V DS 2 V V GS Max ± 2 V R DSon) max @V GS = V) 24 m * PD - 9787A HEXFET Power MOSFET R DSon) max @V GS = 4.V) 4 m 6 Micro3 TM SOT-23) Applications) Load System Switch Features and Benefits Features Benefits Low R DSon) 24m ) Lower switching losses Industry-standard pinout Multi-vendor compatibility Compatible with existing Surface Mount Techniques results in Easier manufacturing RoHS compliant containing no lead, no bromide and no halogen Environmentally friendly MSL, Consumer qualification Increased reliability Absolute Maximum Ratings Symbol Parameter Max. Units V DS Drain-Source Voltage 2 V I D @ T A = 2 C Continuous Drain Current, V GS @ V.8 I D @ T A = 7 C Continuous Drain Current, V GS @ V 4.6 A I DM Pulsed Drain Current 24 P D @T A = 2 C Maximum Power Dissipation.2 P D @T A = 7 C Maximum Power Dissipation.8 W Linear Derating Factor. W C V GS Gate-to-Source Voltage ± 2 V T J, T STG Junction and Storage Temperature Range - to + C Thermal Resistance Symbol Parameter Typ. Max. Units R JA Junction-to-Ambient e R JA Junction-to-Ambient t<s) f 99 ORDERING INFORMATION: See detailed ordering and shipping information on the last page of this data sheet. Notes through are on page www.irf.com CW 2292
Electric Characteristics @ T J = 2 C unless otherwise specified) Symbol Parameter Min. Typ. Max. Units Conditions V BR)DSS Drain-to-Source Breakdown Voltage 2 V V GS = V, I D = 2μA V BR)DSS T J Breakdown Voltage Temp. Coefficient.2 V C Reference to 2 C, I D = ma R DSon) Static Drain-to-Source On-Resistance 2 24 m V GS = V, I D =.8A d 32 4 V GS = 4.V, I D = 4.6A d V GSth) Gate Threshold Voltage.3.7 2.3 V V DS = V GS, I D = μa I DSS. V DS = 2V, V GS = V Drain-to-Source Leakage Current μa V DS = 2V, V GS = V, T J = 2 C I GSS Gate-to-Source Forward Leakage V GS = 2V na Gate-to-Source Reverse Leakage - V GS = -2V R G Internal Gate Resistance.6 gfs Forward Transconductance S V DS = V, I D =.8A Q g Total Gate Charge.4 I D =.8A Q gs Gate-to-Source Charge. nc V DS =3V Q gd Gate-to-Drain "Miller") Charge.8 V GS = V d t don) Turn-On Delay Time 2.7 V DD =3Vd t r Rise Time 2. I D =.A ns t doff) Turn-Off Delay Time 9. R G = 6.8 t f Fall Time 2.9 V GS = V C iss Input Capacitance 43 V GS = V C oss Output Capacitance pf V DS = V C rss Reverse Transfer Capacitance 49 ƒ =.MHz Source - Drain Ratings and Characteristics Symbol Parameter Min. Typ. Max. Units Conditions I S Continuous Source Current.2 MOSFET symbol D I SM Body Diode) showing the A Pulsed Source Current integral reverse 24 Body Diode)Ãc p-n junction diode. G S V SD Diode Forward Voltage.2 V T J = 2 C, I S =.8A, V GS = V d t rr Reverse Recovery Time 7 ns T J = 2 C, V R = 2V, I F =.8A Q rr Reverse Recovery Charge 4.2 6.3 nc didt = Aμs d 2 www.irf.com
I D, Drain-to-Source Current A) R DSon), Drain-to-Source On Resistance Normalized) I D, Drain-to-Source Current A) I D, Drain-to-Source Current A) VGS TOP V V 4.V 4.V 3.8V 3.V 3.3V BOTTOM 3.V VGS TOP V V 4.V 4.V 3.8V 3.V 3.3V BOTTOM 3.V 3.V 6μs PULSE WIDTH Tj = 2 C.. V DS, Drain-to-Source Voltage V) 3.V 6μs PULSE WIDTH Tj = C. V DS, Drain-to-Source Voltage V) Fig. Typical Output Characteristics Fig 2. Typical Output Characteristics.6.4 I D =.8A V GS = V T J = C.2 T J = 2 C. V DS = V 6μs PULSE WIDTH. 2. 2. 3. 3. 4. 4. V GS, Gate-to-Source Voltage V).8.6-6 -4-2 2 4 6 8 2 4 6 T J, Junction Temperature C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance vs. Temperature www.irf.com 3
I SD, Reverse Drain Current A) I D, Drain-to-Source Current A) C, Capacitance pf) V GS, Gate-to-Source Voltage V) C iss V GS = V, f = MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd C oss = C ds + C gd 4. 2.. 8. I D =.8A V DS = 2V V DS = 3V V DS =.V C oss 6. C rss 4. 2.. 2 3 4 6 7 8 V DS, Drain-to-Source Voltage V) Q G, Total Gate Charge nc) Fig. Typical Capacitance vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage OPERATION IN THIS AREA LIMITED BY R DS on) T J = C μsec msec msec T J = 2 C. V GS = V.3.4..6.7.8.9.. V SD, Source-to-Drain Voltage V) Fig 7. Typical Source-Drain Diode Forward Voltage T A = 2 C Tj = C Single Pulse... V DS, Drain-to-Source Voltage V) Fig 8. Maximum Safe Operating Area 4 www.irf.com
I D, Drain Current A) 6 V DS R D 4 R G V GS D.U.T. + - V DD 3 2 2 7 2 T A, Ambient Temperature C) Fig 9. Maximum Drain Current vs. Ambient Temperature Fig a. Switching Time Test Circuit V DS 9% V GS Pulse Width µs Duty Factor % V GS t don) t r t doff) t f Fig b. Switching Time Waveforms D =..2...2. Thermal Response Z thja ) CW.. SINGLE PULSE THERMAL RESPONSE ) Notes:. Duty Factor D = tt2 2. Peak Tj = P dm x Zthja + T A. E-6 E-.... t, Rectangular Pulse Duration sec) Fig. Typical Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com
R DSon), Drain-to -Source On Resistance m ) R DS on), Drain-to -Source On Resistance m ) 8 7 I D =.8A 4 6 4 3 3 Vgs = 4.V 4 3 2 T J = 2 C T J = 2 C 2 2 Vgs = V 2 4 6 8 2 4 6 8 2 2 2 V GS, Gate -to -Source Voltage V) I D, Drain Current A) Fig 2. Typical On-Resistance vs. Gate Voltage Fig 3. Typical On-Resistance vs. Drain Current Current Regulator Same Type as D.U.T. V GS Q GS Q G Q GD 2V.2 F K.3 F D.U.T. + V - DS V G V GS 3mA Charge I G I D Current Sampling Resistors Fig 4a. Basic Gate Charge Waveform Fig 4b. Gate Charge Test Circuit 6 www.irf.com
V GSth), Gate threshold Voltage V) Single Pulse Power W) 2.6 2.4 2.2 8 2..8.6.4 I D = μa I D = 2μA 6 4.2 2..8-7 - -2 2 7 2 T J, Temperature C ) Fig. Typical Threshold Voltage vs. Junction Temperature E-7 E-6 E- E-4 E-3 E-2 E- E+ Time sec) Fig 6. Typical Power vs. Time www.irf.com 7
, U U Micro3 SOT-23) Package Outline Dimensions are shown in millimeters inches) 6 B 6 A D 3 E E. [.6] M CBA 2 e e H 4 L c A A2 C. [.4] C A 3X b.2 [.8] M C B A NOTES: Recommended Footprint.972 DIMENSIONS SYMBOL MILLIMETERS INCHES MIN MAX MIN MAX A.89.2 A...4 A2.88.2 b.3. c.8.2 D 2.8 3.4 E 2. 2.64 E.2.4 e.9 BSC %6 e.9 BSC %6 L.4.6 L.4 REF REF L2.2 BSC BSC 8 8 L2.82.9 2.742 3X L 7.9. DIMENSIONING TOLERANCING PER ANSI Y4.M-994 2. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES]. 3. CONTROLLING DIMENSION: MILLIMETER. 4. DATUM PLANE H IS LOCATED AT THE MOLD PARTING LINE.. DATUM A AND B TO BE DETERMINED AT DATUM PLANE H. 6. DIMENSIONS D AND E ARE MEASURED AT DATUM PLANE H. DIMENSIONS DOES NOT INCLUDE MOLD PROTRUSIONS OR INTERLEAD FLASH. MOLD PROTRUSIONS OR INTERLEAD FLASH SHALL NOT EXCEED.2 MM [. INCH] PER SIDE. 7. DIMENSION L IS THE LEAD LENGTH FOR SOLDERING TO A SUBSTRATE. 8. OUTLINE CONFORMS TO JEDEC OUTLINE TO-236 AB. Micro3 SOT-23TO-236AB) Part Marking Information RWHV7KLVSDUWPDUNLQJLQIRUPDWLRQDSSOLHVWRGHYLFHVSURGXFHGDIWHU DATE CODE MARKING INSTRUCTIONS ; 2 % 8 7 7 3 2 7 2 ) ) 6 7 8 9 : ; < 2 ) % 8 : X * 2 7 + % ) * 3 ) ::,)3%<67,*,72)< :2. < < :. : % ; < = ::,)3%<77 N ) H G D ) Z H N R V Z WH = H D LF WK G H Y LQ R E H D H H K Q OLQ Z R K WH V + -. 3 R V D H UH < < % ) * + -. % Note: For the most current drawing please refer to IR website at: http:www.irf.compackage 8 www.irf.com :2. :. : ; < =
Micro3 Tape Reel Information Dimensions are shown in millimeters inches) 2..8 ).9.77 ) 4..6 ) 3.9.4 ).6.62 )..6 ).8.72 ).6.6 ).32. ).2.4 ) TR 3..39 ) 3.4.36 ) 8.3.326 ) 7.9.32 ) FEED DIRECTION 4..6 ) 3.9.4 )..43 ).9.36 ).3.3 ).2. ) 78. 7.8 ) MAX. 9.9.39 ) 8.4.33 ) NOTES:. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-48 EIA-4. Note: For the most current drawing please refer to IR website at: http:www.irf.compackage www.irf.com 9
Orderable part number Package Type Standard Pack Form Quantity Micro3 SOT-23) Tape and Reel 3 Note Qualification information Qualification level Moisture Sensitivity Level RoHS compliant Cons umer per JE DE C JE S D47F guidelines ) MS L Micro3 SOT-23) per IPCJE DE C J-S TD-2D ) Yes Qualification standards can be found at International Rectifier s web site http:www.irf.comproduct-inforeliability Higher qualification ratings may be available should the user have such requirements. Please contact your International Rectifier sales representative for further information: http:www.irf.comwhoto-callsalesrep Applicable version of JEDEC standard at the time of product release. Notes: Repetitive rating; pulse width limited by max. junction temperature. Pulse width 4μs; duty cycle 2%. ƒ Surface mounted on in square Cu board. Refer to application note #AN-994. Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: N. Sepulveda Blvd., El Segundo, California 924, USA Tel: 3) 22-7 TAC Fax: 3) 22-793 Visit us at www.irf.com for sales contact information.222 www.irf.com