HAMAMATSU PHOTONICS K.K.

Transcription

1 Selection guide - March 215 Infrared Detectors Covering a broad spectral range in the infrared region INFRARED DETECTORS HAMAMATSU PHOTONICS K.K.

2 Infrared detectors Infrared detectors are widely used in diverse field including measurement, analysis, industry, communication, agriculture, medicine, physical and chemical science, astronomy and space. Based on long experience involving photonic technology, HAMAMATSU provides a wide variety of infrared detectors in order to meet a large range of application needs. In addition to the standard devices listed in this catalog, custom devices are also available on request. Please feel free to contact the nearest sales office in your. Contents InGaAs PIN photodiodes 1 PbS/PbSe photoconductive detectors 9 1 Infrared detectors

3 InAs/InAsSb/InSb photovoltaic detectors, InSb photoconductive detectors 11 MCT (HgCdTe) photoconductive/ photovoltaic detectors 14 Thermopile detectors (Si thermal detectors) 17 Two-color detectors 18 n drag detector 2 Accessories for infrared detectors 21 Description of terms 27 Infrared detectors 2

4 Infrared detectors HAMAMATSU infrared detectors range Product name Features Page Short enhanced type Can detect light from.5 μm Standard type High-speed response, high sensitivity, low dark current Available various types of photosensitive s, arrays and packages 1, 2 InGaAs PIN photodiodes For optical measurement around 1.7 μm Available type For optical measurement in the band of water content absorption (1.9 μm) Available type For NIR spectroscopy Available type 4 InGaAs image sensors Types for spectrophotometry and WDM monitor, and high-speed type available 6 to 8 Product name range Features Page PbS photoconductive detectors 13.2 conductive detectors whose resistance decreases with the input of infrared light Can be used at room temperatures in a wide range of applications such as radiation thermometers and flame monitors 9, 1 PbSe photoconductive detectors Detects s up to 5.2 μm Offers higher response speed at room temperatures compared to other detectors used in the same range. Suitable for a wide range of applications such as gas analyzers. 9, 1 InAs photovoltaic detectors Covers a spectral response range close to PbS but offers higher response speed 11 InAsSb photovoltaic detectors Infrared detectors in the 5 μm or 8 μm spectral band, with high sensitivity and high reliability High-speed response 11 InSb photovoltaic detectors High-speed and high sensitivity in so-called atmospheric window (3 to 5 μm) 12 InSb photoconductive detectors Detects s up to around 6.5 μm, with high sensitivity over long periods by thermoelectric cooling 12 MCT (HgCdTe) photoconductive detectors 1 25 Various types with different spectral response range are provided by changing the HgTe and CdTe composition ratio. High sensitivity photoconductive detectors whose resistance decreases with the input of infrared light Available with type and cryogenic dewar 14, 15 MCT (HgCdTe) photovoltaic detectors High-speed response and low noise 15 Thermopile detectors 1 25 Sensors that generate thermoelectromotive force in proportion to the energy level of incident infrared light 17 Si + PbS 3 Two-color detectors Si + PbSe Si + InGaAs Wide spectral response range from UV to IR Uses two detectors with different spectral response ranges, mounted one over the other along the same optical axis 18, 19 InGaAs + InGaAs n drag detector 1 High-speed detector with high sensitivity in 1 μm band (for CO2 laser detection) Room temperature operation with high-speed response 2 For detailed information on the products listed in this catalog, see their datasheets that are available from our website

5 of HAMAMATSU infrared detectors (typical example) 1 14 voltaic detectors conductive detectors Si thermal detectors 1 13 Short enhanced type InGaAs (25 C) Long type InGaAs (-196 C) 1 12 PbS (-2 C) D* (cm Hz 1/2 /W) InAs (-196 C) PbS (25 C) InSb (-196 C) InAsSb (-196 C) MCT (-196 C) MCT (-196 C) MCT (-196 C) Long type InGaAs (25 C) 1 9 Si (25 C) PbSe (25 C) InAsSb for 8 μm Band (-3 C) MCT (-6 C) PbSe (-2 C) Thermopile 1 8 InAsSb (-3 C) Wavelength KIRDB259EG When using infrared detectors, the following points should be taken into consideration for making a device selection. Law of black body radiation (Planck's law) As can be seen from the figure above, HAMAMATSU provides a variety of infrared detectors with different spectral response characteristics. It should be noted that cooling a detector element may affect its spectral response. For InGaAs, InAs, InSb and InAsSb detectors, the spectral response shifts to the shorter side; in contrast, for PbS, PbSe and MCT detectors it shifts to the longer side. Response speed Various detectors are available with different response speeds. It should be noted that the response speeds of the PbS and PbSe detectors become worse with cooling. sensitive and number of elements HAMAMATSU photosensors are available in a wide range of photosensitive sizes. Also available are multi-element detector arrays optimized for high-speed multichannel spectrophotometry. Spectral radiance N. (W cm -2 sr -1 μm -1 ) T(K)= Wavelength 1 1 KIRDB14EB Cooling Besides easy-to-use photosensors designed for room temperature, HAMAMATSU provides various types of sensors that are cooled with thermoelectric coolers, cryogenic dewars (for liquid nitrogen cooling). Object temperature When selecting a detector in accordance with the temperature of an object, it is necessary to consider the distribution of the energy (the dependency of the energy) radiated from the object. When the temperature of the object is changed, the distribution of the radiating energy is given by the law of black body radiation (Planck's law), as shown in the figure at the righthand side. The following relationship is established by the peak sensitivity and the absolute temperature T (K). T=2897.9

6 InGaAs PIN photodiodes Short enhanced type (Typ. Ta=25 C, unless otherwise noted) Cooling sensitive range λ Cutoff frequency fc VR=1 V (MHz) Option G1899-3K ϕ.3 3 G1899-5K ϕ.5 15 G1899-1K Non-cooled ϕ1.5 to G1899-2K ϕ2 1 G1899-3K ϕ3 5 TO-18 TO-5 C (P.25) Standard type Metal package Various photosensitive sizes are available. (Typ. Ta=25 C, unless otherwise noted) G1218-3A Cooling sensitive ϕ.3 G1218-5A ϕ.5 G1218-1A G1218-2A G1218-3A ϕ1 ϕ2 ϕ3 range λ Cutoff frequency fc (MHz) 6 (VR=5 V) 2 (VR=5 V) 6 (VR=5 V) 13 (VR=1 V) 7 (VR=1 V) TO-18 TO-5 Option G1218-5A Non-cooled ϕ5.9 to (VR=1 V) TO-8 C (P.25) G837-81* ϕ1 35 (VR=1 V) TO-18 G837-82* G837-83* ϕ2 ϕ3 4 (VR=1 V) 2 (VR=1 V) TO-5 G837-85* ϕ (VR=1 V) TO-8 G A G A G A G A G A G A G A G A One-stage (Td=-1 C) Two-stage (Td=-2 C) ϕ1 ϕ2 ϕ3 ϕ5 ϕ1 ϕ2 ϕ3 ϕ5.9 to to (VR=1 V) 13 (VR=1 V) 7 (VR=1 V) 3 (VR=1 V) 4 (VR=1 V) 13 (VR=1 V) 7 (VR=1 V) 3 (VR=1 V) TO-8 C (P.25) A3179 (P.23) C113-4 (P.22) C (P.25) A (P.23) C113-4 (P.22) G Non-cooled ϕ.8.9 to 1.7 * Low PDL (polarization dependent loss) type 1 Infrared detectors 2 (VR=5 V) TO-18 with CD lens

7 InGaAs PIN photodiodes Ceramic package sensitive range λ Cutoff frequency fc VR=5 V (MHz) (Typ. Ta=25 C) G R ϕ 1 Surface mount type ceramic G R ϕ.3.9 to G837-1 ϕ1.1 (VR= V) Ceramic Surface mount type sensitive range λ Cutoff frequency fc VR=5 V (MHz) (Typ. Ta=25 C) Type G ϕ to 1.7 G ϕ Ceramic (non-sealed) Frontilluminated type G to ϕ.3 G P.9 to Plastic COB G1899 series, etc. G1218 series G11193 series, G837-1, etc. sensitivity (A/W) G837-81/-82/-83/-85 Si photodiode S1337-BQ G G8941 series G1899 series (Typ. Ta=25 C) sensitivity (A/W) Td=25 C Td=-1 C Td=-2 C sensitivity (A/W) (Typ. Ta=25 C) G P G11193 series G Si photodiode S1337-BR KIRDB444EE KIRDB374EB KIRDB284EC Infrared detectors 2

8 Long type : 1.75 μm These are suitable for optical measurement around 1.7 μm. (Typ. Ta=25 C, unless otherwise noted) Cooling sensitive range λ Cutoff frequency fc VR= V (MHz) Option G K ϕ.3 9 G K ϕ.5 35 G K Non-cooled ϕ1.9 to G K ϕ2 2.5 G K ϕ3 1.5 TO-18 TO-5 C (P.25) G K ϕ.3 14 G K ϕ.5 5 One-stage G K ϕ1.9 to (Td=-1 C) G K ϕ2 3.5 G K ϕ3 1.8 TO-8 C (P.25) A3179 (P.23) C113-4 (P.22) G K ϕ.3 15 G K ϕ.5 53 G K Two-stage (Td=-2 C) ϕ1.9 to G K ϕ2 3.7 G K ϕ3 1.9 TO-8 C (P.25) A (P.23) C113-4 (P.22) : 1.95 μm These are suitable for optical measurement in the 1.9 μm band such as water absorption. Cooling sensitive range λ Cutoff frequency fc VR= V (MHz) (Typ. Ta=25 C, unless otherwise noted) Option G K ϕ.3 9 G K ϕ.5 35 G K Non-cooled ϕ1.9 to G K ϕ2 2.5 G K ϕ3 1.5 TO-18 TO-5 C (P.25) G K ϕ.3 14 G K ϕ.5 5 One-stage G K ϕ1.9 to (Td=-1 C) G K ϕ2 3.5 G K ϕ3 1.8 TO-8 C (P.25) A3179 (P.23) C113-4 (P.22) G K ϕ.3 15 G K ϕ.5 53 G K Two-stage (Td=-2 C) ϕ1.9 to G K ϕ2 3.7 G K ϕ3 1.9 TO-8 C (P.25) A (P.23) C113-4 (P.22) 3 Infrared detectors

9 : 2.3 μm InGaAs PIN photodiodes These are suitable for use in NIR (near infrared) spectroscopy. (Typ. Ta=25 C, unless otherwise noted) Cooling sensitive range λ Cutoff frequency fc VR= V (MHz) Option G K ϕ.3 5 G K ϕ.5 2 TO-18 G K Non-cooled ϕ1.9 to C (P.25) G K ϕ2 1.5 G K ϕ3.8 TO-5 G K ϕ.3 7 G K ϕ.5 25 One-stage G K ϕ1.9 to (Td=-1 C) G K ϕ2 2 G K ϕ3.9 TO-8 C (P.25) A3179 (P.23) C113-4 (P.22) G K ϕ.3 75 G K ϕ.5 28 G K Two-stage (Td=-2 C) ϕ1.9 to G K ϕ2 2.3 G K ϕ3 1 TO-8 C (P.25) A (P.23) C113-4 (P.22) G12181 series G12182 series G12183 series Td=25 C Td=-1 C Td=-2 C (Typ. VR= V) Td=25 C Td=-1 C Td=-2 C (Typ. VR= V) Td=25 C Td=-1 C Td=-2 C (Typ. VR= V) sensitivity (A/W) sensitivity (A/W) sensitivity (A/W) KIRDB483EC KIRDB487EC KIRDB491EC Infrared detectors 4

10 Infrared detector modules with preamp These modules consist of the InGaAs PIN photodiode assembled with matched preamplifier, and operate by connecting a DC power supply. Detector Cooling sensitive Measurement condition Element temperature ( C) Cutoff λc G6121 G837-5 Non-cooled ϕ C G K ϕ1 C G K C G A ϕ G G G (chip) G (chip) Liquid nitrogen ϕ1 ϕ Note: Supplied with a power supply cable 1 13 (Typ. Td=25 C) C G7754-1/-3 G6121 D* λ (cm Hz 1/2 /W) C C KIRDB369EE 5 Infrared detectors

11 InGaAs PIN photodiodes Image sensors, photodiode arrays InGaAs linear image sensors for spectrophotometry One-stage types can be cooled down to -1 C and cover a spectral range from.9 to 1.67 μm. Cooling Pixel pitch G S Number of pixels G S One-stage G S (Td=-1 C) G S sensitive (mm mm) range λ Defective pixels Applicable driver circuit.9 to % max. C861-1 Output can be obtained from all pixels since there are no defective pixels. Suitable for precision measurement. Cooling Pixel pitch Number of pixels G S One-stage G S (Td=-1 C) sensitive (mm mm) range λ to 1.67 Defective pixels Applicable driver circuit C861-1 G D Non-cooled.9 to 1.7 G S One-stage (Td=-1 C) to 1.67 C861-1 G D Non-cooled.9 to 1.7 G S One-stage (Td=-1 C) to 1.67 C861-1 Two-stage types can be cooled down to -2 C, which make them suitable for measuring longer s from.9 to 2.55 μm. Cooling Pixel pitch Number of pixels sensitive (mm mm) range λ Defective pixels G W % max..9 to 1.85 G W % max. Applicable driver circuit G W.9 to % max. G926-2 Two-stage.9 to G W (Td=-2 C) to % max. C862-1 G W.9 to G W.9 to % max. G W to % max. Infrared detectors 6

12 High-speed type InGaAs linear image sensors These are high-speed linear image sensors suitable for industrial and measurement equipment. Cooling Pixel pitch Number of pixels sensitive (mm mm) range λ Defective pixels Applicable driver circuit G D Non-cooled.9 to 1.7 1% max. C182 G D These are 124 pixels, high-speed NIR linear image sensors designed for applications such as a foreigh object screening and medical diagnostic equipment where a multichannel high-speed line rate is required. Cooling Pixel pitch Number of pixels sensitive (mm mm) range λ Defective pixels Applicable driver circuit G D Non-cooled G DB to 1.7 1% max. C1854 Back-illuminated type InGaAs linear image sensor These linear image sensors use a back-illuminated type InGaAs photodiode array that is bump-connected to a CMOS-ROIC with a single output terminal. Cooling Pixel pitch Number of pixels sensitive (mm mm) range λ Defective pixels Applicable driver circuit G DD G DE C11514 G DA Non-cooled 5 G DA G DF G DA to 1.7 1% max. C11513 G SA One-stage G SA (Td=-1 C) to 1.67 G921 to G928 series, etc. G1768 series sensitivity (A/W) Td=25 C Td=-1 C G W Td=-2 C G W G921 to G924/ G9211 to G9214/ G9494 series G11135 series G1162 series G W G W sensitivity (A/W) C 25 C 5 C KMIRB68EC KMIRB42EB 7 Infrared detectors

13 InGaAs PIN photodiodes InGaAs image sensors Here is a hybrid structure consisting of a CMOS readout circuit (ROIC: readout integrated circuit) and back-illuminated InGaAs photodiode array. Cooling Pixel pitch Number of pixels sensitive (mm mm) range λ Defective pixels Applicable driver circuit G S C11512 One-stage.95 to 1.7 (Td=25 C) G S C G S One-stage (Td= C) 1% max to 1.9 C11512 G W C Two-stage 2.95 to 1.7 (Td=15 C) G W % max. C12376 InGaAs photodiode arrays (Typ. Ta=25 C) sensitive range λ G G6849 ϕ1 (Quadrant element) ϕ2 (Quadrant element) TO-5 G (16-element) G G D.8 (16-element) (16-element).9 to Ceramic G D 1. (32-element) G D 1. (46-element) G899-1 ϕ.8 (4-element) Ceramic (Non-sealed) InGaAs image sensors G S InGaAs photodiode arrays 1. (Typ. Ta=25 C) 1.2 (Typ. Ta=25 C) 1. (Typ. Ta=25 C) sensitivity (A/W).6.4 sensitivity (A/W) sensitivity (A/W) KIRDB2EB KMIRB51EB KMIRB78EA Infrared detectors 8

14 PbS/PbSe photoconductive detectors PbS and PbSe detectors are photoconductive sensors whose resistance decreases with the input of infrared light. PbS has a spectral response range from 1 to 3.2 μm, while the PbSe has a wider spectral range from 1.5 to 5.2 μm. PbS photoconductive detectors are infrared sensors having a spectral response range from 1 to 3.2 μm. These sensors can be used at room temperature in a wide range of applications such as radiation thermometers and flame monitors. P9217 PbS photoconductive detectors Cooling sensitive 1 5 P P Non-cooled 3 3 Cutoff λc P TO-8 TO-5 Option C (P.26) P P One-stage (Td=-1 C) Two-stage (Td=-2 C) TO-8 C (P.26) A3179 (P.23) C113-4 (P.22) C (P.26) A (P.23) C113-4 (P.22) 1 12 P (Td=-2 C) D* (λ, 6, 1) (cm Hz 1/2 /W) P (Td=25 C) P (Td=-1 C) KIRDB375EA PbSe photoconductive detectors PbSe photoconductive detectors are infrared sensors having a spectral response range from 1.5 to 5.2 μm. These sensors deliver high sensitivity and high-speed response at room temperatures. Cooled types are also available with a higher S/N making them widely used in precision photometry such as analytical and measuring instrument. P Cooling sensitive 2 2 P Non-cooled Cutoff λc P327-8* Rise time max. (μs) 1 TO-5 Option C (P.26) P One-stage P (Td=-1 C) 3 3 P Two-stage P (Td=-2 C) 3 3 * Incorporates a band-pass filter, spectral response range: 4.15 to 4.35 μm 9 Infrared detectors 2 TO-8 C (P.26) A3179 (P.23) C113-4 (P.22) C (P.26) A (P.23) C113-4 (P.22)

15 PbS/PbSe photoconductive detectors P9696 series P D* (λ, 6, 1) (cm Hz 1/2 /W) Td=25 C Td=-2 C Td=-1 C D* (λ, 6, 1) (cm Hz 1/2 /W) KIRDB342EF KIRDB54EB Infrared detector modules with preamp These modules consist of an infrared detector assembled with a matched preamplifier, and operate by connecting a DC power supply. Detector sensitive Cooling Measurement condition Element temperature ( C) Cutoff λc P4245 PbSe (P9696-3) 3 3 Non-cooled P4638 P4639 PbS (P2682-1) PbSe (P ) Note: Supplied with a power supply cable (Typ. Td=25 C) D* (λ, 6, 1) (cm Hz 1/2 /W) P4639 P4245 P KIRDB37ED Infrared detectors 1

16 InAs/InAsSb/InSb photovoltaic detectors, InSb photoconductive detectors InAs photovoltaic detectors are capable of detecting infrared light up to approx. 3.5 μm. InSb photovoltaic detector can sense infrared light up to approx. 5.5 μm, and InSb photoconductive detectors infrared light up to approx. 6 μm. InAsSb photovoltaic detectors also delivers high sensitivity in the 5 μm or 8 μm band. InSb photoconductive detectors are available in multi-element arrays (custom-made product). InAs and InSb photovoltaic detectors cover a spectral response range equivalent to PbS and PbSe photoconductive detectors, respectively, and feature higher response speed and better S/N. InAs photovoltaic detectors InAs photovoltaic detectors are high-speed, low-noise infrared detectors capable of detecting infrared light up to approx. 3.5 μm. Cooling sensitive Cutoff λc Option P19-1 Non-cooled TO-5 C (P.25) P19-11 P19-21 One-stage (Td=-1 C) Two-stage (Td=-3 C) ϕ TO-8 A (P.23) C113-4 (P.22) C (P.25) A (P.23) C113-4 (P.22) C (P.25) P7163 Liquid nitrogen (Td=-196 C) Metal dewar C (P.25) InAsSb photovoltaic detectors This InAsSb photovoltaic detectors deliver high sensitivity in the 5 μm or 8 μm band due to our unique crystal growth technology. Cooling sensitive Cutoff λc Option P Liquid nitrogen (Td=-196 C) Metal dewar C (P.25) P Two-stage ϕ P (Td=-3 C) TO-8 C (P.25) P MA Non-cooled TO-46 - InAs photovoltaic detectors InAsSb photovoltaic detectors C-H type CO2, SOX CO NOX D* (λ, 12, 1) (cm Hz 1/2 /W) P19-21 (Td=-3 C) P19-1 (Td=25 C) P19-11 (Td=-1 C) P7163 (Td=-196 C) D* (λ, 12, 1)(cm Hz 1/2 /W) P (Td=-196 C) P (Td=-3 C) P (Td=-3 C) P MA (Td=25 C) Infrared detectors KIRDB356ED KIRDB43EF

17 InAs/InAsSb/InSb photovoltaic detectors, InSb photoconductive detectors InSb photovoltaic detectors InSb photovoltaic detectors are high-speed, low-noise infrared detectors that deliver high sensitivity in the so-called atmospheric window between 3 and 5 μm. The infrared light in the 5 μm band can be detected with peak sensitivity and high response speed. A metal dewar type cooled with liquid nitrogen is also available. Cooling sensitive Cutoff λc Option P ϕ.6 P ϕ1 C (P.25) P ϕ2 C (P.25) Liquid nitrogen Metal dewar (Td=-196 C) Custom-made P ϕ3 product P (16-element) P (4 4-element) InSb photoconductive detectors Thermoelectrically cooled InSb photoconductive detectors are capable of detecting infrared light up to around 6 μm with high sensitivity and high speed. Cooling sensitive Cutoff λc Option P P One-stage (Td=-1 C) Two-stage (Td=-3 C) TO-8 A (P.23) C113-7 (P.22) C (P.26) A (P.23) C113-7 (P.22) C (P.26) P P Three-stage (Td=-6 C).5.5 P TO-3 A (P.23) C113-5 (P.22) C (P.26) InSb photovoltaic detectors InSb photoconductive detectors 1 12 (Typ. Td=-196 C) 1 11 P (Td=-6 C) D* (, 12, 1) (cm Hz 1/2 /W) 1 11 D* (, 12, 1) (cm Hz 1/2 /W) P (Td=-3 C) P (Td=-1 C) KIRDB63EE KIRDB166EC Infrared detectors 12

18 Infrared detector modules with preamp These modules consist of the InSb detector assembled with the matched preamplifier, and operate by connecting a DC power supply. Detector sensitive Cooling Measurement condition Element temperature ( C) Cutoff λc P InSb (P666-31) P7751-1* 1 P7751-2* 1 InSb (P5968-6) InSb (P5968-2) ϕ.6 ϕ2 Liquid nitrogen C InAs (P19-21) ϕ *1: FOV=6 Note: Supplied with a power supply cable 1 12 P7751-1/-2 (Td=-196 C) D* (λ, 12, 1) (cm Hz 1/2 /W) C (Td=-28 C) P (Td=-58 C) KIRDB371EF 13 Infrared detectors

19 MCT (HgCdTe) photoconductive/photovoltaic detectors MCT photoconductive detectors decrease their resistance when illuminated by infrared light and are available with various ranges of spectral response up to 22 μm. MCT photovoltaic detectors generate a photocurrent when illuminated by infrared light. MCT photoconductive detectors Metal package Non-cooled type and one-stage type have sensitivity up to 1 μm, making them suitable for CO2 laser detection. Two or threestage types deliver high sensitivity in detecting short s. Cooling sensitive Cutoff λc Option P Non-cooled With BNC connector Custom-made product P One-stage (Td= C) TO-8 A (P.23) C113-7 (P.22) P TO-8 Two-stage P TO-66 (Td=-3 C) A3179-1* 2 (P.23) C113-7 (P.22) C (P.26) P TO-8 P275 Three-stage 1 1 P275-6 (Td=-6 C) TO-3 A (P.23) C113-5 (P.22) C (P.26) *2: For P3981 and P The heatsink for the P is a custom product. Metal dewar type These include MCT detectors whose peak sensitivity at 1 μm is suitable for non-contact temperature measurements at room temperature and MCT detectors whose high sensitivity at longer s (narrow, medium, and wide bands) makes them suitable for FTIR. Cooling sensitive Cutoff λc Option P A3515* 3 (P.22) P P P / 8-element Liquid nitrogen P (Td=-196 C) P Side-on type metal dewar A3515 (P.22) C (P.26) P P P Head-on type metal dewar *3: The amplifier for the P is available upon request (custom-made product). Infrared detectors 14

20 P3257-3/-11 P3981 series P275 series P275 (Td=-6 C) D* (λ, 6, 1) (cm Hz 1/2 /W) P (Td=25 C) P (Td= C) D* (λ, 12, 1) (cm Hz 1/2 /W) Td= C Td=-3 C D* (λ, 12, 1) (cm Hz 1/2 /W) P275-8 (Td=-3 C) KIRDB164EG KIRDB66EF KIRDB68EF P3257-1/-1/-25, P P2748/P5274 series 1 11 (Typ. Td=-196 C) 1 11 (Typ. Td=-196 C) P2748-4/-41/-42 D* (λ, 12, 1) (cm Hz 1/2 /W) 1 1 D* (λ, 12, 1) (cm Hz 1/2 /W) P5274 P KIRDB169EB KIRDB72EH MCT photovoltaic detectors Cooling sensitive Cutoff λc Option P Liquid nitrogen ϕ.5 P (Td=-196 C) ϕ Metal dewar C (P.25) 1 11 (Typ. Td=-196 C) D* (λ, 12, 1) (cm Hz 1/2 /W) KIRDB334EC 15 Infrared detectors

21 MCT (HgCdTe) photoconductive/photovoltaic detectors Infrared detector modules with preamp These modules consist of an MCT detector assembled with a matched preamplifier, and operates by connecting a DC power supply. Detector sensitive Cooling Measurement condition Element temperature ( C) Cutoff λc C S MCT (P3981) C M MCT (P275) C L MCT (P ) C V MCT (P2748-4) Metal dewar Note: Supplied with a power supply cable 1 12 D* (λ, 12, 1) (cm Hz 1/2 /W) C S (Td=-25 C) C M (Td=-58 C) C L (Td=-196 C) C L (Td=-3 C) KIRDB372EG Infrared detectors 16

22 Thermopile detectors (Si thermal detectors) Single-element type Hamamatsu provides high-sensitivity thermopile detectors suitable for gas concentration measurement, etc. Concentration of various types of gases can be measured by attaching a band-pass filter to thermopile detectors. The T is suitable for flame detection and the T for CO2 concentration measurement. Number of elements sensitive Window T AR-coated Si 3 to 5 T Band-pass filter 4.45 TO T * 1 AR-coated Si 3 to 5 T * 1 Band-pass filter 4.3 *1: Built-in thermistor Dual-element type The T is a dual-element type thermopile detector designed to detect CO2 concentrations with a high accuracy. It consists of a high sensitivity dual-element thermopile detector and two band-pass filters for sensing two s (reference: 3.9 μm, CO2: 4.3 μm) simultaneously. Number of elements sensitive Window T TO (per 1 element) Band-pass filter Reference: 3.9 CO2: 4.3 Window options (typical examples of spectral response) Since thermopile detectors have no dependence, their spectral response characteristics are determined only by the transmittance of the window material. The graph below shows transmittance characteristics of typical window materials. Please contact our sales office about changing the window of a thermopile detector to the following materials. 1 9 AR-coated Si T µm long pass 8 8 to 14 µm band-pass 7 Transmittance (%) µm band-pass T (reference) 4.3 µm band-pass T (CO2) Si µm band-pass KIRDB512EA 17 Infrared detectors

23 Two-color detectors Two-color detectors use a combination of two light sensors with different spectral response, in which one sensor is mounted over the other sensor along the same optical axis to provide a broad spectral response range. Thermoelectrically cooled two-color detectors are also provided that cool the sensors to maintain their temperatures constant, allowing high precision measurement with an improved S/N. Cooling Detector K K K K K K1198-1K K K K K K K K K K Non-cooled One-stage (Td=-1 C) Non-cooled sensitive Spectral response range λ Peak sensitivity sensitivity S (A/W) TO-8 Option Si PbS to (V/W) C9329 C Si to (P.26) PbSe (V/W) Si to 1.7 InGaAs ϕ Si TO-5 C to 2.6 C InGaAs ϕ (P.25) Si to 1.7 InGaAs ϕ InGaAs C to 2.55 InGaAs ϕ (P.25) Si C9329 PbS to 3.1 C (V/W) (P.26) Si A PbSe (P.23) to (V/W) C113-4 (P.22) Si to 1.67 InGaAs ϕ Si to 2.57 InGaAs ϕ Si to 1.67 InGaAs ϕ Si to 1.65 InGaAs ϕ InGaAs to 2.55 InGaAs ϕ Ceramic C9329 C (P.25) A (P.23) C113-4 (P.22) K1713-1/-2, K3413-1/-2 [ Si photodiode ] [ PbS photoconductive detector ] [ PbSe photoconductive detector ] 1 14 (Typ. Ta=25 C) 1 11 (Typ. Ta=25 C) 1 1 (Typ. Ta=25 C) Td=-1 C Td=-1 C D* λ (cm Hz 1/2 /W) 1 13 D* (λ, 6, 1) (cm Hz 1/2 /W) 1 1 Td=25 C D* (, 6, 1) (cm Hz 1/2 /W) Td=25 C KIRDB58EE KIRDB282EB KIRDB283EC Infrared detectors 18

24 K1713-5/-8/-9 [ Si photodiode ] [ InGaAs PIN photodiode ].7 (Typ. Ta=25 C).7 (Typ. Ta=25 C).6.6 sensitivity (A/W) sensitivity (A/W) K K1713-5/ KIRDB199EA KIRDB211EA K3413-5/-8/-9 [ Si photodiode ] [ InGaAs PIN photodiode ].7 (Typ. Ta=25 C).7 (Typ. Td=-1 C).6.6 sensitivity (A/W) sensitivity (A/W) K K3413-5/ KIRDB199EA KIRDB212EA K1198-1K, K K K K 1.2 (Typ. Ta=25 C).7 (Typ. Ta=25 C) 1..6 sensitivity (A/W) InGaAs (λc=1.7 µm) InGaAs (λc=2.55 µm) sensitivity (A/W) Si InGaAs KIRDB479EB KIRDB598EB 19 Infrared detectors

25 n drag detector The photon drag detector makes use of the photon drag effect in which holes created in a semiconductor by incident photons are dragged along in the direction of the photons, generating an electromotive force. Because of its sensitivity at 1.6 μm, this detector is suitable for detection of CO2 lasers. The surface of the detector element is coated with a non-reflective material. Non-cooled type Cooling sensitive sensitivity S λ=1.6 μm (V/W) Magnet stand B749 Non-cooled ϕ A1447 Dimensional outlines (unit: mm, tolerance unless otherwise noted: ±1) B749 Magnet stand A ± ± 2 1/4-2UNC ±.5 sensitive 2 KIRDA16EE /4-2UNC BNC connector 16 min. 23 max. 5.5 KIRDA17EA Infrared detectors 2

26 Accessories for infrared detectors HAMAMATSU provides following accessories for infrared detectors. Temperature controllers (P.22) Heatsinks for detector (P.23) Chopper (P.24) Amplifiers for infrared detectors (P.25) A connection example is shown below. Connection example * 1 Power supply (±15 V) Chopper C4696 detector* 3 Heatsink for detector A3179 series * 2 POWER OUT Amplifier for infrared detector C4159/C5185 series C Measuring instrument Power supply (1 V, 115 V, 23 V) C GND +12 V POWER CHOPPER TRIG * 3 Chopper driver circuit (accessory of C4696) Temperature controller C113 series Power supply (+12 V) KACCC321EB Cable no. Cable Length approx. Coaxial cable (for signal) 2 m 4-conductor cable (with a connector) A Power supply cable (with a 4-conductor connector) A BNC connector cable E m Option Power supply cable (for temperature controller) Chopper driver cable (connected to chopper) 2-conductor cable or coaxial cable (for chopper power supply) 3 m 2 m Note Supplied with heatsink A3179 series. When using this cable, make it as short as possible (preferably approx. 1 cm). Supplied with temperature controller C113 series. This cable is also sold separately. This cable is supplied with the C4159/C5185 series amplifiers for infrared detectors, the C3757-2, and infrared detector modules with preamps (room temperature type). This cable is also sold separately. Besides this cable, the A4372-3, which is a power supply cable (with a 6-conductor connector) supplied with infrared detector modules with preamps (cooled type), is also sold separately. 1.9 m Supplied with temperature controller C113 series 2 m Connected to chopper driver circuit 2 m or less Prepared by user *1: Attach the bare wire ends to a 3-pin or 4-pin connector or to a banana jack, and then connect them to the power supply. *2: Soldering is needed. When using the C5185 series amplifier, a BNC connector (prepared by the user, example: one end of the E2573) is required. *3: No socket is available. Soldering is needed. Note: Refer to the datasheet "Accessories for infrared detectors" for detailed information about cables. 21 Infrared detectors

27 Accessories for infrared detectors Temperature controllers C113 series The C113 series is a temperature controller designed for infrared detectors. The C113 series allows temperature setting for the TE-cooler mounted in an infrared detector. Specifications Applicable detector* 4 Parameter C113-4 C113-5 C113-7 One-stage/two-stage type PbS, PbSe photoconductive detectors, Two-stage/three-stage type InAs photovoltaic detectors, MCT, InSb photoconductive detectors InGaAs, Si photodiodes One-stage type MCT, InSb photoconductive detectors Setting element temperature -3 to +2 C -75 to -25 C -3 to +2 C Temperature stability Within ±.1 C Temperature control output current 1.1 A min., 1.2 A typ., 1.3 A max. Power supply 1 V ± 1% 5/6 Hz* 5 Power consumption 3 W Dimensions 17 (W) 87 (H) 19 (D) mm Weight Approx. 1.9 kg Operating temperature +1 to +4 C Operating humidity 9% max. Storage temperature* 6-2 to +4 C Accessories Instruction manual 4-conductor cable (with a connector, 3 m) A4372-5* 7, power supply cable *4: It does not correspond to type infrared detector module with preamp. *5: Please specify power supply requirement (AC line voltage) from among 1 V, 115 V and 23 V when ordering. *6: No condensation *7: When used in combination with the A3179 series heatsink, do not use the 4-conductor cable supplied with the A3179 series, but use the A instead. Block diagram C113 series detector Thermistor Comparator Amp circuit Current circuit element Power supply AC input KIRDC8EB Valve operator for metal dewar A3515 With this valve operator, metal dewars can be re-evacuated to maintain the desired vacuum level. Refer to the instruction manual for details. Please be aware that the detector performance is not guaranteed after re-evacuation is performed with the valve operator. Vaccum pump Valve operator Metal dewar type detector Dimensional outline (unit: mm) Pump tube 9.5 ±.5 Gland nut Leak mount Knob O-ring 8. ± 1 (closed) 115. ± 1 (open) KIRDA21EC Infrared detectors 22

28 Heatsinks for detectors (TO-8, TO-3 package) A3179 series These heatsinks are designed for use with thermoelectrically cooled detector sealed in a 6-pin TO-8, TO-3 package. The cooling (heat dissipation) capacity of the A3179 and A is approx. 35 C relative to the ambient temperature 25 C, the A is approx. 4 C, and that of the A is approx. 85 C. The A is designed only for two-color detector K3413 series, the A3179 for one-stage TO-8, the A for two-stage TO-8, the A for TO-3 (heatsink for TO-66 is available as a custom product.). Accessories Instruction manual 4-conductor cable (2 m): for TE-cooler and thermistor* 1 * 2 Coaxial cable (2 m): for signal* 2 *1: When used in combination with the C113 series temperature controller, do not use the 4-conductor cable supplied with the A3179 series, but use the 4-conductor cable A (sold separately, with a connector) that comes with the C113 series. *2: No socket is supplied for connection to infrared detectors. Connect infrared detectors by soldering. Cover the soldered joints and detector pins with vinyl insulating tubes. Dimensional outlines (unit: mm, tolerance unless otherwise noted: ±.3) A3179 A3179-1, A * 1.4 ±.3* 2 sensitive surface* 3 Detector metal package 32 (4 ) 3.5 * 1.4 ±.3* 2 sensitive surface* 3 Detector metal package 32 (4 ) ± 46 4 ± ± 46 4 ± B Weight: approx. 5 g *1: Bottom surface (reference surface) of detector metal package *2: When the detector is installed *3: The position of the photosensitive surface differs according to the detector used. Refer to the dimensional outline for the detector. KIRDA18EE 36 A3179-1: B=6 A3179-3: B=6.4 Weight: approx. 53 g *1: Bottom surface (reference surface) of detector metal package *2: When detector is installed *3: The position of the photosensitive surface differs according to the detector used. Refer to the dimensional outline for the detector. KIRDA19EE A ±.3 3 ±.5 Fixation board (4 ) 3.5 ±.5 38 ± ±.5 45 sensitive surface ±.3 8 Weight: approx. 32 g KIRDA149EC 23 Infrared detectors

29 Accessories for infrared detectors Chopper C4696 Specifications Parameter Specification Chopping frequency 115 to 38 Hz, 345 Hz typ.* 3 Operating voltage VD DC 5 to 13 V, 12 V typ. Duty ratio 1:1 Rotational stability.6%/ C Sync signal VH Min. VD -.5 V (high level) Max. VD - V Operating temperature to 5 C Maximum current consumption* 4 9 ma Accessories Magnet stand A1447 (see P.2), driver circuit *3: Chopping frequency will be 23 to 76 Hz when an optional disk is used. *4: VD=12 V Dimensional outline (unit: mm, tolerance unless otherwise noted: ±1) Chopping frequency vs. operating voltage <Chopper> 22.3 to (adjustable) Output window 8. A1447 (Magnet stand) Input window 4. 6-pin receptacle cord length 2 m (for connection to driver circuit) Chopping frequency (Hz) When used with optional disk C Operating voltage (V) <Driver circuit> 6-pin connector KIRDB376EA GND COUNTER +12 V ON-OFF TRIG BNC KIRDA22EA Infrared detectors 24

30 Amplifiers for infrared detectors C4159/C5185 series, C These are low noise amplifiers for InSb, InAs, InAsSb, InGaAs, MCT, PbS and PbSe detectors Accessories Instruction manual Power cable (one end with 4-pin connector for connection to amplifier and the other end unterminated, 2 m) A Required power supply specifications C4159 series: ±15 V ±.5 C5185 series: ±15 V ±.5 Current capacity: 1.5 times or more of amplifier's maximum current consumption Ripple noise: 5 mvp-p or less Analog power supply only Recommended DC power supply (example): E362A, E363A (Agilent Technologies) Absolute maximum ratings (Ta=25 C) Parameter Value Unit Operating temperature to +4 C Storage temperature -2 to +7 C Amplifiers for photovoltaic detectors Parameter C C C C C Unit Applicable detector* 1 * 2 * 3 Conversion impedance Dewar type InSb (P5968-6, P5968-1) Dewar type InAsSb (P ) 1 8, 1 7, 1 6 (3 ranges switchable) Dewar type InSb (P5968-2) 2 1 7, 2 1 6, (3 ranges switchable) Dewar type InAs (P7163) 1 8, 1 7, 1 6 (3 ranges switchable) type InAs (P19-11/-21) Non-cooled type InAs (P19-1) type InAsSb (P , P ) Dewar type MCT 1 6, 1 5, 1 4 (3 ranges switchable) Frequency response (amp only, -3 db) DC to 1 khz* 4 DC to 45 khz DC to 15 khz DC to 1 khz - Output impedance 5 Ω Maximum output voltage (1 kω load) +1 V Output offset voltage ±5 ±5 ±1 ±5 mv Equivalent input noise current* 5 (f=1 khz).15 (1 8, 1 7 range).65 (1 6 range) (1 8, 1 7 range).65 (1 6 range) *1: These amplifiers cannot operate multiple detectors. *2: Consult us before purchasing if you want to use with a detector other than listed here. *3: Consult us before purchasing if you want to use with a multi-element detector. *4: When connected to a detector, frequency response becomes 6 khz or less depending on the detector photosensitive. (ϕ.6 mm: 6 khz or less, ϕ1 mm: 25 khz or less) Ringing occurs in the output if the rise time tr ( to 9%) of incident light is approximately 1 μs or less. The ringing becomes larger as the rise time becomes shorter. No ringing occurs when detecting sine-wave light. (For information on the ringing specifications, refer to the datasheet "Amplifier for infrared detector".) *5: Input resistance: 1 MΩ (C4159-1/-4/-5), 5 Ω (C4159-6/-7) *6: Recommended DC power supply (analog power supply): ±15 V Current capacity: More than 1.5 times the maximum current consumption Ripple noise: 5 mvp-p or less 25 Infrared detectors - V/A 6 1 pa/hz 1/2 Reverse voltage Limited to V operation - External power supply* 6 ±15 V Current consumption +3, -1 max. +3, -22 max. ma Amplifiers for InGaAs PIN photodiodes Parameter C Unit Applicable detector* 1 * 2 InGaAs - Conversion impedance 1 7, 1 6, 1 5 (3 ranges switchable) Frequency response (amp only, -3 db) DC to 15 khz - Output impedance 5 Ω Maximum output voltage (1 kω load) +1 V Output offset voltage ±5 mv Equivalent input noise current (f=1 khz) 2.5 pa/hz 1/2 Reverse voltage Can be applied from external unit - External power supply* 5 ±15 V Current consumption ±15 max. ma Note: Output noise voltage = Equivalent input noise current Conversion impedance V/A

31 Amplifiers for photoconductive detectors * 7 Accessories for infrared detectors Parameter C C C Unit Applicable detector* 8 * 9 * 1 Dewar type MCT, InSb (P666 series) MCT (P3981/P275 series)* 11 PbS, PbSe - Input impedance kω Voltage gain 66 ( 2) 66 ( 2) 4 ( 1) db Frequency response (amp only, -3 db) 5 Hz to 25 khz 5 Hz to 25 khz Hz to 1 khz - Detector bias current 5 ma, 1 ma, 15 ma (3 ranges switchable).1 ma,.5 ma, 1 ma (3 ranges switchable) Internal bias - Output impedance 5 Ω Maximum output voltage (1 kω load) ±1 V Equivalent input noise voltage (f=1 khz) nv/hz 1/2 External power supply* 12 ±15 V Current consumption +1, -3 max. +1, -3 max. +15, -15 max. ma Note: Output noise voltage = Equivalent input noise voltage Voltage gain *7: Before purchasing, make sure the bias current to the detector matches the detector bias current specified in the above table. *8: These amplifiers cannot operate multiple detectors. *9: Consult us before purchasing if you want to use with a detector other than listed here. *1: Consult us before purchasing if you want to use with a multi-element detector. *11: Preamp for P /-3/-11 available upon request *12: Recommended DC power supply (analog power supply): ±15 V Current capacity: More than 1.5 times the maximum current consumption Ripple noise: 5 mvp-p or less Dimensional outlines (unit: mm, tolerance unless otherwise noted: ±1) C4159-1/-3/-4/-5/-6/-7 C pin connector pin connector Offset voltage adjusting screw PREAMPLIFIER POWER HIGH MID IN LOW OUT Gain adjusting screw BNC connector BNC connector 85 Solder leads to these terminals. Pin connections GND Cathode Anode Note: Socket for lead attachment is not provided. KIRDA49EC KIRDA46EC C5185-2/-3 4-pin connector BNC PREAMPLIFIER POWER HIGH MID IN LOW OUT Bias adjusting screw BNC connector PREAMPLIFIER POWER IN OUT Solder leads to these terminals Pin connections GND Detector Detector Note: Socket for lead attachment is not provided. KIRDA48EA Infrared detectors 26

32 Description of terms 27 Infrared detectors Dark resistance: Rd This is the resistance of a photoconductive detector (PbS, PbSe, MCT, etc.) in the dark state. Dark current: ID The dark current is the small current which flows when a reverse voltage is applied to a photovoltaic detector (InGaAs, InAs, InSb, etc.) under dark conditions. This is a factor for determining the lower limit of light detection. FOV (field of view) The field of view is related to the background radiation noise and greatly influences the value of D*. Offset voltage This is DC output voltage of an amplifier when the input signal is zero. sensitivity: S This is the detector output per watt of incident light at a given. The unit is usually expressed in V/W for photoconductive and in A/W for photovoltaic detectors. For photon drag detectors, this is represented as the output voltage with respect to incident pulsed energy of 1 kw radiated from a CO2 laser. voltaic detector (photodiode) This is a semiconductor detector that generates electrical current or voltage when light enters its PN junction. Detector materials include InGaAs, InAs, InAsSb, InSb, and MCT (HgCdTe). conductive detector This is a semiconductor detector whose conductivity increases with increasing incident light. Detector materials include PbS, PbSe, InSb and MCT (HgCdTe). : This is the at which the sensitivity of the detector is at maximum. Reverse voltage (max.): VR max, supply voltage Applying a reverse voltage to a photovoltaic detector (or applying a voltage to a photoconductive detector) triggers a breakdown at a certain voltage and causes severe deterioration of the detector performance. Therefore the absolute maximum rating for the voltage is specified at the voltage somewhat lower than this breakdown voltage. Do not apply a voltage higher than the maximum rating. Allowable current (max.) This is a maximum value of current which can be used when photoconductive detectors are operated. When the supply current is higher than the maximum allowable current, the detector performance may deteriorate, therefore, excessive current must be avoided. NEP (noise equivalent power) This is the radiant power that produces S/N of 1 at the detector output. At HAMAMATSU we list the NEP measured at the peak sensitivity (). Since the noise level is proportional to the square root of the frequency bandwidth, the NEP is normalized to a bandwidth of 1 Hz. Noise current [A/Hz 1/2 ] NEP [W/Hz 1/2 ] = sensitivity [A/W] at Cutoff frequency: fc This is the frequency at which the output decreases 3 db from the steady output level. The cutoff frequency (fc) is related to rise time (tr: time required for the output to rise from 1% to 9% of the maximum output value) as follows: tr [s] =.35 fc [Hz] Rise time: tr This is the value of a detector time response to a stepped light input, and defined as the time required for transition from 1% to 9% (or to 63%) of the maximum (constant) output value. The light sources used are GaAs LED (.92 μm), laser diode (1.3 μm), etc. Terminal capacitance: Ct An effective capacitor is formed at the PN junction of a photovoltaic detector. Its capacitance is termed the junction capacitance and is one of the parameters that determine the response speed of the photovoltaic detector. And it can cause the phenomenon of gain peaking in I-V conversion circuit using op amp. In HAMAMATSU, the terminal capacitance including this junction capacitance plus package stray capacitance is listed. Short circuit current: Isc The short circuit current is the output current which flows when the load resistance is and is nearly proportional to the device photosensitive. This is often called white light sensitivity with regards to the spectral response. This value is measured with light from a tungsten lamp of 2856 K distribution temperature (color temperature), providing 1 lx illuminance. Cutoff : λc This represents the long limit of spectral response and in datasheets is listed as the at which the sensitivity becomes 1% of the value at the peak sensitivity. Chopping frequency In the measurement of infrared detector sensitivity, an optical chopper is often used to perform on-off operation of incident light. This is the frequency of the chopper. D* (D-star: Detectivity) D* is the detectivity indicating the S/N in an AC signal obtained by a detector when radiant energy of 1 W is input to the detector. D* is normalized to a detector of 1 cm 2 and a noise bandwidth of 1 Hz, to allow comparing of characteristics of detector materials independent of the detector. D* is usually represented as D* (A, B, C), in which A is the light source temperature [K] or [μm], B is the chopping frequency [Hz], and C is the noise bandwidth [Hz]. D* is expressed in units of cm Hz 1/2 /W, and the higher the D*, the better the detector. D* is given by the following equation. S/N Δf1/2 D* = P A 1/2 where S is the signal, N is the noise, P is the incident energy in [W/cm 2 ], A is the photosensitive in [cm 2 ] and Δf is the noise bandwidth in [Hz]. The following relation is established by D* and NEP. D* = A1/2 NEP Noise: N The noise is the output voltage from a photoconductive detector operated under specified conditions and 3 K background radiations. Shunt resistance: Rsh This shunt resistance is the voltage-to-current ratio in the vicinity of V in photovoltaic detectors and defined as follows: Where ID is the dark current at reverse voltage=1 mv. 1 [mv] Rsh [Ω] = ID [A] For applications where no reverse voltage is applied, noise resulting from the shunt resistance becomes predominant. Quantum efficiency: QE The quantum efficiency is the number of electrons or holes that can be detected as a photocurrent, divided by the number of incident photons. This is commonly expressed in percent [%]. The quantum efficiency and photosensitivity S have the following relationship at a given [nm]: S 124 QE = 1 [%] λ

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35 Disclaimer Products manufactured by Hamamatsu nics K.K. (hereafter Hamamatsu ) are intended for use in general-use electronic devices (such as measurement equipment, office equipment, information communications equipment, household appliances, etc.). Unless an exception to the following is stated in the documentation of a specific product, Hamamatsu products are not to be used for special applications which demand extremely high reliability or safety (such as equipment for nuclear power control, aerospace equipment, medical equipment and transportation equipment that directly affect human life, or disaster prevention or safety equipment). Hamamatsu products should not be used in excess of their absolute maximum ratings. Attention must be paid to all documented precautions. Hamamatsu continually makes efforts to improve the quality and reliability of its products; however these efforts cannot ensure 1% compliance with the manufacturing specifications. Sufficient safety design (such as redundant safety, fire preventative, and malfunction preventative features) are to be implemented in the development of equipment manufactured with the Hamamatsu product so that personal injury, fire, or damage to public property or welfare does not occur in the unlikely event of a malfunction of the Hamamatsu product. A dangerous condition could be created if sufficient consideration is not given to safety design that addresses potential problems, especially in the design of equipment where the failure or malfunction of the Hamamatsu product within the equipment could result in bodily harm, life-threatening injury, or serious property damage during the use of the equipment. With such types of equipment, Hamamatsu shall not be responsible for the use of its products within the equipment in any way for not obtaining our written consent such as specification sheets beforehand. Appropriate descriptions of the functions, performance, and methods of operation of the Hamamatsu product and the equipment within which the Hamamatsu product is incorporated are to be provided to end-users of the equipment. All accompanying warnings and cautionary labeling are also to be provided to the end-user. Warranty of the Hamamatsu product is limited to the repair or replacement of a product in which a defect is discovered within 1 year of delivery of the product and notification is made to Hamamatsu within that period, otherwise certain warranty is specified. However, even within the warranty period Hamamatsu shall not be responsible for damages caused by either natural disaster or improper use of the product (such as modification of the product or any use that contravenes the operating conditions, intended applications, operating instructions, storage method, disposal method, or any other term or condition described in our products documents). For a complete description of the warranty associated with a particular product, please contact your regional Hamamatsu sales office. Exportation of some Hamamatsu products must comply with individual governmental regulations pertaining to export control. Export in contravention of governmental regulations is a crime and can result in severe monetary penalties or imprisonment. While we cannot give any legal advice as to how to comply with these regulations, we can help classify the goods in order to assist the buyer in determining what regulations apply. Please contact your regional Hamamatsu sales office for further assistance. In our products documents, applications are mentioned as notable examples of how the Hamamatsu product can be used. Such mentions guarantee neither the suitability of the product for specific purposes nor the success or failure of the commercial use of the product in specific applications. Some applications may be protected by patents or other proprietary rights. Hamamatsu assumes no liability for any infringing use of our products. All warranties express or implied, including any warranty of merchantability or fitness for any particular purpose are hereby excluded. Product specifications are subject to change without notification due to product improvements, etc. Our products documents have been carefully prepared to ensure the accuracy of the technical information contained herein, but in rare cases there may be errors. When using the Hamamatsu product, please be sure to request the delivery specification sheets, and confirm upon delivery that it is the most recent specifications. In addition to this document, please be sure to read any accompanying technical documentation and make note of any precautions listed in the delivery specification sheets. All Rights Reserved, transfer or duplication of the contents of our products documents without the permission of Hamamatsu is prohibited.