N-Channel Depletion-Mode Vertical DMOS FETs Features High input impedance Low input capacitance Fast switching speeds Low on-resistance Free from secondary breakdown Low input and output leakage pplications Normally-on switches Solid state relays Converters Linear amplifiers Constant current sources Power supply circuits Telecom General Description The Supertex DN2535 is a low threshold depletion mode (normally-on) transistor utilizing an advanced vertical DMOS structure and Supertex s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Supertex s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Ordering Information Device TO-92 Package Options TO-22 BV DSX /BV DGX (V) R DS(ON) (max) (Ω) DN2535 DN2535N3-G DN2535N5-G 35 25 15 -G indicates package is RoHS compliant ( Green ) Pin Configurations DRIN I DSS (min) bsolute Maximum Ratings Parameter Drain-to-source voltage Drain-to-gate voltage Value BV DSX BV DGX Gate-to-source voltage ±2V Operating and storage temperature -55 O C to +15 O C Soldering temperature* 3 O C bsolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied. Continuous operation of the device at the absolute rating level may affect device reliability. ll voltages are referenced to device ground. * Distance of 1.6mm from case for 1 seconds. DRIN SOURCE Product Marking DN2535N5 LLLLLLLLL YYWW GTE 3-Lead TO-92 (N3) D N 2 5 3 5 Y Y W W YY = Year Sealed WW = Week Sealed = Green Packaging 3-Lead TO-92 (N3) GTE L = Lot Number YY = Year Sealed WW = Week Sealed = Green Packaging 3-Lead TO-22 (N5) SOURCE DRIN 3-Lead TO-22 (N5) 1235 Bordeaux Drive, Sunnyvale, C 9489 Tel: 48-222-8888 www.supertex.com
Thermal Characteristics Package I D (continuous) I D (pulsed) Power Dissipation @T C = 25 O C (W) θ jc ( O C/W) θ ja ( O C/W) DN2535 TO-92 12 5 1. 125 17 12 5 TO-22 5 5 15 8.3 7 5 5 Notes: I D (continuous) is limited by max rated T j. Electrical Characteristics (T = 25O C unless otherwise specified) Sym Parameter Min Typ Max Units Conditions BV DSX Drain-to-source breakdown voltage 35 - - V V GS = -5.V, I D = 1µ V GS(OFF) Gate-to-source off voltage -1.5 - -3.5 V V DS = 25V, I D = 1µ ΔV GS(OFF) Change in V GS(OFF) with temperature - - -4.5 mv/ O C V DS = 25V, I D = 1µ I GSS Gate body leakage current - - 1 n V GS = ±2V, V DS = V I D(OFF) Drain-to-source leakage current I DR I DRM - - 1 µ V DS = Max rating, V GS = -1V - - 1. m V DS =.8 Max Rating, V GS = -1V, T = 125 O C I DSS Saturated drain-to-source current 15 - - m V GS = V, V DS = 25V R DS(ON) Static drain-to-source on-state resistance - 17 25 Ω V GS = V, I D = 12m ΔR DS(ON) Change in R DS(ON) with temperature - - 1.1 %/ O C V GS = V, I D = 12m G FS Forward transconductance - 325 - mmho V DS = 1V, I D = 1m C ISS Input capacitance - 2 3 C OSS Common source output capacitance - 12 3 C RSS Reverse transfer capacitance - 1. 5. t d(on) Turn-on delay time - - 1 t r Rise time - - 15 t d(off) Turn-off delay time - - 15 Notes: 1. 2. t f Fall time - - 2 pf ns V GS = -1V, V DS = 25V, f = 1.MHz V DD = 25V, I D = 15m, R GEN = 25Ω, V SD Diode forward voltage drop - - 1.8 V V GS = -1V, I SD = 12m t rr Reverse recovery time - 8 - ns V GS = -1V, I SD = 1. ll D.C. parameters 1% tested at 25 O C unless otherwise stated. (Pulse test: 3µs pulse, 2% duty cycle.) ll.c. parameters sample tested. Switching Waveforms and Test Circuit INPUT V -1V 1% 9% PULSE GENERTOR V DD R L OUTPUT t (ON) t (OFF) R GEN t d(on) t r t d(off) t F OUTPUT V DD 1% 1% INPUT D.U.T. V 9% 9% 1235 Bordeaux Drive, Sunnyvale, C 9489 Tel: 48-222-8888 www.supertex.com 2
Typical Performance Curves Output Characteristics Saturation Characteristics.5.4 V GS = 1.V.5V 25 2 V GS = 1.V.5V V I D (amperes ).3.2 V I D (milliamps ) 15 1 -.5V.1 -.5V 5 8 16 24 32 4 V DS (volts) -1.V 1 2 3 4 5 V DS (volts) -1.V Transconductance vs. Drain Current Power Dissipation vs. mbient Temperature.5 V DS = 1V 2.4 T = -55 C TO-22 G F S (siemens ).3.2 T = 25 C T = 125 C P D (watts ) 1.1 5 1 15 2 25 I D (milliamps) ( T = 2 5 C ) TO-92 25 5 75 1 125 15 T C ( C) Maximum Rated Safe Operating rea Thermal Response Characteristics 1 1. TO-92/TO-22 (pulsed) I D (amperes ).1.1 (T = 25 C) TO-22 (DC) TO-92 (DC) (normalized) R esistance T hermal.8.6.4.2 TO-22 T C = 25 C P D = 15W TO-92 T C = 25 C P D = 1.W.1 T C = 25 C 1 1 1 1 V DS (volts).1.1.1 1 1 t p (seconds) 1235 Bordeaux Drive, Sunnyvale, C 9489 Tel: 48-222-8888 www.supertex.com 3
Typical Performance Curves (cont.) 1.1 BV DSS Variation with Temperature 1 On-Resistance vs. Drain Current 1.5 V GS = -5V 8 V GS = V B V D S S Normalize d 1..95 R D S (on ) (Ohms ) 6 4.9 2-5 5 1 15 8 16 24 32 4 T j ( C) I D (milliamps).4 Transfer Characteristics T = -55 C 2.5 V GS(off) and R DS Variation with Temperature.32 V DS = 1V T = 25 C 2 R DS (ON) @ I D = 12m I D (amperes ).24.16 T = 125 C Normalized 1.5 1 V GS(OFF) @ 1 µ.8.5-3 2-1 1 2 V GS (Volts) -5 5 1 15 T j ( C) 2 Capacitance Vs. Drain-to-Source Voltage Gate Drive Dynamic Characteristics C ISS 15 (P icofarads) C 15 1 V GS = -1V V G S (V olts ) 1 5 2pF V DS = 2V 5 V DS = 4V C C OSS RSS 1 2 3 4 V DS (Volts) -5 17pF.4.8 1.2 1.6 2. Q C (Nanocoulombs) 1235 Bordeaux Drive, Sunnyvale, C 9489 Tel: 48-222-8888 www.supertex.com 4
3-Lead TO-92 Package Outline (L/LL/N3) D Seating Plane 1 2 3 L b e1 e Front View c Side View E1 1 3 E 2 Bottom View Dimensions (inches) Symbol b c D E E1 e e1 L MIN.17.14.14.175.125.8.95.45.5 NOM - - - - - - - - - MX.21.22.22.25.165.15.15.55.61* JEDEC Registration TO-92. * This dimension is not specified in the original JEDEC drawing. The value listed is for reference only. This dimension is a non-jedec dimension. Drawings not to scale. Supertex Doc.#: DSPD-3TO92N3, Version D848. 1235 Bordeaux Drive, Sunnyvale, C 9489 Tel: 48-222-8888 www.supertex.com 5
3-Lead TO-22 Package Outline (N5) E2 E ΦP Seating Plane 1 E Thermal Pad Q H1 D 4 D2 D1 Chamfer Optional 1 2 3 E1 View B L 2 e c Front View Side View View - 1 2 3 L1 b2 View B b Symbol 1 2 b b2 c D D1 D2 E E1 E2 e H1 L L1 Q ΦP Dimension (inches) MIN.14.2.8.15.45.12.56.326.474.38.27.2*.23.5.2*.1.139 NOM - - -.27.57 - - - - - - -.1 BSC - - - - - MX.19.55.12.4.7.24.65.361.57.42.35.3.27.58.25.135.161 JEDEC Registration TO-22, Variation B, Issue K, pril 22. * This dimension is not specified in the original JEDEC drawing. The value listed is for reference only. This dimension is a non-jedec dimension. Drawings not to scale. Supertex Doc. #: DSPD-3TO22N5, Version B938. (The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline information go to http://www.supertex.com/packaging.html.) Supertex inc. does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such applications unless it receives an adequate product liability indemnification insurance agreement. Supertex inc. does not assume responsibility for use of devices described, and limits its liability to the replacement of the devices determined defective due to workmanship. No responsibility is assumed for possible omissions and inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications refer to the Supertex inc. website: http//www.supertex.com. 28 ll rights reserved. Unauthorized use or reproduction is prohibited. Doc.# DSFP-DN2535 B1318 6 1235 Bordeaux Drive, Sunnyvale, C 9489 Tel: 48-222-8888 www.supertex.com