UNISONIC TECHNOLOGIES CO., LTD 8A, 75V N-CHANNEL POWER MOSFET DESCRIPTION TO-22 TO-22F The UTC 75N75 is n-channel enhancement mode power field effect transistors with stable off-state characteristics, fast switching speed, low thermal resistance, usually used at telecom and computer application. FEATURES TO-22F TO-22F2 * R DS(ON) =mω @V GS =V, I D =4A * Ultra low gate charge ( typical 7 nc ) * Fast switching capability * Low reverse transfer Capacitance (C RSS = typical 24 pf ) * Avalanche energy Specified * Improved dv/dt capability, high ruggedness SYMBOL TO-263 ORDERING INFORMATION Ordering Number Pin Assignment Package Lead Free Halogen Free 2 3 Packing 75N75L-TA3-T 75N75G-TA3-T TO-22 G D S Tube 75N75L-TF-T 75N75G-TF-T TO-22F G D S Tube 75N75L-TF2-T 75N75G-TF2-T TO-22F2 G D S Tube 75N75L-TF3-T 75N75G-TF3-T TO-22F G D S Tube 75N75L-TQ2-T 75N75G-TQ2-T TO-263 G D S Tube 75N75L-TQ2-R 75N75G-TQ2-R TO-263 G D S Tape Reel Note: Pin Assignment: G: Gate D: Drain S: Source of 6 Copyright 23 Unisonic Technologies Co., Ltd. QW-R52-97.F
ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage V DSS 75 V Gate-Source Voltage V GSS ±2 V Continuous Drain Current T C = 25 C I D 8 A Pulsed Drain Current (Note 2) I DM 32 A Single Pulsed Avalanche Energy (Note 3) E AS 7 mj Peak Diode Recovery dv/dt (Note 4) dv/dt 2 V/ns TO-22/TO-263 3 W Power Dissipation TO-22F/ TO-22F P D 48 W TO-22F2 5 W Junction Temperature T J +75 C Storage Temperature T STG -55 ~ +75 C Note:. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Pulse width limited by safe operating area 3. Starting T J =25 C, I D =4A, V DD =37.5V 4. I SD 8A, di/dt 3A/µs, V DD BV DSS, T J T JMAX THERMAL DATA PARAMETER SYMBOL RATINGS UNIT Junction to Ambient θ JA 62.5 C/W TO-22/TO-263.5 C/W Junction to Case TO-22F/ TO-22F θ JC 2.6 C/W TO-22F2 2.5 C/W UNISONIC TECHNOLOGIES CO., LTD 2 of 6 QW-R52-97.F
ELECTRICAL CHARACTERISTICS (T C = 25 C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BV DSS V GS = V, I D = 25 µa 75 V Drain-Source Leakage Current I DSS V DS = 75 V, V GS = V µa Gate-Source Leakage Current Forward V GS = 2V, V DS = V na I GSS Reverse V GS = -2V, V DS = V - na ON CHARACTERISTICS Gate Threshold Voltage V GS(TH) V DS = V GS, I D = 25 µa 2. 3. 4. V Static Drain-Source On-State Resistance R DS(ON) V GS = V, I D = 4 A 9.5 mω DYNAMIC CHARACTERISTICS Input Capacitance C ISS 37 pf V GS = V, V DS = 25 V Output Capacitance C OSS 773 pf f = MHz Reverse Transfer Capacitance C RSS 86 pf SWITCHING CHARACTERISTICS Turn-On Delay Time t D(ON) 33 5 ns Turn-On Rise Time t R V DD = 37.5V, I D =45A, 28 232 ns Turn-Off Delay Time t D(OFF) V GS =V, R G =4.7Ω 354 37 ns Turn-Off Fall Time t F 246 26 ns Total Gate Charge Q G 43 44 nc V DS = 6V, V GS = V Gate-Source Charge Q GS 7 nc I D = 8A Gate-Drain Charge Q GD 2 nc SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage (Note 2) V SD V GS = V, I S = 8A.5 V Continuous Source Current I S 8 A Pulsed Source Current (Note ) I SM 32 A Reverse Recovery Time t RR I S = 8A, V DD = 25 V 32 ns Reverse Recovery Charge Q RR di F / dt = A/µs 66 µc Note:. Pulse width limited by safe operating area 2. Pulsed: pulse duration=3µs, duty cycle.5% UNISONIC TECHNOLOGIES CO., LTD 3 of 6 QW-R52-97.F
TEST CIRCUITS AND WAVEFORMS D.U.T. + V D S - + - L V GS R G Same Type as D.U.T. Drive r * dv/dt controlled by R G * I SD controlled by pulse period * D.U.T.-Device Under Test V DD A Peak Diode Recovery dv/dt Test Circuit V GS (Driver) P.W. Period D= P. W. Period V GS = V I FM, Body Diode Forward Current I SD (D.U.T.) di/dt I RM Body Diode Reverse Current Body Diode Recovery dv/dt V DS (D.U.T.) V DD Body Diode Forward Voltage Drop B Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD 4 of 6 QW-R52-97.F
TEST CIRCUITS AND WAVEFORMS (Cont.) 2A Switching Test Circuit 2B Switching Waveforms 3A Gate Charge Test Circuit 3B Gate Charge Waveform 4A Unclamped Inductive Switching Test Circuit 4B Unclamped Inductive Switching Waveforms UNISONIC TECHNOLOGIES CO., LTD 5 of 6 QW-R52-97.F
TYPICAL CHARACTERISTICS Drain Current, ID (µa) 3 25 2 5 5 Drain Current vs. Gate Threshold Voltage.5.5 2. 2.5 3. 3.5 4. Gate Threshold Voltage, V TH (V) Drain Current, ID (µa) 45 4 35 3 25 2 5 5 Drain Current vs. Drain-Source Breakdown Voltage 2 4 6 8 Drain-Source Breakdown Voltage, BV DSS (V) Drain Current, ID (A) 2.8.6.4.2.8.6.4.2 Drain-Source On-State Resistance Characteristics V GS =V I D =A 5 V GS =V I D =2A 5 Drain to Source Voltage, V DS (mv) Drain Current, ID (A) 2 2.2 8 6 4 2 Drain Current vs. Source to Drain Voltage.4.6.8 Source to Drain Voltage, V SD (V). UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD 6 of 6 QW-R52-97.F