washer 1.5 mm. Panel sealing ring 12 wrench Thread M10 x

Transcription:

High Performance Schottky Rectifier, A VS-MQNPbF Cathode Anode DO-24AC (SMA) PRODUCT SUMMARY Package DO-24AC (SMA) I F(AV) A V R V V F at I F.78 V I RM ma at 25 C T J max. 5 C Diode variation Single die E AS. mj FEATURES Small foot print, surface mountable Low forward voltage drop High frequency operation Guard ring for enhanced ruggedness and long term reliability Meets MSL level, per J-STD-2, LF maximum peak of 26 C Designed and qualified for industrial level Material categorization: for definitions of compliance please see www.vishay.com/doc?9992 DESCRIPTION The VS-MQNPbF surface mount Schottky rectifier has been designed for applications requiring low forward drop and very small foot prints on PC boards. Typical applications are in disk drives, switching power supplies, converters, freewheeling diodes, battery charging, and reverse battery protection. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS I F(AV) Rectangular waveform A V RRM V I FSM t p = 5 μs sine 2 A V F.5 A pk, T J = 25 C.68 V T J Range -55 to +5 C VOLTAGE RATINGS PARAMETER SYMBOL VS-MQNPbF UNITS Maximum DC reverse voltage V R Maximum working peak reverse voltage V RWM V ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum average forward current See fig. 4 I F(AV) 5 % duty cycle at T L = 26 C, rectangular waveform On PC board 9 mm 2 island (.3 mm thick copper pad area) 5 % duty cycle at T L = 35 C, rectangular waveform On PC board 9 mm 2 island (.3 mm thick copper pad area) Maximum peak one cycle 5 μs sine or 3 μs rect. pulse Following any rated load 2 non-repetitive surge current, I FSM condition and with rated A See fig. 6 ms sine or 6 ms rect. pulse V RRM applied 3 Non-repetitive avalanche energy E AS, I AS =.5 A, L = 8 mh. mj Current decaying linearly to zero in μs Repetitive avalanche current I AR.5 A Frequency limited by T J maximum V A =.5 x V R typical.5 A Revision: 6-Feb-5 Document Number: 949 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9

VS-MQNPbF ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS A.78 Maximum forward voltage drop.5 A.85 V () See fig. FM A.63 T J = 25 C.5 A.68 V Maximum reverse leakage current. I See fig. 2 RM V R = Rated V R T J = 25 C ma Threshold voltage V F(TO).52 V T J = T J maximum Forward slope resistance r t 78.4 m Typical junction capacitance C T V R = V DC,, test signal = MHz 38 pf Typical series inductance L S Measured lead to lead 5 mm from package body 2. nh Maximum voltage rate of change dv/dt Rated V R V/μs Note () Pulse width < 3 μs, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum junction and storage temperature range T () J, T Stg -55 to +5 C Maximum thermal resistance, junction to ambient R thja DC operation 8 C/W Approximate weight.7 g.2 oz. Marking device Case style SMA (similar D-64) J Note dp () tot ------------ < ------------- thermal runaway condition for a diode on its own heatsink dt J R thja Revision: 6-Feb-5 2 Document Number: 949 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9

VS-MQNPbF I F - Instantaneous Forward Current (A) T J = 5 C T J = 25 C..4.6.8..2.4.6 V FM - Forward Voltage Drop (V) Fig. - Maximum Forward Voltage Drop Characteristics Allowable Case Temperature ( C) 5 4 3 2 D =.2 D =.25 D =.33 D =.5 D =.75 Square wave (D =.5) 8 % rated V R applied DC See note () 9.4.8.2.6 2. 2.4 I F(AV) - Average Forward Current (A) Fig. 4 - Maximum Average Forward Current vs. Allowable Lead Temperature I R - Reverse Current (ma).... T J = 5 C T J = 25 C T J = C T J = 75 C T J = 5 C Average Power Loss (W).6.4.2..8.6.4.2 D =.2 D =.25 D =.33 D =.5 D =.75 DC RMS limit C T - Junction Capacitance (pf) 2 4 6 V R - Reverse Voltage (V) Fig. 2 - Typical Peak Reverse Current vs. Reverse Voltage Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage 8 2 4 6 8 V R - Reverse Voltage (V) I FSM - Non-Repetitive Surge Current (A).4.8.2.6 2. 2.4 I F(AV) - Average Forward Current (A) Fig. 5 - Maximum Average Forward Dissipation vs. Average Forward Current At any rated load condition and with rated V RRM applied following surge t p - Square Wave Pulse Duration (µs) Fig. 6 - Maximum Peak Surge Forward Current vs. Pulse Duration Note () Formula used: T C = T J - (Pd + Pd REV ) x R thjc ; Pd = Forward power loss = I F(AV) x V FM at (I F(AV) /D) (see fig. 6); Pd REV = Inverse power loss = V R x I R ( - D); I R at V R = 8 % rated V R Revision: 6-Feb-5 3 Document Number: 949 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9

VS-MQNPbF ORDERING INFORMATION TABLE Device code VS- M Q N TR PbF 2 3 4 5 6 7 8 - product 2 - Current rating ( = A) 3 - M = SMA 4 - Q = Schottky Q series 5 - Voltage rating ( = V) 6 - N = new SMA 7 - TR = tape and reel 8 - PbF = lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N PREFERRED PACKAGE CODE MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION VS-MQNTRPbF 5AT 75 3" diameter plastic tape and reel Dimensions Part marking information Packaging information SPICE model LINKS TO RELATED DOCUMENTS www.vishay.com/doc?954 www.vishay.com/doc?9543 www.vishay.com/doc?9544 www.vishay.com/doc?9537 Revision: 6-Feb-5 4 Document Number: 949 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9

Outline Dimensions SMA DIMENSIONS in inches (millimeters) DO-24AC (SMA) Cathode band Mounting Pad Layout.65 (.65).49 (.25). (2.79). (2.54).74 (.88) MAX..66 (.68) MIN..77 (4.5).57 (3.99).2 (.35).6 (.52).6 (.52) MIN..28 (5.28) REF..9 (2.29).78 (.98).6 (.52).3 (.76).8 (.23) ().28 (5.28).94 (4.93) Document Number: 954 For technical questions within your region, please contact one of the following: www.vishay.com Revision: 9-Jul- DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, Vishay ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer s technical experts. Product specifications do not expand or otherwise modify Vishay s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Material Category Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2/65/EU of The European Parliament and of the Council of June 8, 2 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive 22/95/EC. We confirm that all the products identified as being compliant to Directive 22/95/EC conform to Directive 2/65/EU. Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS79A standards. Please note that some Vishay documentation may still make reference to the IEC 6249-2-2 definition. We confirm that all the products identified as being compliant to IEC 6249-2-2 conform to JEDEC JS79A standards. Revision: 2-Oct-2 Document Number: 9