Amplifier Transistor PNP Silicon Features These are PbFree Devices* 3 COLLECTOR MAXIMUM RATINGS Rating Symbol Value Unit CollectorEmitter Voltage V CEO CollectorBase Voltage V CBO EmitterBase Voltage V EBO Collector Current Continuous I C madc Total Device Dissipation @ Derate above 25 C Total Device Dissipation @ T C = 25 C Derate above 25 C Operating and Storage Junction Temperature Range THERMAL CHARACTERISTICS P D 625 P D 1.5 12 mw mw/ C W mw/ C T J, T stg 55 to +1 C Characteristic Symbol Max Unit Thermal Resistance, JunctiontoAmbient R JA C/W Thermal Resistance, JunctiontoCase R JC 83.3 C/W Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. TO92 CASE 29 STYLE 1 2 BASE 1 EMITTER 1 1 2 2 3 3 STRAIGHT LEAD BENT LEAD BULK PACK TAPE & REEL AMMO PACK MARKING DIAGRAM 2N 87 AYWW A = Assembly Location Y = Year WW = Work Week = PbFree Package (Note: Microdot may be in either location) ORDERING INFORMATION Device Package Shipping 2N87G 2N87RLRAG TO92 (PbFree) TO92 (PbFree) 0 Units / Bulk 0/Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Semiconductor Components Industries, LLC, 13 April, 13 Rev. 5 1 Publication Order Number: 2N87/D
ELECTRICAL CHARACTERISTICS ( unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS CollectorEmitter Breakdown Voltage (Note 1) (I C = madc, I B = 0) V (BR)CEO CollectorBase Breakdown Voltage (I C = Adc, I E = 0) V (BR)CBO Collector Cutoff Current (V CB = 35, I E = 0) I CBO nadc Emitter Cutoff Current (V EB =, I C = 0) I EBO nadc ON CHARACTERISTICS DC Current Gain (I C = Adc, V CE = ) (I C = madc, V CE = ) (I C = madc, V CE = ) (Note 1) h FE 2 2 2 800 CollectorEmitter Saturation Voltage (I C = madc, I B = madc) V CE(sat) 0.3 BaseEmitter On Voltage (I C = madc, V CE = ) V BE(on) 5 SMALLSIGNAL CHARACTERISTICS CurrentGain Bandwidth Product (I C = Adc, V CE =, f = MHz) f T 40 MHz CollectorBase Capacitance (V CB =, I E = 0, f = MHz) C cb 4.0 pf SmallSignal Current Gain (I C = madc, V CE =, f = khz) h fe 2 900 Noise Figure (I C = Adc, V CE =, R S = k, f = Hz/15.7 khz) (I C = Adc, V CE =, R S = k, f = khz) NF db 1. Pulse Test: Pulse Width 300 s, Duty Cycle %. 2
TYPICAL NOISE CHARACTERISTICS (V CE =, ) en, NOISE VOLTAGE (nv) ma I C = A 30 A A 300 A k k k k f, FREQUENCY (Hz) Figure 1. Noise Voltage BANDWIDTH = Hz R S 0 In, NOISE CURRENT (pa) 0.7 0.5 0.3 I C = ma 300 A A 30 A A 0.1 k k k k f, FREQUENCY (Hz) Figure 2. Noise Current BANDWIDTH = Hz R S RS, SOURCE RESISTANCE (OHMS) M k k k k k k k k k 0.5 db db I C, COLLECTOR CURRENT ( A) BANDWIDTH = Hz db db RS, SOURCE RESISTANCE (OHMS) M k k k k k k k k k db db 30 300 0 k 30 300 0 k 0.5 db I C, COLLECTOR CURRENT ( A) BANDWIDTH = Hz db db db Figure 3. Narrow Band, Hz Figure 4. Narrow Band, khz RS, SOURCE RESISTANCE (OHMS) M k k k k k k k k k 0.5 db I C, COLLECTOR CURRENT ( A) Figure 5. Wideband Hz to 15.7 khz db db db db 30 300 0 k Noise Figure is Defined as: NF log e n 2 4KTRS In 2 RS 2 1 2 4KTRS e n = Noise Voltage of the Transistor referred to the input. (Figure 3) I n = Noise Current of the Transistor referred to the input. (Figure 4) K = Boltzman s Constant (1.38 x 23 j/ K) T = Temperature of the Source Resistance ( K) R S = Source Resistance (Ohms) 3
TYPICAL STATIC CHARACTERISTICS 400 T J = 125 C h FE, DC CURRENT GAIN 80 60 40 0.003 25 C - 55 C Figure 6. DC Current Gain V CE = V V CE = V 0.005 0.01 0.02 0.03 0.05 0.07 0.1 0.3 0.5 0.7 30 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 0.6 0.4 0 0 0.002 0.005 0.01 0.02 0.05 0.1 0.5 0 15 25 30 35 40 I B, BASE CURRENT (ma) I C = ma ma ma ma IC, COLLECTOR CURRENT (ma) 80 60 40 PULSE WIDTH = 300 s DUTY CYCLE % 3 A I B = 400 A 300 A 2 A A V CE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 1 A A A Figure 7. Collector Saturation Region Figure 8. Collector Characteristics V, VOLTAGE (VOLTS) 1.4 1.2 0.6 0.4 V BE(sat) @ I C /I B = V BE(on) @ V CE = V 1.6 VB for V BE V CE(sat) @ I C /I B = 0 2.4 0.1 0.5 0.1 0.5 V, TEMPERATURE COEFFICIENTS (mv/ C) θ 1.6 0 *APPLIES for I C /I B h FE /2 * VC for V CE(sat) 25 C to 125 C -55 C to 25 C 25 C to 125 C -55 C to 25 C Figure 9. On Voltages Figure. Temperature Coefficients 4
TYPICAL DYNAMIC CHARACTERISTICS t, TIME (ns) 300 30 t d @ V BE(off) = 0.5 V 30 t r V CC = V I C /I B = t, TIME (ns) 0 0 300 30 - - t s t f V CC = - V I C /I B = I B1 = I B2 - - - - - - 30 - - - Figure 11. TurnOn Time Figure 12. TurnOff Time f, T CURRENT-GAIN BANDWIDTH PRODUCT (MHz) 300 V CE = V V 0.5 0.7 30 C, CAPACITANCE (pf) 0.05 C ib C ob 0.1 0.5 V R, REVERSE VOLTAGE (VOLTS) Figure 13. CurrentGain Bandwidth Product Figure 14. Capacitance h ie, INPUT IMPEDANCE (k Ω ) 0.7 0.5 0.3 V CE = - f = khz 0.1 0.5 h oe, OUTPUT ADMITTANCE ( mhos) 30 V CE = f = khz 0.1 0.5 Figure 15. Input Impedance Figure 16. Output Admittance 5
r(t) TRANSIENT THERMAL RESISTANCE (NORMALIZED) 0.7 0.5 0.3 0.1 0.07 0.05 0.03 0.02 0.01 0.01 D = 0.5 0.01 0.1 0.05 0.02 SINGLE PULSE 0.02 0.05 0.1 0.5 k k k k k k k t, TIME (ms) P (pk) FIGURE 19 t 1 t2 DUTY CYCLE, D = t 1 /t 2 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t 1 (SEE AN569) Z JA(t) = r(t) w R JA T J(pk) - T A = P (pk) Z JA(t) Figure 17. Thermal Response IC, COLLECTOR CURRENT (ma) IC, COLLECTOR CURRENT (na) 400 60 40 6.0 4.0 4 3 2 1 0-1 -2-40 V CE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 18. ActiveRegion Safe Operating Area V CC = 30 V T J = 1 C T C = 25 C CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT I CEO - 0 + + 40 + 60 + 80 + + 1 + 140 + 160 dc T J, JUNCTION TEMPERATURE ( C) ms s dc s s 4.0 6.0 8.0 40 I CBO AND I CEX @ V BE(off) = V The safe operating area curves indicate I C V CE limits of the transistor that must be observed for reliable operation. Collector load lines for specific circuits must fall below the limits indicated by the applicable curve. The data of Figure 18 is based upon T J(pk) = 1 C; T C or T A is variable depending upon conditions. Pulse curves are valid for duty cycles to % provided T J(pk) 1 C. T J(pk) may be calculated from the data in Figure 17. At high case or ambient temperatures, thermal limitations will reduce the power than can be handled to values less than the limitations imposed by second breakdown. DESIGN NOTE: USE OF THERMAL RESPONSE DATA A train of periodical power pulses can be represented by the model as shown in Figure 19. Using the model and the device thermal response the normalized effective transient thermal resistance of Figure 17 was calculated for various duty cycles. To find Z JA(t), multiply the value obtained from Figure 17 by the steady state value R JA. Example: The 2N87 is dissipating watts peak under the following conditions: t 1 = ms, t 2 = ms (D = ) Using Figure 17 at a pulse width of ms and D =, the reading of r(t) is 2. The peak rise in junction temperature is therefore T = r(t) x P (pk) x R JA = 2 x x = 88 C. For more information, see ON Semiconductor Application Note AN569/D, available from the Literature Distribution Center or on our website at www.onsemi.com. Figure 19. Typical Collector Leakage Current 6
PACKAGE DIMENSIONS TO92 (TO226) CASE 2911 ISSUE AM R A N B STRAIGHT LEAD BULK PACK NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. P L SEATING INCHES MILLIMETERS PLANE K DIM MIN MAX MIN MAX A 0.175 05 4.45 5. B 0.1 4.32 5.33 C 0.125 0.165 3.18 4.19 D 0.016 0.021 0.407 0.533 X X D G 0.045 0.055 1.15 1.39 H 0.095 0.5 2.42 2.66 G J 0.015 0.0 0.39 0. H J K 0. --- 12. --- V C L --- 6.35 --- N 0.080 0.5 4 2.66 SECTION XX R 0.115 --- 2.93 --- 1 N V 0.135 --- 3.43 --- P --- 0. --- 2.54 R T SEATING PLANE P G A X X V 1 B K C N BENT LEAD TAPE & REEL AMMO PACK D J SECTION XX NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. MILLIMETERS DIM MIN MAX A 4.45 5. B 4.32 5.33 C 3.18 4.19 D 0.40 0.54 G 2.40 2.80 J 0.39 0. K 12. --- N 4 2.66 P 1. 4.00 R 2.93 --- V 3.43 --- STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC s product/patent coverage may be accessed at www.onsemi.com/site/pdf/patentmarking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 3036752175 or 8003443860 Toll Free USA/Canada Fax: 3036752176 or 8003443867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 8002829855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 29 Japan Customer Focus Center Phone: 8135817 7 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your loca Sales Representative 2N87/D