Si53ADY N- and P-Channel 3 V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) ( ) I D (A) N-Channel 3.53 at V GS = V.9.75 at V GS =.5 V. P-Channel - 3. at V GS = - V - 3.9.35 at V GS = -.5 V - 3. FEATURES Halogen-free According to IEC 9-- Available TrenchFET Power MOSFETs % R g Tested Compliant to RoHS Directive /95/EC SO- D S S D G 7 D S 3 D G 5 D G G Top View Ordering Information: Si53ADY-T-E3 (Lead (Pb-free) Si53ADY-T-GE3 (Lead (Pb-free and Halogen-free) S N-Channel MOSFET D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (T A = 5 C, unless otherwise noted) N-Channel P-Channel Parameter Symbol s Steady State s Steady State Unit Drain-Source Voltage V DS 3-3 Gate-Source Voltage V GS ± ± V Continuous Drain Current (T J = 5 C) a T A = 5 C.9 3.7-3.9-3. I D T A = 7 C 3.9.9-3. -. A Pulsed Drain Current I DM Continuous Source Current (Diode Conduction) a I S.7.9 -.7 -. T A = 5 C Maximum Power Dissipation a.3. P D T A = 7 C.3.73.3.7 W Operating Junction and Storage Temperature Range T J, T stg - 55 to 5 C THERMAL RESISTANCE RATINGS N-Channel P-Channel Parameter Symbol Typ. Max. Typ. Max. Maximum Junction-to-Ambient a t s 55.5 5.5 R thja Steady State 9 7 5 Maximum Junction-to-Foot (Drain) Steady State R thjf 5 3 5 Note: a. Surface mounted on " x " FR board. Unit C/W Document Number: 733 S-9-Rev. D, -Sep- THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?9
Si53ADY SPECIFICATIONS T J = 5 C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit Static V DS = V GS, I D = 5 µa N-Ch Gate Threshold Voltage V GS(th) V DS = V GS, I D = - 5 µa P-Ch - V DS = V, V GS = ± V N-Ch ± Gate-Body Leakage I GSS V DS = V, V GS = ± V P-Ch ± Zero Gate Voltage Drain Current On-State Drain Current a I DSS I D(on) Notes: a. Pulse test; pulse width 3 µs, duty cycle %. b. Guaranteed by design, not subject to production testing. V DS = 3 V, V GS = V N-Ch V DS = - 3 V, V GS = V P-Ch - V DS = 3 V, V GS = V, T J = 55 C N-Ch 5 V DS = - 3 V, V GS = V, T J = 55 C P-Ch - 5 V DS 5 V, V GS = V N-Ch V DS - 5 V, V GS = - V P-Ch - V GS = V, I D =.9 A N-Ch..53 V GS = - V, I D = - 3.9 A Drain-Source On-State Resistance a P-Ch.. R DS(on) V GS =.5 V, I D =. A N-Ch..75 V GS = -.5 V, I D = - 3 A P-Ch.5.35 V DS = 5 V, I D =.9 A Forward Transconductance a N-Ch g fs V DS = - 5 V, I D = -.5 A P-Ch 5 I S =.7 A, V GS = V Diode Forward Voltage a N-Ch.. V SD I S = -.7 A, V GS = V P-Ch -. -. Dynamic b N-Ch Total Gate Charge Q g N-Channel P-Ch V DS = V, V GS = V, I D =.9 A N-Ch. Gate-Source Charge Q gs P-Ch P-Channel V DS = - V, V GS = - V, I D = - 3.9 A N-Ch. Gate-Drain Charge Q gd P-Ch.9 Gate Resistancee R g f = MHz N-Ch.. 3. P-Ch.5. N-Ch Turn-On Delay Time t d(on) N-Channel P-Ch 5 V DD = V, R L = N-Ch Rise Time t r I D A, V GEN = V, R g = P-Ch 9 Turn-Off Delay Time Fall Time t d(off) t f P-Channel V DD = - V, R L = N-Ch P-Ch 3 5 I D - A, V GEN = - V, R g = N-Ch 5 P-Ch I F =.7 A, di/dt = A/µs N-Ch 5 Source-Drain Reverse Recovery Time t rr I F = -.7 A, di/dt = A/µs P-Ch 7 V na µa A S V nc ns Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Document Number: 733 S-9-Rev. D, -Sep- THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?9
Si53ADY N-CHANNEL TYPICAL CHARACTERISTICS (5 C, unless otherwise noted) V GS = V thru 5 V V - Drain Current (A) - Drain Current (A) I D 3 V I D T C = 5 C 5 C - 55 C..5..5..5 3. 3.5. V DS - Drain-to-Source Voltage (V) Output Characteristics 3 5 V GS - Gate-to-Source Voltage (V) Transfer Characteristics.5 R DS(on) - On-Resistance ( )..9..3 V GS =.5 V V GS = V C - Capacitance (pf) 5 3 C oss C iss. I D - Drain Current (A) On-Resistance vs. Drain Current C rss 3 V DS - Drain-to-Source Voltage (V) Capacitance. - Gate-to-Source Voltage (V) V DS = V I D =.9 A (Normalized) - On-Resistance.... V GS = V I D =.9 A V GS R DS(on). Q g - Total Gate Charge (nc). - 5-5 5 5 75 5 5 T J - Junction Temperature ( C) Gate Charge On-Resistance vs. Junction Temperature Document Number: 733 S-9-Rev. D, -Sep- 3 THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?9
Si53ADY N-CHANNEL TYPICAL CHARACTERISTICS (5 C, unless otherwise noted).5 - Source Current (A) I S T J = 5 C T J = 5 C R DS(on) -..9..3 I D =.9 A....... V SD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage. V GS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage. 3. Variance (V) V GS(th). -. -. I D = 5 µa Power (W) -. -. - 5-5 5 5 75 5 5 T J - Temperature ( C) -3 - - Time (s) Threshold Voltage Single Pulse Power Normalized Effective Transient Thermal Impedance Duty Cycle =.5. Notes:.. P DM.5 t t. t. Duty Cycle, D = t. Per Unit Base = R thja = 9 C/W 3. T JM - T A = P DM Z thja (t) Single Pulse. Surface Mounted. - -3 - - Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient Document Number: 733 S-9-Rev. D, -Sep- THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?9
Si53ADY N-CHANNEL TYPICAL CHARACTERISTICS (5 C, unless otherwise noted) Normalized Effective Transient Thermal Impedance. Duty Cycle =.5...5.. - Single Pulse -3 - Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot - P-CHANNEL TYPICAL CHARACTERISTICS (5 C, unless otherwise noted) V GS = V thru V T C = - 55 C I D - Drain Current (A) 5 V V I D - Drain Current (A) 5 C 5 C V 3 V V DS - Drain-to-Source Voltage (V) Output Characteristics 3 5 7 V GS - Gate-to-Source Voltage (V) Transfer Characteristics.3 R DS(on) - On-Resistance ( ).... V GS =.5 V V GS = V C - Capacitance (pf) C oss C iss. 3 9 5 I D - Drain Current (A) On-Resistance vs. Drain Current C rss 3 V DS - Drain-to-Source Voltage (V) Capacitance Document Number: 733 S-9-Rev. D, -Sep- 5 THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?9
Si53ADY P-CHANNEL TYPICAL CHARACTERISTICS (5 C, unless otherwise noted). - Gate-to-Source Voltage (V) V DS = V I D = 3.9 A - On-Resistance (Normalized).... V GS = V I D = 3.9 A V GS R DS(on). Q g - Total Gate Charge (nc). - 5-5 5 5 75 5 5 T J - Junction Temperature ( C) Gate Charge On-Resistance vs. Junction Temperature 3. - Source Current (A) I S T J = 5 C T J = 5 C R DS(on) - On-Resistance ( ).3... I D = 3.9 A.3..9..5 V SD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage. V GS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage. 3. I D = 5 µa Variance (V) V GS(th)... Power (W) -. -. - 5-5 5 5 75 5 5 T J - Temperature ( C) Threshold Voltage - - Time (s) Single Pulse Power, Junction-to-Ambient Document Number: 733 S-9-Rev. D, -Sep- THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?9
Si53ADY P-CHANNEL TYPICAL CHARACTERISTICS (5 C, unless otherwise noted) Normalized Effective Transient Thermal Impedance Duty Cycle =.5. Notes:.. P DM.5 t t t.. Duty Cycle, D = t. Per Unit Base = R thja = 7 C/W 3. T JM - T A = P DM Z thja (t) Single Pulse. Surface Mounted. - -3 - - Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance. Duty Cycle =.5....5. - Single Pulse -3 - Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot - maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see /ppg?733. Document Number: 733 S-9-Rev. D, -Sep- 7 THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?9
Package Information SOIC (NARROW): -LEAD JEDEC Part Number: MS- 7 5 E H 3 S D A.5 mm (Gage Plane) h x 5 C All Leads e B A L q. mm." MILLIMETERS INCHES DIM Min Max Min Max A.35.75.53.9 A.... B.35.5.. C.9.5.75. D. 5..9.9 E 3...5.57 e.7 BSC.5 BSC H 5.... h.5.5.. L.5.93..37 q S.... ECN: C-57-Rev. I, -Sep- DWG: 59 Document Number: 79 -Sep-
Application Note RECOMMENDED MINIMUM PADS FOR SO-.7 (.39). (.7) APPLICATION NOTE.7 (.9). (.).5 (3.). (.559).5 (.7) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index Document Number: 7 Revision: -Jan-
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