Slew Rate Controlled Load Switch

Similar documents
AAT4280 Slew Rate Controlled Load Switch

28 V, 56 m, Load Switch with Programmable Current Limit and Slew Rate Control

5 V, 1 A H-Bridge Motor Driver

P-Channel 20 V (D-S) MOSFET

P-Channel 20-V (D-S) MOSFET

N-Channel 100 V (D-S) MOSFET

P-Channel 60 V (D-S) MOSFET

Load Switch with Level-Shift

Power MOSFET FEATURES. IRFZ44PbF SiHFZ44-E3 IRFZ44 SiHFZ44 T C = 25 C

Power MOSFET. IRF510PbF SiHF510-E3 IRF510 SiHF510. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 100 V Gate-Source Voltage V GS ± 20

Power MOSFET FEATURES. IRL540PbF SiHL540-E3 IRL540 SiHL540

Power MOSFET FEATURES. IRF610PbF SiHF610-E3 IRF610 SiHF610. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 200 V Gate-Source Voltage V GS ± 20

P-Channel 1.25-W, 1.8-V (G-S) MOSFET

Power MOSFET FEATURES. IRF740PbF SiHF740-E3 IRF740 SiHF740. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 400 V Gate-Source Voltage V GS ± 20

Power MOSFET FEATURES. IRF520PbF SiHF520-E3 IRF520 SiHF520. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 100 V Gate-Source Voltage V GS ± 20

700 MHz, -3 db Bandwidth; Dual SPDT Analog Switch

High-Bandwidth, Low Voltage, Dual SPDT Analog Switches

Automotive P-Channel 60 V (D-S) 175 C MOSFET

DG2302. High-Speed, Low r ON, SPST Analog Switch. Vishay Siliconix. (1-Bit Bus Switch with Level-Shifter) RoHS* COMPLIANT DESCRIPTION FEATURES

Power MOSFET. IRF9520PbF SiHF9520-E3 IRF9520 SiHF9520. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS V Gate-Source Voltage V GS ± 20

Optocoupler, Phototransistor Output, 4 Pin LSOP, Long Creepage Mini-Flat Package

High-Speed, Low r ON, SPST Analog Switch (1-Bit Bus Switch)

Small Signal Fast Switching Diode

Power MOSFET FEATURES. IRF540PbF SiHF540-E3 IRF540 SiHF540. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 100 V Gate-Source Voltage V GS ± 20

TSM2N7002K 60V N-Channel MOSFET

AAT3238 DATA SHEET. 300mA MicroPower TM High Performance LDO Linear Regulator. Applications. Features. General Description. Typical Application

High Performance Schottky Rectifier, 3.0 A

LM2704 Micropower Step-up DC/DC Converter with 550mA Peak Current Limit

Optocoupler, Phototransistor Output, with Base Connection, 300 V BV CEO

Schottky Rectifier, 100 A

Power MOSFET FEATURES. IRF9640PbF SiHF9640-E3 IRF9640 SiHF9640

DG2515, DG Ω, 235-MHz Bandwidth, Dual SPDT Analog Switch. Vishay Siliconix. Not for New Design. RoHS COMPLIANT DESCRIPTION FEATURES BENEFITS

Photovoltaic MOSFET Driver with Integrated Fast Turn-Off, Solid-State Relay

1 Form A Solid State Relay

High Performance Schottky Rectifier, 1 A

Silicon PIN Photodiode

Audio Jack Detector with Send / End Detect

NTMS4920NR2G. Power MOSFET 30 V, 17 A, N Channel, SO 8 Features

VN03. ISO high side smart power solid state relay PENTAWATT. Features. Description.

High Performance Schottky Rectifier, 1.0 A

Optocoupler, Phototransistor Output, with Base Connection

Thick Film Resistor Networks, Dual-In-Line, Molded DIP

CAT4101TV. 1 A Constant-Current LED Driver with PWM Dimming

Small Signal Fast Switching Diode FEATURES PART ORDERING CODE INTERNAL CONSTRUCTION TYPE MARKING REMARKS

SuperTan Extended (STE) Capacitors, Wet Tantalum Capacitors with Hermetic Seal

Schottky Rectifier, 1.0 A

DG2706. High Speed, Low Voltage, 3, Quad SPDT CMOS Analog Switch. Vishay Siliconix DESCRIPTION FEATURES APPLICATIONS

INTEGRATED CIRCUITS. 74LVC08A Quad 2-input AND gate. Product specification IC24 Data Handbook Jun 30

Power MOSFET FEATURES. IRF740PbF SiHF740-E3 IRF740 SiHF740. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 400 V Gate-Source Voltage V GS ± 20

Optocoupler, Phototransistor Output, Dual Channel, SOIC-8 Package

MC33064DM 5 UNDERVOLTAGE SENSING CIRCUIT

SMD Aluminum Solid Capacitors with Conductive Polymer

PAM2804. Pin Assignments. Description. Applications. Features. Typical Applications Circuit 1A STEP-DOWN CONSTANT CURRENT, HIGH EFFICIENCY LED DRIVER

High Power Infrared Emitting Diode, 940 nm, GaAlAs, MQW

TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TAR5SB15~TAR5SB50

1.5KE6.8A thru 1.5KE540A, 1N6267A thru 1N6303A. TRANSZORB Transient Voltage Suppressors. Vishay General Semiconductor.

P6KE6.8A thru P6KE540A. TRANSZORB Transient Voltage Suppressors. Vishay General Semiconductor. FEATURES PRIMARY CHARACTERISTICS

Schottky Rectifier, 1.0 A

AP KHz, 2A PWM BUCK DC/DC CONVERTER. Description. Pin Assignments V IN. Applications. Features. (Top View) GND GND. Output AP1509 GND GND

Dual P-Channel 2.5 V (G-S) MOSFET

LDS WLED Matrix Driver with Boost Converter FEATURES APPLICATION DESCRIPTION TYPICAL APPLICATION CIRCUIT

VN05N. High side smart power solid state relay PENTAWATT. Features. Description

AAT3520/2/4 MicroPower Microprocessor Reset Circuit

LM1084 5A Low Dropout Positive Regulators

Silicon PIN Photodiode

4-bit binary full adder with fast carry CIN + (A1 + B1) + 2(A2 + B2) + 4(A3 + B3) + 8(A4 + B4) = = S1 + 2S2 + 4S3 + 8S4 + 16COUT

N-Channel 20-V (D-S) 175 C MOSFET

N-Channel 60-V (D-S) MOSFET

Aluminum Electrolytic Capacitors Power Eurodin Printed Wiring

Optocoupler, Phototransistor Output, AC Input

Silicon NPN Phototransistor

Silicon PIN Photodiode

DG2731/2732/2733. Low Voltage, 0.4 Ω, Dual SPDT Analog Switch. Vishay Siliconix. RoHS COMPLIANT FEATURES

50 W Power Resistor, Thick Film Technology, TO-220

Advanced Monolithic Systems

Ultrabright White LED, Ø 3 mm

Aluminum Electrolytic Capacitors Power Economic Printed Wiring

1.5A Very L.D.O Voltage Regulator LM29150/29151/29152

Power Resistor for Mounting onto a Heatsink Thick Film Technology

TSM020N03PQ56 30V N-Channel MOSFET

Power Resistor Thick Film Technology

NUD4011. Low Current LED Driver

Reflective Optical Sensor with Transistor Output

Reflective Optical Sensor with Transistor Output

L6234. Three phase motor driver. Features. Description

High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs

Thick Film Resistor Networks, Military, MIL-PRF Qualified, Type RZ010 and RZ020 Dual-In-Line, Molded DIP

P-Channel 12 V (D-S) MOSFET

Preamplifier Circuit for IR Remote Control

2 Port, USB 2.0 High Speed (480 Mbps) Switch, DPDT Analog Switch

TYPICAL APPLICATION CIRCUIT. ORDER INFORMATION SOP-EP 8 pin A703EFT (Lead Free) A703EGT (Green)

10 ma LED driver in SOT457

LM78XX Series Voltage Regulators

L78MxxAB L78MxxAC. Precision 500 ma regulators. Features. Description

1 Form A Solid State Relay

NUD4001, NSVD4001. High Current LED Driver

400KHz 60V 4A Switching Current Boost / Buck-Boost / Inverting DC/DC Converter

MC14008B. 4-Bit Full Adder

Aluminum Electrolytic Capacitors Axial Miniature, Long-Life

High Accuracy, Ultralow IQ, 1 A, anycap Low Dropout Regulator ADP3338

Transcription:

Product is End of Life 12/2014 Slew Rate Controlled Load Switch SiP4280A FEATURES 1.5 V to 5.5 V Input Voltage range Very Low R DS(ON), typically 80 mω (5 V) Slew rate limited turn-on time options - SiP4280A-1: 1 ms - SiP4280A-3: 100 µs Fast shutdown load discharge option Low quiescent current < 25 na (typ) 4 kv ESD Rating 6 pin SOT23 package DESCRIPTION The SiP4280A is a P-Channel MOSFET power switch designed for high-side load switching applications. The output pass transistor is a P-Channel MOSFET transistor with typically 80 mω R DS(ON). The SiP4280A is available in two different versions of turn-on times. The SiP4280A-1 version has a slew rate limited turn-on time typically of 1 ms. The SiP4280A-3 version has a slew rate limited turn-on time typically of 100 µs and additionally offers a shutdown load discharge circuit to rapidly turn off a load circuit when the switch is disabled. APPLICATIONS Cellular telephones Digital still cameras Personal digital assistants (PDA) Hot swap supplies Notebook computers Personal communication devices Both SiP4280A load switch versions operate with an input voltage ranging from 1.5 V to 5.5 V, making them ideal for both 3 V and 5 V applications. The SiP4280A also features an under-voltage lock out which turns the switch off when an input undervoltage condition exists. Input logic levels are TTL and 2.5 V to 5.0 V CMOS compatible. The quiescent supply current is very low, typically 25 na. In shutdown mode, the supply current decreases to less than 1.0 µa. The SiP4280A is available in a 6 pin SOT23 package and is specified over - 40 C to 85 C temperature range. TYPICAL APPLICATION CIRCUIT VIN VIN OUT VOUT SiP4280A C IN C OUT 1 µf 0.1 µf 1 µf 1 µf ON ON/OFF GND GND GND 1

ABSOLUTE MAXIMUM RATINGS Parameter Symbol Steady State Unit Supply Input Voltage V IN - 0.3 to 6 Enable Input Voltage V ON - 0.3 to 6 V Output Voltage V OUT - 0.3 to V IN + 0.3 Maximum Switch Current I MAX 2.3 Maximum Pulsed Current V IN 2.5 I DM 6 A V IN < 2.5 I DM 3 Junction Temperature T J - 40 to 150 C Thermal Resistance SOT23-6L a Φ JA 180 C/W Power Dissipation SOT23-6L b P D 440 mw Notes: a. Device mounted with all leads soldered or welded to PC board. b. Derate 5.5 mw/ C above T A = 70 C. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating/conditions for extended periods may affect device reliability. RECOMMENDED OPERATING RANGE all voltages referenced to GND = 0 V Parameter Symbol Steady State Unit V IN 1.5 to 5.5 V Operating Temperature Range - 40 to 85 C SPECIFICATIONS Parameter Symbol Test Conditions Unless Specified V IN = 5 V, T A = - 40 to 85 C Notes: a. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum. b. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. c. For V IN 1.5 V see typical ON/OFF threshold curve. Limits Min a Typ b Max a Unit SiP4280A All Versions Operating Voltage V IN 1.5-5.5 V Quiescent Current I Q ON/OFF = active - 1 Off Supply Current I Q(OFF) ON/OFF = inactive, OUT = open - 0.01 1 µa Off Switch Current I SD(OFF) ON/OFF = inactive, V OUT = 0-0.01 1 V IN = 5 V, T A = 25 C - 80 120 On-Resistance R DS(ON) V IN = 4.2 V, T A = 25 C - 85 130 V IN = 3 V, T A = 25 C - 100 150 mω V IN = 1.8 V, T A = 25 C - 160 250 On-Resistance Temp-Coefficient TC RDS - 2800 - ppm/ C ON/OFF Input Low Voltage c V IL V IN = 1.8 V to 5.5 V 0.4 - - ON/OFF Input High Voltage V IH V IN = 2.7 V to < 4.2 V - - 2 V IN = 1.5 V to 2.7 V - - 1.4 V V IN 4.2 V to 5.5 V - - 2.4 ON/OFF Input Leakage I SINK V ON/OFF = 5.5 V - - 1 µa SiP4280A-1 Version Output Turn-On Delay Time T D(ON) V IN = 5 V, R LOAD = 10 Ω, T A = 25 C - 20 40 Output Turn-On Rise Time T ON V IN = 5 V, R LOAD = 10 Ω, T A = 25 C - 1000 1500 µs Output Turn-Off Delay Time T D(OFF) V IN = 5 V, R LOAD = 10 Ω, T A = 25 C - 4 10 SiP4280A-3 Version Output Turn-On Delay Time T D(ON) V IN = 5 V, R LOAD = 10 Ω, T A = 25 C - 20 40 Output Turn-On Rise Time T ON V IN = 5 V, R LOAD = 10 Ω, T A = 25 C - 100 150 µs Output Turn-Off Delay Time T D(OFF) V IN = 5 V, R LOAD = 10 Ω, T A = 25 C - 4 10 Output Pull-Down Resistance R PD ON/OFF = inactive, T A = 25 C - 150 250 Ω 2

PIN CONFIGURATION PIN DESCRIPTION Pin Number SOT23-6 Pin Name Description 4, 6 V IN This pin is the P-Channel MOSFET source connection 3 ON/OFF Logic high enables the IC; logic low disables the IC 2, 5 GND Ground connection 1 OUT This pin is the P-Channel MOSFET drain connection SELECTION GUIDE Part Number Slew Rate (typ) Active Pull Down Enable SiP4280A-1-T1-E3 1 ms No Active High SiP4280A-3-T1-E3 100 µs Yes Active High ORDERING INFORMATION Part Number Marking Temperature Range Package SiP4280ADT-1-T1-E3 L4XX SOT23-6L - 40 C to 85 C SiP4280ADT-3-T1-E3 L6XX SOT23-6L 3

TYPICAL CHARACTERISTICS internally regulated, 25 C unless noted 90 250 80 230 70 210 2 A 60 190 1 A I Q (na ) 50 40 30 20 V IN = 5 V r D S(ON ) (mω) 170 150 130 110 90 100 ma 500 ma 10 V IN = 3 V 70 0-40 - 20 0 20 40 60 80 100 50 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 Temperature ( C) Quiescent Current vs. Temperature V IN (V) R DS(ON) vs. Input Voltage 140 2.2 130 2.0 r D S(ON ) (mω) 120 110 100 90 80 V = 3 V V = 5 V (V) ON/OFF Threshold 1.8 1.6 1.4 1.2 1.0 0.8 V IH V IL 70 0.6 60-40 - 25 0 25 50 75 85 Temperature ( C) R DS(ON) vs. Temperature 0.4 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 V IN (V) ON/OFF Threshold vs. Input Voltage 1.0 0.8 IoffSW (µa) 0.6 0.4 0.2 0.0-40 - 20 0 20 40 60 80 100 Temperature ( C) Off Switch Current vs. Temperature 4

TYPICAL WAVEFORMS Time (500 µ s/div) Time (5 µs/div) SiP4280A-1 Turn-On (V IN = 3 V, R LOAD = 6 Ω) SiP4280A-1 Turn-Off (V IN = 3 V, R LOAD = 6 Ω) Time (500 µ s/div) Time (5 µ s/div) SiP4280A-1 Turn-On (V IN = 5 V, R LOAD = 10 Ω) SiP4280A-1 Turn-Off (V IN = 5 V, R LOAD = 10 Ω) 5

TYPICAL WAVEFORMS Time (50 µ s/div) Time (5 µs/div) SiP4280A-3 Turn-On (V IN = 3 V, R LOAD = 6 Ω) SiP4280A-3 Turn-Off (V IN = 3 V, R LOAD = 6 Ω) Time (50 µ s/div) Time (5 µ s/div) SiP4280A-3 Turn-On (V IN = 5 V, R LOAD = 10 Ω) SiP4280A-3 Turn-Off (V IN = 5 V, R LOAD = 10 Ω) 6

BLOCK DIAGRAM SiP4280A 3 Version only SiP4280A Functional Block Diagramm DETAILED DESCRIPTION The SiP4280A is a P-Channel MOSFET power switches designed for high-side slew rate controlled load switching applications. Once turned on, the slewrate control circuitry is activated and current is ramped in a linear fashion until it reaches the level required for the output load condition. This is accomplished by first elevating the gate voltage of the MOSFET up to its threshold voltage and then by linearly increasing the gate voltage until the MOSFET becomes fully enhanced. At this point, the gate voltage is then quickly increased to the full input voltage to reduce R DS(ON) of the MOSFET switch and minimize any associated power losses. The SiP4280A-1 version has a modest 1 ms turn on slew rate feature, which significantly reduces in-rush current at turned on time and permits the load switch to be implemented with a small input capacitor, or no input capacitor at all, saving cost and space. In addition to a 100 µs minimized slew rate, the SIP4280A-3 features a shutdown output discharge circuit which is activated at shutdown (when the part is disabled through the ON/OFF pin) and discharges the output pin through a small internal resistor hence, turning off the load. In instances where the input voltage falls below 1.4 V (typically) the under voltage lock-out circuitry protects the MOSFET switch from entering the saturation region or operation by shutting down the chip. 7

APPLICATION INFORMATION Input Capacitor While a bypass capacitor on the input is not required, a 1 µf or larger capacitor for C IN is recommended in almost all applications. The Bypass capacitor should be placed as physically close as possible to the SiP4280A to be effective in minimizing transients on the input. Ceramic capacitors are recommended over tantalum because of their ability to withstand input current surges from low impedance sources such as batteries in portable devices. Output Capacitor A 0.1 µf capacitor or larger across V OUT and GND is recommended to insure proper slew operation. C OUT may be increased without limit to accommodate any load transient condition with only minimal affect on the SiP4280A turn on slew rate time. There are no ESR or capacitor type requirement. Enable The ON/OFF pin is compatible with both TTL and CMOS logic voltage levels. Reverse Voltage Conditions and Protection The P-Channel MOSFET pass transistor has an intrinsic diode that is reversed biased when the input voltage is greater than the output voltage. Should V OUT exceed V IN, this intrinsic diode will become forward biased and allow excessive current to flow into the IC thru the V OUT pin and potentially damage the IC device. Therefore extreme care should be taken to prevent V OUT from exceeding V IN. table. However, The real limiting factor for the safe operating load current is the thermal power dissipation of the package. To obtain the highest power dissipation the power pad of the device should be connected to a heat sink on the printed circuit board. The maximum power dissipation in any application is dependant on the maximum junction temperature, T J(MAX) = 125 C, the junction-to-ambient thermal resistance θ J-A = 180 C for SOT23-6, and the ambient temperature, T A, which may be formulaically expressed as: P (max) T (max) T J A = θ J A = 125 T A 140 It then follows that, assuming an ambient temperature of 70 C, the maximum power dissipation will be limited to about 305 mw for SOT23-6. In any application, the maximum continuous switch current is a function two things: the package power dissipation and the R DS(ON) at the ambient temperature. As an example let us calculate the worst-case maximum load current at T A = 70 C. The worst case R DS(ON) at 25 C occurs at an input voltage of 1.8 V and is equal to 250 mω. The R DS(ON) at 70 C can be extrapolated from this data using the following formula R DS(ON) (at 70 C) = R DS(ON) (at 25 C) x (1 + T C x ΔT) Where T C is 2090 ppm/ C. Continuing with the calculation we have R DS(ON) (at 70 C) = 250 mω x (1 + 0.00209 x (70 C - 25 C)) = 278 mω The maximum current limit is then determined by In conditions where V OUT exceeds V IN a Schottky diode in parallel with the internal intrinsic diode is recommended to protect the SiP4280A. I LOAD (max) P (max) R DS( ON) Thermal Considerations The SiP4280A is designed to maintain a constant output load current. The internal switch is designed to operate at 2.3 A of current, as stated in the ABS MAX which in case is 1.05 A for SOT23-6. Under the stated input voltage condition, if the calculated current limit is exceeded the internal die temperature will rise and eventually, possibly damage the device. maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http:///ppg?73602 8

θ Thin SOT-23 : 5- and 6-Lead (Power IC only) Package Information e1 6 5 4 E1 E 1 2 3 -B- 4 Pin #1 indetifier e b 0.15 M C B A D -A- R 4 x θ1 0.17 ref c A2 A R L Gage plane 0.08 C -C- Notes: 1. Use millimeters as the primary measurement. 2. Dimensioning and tolerances conform to ASME Y14.5M. - 1994. 3. This part is fully compliant with JEDEC MO-193. 4. Detail of Pin #1 indentifier is optional. A1 Seating plane 4 x θ1 L (L1) Seating plane MILLIMETERS INCHES DIM. MIN. NOM. MAX. MIN. NOM. MAX. A 0.91 1.00 1.10 0.036 0.039 0.043 A1 0.00 0.05 0.10 0.000 0.002 0.004 A2 0.85 0.90 1.00 0.033 0.035 0.039 b 0.30 0.40 0.45 0.012 0.016 0.018 c 0.10 0.15 0.20 0.004 0.006 0.008 D 2.85 2.95 3.10 0.112 0.116 0.122 E 2.70 2.85 2.98 0.106 0.112 0.117 E1 1.525 1.65 1.70 0.060 0.065 0.067 e 0.95 BSC 0.0374 BSC L 0.30 0.40 0.50 0.014-0.020 L1 0.60 ref. 0.024 BSC L2 0.25 BSC 0.010 BSC 0 4 8 0 4 8 1 4 10 12 4 10 12 ECN: E13-1126-Rev. B, 01-Jul-13 DWG: 5926 Revision: 01-Jul-13 1 Document Number: 72821 For technical questions, contact: powerictechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?91000

Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, Vishay ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer s technical experts. Product specifications do not expand or otherwise modify Vishay s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Revision: 13-Jun-16 1 Document Number: 91000