ESDAxxxWx. TRANSIL array for data protection. Main applications. Features. Description. Benefits SOT323-3L SOT323-5L SOT323-6L.

Similar documents
Table 1. Absolute maximum ratings (T amb = 25 C) Symbol Parameter Value Unit. ISO C = 330 pf, R = 330 Ω : Contact discharge Air discharge

ESDLIN1524BJ. Transil, transient voltage surge suppressor diode for ESD protection. Features. Description SOD323

DDSL01. Secondary protection for DSL lines. Features. Description

DSL01-xxxSC5. Secondary protection for DSL lines. Features. Description. Applications. Benefits. Complies with the following standards

P6KE. Transil, transient voltage surge suppressor (TVS) Features. Description. Complies with the following standards

BZW50. Transil, transient voltage surge suppressor (TVS) Features. Description

ETP01-xx21. Protection for Ethernet lines. Features. Description. Applications. Benefits. Complies with the following standards

HCF4001B QUAD 2-INPUT NOR GATE

STP62NS04Z N-CHANNEL CLAMPED 12.5mΩ - 62A TO-220 FULLY PROTECTED MESH OVERLAY MOSFET

AN1826 APPLICATION NOTE TRANSIENT PROTECTION SOLUTIONS: Transil diode versus Varistor

HCF4010B HEX BUFFER/CONVERTER (NON INVERTING)

USBP01-5M8. ESD protection for enhanced micro USB interface. Features. Applications. Description. Complies with following standards

STTH2R06. High efficiency ultrafast diode. Features. Description

AN820 APPLICATION NOTE INPUT/OUTPUT PROTECTION FOR AUTOMOTIVE COMPUTER

DVIULC6-4SC6. Ultra low capacitance ESD protection. Main applications. Complies with these standards: Description. Benefits. Features.

STTH1R04-Y. Automotive ultrafast recovery diode. Features. Description

TDA2822 DUAL POWER AMPLIFIER SUPPLY VOLTAGE DOWN TO 3 V LOW CROSSOVER DISTORSION LOW QUIESCENT CURRENT BRIDGE OR STEREO CONFIGURATION

DSL03. Low capacitance TVS for high speed lines such as xdsl. Description. Features. Complies with the following standards

HCF4070B QUAD EXCLUSIVE OR GATE

HCF4056B BCD TO 7 SEGMENT DECODER /DRIVER WITH STROBED LATCH FUNCTION

HCF4081B QUAD 2 INPUT AND GATE

STIEC45-xxAS, STIEC45-xxACS

STGW40NC60V N-CHANNEL 50A - 600V - TO-247 Very Fast PowerMESH IGBT

STW34NB20 N-CHANNEL 200V Ω - 34A TO-247 PowerMESH MOSFET

Description. Table 1. Device summary. Order code Temperature range Package Packaging Marking

LM833 LOW NOISE DUAL OPERATIONAL AMPLIFIER

STP80NF55-08 STB80NF55-08 STB80NF N-CHANNEL 55V Ω - 80A D2PAK/I2PAK/TO-220 STripFET II POWER MOSFET

ULN2801A, ULN2802A, ULN2803A, ULN2804A

ADJUSTABLE VOLTAGE AND CURRENT REGULATOR

BD238. Low voltage PNP power transistor. Features. Applications. Description. Low saturation voltage PNP transistor

LM134-LM234-LM334. Three terminal adjustable current sources. Features. Description

STN3NF06L. N-channel 60 V, 0.07 Ω, 4 A, SOT-223 STripFET II Power MOSFET. Features. Application. Description

HCF4028B BCD TO DECIMAL DECODER

BD241A BD241C. NPN power transistors. Features. Applications. Description. NPN transistors. Audio, general purpose switching and amplifier transistors

BTA40, BTA41 and BTB41 Series

STTH3R02QRL. Ultrafast recovery diode. Main product characteristics. Features and benefits. Description. Order codes DO-15 STTH3R02Q DO-201AD STTH3R02

FLC21-135A LOW POWER FIRE LIGHTER CIRCUIT. Application Specific Discretes A.S.D.

Symbol Parameter Value Unit V DS Drain-source Voltage (V GS =0) 50 V V DGR Drain- gate Voltage (R GS =20kΩ) 50 V

STW20NM50 N-CHANNEL Tjmax Ω - 20ATO-247 MDmesh MOSFET

2STBN15D100. Low voltage NPN power Darlington transistor. Features. Application. Description

SM6T. Transil. Features. Description. Complies with the following standards. Peak pulse power: 600 W (10/1000 µs).

UA741. General-purpose single operational amplifier. Features. Applications. Description. N DIP8 (plastic package)

AN2703 Application note

CAN bus ESD protection diode

BTB04-600SL STANDARD 4A TRIAC MAIN FEATURES

TPI. Tripolar protection for ISDN interfaces. Features. Description. Complies with following standards. Benefits

Obsolete Product(s) - Obsolete Product(s)

STB4NK60Z, STB4NK60Z-1, STD4NK60Z STD4NK60Z-1, STP4NK60Z,STP4NK60ZFP

BD135 - BD136 BD139 - BD140

LM337. Three-terminal adjustable negative voltage regulators. Features. Description

MC Low noise quad operational amplifier. Features. Description

STP10NK60Z/FP, STB10NK60Z/-1 STW10NK60Z N-CHANNEL 600V-0.65Ω-10A TO-220/FP/D 2 PAK/I 2 PAK/TO-247 Zener-Protected SuperMESH Power MOSFET

STP60NF06. N-channel 60V Ω - 60A TO-220 STripFET II Power MOSFET. General features. Description. Internal schematic diagram.

Description. Table 1. Device summary. Order codes. TO-220 (single gauge) TO-220 (double gauge) D²PAK (tape and reel) TO-220FP

STP6NK60Z - STP6NK60ZFP STB6NK60Z - STB6NK60Z-1 N-CHANNEL 600V - 1Ω - 6A TO-220/TO-220FP/D 2 PAK/I 2 PAK Zener-Protected SuperMESH Power MOSFET

STP60NF06FP. N-channel 60V Ω - 30A TO-220FP STripFET II Power MOSFET. General features. Description. Internal schematic diagram.

ULN2001, ULN2002 ULN2003, ULN2004

TDA4605 CONTROL CIRCUIT FOR SWITCH MODE POWER SUPPLIES USING MOS TRANSISTORS

How To Make An Electric Static Discharge (Esd) Protection Diode

L6234. Three phase motor driver. Features. Description

STP10NK80ZFP STP10NK80Z - STW10NK80Z

Symbol Parameter Value Unit V i-o Input-output Differential Voltage 40 V I O Output Current Intenrally Limited Top

STP55NF06L STB55NF06L - STB55NF06L-1

IRFP450. N - CHANNEL 500V Ω - 14A - TO-247 PowerMESH MOSFET

Symbol Parameter Value Unit IAR Avalanche Current, Repetitive or Not-Repetitive

TL084 TL084A - TL084B

ST High voltage fast-switching NPN power transistor. Features. Applications. Description

PESDxU1UT series. 1. Product profile. Ultra low capacitance ESD protection diode in SOT23 package. 1.1 General description. 1.

BUX48/48A BUV48A/V48AFI

IRF740 N-CHANNEL 400V Ω - 10A TO-220 PowerMESH II MOSFET

TL074 TL074A - TL074B

BTW67 and BTW69 Series

STGB10NB37LZ STGP10NB37LZ

LM135-LM235-LM335. Precision temperature sensors. Features. Description

STTH110. High voltage ultrafast rectifier. Description. Features

IRF830. N - CHANNEL 500V Ω - 4.5A - TO-220 PowerMESH MOSFET

L78MxxAB L78MxxAC. Precision 500 ma regulators. Features. Description

LF00AB/C SERIES VERY LOW DROP VOLTAGE REGULATORS WITH INHIBIT

BYT60P-1000 BYT261PIV-1000

Description. Table 1. Device summary

VNP5N07 "OMNIFET": FULLY AUTOPROTECTED POWER MOSFET

TDA CHANNEL VOLUME CONTROLLER 1 FEATURES 2 DESCRIPTION. Figure 1. Package

L4940 series VERY LOW DROP 1.5 A REGULATORS

.OPERATING SUPPLY VOLTAGE UP TO 46 V

STB75NF75 STP75NF75 - STP75NF75FP

SWITCH-MODE POWER SUPPLY CONTROLLER PULSE OUTPUT DC OUTPUT GROUND EXTERNAL FUNCTION SIMULATION ZERO CROSSING INPUT CONTROL EXTERNAL FUNCTION

EN: This Datasheet is presented by the m anufacturer. Please v isit our website for pricing and availability at ore.hu.

L297 STEPPER MOTOR CONTROLLERS

STCS A max constant current LED driver. Features. Applications. Description

EMIF06-mSD02C3. Mini and micro-sd card IPAD EMI filtering and ESD protection. Features. Description. Application

STCS1A. 1.5 A max constant current LED driver. Features. Applications. Description

L78M00 SERIES POSITIVE VOLTAGE REGULATORS.

VN03. ISO high side smart power solid state relay PENTAWATT. Features. Description.

STP6N60FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

AN3353 Application note

Order code Temperature range Package Packaging

LM134-LM234 LM334 THREE TERMINAL ADJUSTABLE CURRENT SOURCES. OPERATES from 1V to 40V

NE555 SA555 - SE555. General-purpose single bipolar timers. Features. Description

Description SO-8. series. Furthermore, in the 8-pin configuration Very low-dropout voltage (0.2 V typ.)

VN5R003H-E. 3 mω reverse battery protection switch. Features. Description. Application

Transcription:

TRANSIL array for data protection Main applications Where transient overvoltage protection in ESD sensitive equipment is required, such as : Computers Printers Communication systems Cellular phones handsets and accessories Wireline and wireless telephone sets Set top boxes Features 2 up to 5 Unidirectional Transil functions Breakdown voltage: V BR = 6.1 V min. and 25 V min. Low leakage current: < 1 µa Very small PCB area < 4.2 mm 2 typically Description The ESDAxxxWx are monolithic suppressors designed to protect components connected to data and transmission lines against ESD. These devices clamp the voltage just above the logic level supply for positive transients, and to a diode drop below ground for negative transients. Benefits High ESD protection level: up to 25 kv High integration Complies with the following standards SOT323-3L SOT323-5L SOT323-6L Order codes Part Numbers ESDA25W ESDA25W5 ESDA25W Functional diagram 1 2 Marking E61 E62 E25 E25 /ESDA25W5 Functional diagram Functional diagram 3 1 5 2 3 4 IEC61000-4-2 Level 4 15 kv (air discharge) 8 kv(contact discharge) MIL STD 883E - Method 3015-7 Class 3 25 kv HBM (Human Body Model) 1 2 3 6 5 4 Rev 2 August 2005 1/11 www.st.com 11

1 Characteristics ESDAxxxWx 1 Characteristics Table 1. Absolute Ratings (T amb = 25 C) Symbol Parameter Value Unit ESDA25W 400 P PP Peak pulse power (8/20 µs) ESDA25W5 / 150 W 100 T j Junction temperature 125 C T stg Storage temperature range -55 to +150 C T L Maximum lead temperature for soldering during 10s 260 C T op Operating temperature range (1) ESDA25W / ESDA25W5 / -40 to +125-40 to +125 C 1. The values of the operating parameters versus temperature are given through curves and αt parameter. 1.1 Electrical Characteristics (T amb = 25 C) Symbol Parameter V RM Stand-off voltage I V BR Breakdown voltage I F V CL Clamping voltage I RM I PP I R Leakage current Peak pulse current Reverse leakage current V CLV BR V RM I RM V F V I F Forward current αt Voltage temperature coefficient V F C Forward voltage drop Capacitance Slope: 1/R d I PP R d Dynamic resistance 2/11

1 Characteristics V BR I RM @ V RM V F @ I F R d αt C Part Numbers min. max. @ I R max. typ. (1) max. (2) typ. 0V bias V V ma µa V V ma Ω 10-4 / C pf ESDA25W 25 30 1 1 24 1.2 10 1.1 10 65 ESDA25W5 25 30 1 1 24 1.2 10 1.9 10 30 6.1 7.2 1 1 3 1.25 200 0.61 6 50 6.1 7.2 1 1 3 1.25 200 0.35 6 90 1. Square pulse l pp = 15 A, t p = 2.5 µs 2. V BR = at* (T amb - 25 C) * V BR (25 C) Figure 1. Peak power dissipation versus initial junction temperature Figure 2. Peak pulse power versus exponential pulse duration (T j initial = 25 C) (ESDA25W) 1.1 P PP[Tj initial] / P PP [Tjinitial=25 C] 10000 P PP(W) 1.0 Tj initial = 25 C 0.9 0.8 0.7 0.6 ESDA25W 0.5 1000 0.4 0.3 0.2 0.1 0.0 T initial ( C) j 0 25 50 75 100 125 Fig 1 t (µs) p 100 1 10 100 3/11

1 Characteristics ESDAxxxWx Figure 3. Peak pulse power versus exponential pulse duration (T j initial = 25 C) (ESDA25W5 / / ) Figure 4. Clamping voltage versus peak pulse current (T j initial = 25 C, rectangular waveform, t p = 2.5 µs) (ESDA25W / ESDA25W5) 1000 P PP(W) 100.0 I PP(A) / ESDA25W5 Tj initial = 25 C t p = 2.5µs ESDA25W 10.0 100 ESDA25W5 1.0 10 t (µs) p 1 10 100 V CL 0.1 20 25 30 35 40 45 50 55 60 65 70 75 80 (V) Figure 5. Clamping voltage versus peak pulse current (T j initial = 25 C, rectangular waveform, t p = 2.5 µs) ( / ) Figure 6. Capacitance versus reverse applied voltage (typical values) (ESDA25W / ESDA25W5) 50.0 10.0 I PP(A) t p = 2.5µs 50 45 40 35 C(pF) ESDA25W F=1MHz V OSC=30mVRMS T j=25 C 30 25 1.0 20 15 V CL 0.1 0 5 10 15 20 25 30 35 40 (V) 10 5 0 ESDA25W5 V (V) R 1 3 5 7 9 11 13 15 17 19 21 23 25 4/11

1 Characteristics Figure 7. Capacitance versus reverse applied voltage (typical values) ( / ) Figure 8. Relative variation of leakage current versus junction temperature (typical values) 80 70 C(pF) F=1MHz V OSC=30mVRMS T j=25 C 1000 I [T ] / I [T =25 C] R j R j 60 100 50 40 30 20 V (V) R 10 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 10 ESDA25W5 ESDA25W T ( C) j 1 25 50 75 100 125 Figure 9. 1E+0 I FM(A) T j = 25 C Peak forward voltage drop versus peak forward current (typical values) (ESDA25W / ESDA25W5) ESDA25W / ESDA25W5 Figure 10. Peak forward voltage drop versus peak forward current (typical values) ( / ) 1E+0 I FM(A) T j = 25 C 1E-1 1E-1 1E-2 1E-2 V FM(V) 1E-3 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V FM(V) 1E-3 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 Figure 11. ESD response to IEC61000-4-2 (air discharge 15 kv, positive surge) 5/11

2 Ordering information scheme ESDAxxxWx 2 Ordering information scheme ESDA 25-5 Wx ESD Array Breakdown Voltage 25 = 25 Volts min. 6V1 = 6.1 Volts min Number of lines protected (optional) -5 = 5 lines Packages W = SOT323-3L W5 = SOT323-5L W6 = SOT323-6L 6/11

3 Package mechanical data 3 Package mechanical data 3.1 SOT323-3L package DIMENSIONS E A REF. Millimeters Inches Min. Typ. Max. Min. Typ. Max. b e D A 0.8 1.1 0.031 0.043 A1 0.0 0.1 0.0 0.004 b 0.25 0.4 0.010 0.016 A1 c 0.1 0.26 0.004 0.010 D 1.8 2.0 2.2 0.071 0.079 0.086 E 1.15 1.25 1.35 0.045 0.049 0.053 e 0.65 0.026 c θ H L H 1.8 2.1 2.4 0.071 0.083 0.094 L 0.1 0.2 0.3 0.004 0.008 0.012 q 0 30 0 30 Figure 12. Footprint dimensions 0.95 1.0 2.9 0.8 0.50 Dimensions in mm 7/11

3 Package mechanical data ESDAxxxWx 3.2 SOT323-5L package E A REF. DIMENSIONS Millimeters Inches Min. Max. Min. Max. b e e D A 0.8 1.1 0.031 0.043 A1 0 0.1 0 0.004 A2 0.8 1 0.031 0.039 b 0.15 0.3 0.006 0.012 Q1 A1 A2 c 0.1 0.18 0.004 0.007 D 1.8 2.2 0.071 0.086 E 1.15 1.35 0.045 0.053 c HE L e 0.65 Typ. 0.025 Typ. H 1.8 2.4 0.071 0.094 Q1 0.1 0.4 0.004 0.016 Figure 13. Footprint dimensions 0.3 1.0 2.9 1.0 0.35 Dimensions in mm 8/11

3 Package mechanical data 3.3 SOT323-6L package E A REF. DIMENSIONS Millimeters Inches Min. Max. Min. Max. b e e D A 0.8 1.1 0.031 0.043 A1 0 0.1 0 0.004 A2 0.8 1 0.031 0.039 b 0.15 0.3 0.006 0.012 Q1 A1 A2 c 0.1 0.18 0.004 0.007 D 1.8 2.2 0.071 0.086 E 1.15 1.35 0.045 0.053 c HE L e 0.65 Typ. 0.025 Typ. H 1.8 2.4 0.071 0.094 Q 0.1 0.4 0.004 0.016 Figure 14. Footprint dimensions 0.65 1.05 0.80 2.9 1.05 0.40 Dimensions in mm 9/11

4 Ordering information ESDAxxxWx 4 Ordering information Part Number Marking Package Weight Base qty Delivery mode E61 SOT323-5L E62 SOT323-6L ESDA25W E25 SOT323-3L ESDA25W5 E25 SOT323-5L 6 mg 3000 Tape & reel 5 Revision history Date Revision Changes 20-Jul-2005 1 Initial release 29-Aug-2005 2 Added notes to table on page2, removed annotations in Figure 1. 10/11

5 Revision history Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners 2005 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 11/11