2.5 A Output Current IGBT and MOSFET Driver

Similar documents
1 Form A Solid State Relay

Optocoupler, Phototransistor Output, AC Input

Optocoupler, Phototransistor Output, with Base Connection, 300 V BV CEO

Optocoupler, Phototransistor Output, Dual Channel, SOIC-8 Package

1 Form A Solid State Relay

Photovoltaic MOSFET Driver with Integrated Fast Turn-Off, Solid-State Relay

Optocoupler, Phototransistor Output, 4 Pin LSOP, Long Creepage Mini-Flat Package

Optocoupler, Phototransistor Output, with Base Connection

Optocoupler, Phototransistor Output, with Base Connection

Optocoupler, Phototransistor Output, High Reliability, 5300 V RMS, Low Input Current

Optocoupler, Photodarlington Output, Dual Channel, SOIC-8 Package

Optocoupler, Phototransistor Output, with Base Connection in SOIC-8 Package

Optocoupler, Phototransistor Output, with Base Connection

Small Signal Fast Switching Diode

Aluminum Electrolytic Capacitors Axial Miniature, Long-Life

Silicon PIN Photodiode

Small Signal Fast Switching Diode FEATURES PART ORDERING CODE INTERNAL CONSTRUCTION TYPE MARKING REMARKS

Aluminum Electrolytic Capacitors Power Economic Printed Wiring

Aluminum Electrolytic Capacitors Power Eurodin Printed Wiring

Silicon PIN Photodiode

Preamplifier Circuit for IR Remote Control

IR Receiver Module for Light Barrier Systems

Silicon NPN Phototransistor

High Speed Infrared Emitting Diode, 940 nm, GaAlAs, MQW

High Power Infrared Emitting Diode, 940 nm, GaAlAs, MQW

Optocoupler, Phototransistor Output, with Base Connection

Silicon PIN Photodiode

High Performance Schottky Rectifier, 3.0 A

High Performance Schottky Rectifier, 1.0 A

Schottky Rectifier, 1.0 A

P-Channel 20 V (D-S) MOSFET

Aluminum Electrolytic Capacitors Radial Miniature, Low Impedance, High Vibration Capability

P6KE6.8A thru P6KE540A. TRANSZORB Transient Voltage Suppressors. Vishay General Semiconductor. FEATURES PRIMARY CHARACTERISTICS

Ambient Light Sensor

Power MOSFET FEATURES. IRFZ44PbF SiHFZ44-E3 IRFZ44 SiHFZ44 T C = 25 C

Power MOSFET. IRF510PbF SiHF510-E3 IRF510 SiHF510. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 100 V Gate-Source Voltage V GS ± 20

High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero

High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs

Power MOSFET FEATURES. IRL540PbF SiHL540-E3 IRL540 SiHL540

Optocoupler, Phototransistor Output (Dual, Quad Channel)

Power MOSFET FEATURES. IRF610PbF SiHF610-E3 IRF610 SiHF610. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 200 V Gate-Source Voltage V GS ± 20

High Performance Schottky Rectifier, 1 A

Aluminum Capacitors Solid Axial

Reflective Optical Sensor with Transistor Output

Surface Mount Multilayer Ceramic Chip Capacitor Solutions for High Voltage Applications

Power MOSFET FEATURES. IRF740PbF SiHF740-E3 IRF740 SiHF740. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 400 V Gate-Source Voltage V GS ± 20

Electrical Double Layer Energy Storage Capacitors Power and Energy Versions

Reflective Optical Sensor with Transistor Output

Schottky Rectifier, 1.0 A

Ultrabright White LED, Ø 3 mm

HIGH SPEED-10 MBit/s LOGIC GATE OPTOCOUPLERS

Data Sheet. ACPL-077L Low Power 3.3 V / 5 V High Speed CMOS Optocoupler Design for System Level Reliability. Description. Features. Functional Diagram

P-Channel 20-V (D-S) MOSFET

IR Sensor Module for Reflective Sensor, Light Barrier, and Fast Proximity Applications

Data Sheet. ACPL-M21L, ACPL-021L, ACPL-024L, ACPL-W21L and ACPL-K24L Low Power, 5 MBd Digital CMOS Optocoupler. Description.

SMD Aluminum Solid Capacitors with Conductive Polymer

Power Resistor Thick Film Technology

N-Channel 100 V (D-S) MOSFET

5 V, 1 A H-Bridge Motor Driver

50 W Power Resistor, Thick Film Technology, TO-220

AC and Pulse Film Foil Capacitors KP Radial Potted Type

28 V, 56 m, Load Switch with Programmable Current Limit and Slew Rate Control

AC Line Rated Ceramic Disc Capacitors Class X1, 760 V AC, Class Y1, 500 V AC

1.5KE6.8A thru 1.5KE540A, 1N6267A thru 1N6303A. TRANSZORB Transient Voltage Suppressors. Vishay General Semiconductor.

P-Channel 60 V (D-S) MOSFET

P-Channel 1.25-W, 1.8-V (G-S) MOSFET

UV SMD LED PLCC-2 FEATURES APPLICATIONS. at I F (ma) (ma) MIN. TYP. MAX. MIN. TYP. MAX. MIN. TYP. MAX.

Power MOSFET FEATURES. IRF540PbF SiHF540-E3 IRF540 SiHF540. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 100 V Gate-Source Voltage V GS ± 20

Features. Applications. Truth Table. Close

Schottky Rectifier, 100 A

ACPL-P343 and ACPL-W Amp Output Current IGBT Gate Drive Optocoupler with Rail-to-Rail Output Voltage in Stretched SO6. Features.

Optocoupler, Phototransistor Output, With Base Connection

Power MOSFET FEATURES. IRF9640PbF SiHF9640-E3 IRF9640 SiHF9640

S112-XHS. Description. Features. Agency Approvals. Applications. Absolute Maximum Ratings. Schematic Diagram. Ordering Information

SuperTan Extended (STE) Capacitors, Wet Tantalum Capacitors with Hermetic Seal

Thick Film Resistor Networks, Dual-In-Line, Molded DIP

Pulse Proof Thick Film Chip Resistors

Automotive P-Channel 60 V (D-S) 175 C MOSFET

Low Current SMD LED PLCC-2

Standard 0603 SMD LED

HCPL-2201, HCPL-2202, HCPL-2211, HCPL-2212, HCPL-2231, HCPL-2232, HCPL-0201, HCPL-0211, HCNW2201, HCNW2211. Logic Gate Optocouplers.

High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs

40 V, 200 ma NPN switching transistor

Preamplifier Circuit for IR Remote Control

Knob Potentiometer with Switch

Knob Potentiometer FEATURES. P16NP P16NM Panel Cutout. Thickness nut 2 mm washer 1.5 mm. Panel sealing ring 12 wrench Thread M10 x

Power Resistor for Mounting onto a Heatsink Thick Film Technology

SMD PTC - Nickel Thin Film Linear Thermistors

Pulse Proof, High Power Thick Film Chip Resistors

DG2302. High-Speed, Low r ON, SPST Analog Switch. Vishay Siliconix. (1-Bit Bus Switch with Level-Shifter) RoHS* COMPLIANT DESCRIPTION FEATURES

Power MOSFET FEATURES. IRF740PbF SiHF740-E3 IRF740 SiHF740. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 400 V Gate-Source Voltage V GS ± 20

Linear Optocoupler, High Gain Stability, Wide Bandwidth

Precision Surface Mount Resistors Wirewound or Metal Film Technologies

Standard Thick Film Chip Resistors

High-Speed, Low r ON, SPST Analog Switch (1-Bit Bus Switch)

Preamplifier Circuit for IR Remote Control

Power MOSFET FEATURES. IRF520PbF SiHF520-E3 IRF520 SiHF520. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 100 V Gate-Source Voltage V GS ± 20

Audio Jack Detector with Send / End Detect

Transcription:

VO. A Output Current IGBT and MOSFET Driver 9 DESCRIPTION NC A C NC _ The VO consists of a LED optically coupled to an integrated circuit with a power output stage. This optocoupler is ideally suited for driving power IGBTs and MOSFETs used in motor control inverter applications. The high operating voltage range of the output stage provides the drive voltages required by gate controlled devices. The voltage and current supplied by this optocoupler makes it ideally suited for directly driving IGBTs with ratings up to V/ A. For IGBTs with higher ratings, the VO can be used to drive a discrete power stage which drives the IGBT gate. Shield V D E V CC V EE FEATURES. A minimum peak output current kv/μs minimum common mode rejection (CMR) at V CM = V I CC =. ma maximum supply current Under voltage lock-out (UVLO) with hysteresis Wide operating V CC range: V to V. μs maximum pulse width distortion Industrial temperature range: - C to C. V maximum low level output voltage (L ) Reinforced insulation rated per DIN EN -- Material categorization: For definitions of compliance please see www.vishay.com/doc?999 APPLICATIONS Isolated IGBT/MOSFET gate driver AC and brushless DC motor drives Induction stove top Industrial inverters Switch mode power supplies (SMPS) Uninterruptible power supplies (UPS) AGENCY APPROVALS UL - file no. E system code H, double protection cul - file no. E, equivalent to CSA bulletin A DIN EN -- (VDE ) and reinforced insulation rating available with option ORDERING INFORMATION x - X # # T DIP- PART NUMBER PACKAGE OPTION TAPE AND REEL. mm Option Option 9 >. mm >. mm PACKAGE UL, cul UL, cul, VDE DIP-, tubes VO VO-X SMD-, option, tape and reel VO-XT - SMD-, option 9, tape and reel - VO-X9T Rev.., 9-Oct- Document Number: ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9

VO TRUTH TABLE LED V CC - V EE POSITIVE GOING (TURN ON) V CC - V EE NEGATIVE GOING (TURN OFF) Off V to V V to V Low On V to V V to 9. V Low On V to. V 9. V to V Transition On. V to V V to V High V ABSOLUTE MAXIMUM RATINGS (T amb = C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT INPUT Input forward current I F ma Peak transient input current < μs pulse width, pps I F(TRAN) A Reverse input voltage V R V Output power dissipation P diss mw OUTPUT High peak output current () I OH(PEAK). A Low peak output current () I OL(PEAK). A Supply voltage (V CC - V EE ) to V Output voltage (PEAK) to V CC V Output power dissipation P diss mw OPTOCOUPLER Isolation test voltage (between emitter and detector) t = s V ISO V RMS Storage temperature range T S - to C Ambient operating temperature range T A - to C Total power dissipation P tot 9 mw Lead solder temperature () For s,. mm below seating plane C Notes Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability. () Maximum pulse width = μs, maximum duty cycle =. %. This value is intended to allow for component tolerances for designs with I O peak minimum =. A. See applications section for additional details on limiting I OH peak. () Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through hole devices (DIP). RECOMMENDED OPERATING CONDITION PARAMETER SYMBOL MIN. MAX. UNIT Power supply voltage V CC - V EE V Input LED current (on) I F ma Input voltage (off) V F(OFF) -. V Operating temperature T amb - C Rev.., 9-Oct- Document Number: ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9

VO THERMAL CHARACTERISTICS PARAMETER SYMBOL VALUE UNIT LED power dissipation P diss mw Output power dissipation P diss mw Total power dissipation P tot mw Maximum LED junction temperature T jmax. C Maximum output die junction temperature T jmax. C Thermal resistance, junction emitter to board θ JEB 9 C/W Thermal resistance, junction emitter to case θ JEC 9 C/W Thermal resistance, junction detector to board θ JDB C/W Thermal resistance, junction detector to case θ JDC C/W Thermal resistance, junction emitter to junction detector θ JED C/W Thermal resistance, case to ambient θ CA C/W Note The thermal characteristics table above were measured at C and the thermal model is represented in the thermal network below. Each resistance value given in this model can be used to calculate the temperatures at each node for a given operating condition. The thermal resistance from board to ambient will be dependent on the type of PCB, layout and thickness of copper traces. For a detailed explanation of the thermal model, please reference Vishay s Thermal Characteristics of Optocouplers application note. T JD 999 θ DB θ DC T A T C T B θ DE θ CA θ BA T A Package θ EC θ EB T JE ELECTRICAL CHARACTERISTICS PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT High level output current = (V CC - V) I () OH. A = (V CC - V) I () OH. A Low level output current = (V EE. V) I () OL. A = (V EE V) I () OL. A High level output voltage I O = - ma V () OH V CC - V Low level output voltage I O = ma L.. V High level supply current Output open, I F = ma to ma I CCH. ma Low level supply current Output open, V F = - V to. V I CCL. ma Threshold input current low to high I O = ma, > V I FLH ma Threshold input voltage high to low V FHL. V Input forward voltage I F = ma V F. V Temperature coefficient of forward voltage I F = ma ΔV F /ΔT A -. mv/ C Input reverse breakdown voltage I R = μa BV R V Input capacitance f = MHz, V F = V C IN pf V V UVLO. V UVLO threshold I F = ma V UVLO - 9. V UVLO hysteresis UVLO HYS. V Notes Minimum and maximum values were tested over recommended operating conditions (T A = - C to C, I F(ON) = ma to ma, V F(OFF) = - V to. V, V CC = V to V, V EE = ground) unless otherwise specified. Typical values are characteristics of the device and are the result of engineering evaluations. Typical values are for information only and are not part of the testing requirements. All typical values were measured at T amb = C and with V CC - V EE = V. () Maximum pulse width = μs, maximum duty cycle =. %. () Maximum pulse width = μs, maximum duty cycle =. %. This value is intended to allow for component tolerances for designs with I O peak minimum =. A. () In this test H is measured with a dc load current. When driving capacitive loads H will approach V CC as I OH approaches zero A. Maximum pulse width = ms, maximum duty cycle = %. Rev.., 9-Oct- Document Number: ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9

VO TEST CIRCUITS I F = ma to ma. µf I OH V V CC = V to V. µf L ma V CC = V to V 9-9- Fig. - I OH Test Circuit Fig. - L Test Circuit. µf. V I OL V CC = V to V I F. µf V > V CC= V to V 9-9- Fig. - I OL Test Circuit Fig. - I FLH Test Circuit. µf. µf I V = V F = ma CC to ma to V H ma IF = ma > V V CC 9-9 Fig. - H Test Circuit Fig. - UVLO Test Circuit SWITCHING CHARACTERISTICS PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Propagation delay time to logic low output () R g = Ω, C g = nf, f = khz, duty cycle = %.. μs Propagation delay time to logic high output () R g = Ω, C g = nf, f = khz, duty cycle = %.. μs Pulse width distortion () R g = Ω, C g = nf, f = khz, duty cycle = % PWD. μs Rise time R g = Ω, C g = nf, f = khz, duty cycle = % t r. μs Fall time R g = Ω, C g = nf, f = khz, duty cycle = % t f. μs UVLO turn on delay > V, I F = ma T UVLO-ON. μs UVLO turn off delay < V, I F = ma T UVLO-OFF. μs Notes () This load condition approximates the gate load of a V/ A IGBT. () Pulse width distortion (PWD) is defined as - for any given device. () The difference between and between any two VO parts under the same test condition. Rev.., 9-Oct- Document Number: ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9

VO khz % Duty Cycle I = ma to ma F Ω. µf Ω nf V CC = V to V I F OUT t r t f 9 % % % 99- Fig. -,, t r and t f Test Circuit and Waveforms COMMON MODE TRANSIENT IMMUNITY PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Common mode transient immunity at logic high output ()() T A = C, I F = ma to ma, V CM = V, V CC = V Common mode transient immunity at T A = C, V CM = V, logic low output ()() V CC = V, V F = V CM H kv/μs CM L kv/μs Notes () Pins and need to be connected to LED common. () Common mode transient immunity in the high state is the maximum tolerable dv CM /dt of the common mode pulse, V CM, to assure that the output will remain in the high state (i.e., > V). () Common mode transient immunity in a low state is the maximum tolerable dv CM /dt of the common mode pulse, V CM, to assure that the output will remain in a low state (i.e., < V). V dv V = CM I dt Δt F. μf A R V Δt V CC = V H Switch at A: I F = ma L Switch at B: I F = ma 9- V CM = V Fig. - CMR Test Circuit and Waveforms Rev.., 9-Oct- Document Number: ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9

VO SAFETY AND INSULATION RATINGS PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Climatic classification (according to IEC part ) // Comparative tracking index CTI 99 Peak transient overvoltage V IOTM V Peak insulation voltage V IORM 9 V Safety rating - power output P SO mm Safety rating - input current I SI mm Safety rating - temperature T SI C Creepage distance Standard DIP- mm Clearance distance Standard DIP- mm Creepage distance mil DIP- mm Clearance distance mil DIP- mm Note As per IEC --,..., this optocoupler is reinforced rated and suitable for safe electrical insulation only within the safety ratings. Compliance with the safety ratings shall be ensured by means of protective circuits. TYPICAL CHARACTERISTICS (T amb = C, unless otherwise specified) H - VCC - High Output Voltage Drop (V). -. -. -. -. -. -. - - I F = ma I OUT = - ma V CC = V V EE = V Fig. 9 - High Output Voltage Drop vs. Temperature L - Output Low Voltage (V)........ - - V F =. V I OUT = ma V CC = V V EE = V Fig. - Output Low Voltage vs. Temperature I OH - High Output Current (A) I F = ma V out = (V CC - ) V V CC = V V EE = V - - Fig. - High Output Current vs. Temperature I OL - Output Low Current (A)... I F = ma V out =. V V CC = V V EE = V. - - Fig. - Output Low Current vs. Temperature Rev.., 9-Oct- Document Number: ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9

VO L - Output Low Voltage (V) I F = ma V CC = V V EE = V C - C....... I OL - Output Low Current (A) C Fig. - Output Low Voltage vs. Output Low Current I CC - Supply Current (ma)..... I F = ma for I CCH I F = ma for I CCL T A = C V EE = V I CCH I CCL. V CC - Supply Voltage (V) Fig. - Supply Current vs. Supply Voltage (H - V CC ) Output High Voltage Drop (V) 9 - - - - - C - C I F = ma V CC = V V EE = V C -... I OH - Output High Current (A) Fig. - Output High Voltage Drop vs. Output High Current I FLH - Low to High Current Threshold (ma).. V CC = V. V EE = V Output = open........ - - Fig. - Low to High Current Threshold vs. Temperature I CC - Supply Current (ma).... I F = ma for I CCH. I F = ma for I CCL V CC = V I CCL V EE = V - - I CCH Fig. - Supply Current vs. Temperature - Output Voltage (V) T A = C I F - Forward LED Current (ma) Fig. - Transfer Characteristics Rev.., 9-Oct- Document Number: ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9

VO t p - Propagation Delay (ns) I F = ma, T A = C R g = Ω, C g = nf Duty cycle = % f = khz t p - Propagation Delay (ns) V CC = V, V EE = V I F = ma, T A = C C g = nf Duty cycle = % f = khz V CC - Supply Voltage (V) Fig. 9 - Propagation Delay vs. Supply Voltage R g - Series Load Resistance (Ω) Fig. - Propagation Delay vs. Series Load Resistance t p - Propagation Delay (ns) V CC = V, V EE = V I F = ma R g = Ω, C g = nf Duty cycle = % f = khz t p - Propagation Delay (ns) V CC = V, V EE = V I F = ma, T A = C R g = Ω Duty cycle = % f = khz - - T A - Fig. - Propagation Delay vs. Temperature C g - Series Load Capacitance (nf) Fig. - Propagation Delay vs. Series Load Capacitance t p - Propagation Delay (ns) V CC = V, V EE = V T A = C R g = Ω, C g = nf Duty cycle = % f = khz I F - Forward LED Current (ma) Fig. - Propagation Delay vs. Forward LED Current Rev.., 9-Oct- Document Number: ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9

VO PACKAGE DIMENSIONS in millimeters Pin one ID. ±. ISOmethodA 9. ±..9 ±.9 typ..9. typ.. ±..9 ±... ±.. ±.9 to 9. ±.. typ.. ±. Option Option 9 i. typ.. max.. typ.. min.. ±.. ±.. ±. min.. min.. max.. min. min.... R... R.. - min... min... PACKAGE MARKING VO X V YWW H Notes The VDE logo is only marked on option parts. Tape and reel suffix (T) is not part of the package marking. Rev.., 9-Oct- 9 Document Number: ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9

Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, Vishay ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer s technical experts. Product specifications do not expand or otherwise modify Vishay s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Revision: -Jun- Document Number: 9