Automotive P-Channel 6 V (D-S) 75 C MOSFET SQ36AEES PRODUCT SUMMARY V DS (V) -6 R DS(on) () at V GS = - V 7 R DS(on) () at V GS = -4.5 V.3 I D (A) -.9 Configuration Single D 3 SOT-3 (TO-36) G Top View Marking Code: 9Cxxx S G P-Channel MOSFET S D FEATURES TrenchFET power MOSFET Typical ESD protection: 8 V AEC-Q qualified % R g and UIS tested Material categorization: for definitions of compliance please see www.vishay.com/doc?999 ORDERING INFORMATION Package Lead (Pb)-free and Halogen-free SOT-3 SQ36AEES-T-GE3 ABSOLUTE MAXIMUM RATINGS (T C = 5 C, unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS -6 Gate-Source Voltage V GS ± V Continuous Drain Current T C = 5 C -.8 I D T C = 5 C -.6 Continuous Source Current (Diode Conduction) I S -.5 A Pulsed Drain Current a I DM - Single Pulse Avalanche Current I AS -3 L = mh Single Pulse Avalanche Energy E AS 8.4 mj T C = 5 C Maximum Power Dissipation a P D T C = 5 C.67 W Operating Junction and Storage Temperature Range T J, T stg -55 to +75 C THERMAL RESISTANCE RATINGS PARAMETER SYMBOL LIMIT UNIT Junction-to-Ambient PCB Mount b R thja 75 Junction-to-Foot (Drain) R thjf 75 C/W Notes a. Pulse test; pulse width 3 μs, duty cycle %. b. When mounted on " square PCB (FR4 material). S5-8-Rev. A, -May-5 Document Number: 6997 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
SQ36AEES SPECIFICATIONS (T C = 5 C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage V DS V GS = V, I D = -5 μa -6 - - Gate-Source Threshold Voltage V GS(th) V DS = V GS, I D = -5 μa -.5 - -.5 Gate-Source Leakage I GSS V DS = V, V GS = ± V - - ± 3 ma V DS = V, V GS = ± 8 V - - ± Zero Gate Voltage Drain Current I DSS V GS = V V DS = -6 V, T J = 5 C - - -5 V GS = V V DS = -6 V - - - μa V GS = V V DS = -6 V, T J = 75 C - - -5 On-State Drain Current a I D(on) V GS = - V V DS -5 V - - - A V GS = - V I D = -.4 A - 3 7 Drain-Source On-State Resistance a R DS(on) V GS = - V I D = -.4 A, T J = 5 C - -.3 V GS = - V I D = -.4 A, T J = 75 C - -.35 V GS = -4.5 V I D = -.8 A - 8.3 Forward Transconductance b g fs V DS = - V, I D = - A - 5 - S Dynamic b Input Capacitance C iss - 45 6 Output Capacitance C oss V GS = V V DS = -3 V, f = MHz - 55 8 pf Reverse Transfer Capacitance C rss - 3 45 Total Gate Charge c Q g - 5 Gate-Source Charge c Q gs V GS = - V V DS = -3 V, I D = -6 A -.5 - nc Gate-Drain Charge c Q gd - 5 - Gate Resistance R g f = MHz 3. 4.3 5.4 Turn-On Delay Time c t d(on) - 9 Rise Time c t r V DD = -3 V, R L = - 9 Turn-Off Delay Time c t d(off) I D -.5 A, V GEN = - V, R g = - 4 3 ns Fall Time c t f - 4 6 Source-Drain Diode Ratings and Characteristics b Pulsed Current a I SM - - -3 A Forward Voltage V SD I F = -.5 A, V GS = V - -.8 -. V Notes a. Pulse test; pulse width 3 μs, duty cycle %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. V S5-8-Rev. A, -May-5 Document Number: 6997 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
SQ36AEES TYPICAL CHARACTERISTICS (T A = 5 C, unless otherwise noted) 8 V GS = V thru 5 8 I D - Drain Current (A) 6 4 V GS = 4 V I D - Drain Current (A) 6 4 T C = 5 C V GS = 3 V V GS = V 3 4 5 V DS -Drain-to-Source Voltage (V) Output Characteristics T C = 5 C T C = -55 C 4 6 8 V GS - Gate-to-Source Voltage (V) Transfer Characteristics.5 g fs - Transconductance (S) 8 6 4 T C = 5 C T C = -55 C T C = 5 C R DS(on) - On-Resistance (Ω).4.3. V GS = 4.5 V V GS = V 3 4 5 6 I D - Drain Current (A) Transconductance 4 6 8 I D - Drain Current (A) On-Resistance vs. Drain Current I GSS - Gate Current (μa) 4 6 8 T J = 5 C T J = 5 C 5 5 5 V GS - Gate-to-Source Voltage (V) Gate Current vs. Gate-Source Voltage S5-8-Rev. A, -May-5 3 Document Number: 6997 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
SQ36AEES TYPICAL CHARACTERISTICS (T A = 5 C, unless otherwise noted) 8. I D =.7 A C - Capacitance (pf) 6 4 C oss C iss R DS(on) - On-Resistance (Ω).8.6.4. T J = 5 C C rss 3 4 5 6 T J = 5 C 4 6 8 V DS -Drain-to-Source Voltage (V) V GS - Gate-to-Source Voltage (V) Capacitance On-Resistance vs. Gate-Source Voltage.. R DS(on) - On-Resistance (Normalized).7.4..8 I D =.7 A V GS = V V GS = 4.5 V R DS(on) - On-Resistance (Ω).8.6.4. I D =.9 A T J = 5 C.5-5 - 5 5 5 75 5 5 75 T J - Junction Temperature ( C) On-Resistance vs. Junction Temperature T J = 5 C 4 6 8 V GS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-Source Voltage R DS(on) - On-Resistance (Normalized)..7.4..8 I D =.9 A V GS = V V GS = 4.5 V V GS - Gate-to-Source Voltage (V) 8 6 4 I D = 6 A V DS = 3 V.5-5 - 5 5 5 75 5 5 75 T J - Junction Temperature ( C) On-Resistance vs. Junction Temperature 3 6 9 5 Q g -Total Gate Charge (nc) Gate Charge S5-8-Rev. A, -May-5 4 Document Number: 6997 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
SQ36AEES TYPICAL CHARACTERISTICS (T A = 5 C, unless otherwise noted) - 55 I D = ma I S - Source Current (A). T J = 5 C T J = 5 C V DS - Drain-to-Source Voltage (V) - 59-63 - 67-7....4.6.8.. V SD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage - 75-5 - 5 5 5 75 5 5 75 T J - Junction Temperature ( C) Drain Source Breakdown vs. Junction Temperature. I DM Limited V GS(th) - Variance (V).7 I D = 5 μa.4 I D = 5 ma -. -.5-5 - 5 5 5 75 5 5 75 T J - Temperature ( C) Threshold Voltage I D - Drain Current (A) Limited by R DS(on) * T C = 5 C Single Pulse BVDSS Limited.. V DS -Drain-to-Source Voltage (V) * V GS > minimum V GS at which R DS(on) is specified Safe Operating Area μs ms ms ms s s DC S5-8-Rev. A, -May-5 5 Document Number: 6997 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
SQ36AEES THERMAL RATINGS (T A = 5 C, unless otherwise noted) Normalized Effective Transient Thermal Impedance Duty Cycle =.5..5. Single Pulse 3. T JM - T A = P DM Z (t) thja 4. Surface Mounted. -4-3 - - 6 Square Wave Pulse Duration (s) Notes: Normalized Thermal Transient Impedance, Junction-to-Ambient P DM t t t. Duty Cycle, D = t. Per Unit Base = R thja = 75 C/W Normalized Effective Transient Thermal Impedance Duty Cycle =.5..5.. -4 Single Pulse -3 - - Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Note The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction-to-Ambient (5 C) - Normalized Transient Thermal Impedance Junction-to-Foot (5 C) are given for general guidelines only to enable the user to get a ball park indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size " x " x.6", double sided with oz. copper, % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions. maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?6997. S5-8-Rev. A, -May-5 6 Document Number: 6997 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
Work-In-Progress SOT-3 Ordering Information Ordering codes for the SQ rugged series power MOSFETs in the SOT-3 package: DATASHEET PART NUMBER OLD ORDERING CODE a NEW ORDERING CODE SQ3ES SQ3ES-T-GE3 SQ3ES-T_GE3 SQ33ES SQ33ES-T-GE3 SQ33ES-T_GE3 SQ38CES SQ38CES-T-GE3 SQ38CES-T_GE3 SQ39ES SQ39ES-T-GE3 SQ39ES-T_GE3 SQ3ES SQ3ES-T-GE3 SQ3ES-T_GE3 SQ35ES SQ35ES-T-GE3 SQ35ES-T_GE3 SQ38AES SQ38AES-T-GE3 SQ38AES-T_GE3 SQ39ADS - SQ39ADS-T_GE3 SQ35ES SQ35ES-T-GE3 SQ35ES-T_GE3 SQ337ES SQ337ES-T-GE3 SQ337ES-T_GE3 SQ348ES SQ348ES-T-GE3 SQ348ES-T_GE3 SQ35ES SQ35ES-T-GE3 SQ35ES-T_GE3 SQ36AEES SQ36AEES-T-GE3 SQ36AEES-T_GE3 SQ36ES - SQ36ES-T_GE3 SQ36ES - SQ36ES-T_GE3 SQ389ES - SQ389ES-T_GE3 SQ398ES - SQ398ES-T_GE3 Note a. Old ordering code is obsolete and no longer valid for new orders Revision: 6-Jun-6 Document Number: 65844 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
Package Information SOT-3 (TO-36): 3-LEAD b 3 E E S e e D A A mm C.4" Seating Plane C q.5 mm Gauge Plane Seating Plane A C L L Dim MILLIMETERS INCHES Min Max Min Max A.89..35.44 A..4.4 A.88..346.4 b.35.5.4. c.85 8.3.7 D.8 3.4 E..64.83 4 E..4.47.55 e.95 BSC.374 Ref e.9 BSC.748 Ref L.4.6.6.4 L.64 Ref.5 Ref S.5 Ref. Ref q 3 8 3 8 ECN: S-3946-Rev. K, 9-Jul- DWG: 5479 Document Number: 796 9-Jul- www.vishay.com
AN87 Mounting LITTLE FOOT SOT-3 Power MOSFETs Wharton McDaniel Surface-mounted LITTLE FOOT power MOSFETs use integrated circuit and small-signal packages which have been been modified to provide the heat transfer capabilities required by power devices. Leadframe materials and design, molding compounds, and die attach materials have been changed, while the footprint of the packages remains the same. ambient air. This pattern uses all the available area underneath the body for this purpose. 4.9 See Application Note 86, Recommended Minimum Pad Patterns With Outline Drawing Access for MOSFETs, (http://www.vishay.com/doc?786), for the basis of the pad design for a LITTLE FOOT SOT-3 power MOSFET footprint. In converting this footprint to the pad set for a power device, designers must make two connections: an electrical connection and a thermal connection, to draw heat away from the package..59.5.394..37.95.8.5 5 3.8 FIGURE. Footprint With Copper Spreading The electrical connections for the SOT-3 are very simple. Pin is the gate, pin is the source, and pin 3 is the drain. As in the other LITTLE FOOT packages, the drain pin serves the additional function of providing the thermal connection from the package to the PC board. The total cross section of a copper trace connected to the drain may be adequate to carry the current required for the application, but it may be inadequate thermally. Also, heat spreads in a circular fashion from the heat source. In this case the drain pin is the heat source when looking at heat spread on the PC board. Since surface-mounted packages are small, and reflow soldering is the most common way in which these are affixed to the PC board, thermal connections from the planar copper to the pads have not been used. Even if additional planar copper area is used, there should be no problems in the soldering process. The actual solder connections are defined by the solder mask openings. By combining the basic footprint with the copper plane on the drain pins, the solder mask generation occurs automatically. Figure shows the footprint with copper spreading for the SOT-3 package. This pattern shows the starting point for utilizing the board area available for the heat spreading copper. To create this pattern, a plane of copper overlies the drain pin and provides planar copper to draw heat from the drain lead and start the process of spreading the heat so it can be dissipated into the A final item to keep in mind is the width of the power traces. The absolute minimum power trace width must be determined by the amount of current it has to carry. For thermal reasons, this minimum width should be at least. inches. The use of wide traces connected to the drain plane provides a low-impedance path for heat to move away from the device. Document Number: 7739 6-Nov-3 www.vishay.com
Application Note 86 RECOMMENDED MINIMUM PADS FOR SOT-3.37 (.95). (.559).9 (.74) 6 (.69).49 (.45).53 (.34).97 (.459) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index APPLICATION NOTE Document Number: 769 www.vishay.com Revision: -Jan-8 5
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