Type IPD36N4L G OptiMOS 3 Power-Transistor Features Fast switching MOSFET for SMPS Optimized technology for DC/DC converters Qualified according to JEDEC ) for target applications Product Summary V DS 4 V R DS(on),max 3.6 mω I D 9 A N-channel, logic level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) % Avalanche tested Pb-free plating; RoHS compliant Type IPD36N4L G Pb-free plating; RoHS compliant Package Marking PG-TO252-3 36N4L Maximum ratings, at T j =25 C, unless otherwise specified Parameter Symbol Conditions Value Unit Continuous drain current I D V GS = V, T C =25 C 9 A V GS = V, T C = C 87 V GS =4.5 V, T C =25 C 9 V GS =4.5 V, T C = C 75 Pulsed drain current 2) I D,pulse T C =25 C 4 Avalanche current, single pulse 3) I AS T C =25 C 9 Avalanche energy, single pulse E AS I D =9 A, R GS =25 Ω 55 mj Gate source voltage V GS ±2 V ) J-STD2 and JESD22 Rev.. page 27-2-6
IPD36N4L G Maximum ratings, at T j =25 C, unless otherwise specified Parameter Symbol Conditions Value Unit Power dissipation P tot T C =25 C 94 W Operating and storage temperature T j, T stg -55... 75 C IEC climatic category; DIN IEC 68-55/75/56 Parameter Symbol Conditions Values Unit min. typ. max. Thermal characteristics Thermal resistance, junction - case R thjc - -.6 K/W SMD version, device on PCB R thja minimal footprint - - 75 6 cm² cooling area 4) - - 5 Electrical characteristics, at T j =25 C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS = V, I D = ma 4 - - V Gate threshold voltage V GS(th) V DS =V GS, I D =45 µa.2-2 Zero gate voltage drain current I DSS V DS =4 V, V GS = V, T j =25 C -. µa V DS =4 V, V GS = V, T j =25 C - Gate-source leakage current I GSS V GS =2 V, V DS = V - na Drain-source on-state resistance R DS(on) V GS =4.5 V, I D =9 A - 3.9 4.9 mω V GS = V, I D =9 A - 3. 3.6 Gate resistance R G -.6 - Ω Transconductance g fs V DS >2 I D R DS(on)max, I D =9 A 85 7 - S 2) See figure 3 for more detailed information 3) See figure 3 for more detailed information 4) Device on 4 mm x 4 mm x.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 7 µm thick) copper area for drain connection. PCB is vertical in still air. Rev.. page 2 27-2-6
IPD36N4L G Parameter Symbol Conditions Values Unit min. typ. max. Dynamic characteristics Input capacitance C iss - 47 63 pf Output capacitance C oss V GS = V, V DS =2 V, f = MHz - 3 Reverse transfer capacitance C rss - 54 - Turn-on delay time t d(on) - 9.3 - ns Rise time t r V DD =2 V, V GS = V, - 5.4 - Turn-off delay time t d(off) I D =3 A, R G =.6 Ω - 37 - Fall time t f - 6. - Gate Charge Characteristics 5) Gate to source charge Q gs - 4 - nc Gate charge at threshold Q g(th) - 7.4 - Gate to drain charge Q gd V DD =2 V, I D =3 A, - 6. - Switching charge Q sw V GS = to V - 3 - Gate charge total Q g - 59 78 Gate plateau voltage V plateau - 3. - V Gate charge total Q g V DD =2 V, I D =3 A, V GS = to 4.5 V - 28 38 nc Gate charge total, sync. FET Q g(sync) V DS =. V, V GS = to V - 55 - Output charge Q oss V DD =2 V, V GS = V - 37 - Reverse Diode Diode continuous forward current I S - - 78 A T C =25 C Diode pulse current I S,pulse - - 4 Diode forward voltage V SD V GS = V, I F =9 A, T j =25 C -.92.2 V Reverse recovery charge Q rr V R =2 V, I F =I S, di F /dt =4 A/µs - 45 - nc 5) See figure 6 for gate charge parameter definition Rev.. page 3 27-2-6
IPD36N4L G Power dissipation 2 Drain current P tot =f(t C ) I D =f(t C ); V GS V 8 8 6 6 P tot [W] 4 4 2 2 5 5 2 5 5 2 T C [ C] T C [ C] 3 Safe operating area 4 Max. transient thermal impedance I D =f(v DS ); T C =25 C; D = Z thjc =f(t p ) parameter: t p parameter: D =t p /T 3 limited by on-state resistance µs µs 2 µs DC.5 ms ms Z thjc [K/W].2...5.2. single pulse - - V DS [V] 2. -6-5 -4-3 -2 - t p [s] Rev.. page 4 27-2-6
IPD36N4L G 5 Typ. output characteristics 6 Typ. drain-source on resistance I D =f(v DS ); T j =25 C R DS(on) =f(i D ); T j =25 C parameter: V GS parameter: V GS 32 2 3 V 28 V 5 V 4.5 V 3.2 V 24 2 6 2 8 4 V 3.5 V R DS(on) [mω] 8 6 4 3.5 V 4 V 4.5 V 5 V V 3.2 V 4 3 V 2.8 V 2 3 V DS [V] 2 2 4 6 8 7 Typ. transfer characteristics 8 Typ. forward transconductance I D =f(v GS ); V DS >2 I D R DS(on)max g fs =f(i D ); T j =25 C parameter: T j 2 24 6 2 6 2 g fs [S] 2 8 8 4 75 C 25 C 4 2 3 4 5 V GS [V] 4 8 2 6 2 Rev.. page 5 27-2-6
IPD36N4L G 9 Drain-source on-state resistance Typ. gate threshold voltage R DS(on) =f(t j ); I D =9 A; V GS = V V GS(th) =f(t j ); V GS =V DS ; I D =25 µa 8 2.5 7 6 2 R DS(on) [mω] 5 4 3 98 % typ V GS(th) [V].5 2.5-6 -2 2 6 4 8 T j [ C] -6-2 2 6 4 8 T j [ C] Typ. capacitances 2 Forward characteristics of reverse diode C =f(v DS ); V GS = V; f = MHz I F =f(v SD ) parameter: T j 4 Ciss 25 C, 98% 3 Coss 25 C 75 C, 98% C [pf] I F [A] 75 C 2 Crss 2 3 4 V DS [V]..5..5 2. V SD [V] Rev.. page 6 27-2-6
IPD36N4L G 3 Avalanche characteristics 4 Typ. gate charge I AS =f(t AV ); R GS =25 Ω parameter: T j(start) V GS =f(q gate ); I D =3 A pulsed parameter: V DD 2 C 25 C 8 V 2 V 32 V 5 C 8 I AV [A] z V GS [V] 6 4 2 - t AV [µs] 2 3 2 3 4 5 6 7 Q gate [nc] 5 Drain-source breakdown voltage 6 Gate charge waveforms V BR(DSS) =f(t j ); I D = ma 45 V GS 4 Q g V BR(DSS) [V] 35 3 V gs(th) 25 Q g(th) Q sw Q gate 2-6 -2 2 6 4 8 T j [ C] Q gs Q gd Rev.. page 7 27-2-6
IPD36N4L G Package Outline PG-TO252-3 Footprint: Packaging: Rev.. page 8 27-2-6
IPD36N4L G Published by Infineon Technologies AG 8726 Munich, Germany 27 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev.. page 9 27-2-6