2N6426, 2N6426 is a Preferred Device Darlington Transistors NPN Silicon Features These are PbFree Devices* MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage V CEO 40 Vdc Collector Base Voltage V CBO 40 Vdc Emitter Base Voltage V EBO 12 Vdc Collector Current Continuous I C 0 madc Total Device Dissipation @ T A = 25 C Derate above 25 C Total Device Dissipation @ T C = 25 C Derate above 25 C Operating and Storage Junction Temperature Range THERMAL CHARACTERISTICS P D 625 P D 1.5 12 mw mw/ C W mw/ C T J, T stg 55 to +1 C Characteristic Symbol Max Unit Thermal Resistance, JunctiontoAmbient R JA 0 C/W Thermal Resistance, JunctiontoCase R JC 83.3 C/W Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. TO92 CASE 29 STYLE 1 COLLECTOR 3 BASE 2 EMITTER 1 1 1 2 2 3 3 STRAIGHT LEAD BENT LEAD BULK PACK TAPE & REEL AMMO PACK MARKING DIAGRAM 2N 642x AYWW x = 6 or 7 A = Assembly Location Y = Year WW = Work Week = PbFree Package (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 07 March, 07 Rev. 3 1 Publication Order Number: 2N6426/D
2N6426, ELECTRICAL CHARACTERISTICS (T A = 25 C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS CollectorEmitter Breakdown Voltage, (Note 1) (I C = madc, V BE = 0) V (BR)CEO 40 Vdc CollectorBase Breakdown Voltage (I C = 0 Adc, I E = 0) EmitterBase Breakdown Voltage (I E = Adc, I C = 0) Collector Cutoff Current (V CE = 25 Vdc, I B = 0) Collector Cutoff Current (V CB = 30 Vdc, I E = 0) Emitter Cutoff Current (V EB = Vdc, I C = 0) V (BR)CBO 40 Vdc V (BR)EBO 12 Vdc I CES Adc I CBO nadc I EBO nadc ON CHARACTERISTICS DC Current Gain, (Note 1) (I C = madc, V CE = Vdc) 2N6426 h FE,000,000 0,000 0,000 (I C = 0 madc, V CE = Vdc) 2N6426 30,000,000 300,000 0,000 (I C = 0 madc, V CE = Vdc) 2N6426,000 14,000 0,000 140,000 CollectorEmitter Saturation Voltage (I C = madc, I B = madc) (I C = 0 madc, I B = madc V CE(sat) 0.71 0.9 1.2 1.5 Vdc BaseEmitter Saturation Voltage (I C = 0 madc, I B = madc) BaseEmitter On Voltage (I C = madc, V CE = Vdc) SMALLSIGNAL CHARACTERISTICS Output Capacitance (V CB = Vdc, I E = 0, f = MHz) Input Capacitance (V EB = Vdc, I C = 0, f = MHz) V BE(sat) 1.52 Vdc V BE(on) 1.24 1.75 Vdc C obo 5.4 7.0 pf C ibo 15 pf Input Impedance (I C = madc, V CE = Vdc, f = khz) 2N6426 h ie 0 00 00 k SmallSignal Current Gain (I C = madc, V CE = Vdc, f = khz) 2N6426 hfe,000,000 CurrentGain High Frequency (I C = madc, V CE = Vdc, f = 0 MHz) 2N6426 Output Admittance (I C = madc, V CE = Vdc, f = khz) Noise Figure (I C = madc, V CE = Vdc, R S = 0 k, f = khz) 1. Pulse Test: Pulse Width 300 s; Duty Cycle %. h fe 1.5 1.3 2.4 2.4 h oe 00 mhos NF 3.0 db 2
2N6426, R S i n e n IDEAL TRANSISTOR Figure 1. Transistor Noise Model NOISE CHARACTERISTICS (V CE = Vdc, T A = 25 C) en, NOISE VOLTAGE (nv) 0 0 0 BANDWIDTH = Hz R S 0 0 0 0 1 k 2 k 5 k k k k 0 k f, FREQUENCY (Hz) 0 A I C = ma A in, NOISE CURRENT (pa) 0.7 0.3 BANDWIDTH = Hz I C = ma 0.07 0.05 0 A A 0.03 0.02 0 0 0 1 k 2 k 5 k k k k 0 k f, FREQUENCY (Hz) Figure 2. Noise Voltage Figure 3. Noise Current VT, TOTAL WIDEBAND NOISE VOLTAGE (nv) 0 0 70 30 BANDWIDTH = Hz TO 15.7 khz I C = A 0 A ma 0 0 0 00 R S, SOURCE RESISTANCE (k ) Figure 4. Total Wideband Noise Voltage NF, NOISE FIGURE (db) 14 BANDWIDTH = Hz TO 15.7 khz 12 A 8.0 0 A 6.0 4.0 I C = ma 0 0 0 0 00 R S, SOURCE RESISTANCE (k ) Figure 5. Wideband Noise Figure 3
2N6426, SMALLSIGNALCHARACTERISTICS C, CAPACITANCE (pf) 7.0 3.0 C ibo C obo hfe, SMALLSIGNAL CURRENT GAIN 4.0 0.8 0.6 0.4 V CE = V f = 0 MHz 0.04 0.4 4.0 40 V R, REVERSE VOLTAGE (VOLTS) Figure 6. Capacitance 0 0 0 Figure 7. High Frequency Current Gain hfe, DC CURRENT GAIN 0 k 0 k 70 k k 30 k k k 7.0 k k 3.0 k T J = 125 C 25 C 55 C k 7.0 30 70 0 0 300 0 Figure 8. DC Current Gain V CE = V VCE, COLLECTOREMITTER VOLTAGE (VOLTS) 3.0 2.5 I C = ma ma 2 ma 0 ma 1.5 0 0 0 00 I B, BASE CURRENT ( A) Figure 9. Collector Saturation Region V, VOLTAGE (VOLTS) 1.6 1.4 1.2 0.8 0.6 V BE(sat) @ I C /I B = 00 V BE(on) @ V CE = V V CE(sat) @ I C /I B = 00 7.0 30 70 0 0 300 0 R θ V, TEMPERATURE COEFFICIENTS (mv/ C) 3.0 4.0 *APPLIES FOR I C /I B h FE /3.0 *R VC FOR V CE(sat) VB FOR V BE 25 C TO 125 C 55 C TO 25 C 25 C TO 125 C 55 C TO 25 C 6.0 7.0 30 70 0 0 300 0 Figure. On Voltages Figure 11. Temperature Coefficients 4
2N6426, RESISTANCE (NORMALIZED) 0.7 0.3 0.07 0.05 0.03 0.02 D = 0.05 SINGLE PULSE SINGLE PULSE Z JC(t) = r(t) R JC МT J(pk) T C = P (pk) Z JC(t) Z JA(t) = r(t) R JA МT J(pk) T A = P (pk) Z JA(t) 0.01 0 0 0 k k k k t, TIME (ms) Figure 12. Thermal Response IC, COLLECTOR CURRENT (ma) k 700 0 300 0 0 70 30 0.4 T A = 25 C T C = 25 C CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT ms s 0 s 0.6 4.0 6.0 40 V CE, COLLECTOREMITTER VOLTAGE (VOLTS) t 1 FIGURE A P P t P 1/f DUTY CYCLE t1 f t 1 tp PEAK PULSE POWER = P P P P Figure 13. Active Region Safe Operating Area Design Note: Use of Transient Thermal Resistance Data ORDERING INFORMATION 2N6426G Device Package Shipping TO92 (PbFree) 5,000 Units / Bulk 2N6426RLRAG G TO92 (PbFree) TO92 (PbFree) 2,000 / Tape & Ammo 5,000 Units / Bulk RLRAG TO92 (PbFree) 2,000 / Tape & Ammo For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 5
2N6426, PACKAGE DIMENSIONS TO92 (TO226) CASE 2911 ISSUE AM R A N B STRAIGHT LEAD BULK PACK NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. P L SEATING INCHES MILLIMETERS PLANE K DIM MIN MAX MIN MAX A 75 05 4.45 5. B 70 4.32 5.33 C 25 65 3.18 4.19 D 0.016 0.021 0.407 33 X X D G 0.045 0.055 1.15 1.39 H 0.095 2.42 2.66 G J 0.015 0.0 0.39 0. H J K 0.0 12.70 V C L 6.35 N 0.080 4 2.66 P 0.0 2.54 SECTION XX R 15 2.93 1 N V 35 3.43 R T SEATING PLANE P G A X X V 1 B K C N BENT LEAD TAPE & REEL AMMO PACK D J SECTION XX NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. MILLIMETERS DIM MIN MAX A 4.45 5. B 4.32 5.33 C 3.18 4.19 D 0.40 4 G 2.40 2.80 J 0.39 0. K 12.70 N 4 2.66 P 1. 4.00 R 2.93 V 3.43 STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 3036752175 or 8003443860 Toll Free USA/Canada Fax: 3036752176 or 8003443867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 8002829855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 29 Japan Customer Focus Center Phone: 813577338 6 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative 2N6426/D