Small Signal Switching Transistor NPN Silicon Features MILPRF19/ Qualified Available as JAN, JANTX, and JANTXV COLLECTOR MAXIMUM RATINGS (T A = unless otherwise noted) Characteristic Symbol Value Unit CollectorEmitter Voltage V CEO Vdc CollectorBase Voltage V CBO 7 Vdc EmitterBase Voltage V EBO 6. Vdc Collector Current Continuous I C 8 madc Total Device Dissipation @ T A = P T mw Total Device Dissipation @ T C = P T 1. W Operating and Storage Junction Temperature Range THERMAL CHARACTERISTICS T J, T stg 6 to + Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient R JA C/W Thermal Resistance, Junction to Case R JC 1 C/W Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. C BASE 1 EMITTER TO18 CASE 6AA STYLE 1 Device Package Shipping JANNA ORDERING INFORMATION JANTXNA TO18 Bulk JANTXVNA Semiconductor Components Industries, LLC, 1 November, 1 Rev. 1 Publication Order Number: NA/D
ELECTRICAL CHARACTERISTICS (T A = unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS CollectorEmitter Breakdown Voltage (I C = 1 madc) V (BR)CEO Vdc CollectorBase Cutoff Current (V CB = 7 Vdc) (V CB = 6 Vdc) EmitterBase Cutoff Current (V EB = 6. Vdc) (V EB = 4. Vdc) CollectorEmitter Cutoff Current (V CE = Vdc) I CBO I EBO 1 1 1 1 Adc nadc Adc nadc I CES nadc ON CHARACTERISTICS (Note 1) DC Current Gain (I C =.1 madc, V CE = 1 Vdc) (I C = 1. madc, V CE = 1 Vdc) (I C = 1 madc, V CE = 1 Vdc) (I C = 1 madc, V CE = 1 Vdc) (I C = madc, V CE = 1 Vdc) CollectorEmitter Saturation Voltage (I C = 1 madc, I B = 1 madc) (I C = madc, I B = madc) BaseEmitter Saturation Voltage (I C = 1 madc, I B = 1 madc) (I C = madc, I B = madc) SMALLSIGNAL CHARACTERISTICS Magnitude of SmallSignal Current Gain (I C = madc, V CE = Vdc, f = 1 MHz) SmallSignal Current Gain (I C = 1. madc, V CE = 1 Vdc, f = 1 khz) Input Capacitance (V EB =. Vdc, I C =, 1 khz f 1. MHz) Output Capacitance (V CB = 1 Vdc, I E =,1 khz f 1. MHz ) SWITCHING (SATURATED) CHARACTERISTICS TurnOn Time (Reference Figure in MILPRF19/) TurnOff Time (Reference Figure in MILPRF19/) h FE 7 1 1 V CE(sat) V BE(sat).6 h fe. 1. 1... h fe C ibo C obo 8. Vdc Vdc pf pf t on ns t off ns Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width = s, Duty Cycle.%.
h FE, DC CURRENT GAIN 4 1 C 1 C 1 V CE = 1 V.1 1 1 1 Figure 1. DC Current Gain V BESAT, BASEEMITTER 1. 1. C.8.6 1 C.4. I C /I B = 1.1 1 1 1 Figure. BaseEmitter Saturation Voltage V CESAT, COLLECTOREMITTER.4...1 I C /I B = 1 C.1 1 1 1 1 C Figure. CollectorEmitter Saturation Voltage V BEON, BASEEMITTER VOLTAGE (V) 1.1 1. V CE = 1 V.9 C.8.7.6 1 C..4...1.1 1 1 1 Figure 4. BaseEmitter Voltage V CESAT, COLLECTOREMITTER 1..1 I C = 1 ma 1 ma ma ma.1.1.1 1 1 I B, BASE CURRENT (ma) Figure. Collector Saturation Region C IBO, INPUT CAPACITANCE (pf) 1 1 1 4 V BE, BASEEMITTER (V) Figure 6. Input Capacitance T J = C f TEST = 1 khz
C OBO, INPUT CAPACITANCE (pf) 1 1 4 6 8 1 1 14 16 18 V BC, BASECOLLECTOR VOLTAGE (V) Figure 7. Output Capacitance T J = C f TEST = 1 khz f, CURRENT GAIN BANDWIDTH (MHz) 1 1 1 1 1 Figure 8. Current Gain Bandwidth Product 4
PACKAGE DIMENSIONS TO18 CASE 6AA ISSUE A DETAIL X U R F NOTE H M C X J B A B P D L C K.7 (.18MM) A B S C M N A NOTES 4 & 6 SEATING PLANE E T NOTE 7 1 U DETAIL X LEAD IDENTIFICATION DETAIL NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.M, 1994.. CONTROLLING DIMENSION: INCHES.. DIMENSION J MEASURED FROM DIAMETER A TO EDGE. 4. LEAD TRUE POSITION TO BE DETERMINED AT THE GUAGE PLANE DEFINED BY DIMENSION R.. DIMENSION F APPLIES BETWEEN DIMENSION P AND L. 6. DIMENSION D APPLIES BETWEEN DIMENSION L AND K. 7. BODY CONTOUR OPTIONAL WITHIN ZONE DEFINED BY DIMEN SIONS A, B, AND T. MILLIMETERS INCHES DIM MIN MAX MIN MAX A.1.84.9. B 4. 4.9.178.19 C 4...17.1 D.41..16.1 E ---.76 ---. F.41.48.16.19 H.91 1.17.6.46 J.71 1..8.48 K 1.7 19...7 L 6. ---. --- M 4 BSC 4 BSC N.4 BSC.1 BSC P --- 1.7 ---. R 1.7 BSC.4 BSC T ---.76 ---. U.4 ---.1 --- STYLE 1: PIN 1. EMITTER. BASE. COLLECTOR ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC s product/patent coverage may be accessed at www.onsemi.com/site/pdf/patentmarking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 16, Denver, Colorado 817 USA Phone: 6717 or 84486 Toll Free USA/Canada Fax: 67176 or 844867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 8898 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 41 79 91 Japan Customer Focus Center Phone: 818171 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative NA/D