Heterojunction Bipolar Transistor Technology (InGaP HBT) Broadband High Linearity Amplifier



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Freescale Semiconductor Technical Data Heterojunction Bipolar Transistor Technology (InGaP HBT) Broadband High Linearity Amplifier The is a general purpose amplifier that is input and output internally prematched. It is designed for a broad range of Class A, small--signal, high linearity, general purpose applications. It is suitable for applications with frequencies from 4 to 4 MHz such as cellular, PCS, BWA, WLL, PHS, CATV, VHF, UHF, UMTS and general small--signal RF. Features Frequency: 4--4 MHz P1dB: 25 dbm @ 9 MHz Small--Signal Gain: 19.5 db @ 9 MHz Third Order Output Intercept Point: 4.5 dbm @ 9 MHz Single 5 V Supply Active Bias Cost--effective SOT--89 Surface Mount Plastic Package In Tape and Reel. T1 Suffix = 1, Units, 12 mm Tape Width, 7--inch Reel. Document Number: Rev. 5, 3/216 4-4 MHz, 19.5 db 25 dbm InGaP HBT GPA SOT -89 Table 1. Typical Performance (1) Characteristic Small--Signal Gain (S21) Input Return Loss (S11) Output Return Loss (S22) Symbol 9 MHz 214 MHz 35 MHz Unit G p 19.5 15 1 db IRL -- 25 -- 12 -- 8 db ORL -- 11 --13 -- 19 db Table 2. Maximum Ratings Rating Symbol Value Unit Supply Voltage V CC 6 V Supply Current I CC 3 ma RF Input Power P in 25 dbm Storage Temperature Range T stg --65 to +15 C Junction Temperature T J 175 C Power Output @1dB Compression Third Order Output Intercept Point P1dB 25 25.8 25 dbm OIP3 4.5 4.5 4 dbm 1.,T A =25 C, 5 ohm system, application circuit tuned for specified frequency. Table 3. Thermal Characteristics Thermal Resistance, Junction to Case Case Temperature 81 C, 5 Vdc, 135 ma, no RF applied Characteristic Symbol Value (2) Unit R JC 27.4 C/W 2. Refer to AN1955,Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.nxp.com/rf and search for AN1955., 28, 211, 214, 216. All rights reserved. 1

Table 4. Electrical Characteristics (V CC = 5 Vdc, 9 MHz, T A =25 C, 5 ohm system, in Freescale Application Circuit) Characteristic Symbol Min Typ Max Unit Small--Signal Gain (S21) G p 18.5 19.5 db Input Return Loss (S11) IRL -- 25 db Output Return Loss (S22) ORL -- 11 db Power Output @ 1dB Compression P1dB 25 dbm Third Order Output Intercept Point OIP3 4.5 dbm Noise Figure NF 5.7 db Supply Current I CC 11 135 16 ma Supply Voltage V CC 5 V Table 5. Functional Pin Description Pin Number Pin Function 2 1 RF in 2 Ground 3 RF out /DC Supply 1 2 3 Figure 1. Functional Diagram Table 6. ESD Protection Characteristics Test Conditions/Test Methodology Class Human Body Model (per JESD22--A114) 1B Machine Model (per EIA/JESD22--A115) A Charge Device Model (per JESD22--C11) IV Table 7. Moisture Sensitivity Level Test Methodology Rating Package Peak Temperature Unit Per JESD22--A113, IPC/JEDEC J--STD--2 1 26 C 2

5 OHM TYPICAL CHARACTERISTICS 25 G p, SMALL--SIGNAL GAIN (db) 2 15 1 T C =--4 C 25 C S11, S22 (db) --5 S11 S22 85 C 5 1 2 3 4 f, FREQUENCY (GHz) --1 1 2 3 f, FREQUENCY (GHz) 4 Figure 2. Small -Signal Gain (S21) versus Frequency Figure 3. Input/Output Return Loss versus Frequency G p, SMALL--SIGNAL GAIN (db) 23 21 19 17 15 13 11 9 6 9 MHz 196 MHz 214 MHz 26 MHz 35 MHz 1 14 18 22 26 P1dB, 1 db COMPRESSION POINT (dbm) 26 25 24.5 1 1.5 2 2.5 3 3.5 P out, OUTPUT POWER (dbm) Figure 4. Small -Signal Gain versus Output Power f, FREQUENCY (GHz) Figure 5. P1dB versus Frequency I CC, COLLECTOR CURRENT (ma) 2 18 16 14 12 1 8 6 4 2 38 1 2 3 4 5 6 1 2 3 4 V CC, COLLECTOR VOLTAGE (V) f, FREQUENCY (GHz) Figure 6. Collector Current versus Collector Voltage OIP3, THIRD ORDER OUTPUT INTERCEPT POINT (dbm) 42 4 1 MHz Tone Spacing Figure 7. Third Order Output Intercept Point versus Frequency 3

5 OHM TYPICAL CHARACTERISTICS OIP3, THIRD ORDER OUTPUT INTERCEPT POINT (dbm) 42 4 38 4.5 f = 9 MHz 1 MHz Tone Spacing 4.7 4.9 5.1 5.3 5.5 V CC, COLLECTOR VOLTAGE (V) OIP3, THIRD ORDER OUTPUT INTERCEPT POINT (dbm) 42 4 f = 9 MHz 1 MHz Tone Spacing 38 --4 --2 2 4 6 8 T, TEMPERATURE (_C) 1 Figure 8. Third Order Output Intercept Point versus Collector Voltage Figure 9. Third Order Output Intercept Point versus Case Temperature --3 1 5 IMD, THIRD ORDER INTERMODULATION DISTORTION (dbc) --4 --5 --6 V --7 CC =5Vdc f = 9 MHz 1 MHz Tone Spacing --8 1 13 16 19 22 25 P out, OUTPUT POWER (dbm) MTTF (YEARS) 1 4 1 3 12 125 13 135 14 145 T J, JUNCTION TEMPERATURE ( C) 15 Figure 1. Third Order Intermodulation versus Output Power NOTE: The MTTF is calculated with,i CC = 135 ma Figure 11. MTTF versus Junction Temperature NF, NOISE FIGURE (db) 1 8 6 4 2 1 2 3 4 ACPR, ADJACENT CHANNEL POWER RATIO (dbc) --2 --3 --4 --5 --6 V CC = 5 Vdc, f = 214 MHz Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth Input Signal PAR = 8.5 db @.1% Probability on CCDF --7 1 13 16 19 22 25 f, FREQUENCY (GHz) Figure 12. Noise Figure versus Frequency P out, OUTPUT POWER (dbm) Figure 13. Single -Carrier W -CDMA Adjacent Channel Power Ratio versus Output Power 4

5 OHM APPLICATION CIRCUIT: 8-1 MHz V SUPPLY R1 RF INPUT Z1 Z2 Z3 Z4 DUT Z5 L1 Z6 C3 Z7 C4 Z8 RF OUTPUT C1 V CC C2 C5 C6 C7 Z1, Z8.274 x.58 Microstrip Z2, Z7.73 x.58 Microstrip Z3.66 x.58 Microstrip Z4.59 x.58 Microstrip Z5.172 x.58 Microstrip Z6.43 x.58 Microstrip PCB Getek Grade ML2C,.31, r =4.1 Figure 14. 5 Ohm Test Circuit Schematic S21, S11, S22 (db) 3 2 1 --1 --2 --3 --4 7 S21 S11 S22 8 9 1 11 f, FREQUENCY (MHz) Figure 15. S21, S11 and S22 versus Frequency C5 C1 C6 MMG3XX Rev 2 Figure 16. 5 Ohm Test Circuit Component Layout R1 C4 C3 L1 C2 C7 Table 8. 5 Ohm Test Circuit Component Designations and Values Part Description Part Number Manufacturer C1, C2 22 pf Chip Capacitors C85C221J5GAC Kemet C3.1 F Chip Capacitor C63C14J5RAC Kemet C4 2.2 F Chip Capacitor C85C225J4RAC Kemet C5.2 pf Chip Capacitor 1265JR2BS AVX C6 4.7 pf Chip Capacitor C63C479J5GAC Kemet C7 1.8 pf Chip Capacitor C126C189D5GAC Kemet L1 1 nh Chip Inductor HK1681NJ--T Taiyo Yuden R1 Chip Resistor ERJ3GEYRV Panasonic 5

5 OHM APPLICATION CIRCUIT: 18-22 MHz V SUPPLY R1 RF INPUT Z1 Z2 Z3 DUT Z4 L1 Z5 C3 Z6 C4 Z7 RF OUTPUT C1 V CC C2 C5 C6 Z1, Z7.347 x.58 Microstrip Z2.399 x.58 Microstrip Z3.176 x.58 Microstrip Z4.172 x.58 Microstrip Z5.162 x.58 Microstrip Z6.241 x.58 Microstrip PCB Getek Grade ML2C,.31, r =4.1 Figure 17. 5 Ohm Test Circuit Schematic 2 S21 1 R1 S21, S11, S22 (db) --1 S11 C1 C5 C4 C3 L1 C6 C2 --2 16 S22 18 2 22 24 f, FREQUENCY (MHz) Figure 18. S21, S11 and S22 versus Frequency MMG3XX Rev 2 Figure 19. 5 Ohm Test Circuit Component Layout Table 9. 5 Ohm Test Circuit Component Designations and Values Part Description Part Number Manufacturer C1, C2 22 pf Chip Capacitors C85C22J5GAC Kemet C3.1 F Chip Capacitor C63C14J5RAC Kemet C4 2.2 F Chip Capacitor C85C225J4RAC Kemet C5 1.5 pf Chip Capacitor C63C159J5RAC Kemet C6 1.1 pf Chip Capacitor C63C119J5GAC Kemet L1 15 nh Chip Inductor HK16815NJ--T Taiyo Yuden R1 Chip Resistor ERJ3GEYRV Panasonic 6

5 OHM APPLICATION CIRCUIT: 23-27 MHz V SUPPLY R1 RF INPUT Z1 Z2 Z3 DUT Z4 Z5 L1 Z6 C3 Z7 C4 RF OUTPUT C1 V CC C2 C5 C6 Z1, Z7.347 x.58 Microstrip Z2.488 x.58 Microstrip Z3.87 x.58 Microstrip Z4.136 x.58 Microstrip Z5.36 x.58 Microstrip Z6.43 x.58 Microstrip PCB Getek Grade ML2C,.31, r =4.1 Figure 2. 5 Ohm Test Circuit Schematic 2 S21 S21, S11, S22 (db) 1 --1 --2 --3 21 S11 S22 23 25 27 29 f, FREQUENCY (MHz) Figure 21. S21, S11 and S22 versus Frequency C1 C5 MMG3XX Rev 2 Figure 22. 5 Ohm Test Circuit Component Layout R1 C4 C3 L1 C6 C2 Table 1. 5 Ohm Test Circuit Component Designations and Values Part Description Part Number Manufacturer C1, C2 22 pf Chip Capacitors C85C22J5GAC Kemet C3.1 F Chip Capacitor C63C14J5RAC Kemet C4 2.2 F Chip Capacitor C85C225J4RAC Kemet C5, C6 1.1 pf Chip Capacitors C63C119J5GAC Kemet L1 15 nh Chip Inductor HK16815NJ--T Taiyo Yuden R1 Chip Resistor ERJ3GEYRV Panasonic 7

5 OHM APPLICATION CIRCUIT: 34-36 MHz V SUPPLY R1 RF INPUT Z1 Z2 Z3 Z4 DUT Z5 Z6 L1 Z7 C3 Z8 C4 RF OUTPUT C1 V CC C2 C5 C6 C7 Z1, Z8.347 x.58 Microstrip Z2.68 x.58 Microstrip Z3.419 x.58 Microstrip Z4, Z5.88 x.58 Microstrip Z6.84 x.58 Microstrip Z7.43 x.58 Microstrip PCB Getek Grade ML2C,.31, r =4.1 Figure 23. 5 Ohm Test Circuit Schematic 2 1 S21 R1 S21, S11, S22 (db) --1 --2 --3 34 S11 S22 345 35 355 36 f, FREQUENCY (MHz) Figure 24. S21, S11 and S22 versus Frequency C1 C5 C6 MMG3XX Rev 2 C4 C3 L1 Figure 25. 5 Ohm Test Circuit Component Layout C7 C2 Table 11. 5 Ohm Test Circuit Component Designations and Values Part Description Part Number Manufacturer C1 3.3 pf Chip Capacitor C85C339J5GAC Kemet C2 2. pf Chip Capacitor C85C29J5GAC Kemet C3.1 F Chip Capacitor C63C14J5RAC Kemet C4 2.2 F Chip Capacitor C85C225J4RAC Kemet C5.6 pf Chip Capacitor 635JR6BS AVX C6.9 pf Chip Capacitor 635JR9BS AVX C7.8 pf Chip Capacitor 635JR8BS AVX L1 56 nh Chip Inductor HK16856NJ--T Taiyo Yuden R1 Chip Resistor ERJ3GEYRV Panasonic 8

5 OHM TYPICAL CHARACTERISTICS Table 12. Common Emitter S -Parameters (,T A =25 C, 5 Ohm System) f S 11 S 21 S 12 S 22 MHz S 11 S 21 S 12 S 22 25.622 174.6 1.28 153.8.336.6.448 --171.6 3.618 174. 1.17 148.3.336.3.457 --171.9 35.616 173.4 9.933 143.1.337 --.1.465 --172.5 4.613 173. 9.76 138.3.337 --.4.475 --173.3 45.611 172.5 9.586 133.8.338 --.6.483 --174. 5.611 172. 9.3 129.8.338 --.8.49 --174.9 55.61 171.4 9.9 126..339 -- 1..497 --175.8 6.61 17.9 8.716 122.4.339 -- 1.2.53 --176.8 65.61 17.4 8.363 119.2.34 -- 1.4.58 --177.9 7.611 169.9 8.64 116.2.34 -- 1.6.512 --178.9 75.615 169.5 7.734 113.3.341 -- 1.7.517 176.5 8.618 171.8 7.43 11.9.342 -- 1.8.526 175.5 85.621 171.4 7.73 18.4.342 -- 1.9.533 174.5 9.625 17.9 6.838 16..343 -- 2..536 173.5 95.624 17.2 6.629 13.7.343 -- 2.2.536 172.6 1.624 169.6 6.422 11.5.344 -- 2.3.537 171.8 15.624 168.9 6.227 99.4.344 -- 2.5.537 17.9 11.625 168.3 6.44 97.3.346 -- 2.7.538 169.9 115.626 167.6 5.866 95.4.347 -- 2.8.538 169.1 12.628 166.9 5.7 93.5.349 -- 3..539 168.2 125.629 166.1 5.545 91.7.351 -- 3.2.54 167.3 13.632 165.4 5.393 89.9.352 -- 3.4.54 166.5 135.634 164.6 5.257 88.2.354 -- 3.6.541 165.6 14.636 163.8 5.117 86.5.355 -- 3.8.543 164.9 145.64 163. 4.988 84.8.356 -- 4..544 164.1 15.643 162.2 4.864 83.2.357 -- 4.2.545 163.3 155.646 161.3 4.742 81.7.359 -- 4.4.547 162.6 16.649 16.5 4.63 8.1.36 -- 4.5.549 161.8 165.653 159.7 4.517 78.6.361 -- 4.8.55 161.1 17.657 158.9 4.414 77.1.362 -- 5..552 16.3 175.661 158. 4.312 75.6.363 -- 5.2.554 159.6 18.665 157.2 4.215 74.2.364 -- 5.5.556 158.9 185.669 156.4 4.123 72.7.364 -- 5.7.557 158.2 19.673 155.5 4.33 71.3.365 -- 6..559 157.4 195.677 154.7 3.947 69.8.366 -- 6.3.56 156.7 2.681 153.8 3.864 68.4.367 -- 6.6.562 156. 25.685 153. 3.783 67..367 -- 6.9.563 155.2 21.689 152.2 3.77 65.5.368 -- 7.2.564 154.4 215.693 151.3 3.633 64.1.369 -- 7.6.564 153.6 22.697 15.5 3.562 62.7.369 -- 7.9.565 152.8 225.71 149.6 3.494 61.3.37 -- 8.3.565 152. 23.75 148.7 3.426 59.8.371 -- 8.7.565 151.2 235.79 147.8 3.363 58.4.371 -- 9.1.564 15.3 (continued) 9

5 OHM TYPICAL CHARACTERISTICS Table 12. Common Emitter S -Parameters (,T A =25 C, 5 Ohm System) (continued) f S 11 S 21 S 12 S 22 MHz S 11 S 21 S 12 S 22 24.712 146.9 3.299 57..372 -- 9.5.564 149.5 245.715 146. 3.24 55.6.373 -- 9.9.563 148.6 25.719 145. 3.181 54.1.373 --1.3.562 147.7 255.722 144.1 3.124 52.7.374 --1.8.562 146.8 26.724 143.1 3.71 51.3.374 -- 11.2.561 145.9 265.728 142.2 3.17 49.9.375 -- 11.6.56 145. 27.73 141.2 2.968 48.5.376 --12..559 144. 275.733 14.2 2.92 47.1.377 --12.4.559 143.1 28.736 139.2 2.872 45.8.378 --12.9.558 142.1 285.738 138.2 2.828 44.4.38 --13.4.557 141.1 29.74 137.2 2.784 43..381 --13.8.557 14.1 295.742 136.2 2.743 41.7.382 --14.4.557 139.1 3.745 135.2 2.73 4.3.384 --14.9.557 138.1 35.747 134.2 2.664 39..385 --15.4.557 137.1 31.749 133.1 2.627 37.6.386 --15.9.557 136.1 315.751 132.1 2.59 36.3.388 --16.4.557 135.1 32.753 131.1 2.555 35..389 --17..558 134.1 325.756 13.1 2.521 33.7.39 --17.5.558 133.2 33.758 129.1 2.487 32.4.391 --18..559 132.2 335.76 128.1 2.455 31.1.393 --18.5.56 131.3 34.762 127.1 2.422 29.8.394 --19..56 13.5 345.764 126.1 2.392 28.6.395 --19.5.561 129.6 35.766 125.1 2.361 27.3.396 --2..562 128.9 355.768 124.2 2.331 26.1.397 --2.5.563 128.1 36.77 123.2 2.32 24.9.398 --21..564 127.4 365.772 122.3 2.273 23.7.399 --21.4.565 126.7 37.774 121.3 2.246 22.6.4 --21.8.566 126.1 375.775 12.4 2.218 21.5.41 --22.2.567 125.6 38.777 119.5 2.192 2.4.43 --22.6.568 125.1 385.778 118.6 2.167 19.2.44 --23..569 124.6 39.78 117.6 2.142 18.1.45 --23.4.57 124.2 395.781 116.7 2.118 17.1.46 --23.9.571 123.7 4.783 115.8 2.91 16..47 --24.2.572 123.5 1

1.9 3. 2X 45 4.35 2X 1.25.85 3X.7 2X 1.5 Figure 26. PCB Pad Layout for SOT -89A M314N AWLYWZ Figure 27. Product Marking 11

PACKAGE DIMENSIONS 12

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PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS Refer to the following documents to aid your design process. Application Notes AN1955: Thermal Measurement Methodology of RF Power Amplifiers AN31: General Purpose Amplifier Biasing Software.s2p File Development Tools Printed Circuit Boards Reference Designs 211--217 MHz, 4 W, 28 V W--CDMA Smart Demo Reference Design (Devices MMG314N, MW7IC224N) To Download Resources Specific to a Given Part Number: 1. Go to http://www.nxp.com/rf 2. Search by part number 3. Click part number link 4. Choose the desired resource from the drop down menu FAILURE ANALYSIS At this time, because of the physical characteristics of the part, failure analysis is limited to electrical signature analysis. In cases where Freescale is contractually obligated to perform failure analysis (FA) services, full FA may be performed by third party vendors with moderate success. For updates contact your local Freescale Sales Office. The following table summarizes revisions to this document. REVISION HISTORY Revision Date Description Apr. 28 Initial Release of Data Sheet 1 Sept. 28 Updated Fig. 15, S21, S11 and S22 versus Frequency, to correct S11 and S22 curve label transposition error, p. 6 Updated data in Table 12, Common Emitter S-Parameters, for better simulation response, pp. 9--1 2 Jan. 211 Corrected temperature at which ThetaJC is measured from 25 C to81 C and added no RF applied to Thermal Characteristics table to indicate that thermal characterization is performed under DC test with no RF signal applied, p. 1 Removed I CC bias callout from applicable graphs as bias is not a controlled value, pp. 4--9 Removed I CC bias callout from Table 12, Common Emitter S--Parameters heading as bias is not a controlled value, pp. 9--1 Added.s2p file and Printed Circuit Boards availability to Software and Tools, p. 16 Added Reference Design availability to Development Tools, p. 16 3 Oct. 211 Table 1, Maximum Ratings, increased Input Power from 15 dbm to 25 dbm to reflect the true capability of the device, p. 1 Changed ESD Human Body Model rating from Class 1C to Class 1B to reflect recent ESD test results of the device, p. 2 Corrected part number for the C7 capacitor in Table 8, 5 Ohm Test Circuit Component Designations and Values, from C63C189J5GAC to C126C189D5GAC, p. 5. Replaced the PCB Pad Layout drawing, the package isometric and mechanical outline for Case 1514--2 (SOT--89) with Case 2142--1 (SOT--89) as a result of the device transfer from a Freescale wafer fab to an external GaAs wafer fab and new assembly site. The new assembly and test site s SOT--89 package has slight dimensional differences, pp. 1, 11--14. Refer to PCN13337, GaAs Fab Transfer. 4 Aug. 214 Table 2, Maximum Ratings: updated Junction Temperature from 15 C to 175 C to reflect recent test results of the device, p. 1 Added Failure Analysis information, p. 15 5 Mar. 216 Overview paragraph updated to reflect actual matching of the device, p. 1 Fig. 27, Product Marking: updated date code line to reflect improved traceability information, p. 11 15

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