SPI Serial EEPROMs 8K (1024 x 8) 16K (2048 x 8) 32K (4096 x 8) 64K (8192 x 8) AT25080A AT25160A AT25320A AT25640A. Not Recommended for New Design



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Features Serial Peripheral Interface (SPI) Compatible Supports SPI Modes (,) and 3 (1,1) Datasheet Describes Mode Operation Low-voltage and Standard-voltage Operation.7 (V CC =.7V to.v) 1.8 (V CC = 1.8V to.v) MHz Clock Rate (V) 3-byte Page Mode Block Write Protection Protect 1/4, 1/, or Entire Array Write Protect (WP) Pin and Write Disable Instructions for Both Hardware and Software Data Protection Self-timed Write Cycle ( ms max) High Reliability Endurance: One Million Write Cycles Data Retention: 1 Years Available in Automotive 8-lead JEDEC PDIP, 8-lead JEDEC SOIC, 8-lead TSSOP, 8-lead MAP, 8-lead Ultra Thin Mini-MAP (MLP x3) and 8-lead TSSOP Packages Die Sales: Wafer Form, Tape and Reel, and Bumped Wafers Description The AT8A/16A/3A/64A provides 819/16384/3768/636 bits of serial electrically-erasable programmable read-only memory (EEPROM) organized as 14/48/496/819 words of 8 bits each. The device is optimized for use in many industrial and commercial applications where low-power and low-voltage operation are essential. The AT8A/16A/3A/64A is available in space-saving 8-lead PDIP, 8-lead JEDEC SOIC, 8-lead MAP, 8-lead Ultra Thin Mini-MAP (MLP x3), 8- lead TSSOP and 8-Lead Ultra Leadframe Land Grid Array (ULLGA) packages. The AT8A/16A/3A/64A is enabled through the Chip Select pin (CS) and accessed via a three-wire interface consisting of Serial Data Input (SI), Serial Data Output (SO), and Serial Clock (SCK). All programming cycles are completely selftimed, and no separate erase cycle is required before write. SPI Serial EEPROMs 8K (14 x 8) 16K (48 x 8) 3K (496 x 8) 64K (819 x 8) AT8A AT16A AT3A AT64A Not Recommended for New Design 3347M SEEPR 6/7

Table -1. Pin Name CS SCK SI SO GND VCC WP HOLD NC DC Pin Configuration Function Chip Select Serial Data Clock Serial Data Input Serial Data Output Ground Power Supply Write Protect Suspends Serial Input No Connect Don t Connect CS SO WP GND CS SO WP GND VCC HOLD SCK SI 8-lead PDIP 1 3 4 8 7 6 8-lead TSSOP 1 3 4 8 7 6 8-lead MAP 8 7 6 1 3 4 Bottom View VCC HOLD SCK SI VCC HOLD SCK SI CS SO WP GND CS SO WP GND 8-lead SOIC 1 3 4 VCC 8 HOLD 7 SCK 6 SI 8 7 6 VCC HOLD SCK SI 8-lead Ultra Thin Mini-MAP (MLP x VCC HOLD SCK SI Bottom View 8-lead ULLGA 8 7 6 1 CS SO 3 WP 4 GND 1 3 4 Bottom View CS SO WP GND Block write protection is enabled by programming the status register with one of four blocks of write protection. Separate program enable and program disable instructions are provided for additional data protection. Hardware data protection is provided via the WP pin to protect against inadvertent write attempts to the status register. The HOLD pin may be used to suspend any serial communication without resetting the serial sequence. 1. Absolute Maximum Ratings* Operating Temperature... C to +1 C Storage Temperature... 6 C to +1 C Voltage on Any Pin with Respect to Ground... 1.V to +7.V Maximum Operating Voltage... 6.V *NOTICE: Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. DC Output Current.... ma AT8A/16A/3A/64A

AT8A/16A/3A/64A Figure 1-1. Block Diagram Table 1-1. Pin Capacitance (1) Applicable over recommended operating range from T A = C, f = 1. MHz, V CC = +.V (unless otherwise noted) Symbol Test Conditions Max Units Conditions C OUT Output Capacitance (SO) 8 pf V OUT =V C IN Input Capacitance (CS, SCK, SI, WP, HOLD) 6 pf V IN =V Note: 1. This parameter is characterized and is not 1% tested. 3

Table 1-. DC Characteristics Applicable over recommended operating range from: T AI = 4 C to +8 C, V CC = +1.8V to +.V (unless otherwise noted) Symbol Parameter Test Condition Min Typ Max Units V CC1 Supply Voltage 1.8. V V CC Supply Voltage.7. V V CC3 Supply Voltage 4.. V I CC1 Supply Current V CC =.V at MHz, SO = Open, Read 7. 1. ma I CC Supply Current V CC =.V at MHz, SO = Open, Read, Write Notes: 1. V IL min and V IH max are reference only and are not tested.. Worst case measured at 8 C 4. 1. ma V I CC3 Supply Current CC =.V at MHz, SO = Open, 4. 6. ma Read, Write I SB1 Standby Current V CC = 1.8V, CS = V CC <.1 6. () µa I SB Standby Current V CC =.7V, CS = V CC.3 7. () µa I SB3 Standby Current V CC =.V, CS = V CC. 1. () µa I IL Input Leakage V IN =VtoV CC 3. 3. µa I OL Output Leakage V IN =VtoV CC,T AC = C to 7 C 3. 3. µa (1) V IL Input Low-voltage.6 V CC x.3 V (1) V IH Input High-voltage V CC x.7 V CC +. V V OL1 Output Low-voltage I OL = 3. ma.4 V 4.V V CC.V V OH1 Output High-voltage I OH = 1.6 ma V CC -.8 V V OL Output Low-voltage I OL =.1 ma. V 1.8V V CC 3.6V V OH Output High-voltage I OH = 1 µa V CC -. V 4 AT8A/16A/3A/64A

AT8A/16A/3A/64A Table 1-3. AC Characteristics Applicable over recommended operating range from T AI = 4 C to+8 C, V CC = As Specified, CL = 1 TTL Gate and 3 pf (unless otherwise noted) Symbol Parameter Voltage Min Max Units f SCK t RI t FI t WH t WL t CS t CSS t CSH t SU t H t HD t CD t V t HO SCK Clock Frequency Input Rise Time Input Fall Time SCK High Time SCK Low Time CS High Time CS Setup Time CS Hold Time Data In Setup Time Data In Hold Time HOLD Setup Time HOLD Hold Time Output Valid Output Hold Time 4...7. 1.8. 4...7. 1.8. 4...7. 1.8. 4...7. 1.8. 4...7. 1.8. 4...7. 1.8. 4...7. 1.8. 4...7. 1.8. 4...7. 1.8. 4...7. 1.8. 4...7. 1.8. 4...7. 1.8. 4...7. 1.8. 4...7. 1.8. 4 8 4 8 1 1 1 1 1 1 1 1 4 8 MHz µs µs ns ns ns ns ns ns ns ns ns ns

Table 1-3. AC Characteristics (Continued) Applicable over recommended operating range from T AI = 4 C to+8 C, V CC = As Specified, CL = 1 TTL Gate and 3 pf (unless otherwise noted) Symbol Parameter Voltage Min Max Units t LZ t HZ t DIS t WC HOLD to Output Low Z HOLD to Output High Z Output Disable Time Write Cycle Time Note: 1. This parameter is characterized and is not 1% tested. 4...7. 1.8. 4...7. 1.8. 4...7. 1.8. 4...7. 1.8. Endurance (1).V, C, Page Mode 1M Write Cycles 1 4 8 4 8 ns ns ns ms 6 AT8A/16A/3A/64A

AT8A/16A/3A/64A. Serial Interface Description MASTER: The device that generates the serial clock. SLAVE: Because the Serial Clock pin (SCK) is always an input, the AT8A/16A/3A/64A always operates as a slave. TRANSMITTER/RECEIVER: The AT8A/16A/3A/64A has separate pins designated for data transmission (SO) and reception (SI). MSB: The Most Significant Bit (MSB) is the first bit transmitted and received. SERIAL OP-CODE: After the device is selected with CS going low, the first byte will be received. This byte contains the op-code that defines the operations to be performed. INVALID OP-CODE: If an invalid op-code is received, no data will be shifted into the AT8A/16A/3A/64A, and the serial output pin (SO) will remain in a high impedance state until the falling edge of CS is detected again. This will reinitialize the serial communication. CHIP SELECT: The AT8A/16A/3A/64A is selected when the CS pin is low. When the device is not selected, data will not be accepted via the SI pin, and the serial output pin (SO) will remain in a high impedance state. HOLD: The HOLD pin is used in conjunction with the CS pin to select the AT8A/16A/3A/64A. When the device is selected and a serial sequence is underway, HOLD can be used to pause the serial communication with the master device without resetting the serial sequence. To pause, the HOLD pin must be brought low while the SCK pin is low. To resume serial communication, the HOLD pin is brought high while the SCK pin is low (SCK may still toggle during HOLD). Inputs to the SI pin will be ignored while the SO pin is in the high impedance state. WRITE PROTECT: The write protect pin (WP) will allow normal read/write operations when held high. When the WP pin is brought low and WPEN bit is 1, all write operations to the status register are inhibited. WP going low while CS is still low will interrupt a write to the status register. If the internal write cycle has already been initiated, WP going low will have no effect on any write operation to the status register. The WP pin function is blocked when the WPEN bit in the status register is. This will allow the user to install the AT8A/16A/3A/64A in a system with the WP pin tied to ground and still be able to write to the status register. All WP pin functions are enabled when the WPEN bit is set to 1. 7

Figure -1. SPI Serial Interface AT8A/16A/3A/64A 8 AT8A/16A/3A/64A

AT8A/16A/3A/64A 3. Functional Description The AT8A/16A/3A/64A is designed to interface directly with the synchronous serial peripheral interface (SPI) of the 68 and 68HC11 series of microcontrollers. The AT8A/16A/3A/64A utilizes an 8-bit instruction register. The list of instructions and their operation codes are contained in Table 3-1. All instructions, addresses, and data are transferred with the MSB first and start with a high-to-low CS transition. Table 3-1. Instruction Set for the AT8A/16A/3A/64A Instruction Name Instruction Format Operation WREN X11 Set Write Enable Latch WRDI X1 Reset Write Enable Latch RDSR X11 Read Status Register WRSR X1 Write Status Register READ X11 Read Data from Memory Array WRITE X1 Write Data to Memory Array WRITE ENABLE (WREN): The device will power up in the write disable state when V CC is applied. All programming instructions must therefore be preceded by a Write Enable instruction. WRITE DISABLE (WRDI): To protect the device against inadvertent writes, the Write Disable instruction disables all programming modes. The WRDI instruction is independent of the status of the WP pin. READ STATUS REGISTER (RDSR): The Read Status Register instruction provides access to the status register. The READY/BUSY and Write Enable status of the device can be determined by the RDSR instruction. Similarly, the Block Write Protection Bits indicate the extent of protection employed. These bits are set by using the WRSR instruction. Table 3-. Status Register Format Bit 7 Bit 6 Bit Bit 4 Bit 3 Bit Bit 1 Bit WPEN X X X BP1 BP WEN RDY 9

Table 3-3. Bit Bit(RDY) Read Status Register Bit Definition Definition Bit = (RDY) indicates the device is READY. Bit = 1 indicates the write cycle is in progress. Bit 1 (WEN) Bit 1= indicates the device is not WRITE ENABLED. Bit 1 = 1 indicates the device is write enabled. Bit (BP) See Table 3-4 on page 1. Bit 3 (BP1) See Table 3-4 on page 1. Bits 4 6 are s when device is not in an internal write cycle. Bit 7 (WPEN) See Table 3- on page 11. Bits 7 are 1 s during an internal write cycle. WRITE STATUS REGISTER (WRSR): The WRSR instruction allows the user to select one of four levels of protection. The AT8A/16A/3A/64A is divided into four array segments. One-quarter, one-half, or all of the memory segments can be protected. Any of the data within any selected segment will therefore be read only. The block write protection levels and corresponding status register control bits are shown in Table 3-4. The three bits BP, BP1, and WPEN are nonvolatile cells that have the same properties and functions as the regular memory cells (e.g., WREN, t WC, RDSR). Table 3-4. Level Block Write Protect Bits Status Register Bits Array Addresses Protected BP1 BP AT8A AT16A AT3A AT64A None None None None 1(1/4) 1 (1/) 1 3(All) 1 1 3 3FF 3FF 3FF 6 7FF 4 7FF 7FF C FFF 8 FFF FFF 18 1FFF 1 1FFF 1FFF The WRSR instruction also allows the user to enable or disable the write protect (WP) pin through the use of the Write Protect Enable (WPEN) bit. Hardware write protection is enabled when the WP pin is low and the WPEN bit is 1. Hardware write protection is disabled when either the WP pin is high or the WPEN bit is. When the device is hardware write protected, writes to the status register, including the block protect bits and the WPEN bit, and the block-protected sections in the memory array are disabled. Writes are only allowed to sections of the memory that are not block-protected. NOTE: When the WPEN bit is hardware write protected, it cannot be changed back to as long as the WP pin is held low. 1 AT8A/16A/3A/64A

AT8A/16A/3A/64A Table 3-. WPEN Operation WPEN WP WEN Protected Blocks Unprotected Blocks Status Register X Protected Protected Protected X 1 Protected Writeable Writeable 1 Low Protected Protected Protected 1 Low 1 Protected Writeable Protected X High Protected Protected Protected X High 1 Protected Writeable Writeable READ SEQUENCE (READ): Reading the AT8A/16A/3A/64A via the Serial Output (SO) pin requires the following sequence. After the CS line is pulled low to select a device, the read op-code is transmitted via the SI line followed by the byte address to be read (A1 A, see Table 3-6). Upon completion, any data on the SI line will be ignored. The data (D7 D) at the specified address is then shifted out onto the SO line. If only one byte is to be read, the CS line should be driven high after the data comes out. The read sequence can be continued since the byte address is automatically incremented and data will continue to be shifted out. When the highest address is reached, the address counter will roll over to the lowest address allowing the entire memory to be read in one continuous read cycle. WRITE SEQUENCE (WRITE): In order to program the AT8A/16A/3A/64A, two separate instructions must be executed. First, the device must be write enabled via the WREN instruction. Then a write (WRITE) instruction may be executed. Also, the address of the memory location(s) to be programmed must be outside the protected address field location selected by the block write protection level. During an internal write cycle, all commands will be ignored except the RDSR instruction. A write instruction requires the following sequence. After the CS line is pulled low to select the device, the WRITE op-code is transmitted via the SI line followed by the byte address (A1 A) and the data (D7 D) to be programmed (see Table 3-6). Programming will start after the CS pin is brought high. The low-to-high transition of the CS pin must occur during the SCK low-time immediately after clocking in the D (LSB) data bit. The READY/BUSY status of the device can be determined by initiating a read status register (RDSR) instruction. If Bit = 1, the write cycle is still in progress. If Bit =, the write cycle has ended. Only the RDSR instruction is enabled during the write programming cycle. The AT8A/16A/3A/64A is capable of a 3-byte page write operation. After each byte of data is received, the five low-order address bits are internally incremented by one; the highorder bits of the address will remain constant. If more than 3 bytes of data are transmitted, the address counter will roll over and the previously written data will be overwritten. The AT8A/16A/3A/64A is automatically returned to the write disable state at the completion of a write cycle. NOTE: If the device is not write-enabled (WREN), the device will ignore the write instruction and will return to the standby state, when CS is brought high. A new CS falling edge is required to reinitiate the serial communication. 11

Table 3-6. Address Key Address AT8A AT16A AT3A AT64A A N A 9 A A 1 A A 11 A A 1 A Don t Care Bits A 1 A 1 A 1 A 11 A 1 A 1 A 1 A 13 4. Timing Diagrams Figure 4-1. Synchronous Data Timing (for Mode ) t CS CS V IH V IL tcss t CSH SCK V IH t WH t WL V IL t SU t H SI V IH V IL VALID IN t V t HO t DIS SO V OH HI-Z HI-Z V OL Figure 4-. WREN Timing 1 AT8A/16A/3A/64A

AT8A/16A/3A/64A Figure 4-3. WRDI Timing Figure 4-4. RDSR Timing CS SCK 1 3 4 6 7 8 9 1 11 1 13 14 1 SI INSTRUCTION DATA OUT HIGH IMPEDANCE SO 7 6 4 3 1 MSB Figure 4-. WRSR Timing CS SCK 1 3 4 6 7 8 9 1 11 1 13 14 1 SI INSTRUCTION 7 6 DATA IN 4 3 1 SO HIGH IMPEDANCE 13

Figure 4-6. CS READ Timing SCK 1 3 4 6 7 8 9 1 11 1 3 4 6 7 8 9 3 31 SI INSTRUCTION BYTE ADDRESS 1 14 13... 3 1 SO HIGH IMPEDANCE 7 MSB 6 DATA OUT 4 3 1 Figure 4-7. WRITE Timing CS SCK 1 3 4 6 7 8 9 1 11 1 3 4 6 7 8 9 3 31 SI INSTRUCTION BYTE ADDRESS DATA IN 1 14 13... 3 1 7 6 4 3 1 SO HIGH IMPEDANCE Figure 4-8. CS HOLD Timing t CD t CD SCK t HD HOLD t HD t HZ SO t LZ 14 AT8A/16A/3A/64A

AT8A/16A/3A/64A. AT8A Ordering Information (1) Ordering Code Package Operation Range AT8A-1PU-.7 () AT8A-1PU-1.8 () AT8AN-1SU-.7 () AT8AN-1SU-1.8 () AT8A-1TU-.7 () AT8A-1TU-1.8 () () (Not recommended for new design) AT8AY1-1YU-1.8 AT8AY6-1YH-1.8 (3) AT8A-W1.8-11 (4) Notes: 1. For.7V devices used in the 4. to.v range, please refer to performance values in the AC and DC Characteristics tables.. U designates Green package + RoHS compliant. 3. H designates Green package + RoHS compliant, with NiPdAu Lead Finish. 4. Available in waffle pack and wafer form; order as SL788 for inkless wafer form. Bumped die available upon request. Please contact Serial EEPROM Marketing. 8P3 8P3 8S1 8S1 8A 8A 8Y1 8Y6 Die Sale Lead-free/Halogen-free/ Industrial Temperature ( 4 to 8 C) Industrial Temperature ( 4 to 8 C) 8P3 8S1 8A 8Y1 8Y6 Package Type 8-lead,.3" Wide, Plastic Dual Inline Package (PDIP) 8-lead,.1" Wide, Plastic Gull Wing Small Outline (JEDEC SOIC) 8-lead, 4.4 mm Body, Plastic Thin Shrink Small Outline Package (TSSOP) 8-lead, 4.9 mm x 3. mm Body, Dual Footprint, Non-leaded, Miniature Array Package (MAP) 8-lead,. mm x 3. mm Body,. mm Pitch, Ultra Thin Mini-MAP, Dual No Lead Package (DFN), (MLP x3mm).7 Low Voltage (.7 to.v) 1.8 Low Voltage (1.8 to.v) Options 1

6. AT16A Ordering Information (1) Ordering Code Package Operation Range AT16A-1PU-.7 () AT16A-1PU-1.8 () AT16AN-1SU-.7 () AT16AN-1SU-1.8 () AT16A-1TU-.7 () AT16A-1TU-1.8 () () (Not recommended for new design) AT16AY1-1YU-1.8 AT16AY6-1YH-1.8 (3) AT16AD3-1DH-1.8 AT16A-W1.8-11 (4) Notes: 1. For.7V devices used in the 4. to.v range, please refer to performance values in the AC and DC Characteristics tables.. U designates Green package + RoHS compliant. 3. H designates Green package + RoHS compliant, with NiPdAu Lead Finish. 4. Available in waffle pack and wafer form; order as SL788 for inkless wafer form. Bumped die available upon request. Please contact Serial EEPROM Marketing. 8P3 8P3 8S1 8S1 8A 8A 8Y1 8Y6 8D3 Die Sale Lead-free/Halogen-free/ Industrial Temperature ( 4 to 8 C) Industrial Temperature ( 4 to 8 C) 8P3 8S1 8A 8Y1 8Y6 8D3 Package Type 8-lead,.3" Wide, Plastic Dual Inline Package (PDIP) 8-lead,.1" Wide, Plastic Gull Wing Small Outline (JEDEC SOIC) 8-lead, 4.4 mm Body, Plastic Thin Shrink Small Outline Package (TSSOP) 8-lead, 4.9 mm x 3. mm Body, Dual Footprint, Non-leaded, Miniature Array Package (MAP) 8-lead,. mm x 3. mm Body,. mm Pitch, Ultra Thin Mini-MAP, Dual No Lead Package (DFN), (MLP x3mm) 8-lead, 1.8 mm x. mm Body, Ultra Lead Frame Land Grid Array (ULLGA) D3.7 Low Voltage (.7 to.v) 1.8 Low Voltage (1.8 to.v) Options 16 AT8A/16A/3A/64A

AT8A/16A/3A/64A 7. AT3A Ordering Information (1) Ordering Code Package Operation Range AT3A-1PU-.7 () AT3A-1PU-1.8 () AT3AN-1SU-.7 () AT3AN-1SU-1.8 () AT3A-1TU-.7 () AT3A-1TU-1.8 () () (Not recommended for new design) AT3AY1-1YU-1.8 AT3AY6-1YH-1.8 (3) AT3A-W1.8-11 (4) Notes: 1. For.7V devices used in the 4. to.v range, please refer to performance values in the AC and DC Characteristics tables.. U designates Green package + RoHS compliant. 3. H designates Green package + RoHS compliant, with NiPdAu Lead Finish. 4. Available in waffle pack and wafer form; order as SL788 for inkless wafer form. Bumped die available upon request. Please contact Serial EEPROM Marketing. 8P3 8P3 8S1 8S1 8A 8A 8Y1 8Y6 Die Sale Lead-free/Halogen-free/ Industrial Temperature ( 4 to 8 C) Industrial Temperature ( 4 to 8 C) 8P3 8S1 8A 8Y1 8Y6 Package Type 8-lead,.3" Wide, Plastic Dual Inline Package (PDIP) 8-lead,.1" Wide, Plastic Gull Wing Small Outline (JEDEC SOIC) 8-lead, 4.4 mm Body, Plastic Thin Shrink Small Outline Package (TSSOP) 8-lead, 4.9 mm x 3. mm Body, Dual Footprint, Non-leaded, Miniature Array Package (MAP) 8-lead,. mm x 3. mm Body,. mm Pitch, Ultra Thin Mini-MAP, Dual No Lead Package (DFN), (MLP x3mm).7 Low Voltage (.7 to.v) 1.8 Low Voltage (1.8 to.v) Options 17

8. AT64A Ordering Information (1) Ordering Code Package Operation Range AT64A-1PU-.7 () AT64A-1PU-1.8 () AT64AN-1SU-.7 () AT64AN-1SU-1.8 () AT64A-1TU-.7 () AT64A-1TU-1.8 () ()(Not recommended for new design) AT64AY1-1YU-1.8 AT64AY6-1YH-1.8 (3) AT64A-W1.8-11 (3) Notes: 1. For.7V devices used in the 4. to.v range, please refer to performance values in the AC and DC Characteristics tables.. U designates Green package + RoHS compliant. 3. H designates Green package + RoHS compliant, with NiPdAu Lead Finish. 4. Available in waffle pack and wafer form; order as SL788 for inkless wafer form. Bumped die available upon request. Please contact Serial EEPROM Marketing. 8P3 8P3 8S1 8S1 8A 8A 8Y1 8Y6 Die Sale Lead-free/Halogen-free/ Industrial Temperature ( 4 to 8 C) Industrial Temperature ( 4 to 8 C) Package Type 8P3 8-lead,.3" Wide, Plastic Dual Inline Package (PDIP) 8S1 8-lead,.1" Wide, Plastic Gull Wing Small Outline (JEDEC SOIC) 8A 8-lead, 4.4 mm Body, Plastic Thin Shrink Small Outline Package (TSSOP) 8Y1 8-lead, 4.9 mm x 3. mm Body, Dual Footprint, Non-leaded, Miniature Array Package (MAP) 8Y6 8-lead,. mm x 3. mm Body,. mm Pitch, Ultra Thin Mini-MAP, Dual No Lead Package (DFN), (MLP x3 mm) Options.7 Low Voltage (.7 to.v) 1.8 Low Voltage (1.8 to.v) 18 AT8A/16A/3A/64A

AT8A/16A/3A/64A 9. Packaging Information 8P3 PDIP 1 E E1 N Top View c ea End View D1 D e A A COMMON DIMENSIONS (Unit of Measure = inches) SYMBOL MIN NOM MAX NOTE A.1 A.11.13.19 b.14.18. b.4.6.7 6 b3.3.39.4 6 c.8.1.14 b3 4 PLCS b b L D.3.36.4 3 D1. 3 E.3.31.3 4 E1.4..8 3 Side View e.1 BSC ea.3 BSC 4 L.11.13.1 Notes: R 1. This drawing is for general information only; refer to JEDEC Drawing MS-1, Variation BA, for additional information.. Dimensions A and L are measured with the package seated in JEDEC seating plane Gauge GS-3. 3. D, D1 and E1 dimensions do not include mold Flash or protrusions. Mold Flash or protrusions shall not exceed.1 inch. 4. E and ea measured with the leads constrained to be perpendicular to datum.. Pointed or rounded lead tips are preferred to ease insertion. 6. b and b3 maximum dimensions do not include Dambar protrusions. Dambar protrusions shall not exceed.1 (. mm). 3 Orchard Parkway San Jose, CA 9131 TITLE 8P3, 8-lead,.3" Wide Body, Plastic Dual In-line Package (PDIP) DRAWING NO. 8P3 1/9/ REV. B 19

8S1 JEDEC SOIC C 1 E E1 N L Top View End View e B A COMMON DIMENSIONS (Unit of Measure = mm) D Side View A1 SYMBOL MIN NOM MAX NOTE A 1.3 1.7 A1.1. b.31.1 C.17. D 4.8. E1 3.81 3.99 E.79 6. e 1.7 BSC L.4 1.7 8 Note: These drawings are for general information only. Refer to JEDEC Drawing MS-1, Variation AA for proper dimensions, tolerances, datums, etc. 1/7/3 R 11 E. Cheyenne Mtn. Blvd. Colorado Springs, CO 896 TITLE 8S1, 8-lead (.1" Wide Body), Plastic Gull Wing Small Outline (JEDEC SOIC) DRAWING NO. 8S1 REV. B AT8A/16A/3A/64A

AT8A/16A/3A/64A 8A TSSOP 3 1 Pin 1 indicator this corner E1 E L1 N Top View L End View b e D Side View A A COMMON DIMENSIONS (Unit of Measure = mm) SYMBOL MIN NOM MAX NOTE D.9 3. 3.1, E 6.4 BSC E1 4.3 4.4 4. 3, A 1. A.8 1. 1. b.19.3 4 e.6 BSC L.4.6.7 L1 1. REF Notes: 1. This drawing is for general information only. Refer to JEDEC Drawing MO-13, Variation AA, for proper dimensions, tolerances, datums, etc.. Dimension D does not include mold Flash, protrusions or gate burrs. Mold Flash, protrusions and gate burrs shall not exceed.1 mm (.6 in) per side. 3. Dimension E1 does not include inter-lead Flash or protrusions. Inter-lead Flash and protrusions shall not exceed. mm (.1 in) per side. 4. Dimension b does not include Dambar protrusion. Allowable Dambar protrusion shall be.8 mm total in excess of the b dimension at maximum material condition. Dambar cannot be located on the lower radius of the foot. Minimum space between protrusion and adjacent lead is.7 mm.. Dimension D and E1 to be determined at Datum Plane H. /3/ R 3 Orchard Parkway San Jose, CA 9131 TITLE 8A, 8-lead, 4.4 mm Body, Plastic Thin Shrink Small Outline Package (TSSOP) DRAWING NO. 8A REV. B 1

8Y1 MAP PIN 1 INDEX AREA A 1 3 4 PIN 1 INDEX AREA E1 D D1 L 8 7 6 E A1 b e Top View End View Bottom View Side View A COMMON DIMENSIONS (Unit of Measure = mm) SYMBOL MIN NOM MAX NOTE A.9 A1.. D 4.7 4.9.1 E.8 3. 3. D1.8 1. 1.1 E1.8 1. 1.1 b..3.3 e.6 TYP L..6.7 /8/3 R 3 Orchard Parkway San Jose, CA 9131 TITLE 8Y1, 8-lead (4.9 x 3. mm Body) MSOP Array Package (MAP) Y1 DRAWING NO. 8Y1 REV. C AT8A/16A/3A/64A

AT8A/16A/3A/64A 8Y6 Mini MAP A D b (8X) Pin 1 Index Area E E Pin 1 ID L (8X) D A A1 e (6X) 1. REF. A3 COMMON DIMENSIONS (Unit of Measure = mm) SYMBOL MIN NOM MAX NOTE D. BSC E 3. BSC D 1.4 1. 1.6 E - - 1.4 A - -.6 A1... A - -. A3. REF L..3.4 e. BSC b...3 Notes: 1. This drawing is for general information only. Refer to JEDEC Drawing MO-9, for proper dimensions, tolerances, datums, etc.. Dimension b applies to metallized terminal and is measured between.1 mm and.3 mm from the terminal tip. If the terminal has the optional radius on the other end of the terminal, the dimension should not be measured in that radius area. 8/6/ R 3 Orchard Parkway San Jose, CA 9131 TITLE 8Y6, 8-lead. x 3. mm Body,. mm Pitch, Utlra Thin Mini-Map, Dual No Lead Package (DFN),(MLP x3) DRAWING NO. 8Y6 REV. C 3

8D3 - ULLGA D e1 8 7 6 b L PIN #1 ID E PIN #1 ID.1.1 1 3 4 A A1 e b TOP VIEW SIDE VIEW BOTTOM VIEW COMMON DIMENSIONS (Unit of Measure = mm) SYMBOL MIN NOM MAX NOTE A.4 A1.. D 1.7 1.8 1.9 E.1..3 b.1.. e.4 TYP e1 1. REF L..3.3 11/1/ R 11 E. Cheyenne Mtn. Blvd. Colorado Springs, CO 896 TITLE 8D3, 8-lead (1.8 x. mm Body) Ultra Leadframe Land Grid Array (ULLGA) D3 DRAWING NO. 8D3 REV. 4 AT8A/16A/3A/64A

AT8A/16A/3A/64A 1. Revision History Doc. Rev. Date Comments 3347M 6/7 3347L 4/7 3347K /7 Added 8D3-ULLGA to document Changed Feature descriptions on page 1 Added AT64AY6-1YU-1.8 ordering code. Added Not recommended for new design note to AT64AY1-1YU-1.8 ordering code. Implemented revision history. Added Ultra Thin description to 8-lead Mini Map package.

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