N-Channel 4-V (D-S) 75 C MOSFET SUP/SUB85N4-4 PRODUCT SUMMARY V (BR)DSS (V) r DS(on) ( ) (A) 4.4 @ V GS = V 85 a TO-22AB D TO-263 G DRAIN connected to TAB G D S Top View Ordering Information SUP85N4-4 SUP85N4-4 E3 (Lead (Pb)-Free) G D S Top View Ordering Information SUB85N4-4 SUB85N4-4 E3 (Lead (Pb)-Free) S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (T C = 25 C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Unit Drain-Source Voltage V DS 4 Gate-Source Voltage V GS 2 V Continuous Drain Current (T J = 75 C) T C = 25 C 85 a T C = 25 C 85 a A Pulsed Drain Current M 24 Avalanche Current I AR 7 Repetitive Avalanche Energy b L =. mh E AR 2 mj Maximum Power Dissipation b T C = 25 C (TO-22AB and TO-263) T A = 25 C (TO-263) d P D 25 c 3.75 W Operating Junction and Storage Temperature Range T J, T stg 55 to 75 C THERMAL RESISTANCE RATINGS Junction-to-Ambient t t Parameter Symbol Limit Unit PCB Mount (TO-263) d Free Air (TO-22AB) 4 R thja 62.5 C/W Junction-to-Case R thjc.6 Notes a. Package limited. b. Duty cycle %. c. See SOA curve for voltage derating. d. When mounted on square PCB (FR-4 material). S-426 Rev. C, 5-Jul-4
SUP/SUB85N4-4 SPECIFICATIONS (T J =25 C UNLESS OTHERWISE NOTED) Static Parameter Symbol Test Condition Min Typ Max Unit Drain-Source Breakdown Voltage V (BR)DSS V DS = V, = 25 A 4 Gate-Threshold Voltage V GS(th) V DS = V GS, = 25 A 2 4 V Gate-Body Leakage I GSS V DS = V, V GS = 2 V na V DS = 4 V, V GS = V Zero Gate Voltage Drain Current SS V DS = 4 V, V GS = V, T J = 25 C 5 A V DS = 4 V, V GS = V, T J = 75 C 25 On-State Drain Current a (on) V DS 5 V, V GS = V 2 A V GS = V, = 3 A.3.4 Drain-Source On-State Resistance a r DS(on) V GS = V, = 3 A, T J = 25 C.55 DS(on) V GS = V, = 3 A, T J = 75 C.7 Forward Transconductance a g fs V DS = 5 V, = 3 A 3 S Dynamic b Input Capacitance C iss 762 Output Capacitance C oss V GS = V, V DS = 25 V, f = MHz 325 pf Reverse Transfer Capacitance C rss 7 Total Gate Charge c Q g 6 25 Gate-Source Charge c Q gs V DS = 3 V, V GS = V, = 85 A 4 nc Gate-Drain Charge c Q gd DS, GS, D 55 Turn-On Delay Time c t d(on) 2 35 Rise Time c t r V DD = 3 V, R L =.47 5 75 Turn-Off Delay Time c t d(off) 85 A, V GEN = V, R g = 2.5 75 5 Fall Time c t f 85 3 ns Source-Drain Diode Ratings and Characteristics (T C = 25 C) b Continuous Current I S 85 Pulsed Current I SM 24 A Forward Voltage a V SD I F = 85 A, V GS = V..4 V Reverse Recovery Time t rr I Peak Reverse Recovery Current I F = 85 A, di/dt = A/ s RM(REC) 6 9 ns 2.6 4 A Reverse Recovery Charge Q rr.8.5 C Notes a. Pulse test; pulse width 3 s, duty cycle 2%. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. 2 S-426 Rev. C, 5-Jul-4
SUP/SUB85N4-4 TYPICAL CHARACTERISTICS (25 C UNLESS NOTED) 25 Output Characteristics 25 Transfer Characteristics V GS = thru 7 V 2 6 V 2 5 5 T C = 25 C 5 5 V 4 V 2 4 6 8 5 25 C 55 C 2 3 4 5 6 7 V DS Drain-to-Source Voltage (V) V GS Gate-to-Source Voltage (V) 25 Transconductance T C = 55 C.5 On-Resistance vs. Drain Current Transconductance (S) g fs 2 5 5 25 C 25 C r DS(on) On-Resistance ( ).4.3.2. V GS = V 2 4 6 8 2. 2 4 6 8 2 2 Capacitance 2 Gate Charge C Capacitance (pf) 8 6 4 2 C oss C iss Gate-to-Source Voltage (V) V GS 6 2 8 4 V DS = 3 V = 85 A C rss 8 6 24 32 4 V DS Drain-to-Source Voltage (V) 6 2 8 24 3 Q g Total Gate Charge (nc) S-426 Rev. C, 5-Jul-4 3
SUP/SUB85N4-4 TYPICAL CHARACTERISTICS (25 C UNLESS NOTED) 2. On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage.6 V GS = V = 3 A r DS(on) On-Resiistance (Normalized).2.8.4 Source Current (A) I S T J = 5 C T J = 25 C. 5 25 25 5 75 25 5 75.3.6.9.2 T J Junction Temperature ( C) V SD Source-to-Drain Voltage (V) Avalanche Current vs. Time 55 Drain Source Breakdown vs. Junction Temperature (a) av I AV (A) @ T A = 5 C I AV (A) @ T A = 25 C V(BR)DSS (V) 5 47 43 = 25 A 39...... t in (Sec) 35 5 25 25 5 75 25 5 75 T J Junction Temperature ( C) 4 S-426 Rev. C, 5-Jul-4
SUP/SUB85N4-4 THERMAL RATINGS Maximum Avalanche and Drain Current vs. Case Temperature Safe Operating Area 8 s s 6 4 Limited by r DS(on) ms ms ms dc 2 T C = 25 C Single Pulse 25 5 75 25 5 75 T C Ambient Temperature ( C).. V DS Drain-to-Source Voltage (V) 2 Normalized Thermal Transient Impedance, Junction-to-Case Normalized Effective Transient Thermal Impedance. Duty Cycle =.5.2..5.2 Single Pulse. 4 3 2 Square Wave Pulse Duration (sec) S-426 Rev. C, 5-Jul-4 5
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