N-Channel Enhancement Mode Low Q g and R g High dv/dt Nanosecond Switching Ideal for Class C, D, & E Applications Symbol Test Conditions Maximum Ratings V DSS T J = 25 C to 5 C 2 V V DGR T J = 25 C to 5 C; R GS = MΩ 2 V V GS Continuous ±2 V V GSM Transient ±3 V I D25 T c = 25 C 25 A I DM T c = 25 C, pulse width limited by T JM 5 A I AR T c = 25 C 25 A E AR T c = 25 C 2 mj dv/dt I S I DM, di/dt A/µs, V DD V DSS, T j 5 C, R G =.2Ω 5 V/ns GATE V DSS = 2 V I D25 = 25 A R DS(on) =.3 Ω P DC = 59 W DRAIN I S = >2 V/ns P DC 59 W P DHS T c = 25 C Derate.9W/ C above 25 C Symbol Test Conditions Characteristic Values T J = 25 C unless otherwise specified min. typ. max. V DSS V GS = V, I D = 3 ma 2 V V GS(th) V DS = V GS, I D = 25µA 2.5 3. 5.5 V I GSS V GS = ±2 V DC, V DS = ± na I DSS V DS =.8 V DSS T J = 25 C V GS = T J = 25 C R DS(on) V GS = 5 V, I D =.5I D25 Pulse test, t 3µS, duty cycle d 2% 284 W P DAMB T c = 25 C 3. W R thjc.25 C/W R thjhs.53 C/W 5 µa ma.3 Ω g fs V DS = 5 V, I D =.5I D25, pulse test 3 6 8 S SG Features SG2 Isolated Substrate high isolation voltage (>25V) excellent thermal transfer Increased temperature and power cycling capability IXYS advanced low Q g process Low gate charge and capacitances easier to drive faster switching Low R DS(on) Very low insertion inductance (<2nH) No beryllium oxide (BeO) or other hazardous materials Advantages SD SD2 Optimized for RF and high speed switching at frequencies to MHz Easy to mount no insulators needed High power density T J -55 +75 C T JM 75 C T stg -55 +75 C T L.6mm(.63 in) from case for s 3 C Weight 2 g
Symbol Test Conditions Characteristic Values (T J = 25 C unless otherwise specified) min. typ. max. R G.3 Ω C iss 25 pf C oss V GS = V, V DS =.8 V DSS(max), f = MHz 265 pf C rss 42 pf C stray Back Metal to any Pin 2 pf T d(on) 5 ns T on V GS = 5 V, V DS =.8 V DSS 5 ns I D =.5 I DM T d(off) R G =.2 Ω (External) 8 ns T off 8 ns Q g 8 nc Q gs V GS = V, V DS =.5 V DSS I D =.5 I D25 4 nc Q gd 42 nc -Drain Diode Characteristic Values (T J = 25 C unless otherwise specified) Symbol Test Conditions min. typ. max. I S V GS = V 25 A I SM Repetitive; pulse width limited by T JM 5 A V SD I F = I S, V GS = V, Pulse test, t 3 µs, duty cycle 2% 2. V T rr 3 ns CAUTION: Operation at or above the Maximum Ratings values may impact device reliability or cause permanent damage to the device. Information in this document is believed to be accurate and reliable. IXYSRF reserves the right to make changes to information published in this document at any time and without notice. For detailed device mounting and installation instructions, see the Device Installation & Mounting Instructions technical note on the IXYSRF web site at; http://www.ixysrf.com/pdf/switch_mode/appnotes/7de_series_mosfet_installation_instructions.pdf IXYS RF reserves the right to change limits, test conditions and dimensions. IXYS RF MOSFETS are covered by one or more of the following U.S. patents: 4,835,592 4,86,72 4,88,6 4,89,686 4,93,844 5,7,58 5,34,796 5,49,96 5,63,37 5,87,7 5,237,48 5,486,75 5,38,25 5,64,45
Fig. Fig. 2 Typical Transfer Characteristics V DS = 6V, PW = 4uS Typical Output Characteristics I D, Drain Current (A) 4 2 8 6 4 2 I D, Drain Currnet (A) 2 8 6 4 2 Top 9-V 8V 7.5V 7V 6.5V 6V 5.5V Bottom 5V 5 6 7 8 9 V GS, Gate-to Voltage (V) 2 3 4 5 6 V DS, Drain-to- Voltage (V) Fig. 3 Fig. 4 Gate Charge vs. Gate-to- Voltage V DS = V, I D = 2.5A VD S vs.capacitance Gate-to- Voltage (V) 6 4 2 8 6 4 2 5 5 Gate Charge (nc) Capacitance (pf) Ciss Coss Crss 2 4 6 8 2 4 6 VDS Voltage (V)
Fig. 5 Package Drawing Gate Drain
2N25A DE-SERIES SPICE Model The DE-SERIES SPICE Model is illustrated in Figure. The model is an expansion of the SPICE level 3 MOSFET model. It includes the stray inductive terms L G, L S and L D. Rd is the R DS(ON) of the device, Rds is the resistive leakage term. The output capacitance, C OSS, and reverse transfer capacitance, C RSS are modeled with reversed biased diodes. This provides a varactor type response necessary for a high power device model. The turn on delay and the turn off delay are adjusted via Ron and Roff. DRAIN Ld 4 2 GATE Lg Doff Roff Dcrs 5 6 D2crs 8 Rd Ron 2 3 M3 Dcos Rds Don 7 Ls Figure 6 DE-SERIES SPICE Model This SPICE model may be downloaded as a text file from the DEI web site at http://www.ixysrf.com/products/switch_mode.html http://www.ixysrf.com/spice/de275-2n25a.html 3 SOURCE Net List: ********** *SYM=POWMOSN.SUBCKT 2N25A 2 3 * TERMINALS: D G S * 2 Volt 25 Amp.3 ohm N-Channel Power MOSFET M 2 3 3 DMOS L=U W=U RON 5 6.5 DON 6 2 D ROF 5 7.2 DOF 2 7 D DCRS 2 8 D2 D2CRS 8 D2 CGS 2 3 2.5N RD 4.3 DCOS 3 D3 RDS 3 5.MEG LS 3 3.N LD 4 N LG 2 5 N.MODEL DMOS NMOS (LEVEL=3 VTO=3. KP=25.).MODEL D D (IS=.5F CJO=P BV= M=.5 VJ=.6 TT=N).MODEL D2 D (IS=.5F CJO=P BV=2 M=.5 VJ=.6 TT=N RS=M).MODEL D3 D (IS=.5F CJO=3P BV=2 M=.3 VJ=.4 TT=4N RS=M).ENDS Doc #92-26 Rev 4 29 IXYS RF An IXYS Company 24 Research Blvd., Suite 8 Fort Collins, CO USA 8526 97-493-9 Fax: 97-493-93 Email: sales@ixyscolorado.com Web: http://www.ixyscolorado.com