DATA SHEET. PBR951 UHF wideband transistor DISCRETE SEMICONDUCTORS Aug 10

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1 DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D88 Supersedes data of 998 Jun 9 File under Discrete Semiconductors, SC4 998 Aug

2 FEATURES PINNING - SOT3 Small size Low noise Low distortion High gain Gold metallization ensures excellent reliability. PIN base emitter 3 collector DESCRIPTION APPLICATIONS Communication and instrumentation systems. 3 3 DESCRIPTION Silicon NPN transistor in a surface mount 3-pin SOT3 package. The transistor is primarily intended for wideband applications in the GHz-range in the RF front end of analog and digital cellular telephones, cordless phones, radar detectors, pagers and satellite TV-tuners. Top view Marking code: W. MAM55 Fig. Simplified outline and symbol. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT C re feedback capacitance I C = ; V CB = 6 V; f = MHz.4 pf f T transition frequency I C = 3 ma; V CE =6V; f m = GHz 8 GHz G UM maximum unilateral power gain I C = 3 ma; V CE =6V; T amb =5 C; 4 db f=ghz F noise figure Γ S = Γ opt ; I C = 5 ma; V CE =6V;.3 db f=ghz P tot total power dissipation T s =6 C; note 365 mw R th j-s thermal resistance from junction to soldering point P tot = 365 mw 35 K/W Note. T s is the temperature at the soldering point of the collector pin. 998 Aug

3 LIMITING VALUES In accordance with the Absolute Maximum Rating System IEC 34. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V CBO collector-base voltage open emitter V V CEO collector-emitter voltage open base V V EBO emitter-base voltage open collector.5 V I C collector current (DC) ma I C(AV) average collector current ma P tot total power dissipation T s =6 C; note 365 mw T stg storage temperature C T j junction temperature 75 C Note. T s is the temperature at the soldering point of the collector pin. THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT R th j-s thermal resistance from junction P tot = 365 mw; T s =6 C; note 35 K/W to soldering point; note Note. T s is the temperature at the soldering point of the collector pin. 998 Aug 3

4 CHARACTERISTICS T j =5 C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT DC characteristics V (BR)CBO collector-base breakdown voltage I C = µa; I E = V V (BR)CEO collector-emitter breakdown I C = µa; I B = V voltage V (BR)EBO emitter-base breakdown voltage I E =µa; I C =.5 V I CBO collector-base leakage current V CB = V; I E = na I EBO emitter-base leakage current V EB =V; I C = na h FE DC current gain I C = 5 ma; V CE = 6 V 5 I C = 5 ma; V CE =6V AC characteristics C re feedback capacitance I C = ; V CB = 6 V; f = MHz.4 pf f T transition frequency I C = 3 ma; V CE =6V; f m = GHz 8 GHz G UM maximum unilateral power gain; note I C = 3 ma; V CE =6V; T amb =5 C; f = GHz I C = 3 ma; V CE =6V; T amb =5 C; f = GHz F noise figure Γ S = Γ opt ; I C = 5 ma; V CE =6V; f=ghz Γ S = Γ opt ; I C = 5 ma; V CE =6V; f=ghz 4 db 8 db.3 db db Note. G UM is the maximum unilateral power gain, assuming S is zero. G UM = S log ( S ) ( S ) db 998 Aug 4

5 4 MDA887 MDA888 P tot (mw) h FE T s ( C) I C (ma) V CE =6V. Fig. Power derating as a function of soldering point temperature. Fig.3 DC current gain as a function of collector current; typical values..8 C re (pf).6 MDA889 f T (GHz) 8 MDA V CB (V) 3 I C (ma) 4 I C = ; f = MHz. V CE = 6 V; f = GHz; T amb =5 C. Fig.4 Feedback capacitance as a function of collector-base voltage; typical values. Fig.5 Transition frequency as a function of collector current; typical values. 998 Aug 5

6 gain (db) MSG 6 G max MDA89 5 gain (db) 4 G UM MDA89 G UM 3 MSG 8 G max 4 MSG 3 I C (ma) f (MHz) f = GHz; V CE =6V. I C = 5 ma; V CE =6V. Fig.6 Gain as a function of collector current; typical values. Fig.7 Gain as a function of frequency; typical values. 5 gain (db) 4 MSG G UM MDA893 5 gain (db) 4 MSG G UM MDA G max G max MSG MSG 3 4 f (MHz) 3 4 f (MHz) I C = 5 ma; V CE =6V. I C = 3 ma; V CE =6V. Fig.8 Gain as a function of frequency; typical values. Fig.9 Gain as a function of frequency; typical values. 998 Aug 6

7 4 F (db) () MDA895 4 F (db) MDA () () () (3) (3) (5) (4) I C (ma) 3 f (MHz) 4 V CE =6V. () f = MHz. () f = 5 MHz. (3) f = MHz. (4) f = 9 MHz. (5) f = 5 MHz. V CE =6V. () I C =3mA. () I C =5mA. (3) I C = 5 ma. Fig. Minimum noise figure as a function of collector current, typical values. Fig. Minimum noise figure as a function of frequency, typical values. 998 Aug 7

8 APPLICATION INFORMATION SPICE parameters for the die SEQUENCE No. PARAMETER VALUE UNIT IS.963 fa BF.3 3 NF. 4 VAF V 5 IKF 84. ma 6 ISE fa 7 NE.38 8 BR NR. VAR 3.98 V IKR 5.77 ma ISC 56.6 aa 3 NC.47 4 RB 6.7 Ω 5 IRB. µa 6 RBM.478 Ω 7 RE.64 Ω 8 RC.35 Ω 9 () XTB. () EG. ev () XTI 3. CJE.6 pf 3 VJE 6. mv 4 MJE TF 3.73 ps 6 XTF.5 7 VTF V 8 ITF ma 9 PTF. deg 3 CJC 49.9 ff 3 VJC 87. mv 3 MJC. 33 XCJC.4 34 TR. ps 35 () CJS. F 36 () VJS 7. mv 37 () MJS. 38 FC.888 SEQUENCE No. PARAMETER VALUE UNIT 39 () C bpb 73. ff 4 () C bpe 3. ff 4 AF. 4 KF 4 x 6 Notes. These parameters have not been extracted, the default values are shown.. C bpb, C bpe ; base-bondpad and emitter-bondpad capacitance to collector. B L Cbe L B QL B = 5; QL E = 5; QL B,E (f)=ql B,E (f/f c ); f c = scaling frequency = GHz. Fig. Package equivalent circuit SOT3. List of components (see Fig.) B' Ccb MBC964 DESIGNATION VALUE UNIT C be 7 ff C cb 8 ff C ce 8 ff L.35 nh L.7 nh L3.35 nh L B.4 nh L E.83 nh E' E C' L E L3 L Cce C 998 Aug 8

9 handbook, full pagewidth GHz GHz..5 5 GHz MHz 4 MHz. MHz MHz MDA77. V CE = 6 V; I C = 3 ma; Z o =5Ω. Fig.3 Common emitter input reflection coefficient (S ); typical values. handbook, full pagewidth MHz MHz MHz MHz GHz GHz 3 GHz MDA773 V CE = 6 V; I C = 3 ma. Fig.4 Common emitter forward transmission coefficient (S ); typical values. 998 Aug 9

10 handbook, full pagewidth GHz GHz MHz GHz 5 MHz MHz MDA774 V CE = 6 V; I C = 3 ma. Fig.5 Common emitter reverse transmission coefficient (S ); typical values. handbook, full pagewidth GHz GHz 4 MHz 5 MHz 3 GHz MHz 5 MHz MDA775. V CE = 6 V; I C = 3 ma; Z o =5Ω. Fig.6 Common emitter output reflection coefficient (S ); typical values. 998 Aug

11 handbook, full pagewidth unstable region source 9 unstable region load Γ OPT NF =.3 db G = 5 db.5 5 G = 4 db NF =.5 db NF =.7 db. G = 3 db f = GHz; V CE = 6 V; I C = 5 ma; Z o =5Ω. 9 MDA77. Fig.7 Common emitter available gain circles; typical values. handbook, full pagewidth 9 unstable region load G max = 9.64 db.6 8. NF =.6 db NF =.4 db..5 5 NF =. db 5.4. G = 9 db. Γ OPT 5 G = 8 db unstable region source 35 G = 7 db.5 45 f = GHz; V CE = 6 V; I C = 5 ma; Z o =5Ω. 9 MDA77. Fig.8 Common emitter available gain circles; typical values. 998 Aug

12 PACKAGE OUTLINE Plastic surface mounted package; 3 leads SOT3 D B E A X H E v M A 3 Q A A c e bp w M B Lp e detail X mm scale DIMENSIONS (mm are the original dimensions) UNIT A A max.. mm..9 b p c D E e e H E L p Q v w OUTLINE VERSION REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE SOT Aug

13 DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. Short-form specification The data in this specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 34). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 998 Aug 3

14 NOTES 998 Aug 4

15 NOTES 998 Aug 5

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