DATA SHEET. TDA1575T FM front end circuit for CENELEC EN applications INTEGRATED CIRCUITS
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1 INTEGRATED CIRCUITS DATA SHEET Supersedes data of October 1990 File under Integrated Circuits, IC01 April 1993
2 FEATURES Bipolar integrated FM front end circuit, designed for use in car radios and home receivers Fulfils CENELEC EN requirements Radio frequency range of 76 to 90 MHz (Japan) or 87.5 to 108 MHz (Europe, USA) Low noise oscillator, buffered oscillator output Double balanced mixer Internal buffered mixer driving Linear IF amplifier, suitable for ceramic IF filters Regulated reference voltage. QUICK REFERENCE DATA SYMBOL PARAMETER MIN. TYP. MAX. UNIT V P supply voltage V I P supply current, without mixer 23 ma V REF reference voltage output 4.2 V Z I mixer input impedance 14 Ω NF noise figure of mixer 9 db EMF1 3rd order intermodulation 115 dbµv V OSC oscillator buffer output signal (RMS value) 75 mv THD total harmonic distortion 15 dbc G v IF gain 30 db NF IF noise figure 6.5 db Z I IF input impedance 300 Ω Z O IF output impedance 300 Ω EMF2 AGC wideband threshold (RMS value) 17 mv ORDERING INFORMATION EXTENDED PACKAGE TYPE NUMBER PINS PIN POSITION MATERIAL CODE 16 mini-pack plastic SOT109A (1) Note 1. SOT109-1; 1996 August 29. April
3 Coils TOKO L1: MC HNE S14; L = 78 nh, N = 4 turns L2: MC-111 E516 HNS ; L = 80 nh L3: A119 ACS FTT Fig.1 Block diagram and test circuit. April
4 PINNING SYMBOL PIN DESCRIPTION MIXI1 1 RF input 1 to mixer MIXI2 2 RF input 2 to mixer AGCI 3 HF input to automatic gain control GND 4 ground (0 V) V REF 5 reference voltage output OSCO 6 oscillator output OSCI1 7 oscillator input 1 OSCI2 8 oscillator input 2 LO 9 buffered oscillator output IFO 10 linear FM IF output IFI1 11 FM IF input 1 IFI2 12 FM IF input 2 V P 13 supply voltage (+8.5 V) MIXO1 14 mixer output 1 MIXO2 15 mixer output 2 AGCO 16 automatic gain control output Fig.2 Pin configuration. LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER MIN. MAX. UNIT V P supply voltage (pin 13) 0 12 V V 14, 15 voltage at mixer output 0 V P V P tot total power dissipation mw T stg storage temperature range C T amb operating ambient temperature range C V ESD electrostatic handling (see note 1) all pins except 3 and 10 ±2000 V pin V 1000 V pin V 2000 V Note to the limiting values 1. Equivalent to discharging a 100 pf capacitor through a 1.5 kω series resistor. April
5 CHARACTERISTICS V P = 8.5 V and T amb = +25 C, measurements taken in Fig.1 with f 0 = 98 MHz (EMF1) unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V P supply voltage (pin 13) V I P supply current without mixer ma V REF reference voltage (pin 5) I 5 3 ma V Mixer I mixer supply current (pins 14 and 15) 4 ma V 1,2 DC voltage input (pins 1 and 2) 1 V Z 1,2 input impedance 14 Ω V 14,15 DC output voltage (pins 14 and 15) 4 10 V C 14,15 output capacitance 13 pf G P conversion power gain note 1 14 db EMF1 IP3 3rd order intercept point 115 dbµv NF noise figure 9 db total noise figure including transforming network 11 db Oscillator V 7,8 DC input voltage (pins 7 and 8) 1.3 V V 6 DC output voltage (pin 6) 2.0 V f residual FM at pin 6 f = 300 to Hz; de-emphasis 50 µs 2.2 Hz Oscillator buffered output (pin 9) V O output signal (RMS value) R L = 500 Ω; C L = 2 pf 75 mv V 9 DC output voltage 6 V R 9 DC output resistor 950 Ω THD total harmonic distortion 15 dbc f S spurious frequencies EMF1 = 2 V; R S = 50 Ω; f OSC = MHz 37 dbc Automatic gain control (AGC) R 3 input resistance (pin 3) 4 kω C 3 input capacitance 3 pf V 16 AGC output swing (DC) Figs 3 and V P 0.3 V I 16 output current at I 3 = 0 V 16 = 1 2 V P µa output current at U 3 = 2 V V 16 = 7 to 10 V 2 5 ma EMF2 threshold (RMS value) I 16 = 0; V 16 = 1 2 V P ; Figs 4 and 5 17 mv April
6 SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Linear IF amplifier IF = 10.7 MHz V 11,12 DC input voltage (pins 11 and 12) 1.25 V Z input impedance Ω C input capacitance 13 pf V 10 DC output voltage (pin 10) 4.4 V Z 10 output impedance Ω C 10 output capacitance 3 pf V O output signal (RMS value) 1 db compression 650 mv G v IF voltage gain (20 log (V 10 4 / V )) db G v IF voltage gain deviation T amb = 40 to +85 C 0 db NF noise figure R S = 300 Ω 6.5 db Note 1. G P = 10 log (4V o mix 10.7 MHz) / (EMF2 98 MHz) 2 (R S1 / R ML ). Fig.3 AGC output voltage V 16 as a function of V i3 RMS at I 16 = 0, measured in test circuit Fig.1. Fig.4 AGC output current I 16 as a function of V i3 RMS at V 16 = 8.5 V, measured in test circuit Fig.1. April
7 APPLICATION INFORMATION Operating characteristics Measured in application circuit Fig.7, according to CENELEC EN 55020, Chapter 4.1 (passive interference suppression). Measurements are shown in Figs. 8 and 9. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V S supply voltage V I S total supply current 37 ma f RF tuning range of RF input MHz V tune tuning voltage of RF input 1 7 V G gain (20 log V O IF / V ant ) 43 db V i ant input sensitivity S/N = 26 db; 2 µv R ant = 150 Ω IR image rejection f = 98 MHz 64 db RSS repeat spot suppression f = 98 MHz; 89 db V i ant = 10 µv DBS double beat suppression f1 = 93 MHz; f2 = 98 MHz DBS1 f tune = 88 MHz 81 db DBS2 f tune = 103 MHz 80 db DBS3 f tune = MHz 85 db CBS continuous beat suppression f1 = 90 MHz; f2 = MHz f tune = 95 MHz 90 db SG1: Wanted carrier; modulated with f = 1 khz, f = ±40 khz (for audio reference) SG2: Unwanted carrier; modulated with f = 1 khz, FM: f = ±40 khz (in band) or AM: m = 80% (out of band) increase level of SG2 until S/N = 26 db w.r.t. wanted modulation (for car radio, home radio S/N = 40 db) Fig.5 Set-up for CENELEC EN passive interference measurements. April
8 Fig.6 PCB layout of FM front end unit. April
9 Fig.7 Application circuit of FM front end with and FET-preamplifier. April
10 Fig.8 Interference level as a function of detuning for S/N = 26 db; IN-BAND passive interference (CENELEC EN 55020). Fig.9 Interference level as a function of detuning for S/N = 26 db; OUT-OF-BAND passive interference (CENELEC EN 55020). April
11 Fig.10 Internal circuits. April
12 PACKAGE OUTLINE SO16: plastic small outline package; 16 leads; body width 3.9 mm SOT109-1 D E A X c y H E v M A Z 16 9 Q A 2 A 1 (A ) 3 A pin 1 index θ L p 1 8 L e b p w M detail X mm scale DIMENSIONS (inch dimensions are derived from the original mm dimensions) UNIT mm inches A max A 1 A 2 A 3 b p c D (1) E (1) e H (1) E L L p Q v w y Z Note 1. Plastic or metal protrusions of 0.15 mm maximum per side are not included θ o 8 o OUTLINE VERSION REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE SOT E07S MS-012AC April
13 SOLDERING Introduction There is no soldering method that is ideal for all IC packages. Wave soldering is often preferred when through-hole and surface mounted components are mixed on one printed-circuit board. However, wave soldering is not always suitable for surface mounted ICs, or for printed-circuits with high population densities. In these situations reflow soldering is often used. This text gives a very brief insight to a complex technology. A more in-depth account of soldering ICs can be found in our IC Package Databook (order code ). Reflow soldering Reflow soldering techniques are suitable for all SO packages. Reflow soldering requires solder paste (a suspension of fine solder particles, flux and binding agent) to be applied to the printed-circuit board by screen printing, stencilling or pressure-syringe dispensing before package placement. Several techniques exist for reflowing; for example, thermal conduction by heated belt. Dwell times vary between 50 and 300 seconds depending on heating method. Typical reflow temperatures range from 215 to 250 C. Preheating is necessary to dry the paste and evaporate the binding agent. Preheating duration: 45 minutes at 45 C. Wave soldering Wave soldering techniques can be used for all SO packages if the following conditions are observed: A double-wave (a turbulent wave with high upward pressure followed by a smooth laminar wave) soldering technique should be used. The longitudinal axis of the package footprint must be parallel to the solder flow. The package footprint must incorporate solder thieves at the downstream end. During placement and before soldering, the package must be fixed with a droplet of adhesive. The adhesive can be applied by screen printing, pin transfer or syringe dispensing. The package can be soldered after the adhesive is cured. Maximum permissible solder temperature is 260 C, and maximum duration of package immersion in solder is 10 seconds, if cooled to less than 150 C within 6 seconds. Typical dwell time is 4 seconds at 250 C. A mildly-activated flux will eliminate the need for removal of corrosive residues in most applications. Repairing soldered joints Fix the component by first soldering two diagonallyopposite end leads. Use only a low voltage soldering iron (less than 24 V) applied to the flat part of the lead. Contact time must be limited to 10 seconds at up to 300 C. When using a dedicated tool, all other leads can be soldered in one operation within 2 to 5 seconds between 270 and 320 C. April
14 DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. April
15 NOTES April
16 a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel , Fax Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel , Fax Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6, MINSK, Tel , Fax Belgium: see The Netherlands Brazil: see South America Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor, 51 James Bourchier Blvd., 1407 SOFIA, Tel , Fax Canada: PHILIPS SEMICONDUCTORS/COMPONENTS, Tel China/Hong Kong: 501 Hong Kong Industrial Technology Centre, 72 Tat Chee Avenue, Kowloon Tong, HONG KONG, Tel , Fax Colombia: see South America Czech Republic: see Austria Denmark: Prags Boulevard 80, PB 1919, DK-2300 COPENHAGEN S, Tel , Fax Finland: Sinikalliontie 3, FIN ESPOO, Tel , Fax France: 4 Rue du Port-aux-Vins, BP317, SURESNES Cedex, Tel , Fax Germany: Hammerbrookstraße 69, D HAMBURG, Tel , Fax Greece: No. 15, 25th March Street, GR TAVROS/ATHENS, Tel /239, Fax Hungary: see Austria India: Philips INDIA Ltd, Shivsagar Estate, A Block, Dr. Annie Besant Rd. Worli, MUMBAI , Tel , Fax Indonesia: see Singapore Ireland: Newstead, Clonskeagh, DUBLIN 14, Tel , Fax Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053, TEL AVIV 61180, Tel , Fax Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3, MILANO, Tel , Fax Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108, Tel , Fax Korea: Philips House, Itaewon-dong, Yongsan-ku, SEOUL, Tel , Fax Malaysia: No. 76 Jalan Universiti, PETALING JAYA, SELANGOR, Tel , Fax Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905, Tel Middle East: see Italy Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB, Tel , Fax New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND, Tel , Fax Norway: Box 1, Manglerud 0612, OSLO, Tel , Fax Philippines: Philips Semiconductors Philippines Inc., 106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI, Metro MANILA, Tel , Fax Poland: Ul. Lukiska 10, PL WARSZAWA, Tel , Fax Portugal: see Spain Romania: see Italy Russia: Philips Russia, Ul. Usatcheva 35A, MOSCOW, Tel , Fax Singapore: Lorong 1, Toa Payoh, SINGAPORE 1231, Tel , Fax Slovakia: see Austria Slovenia: see Italy South Africa: S.A. PHILIPS Pty Ltd., Main Road Martindale, 2092 JOHANNESBURG, P.O. Box 7430 Johannesburg 2000, Tel , Fax South America: Rua do Rocio 220, 5th floor, Suite 51, São Paulo, SÃO PAULO - SP, Brazil, Tel , Fax Spain: Balmes 22, BARCELONA, Tel , Fax Sweden: Kottbygatan 7, Akalla, S STOCKHOLM, Tel , Fax Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH, Tel , Fax Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1, TAIPEI, Taiwan Tel , Fax Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd., 209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260, Tel , Fax Turkey: Talatpasa Cad. No. 5, GÜLTEPE/ISTANBUL, Tel , Fax Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7, KIEV, Tel , Fax United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes, MIDDLESEX UB3 5BX, Tel , Fax United States: 811 East Arques Avenue, SUNNYVALE, CA , Tel Uruguay: see South America Vietnam: see Singapore Yugoslavia: PHILIPS, Trg N. Pasica 5/v, BEOGRAD, Tel , Fax For all other countries apply to: Philips Semiconductors, Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax Internet: Philips Electronics N.V SCA54 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands /00/03/pp16 Date of release: April 1993 Document order number:
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INTEGRATED CIRCUITS. 74LVC08A Quad 2-input AND gate. Product specification IC24 Data Handbook. 1997 Jun 30
INTEGRATED CIRCUITS IC24 Data Handbook 1997 Jun 30 FEATURES Wide supply voltage range of 1.2 V to 3.6 V In accordance with JEDEC standard no. 8-1A Inputs accept voltages up to 5.5 V CMOS low power consumption
BIPOLAR ANALOG INTEGRATED CIRCUIT
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Table 1. Absolute maximum ratings (T amb = 25 C) Symbol Parameter Value Unit. ISO 10605 - C = 330 pf, R = 330 Ω : Contact discharge Air discharge
Automotive dual-line Transil, transient voltage suppressor (TVS) for CAN bus Datasheet - production data Complies with the following standards ISO 10605 - C = 150 pf, R = 330 Ω : 30 kv (air discharge)
DATA SHEET. BC875; BC879 NPN Darlington transistors DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1999 May 28.
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 Supersedes data of 1999 May 28 2004 Nov 05 FEATURES High DC current gain (min. 1000) High current (max. 1 A) Low voltage (max. 80 V) Integrated
UA741. General-purpose single operational amplifier. Features. Applications. Description. N DIP8 (plastic package)
General-purpose single operational amplifier Datasheet - production data N DIP8 (plastic package) D SO8 (plastic micropackage) Pin connections (top view) 1 - Offset null 1 2 - Inverting input 3 - Non-inverting
DISCRETE SEMICONDUCTORS DATA SHEET. BFQ34 NPN 4 GHz wideband transistor. Product specification File under Discrete Semiconductors, SC14
DISCRETE SEMICONDUCTORS DATA SHEET File under Discrete Semiconductors, SC4 September 995 DESCRIPTION PINNING NPN transistor encapsulated in a 4 lead SOTA envelope with a ceramic cap. All leads are isolated
SA605 High performance low power mixer FM IF system
RF COMMUNICATIONS PRODUCTS High performance low power mixer FM IF system Replaces data of November 3, 1992 RF Communications Handbook 1997 Nov 07 Philips Semiconductors DESCRIPTION The is a high performance
DDSL01. Secondary protection for DSL lines. Features. Description
Secondary protection for DSL lines Features Stand off voltage: 30 V Surge capability: I pp = 30 A 8/20 µs Low capacitance device: 4.5 pf at 2 V RoHS package Low leakage current: 0.5 µa at 25 C 3 2 Description
ESDLIN1524BJ. Transil, transient voltage surge suppressor diode for ESD protection. Features. Description SOD323
Transil, transient voltage surge suppressor diode for ESD protection Datasheet production data Features Max peak pulse power 160 W (8/0 µs) Asymmetrical bidirectional device Stand-off voltage: 15 and 4
TDA2003 10W CAR RADIO AUDIO AMPLIFIER
TDA2003 10W CAR RADIO AUDIO AMPLIFIER DESCRIPTION The TDA 2003 has improved performance with the same pin configuration as the TDA 2002. The additional features of TDA 2002, very low number of external
N-channel enhancement mode TrenchMOS transistor
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TL084 TL084A - TL084B
A B GENERAL PURPOSE JFET QUAD OPERATIONAL AMPLIFIERS WIDE COMMONMODE (UP TO V + CC ) AND DIFFERENTIAL VOLTAGE RANGE LOW INPUT BIAS AND OFFSET CURRENT OUTPUT SHORTCIRCUIT PROTECTION HIGH INPUT IMPEDANCE
SiGe:C Low Noise High Linearity Amplifier
Rev. 2 21 February 2012 Product data sheet 1. Product profile 1.1 General description The is a low noise high linearity amplifier for wireless infrastructure applications. The LNA has a high input and
LM833 LOW NOISE DUAL OPERATIONAL AMPLIFIER
LOW NOISE DUAL OPERATIONAL AMPLIFIER LOW VOLTAGE NOISE: 4.5nV/ Hz HIGH GAIN BANDWIDTH PRODUCT: 15MHz HIGH SLEW RATE: 7V/µs LOW DISTORTION:.2% EXCELLENT FREQUENCY STABILITY ESD PROTECTION 2kV DESCRIPTION
ETP01-xx21. Protection for Ethernet lines. Features. Description. Applications. Benefits. Complies with the following standards
ETP0-xx2 Protection for Ethernet lines Features Differential and common mode protection Telcordia GR089 Intrabuilding: 50 A, 2/0 µs ITU-T K20/2: 40 A, 5/30 µs Low capacitance: 3 pf max at 0 V UL94 V0 approved
BC107/ BC108/ BC109 Low Power Bipolar Transistors
TO-18 Features: NPN Silicon Planar Epitaxial Transistors. Suitable for applications requiring low noise and good h FE linearity, eg. audio pre-amplifiers, and instrumentation. TO-18 Metal Can Package Dimension
TDA7448 6 CHANNEL VOLUME CONTROLLER 1 FEATURES 2 DESCRIPTION. Figure 1. Package
6 CHANNEL CONTROLLER FEATURES 6 CHANNEL INPUTS 6 CHANNEL OUTPUTS ATTENUATION RANGE OF 0 TO -79dB CONTROL IN.0dB STEPS 6 CHANNEL INDEPENDENT CONTROL ALL FUNCTION ARE PROGRAMMABLE VIA SERIAL BUS DESCRIPTION
DATA SHEET. PBSS5540Z 40 V low V CEsat PNP transistor DISCRETE SEMICONDUCTORS. Product data sheet Supersedes data of 2001 Jan 26. 2001 Sep 21.
DISCRETE SEMICONDUCTORS DATA SHEET fpage M3D87 PBSS554Z 4 V low V CEsat PNP transistor Supersedes data of 21 Jan 26 21 Sep 21 FEATURES Low collector-emitter saturation voltage High current capability Improved
40 V, 200 ma NPN switching transistor
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65 V, 100 ma PNP/PNP general-purpose transistor
Rev. 02 19 February 2009 Product data sheet 1. Product profile 1.1 General description PNP/PNP general-purpose transistor pair in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package.
LM134-LM234-LM334. Three terminal adjustable current sources. Features. Description
Three terminal adjustable current sources Features Operates from 1V to 40V 0.02%/V current regulation Programmable from 1µA to 10mA ±3% initial accuracy Description The LM134/LM234/LM334 are 3-terminal
TDA2004R. 10 + 10 W stereo amplifier for car radio. Features. Description
10 + 10 W stereo amplifier for car radio Features Low distortion Low noise Protection against: Output AC short circuit to ground Overrating chip temperature Load dump voltage surge Fortuitous open ground
L78MxxAB L78MxxAC. Precision 500 ma regulators. Features. Description
L78MxxAB L78MxxAC Precision 500 ma regulators Features Output current to 0.5 A Output voltages of 5; 6; 8; 9; 10; 12; 15; 18; 24 V Thermal overload protection Short circuit protection Output transition
W- Series. Features: WOB. Mechanical Data Case : Moulded plastic. Lead : Solder plated. Weight : 1.10 grams. Page <1> 15/07/08 V1.
Features: Surge overload ratings to 40 amperes peak. Ideal for printed circuit board. Reliable low cost construction. High temperature soldering guaranteed: 260 C/10 seconds/0.375inch (9.5mm) lead lengths
LM337. Three-terminal adjustable negative voltage regulators. Features. Description
Three-terminal adjustable negative voltage regulators Datasheet - production data current limit, thermal overload protection and safe area protection. All overload protection circuitry remains fully functional
LOW POWER NARROWBAND FM IF
Order this document by MC336B/D The MC336B includes an Oscillator, Mixer, Limiting Amplifier, Quadrature Discriminator, Active Filter, Squelch, Scan Control and Mute Switch. This device is designed for
HCF4001B QUAD 2-INPUT NOR GATE
QUAD 2-INPUT NOR GATE PROPAGATION DELAY TIME: t PD = 50ns (TYP.) at V DD = 10V C L = 50pF BUFFERED INPUTS AND OUTPUTS STANDARDIZED SYMMETRICAL OUTPUT CHARACTERISTICS QUIESCENT CURRENT SPECIFIED UP TO 20V
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32 W hi-fi audio power amplifier Features High output power (50 W music power IEC 268.3 rules) High operating supply voltage (50 V) Single or split supply operations Very low distortion Short-circuit protection
IP4234CZ6. 1. Product profile. Single USB 2.0 ESD protection to IEC 61000-4-2 level 4. 1.1 General description. 1.2 Features. 1.
Rev. 01 16 April 2009 Product data sheet 1. Product profile 1.1 General description The is designed to protect Input/Output (I/O) USB 2.0 ports, that are sensitive to capacitive loads, from being damaged
Description. Table 1. Device summary
2 A positive voltage regulator IC Description Datasheet - production data Features TO-220 Output current up to 2 A Output voltages of 5; 7.5; 9; 10; 12; 15; 18; 24 V Thermal protection Short circuit protection
4-bit binary full adder with fast carry CIN + (A1 + B1) + 2(A2 + B2) + 4(A3 + B3) + 8(A4 + B4) = = S1 + 2S2 + 4S3 + 8S4 + 16COUT
Rev. 03 11 November 2004 Product data sheet 1. General description 2. Features The is a high-speed Si-gate CMOS device and is pin compatible with low power Schottky TTL (LSTTL). The is specified in compliance
45 V, 100 ma NPN/PNP general-purpose transistor
Rev. 4 18 February 29 Product data sheet 1. Product profile 1.1 General description NPN/PNP general-purpose transistor pair in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package.
HCC/HCF4032B HCC/HCF4038B
HCC/HCF4032B HCC/HCF4038B TRIPLE SERIAL ADDERS INERT INPUTS ON ALL ADDERS FOR SUM COMPLEMENTING APPLICATIONS FULLY STATIC OPERATION...DC TO 10MHz (typ.) @ DD = 10 BUFFERED INPUTS AND OUTPUTS SINGLE-PHASE
SG2525A SG3525A REGULATING PULSE WIDTH MODULATORS
SG2525A SG3525A REGULATING PULSE WIDTH MODULATORS 8 TO 35 V OPERATION 5.1 V REFERENCE TRIMMED TO ± 1 % 100 Hz TO 500 KHz OSCILLATOR RANGE SEPARATE OSCILLATOR SYNC TERMINAL ADJUSTABLE DEADTIME CONTROL INTERNAL
Diode, Schottky SMB/DO-214AA. Page <1> 24/04/08 V1.1. Dimensions Inches (Millimeters)
Features: For surface mounted application. Metal to silicon rectifier, majority carrier conduction. Low forward voltage drop. Easy pick and place. High surge current capability. Plastic material. Epitaxial
INTEGRATED CIRCUITS. NE558 Quad timer. Product data Supersedes data of 2001 Aug 03. 2003 Feb 14
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CAN bus ESD protection diode
Rev. 04 15 February 2008 Product data sheet 1. Product profile 1.1 General description in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package designed to protect two automotive Controller
HCF4056B BCD TO 7 SEGMENT DECODER /DRIVER WITH STROBED LATCH FUNCTION
BCD TO 7 SEGMENT DECODER /DRIVER WITH STROBED LATCH FUNCTION QUIESCENT CURRENT SPECIF. UP TO 20V OPERATION OF LIQUID CRYSTALS WITH CMOS CIRCUITS PROVIDES ULTRA LOW POWER DISPLAY. EQUIVALENT AC OUTPUT DRIVE
How To Make An Electric Static Discharge (Esd) Protection Diode
Rev. 01 0 October 2008 Product data sheet 1. Product profile 1.1 General description Ultra low capacitance bidirectional ElectroStatic Discharge (ESD) protection diodes in small Surface-Mounted Device
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Vertical deflection booster for 3 App TV/monitor applications with 0 V flyback generator Features Figure. Heptawatt package Power amplifier Flyback generator Stand-by control Output current up to 3.0 App
DATA SHEET. BF245A; BF245B; BF245C N-channel silicon field-effect transistors DISCRETE SEMICONDUCTORS
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TL074 TL074A - TL074B
A B LOW NOISE JFET QUAD OPERATIONAL AMPLIFIERS WIDE COMMONMODE (UP TO V + CC ) AND DIFFERENTIAL VOLTAGE RANGE LOW INPUT BIAS AND OFFSET CURRENT LOW NOISE e n = 15nV/ Hz (typ) OUTPUT SHORTCIRCUIT PROTECTION
BC846/BC546 series. 65 V, 100 ma NPN general-purpose transistors. NPN general-purpose transistors in Surface Mounted Device (SMD) plastic packages.
65 V, 00 ma NPN general-purpose transistors Rev. 07 7 November 009 Product data sheet. Product profile. General description NPN general-purpose transistors in Surface Mounted Device (SMD) plastic packages.
DISCRETE SEMICONDUCTORS DATA SHEET M3D848. CGD923 870 MHz, 20 db gain power doubler amplifier. Product specification 2002 Oct 08
DISCRETE SEMICONDUCTORS DATA SHEET M3D848 2002 Oct 08 FEATURES High output capability Excellent linearity Extremely low noise Excellent return loss properties Rugged construction Gold metallization ensures
CLASS-D VERTICAL DEFLECTION AMPLIFIER FOR TV AND MONITOR APPLICATION OUT CFLY + CFLY - BOOT VREG FEEDCAP FREQ. July 2001 1/8
CLASS-D VERTICAL DEFLECTION AMPLIFIER FOR TV AND MONITOR APPLICATION FEATURES PRELIMINARY DATA HIGH EFFICIENCY POWER AMPLIFIER NO HEATSINK SPLIT SUPPLY INTERNAL FLYBACK GENERATOR OUTPUT CURRENT UP TO.5
Description. Table 1. Device summary. Order code Temperature range Package Packaging Marking
14-stage ripple carry binary counter/divider and oscillator Applications Automotive Industrial Computer Consumer Description Datasheet - production data Features Medium speed operation Common reset Fully
