Optocoupler, Phototransistor Output, AC Input



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Optocoupler, Phototransistor Output, AC Input DESCRIPTION The SFH62A (DIP) and SFH626 (SMD) feature a high current transfer ratio, low coupling capacitance and high isolation voltage. These couplers have a GaAs infrared diode emitter, which is optically coupled to a silicon planar phototransistor detector, and is incorporated in a plastic DIP-4 or SMD package. The coupling devices are designed for signal transmission between two electrically separated circuits. The couplers are end-stackable with 2.54 mm lead spacing. Creepage and clearance distances of > 8 mm are achieved with option 6. This version complies with IEC 695 (DIN VDE 85) for reinforced insulation to an operation voltage of 4 V RMS or DC. A/C C/A 1 2 4 3 C E FEATURES Good CTR linearity depending on forward current Isolation test voltage, 53 V RMS High collector emitter voltage, V CEO = 7 V Low saturation voltage Fast switching times Low CTR degradation Temperature stable Low coupling capacitance End-stackable,.1" (2.54 mm) spacing High common-mode interference immunity Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 AGENCY APPROVALS The safety application model number covering all products in this datasheet is SFH62A and SHF626. This model number should be used when consulting safety agency documents. UL1577, file no. E52744 system code H, double protection CSA 93751 BSI EN 695, EN 665 DIN EN 6747-5-5 (VDE 884-5), available with option 1 CQC GB8898-211, GB4943.1-211 ORDERING INFORMATION S F H 6 2 x - # X # # T DIP-# Option 6 PART NUMBER CTR BIN PACKAGE OPTION TAPE AND REEL 7.62 mm Option 7 1.16 mm Option 9 AGENCY CERTIFIED/PACKAGE SFH62A CTR (%) ± 1 ma SFH626 UL, cul, BSI 4 to 125 63 to 2 1 to 32 4 to 125 63 to 2 1 to 32 DIP-4 SFH62A-1 SFH62A-2 SFH62A-3 - - - DIP-4, 4 mil, option 6 SFH62A-1X6 SFH62A-2X6 SFH62A-3X6 - - - SMD-4, option 7 - SFH62A-2X7T (1) - - - - SMD-4, option 9 - - - SFH626-1T (1) SFH626-2T (1) SFH626-3T (1) VDE, UL, CUL, BSI 4 to 125 63 to 2 1 to 32 4 to 125 63 to 2 1 to 32 DIP-4 SFH62A-1X1 SFH62A-2X1 SFH62A-3X1 - - - DIP-4, 4 mil, option 6 - SFH62A-2X16 SFH62A-3X16 - - - SMD-4, option 7 - SFH62A-2X17T - - - - SMD-4, option 9 - - - - SFH626-2X1T (1) SFH626-3X1T (1) Notes Additional options may be possible, please contact sales office. (1) Also available in tubes; do not add T to end. Rev. 2.3, 31-Aug-15 1 Document Number: 83675 >.7 mm >.1 mm

ABSOLUTE MAXIMUM RATINGS (T amb = 25 C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT INPUT DC forward current I F ± 6 ma Surge forward current t p 1 μs I FSM ± 2.5 A Power dissipation P diss 1 mw OUTPUT Collector emitter voltage V CEO 7 V Emitter collector voltage V ECO 7 V I C 5 ma Collector current t p 1 μs I C 1 ma Power dissipation P diss 15 mw COUPLER Total power dissipation P tot 25 mw Storage temperature range T stg -55 to +15 C Ambient temperature range T amb -55 to +1 C Junction temperature T j 1 C Soldering temperature (1) max. 1 s, dip soldering distance to seating plane 1.5 mm T sld 26 C Notes Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability. (1) Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through hole devices (DIP). ELECTRICAL CHARACTERISTICS (T amb = 25 C, unless otherwise specified) PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT INPUT Forward voltage I F = ± 6 ma V F 1.25 1.65 V Capacitance V R = V, f = 1 MHz C O 5 pf Thermal resistance R thja 75 K/W OUTPUT Collector emitter capacitance V CE = 5 V, f = 1 MHz C CE 6.8 pf Thermal resistance R thja 5 C/W COUPLER Collector emitter saturation voltage I F = ± 1 ma, I C = 2.5 ma V CEsat.25.4 V Coupling capacitance C C.2 pf Collector emitter leakage current V CE = 1 V SFH62A-1 I CEO 2 5 na SFH626-1 I CEO 2 5 na SFH62A-2 I CEO 2 5 na SFH626-2 I CEO 2 5 na SFH62A-3 I CEO 5 1 na SFH626-3 I CEO 5 1 na Note Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. Still air, coupler soldered to PCB or base. Rev. 2.3, 31-Aug-15 2 Document Number: 83675

CURRENT TRANSFER RATIO (T amb = 25 C, unless otherwise specified) PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT SFH62A-1 CTR 4 125 % SFH626-1 CTR 4 125 % V CE = 5 V, I F = ± 1 ma SFH62A-2 CTR 63 2 % SFH626-2 CTR 63 2 % SFH62A-3 CTR 1 32 % I C /I F SFH626-3 CTR 1 32 % SFH62A-1 CTR 13 3 % SFH626-1 CTR 13 3 % V CE = 5 V, I F = ± 1 ma SFH62A-2 CTR 22 45 % SFH626-2 CTR 22 45 % SFH62A-3 CTR 34 7 % SFH626-3 CTR 34 7 % I F R L =75 Ω V CC =5 V I C 47 Ω isfh62a_8 Fig. 1 - Switching Times Linear Operation (without Saturation) SWITCHING CHARACTERISTICS (T amb = 25 C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Turn-on time R L = 75 Ω, I F = ± 1 ma, V CC = 5 V t on 3 μs Rise time R L = 75 Ω, I F = ± 1 ma, V CC = 5 V t r 2 μs Turn-off time R L = 75 Ω, I F = ± 1 ma, V CC = 5 V t off 2.3 μs Fall time R L = 75 Ω, I F = ± 1 ma, V CC = 5 V t f 2 μs Cut-off frequency R L = 75 Ω, I F = ± 1 ma, V CC = 5 V t ctr 28 khz SAFETY AND INSULATION RATINGS PARAMETER TEST CONDITION SYMBOL VALUE UNIT Climatic classification According to IEC 68 part 1 55/115/21 Pollution degree According to DIN VDE 19 2 Comparative tracking index Insulation group IIIa CTI 175 Maximum rated withstanding isolation voltage According to UL1577, t = 1 min V ISO 447 V RMS Tested withstanding isolation voltage According to UL1577, t = 1 s V ISO 53 V RMS Maximum transient isolation voltage According to DIN EN 6747-5-5 V IOTM 8 V peak Maximum repetitive peak isolation voltage According to DIN EN 6747-5-5 V IORM 89 V peak Isolation resistance T amb = 25 C, V IO = 5 V R IO 1 12 Ω T amb = 1 C, V IO = 5 V R IO 1 11 Ω Output safety power P SO 7 mw Input safety current I SI 4 ma Input safety temperature T S 175 C Creepage distance DIP-4 7 mm Clearance distance DIP-4 7 mm Creepage distance DIP-4, 4 mil, option 6 8 mm Clearance distance DIP-4, 4 mil, option 6 8 mm Creepage distance SMD-4, option 7 and option 9 7 mm Clearance distance SMD-4, option 7 and option 9 7 mm Insulation thickness DTI.4 mm Note As per DIN EN 6747-5-5, 7.4.3.8.2, this optocoupler is suitable for safe electrical insulation only within the safety ratings. Compliance with the safety ratings shall be ensured by means of protective circuits. Rev. 2.3, 31-Aug-15 3 Document Number: 83675

TYPICAL CHARACTERISTICS (T amb = 25 C, unless otherwise specified) 1 3 2 I F = 1 ma, V CC = 5 V f = 1 MHz (%) 15 I C I F 1 2 3 2 1 C (pf) 1 5 C CE 1 1-25 25 5 75 isfh62a_1 T A ( C) 1-2 1-1 1 1 1 1 2 isfh62a_4 V e (V) Fig. 2 - Current Transfer Ratio (CTR) vs. Temperature Fig. 5 - Transistor Capacitance (Typ.) vs. Collector Emitter Voltage I C (ma) 3 2 I F = 14 ma I F = 12 ma I F = 1 ma I F = 8 ma I F (ma) 1 4 1 3.5.1.2 D =.5.1 D = t p T t p.2 Pulse cycle D = parameter T I F 1 I F = 6 ma I F = 4 ma 1 2.5 DC I F = 1 ma I F = 2 ma 5 1 15 V isfh62a_2 (V) CE 1 1 1-5 1-4 1-3 1-2 1-1 1 1 1 isfh62a_5 t p (s) Fig. 3 - Output Characteristics (Typ.) Collector Current vs. Collector Emitter Voltage Fig. 6 - Permissible Pulse Handling Capability Forward Current vs. Pulse Width V F (V) 1.2 1.1 V F = f (I F ) 25 C 5 C 75 C P tot (mw) 2 15 1 Transistor 1. 5 Diode.9 1-1 1 1 1 isfh62a_3 I F (ma) 1 2 25 5 75 1 isfh62a_6 T A ( C) Fig. 4 - Diode Forward Voltage (Typ.) vs. Forward Current Fig. 7 - Permissible Power Dissipation vs. Ambient Temperature Rev. 2.3, 31-Aug-15 4 Document Number: 83675

12 P tot = f (T A ) 9 I F (ma) 6 3 isfh62a_7 25 5 75 1 T A ( C) Fig. 8 - Permissible Diode Forward Current vs. Ambient Temperature PACKAGE DIMENSIONS in millimeters DIP-4, Standard.7 min. 5.1 max. 4.7 ±.15 7.62 typ. 6.6 ±.25 3.55 ±.25 1.27 ±.1.5 ±.1 2.54 typ..5 min. 3 to 9 3.1 ±.5.25 ±.1 4 3 Pin one I.D. 1 2 Rev. 2.3, 31-Aug-15 5 Document Number: 83675

DIP-4, Option 6.7 min. 5.1 max. 4.7 ±.15 1.16 typ. 7.62 typ. 6.6 ±.25 3.55 ±.25.1 min. 1.27 ±.1.5 ±.1 2.54 typ. 4 3 3.5 ±.5 1.55 ±.4.25 ±.1 Pin one I.D. 1 2 SMD-4, Option 7 1.3 max. 5.1 max. 7.62 typ..7 min. 4.7 ±.15 6.6 ±.25 3.55 ±.25.5 min..25 ±.1 4.3 ±.3 1.27 ±.1 2.54 typ..5 min. 8. min. Leads coplanarity.1 max. 4 3 2.54 R.25 1.78.76 1.52 8. min. Pin one I.D. 1 2 11.5 Rev. 2.3, 31-Aug-15 6 Document Number: 83675

SMD-4, Option 9.7 min. 5.1 max. 4.7 ±.15 1.5 max. 7.62 typ. 6.6 ±.25 2.54 R.25 1.78.76 3.55 ±.25.2 ±.1.25 ±.1 1.27 ±.1 2.54 typ..5 min. 8. min. Leads coplanarity.1 max. 4 3 1.52 8. min. Pin one I.D. 1 2 11.5 PACKAGE MARKING (example) Notes Only options 1 and 7 are reflected in the package marking. The VDE logo is only marked on option1 parts. Tape and reel suffix (T) is not part of the package marking. SOLDER PROFILES YWW H 68 SFH62A-1 V X1 Temperature ( C) 3 25 2 15 1 5 235 C to 26 C first wave wave ca. 2 K/s 1 C to 13 C 5 s 2 K/s second wave ca. 2 K/s forced cooling Lead temperature full line: typical dotted line: process limits ca. 5 K/s Temperature ( C) 3 25 2 15 1 5 255 C 24 C 217 C max. 12 s max. ramp up 3 C/s max. 26 C 245 C max. 3 s max. 1 s max. ramp down 6 C/s 94 8626 5 1 15 2 25 Time (s) Fig. 9 - Wave Soldering Double Wave Profile According to J-STD-2 for DIP-8 Devices 19841 5 1 15 2 25 3 Time (s) Fig. 1 - Lead (Pb)-free Reflow Solder Profile According to J-STD-2 for SMD-8 Devices Rev. 2.3, 31-Aug-15 7 Document Number: 83675

HANDLING AND STORAGE CONDITIONS ESD level: HBM class 2 Floor life: unlimited Conditions: T amb < 3 C, RH < 85 % Moisture sensitivity level 1, according to J-STD-2 Rev. 2.3, 31-Aug-15 8 Document Number: 83675

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