TOSHIBA Photocoupler GaAs Ired & Photo Transistor TLP85 Office Machine Programmable Controllers AC Adapter I/O Interface Board Unit: mm The TOSHIBA mini flat coupler TLP85 is a small outline coupler, suitable for surface mount assembly. TLP85 consist of a photo transistor optically coupled to a gallium arsenide infrared emitting diode. Since TLP85 is smaller than DIP package, it s suitable for high-density surface mounting applications such as programmable controllers Collector emitter voltage: 80V (min) Current transfer ratio: 50% (min) Rank GB: 0% (min) Isolation voltage: 3750Vrms (min) Operation Temperature:-55 to C Safety Standards UL approved: UL577, File No. E67349 cul approved: CSA Component Acceptance Service No. 5A File No.E67349 BSI approved: BS EN60065:02, Certificate No. 90 BS EN60950-:06, Certificate No. 902 Option (V4) type VDE approved: EN60747-5-2, Certificate No. 40009347 (Note): When a EN60747-5-2 approved type is needed, Please designate Option(V4) Construction mechanical rating Creepage distance : 5.0 mm(min) Clearance : 5.0 mm(min) Insulation thickness : 0.4 mm(min) TOSHIBA -4MS Weight: 0.08 g (Typ.) Pin Configuration(top view) 6 3 4 : Anode 3: Cathode 4: Emitter 6: Collector
Current Transfer Ratio Type Classification Note Current Transfer Ratio (%) (I C / I F ) I F = 5mA, V CE = 5V, Ta = 25 C Marking Of Classification Min Max TLP85 Blank 50 400 Blank, YE, GR, GB, Y+, G, G+, B Rank Y 50 50 YE Rank GR 0 300 GR Rank GB 0 400 GB Rank YH 75 50 Y+ Rank GRL 0 0 G Rank GRH 50 300 G+ Rank BLL 0 400 B (Note): Ex Rank GB: TLP85 (GB,E (Note) Application, type name for certification test, please use standard product type name, i, e. TLP85(GB,E: TLP85 2
Absolute Maximum Ratings (Ta = 25 C) Detector LED Characteristic Symbol Rating Unit Forward current I F 50 ma Forward current derating (Ta 90 C) ΔI F / C -.5 ma / C Pulse forward current (Note2) I FP A Reverse voltage V R 5 V Junction temperature T j 25 C Collector emitter voltage V CEO 80 V Emitter collector voltage V ECO 7 V Collector current I C 50 ma Collector power dissipation P C 50 mw Collector power dissipation derating (Ta 25 C) ΔP C / C -.5 mw / C Junction temperature T j 25 C Operating temperature range T opr 55 to C Storage temperature range T stg 55 to 25 C Lead soldering temperature T sol 260 (s) C Total package power dissipation P T 0 mw Total package power dissipation derating (Ta 25 C) ΔP T / C -2.0 mw / C Isolation voltage (AC, min., R.H. 60%) (Note 3) BV S 3750 V rms Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ( Handling Precautions / Derating Concept and Methods ) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 2: Pulse width 0 μs,f=0 Hz Note 3: Device considered a two terminal device: Pins and 3 shorted together and 4 and 6 shorted together. Recommended Operating Conditions (Note) Characteristic Symbol Min. Typ. Max. Unit Supply voltage V CC 5 48 V Forward current I F 6 ma Collector current I C ma Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the device. Additionally, each item is an independent guideline respectively. In developing designs using this product, please confirm specified characteristics shown in this document. 3
Individual Electrical Characteristics (Ta = 25 C) Characteristic Symbol Test Condition Min Typ. Max Unit Forward voltage V F I F = ma..25.4 V LED Reverse current I R V R = 5 V 5 μa Capacitance C T V = 0, f = MHz 30 pf Detector Collector emitter breakdown voltage Emitter collector breakdown voltage Collector dark current Capacitance (collector to emitter) V (BR) CEO I C = 0.5 ma 80 V V (BR) ECO I E = 0. ma 7 V I CEO V CE = 48 V 0.0 0.08 μa V CE = 48 V, Ta = 85 C 2 50 μa C CE V = 0, f = MHz pf Coupled Electrical Characteristics (Ta = 25 C) Characteristic Symbol Test Condition MIn Typ. Max Unit Current transfer ratio I C / I F I F = 5 ma, V CE = 5 V Rank GB Saturated CTR I C / I F (sat) IF = ma, V CE = 0.4 V Rank GB 50 400 0 400 60 30 % % Collector emitter saturation voltage V CE (sat) I C = 2.4 ma, I F = 8 ma 0.3 IC = 0.2 ma, I F = ma Rank GB 0.2 0.3 V Off state collector current I C (off) V F = 0.7V, V CE = 48 V μa Isolation Characteristics (Ta = 25 C) Characteristic Symbol Test Condition Min Typ. Max Unit Capacitance (input to output) C S V S = 0V, f = MHz 0.8 pf Isolation resistance R S V S = 500 V, R.H. 60% 2 4 Ω Isolation voltage BV S AC, minute 3750 AC, second, in oil 000 V rms DC, minute, in oil 000 V dc 4
Switching Characteristics (Ta = 25 C) Characteristic Symbol Test Condition Min Typ. Max Unit Rise time t r 5 Fall time t f V CC = V, I C = 2 ma 9 Turn on time t on R L = 0Ω 9 Turn off time t off 9 Turn on time t on 2 Storage time t s R L =.9 kω (Fig.) V CC = 5 V, I F = 6 ma 30 Turn off time t off 70 μs μs Fig. Switching time test circuit I F I F R L V CC V CE V CE ton t ON t S toff t OFF V CC 4.5V 0.5V 5
I F -Ta P C -Ta 0 60 Forward current I F (ma) 80 60 40 This curve shows the maximum limit to the forward current. 0-0 40 60 80 0 Collector power dissipation PC (mw) 40 0 80 60 40 This curve shows the maximum limit to the collector power dissipation. 0-0 40 60 80 0 Ambient temperature Ta ( C) Ambient temperature Ta ( C) I FP-DR I F -VF 3000 Pulse width 0μs 0 Pulse forward current IFP (ma) 00 500 300 0 50 30 Ta=25 C This curve shows the maximum limit to the pulse forward current. -3-2 - 0 Forward current IF (ma) C 85 C 50 C 25 C 0 C -25 C -55 C 0. 0.6 0.8.2.4.6.8 2 Duty cycle ratio D R Forward voltage V F (V) V F / Ta-I F I FP V FP -3.2 00 Forward voltage temperature coefficient ΔVF /ΔTa (mv/ C) -2.8-2.4-2 -.6 -.2-0.8-0.4 0. 0 Pulse forward current IFP (ma) 0 Pulse width μs Repetitive frequency=0hz Ta=25 C 0.6.4.8 2.2 2.6 3 3.4 Forward current I F (ma) Pulse forward voltage V FP (V) *The above graphs show typical characteristic. 6
I C -V CE I C -V CE 50 P C (max) Ta=25 C 30 Ta=25 C Collector current IC (ma) 40 30 50 30 5 I F =5mA Collector current IC (ma) 50 30 5 5 I F= 2mA 0 0 2 4 6 8 0 0 0.2 0.4 0.6 0.8 Collector-emitter voltage V CE (V) Collector-emitter voltage V CE (V) I C -IF ICEO-Ta 0 Ta=25 C Collector current IC (ma) VCE =V VCE =5V VCE =0.4V 0. 0. 0 Collector dark current ID (ICEO) (μa) 0. 0.0 0.00 VCE=48V 24V V 5V 0.000 0 40 60 80 0 Forward current I F (ma) Ambient temperature Ta ( C) I C/ I F -I F Current transfer ratio IC / IF (%) 00 0 VCE =V VCE =5V VCE=0.4V 0. 0 Forward current I F (ma) *The above graphs show typical characteristic. 7
V CE(sat) - Ta I C - Ta 0.28 0 Collector-Emitter saturation Voltage VCE(sat) (V) 0.24 0. 0.6 0.2 0.08 0.04 IF=8mA, IC=2.4mA IF=mA, IC=0.2mA 0.00-60 -40-0 40 60 80 0 Collector current IC (ma) 25 5 I F =0.5mA VCE=5V 0. -60-40 - 0 40 60 80 0 Ambient temperature Ta ( C) Ambient temperature Ta ( C) Switching time - R L Switching time - Ta 000 Ta=25 C IF=6mA VCC=5V 00 t off 00 t off 0 t s Switching time (μs) 0 t s Switching time (μs) t off t on 0 IF=6mA VCC=5V RL=.9kΩ 0. -60-40 - 0 40 60 80 0 Load resistance R L (kω) Ambient temperature Ta ( C) *The above graphs show typical characteristic. 8
Soldering and Storage. Soldering. Soldering When using a soldering iron or medium infrared ray/hot air reflow, avoid a rise in device temperature as much as possible by observing the following conditions. ) Using solder reflow Temperature profile example of lead (Pb) solder ( C) 240 Package surface temperature 2 60 40 This profile is based on the device s maximum heat resistance guaranteed value. Set the preheat temperature/heating temperature to the optimum temperature corresponding to the solder paste type used by the customer within the described profile. 60 to s less than 30s Time (s) Temperature profile example of using lead (Pb)-free solder Package surface temperature ( C) 260 230 90 80 This profile is based on the device s maximum heat resistance guaranteed value. Set the preheat temperature/heating temperature to the optimum temperature corresponding to the solder paste type used by the customer within the described profile. 60 to s 30 to 50s Time (s) 2) Using solder flow (for lead (Pb) solder, or lead (Pb)-free solder) Please preheat it at 50 C between 60 and seconds. Complete soldering within seconds below 260 C. Each pin may be heated at most once. 3) Using a soldering iron Complete soldering within seconds below 260 C, or within 3 seconds at 350 C. Each pin may be heated at most once. 9
2. Storage ) Avoid storage locations where devices may be exposed to moisture or direct sunlight. 2) Follow the precautions printed on the packing label of the device for transportation and storage. 3) Keep the storage location temperature and humidity within a range of 5 C to 35 C and 45% to 75%, respectively. 4) Do not store the products in locations with poisonous gases (especially corrosive gases) or in dusty conditions. 5) Store the products in locations with minimal temperature fluctuations. Rapid temperature changes during storage can cause condensation, resulting in lead oxidation or corrosion, which will deteriorate the solderability of the leads. 6) When restoring devices after removal from their packing, use anti-static containers. 7) Do not allow loads to be applied directly to devices while they are in storage. 8) If devices have been stored for more than two years under normal storage conditions, it is recommended that you check the leads for ease of soldering prior to use.
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