High Performance Schottky Rectifier, 2 x 10 A

Similar documents
High Performance Schottky Rectifier, 3.0 A

High Performance Schottky Rectifier, 1.0 A

Schottky Rectifier, 1.0 A

High Performance Schottky Rectifier, 1 A

Schottky Rectifier, 100 A

Schottky Rectifier, 1.0 A

Schottky Rectifier, 1 A

STPS40L15CW. 2 x 20 Amps SCHOTTKY RECTIFIER. Case Styles. I F(AV) = 40Amp V R = 15V. Bulletin PD rev. B 10/06. Description/ Features

STPS20L15DPbF SCHOTTKY RECTIFIER. Case Styles. I F(AV) = 20Amp V R = 15V. Bulletin PD rev. A 02/07. Major Ratings and Characteristics

HEXFRED Ultrafast Soft Recovery Diode, 25 A

Power MOSFET FEATURES. IRFSL11N50APbF SiHFSL11N50A-E3. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 500 V Gate-Source Voltage V GS ± 30

10MQ100N SCHOTTKY RECTIFIER. I F(AV) = 2.1Amp V R = 100V. Bulletin PD rev. M 07/04. Major Ratings and Characteristics. Description/ Features

Small Signal Fast Switching Diode

Standard Recovery Diodes, Generation 2 DO-5 (Stud Version), 95 A

Standard Recovery Diodes, (Stud Version), 40 A

30BQ100PbF SCHOTTKY RECTIFIER. 3 Amp. I F(AV) = 3.0Amp V R = 100V. Bulletin PD rev. C 01/07. Major Ratings and Characteristics

Small Signal Fast Switching Diode FEATURES PART ORDERING CODE INTERNAL CONSTRUCTION TYPE MARKING REMARKS

Characteristics Values Units. Rectangular waveform 0.5 A. range - 55 to 150 C

Power MOSFET FEATURES. IRF610PbF SiHF610-E3 IRF610 SiHF610. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 200 V Gate-Source Voltage V GS ± 20

19TQ015PbF. 19 Amp SCHOTTKY RECTIFIER. Case Styles. I F(AV) = 19Amp V R = 15V. Bulletin PD rev. B 04/06. Major Ratings and Characteristics

Power MOSFET. IRF510PbF SiHF510-E3 IRF510 SiHF510. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 100 V Gate-Source Voltage V GS ± 20

Ultrafast Soft Recovery Diode, 60 A FRED Pt

Power MOSFET FEATURES. IRFZ44PbF SiHFZ44-E3 IRFZ44 SiHFZ44 T C = 25 C

Power MOSFET FEATURES. IRF740PbF SiHF740-E3 IRF740 SiHF740. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 400 V Gate-Source Voltage V GS ± 20

Power MOSFET FEATURES. IRL540PbF SiHL540-E3 IRL540 SiHL540

MUR1520 MURB1520 MURB1520-1

P6KE6.8A thru P6KE540A. TRANSZORB Transient Voltage Suppressors. Vishay General Semiconductor. FEATURES PRIMARY CHARACTERISTICS

Power MOSFET FEATURES. IRF520PbF SiHF520-E3 IRF520 SiHF520. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 100 V Gate-Source Voltage V GS ± 20

Power MOSFET. IRF9520PbF SiHF9520-E3 IRF9520 SiHF9520. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS V Gate-Source Voltage V GS ± 20

Power MOSFET FEATURES. IRF540PbF SiHF540-E3 IRF540 SiHF540. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 100 V Gate-Source Voltage V GS ± 20

8ETH06 8ETH06S 8ETH06-1 8ETH06FP

Power MOSFET FEATURES. IRF9640PbF SiHF9640-E3 IRF9640 SiHF9640

Dual Common-Cathode Ultrafast Plastic Rectifier

HFA15TB60 HFA15TB60-1

Standard Recovery Diodes (Hockey PUK), 2100 A

High Speed Infrared Emitting Diode, 940 nm, GaAlAs, MQW

Power MOSFET FEATURES. IRF740PbF SiHF740-E3 IRF740 SiHF740. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 400 V Gate-Source Voltage V GS ± 20

1.5KE6.8A thru 1.5KE540A, 1N6267A thru 1N6303A. TRANSZORB Transient Voltage Suppressors. Vishay General Semiconductor.

Optocoupler, Phototransistor Output, with Base Connection, 300 V BV CEO

High Power Infrared Emitting Diode, 940 nm, GaAlAs, MQW

Features Benefits Description TO-247AC (Modified) Absolute Maximum Ratings Parameter Max Units

1 Form A Solid State Relay

Optocoupler, Phototransistor Output, 4 Pin LSOP, Long Creepage Mini-Flat Package

Power Resistor Thick Film Technology

Silicon PIN Photodiode

SK54B SCHOTTKY RECTIFIER

50 W Power Resistor, Thick Film Technology, TO-220

Optocoupler, Phototransistor Output, with Base Connection

Surface Mount Multilayer Ceramic Chip Capacitor Solutions for High Voltage Applications

High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero

SuperTan Extended (STE) Capacitors, Wet Tantalum Capacitors with Hermetic Seal

Optocoupler, Phototransistor Output, AC Input

High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs

Aluminum Electrolytic Capacitors Axial Miniature, Long-Life

Silicon PIN Photodiode

Optocoupler, Phototransistor Output, with Base Connection

STPS5L60. Power Schottky rectifier. Description. Features

1 Form A Solid State Relay

Aluminum Electrolytic Capacitors Power Economic Printed Wiring

High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs

SMD Aluminum Solid Capacitors with Conductive Polymer

PDS5100H. Product Summary. Features and Benefits. Mechanical Data. Description and Applications. Ordering Information (Note 5) Marking Information

Surface Mount Schottky Barrier

Aluminum Electrolytic Capacitors Power Eurodin Printed Wiring

AC Line Rated Ceramic Disc Capacitors Class X1, 760 V AC / Class Y1, 500 V AC

P-Channel 20 V (D-S) MOSFET

Reflective Optical Sensor with Transistor Output

P-Channel 20-V (D-S) MOSFET

Silicon PIN Photodiode

Silicon NPN Phototransistor

NTMS4920NR2G. Power MOSFET 30 V, 17 A, N Channel, SO 8 Features

Reflective Optical Sensor with Transistor Output

N-Channel 100 V (D-S) MOSFET

Aluminum Electrolytic Capacitors Radial Miniature, Low Impedance, High Vibration Capability

IR Receiver Module for Light Barrier Systems

Power Resistor for Mounting onto a Heatsink Thick Film Technology

Aluminum Capacitors Solid Axial

Optocoupler, Phototransistor Output, Dual Channel, SOIC-8 Package

Photovoltaic MOSFET Driver with Integrated Fast Turn-Off, Solid-State Relay

Surface Mount TRANSZORB Transient Voltage Suppressors

STTH3R02QRL. Ultrafast recovery diode. Main product characteristics. Features and benefits. Description. Order codes DO-15 STTH3R02Q DO-201AD STTH3R02

1N5820, 1N5821, 1N5822. Axial Lead Rectifiers SCHOTTKY BARRIER RECTIFIERS 3.0 AMPERES 20, 30, 40 VOLTS

High-speed switching diodes. Type number Package Configuration Package NXP JEITA JEDEC

Metal Film Resistors, Pulse Withstanding Protective

HFA08TB60. Ultrafast, Soft Recovery Diode HEXFRED TM TO-220AC. Bulletin PD rev. A 11/00

P-Channel 60 V (D-S) MOSFET

Automotive P-Channel 60 V (D-S) 175 C MOSFET

PMEG2020EH; PMEG2020EJ

PMEG3015EH; PMEG3015EJ

Knob Potentiometer with Switch

Solid Tantalum Surface Mount Capacitors TANTAMOUNT, Molded Case, Low ESR

N-Channel 20-V (D-S) 175 C MOSFET

P-Channel 1.25-W, 1.8-V (G-S) MOSFET

Knob Potentiometer FEATURES. P16NP P16NM Panel Cutout. Thickness nut 2 mm washer 1.5 mm. Panel sealing ring 12 wrench Thread M10 x

C Soldering Temperature, for 10 seconds 300 (1.6mm from case )

MBR2045CT SCHOTTKY BARRIER RECTIFIER 20 AMPERES 45 VOLTS

Medium power Schottky barrier single diode

2.5 A Output Current IGBT and MOSFET Driver

STTH110. High voltage ultrafast rectifier. Description. Features

Transcription:

VS-CTQ5SPbF, VS-CTQ5-PbF High Performance Schottky Rectifier, x TO-63 (D PK) ase common cathode Common 3 node cathode node VS-CTQ5SPbF PRODUCT SUMMRY TO-6 ase common cathode Common 3 node cathode node VS-CTQ5-PbF I F(V) x V R 5 V V F at I F.66 V I RM max. 5. m at 5 C T J max. 75 C E S. mj Package TO-63 (D PK), TO-6 Diode variation Common cathode FETURES 75 C T J operation Center tap configuration Low forward voltage drop High frequency operation High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Guard ring for enhanced ruggedness and long term reliability Meets MSL level, per J-STD-, LF maximum peak of 6 C EC-Q qualified Material categorization: for definitions of compliance please see www.vishay.com/doc?999 DESCRIPTION This center tap Schottky rectifier has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 75 C junction temperature. Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection. MJOR RTINGS ND CHRCTERISTICS SYMOL CHRCTERISTICS VLUES UNITS I F(V) Rectangular waveform V RRM 5 V I FSM t p = 5 μs sine 3 V F pk, T J = 5 C (per leg).66 V T J Range -55 to +75 C VOLTGE RTINGS PRMETER SYMOL VS-CTQ5SPbF VS-CTQ5-PbF UNITS Maximum DC reverse voltage V R 5 V Maximum working peak reverse voltage V RWM SOLUTE MXIMUM RTINGS PRMETER SYMOL TEST CONDITIONS VLUES UNITS Maximum average forward per leg current I F(V) 5 % duty cycle at T C = 54 C, rectangular waveform See fig. 5 per device Maximum peak one cycle 5 μs sine or 3 μs rect. pulse Following any rated 3 non-repetitive surge current per leg I FSM load condition and with See fig. 7 ms sine or 6 ms rect. pulse rated V RRM applied 8 Non-repetitive avalanche energy per leg E S T J = 5 C, I S =, L = mh. mj Current decaying linearly to zero in μs Repetitive avalanche current per leg I R Frequency limited by T J maximum V =.5 x V R typical Revision: 9-Jul-4 Document Number: 9449 For technical questions within your region: Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUJECT TO CHNGE WITHOUT NOTICE. THE PRODUCTS DESCRIED HEREIN ND THIS DOCUMENT RE SUJECT TO SPECIFIC DISCLIMERS, SET FORTH T www.vishay.com/doc?9

VS-CTQ5SPbF, VS-CTQ5-PbF ELECTRICL SPECIFICTIONS PRMETER SYMOL TEST CONDITIONS TYP. MX. UNITS Maximum forward voltage drop per leg See fig. Note () Pulse width < 3 μs, duty cycle < % V FM ().8.88 T J = 5 C.9..63.66 T J = 5 C.73.77 Maximum reverse leakage current per leg T J = 5 C 3. 5 μ I () RM V R = Rated V R See fig. T J = 5 C.7 5. m Typical junction capacitance per leg C T V R = 5 V DC (test signal range khz to MHz), 5 C - 8 pf Typical series inductance per leg L S Measured lead to lead 5 mm from package body - 8. nh Maximum voltage rate of change dv/dt Rated V R - V/μs V THERML - MECHNICL SPECIFICTIONS PRMETER SYMOL TEST CONDITIONS VLUES UNITS Maximum junction and storage temperature range T J, T Stg -55 to +75 C Maximum thermal resistance, per leg. R thjc DC operation junction to case per package. C/W Typical thermal resistance, Mounting surface, smooth and greased R thcs case to heatsink (Only for TO-6).5 pproximate weight Mounting torque Marking device g.7 oz. minimum 6 (5) kgf cm maximum () (lbf in) Case style D PK Case style TO-6 CTQ5S CTQ5- Revision: 9-Jul-4 Document Number: 9449 For technical questions within your region: Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUJECT TO CHNGE WITHOUT NOTICE. THE PRODUCTS DESCRIED HEREIN ND THIS DOCUMENT RE SUJECT TO SPECIFIC DISCLIMERS, SET FORTH T www.vishay.com/doc?9

VS-CTQ5SPbF, VS-CTQ5-PbF T J = 75 C I F - Instantaneous Forward Current () T J = 75 C T J = 5 C T J = 5 C I R - Reverse Current (m)... T J = 5 C T J = 5 C T J = C T J = 75 C T J = 5 C T J = 5 C..4.6.8...4.6.8. V FM - Forward Voltage Drop (V) Fig. - Maximum Forward Voltage Drop Characteristics (Per Leg). 4 6 8 4 6 V R - Reverse Voltage (V) Fig. - Typical Values of Reverse Current vs. Reverse Voltage (Per Leg) C T - Junction Capacitance (pf) T J = 5 C 4 8 6 V R - Reverse Voltage (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage (Per Leg) Z thjc - Thermal Impedance ( C/W). Single pulse (thermal resistance) D =.75 D =.5 D =.33 D =.5 D =....... t - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance Z thjc Characteristics (Per Leg) P DM Notes:. Duty factor D = t /t. Peak T J = P DM x Z thjc + T C t t Revision: 9-Jul-4 3 Document Number: 9449 For technical questions within your region: Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUJECT TO CHNGE WITHOUT NOTICE. THE PRODUCTS DESCRIED HEREIN ND THIS DOCUMENT RE SUJECT TO SPECIFIC DISCLIMERS, SET FORTH T www.vishay.com/doc?9

VS-CTQ5SPbF, VS-CTQ5-PbF llowable Lead Temperature ( C) 8 7 6 5 4 3 Square wave (D =.5) 8 % rated V R applied See note () DC 4 6 8 4 6 verage Power Loss (W) 9 8 7 6 5 4 3 D =. D =.5 D =.33 D =.5 D =.75 DC RMS limit 3 6 9 5 I F(V) - verage Forward Current () I F(V) - verage Forward Current () Fig. 5 - Maximum verage Forward Current vs. llowable Lead Temperature Fig. 6 - Maximum verage Forward Dissipation vs. verage Forward Current I FSM - Non-Repetitive Surge Current () t any rated load condition and with rated V RRM applied following surge t p - Square Wave Pulse Duration (µs) Fig. 7 - Maximum Peak Surge Forward Current vs. Pulse Duration L D.U.T. IRFP46 High-speed switch Current monitor R g = 5 Ω Freewheel diode 4HFL4S + V d = 5 V Fig. 8 - Unclamped Inductive Test Circuit Note () Formula used: T C = T J - (Pd + Pd REV ) x R thjc ; Pd = Forward power loss = I F(V) x V FM at (I F(V) /D) (see fig. 6); Pd REV = Inverse power loss = V R x I R ( - D); I R at V R = 8 % rated V R Revision: 9-Jul-4 4 Document Number: 9449 For technical questions within your region: Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUJECT TO CHNGE WITHOUT NOTICE. THE PRODUCTS DESCRIED HEREIN ND THIS DOCUMENT RE SUJECT TO SPECIFIC DISCLIMERS, SET FORTH T www.vishay.com/doc?9

VS-CTQ5SPbF, VS-CTQ5-PbF ORDERING INFORMTION TLE Device code VS- C T Q 5 S TRL PbF 3 4 5 6 7 8 9 - product - Current rating ( = ) 3 - C = common cathode 4 - T = TO- 5 - Schottky Q series 6 - Voltage rating (5 = 5 V) 7 - S = D PK - = TO-6 8 - None = tube TRL = tape and reel (left oriented - for D PK only) TRR = tape and reel (right oriented - for D PK only) 9 - PbF = lead (Pb)-free ORDERING INFORMTION (Example) PREFERRED P/N QUNTITY PER T/R MINIMUM ORDER QUNTITY PCKGING DESCRIPTION VS-CTQ5SPbF 5 ntistatic plastic tubes VS-CTQ5STRLPbF 8 8 3" diameter reel VS-CTQ5STRRPbF 8 8 3" diameter reel VS-CTQ5-PbF 5 ntistatic plastic tubes Dimensions Part marking information Packaging information LINKS TO RELTED DOCUMENTS www.vishay.com/doc?954 www.vishay.com/doc?958 www.vishay.com/doc?953 Revision: 9-Jul-4 5 Document Number: 9449 For technical questions within your region: Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUJECT TO CHNGE WITHOUT NOTICE. THE PRODUCTS DESCRIED HEREIN ND THIS DOCUMENT RE SUJECT TO SPECIFIC DISCLIMERS, SET FORTH T www.vishay.com/doc?9

Outline Dimensions Vishay High Power Products D PK, TO-6 DIMENSIONS FOR D PK in millimeters and inches Conforms to JEDEC outline D PK (SMD-) (3) L ()(3) E 4 c (E) (D) (3) Pad layout. MIN. (.43) 9.65 MIN. (.38) D L x e 3 H () x b x b C Detail. M M c ±.4 M E View - H (3) 7.9 (.7) 5. (.65).3 MIN. (.8) Plating.64 (.3).4 (.96) (4) b, b3 3.8 MIN. (.5) ase Metal Gauge plane Lead assignments Diodes. - node (two die)/open (one die)., 4. - Cathode 3. - node Lead tip to 8 L3 L L4 Detail Rotated 9 CW Scale: 8: Seating plane (c) (b, b) Section - and C - C Scale: None c (4) SYMOL MILLIMETERS INCHES MILLIMETERS INCHES NOTES SYMOL MIN. MX. MIN. MX. MIN. MX. MIN. MX. NOTES 4.6 4.83.6.9 D 6.86 8..7.35 3..54.. E 9.65.67.38.4, 3 b.5.99..39 E 7.9 8.8.3.346 3 b.5.89..35 4 e.54 SC. SC b.4.78.45.7 H 4.6 5.88.575.65 b3.4.73.45.68 4 L.78.79.7. c.38.74.5.9 L -.65 -.66 3 c.38.58.5.3 4 L.7.78.5.7 c.4.65.45.65 L3.5 SC. SC D 8.5 9.65.335.38 L4 4.78 5.8.88.8 Notes () Dimensioning and tolerancing per SME Y4.5 M-994 () Dimension D and E do not include mold flash. Mold flash shall not exceed.7 mm (.5") per side. These dimensions are measured at the outmost extremes of the plastic body (3) Thermal pad contour optional within dimension E, L, D and E (4) Dimension b and c apply to base metal only (5) Datum and to be determined at datum plane H (6) Controlling dimension: inch (7) Outline conforms to JEDEC outline TO-63 Document Number: 954 For technical questions concerning discrete products, contact: diodes-tech@vishay.com www.vishay.com Revision: 3-Mar-9 For technical questions concerning module products, contact: ind-modules@vishay.com

Outline Dimensions Vishay High Power Products D PK, TO-6 DIMENSIONS FOR TO-6 in millimeters and inches Modified JEDEC outline TO-6 (Datum ) () (3) E (3) L c E D Seating plane D(3) L C 3 C L () x e. M M Lead tip 3 x b 3 x b c Lead assignments Diodes. - node (two die)/open (one die)., 4. - Cathode 3. - node Plating c E Section - (4) ase b, b3 metal (b, b) (3) c (4) Section - and C - C Scale: None SYMOL MILLIMETERS INCHES MIN. MX. MIN. MX. NOTES 4.6 4.83.6.9.3 3..8.9 b.5.99..39 b.5.89..35 4 b.4.78.45.7 b3.4.73.45.68 4 c.38.74.5.9 c.38.58.5.3 4 c.4.65.45.65 D 8.5 9.65.335.38 D 6.86 8..7.35 3 E 9.65.67.38.4, 3 E 7.9 8.8.3.346 3 e.54 SC. SC L 3.46 4..53.555 L -.65 -.65 3 L 3.56 3.7.4.46 Notes () Dimensioning and tolerancing as per SME Y4.5M-994 () Dimension D and E do not include mold flash. Mold flash shall not exceed.7 mm (.5") per side. These dimensions are measured at the outmost extremes of the plastic body (3) Thermal pad contour optional within dimension E, L, D and E (4) Dimension b and c apply to base metal only (5) Controlling dimension: inches (6) Outline conform to JEDEC TO-6 except (maximum), b (minimum) and D (minimum) where dimensions derived the actual package outline www.vishay.com For technical questions concerning discrete products, contact: diodes-tech@vishay.com Document Number: 954 For technical questions concerning module products, contact: ind-modules@vishay.com Revision: 3-Mar-9

Legal Disclaimer Notice Vishay Disclaimer LL PRODUCT, PRODUCT SPECIFICTIONS ND DT RE SUJECT TO CHNGE WITHOUT NOTICE TO IMPROVE RELIILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, Vishay ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. ll operating parameters, including typical parameters, must be validated for each customer application by the customer s technical experts. Product specifications do not expand or otherwise modify Vishay s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Revision: 3-Jun-6 Document Number: 9