General Purpose Transistors NPN Silicon Features PbFree Packages are Available* MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage V CEO 4 Vdc Collector Base Voltage V CBO 6 Vdc Emitter Base Voltage V EBO 6. Vdc Collector Current Continuous I C 6 madc Total Device Dissipation @ T A = 25 C Derate above 25 C Total Device Dissipation @ T C = 25 C Derate above 25 C Operating and Storage Junction Temperature Range THERMAL CHARACTERISTICS P D 625 P D 1.5 12 T J, T stg 55 to +15 mw mw/ C W mw/ C Characteristic Symbol Max Unit Thermal Resistance, JunctiontoAmbient R JA 2 C/W Thermal Resistance, JunctiontoCase R JC 83.3 C/W Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. C TO92 CASE 29 STYLE 1 2 BASE COLLECTOR 3 1 EMITTER 1 1 2 2 3 3 STRAIGHT LEAD BULK PACK MARKING DIAGRAM 2N 441 AYWW BENT LEAD TAPE & REEL AMMO PACK 2N441 = Device Code A = Assembly Location Y = Year WW = Work Week = PbFree Package (Note: Microdot may be in either location) *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2 February, 2 Rev. 4 1 Publication Order Number: 2N441/D
ELECTRICAL CHARACTERISTICS (T A = 25 C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS CollectorEmitter Breakdown Voltage (Note 1) (I C = 1. madc, I B = ) V (BR)CEO 4 Vdc CollectorBase Breakdown Voltage (I C =.1 madc, I E = ) V (BR)CBO 6 Vdc EmitterBase Breakdown Voltage (I E =.1 madc, I C = ) V (BR)EBO 6. Vdc Base Cutoff Current (V CE = 35 Vdc, V EB =.4 Vdc) I BEV.1 Adc Collector Cutoff Current (V CE = 35 Vdc, V EB =.4 Vdc) I CEX.1 Adc ON CHARACTERISTICS (Note 1) DC Current Gain (I C =.1 madc, V CE = 1. Vdc) (I C = 1. madc, V CE = 1. Vdc) (I C = madc, V CE = 1. Vdc) (I C = 15 madc, V CE = 1. Vdc) (I C = 5 madc, V CE = Vdc) h FE 2 4 8 4 3 CollectorEmitter Saturation Voltage (I C = 15 madc, I B = 15 madc) (I C = 5 madc, I B = 5 madc) V CE(sat).4.75 Vdc BaseEmitter Saturation Voltage (I C = 15 madc, I B = 15 madc) (I C = 5 madc, I B = 5 madc) V BE(sat).75.95 1.2 Vdc SMALLSIGNAL CHARACTERISTICS CurrentGain Bandwidth Product (I C = 2 madc, V CE = Vdc, f = MHz) f T 25 MHz CollectorBase Capacitance (V CB = Vdc, I E =, f = 1. MHz) C cb 6.5 pf EmitterBase Capacitance (V EB =.5 Vdc, I C =, f = 1. MHz) C eb 3 pf Input Impedance (I C = 1. madc, V CE = Vdc, f = 1. khz) h ie 1. 15 k Voltage Feedback Ratio (I C = 1. madc, V CE = Vdc, f = 1. khz) h re.1 8. X 4 SmallSignal Current Gain (I C = 1. madc, V CE = Vdc, f = 1. khz) h fe 4 5 Output Admittance (I C = 1. madc, V CE = Vdc, f = 1. khz) h oe 1. 3 mhos SWITCHING CHARACTERISTICS Delay Time (V CC = 3 Vdc, V BE = Vdc, t d 15 ns Rise Time I C = 15 madc, I B1 = 15 madc) t r 2 ns Storage Time (V CC = 3 Vdc, I C = 15 madc, t s 225 ns Fall Time I B1 = I B2 = 15 madc) t f 3 ns 1. Pulse Test: Pulse Width 3 s, Duty Cycle %. ORDERING INFORMATION Device Package Shipping 2N441 TO92 5 Units / Bulk 2N441G TO92 (PbFree) 5 Units / Bulk 2N441RLRA TO92 2 / Tape & Reel 2N441RLRAG 2N441RLRMG TO92 (PbFree) TO92 (PbFree) 2 / Tape & Reel 2 / Tape & Ammo Box 2N441RLRP TO92 2 / Tape & Ammo Box 2N441RLRPG TO92 (PbFree) 2 / Tape & Ammo Box For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD811/D. 2
SWITCHING TIME EQUIVALENT TEST CIRCUITS +16 V 1. to s, DUTY CYCLE % + 3 V 2 +16 V 1. to s, DUTY CYCLE % + 3 V 2 - V < ns 1. k C S * < pf -14 V < 2 ns 1. k C S * < pf Scope rise time < 4. ns - 4. V *Total shunt capacitance of test jig connectors, and oscilloscope Figure 1. TurnOn Time Figure 2. TurnOff Time TRANSIENT CHARACTERISTICS 25 C C CAPACITANCE (pf) 3 2 7. C obo Q, CHARGE (nc) 7. 3. 1..7.5 V CC = 3 V I C /I B = Q T 3. C cb.3.2 Q A.1.2.3.5 1. 3. 2 REVERSE VOLTAGE (VOLTS) 3 5.1 2 3 5 7 2 3 5 Figure 3. Capacitances Figure 4. Charge Data 7 5 I C /I B = 7 5 t r V CC = 3 V I C /I B = t, TIME (ns) 3 2 t r @ V CC = 3 V t r @ V CC = V 3 t d @ V EB = V t d @ V EB = 2 t, TIME (ns) t f 7. 7. 2 3 5 7 2 3 5 Figure 5. TurnOn Time 2 3 5 7 2 3 5 Figure 6. Rise and Fall Times 3
ts, STORAGE TIME (ns) 3 2 7 5 3 2 3 5 7 2 3 5 Figure 7. Storage Time t s = t s - 1/8 t f I B1 = I B2 I C /I B = to 2 tf, FALL TIME (ns) 7 5 3 2 7. I C /I B = I C /I B = 2 2 3 5 7 2 3 5 Figure 8. Fall Time V CC = 3 V I B1 = I B2 SMALLSIGNAL CHARACTERISTICS NOISE FIGURE V CE = Vdc, T A = 25 C; Bandwidth = 1. Hz NF, NOISE FIGURE (db) 8. 6. 4. I C = 1. ma, R S = 15 I C = 5 A, R S = 2 I C = A, R S = k I C = 5 A, R S = 4. k R S = OPTIMUM RS = SOURCE RS = RESISTANCE NF, NOISE FIGURE (db) 8. 6. 4. f = 1. khz I C = 5 A I C = A I C = 5 A I C = 1. ma.1.2.5.1.2.5 1. 2 5 f, FREQUENCY (khz) Figure 9. Frequency Effects 5 2 5 1. k k k k 2 k 5 k k R S, SOURCE RESISTANCE (OHMS) Figure. Source Resistance Effects 4
h PARAMETERS V CE = Vdc, f = 1. khz, T A = 25 C This group of graphs illustrates the relationship between h fe and other h parameters for this series of transistors. To obtain these curves, a highgain and a lowgain unit were selected from the 2N441 lines, and the same units were used to develop the correspondingly numbered curves on each graph. hfe, CURRENT GAIN 3 2 7 5 3 2N441 UNIT 1 2N441 UNIT 2 h ie, INPUT IMPEDANCE (OHMS) 5 k 2 k k k k 1. k 2N441 UNIT 1 2N441 UNIT 2 2.1.2.3.5.7 1. 3. 7. 5.1.2.3.5.7 1. 3. 7. Figure 11. Current Gain Figure 12. Input Impedance h, VOLTAGE FEEDBACK RATIO (X -4 re ) 7. 3. 1..7.5.3 2N441 UNIT 1 2N441 UNIT 2.2.1.2.3.5.7 1. 3. 7. h oe, OUTPUT ADMITTANCE ( mhos) 5 2 1..1.2.3.5.7 1. 3. 7. 2N441 UNIT 1 2N441 UNIT 2 Figure 13. Voltage Feedback Ratio Figure 14. Output Admittance 5
STATIC CHARACTERISTICS h FE, NORMALIZED CURRENT GAIN 3. 1..7.5.3.2.1.2.3 V CE = 1. V V CE = V T J = 125 C 25 C - 55 C.5.7 1. 3. 7. 2 3 5 7 2 3 5 Figure 15. DC Current Gain V CE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 1..8.6.4.2.1 I C = 1. ma.2.3.5.7 T J = 25 C ma ma 5 ma.1.2.3.5.7 1. 3. 7. 2 3 5 I B, BASE CURRENT (ma) Figure 16. Collector Saturation Region 1..8 T J = 25 C V BE(sat) @ I C /I B = +.5 VC for V CE(sat) VOLTAGE (VOLTS).6.4 V BE @ V CE = V COEFFICIENT (mv/ C) -.5-1. - 1.5.2 V CE(sat) @ I C /I B = - VB for V BE.1.2.5 1. 2 5 2 5-2.5.1.2.5 1. 2 5 2 5 Figure 17. On Voltages Figure 18. Temperature Coefficients 6
PACKAGE DIMENSIONS TO92 (TO226) CASE 2911 ISSUE AM R A N B STRAIGHT LEAD BULK PACK NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. P L SEATING INCHES MILLIMETERS PLANE K DIM MIN MAX MIN MAX A.175.25 4.45 5.2 B.17.2 4.32 5.33 C.125.165 3.18 4.19 D.16.21.47.533 X X D G.45.55 1.15 1.39 H.95.5 2.42 2.66 G J.15.2.39.5 H J K.5 --- 12.7 --- V C L.25 --- 6.35 --- N.8.5 4 2.66 SECTION XX R.115 --- 2.93 --- 1 N V.135 --- 3.43 --- P ---. --- 2.54 R T SEATING PLANE P G A X X V 1 B K C N BENT LEAD TAPE & REEL AMMO PACK D J SECTION XX NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. MILLIMETERS DIM MIN MAX A 4.45 5.2 B 4.32 5.33 C 3.18 4.19 D.4.54 G 2.4 2.8 J.39.5 K 12.7 --- N 4 2.66 P 1.5 4. R 2.93 --- V 3.43 --- STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 8217 USA Phone: 336752175 or 8344386 Toll Free USA/Canada Fax: 336752176 or 83443867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 82829855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 79 29 Japan Customer Focus Center Phone: 8135773385 7 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your loca Sales Representative 2N441/D