CoolMOS TM Power Transistor Features New revolutionary high voltage technology Intrinsic fast-recovery body diode Extremely low reverse recovery charge Ultra low gate charge Extreme dv /dt rated Product Summary V DS 6 V R DS(on),max.44 " ) I D A PG-TO22-3-3 High peak current capability Periodic avalanche rated Qualified for industrial grade applications according to JEDEC ) Type Package Ordering Code Marking SPAN6CFD TO-22-3-3 SP2637 N6CFD Maximum ratings, at T j =25 C, unless otherwise specified Parameter Symbol Conditions Value Unit Continuous drain current ) I D T C =25 C A T C = C Pulsed drain current 2) I D,pulse T C =25 C 7 28 Avalanche energy, single pulse E AS I D =5.5 A, V DD =5 V 34 mj Avalanche energy, repetitive 2),3) E AR I D = A, V DD =5 V.6 Avalanche current, repetitive 2),3) I AR A Drain source voltage slope dv /dt I D = A, V DS =48 V, T j =25 C Reverse diode dv /dt dv /dt I S = A, V DS =48 V, 4 V/ns Maximum diode commutation speed di /dt T j =25 C 6 A/µs Gate source voltage V GS static ±2 V 8 V/ns AC (f > Hz) ±3 Power dissipation P tot T C =25 C 33 W Operating and storage temperature T j, T stg -55... 5 C Rev..4 page 2-2-2
Parameter Symbol Conditions Values Unit min. typ. max. Thermal characteristics Thermal resistance, junction - case R thjc - - 3.8 K/W Thermal resistance, junction - ambient R thja leaded - - 62 Soldering temperature, wave solderingt sold.6 mm (.63 in.) from case for s - - 26 C Electrical characteristics, at T j =25 C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS = V, I D =25 µa 6 - - V Avalanche breakdown voltage V (BR)DS V GS = V, I D = A - 7 - Gate threshold voltage V GS(th) V DS =V GS, I D =.9 ma 3 4 5 Zero gate voltage drain current I DSS V DS =6 V, V GS = V, T j =25 C -. - µa V DS =6 V, V GS = V, T j =5 C - 9 - Gate-source leakage current I GSS V GS =2 V, V DS = V - - na Drain-source on-state resistance R DS(on) V GS = V, I D =7 A, T j =25 C -.38.44 " V GS = V, I D =7 A, T j =5 C -.2 - Gate resistance R G f = MHz, open drain -.86 - Transconductance g fs V DS >2 I D R DS(on)max, I D =7 A - 8.3 - S Rev..4 page 2 2-2-2
Parameter Symbol Conditions Values Unit min. typ. max. Dynamic characteristics Input capacitance C iss - 2 - pf V Output capacitance C GS = V, V DS =25 V, oss - 39 - f = MHz Reverse transfer capacitance C rss - 3 - Effective output capacitance, energy related 4) C o(er) V GS = V, V DS = V - 45 - to 48 V Effective output capacitance, time related 5) C o(tr) - 85 - Turn-on delay time t d(on) - 34 - ns Rise time t r V DD =48 V, V GS = V, I D = A, - 8 - Turn-off delay time t d(off) R G =6.8 " - 43 - Fall time t f - 7 - Gate Charge Characteristics Gate to source charge Q gs - 9 - nc Gate to drain charge Q gd V DD =48 V, I D = A, - 23 - Gate charge total Q g V GS = to V - 48 64 Gate plateau voltage V plateau - 7.5 - V ) J-STD2 and JESD22 ) Limited only by maximum temperature. 2) Pulse width t p limited by T j,max 3) Repetitive avalanche causes additional power losses that can be calculated asp AV =E AR *f. 4) C o(er) is a fixed capacitance that gives the same stored energy as C oss while V DS is rising from to 8% V DSS. 5) C o(tr) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from to 8% V DSS. Rev..4 page 3 2-2-2
Parameter Symbol Conditions Values Unit min. typ. max. Reverse Diode Diode continuous forward current ) I S - - A T C =25 C Diode pulse current 2) I S,pulse - - 28 Diode forward voltage V SD V GS = V, I F = A, T j =25 C -..2 V Reverse recovery time t rr - 4 - ns Reverse recovery charge Q rr V R =48 V, I F =I S, di F /dt = A/µs -.7 - µc Peak reverse recovery current I rrm - - A Typical Transient Thermal Characteristics Symbol Value Unit Symbol Value Unit typ. typ. R th.78 K/W C th.989 Ws/K R th2.93 C th2.939 R th3.228 C th3.33 R th4.559 C th4.245 R th5.58 C th5.95 Rev..4 page 4 2-2-2
Power dissipation 2 Safe operating area P tot =f(t C ) I D =f(v DS ); T C =25 C; D = parameter: t p 35 2 limited by on-state resistance 3 µs 25 µs P tot [W] 2 5 I D [A] ms µs ms DC 5 4 8 2 6-2 3 T C [ C] V DS [V] 3 Max. transient thermal impedance 4 Typ. output characteristics I D =f(v DS ); T j =25 C I D =f(v DS ); T j =25 C parameter: D=t p /T parameter: t p = µs V GS 35.5 3.2 25 2 V V. Z thjc [K/W] -.5.2. I D [A] 2 5 8 V -2 single pulse 7 V 5 6.5 V 6 V -3-6 -5-4 -3-2 - 5.5 V 5 V 5 5 2 t p [s] V DS [V] Rev..4 page 5 2-2-2
5 Typ. output characteristics 6 Typ. drain-source on-state resistance I D =f(v DS ); T j =5 C R DS(on) =f(i D ); T j =5 C SPAN6CFD parameter: t p = µs V GS 2 parameter: V GS 2.8 I D [A] 5 2 V V 8 V 7 V R DS(on) [ ].6.4.2.8 5 V 5.5 V 6 V 6.5 V 7 V V 2 V 5 6.5 V 6 V.6.4 5.5 V 5 V.2 5 5 2 V DS [V] 2 4 6 8 2 I D [A] 7 Drain-source on-state resistance 8 Typ. transfer characteristics R DS(on) =f(t j ); I D =7 A; V GS = V I D =f(v GS ); V DS >2 I D R DS(on)max parameter: T j.2 4 3 C 25.8 R DS(on) [ ].6 98 % typ I D [A] 2 C 5.4.2-6 -2 2 6 4 8 T j [ C] 2 4 6 8 2 V GS [V] Rev..4 page 6 2-2-2
9 Typ. gate charge Forward characteristics of reverse diode V GS =f(q gate ); I D = A pulsed I F =f(v SD ) parameter: V DD 2 parameter: T j 2 2 V 48 V 8 25 C 5 C, 98% 5 C V GS [V] 6 I F [A] 25 C, 98% 4 2 2 3 4 5 Q gate [nc] -.5.5 2 V SD [V] Avalanche SOA 2 Avalanche energy I AR =f(t AR ) E AS =f(t j ); I D =5.5 A; V DD =5 V parameter: T j(start) 9 8 35 3 25 7 I AV [A] 6 5 25 C 25 C E AS [mj] 2 5 4 3 2 5-3 -2 - t AR [µs] 2 3 4 2 6 4 8 T j [ C] Rev..4 page 7 2-2-2
3 Drain-source breakdown voltage 4 Typ. capacitances V BR(DSS) =f(t j ); I D = ma C =f(v DS ); V GS = V; f = MHz 7 4 Ciss 66 3 V BR(DSS) [V] 62 C [pf] 2 Coss 58 Crss 54-6 -2 2 6 4 8 T j [ C] 2 3 4 5 V DS [V] 5 Typ. C oss stored energy 6 Typ. reverse recovery charge E oss = f(v DS ) Q rr =f(t j );parameter: I D = A 8.2 7. 6 5 E oss [µj] 4 Q rr [µc].9 3.8 2.7 2 3 4 5 6 V DS [V].6 25 5 75 25 T j [ C] Rev..4 page 8 2-2-2
7 Typ. reverse recovery charge 8 Typ. reverse recovery charge Q rr =f(i S ); parameter: di/ dt = A/µs Q rr =f(di /dt ); parameter: I D = A.2.6.5 25 C.4.3.8.2 Q rr [µc].6 25 C Q rr [µc]. 25 C.9.4.8 25 C.7.2 3 5 7 9 I S [A].6 3 5 7 9 di/ dt [A/µs] Rev..4 page 9 2-2-2
Definition of diode switching characteristics Rev..4 page 2-2-2
PG-TO-22-3-3 (FullPAK) Rev..4 page 2-2-2
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