BC546B, BC547A, B, C, BC548B, C. Amplifier Transistors. NPN Silicon. Pb Free Packages are Available* Features. http://onsemi.com MAXIMUM RATINGS



Similar documents
BC546B, BC547A, B, C, BC548B, C. Amplifier Transistors. NPN Silicon. Pb Free Package is Available* Features. MAXIMUM RATINGS

BC337, BC337-25, BC Amplifier Transistors. NPN Silicon. These are Pb Free Devices. Features MAXIMUM RATINGS

BC327, BC327-16, BC327-25, BC Amplifier Transistors. PNP Silicon. These are Pb Free Devices* Features MAXIMUM RATINGS

MPSA92, MPSA93. High Voltage Transistors. PNP Silicon. Pb Free Packages are Available* Features. MAXIMUM RATINGS MARKING DIAGRAM

MPS2222, MPS2222A. NPN Silicon. Pb Free Packages are Available* Features MAXIMUM RATINGS MARKING DIAGRAMS THERMAL CHARACTERISTICS

2N4401. General Purpose Transistors. NPN Silicon. Pb Free Packages are Available* Features MAXIMUM RATINGS THERMAL CHARACTERISTICS

P2N2222ARL1G. Amplifier Transistors. NPN Silicon. These are Pb Free Devices* Features.

2N3906. General Purpose Transistors. PNP Silicon. Pb Free Packages are Available* Features MAXIMUM RATINGS

2N3903, 2N3904. General Purpose Transistors. NPN Silicon. Pb Free Packages are Available* Features. MAXIMUM RATINGS

2N3903, 2N3904. General Purpose Transistors. NPN Silicon. Features Pb Free Package May be Available. The G Suffix Denotes a Pb Free Lead Finish

2N2222A. Small Signal Switching Transistor. NPN Silicon. MIL PRF 19500/255 Qualified Available as JAN, JANTX, and JANTXV.

2N6387, 2N6388. Plastic Medium-Power Silicon Transistors DARLINGTON NPN SILICON POWER TRANSISTORS 8 AND 10 AMPERES 65 WATTS, VOLTS

Vdc. Vdc. Adc. W W/ C T J, T stg 65 to C

2N4921G, 2N4922G, 2N4923G. Medium-Power Plastic NPN Silicon Transistors 1.0 AMPERE GENERAL PURPOSE POWER TRANSISTORS VOLTS, 30 WATTS

TIP41, TIP41A, TIP41B, TIP41C (NPN); TIP42, TIP42A, TIP42B, TIP42C (PNP) Complementary Silicon Plastic Power Transistors

2N6056. NPN Darlington Silicon Power Transistor DARLINGTON 8 AMPERE SILICON POWER TRANSISTOR 80 VOLTS, 100 WATTS

TIP140, TIP141, TIP142, (NPN); TIP145, TIP146, TIP147, (PNP) Darlington Complementary Silicon Power Transistors

2N5460, 2N5461, 2N5462. JFET Amplifier. P Channel Depletion. Pb Free Packages are Available* Features. MAXIMUM RATINGS

MJD112 (NPN), MJD117 (PNP) Complementary Darlington Power Transistors. DPAK For Surface Mount Applications

MMBF4391LT1G, SMMBF4391LT1G, MMBF4392LT1G, MMBF4393LT1G. JFET Switching Transistors. N Channel

NUD4011. Low Current LED Driver

MMBZ52xxBLT1G Series, SZMMBZ52xxBLT3G. Zener Voltage Regulators. 225 mw SOT 23 Surface Mount

NTMS4920NR2G. Power MOSFET 30 V, 17 A, N Channel, SO 8 Features

MMSZxxxT1G Series, SZMMSZxxxT1G Series. Zener Voltage Regulators. 500 mw SOD 123 Surface Mount

1SMB59xxBT3G Series, SZ1SMB59xxT3G Series. 3 Watt Plastic Surface Mount Zener Voltage Regulators

MC14008B. 4-Bit Full Adder

NUD4001, NSVD4001. High Current LED Driver

1N59xxBRNG Series. 3 W DO-41 Surmetic 30 Zener Voltage Regulators

3EZ6.2D5 Series. 3 Watt DO-41 Surmetic 30 Zener Voltage Regulators

C106 Series. Sensitive Gate Silicon Controlled Rectifiers

MCR08B, MCR08M. Sensitive Gate Silicon Controlled Rectifiers. Reverse Blocking Thyristors. SCRs 0.8 AMPERES RMS 200 thru 600 VOLTS

MCR100 Series. Sensitive Gate Silicon Controlled Rectifiers. Reverse Blocking Thyristors. SCRs 0.8 A RMS 100 thru 600 V

LM A, Adjustable Output, Positive Voltage Regulator THREE TERMINAL ADJUSTABLE POSITIVE VOLTAGE REGULATOR

ESD9X3.3ST5G Series, SZESD9X3.3ST5G Series. Transient Voltage Suppressors Micro Packaged Diodes for ESD Protection

LC03-6R2G. Low Capacitance Surface Mount TVS for High-Speed Data Interfaces. SO-8 LOW CAPACITANCE VOLTAGE SUPPRESSOR 2 kw PEAK POWER 6 VOLTS

ESD Line Ultra-Large Bandwidth ESD Protection

1N4001, 1N4002, 1N4003, 1N4004, 1N4005, 1N4006, 1N4007. Axial Lead Standard Recovery Rectifiers

NE592 Video Amplifier

1N5820, 1N5821, 1N5822. Axial Lead Rectifiers SCHOTTKY BARRIER RECTIFIERS 3.0 AMPERES 20, 30, 40 VOLTS

BSP52T1 MEDIUM POWER NPN SILICON SURFACE MOUNT DARLINGTON TRANSISTOR

P D Operating Junction Temperature T J 200 C Storage Temperature Range T stg 65 to +150 C

1SMA5.0AT3G Series, SZ1SMA5.0AT3G Series. 400 Watt Peak Power Zener Transient Voltage Suppressors. Unidirectional

MC10SX1190. Fibre Channel Coaxial Cable Driver and Loop Resiliency Circuit

MC74AC138, MC74ACT of-8 Decoder/Demultiplexer

MC34063A, MC33063A, NCV33063A. 1.5 A, Step Up/Down/ Inverting Switching Regulators

CS V/250 ma, 5.0 V/100 ma Micropower Low Dropout Regulator with ENABLE

CAT4101TV. 1 A Constant-Current LED Driver with PWM Dimming

1.5SMC6.8AT3G Series, SZ1.5SMC6.8AT3G Series Watt Peak Power Zener Transient Voltage Suppressors. Unidirectional*

MC14175B/D. Quad Type D Flip-Flop

NSI45060JDT4G. Adjustable Constant Current Regulator & LED Driver. 45 V, ma 15%, 2.7 W Package

CS3341, CS3351, CS387. Alternator Voltage Regulator Darlington Driver

NCT65. Remote Trip Point Temperature Sensor with Overtemperature Shutdown

MC14001B Series. B Suffix Series CMOS Gates MC14001B, MC14011B, MC14023B, MC14025B, MC14071B, MC14073B, MC14081B, MC14082B

MC74HC132A. Quad 2-Input NAND Gate with Schmitt-Trigger Inputs. High Performance Silicon Gate CMOS

NS3L V, 8-Channel, 2:1 Gigabit Ethernet LAN Switch with LED Switch

NUP4106. Low Capacitance Surface Mount TVS for High-Speed Data Interfaces SO 8 LOW CAPACITANCE VOLTAGE SUPPRESSOR 500 WATTS PEAK POWER 3.

NUP2105L, SZNUP2105L. Dual Line CAN Bus Protector SOT 23 DUAL BIDIRECTIONAL VOLTAGE SUPPRESSOR 350 W PEAK POWER

PD Storage Temperature Range Tstg 65 to +150 C Junction Temperature TJ 200 C

CM1213A-04SO, SZCM1213A-04SO 4-Channel Low Capacitance ESD Protection Array

ULN2803A ULN2804A OCTAL PERIPHERAL DRIVER ARRAYS

40 V, 200 ma NPN switching transistor

LOW POWER SCHOTTKY. GUARANTEED OPERATING RANGES ORDERING INFORMATION

NPN Darlington Power Silicon Transistor Qualified per MIL-PRF-19500/472

MBR2045CT SCHOTTKY BARRIER RECTIFIER 20 AMPERES 45 VOLTS

DISCRETE SEMICONDUCTORS DATA SHEET BC856; BC857; BC858

LM317, NCV A Adjustable Output, Positive Voltage Regulator

NLX1G74. Single D Flip-Flop

TA = 25 C unless otherwise noted. Symbol Parameter Value Units

STF USB Filter with ESD Protection

45 V, 100 ma NPN/PNP general-purpose transistor

65 V, 100 ma PNP/PNP general-purpose transistor

LOW POWER NARROWBAND FM IF

BC846/BC546 series. 65 V, 100 ma NPN general-purpose transistors. NPN general-purpose transistors in Surface Mounted Device (SMD) plastic packages.

Spread Spectrum Clock Generator

PNP SMALL SIGNAL SILICON TRANSISTOR Qualified per MIL-PRF-19500/291

DISCRETE SEMICONDUCTORS DATA SHEET

LOW POWER SCHOTTKY. GUARANTEED OPERATING RANGES ORDERING INFORMATION PLASTIC N SUFFIX CASE 648 SOIC D SUFFIX CASE 751B

DATA SHEET. MMBT3904 NPN switching transistor DISCRETE SEMICONDUCTORS. Product data sheet Supersedes data of 2002 Oct Feb 03.

MC33039, NCV Closed Loop Brushless Motor Adapter

DATA SHEET. PBSS5540Z 40 V low V CEsat PNP transistor DISCRETE SEMICONDUCTORS. Product data sheet Supersedes data of 2001 Jan Sep 21.

BC807; BC807W; BC327

AND8365/D. 125 kbps with AMIS-4168x APPLICATION NOTE

AT Up to 6 GHz Low Noise Silicon Bipolar Transistor

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1020

Optocoupler, Phototransistor Output, with Base Connection

NPN wideband transistor in a SOT89 plastic package.

DATA SHEET. BC875; BC879 NPN Darlington transistors DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1999 May 28.

Optocoupler, Phototransistor Output, with Base Connection

CM2009. VGA Port Companion Circuit

BD239, BD239A, BD239B, BD239C NPN SILICON POWER TRANSISTORS

1SMB5.0AT3G Series, SZ1SMB5.0AT3G Series. 600 Watt Peak Power Zener Transient Voltage Suppressors. Unidirectional

BC847/BC547 series. 45 V, 100 ma NPN general-purpose transistors. NPN general-purpose transistors in small plastic packages.

Silicon NPN Phototransistor

MJB5742T4G. NPN Silicon Power Darlington Transistors POWER DARLINGTON TRANSISTORS 8 AMPERES, 400 VOLTS 100 WATTS

NLSX Bit 24 Mb/s Dual-Supply Level Translator

AND8433/D. Using ON Semiconductor Constant Current Regulator (CCR) Devices in AC Applications APPLICATION NOTE

Taping code. Reel size (mm) 2SCR513P MPT T ,000 NC

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC2383

45 V, 100 ma NPN general-purpose transistors

Optocoupler, Phototransistor Output, with Base Connection, 300 V BV CEO

Transcription:

B, A, B, C, B, C Amplifier Transistors NPN Silicon Features PbFree Packages are Available* COLLECTOR MAXIMUM RATINGS Collector - Emitter oltage Collector - Base oltage Rating Symbol alue Unit CEO 65 45 CBO 8 5 dc dc Emitter - Base oltage EBO dc Collector Current Continuous I C madc Total Device Dissipation @ Derate above 25 C Total Device Dissipation @ T C = 25 C Derate above 25 C Operating and Storage Junction Temperature Range THERMAL CHARACTERISTICS P D 625 5. P D.5 2 mw mw/ C W mw/ C T J, T stg 55 to + C Characteristic Symbol Max Unit Thermal Resistance, JunctiontoAmbient R JA C/W Thermal Resistance, JunctiontoCase R JC 83.3 C/W Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. TO92 CASE 29 STYLE 7 2 BASE 3 EMITTER 2 2 3 3 STRAIGHT LEAD BENT LEAD BULK PACK TAPE & REEL AMMO PACK MARKING DIAGRAM BC 54x AYWW x = 6, 7, or 8 A = Assembly Location Y = Year WW = Work Week = PbFree Package (Note: Microdot may be in either location) *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. Semiconductor Components Industries, LLC, 7 March, 7 Rev. 6 Publication Order Number: /D

B, A, B, C, B, C ELECTRICAL CHARACTERISTICS ( unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector Emitter Breakdown oltage (BR)CEO (I C = ma, I B = ) 65 45 Collector Base Breakdown oltage (I C = Adc) Emitter Base Breakdown oltage (I E = A, I C = ) Collector Cutoff Current ( CE = 7, BE = ) ( CE = 5, BE = ) ( CE = 35, BE = ) ( CE =, T A = 25 C) /547/548 ON CHARACTERISTICS DC Current Gain (I C = A, CE = 5. ) A C (BR)CBO 8 5 (BR)EBO I CES h FE 9 27 5 5 5 4. na A (I C = ma, CE = 5. ) A C/C 4 8 29 5 45 8 8 2 45 8 (I C = ma, CE = 5. ) A/548A C Collector Emitter Saturation oltage (I C = ma, I B =.5 ma) (I C = ma, I B = 5. ma) (I C = ma, I B = See Note ) Base Emitter Saturation oltage (I C = ma, I B =.5 ma) Base Emitter On oltage (I C = ma, CE = 5. ) (I C = ma, CE = 5. ) SMALLSIGNAL CHARACTERISTICS Current Gain Bandwidth Product (I C = ma, CE = 5., f = MHz) Output Capacitance ( CB =, I C =, f = MHz) Input Capacitance ( EB =.5, I C =, f = MHz) Small Signal Current Gain (I C = ma, CE = 5., f = khz) /548 A C/548C Noise Figure (I C = ma, CE = 5., R S = 2 k, f = khz, f = Hz). I B is value for which I C = ma at CE =. CE(sat) 8.9.3 5 BE(sat).7 BE(on).55 f T.7.77 MHz C obo.7 4.5 pf C ibo pf h fe 25 25 25 24 45 NF 2 3 6 5 9 26 5 9 db 2

B, A, B, C, B, C / hfe, NORMALIZED DC CURRENT GAIN.5.3 CE =, OLTAGE (OLTS).9.7.5.3. BE(sat) @ I C /I B = BE(on) @ CE = CE(sat) @ I C /I B =.5 5. 5 I C, COLLECTOR CURRENT (madc)..3.5.7 3. 5. 7. 5 7 I C, COLLECTOR CURRENT (madc) Figure. Normalized DC Current Gain Figure 2. Saturation and On oltages CE, COLLECTOREMITTER OLTAGE ().6.2 I C = ma I C = ma I C = 5 ma.2. I B, BASE CURRENT (ma) I C = ma I C = ma B, TEMPERATURE COEFFICIENT (m/ C) θ.2.6 2.4 2.8 55 C to +25 C Figure 3. Collector Saturation Region Figure 4. BaseEmitter Temperature Coefficient C, CAPACITANCE (pf) 7. 5. C ib 3. C ob 4. 8. 4 R, REERSE OLTAGE (OLTS) f, T CURRENTGAIN BANDWIDTH PRODUCT (MHz) 4 8 6 4.5.7 3. 5. 7. 5 I C, COLLECTOR CURRENT (madc) CE = Figure 5. Capacitances Figure 6. CurrentGain Bandwidth Product 3

B, A, B, C, B, C hfe, DC CURRENT GAIN (NORMALIZED).5 CE = 5, OLTAGE (OLTS) BE(sat) @ I C /I B = BE @ CE = 5. CE(sat) @ I C /I B =..5 5. 5 Figure 7. DC Current Gain Figure 8. On oltage CE, COLLECTOREMITTER OLTAGE (OLTS).6.2 ma I C = ma 5 ma ma.2.5..5 5. I B, BASE CURRENT (ma) ma B, TEMPERATURE COEFFICIENT (m/ C) θ.4.8 2.2 2.6 3. B for BE 55 C to 25 C.5 5. 5 Figure 9. Collector Saturation Region Figure. BaseEmitter Temperature Coefficient C, CAPACITANCE (pf) 4 C ib 4. C ob..5 5. 5 R, REERSE OLTAGE (OLTS) f, T CURRENTGAIN BANDWIDTH PRODUCT 5 5 CE = 5 5. 5 Figure. Capacitance Figure 2. CurrentGain Bandwidth Product 4

B, A, B, C, B, C ORDERING INFORMATION Device Package Shipping B TO92 BG TO92 (PbFree) BRL TO92 / Tape & Reel BRLG BZLG TO92 (PbFree) TO92 (PbFree) / Tape & Reel ARL TO92 / Tape & Reel ARLG AZLG BG BRLG BZLG CG CZLG BG BRLG BZLG CG TO92 (PbFree) TO92 (PbFree) TO92 (PbFree) TO92 (PbFree) TO92 (PbFree) TO92 (PbFree) TO92 (PbFree) TO92 (PbFree) TO92 (PbFree) TO92 (PbFree) TO92 (PbFree) / Tape & Reel / Tape & Reel / Tape & Reel CZLG TO92 (PbFree) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8/D. 5

B, A, B, C, B, C PACKAGE DIMENSIONS TO92 (TO226) CASE 29 ISSUE AM R A N B STRAIGHT LEAD BULK PACK NOTES:. DIMENSIONING AND TOLERANCING PER ANSI Y4.5M, 982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. P L SEATING INCHES MILLIMETERS PLANE K DIM MIN MAX MIN MAX A.75 5 4.45 5. B.7 4.32 5.33 C.25.65 3.8 4.9 D.6.2 7.533 X X D G.45.55.5.39 H.95.5 2.42 2.66 G J.5..39.5 H J K.5 2.7 C L 5 6.35 N.8.5 4 2.66 P. 2.54 SECTION XX R.5 2.93 N.35 3.43 R T SEATING PLANE P G A X X B K C N BENT LEAD TAPE & REEL AMMO PACK D J SECTION XX NOTES:. DIMENSIONING AND TOLERANCING PER ASME Y4.5M, 994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. MILLIMETERS DIM MIN MAX A 4.45 5. B 4.32 5.33 C 3.8 4.9 D.54 G 2.4 2.8 J.39.5 K 2.7 N 4 2.66 P.5 4. R 2.93 3.43 STYLE 7: PIN. COLLECTOR 2. BASE 3. EMITTER ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 563, Denver, Colorado 827 USA Phone: 3675275 or 8344386 Toll Free USA/Canada Fax: 3675276 or 83443867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 82829855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 42 33 79 29 Japan Customer Focus Center Phone: 835773385 6 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative /D