INTEGRATED CIRCUITS DATA SHEET. TDA3629 Light position controller Sep 04. Product specification File under Integrated Circuits, IC18
|
|
|
- Britney Margery Foster
- 9 years ago
- Views:
Transcription
1 INTEGRATED CIRCUITS DATA SHEET File under Integrated Circuits, IC Sep 04
2 FEATURES Low positional error Low noise sensitivity due to hysteresis Low supply current Thermally protected Broken wire and short-circuit indication on SET input Brake function by short-circuiting the motor Hysteresis level set externally. GENERAL DESCRIPTION The (Leucht Weiten Steller, LWS) is a monolithic integrated circuit intended to be used in passenger cars. This device adapts the elevation of the light beam of the head light of the car to a state defined by the car driver using a potentiometer on the dashboard. QUICK REFERENCE DATA Note SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT I P(ss) supply current, steady state note 1 6 ma I P I m supply current, motor active I m < 900 ma 80 ma V m output voltage I m < 700 ma V P Steady state implies that the motor is not running (I m = 0) and V SET = V FB = 0.5V P. V I m output current V P 12.3 V 670 ma I SET motor switch on current level V P = 12 V µa ORDERING INFORMATION PACKAGE TYPE NUMBER NAME DESCRIPTION VERSION DIP8 plastic dual in-line package; 8 leads (300 mil) SOT97-1 T SO16 plastic small outline package; 16 leads; body width 3.9 mm SOT Sep 04 2
3 BLOCK DIAGRAM handbook, full pagewidth V P1 V P2 PROTECTION - OVER VOLTAGE - UNDER VOLTAGE - TEMPERATURE 2(5) SUPPLY 7(12) SHORT-CIRCUIT I SET BROKEN WIRE V P SET 8(16) 3(6) OUT1 FB 1(1) INPUT STAGE I SET WINDOWS AND COMPARATORS OUTPUT STAGES V P 6(11) OUT2 I ref 5(9) MGE632 Pin numbers in parenthesis represent the T. Fig.1 Block diagram Sep 04 3
4 PINNING Note SYMBOL PIN T FB 1 1 feedback input V P1 2 5 supply voltage 1 OUT1 3 6 output 1 (1) 4 2 to 4, 7, 8, 10, 13 to 15 not connected GND 5 9 ground OUT output 2 V P supply voltage 2 SET 8 16 set input DESCRIPTION 1. The pins which are not electrically connected should be connected to a copper area of the printed-circuit board which is as large as possible to improve heat transfer. handbook, halfpage FB 1 16 SET handbook, halfpage FB 1 8 SET V P1 OUT V P2 OUT2 V P1 4 5 T V P2 4 5 GND OUT OUT2 MGE GND MGE634 Fig.2 Pin configuration. Fig.3 Pin configuration T Sep 04 4
5 FUNCTIONAL DESCRIPTION The device is intended to control the elevation of the light beam of a head light of a passenger car. The driver can control the elevation of the light beam by rotating a potentiometer on the dashboard (the setting potentiometer). The device adapts the elevation of the light beam by activating the control motor. The elevation of the head light is fed back to the device by a second potentiometer (the feedback potentiometer). This feedback potentiometer is mechanically coupled to the motor. The device operates only when the supply voltage is within certain limits. The device is switched off outside these boundaries. The under voltage detection detects whether the supply voltage is below the under voltage threshold. The motor will not be activated when this occurs, but it remains short-circuited by the output stages. The over voltage will switch off the total device when the supply voltage is higher than the over voltage threshold. A thermal protection circuit becomes active if the junction temperature exceeds a value of approximately 160 C. This circuit will reduce the motor current, which will result in a lower dissipation and hence a lower chip temperature. This condition will only occur when the motor is blocked at high ambient temperature. A detection of a broken wire of the slider of the setting potentiometer is included because it will be connected to the device by a wire several meters long. This detection circuit prevents the motor from rotating when the wire is broken. In this event the brake will remain active. The protection of V SET to V P circuit prevents the motor from rotating when the voltage at the V SET input is above the threshold value. This can be used to detect whether the wire from the slider of the setting potentiometer is short-circuited to the battery line. A protection of V SET short-circuited to ground is also present. The motor will be stopped if V SET becomes lower than the threshold level. The shaded areas in Fig.4 represent the parts where the short-circuit protection stages are active. Figure 4 shows that a position of 0 mm can not be reached, neither can a position of 100%. The minimum position that can be reached depends on the battery voltage V b, although the maximum position does not. handbook, halfpage 100 position (%) 0 Fig.4 Conversion gain. MGE635 0 V SET(min) V SET(max) V SET (V) V b The device is protected against electrical transients which may occur in an automotive environment. The device will shut off when positive transients on the battery line occur (see Figs 7 and 8). The motor will not be short-circuited in this event. The flyback diodes, illustrated in Fig.1, will remain present. The state of the output stages at the moment when the transient starts is preserved by internal flip-flops. Negative transients on the battery line (see Figs 7 and 8) will result in a set short-circuited to ground fault detection, because it will result in a voltage at the setting input which is below the short-circuited to ground threshold. The device however discharges the electrolytic capacitor during these transients. It will stop functioning when the resulting supply voltage becomes too low Sep 04 5
6 The timing can be divided into several parts starting from a steady state (see Fig.5, the starting point, and Fig.10 for the application diagram): in this state (until T 1 ) a large reference current is active, indicated by the dotted lines. When the setting potentiometer is rotated (started at T 1 and indicated by V SET ) and the input current I SET becomes higher than the reference current I ref (at time T 2 ), the motor will start and the input current will decrease. At the same time the reference current is switched to a low level. During rotation of the motor the input current will decrease until it becomes lower than this low reference current; this occurs at time T 4. At this time the brake becomes active, the motor will stop and the reference current is set to the higher value. The brake is realized by short-circuiting the motor. In general: this system does not use a linear adaptation strategy but an on-off strategy. This results in high accuracy and low noise sensitivity. The brake is active at any time during normal operation when the motor is not active. The polarity of the feedback potentiometer should be such that the voltage at the slider of the feedback potentiometer increases when OUT1 is high and OUT2 is low. handbook, full pagewidth V2 VSET V1 V2 VFB V1 ISET 0 Iref absolute motor current 0 T 1 T 2 T 3 T 4 time MGE636 Fig.5 Timing diagram Sep 04 6
7 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). All voltages are defined with respect to ground. Positive currents flow into the device. Values measured in Fig.10. Notes SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V P supply voltage operating 8 18 V 1. Human body model: equivalent to discharging a 100 pf capacitor through a 1.5 kω resistor. 2. In accordance with IEC An alternative definition of virtual junction temperature T vj is: T vj = T amb + P d R th vj-amb, where R th vj-amb is a fixed value to be used for the calculation of T vj. The rating for T vj limits the allowable combinations of power dissipation P d and ambient temperature T amb. Additional information is given in section Thermal aspects in chapter Test and application information. 3. Wave forms illustrated in Figs 7 and 8 applied to the application diagram, Fig V b = 13 V; T amb = 25 C; duration 50 ms maximum; non repetitive. non-operating V V n voltage on any other pin 0.3 V P V V es electrostatic handling note kv T stg storage temperature C T amb ambient temperature C T vj virtual junction temperature note C V b, tr voltage transients on V b note V R L load resistance note 4 10 Ω t block cumulative blocking time I m = 700 ma 100 h THERMAL CHARACTERISTICS In accordance with IEC SYMBOL PARAMETER VALUE UNIT R th vj-amb thermal resistance from junction to ambient in free air 100 K/W T 105 K/W 1996 Sep 04 7
8 CHARACTERISTICS V P = 12 V; R L = 14 Ω. All voltages are defined with respect to ground. Positive currents flow into the device. Values measured in Fig.10 with R SET = R FB = 20 kω; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Supply V P(min) under voltage threshold 6 8 V V P(max) over voltage threshold T amb = 25 C V T amb = 40 to +105 C V I P(ss) supply current, steady state note 1 6 ma I P I m supply current, motor active I m < 400 ma; note 2 40 ma Setting input (SET) I m < 900 ma; note 2 80 ma V SET operating voltage V P V I SET input current R SET > 20 kω µa V SET(sc) wire short-circuited to ground threshold wire short-circuited to battery threshold output stages switched off 1 V output stages switched off V P V V SET broken ground set pull-up note mv Feedback input (FB) V FB voltage V P V I FB(max) maximum input current R FB > 20 kω µa Motor outputs V m output voltage I m < 700 ma; T amb = 25 C; note 2 I m < 700 ma; T amb = 40 to +105 C; note 2 I m output current V P 12.3 V; T amb = 25 C; note 2 Reference current V P 12.3 V; T amb = 40 to +105 C; note 2 V P 2.9 V V P 3.4 V 670 ma 635 ma I SET motor switch-on level V P = 12 V µa V P = 18 V µa motor switch-off level 2.5 µa 1996 Sep 04 8
9 Notes to the characteristics 1. Steady state implies that the motor is not running (I m = 0) and V SET = V FB = 0.5V P. 2. This is only valid when the temperature protection is not active. 3. V SET is the difference in voltage on the set potentiometer between the situation when the ground wire is interrupted (V SET, br ) and voltage on the set potentiometer during normal operation (when V SET = 0.17V b = 2.72 V). The conditions for this test are: R SET = 20 kω; V b = 16 V; V SET = V SET, br 2.72 V; see Fig.6. handbook, halfpage +V b battery 830 Ω 390 Ω REMAINDER OF MODULE 170 Ω + V SET, br R SET ground ground wire not connected MGE637 The 170 Ω, 830 Ω and 390 Ω resistors form the setting potentiometer in its worst case position. The given situation (combination of V b, R SET and the position of the set potentiometer) forms the worst case situation. The given maximum of V SET guarantees that any other module, connected to the same set potentiometer, will not start to activate its motor, when its motor switch-on level is higher than 0.01V b (R SET 20 kω). Fig.6 Conditions for the test of note 3. QUALITY SPECIFICATION The quality of this device is in accordance with SNW-FQ-611 part E. The numbers of the quality specification can be found in the Quality reference Handbook. The handbook can be ordered using the code Sep 04 9
10 TEST AND APPLICATION INFORMATION Automotive transients handbook, halfpage 112 V b (V) PULSE 2 2 ms 12 0 time 0.5 ms PULSE 1 88 MGE638 Fig.7 Worst case transients on V b (continued in Fig.8). Worst case transients that may occur on the battery line V b of the application (see Fig.10), are the pulses whose wave forms and the corresponding values are as illustrated in Figs 7 and 8. The signal source which generates these pulses (numbered pulses 1 and 2) has a series resistance (R i ) of 10 Ω. These pulses represent for instance the influence of switching of inductors on the battery line. The signal source which generates pulses 3 and 4 has a series resistance of 50 Ω. These pulses represent for instance the influence of ignition on the battery line. Their repetition rate is 100 ms. handbook, full pagewidth ms pause V b (V) PULSE µs 10 ms 100 µs 10 ms time PULSE 4 90 ms pause MGE Fig.8 Worst case transients on V b (continued from Fig.7) Sep 04 10
11 Application diagrams and additional information Two possible application diagrams are shown. The first (see Fig.9) shows the best case: the lowest component count. The second (see Fig.10) shows additional components which may be necessary. Two capacitors are added to meet EMC requirements (one on the V P pins, the second one between the set and feedback input pins). A third capacitor has been added across the motor to suppress current spikes. The given values of these capacitors have to be optimized by experiments carried out on the total application. The resistors do not have to have the same value. The voltage hysteresis is set by means of R SET. The resistor in the feedback input line (R FB ) is present to limit the current during the transients as illustrated in Figs 7 and 8. This resistor should have a value larger than 2 kω. R SET can be chosen freely but must also be larger than 2 kω. A diode is placed in series with the supply line in both applications to protect the device from reverse polarity switching and from damage caused by pulses 1 and 3 in Figs 7 and 8. In the present application a varistor is included in the motor. The electrolytic capacitor of 47 µf should have a very low ESR, for instance as low as 5 Ω at a temperature of 40 C. An extra ceramic capacitor (approximately 100 nf) parallel to it is obligatory when this can not be guaranteed. handbook, full pagewidth +V b 43 V 47 µf V P1 V P2 PROTECTION - OVER VOLTAGE - UNDER VOLTAGE - TEMPERATURE SUPPLY SHORT-CIRCUIT I SET +V b BROKEN WIRE V P 1 kω R SET + V SET SET +V b 2.2 kω R FB FB + V FB INPUT STAGE ISET WINDOWS AND COMPARATORS OUTPUT STAGES V P I m OUT1 V m +M OUT2 I ref MECHANICAL TRANSMISSION MGE640 Fig.9 Best case application diagram Sep 04 11
12 handbook, full pagewidth +V b 43 V 47 µf 100 nf V P1 V P2 PROTECTION - OVER VOLTAGE - UNDER VOLTAGE - TEMPERATURE SUPPLY SHORT-CIRCUIT I SET +V b BROKEN WIRE V P 1 kω R SET + V SET SET 100 +V b nf 2.2 kω R FB FB + V FB INPUT STAGE ISET WINDOWS AND COMPARATORS OUTPUT STAGES V P I m OUT1 V m +M OUT2 100 nf I ref MECHANICAL TRANSMISSION MGE641 Fig.10 Worst case application diagram. Thermal aspects The dissipation of the device is the sum of two sources: the supply current (I P I m ) times the supply voltage (V P ) plus the motor current ( I m ) times the output saturation voltage (V P V m ). In formula: P = V P ( I P I m ) + I m ( V P V m ) It is assumed that the device must be capable of moving the motor from one end to the other in four equal steps and that the total time needed for this excursion is 16 seconds. After this excursion a pause is allowed before the same pulses are used to return to the original position. This operation is illustrated in Fig.11. (I P I m ) is approximately equal to I P(ss) when the motor is not running. It is obvious from the ratings that the combination of V P = 18 V, (I P I m ) = 80 ma, I m = 900 ma and (V P V m ) = 2.5 V can not be allowed at T amb = 105 C; see chapter Limiting values note 2. But it is also improbable that the motor is continuously driven, therefore the following assumptions have been made Sep 04 12
13 Stereo operation handbook, halfpage active motor inactive Table 1 Duration of the pauses T amb ( C) 8 s 4 s The duration of the pause depends on the ambient temperature, see Table 1. Fig.11 Thermal transient test. PAUSE (s) < to pause time (s) MGE642 The maximum allowable dissipated power P is then 0.77 W during the motor active periods in the event of a DIP8 package being used. Dissipation pulses due to starting and stopping the motor can be ignored because of their short duration. This maximum allowable dissipated power implies that the maximum continuous motor current ( I m ) is approximately 250 ma during the motor active periods when the supply voltage V P is 13 V. The maximum allowable dissipated power P is 0.67 W during the motor active periods in the event of a SO16 package being used. This implies that the maximum continuous motor current ( I m ) is approximately 220 ma during the motor active periods when the supply voltage (V P ) is 13 V. The default application will be when two modules are driven by one set potentiometer. One module controls the left head light, where the other one controls the right head light. Each module is connected by three wires: the battery line, the ground line and the set input wire. This can result in two additional fault conditions: from one module the battery line or the ground line can be broken, when the other module is still connected. Assume that the left one operates normally, where the right one has a fault. The setting potentiometer will have extra loading when the battery line is broken. This will result in a lower voltage at the wiper of the setting potentiometer. Thus the left module will start to regulate until a new equilibrium is reached. The amount of extra loading can be influenced by the external series resistor in the set input. These fault conditions and their implications should be considered when the total application is designed. Test diagram All parameters in chapter Characteristics until this section are measured at T amb = 25 C and are tested at each device using the test set-up of Fig.12. The only exceptions are parameters supply current (motor active) and output voltage (motor output) where the 1 kω output resistor is replaced by an appropriate current source Sep 04 13
14 handbook, full pagewidth V P1 V P V PROTECTION - OVER VOLTAGE - UNDER VOLTAGE - TEMPERATURE SUPPLY SHORT-CIRCUIT I SET + + R SET = 20 kω SET V SET R FB = 20 kω V FB FB INPUT STAGE I SET BROKEN WIRE WINDOWS AND COMPARATORS OUTPUT STAGES V P V P OUT1 OUT2 1 kω I ref MGE643 Fig.12 Test set-up (general) Sep 04 14
15 IMMUNITY TO NARROW BAND ELECTROMAGNETIC DISTURBANCES Test procedure GENERAL INFORMATION The immunity is measured using a test procedure, which is derived from the draft international standard ISO/DIS 11452, parts 1 and 7, submitted for circulation 1992 June 14. The test is carried out using a printed-circuit test board in a test set-up, which is illustrated in Fig.13. The circuit diagram of the test board is shown in Fig.14. The physical layout of the test board is shown in Figs 15 to 17. PREPARATION OF TEST The IC under test is mounted onto the printed-circuit test board. The printed-circuit test board is mounted into the faraday cage (RF-shielded 19 inch-rack) and connected to the test equipment as shown in Fig.13. One of three RF voltage injection points has to be chosen for injection, while the others have to be connected to passive terminations. The injection into the control loop via input RFC is shown in Fig.13. After the set-up is completed, the feedback voltage is selected by the appropriate setting of a jumper in the jumper field J1 (see Fig.14) and the battery voltage is switched on. With no RF voltage injected the correct operation of the system is verified by turning the SET potentiometer (see Fig.13) left and right (or vice-versa). The outputs OUT1 and OUT2 will switch to on-state (absolute differential voltage V diff = 3 to 5 V DC) in both turn directions. If the device under test functions correctly, the potentiometer is set to a position where the absolute voltage difference between the slider connection of the potentiometer and the jumper J1 is less than 5 mv. After adjustment, the absolute differential output voltage V diff has to be below 100 mv. Having reached this condition the immunity test may be started. TEST OF IMMUNITY For the test of immunity the RF voltage is injected into the test board and V diff is monitored for degradation. V diff is degraded if its actual value exceeds the maximum value described in Table 2. In the test routine the frequency is varied in steps from the start frequency to the stop frequency (see Table 2). Within each frequency step the level of injected RF voltage is incremented by steps to the maximum test level, which is specified in Table 2. Each step level is held constant for the dwell time. After the dwell time has elapsed, the degradation of the absolute output voltage is checked. If a degradation is detected it has to be verified, because the level setting may have an overshoot and the device under test may have a latching behaviour. The verification is achieved by switching off the power supply for 1 s after degradation is first detected. Then the supply is switched on and the degradation is rechecked. If the second check also indicates a degradation, then the values of RF level and frequency are inserted into a data file for reporting. If the second check is negative the level is further increased. If no degradation occurs until the specified maximum test level is reached, the maximum level is recorded together with the frequency of that step. RECOMMENDED RF-VOLTAGE SETTING PROCEDURE For a fast setting of the RF voltage to the required test level step it is recommended that the substitution method is used. This method sets the actual test level with respect to level values that have been filed in a pre-measurement. The RF source in the test set-up is built from a low-power RF generator and suitable amplifiers. In the recommended pre-measurement the RF voltage at the injection point is measured, while the signal generator outputs a constant voltage level (e.g. 100 mv). Thus, the gain factor from the output of the RF generator to the injection point can be easily calculated. In the pre-measurement the RF voltage at the injection point is measured for each frequency step. Dividing this measured voltage by 100 mv results in the gain factor for this frequency. All gain factors together with their frequency value are filed for use in the level setting of the immunity tests. In the immunity test routine, a required RF voltage test level at a frequency step is obtained by setting the RF signal generator to a level that is calculated by dividing the required RF voltage test level by the gain factor of that frequency. Test conditions The test is carried out using the test procedure as mentioned before and under the conditions mentioned in Table Sep 04 15
16 Table 2 General test conditions for immunity measurements SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT General T amb ambient temperature o C V bat battery voltage V V diff Notes 1. The typical value is 1 10 absolute differential output voltage (DC value) 2. For definition see ISO/DIS , annex B V f start start frequency 250 khz f stop stop frequency MHz f n frequency steps from 250 khz to 1 MHz 100 khz from 1 to 10 MHz; 9 steps (logarithmic): n = 0 to 8 note 1 MHz from 10 to 200 MHz 2 MHz from 200 to 1000 MHz 20 MHz V IL(rms) immunity voltage level (RMS value) from 250 khz to 1 MHz 5 V from 1 MHz to 5 MHz 10 V from 5 MHz to 1 GHz 15 V V TL(max) maximum test voltage level 24 V V START(rms) voltage start level (RMS value) V V STEP(rms) voltage level step (RMS value) 2 V Q TL relative accuracy of test level % t dwell dwell time 2 s RF-voltage characteristic; note 2 f M(AM) AM modulation frequency constant peak level 1 khz m D modulation depth constant peak level 0 % n Sep 04 16
17 handbook, full pagewidth FARADAY CAGE LIGHT POSITION CONTROL IMMUNITY TEST BOARD CONTROL RFC OUT1 OUT2 RFG GND +13 V RFS 100 Ω 620 Ω 100 Ω 100 Ω 50 nf SET 1 kω 50 Ω RF 50 nf 50 V diff nf + V digital 50 Ω 50 nf V bat 50 nf 50 Ω MGE853 RF digital V RF TEST CONTROL AND DATA AQUISITION RFC is the RF voltage injection point to control path. RFG is the RF voltage injection point to ground. RFS is the RF voltage injection point to battery voltage (+13 V). For all decoupling filters Z >> 150 Ω. Fig.13 Test set-up for immunity test Sep 04 17
18 handbook, full pagewidth +13 V C2 47 nf RFS CONTROL RFC C3 47 nf V bat R7 1.2 kω R6 820 Ω R5 820 Ω R4 1.2 kω J1 1 R1 15 kω R2 20 kω SET FB D1 1N4005 C1 100 nf SET FB V P1 V P IC1 T GND OUT1 OUT2 11 D2 BZT03/C43 C5 1.0 nf OUT2 R8 510 Ω OUT1 C6 47 µf (50 V) R9 510 Ω GND RFG C4 47 nf OUT2 OUT1 MGE852 Feedback voltage setting J1: amount of voltage difference between J1 and SET input adjusted by potentiometer setting to <50 mv (see also Fig.13). Fig.14 Circuit diagram of the test board. Figs 15 to 17 show the layout of the immunity test board used for the evaluation Sep 04 18
19 handbook, full pagewidth D1 C6 R7 R6 D2 C1 IC1 C5 R5 70% J1 50 R2 R1 C3 R9 R8 C4 RFG 30 C2 R4 GND +13 V RFS CONTROL RFC OUT1 OUT2 MGE854 Fig.15 Component placement of the printed-circuit board. handbook, full pagewidth MGE855 Fig.16 Top view of printed-circuit board Sep 04 19
20 handbook, full pagewidth MGE856 Fig.17 Bottom view of printed-circuit board. Test results 30 handbook, full pagewidth MGE858 V RF(rms) (V) 20 (1) (2) device accepted device not accepted 10 (3) (4) frequency (MHz) 10 3 (1) Feedback voltage is 30%. (2) Feedback voltage is 50%. (3) Feedback voltage is 70%. (4) Immunity level. Fig.18 Typical immunity results with respect to setting of jumper 1 (30, 50 and 70%) RF input to RFC Sep 04 20
21 30 handbook, full pagewidth MGE857 V RF(rms) (V) (1) 20 device accepted (2) device not accepted 10 (3) frequency (MHz) 10 3 (1) RF voltage injection point to ground and to battery voltage. (2) RF voltage injection point to control path. (3) Immunity level. Fig.19 Typical immunity results with respect to RF injection points, with jumper 1 set to 50%. The typical immunity results of the T are shown in Fig.18. The RF voltage was injected into the control line (see also Figs 13 and 14). This injection point is the most sensitive one that could be found. This is underlined by the comparison results shown in Fig Sep 04 21
22 PACKAGE OUTLINES DIP8: plastic dual in-line package; 8 leads (300 mil) SOT97-1 D M E seating plane A 2 A L A 1 Z e b 1 w M c (e ) 1 8 b 5 b 2 M H pin 1 index E mm scale DIMENSIONS (inch dimensions are derived from the original mm dimensions) UNIT mm inches Note A max. A 1 A 2 (1) (1) (1) b 1 b 2 c D E e L M Z min. max. b e 1 M E H w max Plastic or metal protrusions of 0.25 mm maximum per side are not included OUTLINE VERSION REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE SOT G01 MO-001AN Sep 04 22
23 SO16: plastic small outline package; 16 leads; body width 3.9 mm SOT109-1 D E A X c y H E v M A Z 16 9 Q A 2 A 1 (A ) 3 A pin 1 index θ L p 1 8 L e b p w M detail X mm scale DIMENSIONS (inch dimensions are derived from the original mm dimensions) UNIT mm inches Note A max A 1 A 2 A 3 b p c D (1) E (1) e H (1) E L L p Q v w y Z Plastic or metal protrusions of 0.15 mm maximum per side are not included θ o 8 o OUTLINE VERSION REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE SOT E07S MS-012AC Sep 04 23
24 SOLDERING Introduction There is no soldering method that is ideal for all IC packages. Wave soldering is often preferred when through-hole and surface mounted components are mixed on one printed-circuit board. However, wave soldering is not always suitable for surface mounted ICs, or for printed-circuits with high population densities. In these situations reflow soldering is often used. This text gives a very brief insight to a complex technology. A more in-depth account of soldering ICs can be found in our IC Package Databook (order code ). DIP SOLDERING BY DIPPING OR BY WAVE The maximum permissible temperature of the solder is 260 C; solder at this temperature must not be in contact with the joint for more than 5 seconds. The total contact time of successive solder waves must not exceed 5 seconds. The device may be mounted up to the seating plane, but the temperature of the plastic body must not exceed the specified maximum storage temperature (T stg max ). If the printed-circuit board has been pre-heated, forced cooling may be necessary immediately after soldering to keep the temperature within the permissible limit. REPAIRING SOLDERED JOINTS Apply a low voltage soldering iron (less than 24 V) to the lead(s) of the package, below the seating plane or not more than 2 mm above it. If the temperature of the soldering iron bit is less than 300 C it may remain in contact for up to 10 seconds. If the bit temperature is between 300 and 400 C, contact may be up to 5 seconds. SO REFLOW SOLDERING Reflow soldering techniques are suitable for all SO packages. Reflow soldering requires solder paste (a suspension of fine solder particles, flux and binding agent) to be applied to the printed-circuit board by screen printing, stencilling or pressure-syringe dispensing before package placement. Several techniques exist for reflowing; for example, thermal conduction by heated belt. Dwell times vary between 50 and 300 seconds depending on heating method. Typical reflow temperatures range from 215 to 250 C. Preheating is necessary to dry the paste and evaporate the binding agent. Preheating duration: 45 minutes at 45 C. WAVE SOLDERING Wave soldering techniques can be used for all SO packages if the following conditions are observed: A double-wave (a turbulent wave with high upward pressure followed by a smooth laminar wave) soldering technique should be used. The longitudinal axis of the package footprint must be parallel to the solder flow. The package footprint must incorporate solder thieves at the downstream end. During placement and before soldering, the package must be fixed with a droplet of adhesive. The adhesive can be applied by screen printing, pin transfer or syringe dispensing. The package can be soldered after the adhesive is cured. Maximum permissible solder temperature is 260 C, and maximum duration of package immersion in solder is 10 seconds, if cooled to less than 150 C within 6 seconds. Typical dwell time is 4 seconds at 250 C. A mildly-activated flux will eliminate the need for removal of corrosive residues in most applications. REPAIRING SOLDERED JOINTS Fix the component by first soldering two diagonallyopposite end leads. Use only a low voltage soldering iron (less than 24 V) applied to the flat part of the lead. Contact time must be limited to 10 seconds at up to 300 C. When using a dedicated tool, all other leads can be soldered in one operation within 2 to 5 seconds between 270 and 320 C Sep 04 24
25 DEFINITIONS Data sheet status Objective specification Preliminary specification Limiting values This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale Sep 04 25
26 NOTES 1996 Sep 04 26
27 NOTES 1996 Sep 04 27
28 a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel , Fax Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel , Fax Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6, MINSK, Tel , Fax Belgium: see The Netherlands Brazil: see South America Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor, 51 James Bourchier Blvd., 1407 SOFIA, Tel , Fax Canada: PHILIPS SEMICONDUCTORS/COMPONENTS, Tel China/Hong Kong: 501 Hong Kong Industrial Technology Centre, 72 Tat Chee Avenue, Kowloon Tong, HONG KONG, Tel , Fax Colombia: see South America Czech Republic: see Austria Denmark: Prags Boulevard 80, PB 1919, DK-2300 COPENHAGEN S, Tel , Fax Finland: Sinikalliontie 3, FIN ESPOO, Tel , Fax France: 4 Rue du Port-aux-Vins, BP317, SURESNES Cedex, Tel , Fax Germany: Hammerbrookstraße 69, D HAMBURG, Tel , Fax Greece: No. 15, 25th March Street, GR TAVROS, Tel /911, Fax Hungary: see Austria India: Philips INDIA Ltd, Shivsagar Estate, A Block, Dr. Annie Besant Rd. Worli, MUMBAI , Tel , Fax Indonesia: see Singapore Ireland: Newstead, Clonskeagh, DUBLIN 14, Tel , Fax Israel: RAPAC Electronics, 7 Kehilat Saloniki St, TEL AVIV 61180, Tel , Fax Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3, MILANO, Tel , Fax Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108, Tel , Fax Korea: Philips House, Itaewon-dong, Yongsan-ku, SEOUL, Tel , Fax Malaysia: No. 76 Jalan Universiti, PETALING JAYA, SELANGOR, Tel , Fax Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905, Tel Middle East: see Italy Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB, Tel , Fax New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND, Tel , Fax Norway: Box 1, Manglerud 0612, OSLO, Tel , Fax Philippines: Philips Semiconductors Philippines Inc., 106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI, Metro MANILA, Tel , Fax Poland: Ul. Lukiska 10, PL WARSZAWA, Tel , Fax Portugal: see Spain Romania: see Italy Russia: Philips Russia, Ul. Usatcheva 35A, MOSCOW, Tel , Fax Singapore: Lorong 1, Toa Payoh, SINGAPORE 1231, Tel , Fax Slovakia: see Austria Slovenia: see Italy South Africa: S.A. PHILIPS Pty Ltd., Main Road Martindale, 2092 JOHANNESBURG, P.O. Box 7430 Johannesburg 2000, Tel , Fax South America: Rua do Rocio 220, 5th floor, Suite 51, São Paulo, SÃO PAULO - SP, Brazil, Tel , Fax Spain: Balmes 22, BARCELONA, Tel , Fax Sweden: Kottbygatan 7, Akalla, S STOCKHOLM, Tel , Fax Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH, Tel , Fax Taiwan: PHILIPS TAIWAN Ltd., 23-30F, 66, Chung Hsiao West Road, Sec. 1, P.O. Box 22978, TAIPEI 100, Tel , Fax Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd., 209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260, Tel , Fax Turkey: Talatpasa Cad. No. 5, GÜLTEPE/ISTANBUL, Tel , Fax Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7, KIEV, Tel , Fax United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes, MIDDLESEX UB3 5BX, Tel , Fax United States: 811 East Arques Avenue, SUNNYVALE, CA , Tel Uruguay: see South America Vietnam: see Singapore Yugoslavia: PHILIPS, Trg N. Pasica 5/v, BEOGRAD, Tel , Fax For all other countries apply to: Philips Semiconductors, Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax Internet: Philips Electronics N.V SCA51 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands /1200/01/pp28 Date of release: 1996 Sep 04 Document order number:
DATA SHEET. BC160; BC161 PNP medium power transistors DISCRETE SEMICONDUCTORS. 1997 May 12
DISCRETE SEMICONDUCTORS DATA SHEET M3D110 Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 May 12 FEATURES High current (max. 1 A) Low voltage (max. 60 V). APPLICATIONS General
DATA SHEET. BD136; BD138; BD140 PNP power transistors DISCRETE SEMICONDUCTORS. 1997 Mar 26
DISCRETE SEMICONDUCTORS DATA SHEET ok, halfpage M3D100 Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Mar 26 FEATURES High current (max. 1.5 A) Low voltage (max. 80 V).
DATA SHEET. BF494; BF495 NPN medium frequency transistors DISCRETE SEMICONDUCTORS. 1997 Jul 08
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Jul 08 FEATURES PINNING Low current (max. 30 ma) Low voltage (max.
DATA SHEET. BC546; BC547; BC548 NPN general purpose transistors DISCRETE SEMICONDUCTORS. 1997 Mar 04
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Mar 04 FEATURES Low current (max. 100 ma) Low voltage (max. 65 V).
DATA SHEET. BC327; BC327A; BC328 PNP general purpose transistors DISCRETE SEMICONDUCTORS. 1997 Mar 10
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Mar 10 BC327; BC327A; BC328 FEATURES High current (max. 500 ma)
DATA SHEET. 2N2219; 2N2219A NPN switching transistors DISCRETE SEMICONDUCTORS. 1997 Sep 03
DISCRETE SEMICONDUCTORS DATA SHEET M3D111 Supersedes data of 1997 May 07 File under Discrete Semiconductors, SC04 1997 Sep 03 FEATURES High current (max. 800 ma) Low voltage (max. 40 V). APPLICATIONS High-speed
DATA SHEET. KMZ10C Magnetic field sensor DISCRETE SEMICONDUCTORS. 1998 Mar 24
DISCRETE SEMICONDUCTORS DATA SHEET M3D329 Supersedes data of November 1994 File under Discrete Semiconductors, SC17 1998 Mar 24 DESCRIPTION The is a magnetic field sensor, employing the magnetoresistive
DATA SHEET. BSP50; BSP51; BSP52 NPN Darlington transistors DISCRETE SEMICONDUCTORS. 1999 Apr 23. Product specification Supersedes data of 1997 Apr 22
DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D087 Supersedes data of 1997 Apr 22 1999 Apr 23 FEATURES PINNING High current (max. 1 A) Low voltage (max. 80 V) Integrated diode and resistor. APPLICATIONS
DATA SHEET. 2N2222; 2N2222A NPN switching transistors DISCRETE SEMICONDUCTORS. 1997 May 29
DISCRETE SEMICONDUCTORS DATA SHEET M3D125 Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 May 29 FEATURES High current (max. 800 ma) Low voltage (max. 40 V). APPLICATIONS
DATA SHEET. KMZ51 Magnetic field sensor DISCRETE SEMICONDUCTORS. 1998 Mar 24
DISCRETE SEMICONDUCTORS DATA SHEET M3D315 Supersedes data of 1996 Nov 15 File under Discrete Semiconductors, SC17 1998 Mar 24 FEATURES High sensitivity Integrated compensation coil Integrated set/reset
DATA SHEET. BS250 P-channel enhancement mode vertical D-MOS transistor DISCRETE SEMICONDUCTORS
DISCRETE SEMICONDUCTORS DATA SHEET P-channel enhancement mode vertical File under Discrete Semiconductors, SC13b April 1995 DESCRIPTION P-channel enhancement mode vertical in TO-92 variant envelope and
DATA SHEET. BF869; BF871 NPN high-voltage transistors DISCRETE SEMICONDUCTORS. 1999 Apr 12. Product specification Supersedes data of 1996 Dec 09
DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D067 Supersedes data of 1996 Dec 09 1999 Apr 12 FEATURES Low feedback capacitance. handbook, halfpage APPLICATIONS For use in class-b video output
Demoboard for the BGA2001 (900 and 1800 MHz)
APPLICATION INFORMATION SUMMARY Description of products BGA2001: RF transistor with internal bias circuit. Benefit is lower component count, internal compensation for temperature and current gain spread.
DATA SHEET. BC546; BC547 NPN general purpose transistors DISCRETE SEMICONDUCTORS. 1999 Apr 15. Product specification Supersedes data of 1997 Mar 04
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 Supersedes data of 1997 Mar 04 1999 Apr 15 FEATURES Low current (max. 100 ma) Low voltage (max. 65 V). APPLICATIONS General purpose switching and
DATA SHEET. BAV99 High-speed double diode DISCRETE SEMICONDUCTORS. 1999 May 11. Product specification Supersedes data of 1996 Sep 17.
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 Supersedes data of 1996 Sep 17 1999 May 11 FEATURES Small plastic SMD package High switching speed: max. 4 ns Continuous reverse voltage: max. 75
DISCRETE SEMICONDUCTORS DATA SHEET M3D176. 1N4148; 1N4448 High-speed diodes. 1999 May 25. Product specification Supersedes data of 1996 Sep 03
DISCRETE SEMICONDUCTORS DATA SHEET M3D176 Supersedes data of 1996 Sep 03 1999 May 25 FEATURES Hermetically sealed leaded glass SOD27 (DO-35) package High switching speed: max. 4 ns General application
Design of H.F. Wideband Power Transformers; Part II
APPLICATION NOTE Design of H.F. Wideband Power Transformers; Part II CONTENTS 1 SUMMARY 2 INTRODUCTION 3 L.F. LIMITATIONS OF CONVENTIONAL TRANSFORMERS 4 H.F. LIMITATION OF CONVENTIONAL TRANSFORMERS 5 H.F.
DATA SHEET. TDA1575T FM front end circuit for CENELEC EN 55020 applications INTEGRATED CIRCUITS
INTEGRATED CIRCUITS DATA SHEET Supersedes data of October 1990 File under Integrated Circuits, IC01 April 1993 FEATURES Bipolar integrated FM front end circuit, designed for use in car radios and home
DISCRETE SEMICONDUCTORS DATA SHEET
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 Supersedes data of 1997 May 05 1999 May 21 FEATURES High current (max. 600 ma) Low voltage (max. 40 V). APPLICATIONS General purpose switching and
INTEGRATED CIRCUITS. For a complete data sheet, please also download:
INTEGRATED CIRCUITS DATA SHEET For a complete data sheet, please also download: The IC06 74HC/HCT/HCU/HCMOS Logic Family Specifications The IC06 74HC/HCT/HCU/HCMOS Logic Package Information The IC06 74HC/HCT/HCU/HCMOS
BSN20. 1. Description. 2. Features. 3. Applications. 4. Pinning information. N-channel enhancement mode field-effect transistor
Rev. 3 26 June 2 Product specification. Description in a plastic package using TrenchMOS technology. Product availability: in SOT23. 2. Features TrenchMOS technology Very fast switching Logic level compatible
DATA SHEET. BC817 NPN transistor à usage général DISCRETE SEMICONDUCTORS. 1999 Jun 01. Product specification Supersedes data of 1997 Mar 12
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 NPN transistor à usage général Supersedes data of 1997 Mar 12 1999 Jun 01 Caractéristiques Fort courant (max. 500 ma) Faible tension (max. 45 V).
INTEGRATED CIRCUITS DATA SHEET. SAA1064 4-digit LED-driver with I 2 C-Bus interface. Product specification File under Integrated Circuits, IC01
INTEGRATED CIRCUITS DATA SHEET 4-digit LED-driver with I 2 C-Bus interface File under Integrated Circuits, IC01 February 1991 GENERAL DESCRIPTION The LED-driver is a bipolar integrated circuit made in
Kit 27. 1W TDA7052 POWER AMPLIFIER
Kit 27. 1W TDA7052 POWER AMPLIFIER This is a 1 watt mono amplifier Kit module using the TDA7052 from Philips. (Note, no suffix.) It is designed to be used as a building block in other projects where a
INTEGRATED CIRCUITS DATA SHEET. TDA7000 FM radio circuit. Product specification File under Integrated Circuits, IC01
INTEGRATED CIRCUITS DATA SHEET File under Integrated Circuits, IC01 May 1992 GENERAL DESCRIPTION The is a monolithic integrated circuit for mono FM portable radios, where a minimum on peripheral components
INTEGRATED CIRCUITS DATA SHEET. TDA7052 1 W BTL mono audio amplifier. Product specification File under Integrated Circuits, IC01
INTEGRATED CIRCUITS DATA SHEET TDA7052 1 W BTL mono audio amplifier File under Integrated Circuits, IC01 July 1994 GENERAL DESCRIPTION The TDA7052 is a mono output amplifier in a 8-lead dual-in-line (DIL)
DATA SHEET. TDA8560Q 2 40 W/2 Ω stereo BTL car radio power amplifier with diagnostic facility INTEGRATED CIRCUITS. 1996 Jan 08
INTEGRATED CIRCUITS DATA SHEET power amplifier with diagnostic facility Supersedes data of March 1994 File under Integrated Circuits, IC01 1996 Jan 08 FEATURES Requires very few external components High
How To Control A Power Supply On A Powerline With A.F.F Amplifier
INTEGRATED CIRCUITS DATA SHEET Sound I.F. amplifier/demodulator for TV File under Integrated Circuits, IC02 March 1986 GENERAL DESCRIPTION The is an i.f. amplifier with a symmetrical FM demodulator and
DATA SHEET. TDA8561Q 2 24 W BTL or 4 12 W single-ended car radio power amplifier INTEGRATED CIRCUITS. 1999 Jun 30
INTEGRATED CIRCUITS DATA SHEET 2 24 W BTL or 4 2 W single-ended car radio power amplifier Supersedes data of 997 Sep 22 File under Integrated Circuits, IC0 999 Jun 30 FEATURES Requires very few external
DATA SHEET. TDA1543 Dual 16-bit DAC (economy version) (I 2 S input format) INTEGRATED CIRCUITS
INTEGRATED CIRCUITS DATA SHEET File under Integrated Circuits, IC01 February 1991 FEATURES Low distortion 16-bit dynamic range 4 oversampling possible Single 5 V power supply No external components required
DATA SHEET. TDA1510AQ 24 W BTL or 2 x 12 W stereo car radio power amplifier INTEGRATED CIRCUITS
INTEGRATED CIRCUITS DATA SHEET 24 W BTL or 2 x 12 W stereo car radio File under Integrated Circuits, IC01 January 1992 GENERAL DESCRIPTION The is a class-b integrated output amplifier encapsulated in a
DATA SHEET. TDA8351 DC-coupled vertical deflection circuit INTEGRATED CIRCUITS
INTEGRATED CIRCUITS DATA SHEET DC-coupled vertical deflection circuit Supersedes data of January 1995 File under Integrated Circuits, IC02 1999 Sep 27 FEATURES Few external components Highly efficient
DATA SHEET. TDA1518BQ 24 W BTL or 2 x 12 watt stereo car radio power amplifier INTEGRATED CIRCUITS
INTEGRATED CIRCUITS DATA SHEET File under Integrated Circuits, IC01 July 1994 GENERAL DESCRIPTION The is an integrated class-b output amplifier in a 13-lead single-in-line (SIL) plastic power package.
DATA SHEET. TDA8356 DC-coupled vertical deflection circuit INTEGRATED CIRCUITS
INTEGRATED CIRCUITS DATA SHEET DC-coupled vertical deflection circuit Supersedes data of 1998 Sep 07 File under Integrated Circuits, IC02 1999 Sep 27 FEATURES Few external components Highly efficient fully
DATA SHEET. PBR951 UHF wideband transistor DISCRETE SEMICONDUCTORS. 1998 Aug 10
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D88 Supersedes data of 998 Jun 9 File under Discrete Semiconductors, SC4 998 Aug FEATURES PINNING - SOT3 Small size Low noise Low distortion High gain
INTEGRATED CIRCUITS. For a complete data sheet, please also download:
INTEGRTED CIRCUITS DT SEET For a complete data sheet, please also download: The IC06 74C/CT/CU/CMOS ogic Family Specifications The IC06 74C/CT/CU/CMOS ogic Package Information The IC06 74C/CT/CU/CMOS ogic
DATA SHEET. TDA1562Q 70 W high efficiency power amplifier with diagnostic facility INTEGRATED CIRCUITS. 1998 Apr 07
INTEGRATED CIRCUITS DATA SHEET 70 W high efficiency power amplifier File under Integrated Circuits, IC01 1998 Apr 07 FEATURES Very high output power, operating from a single low supply voltage Low power
DATA SHEET. TDA8703 8-bit high-speed analog-to-digital converter INTEGRATED CIRCUITS. 1996 Aug 26
INTEGRATED CIRCUITS DATA SHEET 8-bit high-speed analog-to-digital converter Supersedes data of April 1993 File under Integrated Circuits, IC02 1996 Aug 26 8-bit high-speed analog-to-digital converter FEATURES
DATA SHEET. BST50; BST51; BST52 NPN Darlington transistors DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2001 Feb 20.
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 Supersedes data of 2001 Feb 20 2004 Dec 09 FEATURES High current (max. 0.5 A) Low voltage (max. 80 V) Integrated diode and resistor. APPLICATIONS
DATA SHEET. BC875; BC879 NPN Darlington transistors DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1999 May 28.
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 Supersedes data of 1999 May 28 2004 Nov 05 FEATURES High DC current gain (min. 1000) High current (max. 1 A) Low voltage (max. 80 V) Integrated
DATA SHEET. MMBT3904 NPN switching transistor DISCRETE SEMICONDUCTORS. Product data sheet Supersedes data of 2002 Oct 04. 2004 Feb 03.
DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D088 Supersedes data of 2002 Oct 04 2004 Feb 03 FEATURES Collector current capability I C = 200 ma Collector-emitter voltage V CEO = 40 V. APPLICATIONS
DISCRETE SEMICONDUCTORS DATA SHEET
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 Supersedes data of 1999 Apr 23 2001 Oct 10 FEATURES High current (max. 1 A) Low voltage (max. 80 V). APPLICATIONS Audio and video amplifiers. PINNING
CAN bus ESD protection diode
Rev. 04 15 February 2008 Product data sheet 1. Product profile 1.1 General description in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package designed to protect two automotive Controller
ETP01-xx21. Protection for Ethernet lines. Features. Description. Applications. Benefits. Complies with the following standards
ETP0-xx2 Protection for Ethernet lines Features Differential and common mode protection Telcordia GR089 Intrabuilding: 50 A, 2/0 µs ITU-T K20/2: 40 A, 5/30 µs Low capacitance: 3 pf max at 0 V UL94 V0 approved
TDA2003 10W CAR RADIO AUDIO AMPLIFIER
TDA2003 10W CAR RADIO AUDIO AMPLIFIER DESCRIPTION The TDA 2003 has improved performance with the same pin configuration as the TDA 2002. The additional features of TDA 2002, very low number of external
ESDLIN1524BJ. Transil, transient voltage surge suppressor diode for ESD protection. Features. Description SOD323
Transil, transient voltage surge suppressor diode for ESD protection Datasheet production data Features Max peak pulse power 160 W (8/0 µs) Asymmetrical bidirectional device Stand-off voltage: 15 and 4
TDA2822 DUAL POWER AMPLIFIER SUPPLY VOLTAGE DOWN TO 3 V LOW CROSSOVER DISTORSION LOW QUIESCENT CURRENT BRIDGE OR STEREO CONFIGURATION
TDA2822 DUAL POER AMPLIFIER SUPPLY VOLTAGE DON TO 3 V. LO CROSSOVER DISTORSION LO QUIESCENT CURRENT BRIDGE OR STEREO CONFIGURATION DESCRIPTION The TDA2822 is a monolithic integrated circuit in 12+2+2 powerdip,
N-channel enhancement mode TrenchMOS transistor
FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d V DSS = V Low on-state resistance Fast switching I D = A High thermal cycling performance Low thermal resistance R DS(ON) mω (V GS = V) g s R DS(ON)
DATA SHEET. PBSS5540Z 40 V low V CEsat PNP transistor DISCRETE SEMICONDUCTORS. Product data sheet Supersedes data of 2001 Jan 26. 2001 Sep 21.
DISCRETE SEMICONDUCTORS DATA SHEET fpage M3D87 PBSS554Z 4 V low V CEsat PNP transistor Supersedes data of 21 Jan 26 21 Sep 21 FEATURES Low collector-emitter saturation voltage High current capability Improved
Wideband 300 W push-pull FM amplifier using BLV25 transistors
APPLICATION NOTE Wideband 300 W push-pull FM amplifier using BLV25 transistors CONTENTS 1 INTRODUCTION 2 AMPLIFIER DESIGN THEORY 2.1 The output network 2.2 The input network 2.3 Bias components 3 PRACTICAL
DATA SHEET. PCA82C251 CAN transceiver for 24 V systems INTEGRATED CIRCUITS
INTEGRATED CIRCUITS DATA SHEET Supersedes data of 1997 Mar 14 File under Integrated Circuits, IC18 2000 Jan 13 FEATURES Fully compatible with the ISO 11898-24 V standard Slope control to reduce RFI Thermally
A linear amplifier (1.6 28 MHz) for 8 W PEP in class-a with the BLF175
APPLICATION NOTE A linear amplifier (1.6 28 MHz) for 8 W CONTENTS 1 SUMMARY 2 INTRODUCTION 3 GENERAL CONSIDERATIONS 4 DESIGN OF THE AMPLIFIER 4.1 Circuit description 4.2 Design procedure 4.2.1 Powergain
4-bit binary full adder with fast carry CIN + (A1 + B1) + 2(A2 + B2) + 4(A3 + B3) + 8(A4 + B4) = = S1 + 2S2 + 4S3 + 8S4 + 16COUT
Rev. 03 11 November 2004 Product data sheet 1. General description 2. Features The is a high-speed Si-gate CMOS device and is pin compatible with low power Schottky TTL (LSTTL). The is specified in compliance
LM337. Three-terminal adjustable negative voltage regulators. Features. Description
Three-terminal adjustable negative voltage regulators Datasheet - production data current limit, thermal overload protection and safe area protection. All overload protection circuitry remains fully functional
DISCRETE SEMICONDUCTORS DATA SHEET
DISCRETE SEMICONDUCTORS DATA SHEET ndbook, halfpage M3D49 Schottky barrier rectifiers 23 Aug 2 FEATURES Very low forward voltage High surge current Very small plastic SMD package. APPLICATIONS Low voltage
D-PAK version of BUK117-50DL
D-PK version of BUK117-50DL DESCRIPTION QUICK REFERENCE DT Monolithic temperature and SYMBOL PRMETER MX. UNIT overload protected logic level power MOSFET in TOPFET2 technology V DS Continuous drain source
DISCRETE SEMICONDUCTORS DATA SHEET BC856; BC857; BC858
DISCRETE SEMICONDUCTORS DATA SHEET Supersedes data of 23 Apr 9 24 Jan 16 FEATURES Low current (max. 1 ma) Low voltage (max. 65 V). APPLICATIONS General purpose switching and amplification. PINNING PIN
INTEGRATED CIRCUITS. NE558 Quad timer. Product data Supersedes data of 2001 Aug 03. 2003 Feb 14
INTEGRATED CIRCUITS Supersedes data of 2001 Aug 03 2003 Feb 14 DESCRIPTION The Quad Timers are monolithic timing devices which can be used to produce four independent timing functions. The output sinks
SMD version of BUK118-50DL
DESCRIPTION QUICK REFERENCE DT Monolithic temperature and SYMBOL PRMETER MX. UNIT overload protected logic level power MOSFET in TOPFET2 technology V DS Continuous drain source voltage 50 V assembled in
PESDxU1UT series. 1. Product profile. Ultra low capacitance ESD protection diode in SOT23 package. 1.1 General description. 1.
Rev. 02 20 August 2009 Product data sheet 1. Product profile 1.1 General description Ultra low capacitance ElectroStatic Discharge (ESD) protection diode in a SOT23 (TO-236AB) small SMD plastic package
Table 1. Absolute maximum ratings (T amb = 25 C) Symbol Parameter Value Unit. ISO 10605 - C = 330 pf, R = 330 Ω : Contact discharge Air discharge
Automotive dual-line Transil, transient voltage suppressor (TVS) for CAN bus Datasheet - production data Complies with the following standards ISO 10605 - C = 150 pf, R = 330 Ω : 30 kv (air discharge)
How To Make An Electric Static Discharge (Esd) Protection Diode
Rev. 01 0 October 2008 Product data sheet 1. Product profile 1.1 General description Ultra low capacitance bidirectional ElectroStatic Discharge (ESD) protection diodes in small Surface-Mounted Device
.OPERATING SUPPLY VOLTAGE UP TO 46 V
L298 DUAL FULL-BRIDGE DRIVER.OPERATING SUPPLY VOLTAGE UP TO 46 V TOTAL DC CURRENT UP TO 4 A. LOW SATURATION VOLTAGE OVERTEMPERATURE PROTECTION LOGICAL "0" INPUT VOLTAGE UP TO 1.5 V (HIGH NOISE IMMUNITY)
10 ma LED driver in SOT457
SOT457 in SOT457 Rev. 1 20 February 2014 Product data sheet 1. Product profile 1.1 General description LED driver consisting of resistor-equipped PNP transistor with two diodes on one chip in an SOT457
BZW50. Transil, transient voltage surge suppressor (TVS) Features. Description
Transil, transient voltage surge suppressor (TVS) Datasheet production data Features Peak pulse power: 5000 W (10/0 µs) Stand-off voltage range from 10 V to 180 V Unidirectional and bidirectional types
TDA2004R. 10 + 10 W stereo amplifier for car radio. Features. Description
10 + 10 W stereo amplifier for car radio Features Low distortion Low noise Protection against: Output AC short circuit to ground Overrating chip temperature Load dump voltage surge Fortuitous open ground
DATA SHEET. BF245A; BF245B; BF245C N-channel silicon field-effect transistors DISCRETE SEMICONDUCTORS
DISCRETE SEMICONDUCTORS DATA SHEET N-channel silicon field-effect transistors Supersedes data of April 995 996 Jul BF5A; BF5B; BF5C FEATURES Interchangeability of drain and source connections Frequencies
DATA SHEET. PMEGXX10BEA; PMEGXX10BEV 1 A very low V F MEGA Schottky barrier rectifier DISCRETE SEMICONDUCTORS
DISCRETE SEMICONDUCTORS DATA SHEET Supersedes data of 24 Apr 2 24 Jun 4 FEATURES Forward current: A Reverse voltages: 2 V, 3 V, 4 V Very low forward voltage Ultra small and very small plastic SMD package
SWITCH-MODE POWER SUPPLY CONTROLLER PULSE OUTPUT DC OUTPUT GROUND EXTERNAL FUNCTION SIMULATION ZERO CROSSING INPUT CONTROL EXTERNAL FUNCTION
SWITCH-MODE POWER SUPPLY CONTROLLER. LOW START-UP CURRENT. DIRECT CONTROL OF SWITCHING TRAN- SISTOR. COLLECTOR CURRENT PROPORTIONAL TO BASE-CURRENT INPUT REERSE-GOING LINEAR OERLOAD CHARACTERISTIC CURE
IP4234CZ6. 1. Product profile. Single USB 2.0 ESD protection to IEC 61000-4-2 level 4. 1.1 General description. 1.2 Features. 1.
Rev. 01 16 April 2009 Product data sheet 1. Product profile 1.1 General description The is designed to protect Input/Output (I/O) USB 2.0 ports, that are sensitive to capacitive loads, from being damaged
INTEGRATED CIRCUITS. 74LVC08A Quad 2-input AND gate. Product specification IC24 Data Handbook. 1997 Jun 30
INTEGRATED CIRCUITS IC24 Data Handbook 1997 Jun 30 FEATURES Wide supply voltage range of 1.2 V to 3.6 V In accordance with JEDEC standard no. 8-1A Inputs accept voltages up to 5.5 V CMOS low power consumption
TDA4605 CONTROL CIRCUIT FOR SWITCH MODE POWER SUPPLIES USING MOS TRANSISTORS
CONTROL CIRCUIT FOR SWITCH MODE POWER SUPPLIES USING MOS TRANSISTORS Fold-Back Characteristic provides Overload Protection for External Diodes Burst Operation under Short-Circuit and no Load Conditions
logic level for RCD/ GFI/ LCCB applications
logic level for RCD/ GFI/ LCCB applications BT68W series GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated, sensitive gate SYMBOL PARAMETER MAX. MAX. MAX. MAX. UNIT thyristors in a plastic envelope
logic level for RCD/ GFI applications
logic level for RCD/ GFI applications BT68 series GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated, sensitive gate SYMBOL PARAMETER MAX. MAX. MAX. MAX. UNIT thyristors in a plastic envelope, intended
UA741. General-purpose single operational amplifier. Features. Applications. Description. N DIP8 (plastic package)
General-purpose single operational amplifier Datasheet - production data N DIP8 (plastic package) D SO8 (plastic micropackage) Pin connections (top view) 1 - Offset null 1 2 - Inverting input 3 - Non-inverting
Diode, Schottky SMB/DO-214AA. Page <1> 24/04/08 V1.1. Dimensions Inches (Millimeters)
Features: For surface mounted application. Metal to silicon rectifier, majority carrier conduction. Low forward voltage drop. Easy pick and place. High surge current capability. Plastic material. Epitaxial
STCS1A. 1.5 A max constant current LED driver. Features. Applications. Description
1.5 A max constant current LED driver Features Up to 40 V input voltage Less than 0.5 V voltage overhead Up to 1.5 A output current PWM dimming pin Shutdown pin LED disconnection diagnostic DFN8 (3 x 3
45 V, 100 ma NPN/PNP general-purpose transistor
Rev. 4 18 February 29 Product data sheet 1. Product profile 1.1 General description NPN/PNP general-purpose transistor pair in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package.
DATA SHEET. PCX8582X-2 Family 256 x 8-bit CMOS EEPROMS with I 2 C-bus interface. Philips Semiconductors INTEGRATED CIRCUITS.
INTEGRATED CIRCUITS DATA SHEET Supersedes data of February 1992 File under Integrated Circuits, IC12 December 1994 Philips Semiconductors FEATURES Low power CMOS maximum active current 2.0 ma maximum standby
DDSL01. Secondary protection for DSL lines. Features. Description
Secondary protection for DSL lines Features Stand off voltage: 30 V Surge capability: I pp = 30 A 8/20 µs Low capacitance device: 4.5 pf at 2 V RoHS package Low leakage current: 0.5 µa at 25 C 3 2 Description
LM134-LM234-LM334. Three terminal adjustable current sources. Features. Description
Three terminal adjustable current sources Features Operates from 1V to 40V 0.02%/V current regulation Programmable from 1µA to 10mA ±3% initial accuracy Description The LM134/LM234/LM334 are 3-terminal
CLASS-D VERTICAL DEFLECTION AMPLIFIER FOR TV AND MONITOR APPLICATION OUT CFLY + CFLY - BOOT VREG FEEDCAP FREQ. July 2001 1/8
CLASS-D VERTICAL DEFLECTION AMPLIFIER FOR TV AND MONITOR APPLICATION FEATURES PRELIMINARY DATA HIGH EFFICIENCY POWER AMPLIFIER NO HEATSINK SPLIT SUPPLY INTERNAL FLYBACK GENERATOR OUTPUT CURRENT UP TO.5
DISCRETE SEMICONDUCTORS DATA SHEET. BFQ34 NPN 4 GHz wideband transistor. Product specification File under Discrete Semiconductors, SC14
DISCRETE SEMICONDUCTORS DATA SHEET File under Discrete Semiconductors, SC4 September 995 DESCRIPTION PINNING NPN transistor encapsulated in a 4 lead SOTA envelope with a ceramic cap. All leads are isolated
STCS1. 1.5 A max constant current LED driver. Features. Applications. Description
1.5 A max constant current LED driver Features Up to 40 V input voltage Less than 0.5 V voltage overhead Up to 1.5 A output current PWM dimming pin Shutdown pin LED disconnection diagnostic DFN8 (3x3 mm)
SiGe:C Low Noise High Linearity Amplifier
Rev. 2 21 February 2012 Product data sheet 1. Product profile 1.1 General description The is a low noise high linearity amplifier for wireless infrastructure applications. The LNA has a high input and
P6KE. Transil, transient voltage surge suppressor (TVS) Features. Description. Complies with the following standards
Transil, transient voltage surge suppressor (TVS) Datasheet production data Features Peak pulse power: 600 W (10/0 µs ) Stand-off voltage range 6.8 to 440 V Unidirectional and bidirectional types Low clamping
DSL01-xxxSC5. Secondary protection for DSL lines. Features. Description. Applications. Benefits. Complies with the following standards
-xxxsc5 Secondary protection for DSL lines Features Low capacitance devices: -xxxsc5: Delta C typ = 3.5 pf High surge capability: 30 A - 8/20 µs Voltage: 8 V, 10.5 V, 16 V, and 24 V RoHS package Benefits
Obsolete Product(s) - Obsolete Product(s)
Vertical deflection booster for 3 App TV/monitor applications with 0 V flyback generator Features Figure. Heptawatt package Power amplifier Flyback generator Stand-by control Output current up to 3.0 App
W- Series. Features: WOB. Mechanical Data Case : Moulded plastic. Lead : Solder plated. Weight : 1.10 grams. Page <1> 15/07/08 V1.
Features: Surge overload ratings to 40 amperes peak. Ideal for printed circuit board. Reliable low cost construction. High temperature soldering guaranteed: 260 C/10 seconds/0.375inch (9.5mm) lead lengths
40 V, 200 ma NPN switching transistor
Rev. 01 21 July 2009 Product data sheet BOTTOM VIEW 1. Product profile 1.1 General description NPN single switching transistor in a SOT883 (SC-101) leadless ultra small Surface-Mounted Device (SMD) plastic
SG2525A SG3525A REGULATING PULSE WIDTH MODULATORS
SG2525A SG3525A REGULATING PULSE WIDTH MODULATORS 8 TO 35 V OPERATION 5.1 V REFERENCE TRIMMED TO ± 1 % 100 Hz TO 500 KHz OSCILLATOR RANGE SEPARATE OSCILLATOR SYNC TERMINAL ADJUSTABLE DEADTIME CONTROL INTERNAL
PINNING - TO220AB PIN CONFIGURATION SYMBOL
BTA4 series GENERAL DESCRIPTION QUICK REFERENCE DATA Passivated triacs in a plastic envelope, SYMBOL PARAMETER MAX. MAX. UNIT intended for use in applications requiring high bidirectional transient and
MC33079. Low noise quad operational amplifier. Features. Description
Low noise quad operational amplifier Datasheet production data Features Low voltage noise: 4.5 nv/ Hz High gain bandwidth product: 15 MHz High slew rate: 7 V/µs Low distortion: 0.002% Large output voltage
MOSFET N-channel enhancement switching transistor IMPORTANT NOTICE. http://www.philips.semiconductors.com use http://www.nxp.com
Rev. 3 21 November 27 Product data sheet Dear customer, IMPORTANT NOTICE As from October 1st, 26 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets
