FULLY PROTECTED POWER MOSFET SWITCH

FULLY PROTECTED POWER MOSFET SWITCH General Descripion: Raing Summary: Provisional Daa Shee No.PD-6.0027A The IRSF3010 is a hree erminal monolihic SMART POWER MOSFET wih buil in shor circui, over-emperaure, ESD and over-volage proecions. The on chip proecion circui laches off he POWER MOSFET in case he drain curren exceeds 14A (ypical) or he juncion emperaure exceeds 165 C (ypical) and keeps i off unil he inpu is driven low. The drain o source volage is acively clamped a 55V (ypical), prior o he avalanche of POWER MOSFET, hus improving is performance during urn off wih inducive loads. The inpu curren requiremens are very low (300uA) which makes he IRSF3010 compaible wih mos exising designs based on sandard POWER MOSFETs. Applicaions: n n DC Moor Drive Solenoid Driver V ds(clamp) 50 V R ds(on) 80 mω I ds(sd) 11 A T j(sd) 155 C E AS 400 mj Feaures: n Exremely Rugged for Harsh Operaing Environmens n Over Temperaure Proecion n Over Curren Proecion n Acive Drain o Source Clamp n ESD Proecion n Compaible wih sandard POWER MOSFET n Low Operaing Inpu Curren n Monolihic Consrucion n Dual se/rese Threshold Inpu Drain Tab Pin Assignmen Pin 1 - Inpu Pin 2 - Drain Pin 3 - Source Tab - Drain IRSF3010 3 2 1 IRSF3010S IRSF3010 - Block Diagram Source Available Packages

Absolue Maximum Raings Absolue Maximum Raings indicae susained limis beyond which damage o he device may occur. (Tc = 25 C unless oherwise specified.) Symbol Parameer Definiion Min. Max. Unis Tes Condiions 2 Vds, max Coninuous Drain o Source Volage 50 Vin, max Coninuous Inpu Volage -0.3 10 Ids Coninuous Drain Curren self limied Pd Power Dissipaion 40 W Tc 25 C Linear Deraing Facor for Tc > 25 C 0.33 W/ C EAS Unclamped Single Pulse Inducive Energy 400 mj Vesd1 Elecrosaic Discharge Volage (Human Body Model) 4000 V 1000pF. 1.5kΩ Vesd2 (Machine Model) 1000 200pF, 0Ω T Jop Juncion Temperaure -55 self-limied T Sg Sorage Temperaure -55 175 o C T L Lead Temperaure (Soldering, 10 seconds) 300 Saic Elecrical Characerisics (Tc = 25 C unless oherwise specified.) Symbol Parameer Definiion Min. Typ. Max. Unis Tes Condiions Vds,clamp Drain o Source Clamp Volage 50 54 Ids = 10mA V 56 62 Ids = 11A, p = 700 µs Rds(on) Drain o Source On Resisance 70 80, Ids = 4A 85 mω Vin = 4V, Ids = 4A Thermal Characerisics 53 Vin = 10V, Ids = 4A Idss Drain o Source Leakage Curren 10 Vds = 12V, Vin = 0V 100 µa Vds = 50V, Vin = 0V V 10 250 Vds=40V,Vin=0V,Tc=150 o C Vh Inpu Threshold Volage 1.5 2.0 2.5 V Vds = 5V, Ids = 1mA Ii, on Inpu Supply Curren (Normal Operaion) 0.25 0.6 0.35 0.85 Vin = 10V ma Ii, off Inpu Supply Curren (Proecion Mode) 0.5 1.0 0.6 1.2 Vin = 10V Vin, clamp Inpu Clamp Volage 10 10.8 Iin = 10mA V Vsd Body-Drain Diode Forward Drop ➁ 1.2 1.5 Ids = -17A, Rin = 1kΩ Symbol Parameer Definiion Min. Typ. Max. Unis Tes Condiions RΘjc Thermal Resisance, Juncion o Case 3.0 C/W RΘjA Thermal Resisance, Juncion o Ambien 60 C/W

Swiching Elecrical Characerisics: (Vcc = 14V, Resisive Load RL = 5Ω, Tc = 25 C.) Please refer o Figure 15 for swiching ime definiions. Symbol Parameer Definiion Min. Typ. Max. Unis Tes Condiions don Turn-On Delay ime 425 650 Temperaure Coefficiens of Elecrical Characerisics: (Please see Figures 3 hrough 14 for more daa on hermal characerisics of oher elecrical parameers. Symbol Parameer Definiion Min. Typ. Max. Unis Tes Condiions Vds,clamp Temperaure Coefficien of Drain o Source Vh Vin,clamp Ids(sd) Clamp Volage 18.2 Temperaure Coefficien of Inpu Threshold Volage -3.2 Temperaure Coefficien of Inpu Clamp Volage 7.0 Temperaure Coefficien of Over-Curren 150 Vin = 10V r Rise Time 2000 4000 425 Vin = 10V ns doff Turn-Off Delay ime 650 1000 850 Vin = 10V f Fall Time 500 800 Proecion Characerisics: (Tc = 25 C unless oherwise specified.) 450 Vin = 10V Symbol Parameer Definiion Min. Typ. Max. Unis Tes Condiions Ids(sd) Over-Curren Shudown Threshold 11 14 17 A Tj(sd) Over Temperaure Shudown Threshold 155 165 C, Ids = 2A Vproec Minimum Inpu Volage for Over-emp fxn. 3 V Iresp Over Curren Response Time 2 See figure 16 for definiion µs Iblank Over Curren Blanking Time 3 See figure 16 for definiion Ipeak Peak Shor Circui Curren 20 A See figure 16 for definiion Vrese Proecion Rese Volage 1.3 V rese Proecion Rese Time 7 See figure 17 for definiion µs Tresp OverTemperaure Response Time 12 See figure 18 for definiion mv/ o C Shudown Threshold -21.5 ma/ o C Ids = 10mA Vds = 5V, Ids = 1mA Iin = 10mA Noes: 1. EAS is esed wih a consan curren source of 11A applied for 700µS wih Vin = OV and saring T j = 25 o C. 2. Inpu curren mus be limied o less han 5mA wih a 1kΩ resisor in series wih he inpu when he Body-Drain Diode is forward biased. 3

Rds(on) (mohm) 120 110 100 90 80 70 60 50 40 T = 25 C Vin = 4V Vin = 7V Vin = 10V 2 4 6 8 10 12 14 16 18 Ids (A) Fig. 3 - On Resisance vs Drain o Source Curren Rds(on) (mohm) 120 Ids = 4A 110 100 90 80 70 60 50 Vin = 10V 40 30-50 -25 0 25 50 75 100 125 150 Temperaure ( C) Fig. 4 - On Resisance vs. Temperaure 17 16 Shu Down Curren (A) 16 15 14 T = 25 C Shu Down Curren (A) 15 14 13 12 11 13 4 5 6 7 8 9 10 Inpu Volage (Vols) Fig. 5 - Over-curren Shudown Threshold vs Inpu Volage 1.6 10-50 -25 0 25 50 75 100 125 150 Temperaure ( C) Fig. 6 - Over-curren Shudown Threshold vs Temperaure 3500 Inpu Curren (ma) 4 1.4 1.2 0.8 0.6 0.4 0.2 1 T=25 C Iin,off 0 0 1 2 3 4 5 6 7 8 9 10 11 Inpu Volage (Vols) Iin,on Figure 7 - Inpu Curren vs. Inpu Volage Single Pulse Energy o Failure (mj) 3000 2500 2000 1500 1000 500 Raing Ids = 12A Ids = 8A 0 0 25 50 75 100 125 150 Saring Juncion Temperaure ( C) Vdd = 25V Fig. 8 - Unclamped Single Pulse Inducive Energy o Failure vs Saring Juncion Temperaure

2.50 2.50 T = 25 C Rise T ime, On Delay (µs) 2.00 1.50 1.00 0.50 On Delay Rise Time Rise Time, On Delay (µs) 2.00 1.50 1.00 0.50 Rise Time On Delay 0.00 3 4 5 6 7 8 9 10 11 Inpu Volage (Vols) 0.00-50 -25 0 25 50 75 100 125 150 Temperaure ( C) Fig. 9 - Turn on characerisics vs Inpu Volage Fig. 10 - Turn on characerisics vs Temperaure Fall Time, Off Delay (µs) 0.9 0.8 0.7 0.6 0.5 0.4 T = 25 C Off Delay Fall Time Fall Time, Off Delay (µs) 0.9 0.8 0.7 0.6 0.5 0.4 Off Delay Fall Time 0.3 3 4 5 6 7 8 9 10 11 Inpu Volage (Vols) 0.3-50 -25 0 25 50 75 100 125 150 Temperaure ( C) Fig. 11 - Turn off characerisics vs Inpu Volage Fig. 12 - Turn off characerisics vs Temperaure 100 10 Reverse Drain Curren (A) 10 T = 150 C T = 25 C T hermal Response ( C/W) 1 0.1 Duy Facor = 0.5 0.1 0 DF= 0.50 0.20 0.10 0.05 0.02 0.01 0.00 1 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 Source o Drain Volage (Vols) 0.01 1E-05 1E-04 1E-03 1E-02 1E-01 1E+00 1E+01 Pulse Duraion p (S) Fig. 13 - Source-Drain Diode Forward Volage Fig. 14 - Transien Thermal Impedance, Juncion o Case 5

V in V in = 0 R L Vcc = 14V 5V 50% V ds I ds 90% I peak 10% don r doff f Fig. 15 - Definiion of Swiching imes. Iblank Iresp Shor applied Shor applied before urn-on afer urn-on Fig. 16 - Definiion of Ipeak, Iblank, Iresp V in V in 5V 5V I ds < rese > rese I ds I ds(sd) Tresp = 1 mh R L Vcc = 14V R L = 10 Ω Vcc = 14V T J = T JSD + 5 C Fig. 17 - Definiion of rese Fig. 18 - Definiion of Tresp 6

Case Ouline TO-220AB (IRSF3010) NOTES: 1. Dimensioning and olerancing per ANSI Y14.5M, 1982 2. Conrolling dimension: INCH 3. Dimensions shown are in millimeers (inches) 4. Conforms o JEDEC ouline TO-251AA 5. Dimension does no include solder dip. Solder dip max. +0.16 (.006) LEAD ASSIGNMENTS 1. Gae 2. Drain 3. Source 4. Drain 7

Case Ouline SMD-220 (IRSF3010S) 8

Tape and Reel SMD-220 (IRSF3010S) 9

Applicaion Informaion Inroducion Proeced monolihic POWER MOSFETs offer simple, cos effecive soluions in applicaions where exreme operaing condiions can occur. The margin beween he operaing condiions and he absolue maximum values can be narrowed resuling in beer uilizaion of he device and lower cos. ESD proecion also reduces he off-circui failures during handling and assembly. General Descripion The IRSF3010 is a fully proeced monolihic N-channel, logic level POWER MOSFET wih 80mΩ (max) on-resisance. The buil-in proecions include overcurren, over-emperaure, ESD and acive over-volage proecions. The over-curren and over-emperaure proecion makes he IRSF3010 indesrucible a any load condiions in swiching or in linear applicaions. The buil-in ESD proecion minimizes he risk of ESD damage when he device is off-circui. The IRSF3010 is fully characerized for avalanche operaion and can be used for fas de-energizaion of inducive loads. The IRSF3010 Inelligen Power Swich ha is available in he TO220 package offers an easy upgrade from non-proeced devices. Block Diagram The zener diode beween he inpu and he source (see figure 20) provides he ESD proecion for he inpu and also limis he applicable volage o he inpu o 10V. The R-S flip-flop memorizes he occurrence of an error condiion and conrols he Q2 and Q3 swiches. The flip-flop can be cleared by holding he inpu low for he specified minimum duraion. COMP1 and COMP2 comparaors are used o compare he over-curren and over-emperaure signals wih he buil-in reference. Eiher comparaor can rese he faul flip-flop and urn Q1 off. During faul condiion, Q2 disconnecs gae of Q1 from he inpu, Q3 shors he gae and source of Q1, resuling in rapid urn-off of Q1. The zener diode beween he gae and drain of Q1 urns Q1 on, when he drain o source volage exceeds 55V. Swiching Characerisics In he IRSF3010 he conrol logic and he proecion circuis are powered from he inpu pin. When posiive volage appears a he inpu pin he R-S flip-flop urns Q2 on and connecs he gae of he main device o he inpu. The urn-on speed is limied by he channel resisance of Q2 and he gae charge requiremens of Q1. The ypical swiching waveforms a 5V inpu volage are shown in figure 21. Using higher inpu volage will improve he urn-on ime bu i does no affec he urnoff swiching speed. Inpu volage 5V/ Drain volage 5V/ 10 Fig.20 Block Diagram Drain Curren: 1A/div. Time: 1µsV/div. Fig.21 Waveforms swiching clamped indicive load using 5V inpu volage

The ypical waveforms a 7V inpu volage are shown in figure 22. In ypical swiching applicaions, below 40kHz, he difference in swiching losses beween he IRSF3010 and he same size sandard MOSFET is negligible. Inpu volage 5V/ Drain volage 5V/ Drain Curren: 1A/ The ypical waveforms a over-curren shu-down are shown in figure 23. Afer urn-on he curren in he inducor a he drain sars ramping up. A abou 15A he over-curren proecion shus down he device. Over-emperaure Proecion Figure 24 illusraes he operaion of he over-emperaure proecion. The IRSF3010 swiches a 1Ω resisive load o a 12V power supply. When he hermal balance is esablished he juncion emperaure is limied on pulse by pulse basis. Inpu volage 10V/div. Drain volage 5V/div. Time: 1µsV/div. Fig. 22 Swiching waveforms wih 7V Inpu volage Over-curren Proecion When he drain curren exceeds he prese limi he proecion circui reses he inernal flip-flop and urns Q1 off. The normal operaion can be resored by holding he inpu volage below he specified hreshold level (approx. 1.3V) for he specified minimum rese ime. Inpu volage 5V/div. Drain Curren: 2A/div. Drain volage 5V/div. Drain Curren: 2A/div. Time: 10µsV/div. Fig. 24 Over-emperaure shu-down Over-volage Proecion When he drain o source volage exceeds 55V he zener diode beween gae and drain urns he IRSF3010 on, before he breakdown volage of he drain-source diode is reached. This grealy enhances he energy he device can wihsand safely during urnoff of inducive loads compared o avalanche breakdown. Thus he device can be used for fas deenergizaion of inducive loads. The absorbed energy is limied only by he maximum juncion emperaure. Time: 10µsV/div. Fig. 23 Waveforms a over-curren shu-down WORLD HEADQUARTERS: 233 Kansas S., El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurs Green, Oxed, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 7321 Vicoria Park Ave., Suie 201, Markham, Onario L3R 2Z8, Tel: (905) 475 1897 IR GERMANY: Saalburgsrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: 171 (K&H Bldg.), 30-4 Nishi-ikebukuro 3-Chome, Toshima-ku, Tokyo Japan Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 315 Ouram Road, #10-02 Tan Boon Lia Building, Singapore 0316 Tel: 65 221 8371 hp://www.irf.com/ Daa and specificaions subjec o change wihou noice. 12/96 11