New Products and Projects

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Owen Stone
8 years ago
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1 New Products and Projects 2013

2 Editorial We keep you informed More than 10 years of research and development in the field of cutting-edge silicon radiation detectors lead to the success and high performance of PNDetector s and PNSensor s products and projects. Highlights of recent years are: Market leadership in EDX detectors for microanalysis due to the excellent quality of our Silicon Drift Detectors (SDDs with integrated FET, large solid angle, best energy resolution, optimum light element performance and high throughput capacity). Award Winner for the most innovative product for a TEM application (custom specific ultrafast EDX solution). Various publications in Nature on measurements with our pnccds which are the largest parallel-readout CCD sensors for Free Electron Laser (FEL) applications available. Advanced solutions for a wide variety of synchrotron applications with our portfolio of large area detectors. Successful integration of focal plane X-ray imaging detectors based on DEPFET Active Pixel Sensor for ESA s Mercury mission BepiColombo. Content New silicon detector fabrication line PND & PNS introduce their own advanced clean room for silicon detector fabrication, mounting and testing. Next generation SDD plus Series The next generation SDDs minimizes the gap to the theoretical measurement limit. Planar Thin Windows PND presents their new Planar Thin Window technology for the housing of the detector modules. Robust SDD Module PND offers now a Robust SDD Module for harsh environmental requirements. SPEEDY BSE Detector The BSE Detector features strongly increased collection efficiency and real TV speed imaging capability. The extra large detector SDD field (600 mm2) has been designed for synchrotron applications. The pnccd Cameras PNS offers compact pnccd systems for e. g. XRF imaging or as directly converting device for single electron detection in a TEM. July 2013

Highlights of recent years are: Market leadership in EDX detectors for microanalysis due to the excellent quality of our Silicon Drift Detectors (SDDs with integrated FET, large solid angle, best

3 New silicon detector fabrication line New silicon detector fabrication line Phase 2 PNDetector is expanding PNDetector s new clean room will be a worldwide unique facility dedicated to the fabrication of state-of-the-art silicon detectors of highest quality. The clean room design is optimized to permit a continuous and efficient production flow from the raw material, 6-8 inch FZ silicon wafers of highest purity level, to the finalized product. The fully equipped clean room will include various areas of dedicated semiconductor fabrication as well as modern packaging facilities and laboratories for test and qualification, divided in different zones of clean room classes The facilities are situated on the Siemens technology campus in Munich, Germany. The construction and qualification will take place in two phases: In Phase 1 a clean room of 400 m2 will be built up for the fabrication and qualification of double sided, high resolution spectroscopic detectors and imagers. In Phase 2 the clean room will be expanded to 600 m2 by new testing and mounting laboratories featuring highest quality standard and advanced equipment. Phase 1 Status The clean room construction started in April 2013 and will be finished in September The first production of qualification devices will start in January Its successful completion will be celebrated in a Grand Opening in Summer to SDD Chips, PTWs, pin diodes, pnccds We are aiming for: Best performance Optimized throughput Reliability & quality control Flexibility & efficiency Custom specific solutions Advanced technologies Modern equipment Sophisticated designs to Detector Modules 4 5 from Silicon wafers

The clean room design is optimized to permit a continuous and efficient production flow from the raw material, 6-8 inch FZ silicon wafers of highest purity level, to the finalized product.

4 Next generation SDD plus Series Next generation SDD plus Series High-resolution, high-throughput EDX applications require de tec tors with extremely low input capacitance, providing optimum detector performance at very short processing times. Here, significant progress has been made by remodeling the geometry of the anode and of the integrated FET with the goal of reducing all parasitic capacitances related to the detector anode. This led to a new generation of SDD detectors the so-called SDD plus Series. The low capacitance anode/fet can be adopted to all SDD types (round or droplet shape) and sizes (from 10 and 30 mm 2 up to 100 mm 2 or multichannel devices). The SDD plus detectors possess the best spectroscopic performance at short shaping times and are suited for all types of applications where ultimate energy resolution is required and where high spectral resolution at high speed is mandatory. As the size of the FET and of the collecting anode is optimized with respect to minimum input capacitance, the SDD plus devices show improved spectroscopic performance for all detector areas. When applied to the SD3 droplet devices, the optimized FET technology leads to spectroscopic performance at the theoretical Fano limit. Mn-Kα [ev] Standard FET μs Shaping time [µs] SDD plus FET SD3 10 mm 2 SD3 plus 10 mm 2 This is especially beneficial at shorter shaping times (122 1µs and µs for a 10 mm 2 droplet SDD plus device) and for the detection of X-rays in the light element energy range (38 C_K and B_K). Lithium K-line (54 ev) is also detected. Number of counts Number of counts Energy [ev] C-K line Energy [ev] eee e 6 7 Sensor Description Module Design Performance Parameter Standard plus SDD plus pnW PTW SDD plus FET round housing typ. 127 ev FWHM 10.0 mm 2 x 450 μm outer diameter 15 MnK, -20 C, kcps round shape design Ø 3.2 mm Zr collimator typ. 135 ev FWHM polysilicon technology 1-stage Peltier MnK, -20 C, 300 kcps pnwindow Planar Thin Window typ. 55 ev FWHM C_K, -20 C, 10 kcps P/B typ. MnK SDD plus pnW UTW SL SDD plus FET round housing typ. 127 ev FWHM 30.0 mm 2 x 450 μm outer diameter 15 MnK, -30 C, kcps round shape design Ø 5.8 mm Zr collimator typ. 55 ev FWHM pnwindow thin polymere window P/B typ. MnK SDD plus pnW UTW SL SDD plus FET round housing typ. 128 ev FWHM 60.0 mm 2 x 450 μm outer diameter 17.5 MnK, -30 C, kcps round shape design Ø 8.15 mm Zr collimator typ. 58 ev FWHM pnwindow thin polymere window P/B typ. MnK SDD plus pnW UTW USL SDD plus FET round housing typ. 129 ev FWHM mm 2 x 450 μm outer diameter 18.5 MnK, -30 C, kcps round shape design Ø 10.5 mm Zr collimator typ. 62 ev FWHM pnwindow thin polymere window P/B typ. MnK High resolution plus SD3 plus pnW UTW SL SDD plus FET round housing typ. 122 ev FWHM 10.0 mm 2 x 450 μm outer diameter 15 MnK, -30 C, kcps droplet design Ø 3.1 mm Zr collimator typ. 127 ev FWHM polysilicon technology 2-stage Peltier MnK, -30 C, 300 kcps pnwindow thin polymere window typ. 42 ev C_K, -30 C, 10 kcps P/B typ. MnK SD3 plus pnW UTW SL SDD plus FET round housing typ. 124 ev FWHM 30.0 mm 2 x 450 μm outer diameter 15 MnK, -30 C, kcps droplet design Ø 5.8 mm Zr collimator typ. 128 ev FWHM polysilicon technology 2-stage Peltier MnK, -30 C, 300 kcps pnwindow thin polymere window typ. 45 ev C_K, -30 C, 10 kcps P/B typ. MnK Robust SEM/XRF SEM/TEM SEM/XRF SEM/XRF SEM SEM/TEM

Here, significant progress has been made by remodeling the geometry of the anode and of the integrated FET with the goal of reducing all parasitic capacitances related to the detector anode.

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Silicon Drift Detector Product Brochure Update 2013

Silicon Drift Detector Product Brochure Update 2013 Content Classic Silicon Drift Detector High Resolution Silicon Drift Detector Multielement Silicon Detector Extra Large Detector Series July 2013 About