Freescale Semiconductor Technical Data RF Power LDMOS Transistors Enhancement--Mode Lateral MOSFETs These 90 W RF power LDMOS transistors are designed for wideband RF power amplifiers covering the frequency range of 470 to 860 MHz. Typical Performance (Narrowband Test Circuit): V DD =50Vdc,I DQ = 350 ma, 64 QAM, Input Signal PAR = 9.5 db @ 0.0% Probability on CCDF. Document Number: MMRF8N Rev. 0, 7/4 MMRF8NR MMRF8NBR Signal Type P out (W) f (MHz) G ps (db) D (%) ACPR (dbc) DVB--T (8k OFDM) 8 Avg. 860 22.0 28.5 --62.0 Typical Performance (Broadband Reference Circuit): V DD =50Vdc, I DQ = 450 ma, 64 QAM, Input Signal PAR = 9.5 db @ 0.0% Probability on CCDF. Signal Type P out (W) f (MHz) G ps (db) D (%) Output Signal PAR (db) IMD Shoulder (dbc) DVB--T (8k OFDM) 8 Avg. 470 2.6 26.8 8.6 --3.8 650 22.9 28.0 8.7 --34.4 860 2.9 28.3 7.9 --29.2 470-860 MHz, 90 W, 50 V BROADBAND RF POWER LDMOS TRANSISTORS TO -270WB -4 PLASTIC MMRF8NR Features Capable of Handling : VSWR, All Phase Angles @ 50 Vdc, 860 MHz, 90 W CW Output Power Characterized with Series Equivalent Large--Signal Impedance Parameters Internally Input Matched for Ease of Use Qualified Up to a Maximum of 50 V DD Operation Integrated ESD Protection Excellent Thermal Stability Greater Negative Gate--Source Voltage Range for Improved Class C Operation 225 C Capable Plastic Package In Tape and Reel. R Suffix = 50 Units, 44 mm Tape Width, 3--inch Reel. Gate A TO -272WB -4 PLASTIC MMRF8NBR PARTS ARE SINGLE -ENDED Drain A Table. Maximum Ratings Rating Symbol Value Unit Gate B Drain B Drain--Source Voltage V DSS --0.5, + Vdc Gate--Source Voltage V GS --6.0, + Vdc Storage Temperature Range T stg -- 65 to +50 C Case Operating Temperature T C 50 C Operating Junction Temperature (,2) T J 225 C (Top View) Note: Exposed backside of the package is the source terminal for the transistor. Figure. Pin Connections Table 2. Thermal Characteristics Characteristic Symbol Value (2,3) Unit Thermal Resistance, Junction to Case Case Temperature 76 C, 8 W CW, 50 Vdc, I DQ = 350 ma, 860 MHz Case Temperature 80 C, 90 W CW, 50 Vdc, I DQ = 350 ma, 860 MHz R JC 0.79 0.82 C/W. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN955., 4. All rights reserved.
Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22--A4) 2 (0--4000 V) Machine Model (per EIA/JESD22--A5) B (--400 V) Charge Device Model (per JESD22--C) IV (>00 V) Table 4. Moisture Sensitivity Level Test Methodology Rating Package Peak Temperature Unit Per JESD22--A3, IPC/JEDEC J--STD--0 3 260 C Table 5. Electrical Characteristics (T A =25 C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Off Characteristics Gate--Source Leakage Current (V GS =5Vdc,V DS =0Vdc) Drain--Source Breakdown Voltage (I D =50mA,V GS =0Vdc) Zero Gate Voltage Drain Leakage Current (V DS =50Vdc,V GS =0Vdc) Zero Gate Voltage Drain Leakage Current (V DS = 0 Vdc, V GS =0Vdc) On Characteristics Gate Threshold Voltage (V DS =Vdc,I D = 0 Adc) Gate Quiescent Voltage (V DD =50Vdc,I D = 350 madc, Measured in Functional Test) Drain--Source On--Voltage (V GS =Vdc,I D =0.5Adc) Dynamic Characteristics Reverse Transfer Capacitance (V DS =50Vdc 30 mv(rms)ac @ MHz, V GS =0Vdc) Output Capacitance (V DS =50Vdc 30 mv(rms)ac @ MHz, V GS =0Vdc) Input Capacitance () (V DS =50Vdc,V GS =0Vdc 30 mv(rms)ac @ MHz) I GSS 0.5 Adc V (BR)DSS Vdc I DSS Adc I DSS Adc V GS(th) 0.9.6 2.4 Vdc V GS(Q) 2.0 2.7 3.5 Vdc V DS(on) 0.2 Vdc C rss 4 pf C oss 65.4 pf C iss 59 pf Functional Tests (In Freescale DVB--T Narrowband Test Fixture, 50 ohm system) V DD =50Vdc,I DQ = 350 ma, P out =8WAvg., f = 860 MHz, DVB--T (8k OFDM) Single Channel. ACPR measured in 7.6 MHz Channel Bandwidth @ 4 MHz Offset @ 4 khz Bandwidth. Power Gain G ps 2.0 22.0 24.0 db Drain Efficiency D 27.5 28.5 % Adjacent Channel Power Ratio ACPR --62.0 --60.0 dbc Input Return Loss IRL -- 4 -- 9 db. Part internally input matched. 2
V BIAS + C R C2 C3 C8 C9 + C V SUPPLY Z8 Z RF INPUT Z C5 C4 R2 Z2 Z3 Z4 Z5 Z6 Z7 C6 C7 DUT Z9 Z2 Z3 C5 Z4 C Z5 C2 Z6 RF OUTPUT Z7 Z8 C4 C3 Z + C6 C7 C8 Z Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 0.266 0.067 Microstrip 0.33 0.067 Microstrip 0.598 0.067 Microstrip 0.35 0.276 Microstrip 0.054 0.669 Microstrip 0.49 0.669 Microstrip 0.256 0.669 Microstrip 0.986 0.07 Microstrip 0. 0.57 Microstrip Z, Z.292 0.079 Microstrip Z2 0.680 0.57 Microstrip Z3 0.32 0.7 Microstrip Z4 0.705 0.7 Microstrip Z5 0.59 0.7 Microstrip Z6 0.40 0.067 Microstrip Z7 0.077 0.067 Microstrip Z8 0.63 0.067 Microstrip Figure 2. MMRF8NR(NBR) 860 MHz Narrowband Test Circuit Schematic Table 6. MMRF8NR(NBR) 860 MHz Narrowband Test Circuit Component Designations and Values Part Description Part Number Manufacturer C 22 F, 35 V Tantalum Capacitor T49X226K035AT Kermet C2, C9, C7 F, 50 V Chip Capacitors GRM55DR6H6KA88L Murata C3, C5, C8, C4, C6 43 pf Chip Capacitors ATC0B430JT500XT ATC C4 6.2 pf Chip Capacitor ATC0B6R2BT500XT ATC C6 2.2 pf Chip Capacitor ATC0B2R2JT500XT ATC C7 9. pf Chip Capacitor ATC0B9RCT500XT ATC C, C8 2 F, 0 V Electrolytic Capacitors EEVFK2A22M Panasonic--ECG C, C5 7.5 pf Chip Capacitors ATC0B7R5CT500XT ATC C2 3.0 pf Chip Capacitor ATC0B3R0CT500XT ATC C3 0.7 pf Chip Capacitor ATC0B0R7BT500XT ATC R k, /4 W Chip Resistor CRCW6KOJNEA Vishay R2, /4 W Chip Resistor CRCW6ROJNEA Vishay PCB 0.030, r =3.5 RF--35 Taconic 3
-- C C C8 C9 R C2 C3 C4 R2 C C4 C5 C6 C7 CUT OUT AREA C5 C2 C3 C6 C7 C8 -- Figure 3. MMRF8NR(NBR) 860 MHz Narrowband Test Circuit Component Layout 4
TYPICAL CHARACTERISTICS C, CAPACITANCE (pf) 00 0 Measured with 30 mv(rms)ac @ MHz, V GS =0Vdc 0 30 40 50 V DS, DRAIN--SOURCE VOLTAGE (VOLTS) Figure 4. Capacitance versus Drain -Source Voltage C iss C oss C rss G ps, POWER GAIN (db) 24 23 22 2 V DD =50Vdc,I DQ = 350 ma, f = 860 MHz G ps 9 8 D 7 0 0 0 P out, OUTPUT POWER (WATTS) Figure 5. CW Power Gain and Drain Efficiency versus Output Power (Narrowband Test Circuit) 70 60 50 40 30 D, DRAIN EFFICIENCY (%) P out, OUTPUT POWER (dbm) 56 55 54 53 52 5 P3dB = 5.28 dbm (34.3 W) P2dB = 5.06 dbm (27.6 W) PdB = 50.7 dbm (7.5 W) 50 9 49 8 50 V 45 V 48 7 V DD =50Vdc,I DQ = 350 ma, f = 860 MHz 47 6 V DD =40V --6 --5 --4 --3 --2 -- 0 2 3 4 30 40 50 60 70 80 90 0 30 40 50 P in, INPUT POWER (dbm) Ideal Actual Figure 6. CW Output Power versus Input Power (Narrowband Test Circuit) G ps, POWER GAIN (db) 25 24 23 22 2 I DQ = 350 ma, f = 860 MHz P out, OUTPUT POWER (WATTS) Figure 7. CW Power Gain versus Output Power (Narrowband Test Circuit) 25 24 V DD =50Vdc,I DQ = 350 ma, f = 860 MHz T C =--30_C 70 60 G ps, POWER GAIN (db) 23 22 2 9 T C =--30_C 85_C 25_C G ps D 85_C 25_C 50 40 30 D, DRAIN EFFICIENCY (%) 8 P out, OUTPUT POWER (WATTS) 0 0 0 Figure 8. CW Power Gain and Drain Efficiency versus Output Power (Narrowband Test Circuit) 5
TYPICAL CHARACTERISTICS TWO -TONE (NARROWBAND TEST CIRCUIT) IMD, INTERMODULATION DISTORTION (dbc) -- -- --30 --40 --50 --60 --70 V DD =50Vdc,I DQ = 350 ma, f = 854 MHz f2 = 860 MHz, Two--Tone Measurements 3rd Order 5th Order 7th Order 0 0 IMD, INTERMODULATION DISTORTION (dbc) -- --25 --30 --35 --40 --45 --50 --55 --60 --65 V DD =50Vdc,P out = 90 W (PEP), I DQ = 350 ma f = 860 MHz, Two--Tone Measurements 3rd Order 5th Order 7th Order 90 P out, OUTPUT POWER (WATTS) PEP TWO--TONE SPACING (MHz) Figure 9. Intermodulation Distortion Products versus Output Power Figure. Intermodulation Distortion Products versus Two -Tone Spacing G ps, POWER GAIN (db) 23.5 23 22.5 22 2.5 2.5 I DQ = 450 ma 350 ma 300 ma 250 ma V DD = 50 Vdc, f = 854 MHz, f2 = 860 MHz Two--Tone Measurements, 6 MHz Tone Spacing 0 0 P out, OUTPUT POWER (WATTS) PEP Figure. Two -Tone Power Gain versus Output Power IMD, THIRD ORDER INTERMODULATION DISTORTION (dbc) -- -- --30 --40 --50 --60 V DD = 50 Vdc, f = 854 MHz, f2 = 860 MHz Two--Tone Measurements, 6 MHz Tone Spacing I DQ = 250 ma 350 ma 300 ma 450 ma P out, OUTPUT POWER (WATTS) PEP 0 Figure 2. Third Order Intermodulation Distortion versus Output Power 0 6
TYPICAL CHARACTERISTICS DVB -T (8k OFDM) PROBABILITY (%) 0 0. 0.0 0.00 0.000 0 DVB--T (8k OFDM) 64 QAM Data Carrier Modulation 5 Symbols 2 4 6 8 2 (db) -- --30 --40 --50 --60 --70 --80 --90 --0 -- --5 4kHzBW 7.6 MHz ACPR Measured at 4 MHz Offset from Center Frequency 4kHzBW DVB--T (8k OFDM) 64 QAM Data Carrier Modulation, 5 Symbols --4 --3 --2 -- 0 2 3 4 5 PEAK--TO--AVERAGE (db) f, FREQUENCY (MHz) Figure 3. Single -Carrier DVB -T (8k OFDM) Figure 4. DVB -T (8k OFDM) Spectrum G ps, POWER GAIN (db) 23 22.5 22 2.5 I DQ = 450 ma 350 ma 300 ma 250 ma 2 V DD = 50 Vdc, f = 860 MHz DVB--T (8k OFDM), 64 QAM Data Carrier Modulation, 5 Symbols.5 40 P out, OUTPUT POWER (WATTS) AVG. Figure 5. Single -Carrier DVB -T (8k OFDM) Power Gain versus Output Power (Narrowband Test Circuit) ACPR, ADJACENT CHANNEL POWER RATIO (dbc) --54 --56 --58 --60 --62 V DD = 50 Vdc, f = 860 MHz DVB--T (8k OFDM), 64 QAM Data Carrier Modulation, 5 Symbols I DQ = 250 ma 300 ma --64 350 ma --66 450 ma --68 40 P out, OUTPUT POWER (WATTS) AVG. Figure 6. Single -Carrier DVB -T (8k OFDM) ACPR versus Output Power (Narrowband Test Circuit) G ps, POWER GAIN (db) D, DRAIN EFFICIENCY (%) 50 --45 V DD =50Vdc,I DQ = 350 ma --30_C f = 860 MHz, DVB--T (8k OFDM) 40 64 QAM Data Carrier Modulation --50 5 Symbols D 25_C 30 --55 85_C G ps 85_C T C =--30_C 25_C ACPR 0 --70 40 P out, OUTPUT POWER (WATTS) AVG. Figure 7. Single -Carrier DVB -T (8k OFDM) Drain Efficiency, Power Gain and ACPR versus Output Power (Narrowband Test Circuit) --60 --65 ACPR, ADJACENT CHANNEL POWER RATIO (dbc) 7
TYPICAL CHARACTERISTICS 9 8 V DD =50Vdc P out =8WAvg. D = 28.5% MTTF (HOURS) 7 6 5 4 90 30 50 70 90 T J, JUNCTION TEMPERATURE ( C) 2 230 MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 250 Figure 8. MTTF versus Junction Temperature - CW f MHz V DD =50Vdc,I DQ = 350 ma, P out = 8 W Average Z source Z load 860.58 -- j0.89 3.5 -- j3.98 Z source = Test circuit impedance as measured from gate to ground. Z load = Test circuit impedance as measured from drain to ground. Input Matching Network Device Under Test Output Matching Network Z source Z load Figure 9. Series Equivalent Source and Load Impedance (Narrowband Test Circuit) 8
470-860 MHz BROADBAND REFERENCE CIRCUIT V DD =50Vdc,I DQ = 450 ma, Channel Bandwidth = 8 MHz, Input Signal PAR = 9.5 db @ 0.0% Probability on CCDF. Signal Type P out (W) f (MHz) G ps (db) D (%) Output PAR (db) IMD Shoulder (dbc) DVB--T (8k OFDM) 4.5 Avg. 470 2.5.6 9.9 --37.5 650 22.8.8 9.9 --4.7 860 2.8.9 9.8 --40.3 9Avg. 470 2.6 8.2 9.5 --37.4 650 22.8 8.6 9.7 --40.2 860 2.8 8.9 9.5 --39.0 8 Avg. 470 2.6 26.8 8.6 --3.8 650 22.9 28.0 8.7 --34.4 860 2.9 28.3 7.9 --29.2 R V DD V GG C4 C5 C6 C7 C3 C C4 C5 C7 C Q C9 C2 C2 C6 C8 C C3 C8 C9 C Figure. MMRF8NR(NBR) 470-860 MHz Broadband 2 3 Compact Reference Circuit Component Layout 9
470-860 MHz BROADBAND REFERENCE CIRCUIT Table 7. MMRF8NR(NBR) 470-860 MHz Broadband 2 3 Reference Circuit Component Designations and Values Part Description Part Number Manufacturer C, C2 0 pf Chip Capacitors ATC0BJT500XT ATC C2.8 pf Chip Capacitor ATC0BR8BT500XT ATC C3 6.2 pf Chip Capacitor ATC0B6R2BT500XT ATC C4, C5, C6 3 pf Chip Capacitors ATC0B30JT500XT ATC C7, C8, C 2.2 pf Chip Capacitors ATC0B2R2JT500XT ATC C9 5 pf Chip Capacitor ATC0B50JT500XT ATC C 3.9 pf Chip Capacitor ATC0B3R9CT500XT ATC C3 47 F, 6 V Tantalum Capacitor T49D476K06AS Kemet C4, C7, C9 2.2 F, 0 V Chip Capacitors C3225X7R2A225KT TDK C5, C6, C8 2 pf Chip Capacitors ATC0B22JT0XT ATC C 470 F, 63 V Electrolytic Capacitor MCGPR63V477M3X26--RH Multicomp Q RF High Power Transistor MRF6V3090NBR Freescale R, /4 W Chip Resistor CRCW6RJ Vishay PCB Rogers RO4350B, 0.030, r =3.66 MTL
TYPICAL CHARACTERISTICS 470-860 MHz BROADBAND REFERENCE CIRCUIT G ps, POWER GAIN (db) 24 23 22 2 9 V DD =50Vdc,I DQ = 450 ma, DVB--T (8k OFDM) 64 QAM Data Carrier Modulation, 5 Symbols G ps D P out =4.5W 9W 8 W 8 W 9W 4.5 W 60 50 40 30 D, DRAIN EFFICIENCY (%) 8 0 450 500 550 600 650 700 750 800 850 900 f, FREQUENCY (MHz) Figure 2. Single -Carrier DVB -T (8k OFDM) Power Gain and Drain Efficiency versus Frequency (Broadband Reference Circuit) OUTPUT PAR (db) 2 9 8 7 6 5 4 3 450 V DD =50Vdc,I DQ = 450 ma, DVB--T (8k OFDM) 64 QAM Data Carrier Modulation, 5 Symbols PAR P out =4.5W --30 IMD () 8 W --35 9W --40 4.5 W --45 495 540 585 630 675 7 765 8 855 900 f, FREQUENCY (MHz) () Intermodulation distortion shoulder measurement made using delta marker at 4.2 MHz offset from center frequency. Figure 22. Single -Carrier DVB -T (8k OFDM) Output PAR and IMD Shoulder versus Frequency (Broadband Reference Circuit) 9W 8 W 0 --5 -- --5 -- --25 IMD, INTERMODULATION DISTORTION SHOULDER (dbc) G ps, POWER GAIN (db) 26 25 24 23 22 2 V DD =50Vdc,I DQ = 450 ma Pulse Width = 0 sec, % Duty Cycle 6 MHz 740 MHz 860 MHz 470 MHz G ps D 860 MHz 70 6 MHz 60 740 MHz 50 470 MHz 40 30 30 D DRAIN EFFICIENCY (%) 9 0 0 0 P out, OUTPUT POWER (WATTS) PEAK Figure 23. Power Gain and Drain Efficiency versus Output Power (Broadband Reference Circuit)
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PRODUCT DOCUMENTATION AND SOFTWARE Refer to the following resources to aid your design process. Application Notes AN907: Solder Reflow Attach Method for High Power RF Devices in Over--Molded Plastic Packages AN955: Thermal Measurement Methodology of RF Power Amplifiers AN3263: Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over--Molded Plastic Packages AN3789: Clamping of High Power RF Transistors and RFICs in Over--Molded Plastic Packages Engineering Bulletins EB22: Using Data Sheet Impedances for RF LDMOS Devices Software Electromigration MTTF Calculator For Software, do a Part Number search at http://www.freescale.com, and select the Part Number link. Go to the Software & Tools tab on the part s Product Summary page to download the respective tool. REVISION HISTORY The following table summarizes revisions to this document. Revision Date Description 0 July 4 Initial Release of Data Sheet 8
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