Si5DS P-Channel.5-W,.-V (G-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A).5 at V GS = -.5 V ±.5 -.7 at V GS = -.5 V ±. at V GS = -. V ± FEATURES Halogen-free According to IEC 9-- Available TrenchFET Power MOSFETs:. V Rated T O- (SOT -) G D S T op V i e w Si5DS (A5)* * Marking Code Ordering Information: Si5DS-T Si5DS-T-E (Lead (Pb)-free) Si5DS-T-GE (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T A = 5 C, unless otherwise noted Parameter Symbol Limit Unit Drain-Source Voltage V DS - V Gate-Source Voltage V GS ± T A = 5 C ±.5 Continuous Drain Current (T J = 5 C) I D T A = 7 C ±. A Pulsed Drain Current I DM ± Continuous Source Current (Diode Conduction) a, b I S -. T A = 5 C Maximum Power Dissipation a, b.5 P D W T A = 7 C. Operating Junction and Storage Temperature Range T J, T stg - 55 to 5 C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambient a t 5 s R thja C/W Steady State a. Surface Mounted on FR board. b. t 5 s. * Pb containing terminations are not RoHS compliant, exemptions may apply. Document Number: 7 S9--Rev. E, -Feb-9
Si5DS SPECIFICATIONS T J = 5 C, unless otherwise noted Parameter Symbol Test Conditions Min. Limits Typ. Max. Unit Static Drain-Source Breakdown Voltage V (BR)DSS V GS = V, I D = - µa - Gate-Threshold Voltage V GS(th) V DS = V GS, I D = - 5 µa -.5 -. V Gate-Body Leakage I GSS V DS = V, V GS = ± V ± na V DS = - V, V GS = V - Zero Gate Voltage Drain Current I DSS V DS = - V, V GS = V, T J = 55 C - µa On-State Drain Current a I D(on) V DS - 5 V, V GS = -.5 V - V DS - 5 V, V GS = -.5 V - A V GS = -.5 V, I D = -.5 A..5 Drain-Source On-Resistance a R DS(on) V GS = -.5 V, I D = - A..7 Ω V GS = -. V, I D = - A.7. Forward Transconductance a g fs V DS = - 5 V, I D = -.5 A.5 S Diode Forward Voltage V SD I S = -. A, V GS = V -. V Dynamic b Total Gate Charge Q g 5 Gate-Source Charge Q gs V DS = - V, V GS = -.5 V, I D -.5 A nc Gate-Drain Charge Q gd Input Capacitance C iss 5 Output Capacitance C oss V DS = - V, V GS = V, f = MHz 75 pf Reverse Transfer Capacitance C rss Switching b Turn-On Time t d(on) t r V DD = - V, R L = Ω 5 Turn-Off Time t d(off) I D -. A, V GEN = -.5 V, R G = Ω 55 t f 9 5 ns a. For DESIGN AID ONLY, not subject to production testing. b. Pulse test: PW µs, duty cycle %. c. Switching time is essentially independent of operating temperature. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Document Number: 7 S9--Rev. E, -Feb-9
Si5DS TYPICAL CHARACTERISTICS 5 C, unless otherwse noted V GS =.5 thru.5 V V T C = - 55 C 5 C I D - Drain Current (A).5 V - Drain Current (A) I D 5 C V,.5 V.5..5..5..5..5..5..5 V DS - Drain-to-Source Voltage (V) Output Characteristics V GS - Gate-to-Source Voltage (V) Transfer Characteristics. - On-Resistance (Ω) R DS(on).5..5 V GS =. V. V GS =.5 V.5 V GS =.5 V C - Capacitance (pf) C iss C oss C rss I D - Drain Current (A) On-Resistance vs. Drain Current V DS - Drain-to-Source Voltage (V) Capacitance 5. - Gate-to-Source Voltage (V) V GS V DS = V I D =.5 A R DS(on) - On-Resistance (Normalized)... V GS =.5 V I D =.5 A Q g - T otal Gate Charge (nc) Gate Charge. - 5-5 5 5 75 5 5 T J - Junction Temperature ( C) On-Resistance vs. Junction Temperature Document Number: 7 S9--Rev. E, -Feb-9
Si5DS TYPICAL CHARACTERISTICS 5 C, unless otherwse noted.5 I S - Source Current (A) T J = 5 C T J = 5 C - On-Resistance (Ω) R DS(on).... I D =.5 A....... V SD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage V GS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage.. I D = 5 µa Variance (V) V GS(th)... Power (W) T A = 5 C -. -. - 5-5 5 5 75 5 5 T J - Temperature ( C) Threshold Voltage.. 5 Time (s) Single Pulse Power Normalized Effective Transient Thermal Impedance.. - Duty Cycle =.5...5. Single Pulse - - - 5 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient t t t. Duty Cycle, D = t. Per Unit Base = R thja = C/W. T JM - T A = P DM Z (t) thja maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see /ppg?7. P DM. Surface Mounted Document Number: 7 S9--Rev. E, -Feb-9
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