DATA SHEET. SiGe LOW NOISE AMPLIFIER FOR GPS/MOBILE COMMUNICATIONS. Part Number Order Number Package Marking Supplying Form

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1 DESCRIPTION The μpc8tk is a silicon germanium (SiGe) monolithic integrated circuit designed as a low noise amplifier for GPS and mobile communications. The package is -pin lead-less minimold, suitable for surface mount. This IC is manufactured using our 0 GHz fmax UHS (Ultra High Speed Process) SiGe bipolar process. FEATURES Low noise : NF =. db VCC =.0 V High gain : GP = 8. db VCC =.0 V Low current consumption : ICC =. ma VCC =.0 V Gain db compression output power : Po ( db) =.0 VCC =.0 V Built-in power-save function High-density surface mounting : -pin lead-less minimold package (.. 0. mm) APPLICATION Low noise amplifier for GPS and mobile communications ORDERING INFORMATION DATA SHEET Part Number Order Number Package Marking Supplying Form μpc8tk-e μpc8tk-e-a -pin lead-less minimold G Embossed tape 8 mm wide ( PKG) (Pb-Free) Note Pin, face the perforation side of the tape Qty kpcs/reel Note With regards to terminal solder (the solder contains lead) plated products (conventionally plated), contact your nearby sales office. Remark To order evaluation samples, contact your nearby sales office. Part number for sample order: μpc8tk-a BIPOLAR ANALOG INTEGRATED CIRCUIT μpc8tk SiGe LOW NOISE AMPLIFIER FOR GPS/MOBILE COMMUNICATIONS Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Document No. PU0EJ0V0DS (th edition) Date Published January 00 CP(K) The mark shows major revised points.

2 PIN CONNECTIONS (Top View) G INTERNAL BLOCK DIAGRAM INPUT GND PS Bias (Bottom View) VCC GND OUTPUT Pin No. Pin Name INPUT GND PS OUTPUT GND VCC Data Sheet PU0EJ0V0DS

3 ABSOLUTE MAXIMUM RATINGS Parameter Symbol Supply Voltage VCC TA = + C Test Conditions Ratings Power-Saving Voltage VPS 0. to VCC +0. V Power Dissipation of Package PD TA = +8 C Note mw Operating Ambient Temperature TA 0 to +8 C Storage Temperature Tstg to +0 C Input Power Pin Note Mounted on double-side copper-clad 0 0. mm epoxy glass PWB RECOMMENDED OPERATING RANGE Parameter Symbol MIN. TYP. MAX. Unit Supply Voltage VCC.7.0. V Operating Ambient Temperature TA + +8 C Operating Frequency Range fin 7 MHz.0 +0 Unit V dbm Data Sheet PU0EJ0V0DS

4 ELECTRICAL CHARACTERISTICS (TA = + C, VCC =.0 V, VPS =.0 V, fin = 7 MHz, unless otherwise specified) Parameter Symbol Test Conditions MIN. TYP. MAX. Unit Circuit Current ICC Power Gain GP No Signal At Power-Saving Mode μa Noise Figure NF.. db Input rd Order Distortion Intercept Point Input Return Loss RLin Output Return Loss RLout IIP dbm ma db.0 7. db 0. db Isolation ISL. db Rising Voltage From Power-Saving Mode Falling Voltage From Power-Saving Mode VPSon. V VPSoff 0.8 V Gain Flatness Flat frf = ±. MHz 0. db Gain db Compression Output Power PO ( db).0 dbm Output Power PO Pin = 0 dbm. +.0 dbm TEST CIRCUIT IN High : ON Low : OFF (Power-Save) C pf C VPS.7 nh. pf C L 0. μf R 70 Ω C 0. μf L nh 8. nh L VCC C 8 pf COMPONENTS OF TEST CIRCUIT FOR MEASURING ELECTRICAL CHARACTERISTICS Symbol Form Rating Part Number Maker C, C Chip Capacitor 0. μf GRM Murata C Chip Capacitor. pf GRM Murata C Chip Capacitor pf GRM Murata C Chip Capacitor 8 pf GRM Murata R Resistor 70 Ω RR08 Susumu L Inductor.7 nh TFL00 Susumu L Inductor nh TFL08 or TFL00 Susumu L Inductor 8. nh TFL00 Susumu OUT Data Sheet PU0EJ0V0DS

5 ILLUSTRATION OF THE TEST CIRCUIT ASSEMBLED ON EVALUATION BOARD IN Notes pf. pf.7 nh 0. μf 70 Ω PS 0. μf nh 8. nh VCC 8 pf mm double-side copper-clad hydrocarbon ceramic woven glass PWB (Rogers: R000, εr =.8).. Back side: GND pattern. Au plated on pattern. represents cutout. : Through holes OUT Data Sheet PU0EJ0V0DS

6 TYPICAL CHARACTERISTICS (TA = + C, unless otherwise specified) Voltage Gain Gain (db) Voltage Gain Gain (db) Output Power ( tones) Pout (dbm) rd Order Intermodulation Distortion IM (dbm) VOLTAGE GAIN vs. FREQUENCY VOLTAGE GAIN vs. POWER-SAVE PIN APPLIED VOLTAGE VCC =.0 V f = 7 MHz TA = 0 C TA = + C TA = 8 C TA = C TA = C TA = +8 C Power-Save Pin Applied Voltage VPS (V) OUTPUT POWER ( tones), IM vs. INPUT POWER f = 7. MHz f = 7. MHz Pout IM TA = 0 C Input Power Pin (dbm) Noise Figure NF (db) Output Power ( tones) Pout (dbm) rd Order Intermodulation Distortion IM (dbm) Output Power ( tones) Pout (dbm) rd Order Intermodulation Distortion IM (dbm) NOISE FIGURE vs. FREQUENCY TA = + C TA = 0 C Input Power Pin (dbm) TA = +8 C OUTPUT POWER ( tones), IM vs. INPUT POWER f = 7. MHz f = 7. MHz Pout IM TA = C OUTPUT POWER ( tones), IM vs. INPUT POWER f = 7. MHz f = 7. MHz Remark The graphs indicate nominal characteristics. Pout IM TA = 8 C Input Power Pin (dbm) Data Sheet PU0EJ0V0DS

7 S-PARAMETERS (TA = + C,, monitored at connector on board) Input Return Loss RLin (db) Power Gain Gain (db) S -FREQUENCY S-FREQUENCY ; 7.09 Ω.0 Ω.07 nh ;.79 Ω.9 Ω 9. pf GHz GHz START MHz STOP MHz START MHz STOP MHz INPUT RETURN LOSS vs. FREQUENCY GHz POWER GAIN vs. FREQUENCY.7 GHz Output Return Loss RLout (db) Isolation ISL (db) OUTPUT RETURN LOSS vs. FREQUENCY GHz ISOLATION vs. FREQUENCY.7 GHz Remark The graphs indicate nominal characteristics Data Sheet PU0EJ0V0DS 7

8 PACKAGE DIMENSIONS -PIN LEAD-LESS MINIMOLD ( PKG) (UNIT: mm) (Top View) (Bottom View).±0. 0.±0.0 Remark ( ) : Reference value 0.8± ±0.0.±0..± ±0.0 0.± ±0. 8 Data Sheet PU0EJ0V0DS

9 NOTES ON CORRECT USE () Observe precautions for handling because of electro-static sensitive devices. () Form a ground pattern as widely as possible to minimize ground impedance (to prevent undesired oscillation). All the ground terminals must be connected together with wide ground pattern to decrease impedance difference. () The bypass capacitor should be attached to VCC line. RECOMMENDED SOLDERING CONDITIONS This product should be soldered and mounted under the following recommended conditions. methods and conditions other than those recommended below, contact your nearby sales office. S oldering Method Soldering Conditions Infrared Reflow Peak temperature (package surface temperature) : 0 C or below Time at peak temperature Time at temperature of 0 C or higher : 0 seconds or less : 0 seconds or less Preheating time at 0 to 80 C : 0±0 seconds Maximum number of reflow processes Maximum chlorine content of rosin flux (% mass) : times : 0.%(Wt.) or below Wave Soldering Peak temperature (molten solder temperature) : 0 C or below Time at peak temperature : 0 seconds or less Preheating temperature (package surface temperature) : 0 C or below Maximum number of flow processes Maximum chlorine content of rosin flux (% mass) : time : 0.%(Wt.) or below Partial Heating Peak temperature (terminal temperature) : 0 C or below Soldering time (per side of device) Maximum chlorine content of rosin flux (% mass) : seconds or less : 0.%(Wt.) or below Caution Do not use different soldering methods together (except for partial heating). For soldering Condition Symbol IR0 WS0 HS0 Data Sheet PU0EJ0V0DS 9