NOT RECOMMENDED FOR NEW DESIGN

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1 Technical Data RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of this device make it ideal for large- signal, common- source amplifier applications in 26 volt base station equipment. Typical Performance at 945 MHz, 26 Volts Output Power 60 Watts PEP Power Gain 18.0 db Efficiency 40% (Two Tones) IMD dbc Capable of Handling 5:1 26 Vdc, 945 MHz, 60 Watts CW Output Power Features Excellent Thermal Stability Characterized with Series Equivalent Large- Signal Impedance Parameters Integrated ESD Protection 200 C Capable Plastic Package N Suffix Indicates Lead- Free Terminations. RoHS Compliant. TO Available in Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel. Table 1. Maximum Ratings Rating Symbol Value Unit Drain-Source Voltage V DSS - 0.5, +65 Vdc Gate-Source Voltage V GS - 0.5, +15 Vdc Total Device T C = 25 C Derate above 25 C P D Storage Temperature Range T stg - 65 to +150 C Operating Junction Temperature T J 200 C Table 2. Thermal Characteristics W W/ C Characteristic Symbol Value (1) Unit Thermal Resistance, Junction to Case R θjc 0.56 C/W Table 3. ESD Protection Characteristics Human Body Model Machine Model Charge Device Model Table 4. Moisture Sensitivity Level Test Conditions Document Number: MRF9060N Rev. 13, 6/ MHz, 60 W, 26 V LATERAL N- CHANNEL BROADBAND RF POWER MOSFET CASE , STYLE 1 TO PLASTIC Class 1 (Minimum) M2 (Minimum) C6 (Minimum) Test Methodology Rating Package Peak Temperature Unit Per JESD22-A113, IPC/JEDEC J-STD C 1. MTTF calculator available at Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product., Inc., All rights reserved. 1

2 Table 5. Electrical Characteristics (T A = 25 C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Off Characteristics Zero Gate Voltage Drain Leakage Current (V DS = 65 Vdc, V GS = 0 Vdc) I DSS 10 μadc Zero Gate Voltage Drain Leakage Current (V DS = 26 Vdc, V GS = 0 Vdc) Gate-Source Leakage Current (V GS = 5 Vdc, V DS = 0 Vdc) On Characteristics Gate Threshold Voltage (V DS = 10 Vdc, I D = 200 μadc) Gate Quiescent Voltage (V DS = 26 Vdc, I D = 450 madc) Drain-Source On-Voltage (V GS = 10 Vdc, I D = 1.3 Adc) Forward Transconductance (V DS = 10 Vdc, I D = 4 Adc) Dynamic Characteristics Input Capacitance (V DS = 26 Vdc ± 30 1 MHz, V GS = 0 Vdc) Output Capacitance (V DS = 26 Vdc ± 30 1 MHz, V GS = 0 Vdc) Reverse Transfer Capacitance (V DS = 26 Vdc ± 30 1 MHz, V GS = 0 Vdc) Functional Tests (In Freescale Test Fixture, 50 ohm system) Two-Tone Common-Source Amplifier Power Gain f1 = MHz, f2 = MHz) Two-Tone Drain Efficiency f1 = MHz, f2 = MHz) 3rd Order Intermodulation Distortion f1 = MHz, f2 = MHz) Input Return Loss f1 = MHz, f2 = MHz) Two-Tone Common-Source Amplifier Power Gain f1 = MHz, f2 = MHz and f1 = MHz, f2 = MHZ) Two-Tone Drain Efficiency f1 = MHz, f2 = MHz and f1 = MHz, f2 = MHZ) 3rd Order Intermodulation Distortion f1 = MHz, f2 = MHz and f1 = MHz, f2 = MHZ) Input Return Loss f1 = MHz, f2 = MHz and f1 = MHz, f2 = MHZ) I DSS 1 μadc I GSS 1 μadc V GS(th) Vdc V GS(Q) Vdc V DS(on) Vdc g fs 5.3 S C iss 101 pf C oss 53 pf C rss 2.5 pf G ps db η % IMD dbc IRL db G ps 18 db η 40 % IMD -31 dbc IRL db 2

3 V GG RF INPUT C6 + Z1 Z2 Z3 Z4 Z5 Z6 Z7 C1 B1 Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 C7 C2 L x Microstrip x Microstrip x Microstrip x x 0.080, Taper x Microstrip x Microstrip x x 0.140, Taper x Microstrip x Microstrip Z10 Z11 Z12 Z13 Z14 Z15 Z16 Z17 Z x Microstrip x Microstrip x Microstrip x Microstrip x Microstrip x Microstrip x Microstrip x Microstrip x Microstrip Figure MHz Broadband Test Circuit Schematic Table MHz Broadband Test Circuit Component Designations and Values Z8 C3 C4 Z9 C5 Z10 DUT Z11 C9 Z12 C8 L2 Z13 B2 V DD C14 C15 C16 C17 RF OUTPUT Z14 Z15 Z16 Z17 Z18 C13 C10 C11 C12 Part Description Part Number Manufacturer B1 Short Ferrite Bead Fair-Rite B2 Long Ferrite Bead Fair-Rite C1, C7, C13, C14 47 pf Chip Capacitors ATC100B470JT500XT ATC C2, C3, C Gigatrim Variable Capacitors 27291SL Johanson C4, C5 11 pf Chip Capacitors () ATC100B110JT500XT ATC 10 pf Chip Capacitors (MRF9060NBR1) ATC100B100JT500XT C6, C15, C16 10 F, 35 V Tantalum Chip Capacitors T491D106K035AT Kemet C8, C9 10 pf Chip Capacitors ATC100B100JT500XT Newark C pf Chip Capacitor ATC100B3R9CT500XT ATC C pf Chip Capacitor ATC100B1R7BT500XT ATC C F Electrolytic Chip Capacitor MCAX63V227M13X22 Multicomp L1, L nh Inductors A04T-5 Coilcraft Board Material 30 mil Glass Teflon, ε r = 2.55 Copper Clad, 2 oz Cu RF Taconic 3

4 C6 C17 INPUT C1 V GG B1 C2 C7 L1 C3 C4 WB1 C5 CUT OUT AREA WB2 C8 C9 C14 L2 B2 C10 V DD C15 C16 C11 C12 C13 MRF9060M MRF9060MB OUTPUT Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure MHz Broadband Test Circuit Component Layout 4

5 TYPICAL CHARACTERISTICS G ps, POWER GAIN (db) INTERMODULATION DISTORTION (dbc) IMD, G ps, POWER GAIN (db) G ps 45 η V DD = 26 Vdc P out = 60 W (PEP) I DQ = 450 ma 28 Two Tone, 100 khz Tone Spacing 14 IMD IRL f, FREQUENCY (MHz) Figure 3. Class AB Broadband Circuit Performance P out, OUTPUT POWER (WATTS) PEP P out, OUTPUT POWER (WATTS) PEP Figure 4. Power Gain versus Output Power Figure 5. Intermodulation Distortion versus Output Power V DD = 26 Vdc I DQ = 450 ma f1 = 945 MHz f2 = MHz I DQ = 625 ma 500 ma 450 ma 275 ma 3rd Order 5th Order 7th Order P out, OUTPUT POWER (WATTS) PEP V DD = 26 Vdc f1 = 945 MHz f2 = MHz 100 Figure 6. Intermodulation Distortion Products versus Output Power G ps, POWER GAIN (db) INTERMODULATION DISTORTION (dbc) IMD, I DQ = 275 ma 450 ma 500 ma η, DRAIN EFFICIENCY (%) IMD, INTERMODULATION DISTORTION (dbc) 625 ma IRL, INPUT RETURN LOSS (db) G 18 ps η V DD = 26 Vdc I DQ = 450 ma 10 f = 945 MHz P out, OUTPUT POWER (WATTS) AVG. Figure 7. Power Gain and Efficiency versus Output Power V DD = 26 Vdc f1 = 945 MHz f2 = MHz 60 η, DRAIN EFFICIENCY (%) 5

6 TYPICAL CHARACTERISTICS G ps, POWER GAIN (db) 20 G ps η V DD = 26 Vdc 12 I DQ = 450 ma f1 = 945 MHz 20 f2 = MHz IMD P out, OUTPUT POWER (WATTS) PEP INTERMODULATION DISTORTION (dbc) η, DRAIN EFFICIENCY (%) Figure 8. Power Gain, Efficiency, and IMD versus Output Power MTTF FACTOR (HOURS X AMPS 2 ) T J, JUNCTION TEMPERATURE ( C) This above graph displays calculated MTTF in hours x ampere 2 drain current. Life tests at elevated temperatures have correlated to better than ±10% of the theoretical prediction for metal failure. Divide MTTF factor by I 2 D for MTTF in a particular application. Figure 9. MTTF Factor versus Junction Temperature 210 IMD, 6

7 f = 960 MHz f MHz f = 930 MHz Z source Ω j j j0.45 Z o = 2 Ω Z load V DD = 26 V, I DQ = 450 ma, P out = 60 W PEP Z load Ω j j j0.36 f = 960 MHz Z source = Test circuit impedance as measured from gate to ground. Z load = Test circuit impedance as measured from drain to ground. Input Matching Network Z source Z source Device Under Test Z load Output Matching Network f = 930 MHz Figure 10. Series Equivalent Source and Load Impedance 7

8 PACKAGE DIMENSIONS 8

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11 PRODUCT DOCUMENTATION, TOOLS AND SOFTWARE Refer to the following documents to aid your design process. Application Notes AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages AN1955: Thermal Measurement Methodology of RF Power Amplifiers AN3789: Clamping of High Power RF Transistors and RFICs in Over- Molded Plastic Packages Engineering Bulletins EB212: Using Data Sheet Impedances for RF LDMOS Devices Software Electromigration MTTF Calculator For Software and Tools, do a Part Number search at and select the Part Number link. Go to the Software & Tools tab on the part s Product Summary page to download the respective tool. The following table summarizes revisions to this document. REVISION HISTORY Revision Date Description 12 Sept Data sheet revised to reflect part status change, p. 1, including use of applicable overlay. Replaced Case Outline with , Issue K, p. 1, Corrected cross hatch pattern in bottom view and changed its dimensions (D2 and E3) to minimum value on source contact (D2 changed from Min-Max to.290 Min; E3 changed from Min-Max to.150 Min). Added JEDEC Standard Package Number. Updated Part Numbers in Table 6, Component Designations and Values, to RoHS compliant part numbers, p. 3 Added Product Documentation and Revision History, p June 2009 Modified data sheet to reflect MSL rating change from 1 to 3 as a result of the standardization of packing process as described in Product and Process Change Notification number, PCN13516, p. 1 Added Electromigration MTTF Calculator availability to Product Documentation, Tools and Software, p

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