Selection guide - March Near infrared detectors with low noise and superb frequency characteristics HAMAMATSU PHOTONICS K.K.

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1 election guide - March 2015 InGaAs diodes Near infrared detectors with low noise and superb frequency characteristics HAMAMATU PHOTONIC K.K.

2 InGaAs diodes Based on unique, in-house compound semiconductor process technology, Hamamatsu has designed and developed advanced InGaAs photodiodes that feature high speed, high sensitivity, and low noise over a spectral range from 0.5 μm to 2.6 μm. InGaAs photodiodes are used in a wide variety of applications ranging from optical communications to chemical analysis and measurement fields. Hamamatsu provides a wide range of products in different packages including metal, ceramic and surface mount packages as well as linear and area image sensors, and infrared detector modules with built-in preamplifiers. We also manufacture custom products to meet your specific requirements. Please feel free to contact us. Topic A Hamamatsu InGaAs linear image sensor was installed in the asteroid explorer HAYABUA. The asteroid explorer HAYABUA, an unmanned spacecraft, returned to Earth after its long troublefilled journey carrying particles from the surface of the asteroid Itokawa that was nearly 300 million kilometers away from Earth at the time. The near infrared spectrometer (NIR) in the HAYABUA used a Hamamatsu InGaAs linear image sensor which is highly rated for its outstanding reliability and durability as well as high sensitivity in the near infrared region. This near infrared spectrometer is an instrument that analyzes the s of minerals on the asteroid surface and asteroid contour by detecting the light spectrum of infrared rays from the sun reflecting from the asteroid surface. Measuring this 0.8 to 2.1 μm light spectrum reflected from the surface of Itokawa showed that reflectance dropped in the vicinity of 1 μm and 2 μm, which revealed that minerals on the surface contained olivine and pyroxene. Courtesy of JAXA (Japan Aerospace Exploration Agency) Contents 1. election guide 2 pectral response range 2 Response speed 4 Packages 5 Application examples 6 2. InGaAs PIN photodiodes, InGaAs APD 8 hort- enhanced InGaAs PIN photodiodes 8 tandard InGaAs PIN photodiodes 8 Long InGaAs PIN photodiodes 10 InGaAs APD InGaAs image sensors 12 InGaAs linear image sensors 12 InGaAs area image sensors Related products 14 Two-color detectors 14 Infrared detector modules with preamp Options 16 Amplifiers for infrared detector 16 Heatsinks for detector 17 Temperature controllers 17 Multichannel detector heads Description of terms 20

3 election guide pectral response range Hamamatsu provides a wide lineup of InGaAs photodiodes with different spectral response characteristics ranging from 0.5 μm to 2.6 μm. pectral response (typical example) sensitivity (A/W) Long InGaAs (to 2.1 μm) Long InGaAs (to 1.9 μm) hort- enhanced InGaAs i photodiode 1337-BR (Typ. Ta=25 C) Long InGaAs (to 2.6 μm) 0.2 tandard InGaAs Wavelength KIRDB0477EA Cutoff temperature dependence (typical example) Ta=25 C Td=-10 C Td=-20 C tandard InGaAs (Typ.) Long InGaAs (to 2.6 μm) sensitivity (A/W) Long InGaAs (to 1.9 μm) Long InGaAs (to 2.1 μm) Wavelength KIRDB0478EA InGaAs photodiodes 2

4 InGaAs PIN photodiodes hort- enhanced G10899 series G12180 series G11193 series G8941 series 8 pectral response range Non-cooled (0.5 to 1.7 μm) Non-cooled (0.9 to 1.7 μm) tandard COB G P ROA G G6849 series 9 One-stage (0.9 to 1.67 μm) Array G7150/G G G12430 series Two-stage (0.9 to 1.65 μm) Non-cooled (0.9 to 1.9 μm) Long to 1.9 μm G12181 series to 2.1 μm G12182 series 10 One-stage (0.9 to 1.87 μm) Two-stage (0.9 to 1.85 μm) Non-cooled (0.9 to 2.1 μm) One-stage (0.9 to 2.07 μm) Two-stage (0.9 to 2.05 μm) to 2.6 μm G12183 series Non-cooled (0.9 to 2.6 μm) One-stage (0.9 to 2.57 μm) Two-stage (0.9 to 2.55 μm) InGaAs APD APD G8931 series 10 pectral response range Non-cooled (0.9 to 1.7 μm) InGaAs linear image sensors G92XX series tandard G9494 series 11 G10768 series pectral response range Non-cooled (0.9 to 1.7 μm) One-stage (0.9 to 1.67 μm) Back-illuminated Long G11135 series G11620 series to 1.85 μm G9205 series to 2.05 μm G W to 2.15 μm G /-512W to 2.25 μm G W to 2.55 μm G9208 series 12 Non-cooled (0.95 to 1.7 μm) One-stage (0.95 to1.67 μm) Two-stage (0.9 to 1.85 μm) Two-stage (0.9 to 2.05 μm) Two-stage (0.9 to 2.15 μm) Two-stage (0.9 to 2.25 μm) Two-stage (0.9 to 2.55 μm) InGaAs area image sensor G G pectral response range One-stage (0.95 to1.67 μm) tandard G One-stage (1.12 to1.87 μm) G W G W Two-stage (0.95 to1.65 μm) 3 InGaAs photodiodes

5 election guide Response speed InGaAs photodiodes with different response speeds and photosensitive areas are available to meet various applications including measurements requiring large photosensitive areas and optical communications requiring ultra-high speed. InGaAs PIN photodiodes [Cutoff frequency, sensitive area (unit: mm)] tandard hort- enhanced tandard Long COB G10899 series G12180 series G11193 series G8941 series G P ROA G Array G6849 series G7150/G G G12430 series to 1.9 μm G12181 series to 2.1 μm G12182 series to 2.6 μm G12183 series InGaAs APD [Cutoff frequency, sensitive area (unit: mm)] APD G8931 series 10 InGaAs area image sensors [Frame rate, Number of pixels] G G G G W G W *3: Integration time 1 μs Cutoff frequency (MHz) G10 G ϕ3 ϕ2 ϕ1 ϕ0.5 ϕ0.3 ϕ5,3,2 ϕ1 ϕ0.5 ϕ0.3 ϕ2/4-element ϕ1 ϕ0.5 ϕ ϕ3,2,1 ϕ0.5 ϕ0.3 ϕ3,2,1 ϕ0.5 ϕ0.3 ϕ3,2,1 ϕ0.5 ϕ0.3 ϕ1/4-element InGaAs linear image sensors [Line rate, Number of pixels] tandard Back-illuminated Long G92XX series G9494 series G10768 series G11135 series G11620 series to 1.85 μm G9205 series to 2.05 μm G W to 2.15 μm G /-512W to 2.25 μm G W to 2.55 μm G9208 series *1: When the integration time is set to the minimum value. *2: When two video lines are used for readout, the line rate is equal to that for 256 channels ch ϕ0.3 ϕ0.2 ϕ0.3 Cutoff frequency (MHz) G10 G ch ch ϕ0.08 ϕ0.2 ϕ0.04 ϕ0.03 Line rate (lines/s)* ch* ch 512 ch* ch 512 ch* ch 512 ch* ch Frame rate (frames/s)* ch ch 256 ch 256 ch 512 ch* ch 512 ch 256 ch 1024 ch 512 ch 256 ch 128 ch InGaAs photodiodes 4

6 Packages A wide variety of packages are provided ranging from surface mount s to highly reliable metal s. InGaAs PIN photodiodes Metal One-stage Two-stage Ceramic Non-cooled hort- enhanced G10899 series G12180 series tandard Long G11193 series ROA G G6849 series 9 urface mount G8941 series 6 COB G P 7 Array G7150/G G G12430 series 12 to 1.9 μm G12181 series to 2.1 μm G12182 series to 2.6 μm G12183 series InGaAs APD Non-cooled APD G8931 series Metal One-stage Two-stage Ceramic urface mount InGaAs linear image sensors tandard Back-illuminated Long Non-cooled Metal One-stage Two-stage Ceramic G92XX series G9494 series G10768 series 16 G11135 series G11620 series to 1.85 μm G9205 series 14 to 2.05 μm G W to 2.15 μm G /-512W 14 to 2.25 μm G W 14 to 2.55 μm G9208 series InGaAs area image sensors Metal One-stage Two-stage Non-cooled G G tandard G W G G W 22 Ceramic InGaAs photodiodes

7 election guide Application examples Here are some typical applications of Hamamatsu InGaAs photodiodes. InGaAs PIN photodiodes Radiation thermometer Moisture meter Gas analysis pectrophotometry Laser monitor DWDM monitor Optical power meter hort- enhanced G10899 series 8 G12180 series Optical Distance communication measurement G11193 series G8941 series COB G P tandard Long ROA G G6849 series G7150/G Array G G12430 series to 1.9 μm G12181 series to 2.1 μm G12182 series 10 to 2.6 μm G12183 series InGaAs APD Radiation thermometer Moisture meter Gas analysis pectrophotometry Laser monitor DWDM monitor Optical power meter Optical Distance communication measurement APD G8931 series 10 InGaAs linear image sensors tandard Multichannel spectrophotometry Thermometer Nondestructive inspection Foreign object screening DWDM monitor OCT Optical spectrum analyzer G92XX series G9494 series 11 G10768 series Back-illuminated G11135 series G11620 series to 1.85 μm G9205 series Long to 2.05 μm G W 12 to 2.15 μm G /-512W to 2.25 μm G W to 2.55 μm G9208 series InGaAs area image sensors Hyperspectral imaging Thermal image monitor Laser beam profiler Near infrared image detection Foreign object screening G G tandard G G W G W InGaAs photodiodes 6

8 Application examples of InGaAs photodiodes Induction heating Optical power meter Optical fiber InGaAs PIN photodiode InGaAs PIN photodiode KIRDC0095EA InGaAs PIN photodiode detects the temperature at the bottom of a frying pan. KIRDC0100EA InGaAs PIN photodiode is used to detect the level of near infrared light passing through an optical fiber, etc. Mini-spectrometer Rangefinder InGaAs APD Focusing lens Transmission grating Collimating lens InGaAs linear image sensor Entrance slit KIRDC0097EA InGaAs linear image sensor is used in some of our mini-spectrometers. KIRDC0098EA InGaAs APD detects the distance to an object with high speed and accuracy. Grain sorter Hyperspectral imaging InGaAs linear image sensor Light source CCD InGaAs area image senser Light source pectroscopy imaging pray nozzle Unwanted grains Good grains Optical spectrum measurement KIRDC0099EA Grain sorters irradiate light onto the falling grains and detect the transmitted light to sort out unwanted grains from good ones. (InGaAs linear image sensor detects near infrared light, and CCD detects visible light.) KIRDC0124EA A hyperspectral image of the ground environment is to be obtained by using an InGaAs area image sensor from a helicopter, etc. 7 InGaAs photodiodes

9 InGaAs PIN photodiodes, InGaAs APD hort- enhanced InGaAs PIN photodiodes pectral response range 0.5 μm 1.0 μm 1.5 μm 2.0 μm 2.5 μm The G10899 series is an InGaAs PIN photodiode that covers a wide spectral response range from 0.5 μm to 1.7 μm. While standard InGaAs PIN photodiodes have spectral response ranging from 0.9 μm to 1.7 μm, the G10899 series has sensitivity extending to 0.5 μm on the shorter side. A wide spectral range can be detected with a single detector. Features Applications Wide spectral response range Low noise, low dark current Large photosensitive area available pectrophotometry Radiation thermometers pectral Peak sensitivity Cutoff Dark current sensitive response sensitivity frequency Type no. Cooling area range fc VR=1 V p =0.65 μm =p VR=1 V (mm) (A/W) (A/W) (na) (MHz) G K ϕ G K ϕ G K Non-cooled ϕ1 0.5 to G K ϕ G K ϕ Package TO-18 TO-5 (Typ. Ta=25 C) Option (sold separately) tandard InGaAs PIN photodiodes pectral response range 0.5 μm 1.0 μm 1.5 μm 2.0 μm 2.5 μm InGaAs PIN photodiodes have large shunt resistance and low noise. A wide variety of packages are available including highly reliable metal s and surface mount s. Features Low noise, low dark current Various photosensitive areas available Metal package Applications Laser monitor Optical measurement instruments Optical communications pectral Peak sensitivity Dark current Cutoff Cooling sensitive response sensitivity frequency Type no. (measurement area range =p VR=1 V fc condition) p (mm) (A/W) (na) (MHz) G A ϕ * (VR=5 V) G A ϕ * (VR=5 V) G A ϕ1 0.8* 1 60 (VR=5 V) G A ϕ (VR=1 V) G A ϕ (VR=1 V) Package G A Non-cooled ϕ5 5 3 (VR=1 V) TO to (Ta=25 C) G * 3 ϕ (VR=1 V) TO-18 G * 3 ϕ2 5 4 (VR=1 V) TO-5 G * 3 ϕ (VR=1 V) 1.55 G * 3 ϕ5 25* (VR=0 V) TO-8 G A ϕ (VR=1 V) One-stage G A ϕ (VR=1 V) 0.9 to1.67 G A (Td* 2 ϕ3 1 7 (VR=1 V) =-10 C) G A ϕ (VR=1 V) G A ϕ (VR=1 V) Two-stage 0.95 G A ϕ (VR=1 V) 0.9 to 1.65 G A ϕ (VR=1 V) (Td=-20 C) G A ϕ (VR=1 V) Non-cooled G ϕ to * (Ta=25 C) (VR=5 V) *1: VR=5 V *2: Element temperature *3: Low PDL (polarization dependence loss) *4: VR=0.1 V TO-18 TO-5 TO-8 TO-18 with CD lens (Typ.) Option (sold separately) A3179 C A C InGaAs photodiodes 8

10 Ceramic package Type no. sensitive area (mm) pectral response range Peak sensitivity p sensitivity =p (A/W) Dark current VR=5 V (na) Cutoff frequency fc VR=5 V (MHz) Package (Typ. Ta=25 C) G ϕ (VR=10 mv) 0.1 (VR=0 V) - G R ϕ to G R ϕ urface mount 1.55 G ϕ G ϕ to urface mount G ϕ COB (chip on board) package Type no. sensitive area (mm) pectral response range Peak sensitivity p sensitivity =p (A/W) Dark current VR=5 V (na) Cutoff frequency fc VR=5 V (MHz) G P ϕ to Package urface mount (Ultra-compact ) (Typ. Ta=25 C) diode arrays Type no. sensitive area (mm) pectral response range Peak sensitivity p sensitivity =1.55 μm (A/W) Dark current per element (na) Cutoff frequency fc VR=1 V (MHz) Package (Typ. Ta=25 C) G6849 G ϕ2 (quadrant) ϕ1 (quadrant) 0.5 (VR=1 V) 0.15 (VR=1 V) TO-5 G ( 16-element) 5 (VR=1 V) 30 G G G D ( 16-element) ϕ0.08 ( 40-element) ( 16-element) 0.9 to (VR=1 V) 0.02 (VR=5 V) 0.5 (VR=1 V) (VR=5 V) 30 Ceramic G D ( 32-element) 0.25 (VR=1 V) 60 G D ( 46-element) 0.25 (VR=1 V) 60 9 InGaAs photodiodes

11 ROA Type no. Wavelength band Responsivity R (A/W) Data rate (Gbps) Minimum receivable sensitivity Pmin (dbm) Maximum receivable sensitivity Pmax (dbm) InGaAs PIN photodiodes, InGaAs APD (Typ. Ta=25 C, Vcc=3.3 V, unless otherwise noted) Transimpedance Tz (kω) Optical return loss ORL min. (db) G to (ingle end) 12 Pigtail/receptacle (InGaAs PIN photodiodes with preamp) Type no. G G G sensitivity (V/mW) Cutoff frequency fc (GHz) Minimum receivable sensitivity Pmin (dbm) Maximum receivable sensitivity Pmax (dbm) min. Transimpedance Tz (kω) 1.8 (single end) (Typ. Ta=25 C, Vcc=3.3 V, unless otherwise noted) Optical return loss ORL min. (db) Package FC board receptacle FC panel receptacle Pigtail coaxial C G Pigtail coaxial FC Pigtail/receptacle (InGaAs PIN photodiodes) Type no. G pectral response range Peak sensitivity p sensitivity =1.55 μm (A/W) Dark current VR=5 V (pa) Cutoff frequency fc VR=5 V (GHz) (Typ. Ta=25 C, unless otherwise noted) Package Pigtail coaxial C G Pigtail coaxial FC 0.9 to G FC board receptacle G FC panel receptacle Long InGaAs PIN photodiodes pectral response range 0.5 μm 1.0 μm 1.5 μm 2.0 μm 2.5 μm These are InGaAs PIN photodiodes whose spectral response range extends up to 2.6 μm. Three groups are available with different peak sensitivity s of 1.75 μm, 1.95 μm, and 2.3 μm. Thermoelectrically cooled, low noise s are also available. Peak sensitivity 1.75 μm pectral Peak Cutoff sensitivity Dark current Cooling sensitive response sensitivity frequency Type no. (measurement area range fc =p VR=0.5 V condition) p VR=0 V (mm) (A/W) (na) (MHz) G K ϕ G K ϕ Non-cooled G K ϕ1 0.9 to (Ta=25 C) G K ϕ G K ϕ G K ϕ G K One-stage ϕ G K ϕ1 0.9 to G K (Td=-10 C) ϕ G K ϕ G K ϕ G K Two-stage ϕ G K ϕ1 0.9 to G K (Td=-20 C) ϕ G K ϕ Package TO-18 TO-5 TO-8 TO-8 (Typ.) Option (sold separately) A3179 C A C InGaAs photodiodes 10

12 Peak sensitivity 1.95 μm pectral Peak Cutoff sensitivity Dark current Cooling sensitive response sensitivity frequency Type no. (measurement area range fc =p VR=0.5 V condition) p VR=0 V (mm) (A/W) (na) (MHz) G K ϕ G K ϕ Non-cooled G K ϕ1 0.9 to (Ta=25 C) G K ϕ G K ϕ G K ϕ G K One-stage ϕ G K ϕ1 0.9 to G K (Td=-10 C) ϕ G K ϕ G K ϕ G K Two-stage ϕ G K ϕ1 0.9 to G K (Td=-20 C) ϕ G K ϕ Package TO-18 TO-5 TO-8 TO-8 (Typ.) Option (sold separately) A3179 C A C Peak sensitivity 2.3 μm pectral Peak Cutoff sensitivity Dark current Cooling sensitive response sensitivity frequency Type no. (measurement area range fc =p VR=0.5 V condition) p VR=0 V (mm) (A/W) (μa) (MHz) G K ϕ G K ϕ Non-cooled G K ϕ1 0.9 to (Ta=25 C) G K ϕ G K ϕ G K ϕ G K One-stage ϕ G K ϕ1 0.9 to G K (Td=-10 C) ϕ2 3 2 G K ϕ G K ϕ G K Two-stage ϕ G K ϕ1 0.9 to G K (Td=-20 C) ϕ G K ϕ3 6 1 Package TO-18 TO-5 TO-8 TO-8 (Typ.) Option (sold separately) A3179 C A C InGaAs APD pectral response range 0.5 μm 1.0 μm 1.5 μm 2.0 μm 2.5 μm These are InGaAs APDs designed for distance measurement, FO, low-light-detection, and optical communication, etc. The G of large photosensitive area ϕ0.2 mm is also available. (Typ. Ta=25 C) Type no. Cooling sensitive area (mm) pectral response range Peak sensitivity p sensitivity =1.55 μm M=1 (A/W) Dark current VR=VBR 0.9 (na) Cutoff frequency fc M=10 (GHz) G ϕ Non-cooled 0.95 to G ϕ Package TO InGaAs photodiodes

13 InGaAs image sensors InGaAs linear image sensors InGaAs linear image sensors are comprised of an InGaAs photodiode array with high sensitivity in the near infrared region, charge amplifier arrays, an offset compensation circuit, a shift register, and a timing generator. The signal from each pixel is read out in charge integration mode. The G11135/G11620 series use a back-illuminated structure to allow signal readout from a single video line. tandard Type no. Cooling (measurement condition) Pixel pitch Number of pixels sensitive area pectral response range sensitivity =p (A/W) pectral response range 0.5 μm 1.0 μm 1.5 μm 2.0 μm 2.5 μm (Typ. unless otherwise noted) Dark current Ta=25 C (pa) Defective pixels max. (%) Applicable driver circuit (sold separately) (mm mm) G One-stage to 1.67 C G (Td=-10 C) G D Non-cooled (Ta=25 C) 0.9 to One-stage G to C (Td=-10 C) G D Non-cooled (Ta=25 C) 0.9 to One-stage G to 1.67 C (Td=-10 C) G One-stage G to G (Td=-10 C) G C G D Non-cooled 0.9 to (Ta=25 C) G D C10820 G D Non-cooled G DB (Td=25 C) to ±1 1 C10854 Back-illuminated These linear image sensors use a back-illuminated InGaAs photodiode array that is bump-connected to a CMO-ROIC with a single output terminal. pectral response range 0.5 μm 1.0 μm 1.5 μm 2.0 μm 2.5 μm (Typ., unless otherwise noted) pectral sensitivity Applicable Dark current Defective Pixel sensitive response Number pixels Type no. Cooling pitch area range driver circuit of pixels Ta=25 C max. =p (sold separately) (mm mm) (A/W) (pa) (%) G DD G DE ±0.2 C11514 G DA G DA Non-cooled to 1.7 G DA C G DF ±0.5 G A One-stage to G A (Td=-10 C) InGaAs photodiodes 12

14 Long pectral sensitivity Dark current Defective Cooling Pixel Number sensitive response pixels Type no. (measurement pitch of area range max. condition) pixels =p Td=-20 C (mm mm) (A/W) (pa) (%) G W to G W G W 0.9 to Two-stage G to G W to (Td=-20 C) G W 0.9 to G W 0.9 to G W to pectral response range 0.5 μm 1.0 μm 1.5 μm 2.0 μm 2.5 μm (Typ., unless otherwise noted) Applicable driver circuit (sold separately) C InGaAs area image sensors pectral response range 0.5 μm 1.0 μm 1.5 μm 2.0 μm 2.5 μm InGaAs area image sensors have a hybrid structure consisting of a CMO readout circuit (ROIC: readout integrated circuit) and a back-illuminated InGaAs photodiode area array. (Typ., unless otherwise noted) Type no. Cooling (measurement condition) Pixel pitch Number of pixels sensitive area (mm mm) pectral response range sensitivity =p (A/W) Dark current Td=25 C (pa) Defective pixels max. (%) Applicable driver circuit (sold separately) G C11512 One-stage 0.95 to (Td=25 C) G C G One-stage (Td=0 C) to (Td=0 C) 1 C11512 G W Two-stage (Td=15 C) to (Td=15 C) C G W C InGaAs photodiodes

15 Related products Two-color detectors Two-color detectors use a combination of two light sensors with different spectral response, in which one sensor is mounted over the other sensor along the same optical axis to provide a broad spectral response range. As the combination of two light sensors, an infrared-transmitting i photodiode and an InGaAs PIN photodiode (standard or long ) or an infrared-transmitting InGaAs PIN photodiode (standard ) and an InGaAs PIN photodiode (long ) are available. Thermoelectrically cooled two-color detectors are also provided that cool the sensors to maintain their temperatures constant, allowing high precision measurement with an improved /N. Features Wide spectral response range imultaneously detects light of multiple s in the same optical path High /N (One-stage ) K K K Type no. K K K K K K K K K *1: VR=0 V, RL=50 Ω Cooling (measurement condition) Non-cooled (Ta=25 C) One-stage (Td=-10 C) Non-cooled (Ta=25 C) Applications pectrophotometers Radiation thermometer Flame monitor Laser monitor Detector sensitive area (mm) pectral response range Peak sensitivity p sensitivity =p (A/W) Cutoff frequency fc VR=0 V RL=1 kω (MHz) Package Option (sold separately) i to 1.7 InGaAs ϕ i C to 2.6 InGaAs ϕ * 1 TO-5 i to 1.7 InGaAs ϕ InGaAs * to 2.55 InGaAs ϕ * 1 i to 1.67 InGaAs ϕ C9329 i to 2.57 TO-8 InGaAs ϕ A i C to 1.67 InGaAs ϕ i * to InGaAs ϕ * 1 Ceramic InGaAs * to InGaAs ϕ * 1 (Typ.) InGaAs photodiodes 14

16 Infrared detector modules with preamps These are infrared detector modules using an InGaAs PIN photodiode and a preamp integrated into a compact case. Thermoelectrically cooled s and liquid nitrogen cooled s are provided for applications requiring low noise. Custom products are also available with different spectral response ranges, time response characteristics, and gains. Features Easy to use Just connecting it to a DC power supply provides a voltage output that varies with the incident light level. Compact size Low noise, high sensitivity (, liquid nitrogen cooled ) Type no. Detector G6121 G Cooling (measurement condition) Non-cooled (Ta=25 C) sensitive area (mm) Applications Various infrared detections Cutoff c Peak sensitivity p sensitivity =p (V/W) ϕ (Typ.) C G K ϕ C G K (Td=-15 C) ϕ C G A ϕ G G (chip) ϕ Liquid nitrogen (Td=-196 C) G G (chip) ϕ InGaAs photodiodes

17 Options A variety of options are provided to facilitate using InGaAs photodiodes. Connection example * 1 Power supply (±15 V) detector* 3 Heatsink for detector A3179 series * 2 POWER OUT Amplifier for infrared detector Measurement instrument Power suppy (100 V, 115 V, 230 V) ûc Temperature controller C KIRDC0101EB Cable no. Cable Approx. length Note Coaxial cable (for signal, no connector) 2 m upplied with heatsink A3179 series. When using this cable, make it as short as possible (preferably about 10 cm). 4-conductor cable (with a connector) upplied with temperature controller C m A This cable is also sold separately. 4-conductor cable (with a connector) A m This cable is supplied with the amplifier for infrared detector, and infrared detector modules with preamps (non-cooled ). This cable is also sold separately. Besides this cable, the A , which is a 6-conductor cable (with connector) supplied with infrared detector module with preamp (non-cooled ), is also sold separately. BNC connector cable E m Option Power supply cable(for temperature controller) 1.9 m upplied with temperature controller C *1: Attach the bare wire end to a 3-pin or 4-pin connector or to a banana plug, and then connect them to the power supply. *2: oldering is needed. When using the C5185 series amplifier, a BNC connector (prepared by the user, example: one end of the E2573) is required. *3: No socket is available. oldering is needed. Amplifier for infrared detectors For InGaAs PIN photodiode The is a low noise amplifier for InGaAs PIN photodiodes. Features Low noise 3 ranges switchable pecification Accessories Instruction manual Power cable A (one end with 4-pin connector for connection to amplifier and the other end unterminated, 2 m) (Typ.) Parameter Condition pecification Unit Applicable detector* 4 * 5 InGaAs - Conversion impedance 10 7, 10 6, 10 5 (3 ranges switchable) V/A Frequency response Amp only, -3 db DC to 15 khz - Output impedance 50 Ω Maximum output voltage 1 kω load +10 V Output offset voltage ±5 mv Equivalent input noise current f=1 khz 2.5 pa/hz 1/2 Reverse voltage Can be applied from external unit - External power supply* 6 ±15 V Current consumption ±15 max. ma Note: A power supply is needed to use this amplifier. *4: These amplifiers cannot operate multiple detectors. *5: Consult us before purchasing if you want to use with a detector other than listed here. *6: Recommended DC power supply (analog power supply): ±15 V Current capacity: more than 1.5 times the maximum current consumption Ripple noise: 5 mvp-p or less InGaAs photodiodes 16

18 Heatsinks for detectors For InGaAs PIN photodiode and two-color detector The A3179 series heatsinks are designed specifically for thermoelectrically cooled infrared detectors. When used at an ambient temperature of 25 C, the A3179 and A provide a temperature difference (ΔT) of about 35 C and the A provides a temperature difference (ΔT) of about 45 C. Features A3179: for one-stage A : for two-stage A : for two-color detector K3413 series Compact size Accessories Instruction manual 4-conductor cable (2 m): for TE-cooler and thermistor* 1 * 2 Coaxial cable (2 m): for signal* 1 Note: *1: When used in combination with the C temperature controller, do not use the 4-conductor cable supplied with the A3179 series, but use the 4-conductor cable A (sold separately, with a connector). *2: No socket is supplied for connection to infrared detectors. Connect infrared detectors by soldering. Cover the soldered joints and detector pins with vinyl insulating tubes. A Temperature controller For InGaAs PIN photodiode The C is a temperature controller designed for infrared detectors. The C allows temperature setting for the TE-cooler mounted in an infrared detector. Accessories Instruction manual 4-conductor cable A (with a connector, 3 m): for TE-cooler and thermistor* 3 Power supply cable pecifications Parameter pecification Applicable detector* 4 One-stage /two-stage InGaAs PIN photodiode etting element temperature -30 to +20 C Temperature stability within ±0.1 C Output current for temperature control 1.1 A min., 1.2 A typ., 1.3 A max. Power supply 100 V ± 10% 50/60 Hz* 5 Power consumption 30 W Dimensions 107 (W) 84 (H) 190 (D) mm Weight Approx. 1.9 kg *3: When used in combination with the A3179 series heatsink, do not use an 4-conductor cable supplied with the A3179 series, but use the A instead. *4: This temperature controller does not support infrared detector modules with preamps and cannot set temperatures on two or more TE-coolers. *5: Please specify power supply requirement (AC line voltage) from among 100 V, 115 V and 230 V when ordering. 17 InGaAs photodiodes

19 Options Multichannel detector heads For InGaAs image sensor Multichannel detector heads for InGaAs linear image sensor (one-stage/two-stage TE- cooled ) C8061/C The C and C are multichannel detector heads designed for use with an InGaAs linear image sensor developed for near infrared spectrophotometry. These detector heads contain a driver circuit that operates from input of simple external signals. When used in combination with the C multichannel detector head controller and the supplied software, these multichannel detector heads can be controlled from a PC and easily acquire data. Features Built-in driver circuit for InGaAs linear image sensor C : for one-stage C : for two-stage Highly stable temperature controller Cooling temperature (Ta=10 to 30 C) fixed at Td=-10 ± 0.1 C (C ), -20 ± 0.1 C (C ) imple signal input operation Compact size Applications Near infrared multichannel spectroscopy Radiation thermometer Non-destructive inspection Optical fiber transmittance measurement Type no. Output Applicable sensor (sold separately) C C Analog G9201/G9203/G9211/G , G9202/G9204/G9212/G G9205/G9206/G9207/G W, G G9205/G9206/G W Multichannel detector head controller Type no. Interface Applicable multichannel detector head (sold separately) C UB 2.0 C , C Connection example hutter* timing pulse AC cable (100 to 240 V; included with C ) Trig. Dedicated cable (included with C ) POWER IGNAL I/O TE CONTROL I/O UB cable (included with C ) Image sensor + Multichannel detector head C PC [Windows 7 (32-bit, 64-bit), 8 (64-bit), 8.1 (64-bit)] (UB 2.0) * hutter, etc. are not available KACCC0402EE InGaAs photodiodes 18

20 Multichannel detector head for InGaAs linear image sensor (G10768 series) C10854 The C10854 is a multichannel detector head designed for applications such as sorting machines and D-OCT (spectral domain optical coherence tomography) where high-speed response is essential. The C10854 is optimized for use with the G10768 series InGaAs linear image sensors and controllable from a PC by using the supplied application software (DCam-CL) that runs on Windows 7 (32-bit, 64-bit). Features High-speed operation: 5 MHz Line rate: khz upports CameraLink Applications Near infrared multichannel spectroscopy Foreign object screening OCT (optical coherence tomography) Type no. Interface Output Applicable sensor (sold separately) C10854 CameraLink Digital G D, G DB Multichannel detector heads for InGaAs area image sensors (G11097 series) C11512 series The C11512 series is a multichannel detector head designed for the G11097 series InGaAs area image sensors. The C11512 series supports a variety of near infrared imaging applications and is controllable from a PC by using the supplied application software (DCam-CL) that runs on Windows 7 (32-bit, 64-bit). Features Built-in temperature control circuit [Td=10 C typ. (Ta=25 C)] upports CameraLink Compact size External trigger input Adjustable offset and gain Pulse output setting Applications Thermal imaging Laser beam profiler Foreign object inspection Type no. Interface Output Applicable sensor (sold separately) C11512 G CameraLink Digital C G InGaAs photodiodes

21 Description of terms pectral response The relation (photoelectric sensitivity) between the incident light level and resulting photocurrent differs depending on the of the incident light. This relation between the photoelectric sensitivity and is referred to as the spectral response characteristic and is expressed in terms of photosensitivity or quantum efficiency. sensitivity: The ratio of photocurrent expressed in amperes (A) or output voltage expressed in volts (V) to the incident light level expressed in watts (W). sensitivity is represented as an absolute sensitivity (A/W or V/W) or as a relative sensitivity (%) to the peak sensitivity normalized to 100. We usually define the spectral response range as the range in which the relative sensitivity is higher than 5% or 10% of the peak sensitivity. Quantum efficiency: QE This is the number of electrons or holes that can be extracted as photocurrent divided by the number of incident photons. It is commonly expressed in percent (%). The quantum efficiency QE and photosensitivity (unit: A/W) have the following relationship at a given (unit: nm). hort circuit current: Isc This is the output current that flows in a photodiode when load resistance is zero. This is called "white light sensitivity" to differentiate it from the spectral response, and is measured with light from a standard tungsten lamp at 2856 K distribution temperature (color temperature). Our product catalog lists the short circuit current measured under an illuminance of 100 lx. Peak sensitivity : p This is the at which the photosensitivity of the detector is at maximum. Cutoff : c This represents the long limit of spectral response and in datasheets is listed as the at which the sensitivity becomes 10% of the value at the peak sensitivity. Dark current: A small current which flows when a reverse voltage is applied to a photodiode even in a dark state. This current is called the dark current. Noise resulting from dark current becomes dominant when a reverse voltage is applied to photodiodes (PIN photodiodes, etc.). hunt resistance: Rsh This is the voltage/current ratio of a photodiode operated in the vicinity of 0 V. In our product catalog, the shunt resistance is specified by the following equation, where the dark current () is a value measured at a reverse voltage of 10 mv. Noise generated from the shunt resistance becomes dominant in applications where a reverse voltage is not applied to the photodiode. Terminal capacitance: Ct In a photodiode, the PN junction can be considered as a of capacitor. This capacitance is termed the junction capacitance and is an important parameter in determining the response speed. In current-to-voltage conversion circuits using an op amp, the junction capacitance might cause gain peaking. At HAMAMATU, we specify the terminal capacitance including this junction capacitance plus the package stray capacitance. Rise time: tr The rise time is the time required for the output to rise from 10% to 90% of the maximum output value (steady-state value) in response to input of step-function light. Cutoff frequency: fc This is the measure used to evaluate the time response of high-speed PIN photodiodes to a sinewave-modulated light input. It is defined as the frequency at which the photodiode output decreases by 3 db from the output at 100 khz. The light source used is a laser diode (1.3 μm or 1,55 μm) and the load resistance is 50 Ω. The rise time tr has a relation with the cutoff frequency fc as follows: 0.35 tr [s]= fc [Hz] Noise equivalent power: NEP NEP is the incident light level equivalent to the noise level of a device. In other words, it is the light level required to obtain a signal-to-noise ratio (/N) of 1. We define the NEP value at the peak sensitivity (p). ince the noise level is proportional to the square root of the frequency bandwidth, the bandwidth is normalized to 1 Hz. Reverse voltage: VR max Applying a reverse voltage to a photodiode triggers a breakdown at a certain voltage and causes severe deterioration of the device performance. Therefore the absolute maximum rating is specified for reverse voltage at the voltage somewhat lower than this breakdown voltage. The reverse voltage shall not exceed the maximum rating, even instantaneously. Reference (Physical constants relating to light and opto-semiconductors) Constant ymbol Numerical value Unit Electron charge q C peed of light in vacuum c m/s Planck's constant h J s Boltzmann's constant k J/K Thermal energy at room temperature kt (300 K) ev Energy of 1eV ev J Wavelength equivalent to 1 ev in vacuum nm Permittivity of vacuum εo F/m Band gap energy of silicon Eg Approx (25 C) ev InGaAs photodiodes 20

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23 Disclaimer Products manufactured by Hamamatsu nics K.K. (hereafter Hamamatsu ) are intended for use in general-use electronic devices (such as measurement equipment, office equipment, information communications equipment, household appliances, etc.). Unless an exception to the following is stated in the documentation of a specific product, Hamamatsu products are not to be used for special applications which demand extremely high reliability or safety (such as equipment for nuclear power control, aerospace equipment, medical equipment and transportation equipment that directly affect human life, or disaster prevention or safety equipment). Hamamatsu products should not be used in excess of their absolute maximum ratings. Attention must be paid to all documented precautions. Hamamatsu continually makes efforts to improve the quality and reliability of its products; however these efforts cannot ensure 100% compliance with the manufacturing specifications. ufficient safety design (such as redundant safety, fire preventative, and malfunction preventative features) are to be implemented in the development of equipment manufactured with the Hamamatsu product so that personal injury, fire, or damage to public property or welfare does not occur in the unlikely event of a malfunction of the Hamamatsu product. A dangerous condition could be created if sufficient consideration is not given to safety design that addresses potential problems, especially in the design of equipment where the failure or malfunction of the Hamamatsu product within the equipment could result in bodily harm, life-threatening injury, or serious property damage during the use of the equipment. With such s of equipment, Hamamatsu shall not be responsible for the use of its products within the equipment in any way for not obtaining our written consent such as specification sheets beforehand. Appropriate descriptions of the functions, performance, and methods of operation of the Hamamatsu product and the equipment within which the Hamamatsu product is incorporated are to be provided to end-users of the equipment. All accompanying warnings and cautionary labeling are also to be provided to the end-user. Warranty of the Hamamatsu product is limited to the repair or replacement of a product in which a defect is discovered within 1 year of delivery of the product and notification is made to Hamamatsu within that period, otherwise certain warranty is specified. However, even within the warranty period Hamamatsu shall not be responsible for damages caused by either natural disaster or improper use of the product (such as modification of the product or any use that contravenes the operating conditions, intended applications, operating instructions, storage method, disposal method, or any other term or condition described in our products documents). For a complete description of the warranty associated with a particular product, please contact your regional Hamamatsu sales office. Exportation of some Hamamatsu products must comply with individual governmental regulations pertaining to export control. Export in contravention of governmental regulations is a crime and can result in severe monetary penalties or imprisonment. While we cannot give any legal advice as to how to comply with these regulations, we can help classify the goods in order to assist the buyer in determining what regulations apply. Please contact your regional Hamamatsu sales office for further assistance. In our products documents, applications are mentioned as notable examples of how the Hamamatsu product can be used. uch mentions guarantee neither the suitability of the product for specific purposes nor the success or failure of the commercial use of the product in specific applications. ome applications may be protected by patents or other proprietary rights. Hamamatsu assumes no liability for any infringing use of our products. All warranties express or implied, including any warranty of merchantability or fitness for any particular purpose are hereby excluded. Product specifications are subject to change without notification due to product improvements, etc. Our products documents have been carefully prepared to ensure the accuracy of the technical information contained herein, but in rare cases there may be errors. When using the Hamamatsu product, please be sure to request the delivery specification sheets, and confirm upon delivery that it is the most recent specifications. In addition to this document, please be sure to read any accompanying technical documentation and make note of any precautions listed in the delivery specification sheets. All Rights Reserved, transfer or duplication of the contents of our products documents without the permission of Hamamatsu is prohibited.

24 HAMAMATU PHOTONIC K.K., olid tate Division , Ichino-cho, Higashi-ku, Hamamatsu City, , Japan Telephone: (81) , Fax: (81) Main Products i photodiodes APD MPPC IC Image sensors PD Infrared detectors LED Optical communication devices Automotive devices X-ray flat panel sensors Mini-spectrometers Opto-semiconductor modules Hamamatsu also supplies: electric tubes Imaging tubes Light sources Imaging and processing systems Information in this catalogue is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. pecifications are subject to change without notice. No patent rights are granted to any of the circuits described herein Hamamatsu nics K.K. Quality, technology, and service are part of every product. ales Offices Japan: HAMAMATU PHOTONIC K.K , unayama-cho, Naka-ku, Hamamatsu City, hizuoka Pref , Japan Telephone: (81) , Fax: (81) intl-div@hq.hpk.co.jp China: HAMAMATU PHOTONIC (CHINA) Co., Ltd. Main Office 1201 Tower B, Jiaming Center, 27 Dongsanhuan Beilu, Chaoyang District, Beijing, China Telephone: (86) , Fax: (86) hpc@hamamatsu.com.cn hanghai Branch 4905 Wheelock quare, 1717 Nanjing Road West, Jingan District, hanghai, China Telephone: (86) , Fax: (86) U..A.: HAMAMATU CORPORATION Main Office 360 Foothill Road, Bridgewater, NJ 08807, U..A. Telephone: (1) , Fax: (1) usa@hamamatsu.com California Office 2875 Moorpark Ave. an Jose, CA 95128, U..A. Telephone: (1) , Fax: (1) usa@hamamatsu.com Chicago Office 4711 Golf Road, uite 805, kokie, IL 60076, U..A. Telephone: (1) , Fax: (1) usa@hamamatsu.com Boston Office 20 Park Plaza, uite 312, Boston, MA 02116, U..A. Telephone: (1) , Fax: (1) usa@hamamatsu.com United Kingdom: HAMAMATU PHOTONIC UK Limited Main Office 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, UK Telephone: (44) , Fax: (44) info@hamamatsu.co.uk outh Africa Office: PO Box 1112, Buccleuch 2066, Johannesburg, outh Africa Telephone/Fax: (27) France, Portugal, Belgium, witzerland, pain: HAMAMATU PHOTONIC FRANCE.A.R.L. Main Office 19, Rue du aule Trapu Parc du Moulin de Massy, Massy Cedex, France Telephone: (33) Fax: (33) infos@hamamatsu.fr wiss Office Dornacherplatz olothurn, witzerland Telephone: (41) , Fax: (41) swiss@hamamatsu.ch Belgian Office Axisparc Technology, rue Andre Dumont Mont-aint-Guibert, Belgium Telephone: (32) Fax: (32) info@hamamatsu.be panish Office C. Argenters, 4 edif 2 Parque Tecnológico del Vallés Cerdanyola (Barcelona), pain Telephone: (34) Fax: (34) infospain@hamamatsu.es Germany, Denmark, The Netherlands, Poland: HAMAMATU PHOTONIC DEUTCHLAND GmbH. Main Office Arzbergerstr. 10, D Herrsching am Ammersee, Germany Telephone: (49) , Fax: (49) info@hamamatsu.de Danish Office Lautruphøj 1-3, DK-2750 Ballerup, Denmark Telephone: (45) , Fax: (45) info@hamamatsu.dk Netherlands Office Televisieweg 2, NL-1322 AC Almere, The Netherlands Telephone: (31) , Fax: (31) info@hamamatsu.nl Poland Office Warsaw, 8 t. A. Boboli tr., Poland Telephone: (48) , Fax: (48) poland@hamamatsu.de North Europe and CI: HAMAMATU PHOTONIC NORDEN AB Main Office Torshamnsgatan Kista, weden Telephone: (46) , Fax: (46) info@hamamatsu.se Russian Office 11, Christoprudny Boulevard, Building 1, Office 114, , Moscow, Russia Telephone: (7) , Fax: (7) info@hamamatsu.ru Italy: HAMAMATU PHOTONIC ITALIA.r.l. Main Office trada della Moia, 1 int. 6, Arese (Milano), Italy Telephone: (39) , Fax: (39) info@hamamatsu.it Rome Office Viale Cesare Pavese, 435, Roma, Italy Telephone: (39) , Fax: (39) inforoma@hamamatsu.it Cat. No. KIRD0005E02 Mar DN Printed in Japan (2,000)