OptiMOS 2 Small-Signal-Transistor Features N-channel Enhancement mode Super Logic level (2.5V rated) Avalanche rated Product Summary V DS 2 V R DS(on),max V GS =4.5 V 14 mω V GS =2.5 V 25 I D 1.5 A Qualified according to AEC Q11 1% lead-free; RoHS compliant Halogen-free according to IEC61249-2-21 PG-SOT23 3 1 2 Type Package Tape and Reel Information Marking Lead Free Packing BSS214N PG-SOT23 H6327: 3 pcs/ reel SVs Yes Non dry Maximum ratings, at T j =25 C, unless otherwise specified Parameter Symbol Conditions Value Unit Continuous drain current I D T A =25 C 1.5 A T A =7 C 1.2 Pulsed drain current I D,pulse T A =25 C 6 Avalanche energy, single pulse E AS I D =1.5 A, R GS =25 Ω 3.7 mj Reverse diode dv /dt dv /dt I D =1.5 A, V DS =16 V, di /dt =2 A/µs, T j,max =15 C 6 kv/µs Gate source voltage V GS ±12 V Power dissipation P tot T A =25 C.5 W Operating and storage temperature T j, T stg -55... 15 C ESD Class JESD22-A114 -HBM (<25V) Soldering Temperature 26 C IEC climatic category; DIN IEC 68-1 55/15/56 Rev 2.3 page 1 211-7-8
Parameter Symbol Conditions Values Unit min. typ. max. Thermal characteristics Thermal resistance, junction - ambient R thja minimal footprint 1) - - 25 K/W Electrical characteristics, at T j =25 C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS = V, I D = 25 µa 2 - - V Gate threshold voltage V GS(th) V DS =V GS, I D =3.7 µa.7.95 1.2 Drain-source leakage current I DSS V DS =2 V, V GS = V, T j =25 C - - 1 μa V DS =2 V, V GS = V, T j =15 C - - 1 Gate-source leakage current I GSS V GS =12 V, V DS = V - - 1 na Drain-source on-state resistance R DS(on) V GS =2.5 V, I D =.7 A - 175 25 mω V GS =4.5 V, I D =1.5 A - 16 14 Transconductance g fs V DS >2 I D R DS(on)max, I D =1.2 A - 4 - S 1) Performed on 4mm 2 FR4 PCB. The traces are 1mm wide, 7μm thick and 2mm long; they are present on both sides of the PCB. Rev 2.3 page 2 211-7-8
Parameter Symbol Conditions Values Unit min. typ. max. Dynamic characteristics Input capacitance C iss - 17 143 pf Output capacitance C oss V GS = V, V DS =1 V, f =1 MHz - 46 62 Reverse transfer capacitance C rss - 6 - Turn-on delay time t d(on) - 4.1 - ns Rise time t r V DD =1 V, V GS =4.5 V, - 7.8 - Turn-off delay time t d(off) I D =1.5 A, R G =6 Ω - 6.8 - Fall time t f - 1.4 - Gate Charge Characteristics Gate to source charge Q gs -.24 - nc Gate to drain charge Q gd V DD =1 V, I D =1.5 A, -.2 - Gate charge total Q g V GS = to 5 V -.8 - Gate plateau voltage V plateau - 2.2 - V Reverse Diode Diode continous forward current I S - -.5 A T A =25 C Diode pulse current I S,pulse - - 6 Diode forward voltage V SD V GS = V, I F =1.5 A, T j =25 C -.8 1.1 V Reverse recovery time t rr V R =1 V, I F =1.5 A, - 8.4 - ns Reverse recovery charge Q rr di F /dt =1 A/µs - 1.7 - nc Rev 2.3 page 3 211-7-8
1 Power dissipation 2 Drain current P tot =f(t A ) I D =f(t A ); V GS 4.5 V.5 1.5.375 P tot [W].25 1.125.5 4 8 12 T A [ C] 2 4 6 8 1 12 14 T A [ C] 3 Safe operating area 4 Max. transient thermal impedance I D =f(v DS ); T A =25 C; D = Z thja =f(t p ) parameter: t p parameter: D =t p /T 1 1 1 3 1 µs 1 µs 1 1 ms 1 µs 1 ms 1 2.5.2.1 1-1 DC Z thja [K/W] 1 1.5.2.1 single pulse 1-2 1 1-3 1-2 1-1 1 1 1 1 2 1-1 1-5 1-4 1-3 1-2 1-1 1 1 1 1 2 V DS [V] t p [s] Rev 2.3 page 4 211-7-8
5 Typ. output characteristics 6 Typ. drain-source on resistance I D =f(v DS ); T j =25 C R DS(on) =f(i D ); T j =25 C parameter: V GS parameter: V GS 8 3.5 V 24 2.2 V 2.5 V 6 3 V 2 4 4.5 V 2.5 V R DS(on) [mω] 16 12 4.5 V 6 V 3 V 3.5 V 8 2 2.3 V 4 2 V 1.8 V 1 2 3 V DS [V] 1 2 3 4 5 6 7 Typ. transfer characteristics 8 Typ. forward transconductance I D =f(v GS ); V DS >2 I D R DS(on)max g fs =f(i D ); T j =25 C 1.5 1 8 1 6 g fs [S] 4.5 15 C 25 C 2 1 2 3 V GS [V] 2 4 6 8 Rev 2.3 page 5 211-7-8
9 Drain-source on-state resistance 1 Typ. gate threshold voltage R DS(on) =f(t j ); I D =1.5 A; V GS =4.5 V V GS(th) =f(t j ); V DS =V GS ; I D =3.7 µa parameter: I D 24 1.6 2 16 98% 1.2 98% R DS(on) [mω] 12 typ V GS(th) [V].8 typ 8 2%.4 4-6 -2 2 6 1 14 T j [ C] -6-2 2 6 1 14 T j [ C] 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(v DS ); V GS = V; f =1 MHz; T j =25 C I F =f(v SD ) parameter: T j 1 3 1 1 1 2 Ciss 1 Coss C [pf] I F [A] 1-1 15 C, 98% 1 1 Crss 1-2 15 C 25 C 25 C, 98% 1 5 1 15 2 V DS [V] 1-3.4.8 1.2 1.6 V SD [V] Rev 2.3 page 6 211-7-8
3 Safe operating area BSS214N 13 Avalanche characteristics 14 Typ. gate charge I AS =f(t AV ); R GS =25 W parameter: T j(start) 1 1 V GS = f(q gate ); I D =6A pulsed parameter: V DD 6 5 4 V 1 V 16 V 4 I AV [A] 1 25 C V GS [V] 3 1 C 2 125 C 1 1-1 1 1 1 t AV [µs] 1 2 1 3.5 1 Q gate [nc] 15 Drain-source breakdown voltage 16 Gate charge waveforms V BR ( DSS) =f(t j ); I D =25 µa 25 24 23 V GS Q g 22 V BR(DSS) [V] 21 2 19 V gs(th) 18 17 Q g(th) Q sw Q gate 16-6 -2 2 6 1 14 18 T j [ C] Q gs Q gd Rev 2.3 page 7 211-7-8
SOT23 Package Outline: Footprint: Packaging: Dimensions in mm Rev 2.3 page 8 211-7-8
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