DATA SHEET. PCA82C251 CAN transceiver for 24 V systems INTEGRATED CIRCUITS
|
|
|
- Julius Abner Wright
- 9 years ago
- Views:
Transcription
1 INTEGRATED CIRCUITS DATA SHEET Supersedes data of 1997 Mar 14 File under Integrated Circuits, IC Jan 13
2 FEATURES Fully compatible with the ISO V standard Slope control to reduce RFI Thermally protected Short-circuit proof to battery and ground in 24 V powered systems Low-current standby mode An unpowered node does not disturb the bus lines At least 110 nodes can be connected High speed (up to 1 Mbaud) High immunity against electromagnetic interference. GENERAL DESCRIPTION The is the interface between the CAN protocol controller and the physical bus. It is primarily intended for applications (up to 1 Mbaud) in trucks and buses. The device provides differential transmit capability to the bus and differential receive capability to the CAN controller. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V CC supply voltage V I CC supply current standby mode 275 µa 1/t bit maximum transmission speed non-return-to-zero 1 Mbaud V CAN CANH, CANL input/output voltage V V diff differential bus voltage V T amb ambient temperature C ORDERING INFORMATION TYPE PACKAGE NUMBER NAME DESCRIPTION CODE DIP8 plastic dual in-line package; 8 leads (300 mil) SOT97-1 T SO8 plastic small outline package; 8 leads body width 3.9 mm SOT96-1 U bare die; µm 2000 Jan 13 2
3 BLOCK DIAGRAM handbook, full pagewidth V CC 3 TXD 1 PROTECTION Rs RXD 8 4 SLOPE/ STANDBY RECEIVER DRIVER 7 6 CANH CANL V ref 5 REFERENCE VOLTAGE 2 MBG613 GND Fig.1 Block diagram. PINNING SYMBOL PIN DESCRIPTION TXD 1 transmit data input GND 2 ground V CC 3 supply voltage RXD 4 receive data output V ref 5 reference voltage output CANL 6 LOW-level CAN voltage input/output CANH 7 HIGH-level CAN voltage input/output Rs 8 slope resistor input handbook, halfpage TXD 1 8 Rs GND 2 7 CANH V CC 3 6 CANL RXD 4 5 V ref MBG612 Fig.2 Pin configuration Jan 13 3
4 FUNCTIONAL DESCRIPTION The is the interface between the CAN protocol controller and the physical bus. It is primarily intended for applications up to 1 Mbaud in trucks and buses. The device provides differential transmit capability to the bus and differential receive capability to the CAN controller. It is fully compatible with the ISO V standard. A current limiting circuit protects the transmitter output stage against short-circuit to positive and negative battery voltage. Although the power dissipation is increased during this fault condition, this feature will prevent destruction of the transmitter output stage. If the junction temperature exceeds a value of approximately 160 C, the limiting current of both transmitter outputs is decreased. Because the transmitter is responsible for the major part of the power dissipation, this will result in a reduced power dissipation and hence a lower chip temperature. All other parts of the IC will remain operating. The thermal protection is particularly needed when a bus line is short-circuited. The CANH and CANL lines are also protected against electrical transients which may occur in an automotive environment. Pin 8 (Rs) allows three different modes of operation to be selected: high-speed, slope control or standby. For high-speed operation, the transmitter output transistors are simply switched on and off as fast as possible. In this mode, no measures are taken to limit the rise and fall slope. Use of a shielded cable is recommended to avoid RFI problems. The high-speed mode is selected by connecting pin 8 to ground. The slope control mode allows the use of an unshielded twisted pair or a parallel pair of wires as bus lines. To reduce RFI, the rise and fall slope should be limited. The rise and fall slope can be programmed with a resistor connected from pin 8 to ground. The slope is proportional to the current output at pin 8. If a HIGH level is applied to pin 8, the circuit enters a low current standby mode. In this mode, the transmitter is switched off and the receiver is switched to a low current. If dominant bits are detected (differential bus voltage >0.9 V), RXD will be switched to a LOW level. The microcontroller should react to this condition by switching the transceiver back to normal operation (via pin 8). Because the receiver is slower in standby mode, the first message will be lost at higher bit rates. Table 1 Truth table of the CAN transceiver V CC TXD CANH CANL BUS STATE RXD 4.5 to 5.5 V 0 HIGH LOW dominant to 5.5 V 1 (or floating) floating floating recessive 1 (2) 4.5<V CC < 5.5 V X (1) floating if V Rs > 0.75V CC Notes 1. X = don t care. 2. If another bus node is transmitting a dominant bit, then RXD is logic 0. floating if floating 1 (2) V Rs > 0.75V CC 0<V CC < 4.5 V floating floating floating floating X (1) Table 2 Pin Rs summary CONDITION FORCED AT PIN Rs MODE RESULTING VOLTAGE OR CURRENT AT PIN Rs V Rs > 0.75V CC standby I Rs <10µA 10 µa < I Rs < 200 µa slope control 0.4V CC <V Rs < 0.6V CC V Rs < 0.3V CC high-speed I Rs < 500 µa 2000 Jan 13 4
5 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134); all voltages are referenced to pin 2; positive input current. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V CC supply voltage V V n DC voltage at pins 1, 4, 5 and V CC V V 6 DC voltage at pin 6 (CANL) 0V<V CC < 5.5 V; TXD HIGH V or floating 0V<V CC < 5.5 V; no time V limit; note 1 0V<V CC < 5.5 V; no time V limit; note 2 V 7 DC voltage at pin 7 (CANH) 0V<V CC < 5.5 V; no time limit V V tr transient voltage on pins 6 and 7 see Fig V T stg storage temperature C T amb ambient temperature C T vj virtual junction temperature note C V esd electrostatic discharge voltage note V note V Notes 1. TXD is LOW. Short-circuit protection provided for slew rates up to 5 V/µs for voltages above +30 V. 2. Short-circuit applied when TXD is HIGH, followed by TXD switched to LOW. 3. In accordance with IEC An alternative definition of virtual junction temperature is: T vj =T amb +P d R th(vj-a), where R th(vj-a) is a fixed value to be used for the calculation of T vj. The rating for T vj limits the allowable combinations of power dissipation (P d ) and ambient temperature (T amb ). 4. Classification A: human body model; C = 100 pf; R = 1500 Ω; V = ±2500 V. 5. Classification B: machine model; C = 200 pf; R = 0 Ω; V = ±250 V. THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT R th(j-a) thermal resistance from junction to ambient in free air 100 K/W T 160 K/W QUALITY SPECIFICATION According to SNW-FQ-611 part E Jan 13 5
6 CHARACTERISTICS V CC = 4.5 to 5.5 V; T amb = 40 to C; R L =60Ω; I 8 > 10 µa; unless otherwise specified; all voltages referenced to ground (pin 2); positive input current; all parameters are guaranteed over the ambient temperature range by design, but only 100% tested at +25 C. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Supply I 3 supply current dominant; V 1 =1V; 78 ma V CC < 5.1 V dominant; V 1 =1V; 80 ma V CC < 5.25 V dominant; V 1 =1V; 85 ma V CC < 5.5 V recessive; V 1 =4V; 10 ma R 8 =47kΩ standby; note µa DC bus transmitter V IH HIGH-level input voltage output recessive 0.7V CC V CC V V IL LOW-level input voltage output dominant V CC V I IH HIGH-level input current V 1 =4V µa I IL LOW-level input current V 1 =1V µa V 6, 7 recessive bus voltage V 1 = 4 V; no load V I LO off-state output leakage 2 V<(V 6,V 7 )<7V 2 +2 ma current 5 V<(V 6,V 7 ) < 36 V ma V 7 CANH output voltage V 1 =1V; V CC = 4.75 to 5.5 V V V 1 =1V; V CC = 4.5 to 4.75 V V V 6 CANL output voltage V 1 =1V V V 6,7 difference between output V 1 =1V V voltage at pins 6 and 7 V 1 =1V; R L =45Ω 1.5 V V 1 = 4 V; no load mv I sc7 short-circuit CANH current V 7 = 5 V 200 ma V 7 = 36 V 100 ma I sc6 short-circuit CANL current V 6 =36V 200 ma DC bus receiver [V 1 = 4 V; pins 6 and 7 externally driven; 2 V<(V 6,V 7 ) < 7 V; unless otherwise specified] V diff(r) differential input voltage note V (recessive) 7 V<(V 6, V 7 ) < 12 V; note V V diff(d) differential input voltage (dominant) V 7 V<(V 6, V 7 ) < 12 V; not V standby mode standby mode V standby mode; V CC = 4.5 to 5.10 V V V diff(hys) differential input hysteresis see Fig mv 2000 Jan 13 6
7 SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V OH V OL R i HIGH-level output voltage (pin 4) LOW-level output voltage (pin 4) I 4 = 100 µa 0.8V CC V CC V I 4 =1mA 0 0.2V CC V I 4 =10mA V CANH, CANL input 5 25 kω resistance R diff differential input resistance kω Reference output V ref reference output voltage V 8 =1V; I 5 <50µA 0.45V CC 0.55V CC V V 8 =4V; I 5 <5µA 0.4V CC 0.6V CC V Timing (R L =60Ω; C L = 100 pf; unless otherwise specified. See Figs 3 and 4) t bit minimum bit time R 8 =0Ω 1 µs t ontxd delay TXD to bus active R 8 =0Ω 50 ns t offtxd delay TXD to bus inactive R 8 =0Ω ns t onrxd delay TXD to receiver active R 8 =0Ω ns t offrxd t onrxd delay TXD to receiver inactive R 8 =0Ω; T amb < +85 C; ns V CC = 4.5 to 5.1 V R 8 =0Ω; V CC = 4.5 to 5.1 V ns R 8 =0Ω; T amb < +85 C ns R 8 =0Ω ns R 8 =47kΩ ns delay TXD to receiver R 8 =47kΩ ns active SR CANH, CANL slew rate R 8 =47kΩ 7 V/µs t WAKE wake-up time from standby see Fig.6 20 µs (via pin 8) t drxdl bus dominant to RXD LOW V 8 = 4 V; see Fig.7 3 µs Standby/slope control (pin 8) V stb input voltage for standby 0.75V CC V mode I slope slope control mode current µa V slope slope control mode voltage 0.4V CC 0.6V CC V Notes 1. I 1 =I 4 =I 5 = 0 ma; 0 V < V 6 <V CC ; 0V<V 7 <V CC ; V 8 =V CC ; T amb <90 C. 2. This is valid for the receiver in all modes: high-speed, slope control and standby Jan 13 7
8 TEST AND APPLICATION INFORMATION handbook, full pagewidth +5 V 100 nf V CC TXD 3 1 CANH 7 V ref 5 60 Ω 100 pf RXD CANL GND Rs 30 pf MBG614 Fig.3 Test circuit for dynamic characteristics. handbook, full pagewidth V TXD V CC 0 V V diff 0.9 V 0.5 V V RXD 0.3V CC 0.7V CC t ontxd t onrxd t offtxd t offrxd MBG615 Fig.4 Timing diagram for dynamic characteristics Jan 13 8
9 handbook, full pagewidth V RXD MBG616 HIGH hysteresis LOW V diff (V) Fig.5 Hysteresis. handbook, full pagewidth V CC V Rs 0 V V RXD t WAKE MBG617 V TXD =1V. Fig.6 Timing diagram for wake up from standby. handbook, full pagewidth 1.5 V V diff 0 V V RXD t drxdl MBG618 V Rs = 4 V; V TXD =4V. Fig.7 Timing diagram for bus dominant to RXD low Jan 13 9
10 handbook, full pagewidth +5 V 100 nf V CC TXD 3 1 CANH 7 V ref 5 60 Ω RXD CANL GND Rs 47 kω 500 pf 500 pf SCHAFFNER GENERATOR MBG619 The waveforms of the applied transients shall be in accordance with ISO 7637 part 1, test pulses 1, 2, 3a and 3b. Fig.8 Test circuit for automotive transients. handbook, full pagewidth P8xC592 CAN-CONTROLLER CTX0 CRX0 CRX1 PX,Y R ext TXD RXD V ref Rs +5 V CAN-TRANSCEIVER V CC GND 100 nf CANH CANL 120 Ω CAN BUS LINE 120 Ω MBG620 (1) The output control register of the P8xC592 should be programmed to 1AH (push-pull operation, dominant = LOW). (2) If no slope control is desired: R ext =0. Fig.9 Application of the CAN Transceiver Jan 13 10
11 BONDING PAD LOCATIONS COORDINATES (1) SYMBOL PAD x y TXD GND V CC RXD V ref CANL CANH Rs Note 1. All coordinates (µm) represent the position of the centre of each pad with respect to the bottom left-hand corner of the die (x/y = 0). handbook, full pagewidth Rs CANH CANL V ref mm U x 0 0 TXD GND V CC RXD y 2.84 mm MGL944 Fig.10 Bonding pad locations Jan 13 11
12 PACKAGE OUTLINES DIP8: plastic dual in-line package; 8 leads (300 mil) SOT97-1 D M E seating plane A 2 A L A 1 Z e b 1 w M c (e ) 1 8 b 5 b 2 M H pin 1 index E mm scale DIMENSIONS (inch dimensions are derived from the original mm dimensions) A A UNIT 1 A 2 (1) (1) (1) max. b 1 b 2 c D E e L M Z min. max. b e 1 M E H w max mm inches Note 1. Plastic or metal protrusions of 0.25 mm maximum per side are not included OUTLINE VERSION REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE SOT G01 MO-001 SC Jan 13 12
13 SO8: plastic small outline package; 8 leads; body width 3.9 mm SOT96-1 D E A X c y H E v M A Z 8 5 Q A 2 A 1 (A ) 3 A pin 1 index θ L p 1 4 L e b p w M detail X mm scale DIMENSIONS (inch dimensions are derived from the original mm dimensions) UNIT mm inches A max A 1 A 2 A 3 b p c D (1) E (2) e H (1) E L L p Q v w y Z Notes 1. Plastic or metal protrusions of 0.15 mm maximum per side are not included. 2. Plastic or metal protrusions of 0.25 mm maximum per side are not included θ o 8 o OUTLINE VERSION REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE SOT E03 MS Jan 13 13
14 SOLDERING Introduction This text gives a very brief insight to a complex technology. A more in-depth account of soldering ICs can be found in our Data Handbook IC26; Integrated Circuit Packages (document order number ). There is no soldering method that is ideal for all IC packages. Wave soldering is often preferred when through-hole and surface mount components are mixed on one printed-circuit board. However, wave soldering is not always suitable for surface mount ICs, or for printed-circuit boards with high population densities. In these situations reflow soldering is often used. Through-hole mount packages SOLDERING BY DIPPING OR BY SOLDER WAVE The maximum permissible temperature of the solder is 260 C; solder at this temperature must not be in contact with the joints for more than 5 seconds. The total contact time of successive solder waves must not exceed 5 seconds. The device may be mounted up to the seating plane, but the temperature of the plastic body must not exceed the specified maximum storage temperature (T stg(max) ). If the printed-circuit board has been pre-heated, forced cooling may be necessary immediately after soldering to keep the temperature within the permissible limit. MANUAL SOLDERING Apply the soldering iron (24 V or less) to the lead(s) of the package, either below the seating plane or not more than 2 mm above it. If the temperature of the soldering iron bit is less than 300 C it may remain in contact for up to 10 seconds. If the bit temperature is between 300 and 400 C, contact may be up to 5 seconds. Surface mount packages REFLOW SOLDERING Reflow soldering requires solder paste (a suspension of fine solder particles, flux and binding agent) to be applied to the printed-circuit board by screen printing, stencilling or pressure-syringe dispensing before package placement. Several methods exist for reflowing; for example, infrared/convection heating in a conveyor type oven. Throughput times (preheating, soldering and cooling) vary between 100 and 200 seconds depending on heating method. Typical reflow peak temperatures range from 215 to 250 C. The top-surface temperature of the packages should preferable be kept below 230 C. WAVE SOLDERING Conventional single wave soldering is not recommended for surface mount devices (SMDs) or printed-circuit boards with a high component density, as solder bridging and non-wetting can present major problems. To overcome these problems the double-wave soldering method was specifically developed. If wave soldering is used the following conditions must be observed for optimal results: Use a double-wave soldering method comprising a turbulent wave with high upward pressure followed by a smooth laminar wave. For packages with leads on two sides and a pitch (e): larger than or equal to 1.27 mm, the footprint longitudinal axis is preferred to be parallel to the transport direction of the printed-circuit board; smaller than 1.27 mm, the footprint longitudinal axis must be parallel to the transport direction of the printed-circuit board. The footprint must incorporate solder thieves at the downstream end. For packages with leads on four sides, the footprint must be placed at a 45 angle to the transport direction of the printed-circuit board. The footprint must incorporate solder thieves downstream and at the side corners. During placement and before soldering, the package must be fixed with a droplet of adhesive. The adhesive can be applied by screen printing, pin transfer or syringe dispensing. The package can be soldered after the adhesive is cured. Typical dwell time is 4 seconds at 250 C. A mildly-activated flux will eliminate the need for removal of corrosive residues in most applications. MANUAL SOLDERING Fix the component by first soldering two diagonally-opposite end leads. Use a low voltage (24 V or less) soldering iron applied to the flat part of the lead. Contact time must be limited to 10 seconds at up to 300 C. When using a dedicated tool, all other leads can be soldered in one operation within 2 to 5 seconds between 270 and 320 C Jan 13 14
15 Suitability of IC packages for wave, reflow and dipping soldering methods SOLDERING METHOD MOUNTING PACKAGE WAVE REFLOW (1) DIPPING Through-hole mount DBS, DIP, HDIP, SDIP, SIL suitable (2) suitable Surface mount BGA, LFBGA, SQFP, TFBGA not suitable suitable HBCC, HLQFP, HSQFP, HSOP, HTQFP, not suitable (3) suitable HTSSOP, SMS PLCC (4), SO, SOJ suitable suitable LQFP, QFP, TQFP not recommended (4)(5) suitable SSOP, TSSOP, VSO not recommended (6) suitable Notes 1. All surface mount (SMD) packages are moisture sensitive. Depending upon the moisture content, the maximum temperature (with respect to time) and body size of the package, there is a risk that internal or external package cracks may occur due to vaporization of the moisture in them (the so called popcorn effect). For details, refer to the Drypack information in the Data Handbook IC26; Integrated Circuit Packages; Section: Packing Methods. 2. For SDIP packages, the longitudinal axis must be parallel to the transport direction of the printed-circuit board. 3. These packages are not suitable for wave soldering as a solder joint between the printed-circuit board and heatsink (at bottom version) can not be achieved, and as solder may stick to the heatsink (on top version). 4. If wave soldering is considered, then the package must be placed at a 45 angle to the solder wave direction. The package footprint must incorporate solder thieves downstream and at the side corners. 5. Wave soldering is only suitable for LQFP, QFP and TQFP packages with a pitch (e) equal to or larger than 0.8 mm; it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.65 mm. 6. Wave soldering is only suitable for SSOP and TSSOP packages with a pitch (e) equal to or larger than 0.65 mm; it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.5 mm Jan 13 15
16 DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. BARE DIE DISCLAIMER All die are tested and are guaranteed to comply with all data sheet limits up to the point of wafer sawing for a period of ninety (90) days from the date of Philips delivery. If there are data sheet limits not guaranteed, these will be separately indicated in the data sheet. There are no post packing tests performed on individual die or wafer. Philips Semiconductors has no control of third party procedures in the sawing, handling, packing or assembly of the die. Accordingly, Philips Semiconductors assumes no liability for device functionality or performance of the die or systems after third party sawing, handling, packing or assembly of the die. It is the responsibility of the customer to test and qualify their application in which the die is used Jan 13 16
17 NOTES 2000 Jan 13 17
18 NOTES 2000 Jan 13 18
19 NOTES 2000 Jan 13 19
20 a worldwide company Argentina: see South America Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140, Tel , Fax Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel , Fax Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6, MINSK, Tel , Fax Belgium: see The Netherlands Brazil: see South America Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor, 51 James Bourchier Blvd., 1407 SOFIA, Tel , Fax Canada: PHILIPS SEMICONDUCTORS/COMPONENTS, Tel , Fax China/Hong Kong: 501 Hong Kong Industrial Technology Centre, 72 Tat Chee Avenue, Kowloon Tong, HONG KONG, Tel , Fax Colombia: see South America Czech Republic: see Austria Denmark: Sydhavnsgade 23, 1780 COPENHAGEN V, Tel , Fax Finland: Sinikalliontie 3, FIN ESPOO, Tel , Fax France: 51 Rue Carnot, BP317, SURESNES Cedex, Tel , Fax Germany: Hammerbrookstraße 69, D HAMBURG, Tel , Fax Hungary: see Austria India: Philips INDIA Ltd, Band Box Building, 2nd floor, 254-D, Dr. Annie Besant Road, Worli, MUMBAI , Tel , Fax Indonesia: PT Philips Development Corporation, Semiconductors Division, Gedung Philips, Jl. Buncit Raya Kav , JAKARTA 12510, Tel ext. 2501, Fax Ireland: Newstead, Clonskeagh, DUBLIN 14, Tel , Fax Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053, TEL AVIV 61180, Tel , Fax Italy: PHILIPS SEMICONDUCTORS, Via Casati, MONZA (MI), Tel , Fax Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO , Tel , Fax Korea: Philips House, Itaewon-dong, Yongsan-ku, SEOUL, Tel , Fax Malaysia: No. 76 Jalan Universiti, PETALING JAYA, SELANGOR, Tel , Fax Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905, Tel , Fax Middle East: see Italy Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB, Tel , Fax New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND, Tel , Fax Norway: Box 1, Manglerud 0612, OSLO, Tel , Fax Pakistan: see Singapore Philippines: Philips Semiconductors Philippines Inc., 106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI, Metro MANILA, Tel , Fax Poland: Al.Jerozolimskie 195 B, WARSAW, Tel , Fax Portugal: see Spain Romania: see Italy Russia: Philips Russia, Ul. Usatcheva 35A, MOSCOW, Tel , Fax Singapore: Lorong 1, Toa Payoh, SINGAPORE , Tel , Fax Slovakia: see Austria Slovenia: see Italy South Africa: S.A. PHILIPS Pty Ltd., Main Road Martindale, 2092 JOHANNESBURG, P.O. Box Newville 2114, Tel , Fax South America: Al. Vicente Pinzon, 173, 6th floor, SÃO PAULO, SP, Brazil, Tel , Fax Spain: Balmes 22, BARCELONA, Tel , Fax Sweden: Kottbygatan 7, Akalla, S STOCKHOLM, Tel , Fax Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH, Tel Fax Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1, TAIPEI, Taiwan Tel , Fax Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd., 209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260, Tel , Fax Turkey: Yukari Dudullu, Org. San. Blg., 2.Cad. Nr Umraniye, ISTANBUL, Tel , Fax Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7, KIEV, Tel , Fax United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes, MIDDLESEX UB3 5BX, Tel , Fax United States: 811 East Arques Avenue, SUNNYVALE, CA , Tel , Fax Uruguay: see South America Vietnam: see Singapore Yugoslavia: PHILIPS, Trg N. Pasica 5/v, BEOGRAD, Tel , Fax For all other countries apply to: Philips Semiconductors, International Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax Internet: Philips Electronics N.V SCA69 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands /03/pp20 Date of release: 2000 Jan 13 Document order number:
DATA SHEET. BF869; BF871 NPN high-voltage transistors DISCRETE SEMICONDUCTORS. 1999 Apr 12. Product specification Supersedes data of 1996 Dec 09
DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D067 Supersedes data of 1996 Dec 09 1999 Apr 12 FEATURES Low feedback capacitance. handbook, halfpage APPLICATIONS For use in class-b video output
DATA SHEET. BAV99 High-speed double diode DISCRETE SEMICONDUCTORS. 1999 May 11. Product specification Supersedes data of 1996 Sep 17.
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 Supersedes data of 1996 Sep 17 1999 May 11 FEATURES Small plastic SMD package High switching speed: max. 4 ns Continuous reverse voltage: max. 75
DATA SHEET. KMZ10C Magnetic field sensor DISCRETE SEMICONDUCTORS. 1998 Mar 24
DISCRETE SEMICONDUCTORS DATA SHEET M3D329 Supersedes data of November 1994 File under Discrete Semiconductors, SC17 1998 Mar 24 DESCRIPTION The is a magnetic field sensor, employing the magnetoresistive
DISCRETE SEMICONDUCTORS DATA SHEET M3D176. 1N4148; 1N4448 High-speed diodes. 1999 May 25. Product specification Supersedes data of 1996 Sep 03
DISCRETE SEMICONDUCTORS DATA SHEET M3D176 Supersedes data of 1996 Sep 03 1999 May 25 FEATURES Hermetically sealed leaded glass SOD27 (DO-35) package High switching speed: max. 4 ns General application
DATA SHEET. BC327; BC327A; BC328 PNP general purpose transistors DISCRETE SEMICONDUCTORS. 1997 Mar 10
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Mar 10 BC327; BC327A; BC328 FEATURES High current (max. 500 ma)
DATA SHEET. KMZ51 Magnetic field sensor DISCRETE SEMICONDUCTORS. 1998 Mar 24
DISCRETE SEMICONDUCTORS DATA SHEET M3D315 Supersedes data of 1996 Nov 15 File under Discrete Semiconductors, SC17 1998 Mar 24 FEATURES High sensitivity Integrated compensation coil Integrated set/reset
DATA SHEET. BC546; BC547 NPN general purpose transistors DISCRETE SEMICONDUCTORS. 1999 Apr 15. Product specification Supersedes data of 1997 Mar 04
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 Supersedes data of 1997 Mar 04 1999 Apr 15 FEATURES Low current (max. 100 ma) Low voltage (max. 65 V). APPLICATIONS General purpose switching and
DISCRETE SEMICONDUCTORS DATA SHEET
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 Supersedes data of 1997 May 05 1999 May 21 FEATURES High current (max. 600 ma) Low voltage (max. 40 V). APPLICATIONS General purpose switching and
Demoboard for the BGA2001 (900 and 1800 MHz)
APPLICATION INFORMATION SUMMARY Description of products BGA2001: RF transistor with internal bias circuit. Benefit is lower component count, internal compensation for temperature and current gain spread.
DATA SHEET. BS250 P-channel enhancement mode vertical D-MOS transistor DISCRETE SEMICONDUCTORS
DISCRETE SEMICONDUCTORS DATA SHEET P-channel enhancement mode vertical File under Discrete Semiconductors, SC13b April 1995 DESCRIPTION P-channel enhancement mode vertical in TO-92 variant envelope and
DATA SHEET. BSP50; BSP51; BSP52 NPN Darlington transistors DISCRETE SEMICONDUCTORS. 1999 Apr 23. Product specification Supersedes data of 1997 Apr 22
DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D087 Supersedes data of 1997 Apr 22 1999 Apr 23 FEATURES PINNING High current (max. 1 A) Low voltage (max. 80 V) Integrated diode and resistor. APPLICATIONS
DATA SHEET. BC817 NPN transistor à usage général DISCRETE SEMICONDUCTORS. 1999 Jun 01. Product specification Supersedes data of 1997 Mar 12
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 NPN transistor à usage général Supersedes data of 1997 Mar 12 1999 Jun 01 Caractéristiques Fort courant (max. 500 ma) Faible tension (max. 45 V).
DATA SHEET. BD136; BD138; BD140 PNP power transistors DISCRETE SEMICONDUCTORS. 1997 Mar 26
DISCRETE SEMICONDUCTORS DATA SHEET ok, halfpage M3D100 Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Mar 26 FEATURES High current (max. 1.5 A) Low voltage (max. 80 V).
DATA SHEET. BC160; BC161 PNP medium power transistors DISCRETE SEMICONDUCTORS. 1997 May 12
DISCRETE SEMICONDUCTORS DATA SHEET M3D110 Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 May 12 FEATURES High current (max. 1 A) Low voltage (max. 60 V). APPLICATIONS General
DATA SHEET. BF494; BF495 NPN medium frequency transistors DISCRETE SEMICONDUCTORS. 1997 Jul 08
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Jul 08 FEATURES PINNING Low current (max. 30 ma) Low voltage (max.
DATA SHEET. BC546; BC547; BC548 NPN general purpose transistors DISCRETE SEMICONDUCTORS. 1997 Mar 04
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Mar 04 FEATURES Low current (max. 100 ma) Low voltage (max. 65 V).
INTEGRATED CIRCUITS DATA SHEET. SAA1064 4-digit LED-driver with I 2 C-Bus interface. Product specification File under Integrated Circuits, IC01
INTEGRATED CIRCUITS DATA SHEET 4-digit LED-driver with I 2 C-Bus interface File under Integrated Circuits, IC01 February 1991 GENERAL DESCRIPTION The LED-driver is a bipolar integrated circuit made in
DATA SHEET. TDA8356 DC-coupled vertical deflection circuit INTEGRATED CIRCUITS
INTEGRATED CIRCUITS DATA SHEET DC-coupled vertical deflection circuit Supersedes data of 1998 Sep 07 File under Integrated Circuits, IC02 1999 Sep 27 FEATURES Few external components Highly efficient fully
BSN20. 1. Description. 2. Features. 3. Applications. 4. Pinning information. N-channel enhancement mode field-effect transistor
Rev. 3 26 June 2 Product specification. Description in a plastic package using TrenchMOS technology. Product availability: in SOT23. 2. Features TrenchMOS technology Very fast switching Logic level compatible
DATA SHEET. 2N2219; 2N2219A NPN switching transistors DISCRETE SEMICONDUCTORS. 1997 Sep 03
DISCRETE SEMICONDUCTORS DATA SHEET M3D111 Supersedes data of 1997 May 07 File under Discrete Semiconductors, SC04 1997 Sep 03 FEATURES High current (max. 800 ma) Low voltage (max. 40 V). APPLICATIONS High-speed
INTEGRATED CIRCUITS. For a complete data sheet, please also download:
INTEGRATED CIRCUITS DATA SHEET For a complete data sheet, please also download: The IC06 74HC/HCT/HCU/HCMOS Logic Family Specifications The IC06 74HC/HCT/HCU/HCMOS Logic Package Information The IC06 74HC/HCT/HCU/HCMOS
DATA SHEET. 2N2222; 2N2222A NPN switching transistors DISCRETE SEMICONDUCTORS. 1997 May 29
DISCRETE SEMICONDUCTORS DATA SHEET M3D125 Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 May 29 FEATURES High current (max. 800 ma) Low voltage (max. 40 V). APPLICATIONS
DATA SHEET. TDA8351 DC-coupled vertical deflection circuit INTEGRATED CIRCUITS
INTEGRATED CIRCUITS DATA SHEET DC-coupled vertical deflection circuit Supersedes data of January 1995 File under Integrated Circuits, IC02 1999 Sep 27 FEATURES Few external components Highly efficient
INTEGRATED CIRCUITS DATA SHEET. PCF8574 Remote 8-bit I/O expander for I 2 C-bus. Product specification Supersedes data of 2002 Jul 29.
INTEGRATED CIRCUITS DATA SHEET Remote 8-bit I/O expander for I 2 C-bus Supersedes data of 2002 Jul 29 2002 Nov 22 CONTENTS 1 FEATURES 2 GENERAL DESCRIPTION 3 ORDERING INFORMATION 4 BLOCK DIAGRAM 5 PINNING
DATA SHEET. TDA8561Q 2 24 W BTL or 4 12 W single-ended car radio power amplifier INTEGRATED CIRCUITS. 1999 Jun 30
INTEGRATED CIRCUITS DATA SHEET 2 24 W BTL or 4 2 W single-ended car radio power amplifier Supersedes data of 997 Sep 22 File under Integrated Circuits, IC0 999 Jun 30 FEATURES Requires very few external
Design of H.F. Wideband Power Transformers; Part II
APPLICATION NOTE Design of H.F. Wideband Power Transformers; Part II CONTENTS 1 SUMMARY 2 INTRODUCTION 3 L.F. LIMITATIONS OF CONVENTIONAL TRANSFORMERS 4 H.F. LIMITATION OF CONVENTIONAL TRANSFORMERS 5 H.F.
INTEGRATED CIRCUITS DATA SHEET. TJA1050 High speed CAN transceiver. Product specification Supersedes data of 2002 May 16.
INTEGRATED CIRCUITS DATA SHEET Supersedes data of 2002 May 16 2003 Oct 22 FEATURES Fully compatible with the ISO 11898 standard High speed (up to 1 Mbaud) Very low ElectroMagnetic Emission (EME) Differential
How To Control A Power Supply On A Powerline With A.F.F Amplifier
INTEGRATED CIRCUITS DATA SHEET Sound I.F. amplifier/demodulator for TV File under Integrated Circuits, IC02 March 1986 GENERAL DESCRIPTION The is an i.f. amplifier with a symmetrical FM demodulator and
DATA SHEET. TDA8560Q 2 40 W/2 Ω stereo BTL car radio power amplifier with diagnostic facility INTEGRATED CIRCUITS. 1996 Jan 08
INTEGRATED CIRCUITS DATA SHEET power amplifier with diagnostic facility Supersedes data of March 1994 File under Integrated Circuits, IC01 1996 Jan 08 FEATURES Requires very few external components High
DATA SHEET. TDA1575T FM front end circuit for CENELEC EN 55020 applications INTEGRATED CIRCUITS
INTEGRATED CIRCUITS DATA SHEET Supersedes data of October 1990 File under Integrated Circuits, IC01 April 1993 FEATURES Bipolar integrated FM front end circuit, designed for use in car radios and home
4-bit binary full adder with fast carry CIN + (A1 + B1) + 2(A2 + B2) + 4(A3 + B3) + 8(A4 + B4) = = S1 + 2S2 + 4S3 + 8S4 + 16COUT
Rev. 03 11 November 2004 Product data sheet 1. General description 2. Features The is a high-speed Si-gate CMOS device and is pin compatible with low power Schottky TTL (LSTTL). The is specified in compliance
INTEGRATED CIRCUITS DATA SHEET. TDA7052 1 W BTL mono audio amplifier. Product specification File under Integrated Circuits, IC01
INTEGRATED CIRCUITS DATA SHEET TDA7052 1 W BTL mono audio amplifier File under Integrated Circuits, IC01 July 1994 GENERAL DESCRIPTION The TDA7052 is a mono output amplifier in a 8-lead dual-in-line (DIL)
INTEGRATED CIRCUITS. For a complete data sheet, please also download:
INTEGRTED CIRCUITS DT SEET For a complete data sheet, please also download: The IC06 74C/CT/CU/CMOS ogic Family Specifications The IC06 74C/CT/CU/CMOS ogic Package Information The IC06 74C/CT/CU/CMOS ogic
INTEGRATED CIRCUITS DATA SHEET. TDA7000 FM radio circuit. Product specification File under Integrated Circuits, IC01
INTEGRATED CIRCUITS DATA SHEET File under Integrated Circuits, IC01 May 1992 GENERAL DESCRIPTION The is a monolithic integrated circuit for mono FM portable radios, where a minimum on peripheral components
DATA SHEET. TDA1543 Dual 16-bit DAC (economy version) (I 2 S input format) INTEGRATED CIRCUITS
INTEGRATED CIRCUITS DATA SHEET File under Integrated Circuits, IC01 February 1991 FEATURES Low distortion 16-bit dynamic range 4 oversampling possible Single 5 V power supply No external components required
DATA SHEET. BST50; BST51; BST52 NPN Darlington transistors DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2001 Feb 20.
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 Supersedes data of 2001 Feb 20 2004 Dec 09 FEATURES High current (max. 0.5 A) Low voltage (max. 80 V) Integrated diode and resistor. APPLICATIONS
Kit 27. 1W TDA7052 POWER AMPLIFIER
Kit 27. 1W TDA7052 POWER AMPLIFIER This is a 1 watt mono amplifier Kit module using the TDA7052 from Philips. (Note, no suffix.) It is designed to be used as a building block in other projects where a
DATA SHEET. TDA1562Q 70 W high efficiency power amplifier with diagnostic facility INTEGRATED CIRCUITS. 1998 Apr 07
INTEGRATED CIRCUITS DATA SHEET 70 W high efficiency power amplifier File under Integrated Circuits, IC01 1998 Apr 07 FEATURES Very high output power, operating from a single low supply voltage Low power
DATA SHEET. PBR951 UHF wideband transistor DISCRETE SEMICONDUCTORS. 1998 Aug 10
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D88 Supersedes data of 998 Jun 9 File under Discrete Semiconductors, SC4 998 Aug FEATURES PINNING - SOT3 Small size Low noise Low distortion High gain
DATA SHEET. TDA1510AQ 24 W BTL or 2 x 12 W stereo car radio power amplifier INTEGRATED CIRCUITS
INTEGRATED CIRCUITS DATA SHEET 24 W BTL or 2 x 12 W stereo car radio File under Integrated Circuits, IC01 January 1992 GENERAL DESCRIPTION The is a class-b integrated output amplifier encapsulated in a
Order code Temperature range Package Packaging
ST485B ST485C Low power RS-485/RS-422 transceiver Features Low quiescent current: 300 µa Designed for RS-485 interface application - 7 V to 12 V common mode input voltage range Driver maintains high impedance
INTEGRATED CIRCUITS. 74LVC08A Quad 2-input AND gate. Product specification IC24 Data Handbook. 1997 Jun 30
INTEGRATED CIRCUITS IC24 Data Handbook 1997 Jun 30 FEATURES Wide supply voltage range of 1.2 V to 3.6 V In accordance with JEDEC standard no. 8-1A Inputs accept voltages up to 5.5 V CMOS low power consumption
DATA SHEET. TDA1518BQ 24 W BTL or 2 x 12 watt stereo car radio power amplifier INTEGRATED CIRCUITS
INTEGRATED CIRCUITS DATA SHEET File under Integrated Circuits, IC01 July 1994 GENERAL DESCRIPTION The is an integrated class-b output amplifier in a 13-lead single-in-line (SIL) plastic power package.
INTEGRATED CIRCUITS. 74F153 Dual 4-line to 1-line multiplexer. Product specification 1996 Jan 05 IC15 Data Handbook
INTEGRATED CIRCUITS 1996 Jan 05 IC15 Data Handbook FEATURES Non-inverting outputs Separate enable for each section Common select inputs See 74F253 for 3-State version PIN CONFIGURATION Ea 1 S1 2 I3a 3
DATA SHEET. BC875; BC879 NPN Darlington transistors DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1999 May 28.
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 Supersedes data of 1999 May 28 2004 Nov 05 FEATURES High DC current gain (min. 1000) High current (max. 1 A) Low voltage (max. 80 V) Integrated
CAN bus ESD protection diode
Rev. 04 15 February 2008 Product data sheet 1. Product profile 1.1 General description in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package designed to protect two automotive Controller
INTEGRATED CIRCUITS DATA SHEET TDA9181
INTEGRATED CIRCUITS DATA SHEET File under Integrated Circuits, IC2 2 Nov 22 FEATURES One-chip multistandard adaptive comb filter Cross luminance reduction Cross colour reduction No chroma trap, therefore
N-channel enhancement mode TrenchMOS transistor
FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d V DSS = V Low on-state resistance Fast switching I D = A High thermal cycling performance Low thermal resistance R DS(ON) mω (V GS = V) g s R DS(ON)
DATA SHEET. MMBT3904 NPN switching transistor DISCRETE SEMICONDUCTORS. Product data sheet Supersedes data of 2002 Oct 04. 2004 Feb 03.
DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D088 Supersedes data of 2002 Oct 04 2004 Feb 03 FEATURES Collector current capability I C = 200 ma Collector-emitter voltage V CEO = 40 V. APPLICATIONS
ESDLIN1524BJ. Transil, transient voltage surge suppressor diode for ESD protection. Features. Description SOD323
Transil, transient voltage surge suppressor diode for ESD protection Datasheet production data Features Max peak pulse power 160 W (8/0 µs) Asymmetrical bidirectional device Stand-off voltage: 15 and 4
DATA SHEET. TDA8703 8-bit high-speed analog-to-digital converter INTEGRATED CIRCUITS. 1996 Aug 26
INTEGRATED CIRCUITS DATA SHEET 8-bit high-speed analog-to-digital converter Supersedes data of April 1993 File under Integrated Circuits, IC02 1996 Aug 26 8-bit high-speed analog-to-digital converter FEATURES
IP4234CZ6. 1. Product profile. Single USB 2.0 ESD protection to IEC 61000-4-2 level 4. 1.1 General description. 1.2 Features. 1.
Rev. 01 16 April 2009 Product data sheet 1. Product profile 1.1 General description The is designed to protect Input/Output (I/O) USB 2.0 ports, that are sensitive to capacitive loads, from being damaged
HCF4001B QUAD 2-INPUT NOR GATE
QUAD 2-INPUT NOR GATE PROPAGATION DELAY TIME: t PD = 50ns (TYP.) at V DD = 10V C L = 50pF BUFFERED INPUTS AND OUTPUTS STANDARDIZED SYMMETRICAL OUTPUT CHARACTERISTICS QUIESCENT CURRENT SPECIFIED UP TO 20V
DISCRETE SEMICONDUCTORS DATA SHEET
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 Supersedes data of 1999 Apr 23 2001 Oct 10 FEATURES High current (max. 1 A) Low voltage (max. 80 V). APPLICATIONS Audio and video amplifiers. PINNING
Wideband 300 W push-pull FM amplifier using BLV25 transistors
APPLICATION NOTE Wideband 300 W push-pull FM amplifier using BLV25 transistors CONTENTS 1 INTRODUCTION 2 AMPLIFIER DESIGN THEORY 2.1 The output network 2.2 The input network 2.3 Bias components 3 PRACTICAL
logic level for RCD/ GFI/ LCCB applications
logic level for RCD/ GFI/ LCCB applications BT68W series GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated, sensitive gate SYMBOL PARAMETER MAX. MAX. MAX. MAX. UNIT thyristors in a plastic envelope
HCF4010B HEX BUFFER/CONVERTER (NON INVERTING)
HEX BUFFER/CONVERTER (NON INVERTING) PROPAGATION DELAY TIME: t PD = 50ns (Typ.) at V DD = 10V C L = 50pF HIGH TO LOW LEVEL LOGIC CONVERSION MULTIPLEXER: 1 TO 6 OR 6 TO 1 HIGH "SINK" AND "SOURCE" CURRENT
INTEGRATED CIRCUITS. 74F74 Dual D-type flip-flop. Product specification Supercedes data of 1990 Oct 23 IC15 Data Handbook.
INTEGRATED CIRCUITS Supercedes data of 1990 Oct 23 IC15 Data Handbook 1996 Mar 12 FEATURE Industrial temperature range available ( 40 C to +85 C) DESCRIPTION The is a dual positive edge-triggered D-type
D-PAK version of BUK117-50DL
D-PK version of BUK117-50DL DESCRIPTION QUICK REFERENCE DT Monolithic temperature and SYMBOL PRMETER MX. UNIT overload protected logic level power MOSFET in TOPFET2 technology V DS Continuous drain source
AMIS-42673. High-Speed 3.3 V Digital Interface CAN Transceiver
AMIS-43 High-Speed 3.3 V Digital Interface CAN Transceiver Description The AMIS 43 CAN transceiver is the interface between a controller area network (CAN) protocol controller and the physical bus. It
INTEGRATED CIRCUITS DATA SHEET. TDA3629 Light position controller. 1996 Sep 04. Product specification File under Integrated Circuits, IC18
INTEGRATED CIRCUITS DATA SHEET File under Integrated Circuits, IC18 1996 Sep 04 FEATURES Low positional error Low noise sensitivity due to hysteresis Low supply current Thermally protected Broken wire
SMD version of BUK118-50DL
DESCRIPTION QUICK REFERENCE DT Monolithic temperature and SYMBOL PRMETER MX. UNIT overload protected logic level power MOSFET in TOPFET2 technology V DS Continuous drain source voltage 50 V assembled in
DATA SHEET. PBSS5540Z 40 V low V CEsat PNP transistor DISCRETE SEMICONDUCTORS. Product data sheet Supersedes data of 2001 Jan 26. 2001 Sep 21.
DISCRETE SEMICONDUCTORS DATA SHEET fpage M3D87 PBSS554Z 4 V low V CEsat PNP transistor Supersedes data of 21 Jan 26 21 Sep 21 FEATURES Low collector-emitter saturation voltage High current capability Improved
Table 1. Absolute maximum ratings (T amb = 25 C) Symbol Parameter Value Unit. ISO 10605 - C = 330 pf, R = 330 Ω : Contact discharge Air discharge
Automotive dual-line Transil, transient voltage suppressor (TVS) for CAN bus Datasheet - production data Complies with the following standards ISO 10605 - C = 150 pf, R = 330 Ω : 30 kv (air discharge)
40 V, 200 ma NPN switching transistor
Rev. 01 21 July 2009 Product data sheet BOTTOM VIEW 1. Product profile 1.1 General description NPN single switching transistor in a SOT883 (SC-101) leadless ultra small Surface-Mounted Device (SMD) plastic
45 V, 100 ma NPN/PNP general-purpose transistor
Rev. 4 18 February 29 Product data sheet 1. Product profile 1.1 General description NPN/PNP general-purpose transistor pair in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package.
logic level for RCD/ GFI applications
logic level for RCD/ GFI applications BT68 series GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated, sensitive gate SYMBOL PARAMETER MAX. MAX. MAX. MAX. UNIT thyristors in a plastic envelope, intended
Medium power Schottky barrier single diode
Rev. 03 17 October 2008 Product data sheet 1. Product profile 1.1 General description Planar medium power Schottky barrier single diode with an integrated guard ring for stress protection, encapsulated
65 V, 100 ma PNP/PNP general-purpose transistor
Rev. 02 19 February 2009 Product data sheet 1. Product profile 1.1 General description PNP/PNP general-purpose transistor pair in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package.
INTEGRATED CIRCUITS. NE558 Quad timer. Product data Supersedes data of 2001 Aug 03. 2003 Feb 14
INTEGRATED CIRCUITS Supersedes data of 2001 Aug 03 2003 Feb 14 DESCRIPTION The Quad Timers are monolithic timing devices which can be used to produce four independent timing functions. The output sinks
VN05N. High side smart power solid state relay PENTAWATT. Features. Description
High side smart power solid state relay Features Type V DSS R DS(on) I OUT V CC VN05N 60 V 0.18 Ω 13 A 26 V Output current (continuous): 13A @ Tc=25 C 5V logic level compatible input Thermal shutdown Under
74F257A Quad 2-line to 1-line selector/multiplexer, non-inverting (3-State)
INTEGRATED CIRCUITS Quad 2-line to 1-line selector/multiplexer, non-inverting (3-State) 1995 Mar 31 IC15 Data Handbook Philips Semiconductors Quad 2-line to 1-line selector/multiplexer, non-inverting (3-State)
74HC02; 74HCT02. 1. General description. 2. Features and benefits. Ordering information. Quad 2-input NOR gate
Rev. 5 26 November 2015 Product data sheet 1. General description 2. Features and benefits The is a quad 2-input NOR gate. Inputs include clamp diodes. This enables the use of current limiting resistors
DISCRETE SEMICONDUCTORS DATA SHEET BC856; BC857; BC858
DISCRETE SEMICONDUCTORS DATA SHEET Supersedes data of 23 Apr 9 24 Jan 16 FEATURES Low current (max. 1 ma) Low voltage (max. 65 V). APPLICATIONS General purpose switching and amplification. PINNING PIN
8-bit binary counter with output register; 3-state
Rev. 3 24 February 2016 Product data sheet 1. General description The is an 8-bit binary counter with a storage register and 3-state outputs. The storage register has parallel (Q0 to Q7) outputs. The binary
TDA2822 DUAL POWER AMPLIFIER SUPPLY VOLTAGE DOWN TO 3 V LOW CROSSOVER DISTORSION LOW QUIESCENT CURRENT BRIDGE OR STEREO CONFIGURATION
TDA2822 DUAL POER AMPLIFIER SUPPLY VOLTAGE DON TO 3 V. LO CROSSOVER DISTORSION LO QUIESCENT CURRENT BRIDGE OR STEREO CONFIGURATION DESCRIPTION The TDA2822 is a monolithic integrated circuit in 12+2+2 powerdip,
74HC238; 74HCT238. 3-to-8 line decoder/demultiplexer
Rev. 4 27 January 2016 Product data sheet 1. General description 2. Features and benefits 3. Ordering information The decodes three binary weighted address inputs (A0, A1 and A2) to eight mutually exclusive
10 ma LED driver in SOT457
SOT457 in SOT457 Rev. 1 20 February 2014 Product data sheet 1. Product profile 1.1 General description LED driver consisting of resistor-equipped PNP transistor with two diodes on one chip in an SOT457
ETP01-xx21. Protection for Ethernet lines. Features. Description. Applications. Benefits. Complies with the following standards
ETP0-xx2 Protection for Ethernet lines Features Differential and common mode protection Telcordia GR089 Intrabuilding: 50 A, 2/0 µs ITU-T K20/2: 40 A, 5/30 µs Low capacitance: 3 pf max at 0 V UL94 V0 approved
74HC154; 74HCT154. 4-to-16 line decoder/demultiplexer
Rev. 7 29 February 2016 Product data sheet 1. General description 2. Features and benefits 3. Ordering information The is a. It decodes four binary weighted address inputs (A0 to A3) to sixteen mutually
PESDxU1UT series. 1. Product profile. Ultra low capacitance ESD protection diode in SOT23 package. 1.1 General description. 1.
Rev. 02 20 August 2009 Product data sheet 1. Product profile 1.1 General description Ultra low capacitance ElectroStatic Discharge (ESD) protection diode in a SOT23 (TO-236AB) small SMD plastic package
74HC138; 74HCT138. 3-to-8 line decoder/demultiplexer; inverting
Rev. 6 28 December 2015 Product data sheet 1. General description 2. Features and benefits 3. Ordering information The decodes three binary weighted address inputs (A0, A1 and A2) to eight mutually exclusive
DATA SHEET. PMEGXX10BEA; PMEGXX10BEV 1 A very low V F MEGA Schottky barrier rectifier DISCRETE SEMICONDUCTORS
DISCRETE SEMICONDUCTORS DATA SHEET Supersedes data of 24 Apr 2 24 Jun 4 FEATURES Forward current: A Reverse voltages: 2 V, 3 V, 4 V Very low forward voltage Ultra small and very small plastic SMD package
MC33079. Low noise quad operational amplifier. Features. Description
Low noise quad operational amplifier Datasheet production data Features Low voltage noise: 4.5 nv/ Hz High gain bandwidth product: 15 MHz High slew rate: 7 V/µs Low distortion: 0.002% Large output voltage
logic level for RCD/ GFI/ LCCB applications
logic level for RCD/ GFI/ LCCB applications BT68GW GENERL DESCRIPTION QUICK REFERENCE DT Passivated, sensitive gate thyristor in a plastic SYMBOL PRMETER MX. UNIT envelope suitable for surface mounting,
LM2901. Low-power quad voltage comparator. Features. Description
Low-power quad voltage comparator Features Wide single supply voltage range or dual supplies for all devices: +2 V to +36 V or ±1 V to ±18 V Very low supply current (1.1 ma) independent of supply voltage
L293B L293E PUSH-PULL FOUR CHANNEL DRIVERS. OUTPUT CURRENT 1A PER CHANNEL PEAK OUTPUT CURRENT 2A PER CHANNEL (non repetitive) INHIBIT FACILITY
L293B L293E PUSH-PULL FOUR CHANNEL DRIVERS OUTPUT CURRENT 1A PER CHANNEL PEAK OUTPUT CURRENT 2A PER CHANNEL (non repetitive) INHIBIT FACILITY. HIGH NOISE IMMUNITY SEPARATE LOGIC SUPPLY OVERTEMPERATURE
HCC/HCF4032B HCC/HCF4038B
HCC/HCF4032B HCC/HCF4038B TRIPLE SERIAL ADDERS INERT INPUTS ON ALL ADDERS FOR SUM COMPLEMENTING APPLICATIONS FULLY STATIC OPERATION...DC TO 10MHz (typ.) @ DD = 10 BUFFERED INPUTS AND OUTPUTS SINGLE-PHASE
UA741. General-purpose single operational amplifier. Features. Applications. Description. N DIP8 (plastic package)
General-purpose single operational amplifier Datasheet - production data N DIP8 (plastic package) D SO8 (plastic micropackage) Pin connections (top view) 1 - Offset null 1 2 - Inverting input 3 - Non-inverting
HCF4028B BCD TO DECIMAL DECODER
BCD TO DECIMAL DECODER BCD TO DECIMAL DECODING OR BINARY TO OCTAL DECODING HIGH DECODED OUTPUT DRIVE CAPABILITY "POSITIVE LOGIC" INPUTS AND OUTPUTS: DECODED OUTPUTS GO HIGH ON SELECTION MEDIUM SPEED OPERATION
74HCU04. 1. General description. 2. Features and benefits. 3. Ordering information. Hex unbuffered inverter
Rev. 7 8 December 2015 Product data sheet 1. General description The is a hex unbuffered inverter. Inputs include clamp diodes. This enables the use of current limiting resistors to interface inputs to
The 74LVC1G11 provides a single 3-input AND gate.
Rev. 8 17 September 2015 Product data sheet 1. General description The provides a single 3-input AND gate. The input can be driven from either 3.3 V or 5 V devices. This feature allows the use of this
