ACS108. Overvoltage protected AC switch (ACS ) Description. Features. Applications



Similar documents
STTH1R04-Y. Automotive ultrafast recovery diode. Features. Description

BTA40, BTA41 and BTB41 Series

Table 1. Absolute maximum ratings (T amb = 25 C) Symbol Parameter Value Unit. ISO C = 330 pf, R = 330 Ω : Contact discharge Air discharge

STTH2R06. High efficiency ultrafast diode. Features. Description

AN2703 Application note

BZW50. Transil, transient voltage surge suppressor (TVS) Features. Description

BTW N. 50 A 1200 V non insulated SCR thyristor. Description. Features. Applications

P6KE. Transil, transient voltage surge suppressor (TVS) Features. Description. Complies with the following standards

LM337. Three-terminal adjustable negative voltage regulators. Features. Description

ESDLIN1524BJ. Transil, transient voltage surge suppressor diode for ESD protection. Features. Description SOD323

BTA12, BTB12, T12xx. 12 A Snubberless, logic level and standard triacs. Features. Applications. Order code. Description

DDSL01. Secondary protection for DSL lines. Features. Description

EN: This Datasheet is presented by the m anufacturer. Please v isit our website for pricing and availability at ore.hu.

STN3NF06L. N-channel 60 V, 0.07 Ω, 4 A, SOT-223 STripFET II Power MOSFET. Features. Application. Description

UA741. General-purpose single operational amplifier. Features. Applications. Description. N DIP8 (plastic package)

DSL01-xxxSC5. Secondary protection for DSL lines. Features. Description. Applications. Benefits. Complies with the following standards

STTH110. High voltage ultrafast rectifier. Description. Features

ETP01-xx21. Protection for Ethernet lines. Features. Description. Applications. Benefits. Complies with the following standards

Description. Table 1. Device summary. Order code Temperature range Package Packaging Marking

Description. Table 1. Device summary

ULN2801A, ULN2802A, ULN2803A, ULN2804A

ULN2001, ULN2002 ULN2003, ULN2004

STP60NF06. N-channel 60V Ω - 60A TO-220 STripFET II Power MOSFET. General features. Description. Internal schematic diagram.

BTB04-600SL STANDARD 4A TRIAC MAIN FEATURES

BTW67 and BTW69 Series

Description. Table 1. Device summary. Order codes. TO-220 (single gauge) TO-220 (double gauge) D²PAK (tape and reel) TO-220FP

2STBN15D100. Low voltage NPN power Darlington transistor. Features. Application. Description

STP60NF06FP. N-channel 60V Ω - 30A TO-220FP STripFET II Power MOSFET. General features. Description. Internal schematic diagram.

Description SO-8. series. Furthermore, in the 8-pin configuration Very low-dropout voltage (0.2 V typ.)

STP55NF06L STB55NF06L - STB55NF06L-1

VN5R003H-E. 3 mω reverse battery protection switch. Features. Description. Application

BD238. Low voltage PNP power transistor. Features. Applications. Description. Low saturation voltage PNP transistor

BD241A BD241C. NPN power transistors. Features. Applications. Description. NPN transistors. Audio, general purpose switching and amplifier transistors

TDA W CAR RADIO AUDIO AMPLIFIER

ST High voltage fast-switching NPN power transistor. Features. Applications. Description

BD135 - BD136 BD139 - BD140

TDA2004R W stereo amplifier for car radio. Features. Description

L6234. Three phase motor driver. Features. Description

LM134-LM234-LM334. Three terminal adjustable current sources. Features. Description

MC Low noise quad operational amplifier. Features. Description

X A sensitive gate SCR. Features. Applications. Description. on-state rms current: 1.25 A. repetitive peak off-state voltage: 600 V and 800 V

STPS5L60. Power Schottky rectifier. Description. Features

STIEC45-xxAS, STIEC45-xxACS

STP10NK80ZFP STP10NK80Z - STW10NK80Z

STTH3R02QRL. Ultrafast recovery diode. Main product characteristics. Features and benefits. Description. Order codes DO-15 STTH3R02Q DO-201AD STTH3R02

STB75NF75 STP75NF75 - STP75NF75FP

STGB10NB37LZ STGP10NB37LZ

LM135-LM235-LM335. Precision temperature sensors. Features. Description

Single LNB supply and control IC DiSEqC 1.X compliant with EXTM based on the LNBH29 in a QFN16 (4x4) Description

STB4NK60Z, STB4NK60Z-1, STD4NK60Z STD4NK60Z-1, STP4NK60Z,STP4NK60ZFP

STB60N55F3, STD60N55F3, STF60N55F3 STI60N55F3, STP60N55F3, STU60N55F3

PINNING - TO220AB PIN CONFIGURATION SYMBOL

DSL03. Low capacitance TVS for high speed lines such as xdsl. Description. Features. Complies with the following standards

SPC5-FLASHER. Flash management tool for SPC56xx family. Description. Features

L78MxxAB L78MxxAC. Precision 500 ma regulators. Features. Description

AN3353 Application note

TPI. Tripolar protection for ISDN interfaces. Features. Description. Complies with following standards. Benefits

Passivated, sensitive gate triacs in a SOT54 plastic package. General purpose switching and phase control

logic level for RCD/ GFI/ LCCB applications

Order code Temperature range Package Packaging

STCS A max constant current LED driver. Features. Applications. Description

SCR, 12 A, 15mA, 500 V, SOT78. Planar passivated SCR (Silicon Controlled Rectifier) in a SOT78 plastic package.

LM2901. Low-power quad voltage comparator. Features. Description

MC34063AB, MC34063AC, MC34063EB, MC34063EC

VN05N. High side smart power solid state relay PENTAWATT. Features. Description

SM6T. Transil. Features. Description. Complies with the following standards. Peak pulse power: 600 W (10/1000 µs).

TN0023 Technical note

NE555 SA555 - SE555. General-purpose single bipolar timers. Features. Description

USBP01-5M8. ESD protection for enhanced micro USB interface. Features. Applications. Description. Complies with following standards

logic level for RCD/ GFI applications

STCS1A. 1.5 A max constant current LED driver. Features. Applications. Description

NE555 SA555 - SE555. General-purpose single bipolar timers. Features. Description

STLM20. Ultra-low current 2.4 V precision analog temperature sensor. Features. Applications

STCS2A. 2 A max constant current LED driver. Features. Applications. Description

General purpose low power phase control General purpose low power switching Solid-state relay. Symbol Parameter Conditions Min Typ Max Unit V DRM

TS555. Low-power single CMOS timer. Description. Features. The TS555 is a single CMOS timer with very low consumption:

EVL185W-LEDTV. 185 W power supply with PFC and standby supply for LED TV based on the L6564, L6599A and Viper27L. Features.

MCR08B, MCR08M. Sensitive Gate Silicon Controlled Rectifiers. Reverse Blocking Thyristors. SCRs 0.8 AMPERES RMS 200 thru 600 VOLTS

DISCRETE SEMICONDUCTORS DATA SHEET. BT151 series C Thyristors

Features. Description. Table 1. Device summary. Order code Marking Package Packing. STP110N8F6 110N8F6 TO-220 Tube

UM1613 User manual. 16-pin smartcard interface ST8034P demonstration board. Introduction

STP62NS04Z N-CHANNEL CLAMPED 12.5mΩ - 62A TO-220 FULLY PROTECTED MESH OVERLAY MOSFET

STGW40NC60V N-CHANNEL 50A - 600V - TO-247 Very Fast PowerMESH IGBT

STW20NM50 N-CHANNEL Tjmax Ω - 20ATO-247 MDmesh MOSFET

Obsolete Product(s) - Obsolete Product(s)

Obsolete Product(s) - Obsolete Product(s)

AN2991 Application note

STOD2540. PMOLED display power supply. Features. Application. Description

Description. Table 1. Device summary. Order code Package Packing

STEVAL-IEG001V2. Smart real-time vehicle tracking system. Features

AN2680 Application note

STGB8NC60KD - STGD8NC60KD STGF8NC60KD - STGP8NC60KD

FLC21-135A LOW POWER FIRE LIGHTER CIRCUIT. Application Specific Discretes A.S.D.

M24LRxx/CR95HF application software installation guide

STP80NF55-08 STB80NF55-08 STB80NF N-CHANNEL 55V Ω - 80A D2PAK/I2PAK/TO-220 STripFET II POWER MOSFET

AN4368 Application note

STW34NB20 N-CHANNEL 200V Ω - 34A TO-247 PowerMESH MOSFET

IRF740 N-CHANNEL 400V Ω - 10A TO-220 PowerMESH II MOSFET

logic level for RCD/ GFI/ LCCB applications

Transcription:

Overvoltage protected AC switch (ACS ) Datasheet - production data OUT G TO-92-6SA -8SA COM COM OUT COMG -6SN -8SN Description The belongs to the AC switch range (built with A. S. D. technology). This high performance switch can control a load of up to 0.8 A. The switch includes an overvoltage crowbar structure to absorb the inductive turn-off energy, and a gate level shifter driver to separate the digital controller from the main switch. It is triggered with a negative gate current flowing out of the gate pin. Features Enables equipment to meet IEC 61000-4-5 surge with overvoltage crowbar technology High noise immunity against static dv/dt and IEC 61000-4-4 burst Needs no external protection snubber or varistor Reduces component count by up to 80% and Interfaces directly with the micro-controller Common package tab connection supports connection of several alternating current switches on the same cooling pad V CL gives headroom before clamping then crowbar action Applications Alternating current on/off static switching in appliances and industrial control systems Driving low power high inductive or resistive loads like: relay, valve, solenoid, dispenser, pump, fan, low power motor, door lock lamp Figure 1. Functional diagram G COM OUT G OUT COM Common drive reference to connect to the mains Output to connect to the load. Gate input to connect to the controller through gate resistor Table 1. Device summary Symbol Value Unit I T(RMS) 0.8 A V DRM, V RRM 600 and 800 V I GT 10 ma : A.S.D. is a registered trademark of STMicroelectronics TM: ACS is a trademark of STMicroelectronics October 20 DocID6518 Rev 5 1/ This is information on a product in full production. www.st.com

Characteristics 1 Characteristics Table 2. Absolute maximum ratings (T amb = 25 C, unless otherwise specified) Symbol Parameter Value Unit I T(RMS) I TSM On-state rms current (full sine wave) Non repetitive surge peak on-state current (full cycle sine wave, T j initial = 25 C) TO-92 T amb = 64 C 0.45 A T lead = 76 C T amb = 76 C S = 5 cm 2 T tab = 104 C F = 60 Hz t = 16.7 ms.7 F = 50 Hz t = 20 ms 0.8 A I 2 t I²t Value for fusing t p = 10 ms 1.1 A 2 s di/dt Critical rate of rise of on-state current I G = 2xI GT, t r 100 ns F = 120 Hz T j = 125 C 100 A/µs V PP Non repetitive mains peak mains voltage (1) 2 kv I GM Peak gate current t p = 20 µs T j = 125 C 1 A V GM Peak positive gate voltage T j = 125 C 10 V P G(AV) Average gate power dissipation T j = 125 C 0.1 W T stg T j Storage junction temperature range Operating junction temperature range 1. According to test described by IEC 61000-4-5 standard and Figure 18-40 to +150-30 to +125 Table 3. Electrical characteristics (T j = 25 C, unless otherwise specified) Symbol Test conditions Quadrant Value Unit (1) I GT II - III Max. 10 ma V OUT = 12 V, R L = 33 V GT II - III Max. 1 V V GD V OUT = V DRM, R L = 3.3 kt j = 125 C II - III Min. 0.15 V I H I OUT = 100 ma Max. 10 ma I L I G = 1.2 x I GT Max. 25 ma dv/dt V OUT = 402 V, gate open, T j = 125 C Min. 2000 V/µs V OUT = 536 V, gate open, T j = 125 C Min. 400 V/µs (di/dt)c Without snubber (15 V/µs), T j = 125 C, turn-off time 20 ms Min. 2 A/ms V CL I CL = 0.1 ma, t p = 1 ms, -8 Min. 850 V I CL = 0.1 ma, t p = 1 ms, -6 Min. 650 V 1. Minimum I GT is guaranteed at 10% of I GT max A C 2/ DocID6518 Rev 5

Characteristics Table 4. Static electrical characteristics Symbol Parameter and test conditions Value Unit V (1) TM I TM = 1.1 A, t p = 500 µs T j = 25 C Max. 1.3 V V (1) t0 Threshold voltage T j = 125 C Max. 0.85 V R (1) D Dynamic resistance T j = 125 C Max. 300 m I DRM T j = 25 C 2 µa V I OUT = V DRM = V RRM Max. RRM T j = 125 C 0.2 ma 1. For both polarities of OUT referenced to COM Table 5. Thermal resistance Symbol Parameter Value Unit R th (j-l) Junction to lead (AC) TO-92 Max. 60 R th (j-t) Junction to tab (AC) Max. 25 TO-92 Max. 150 R th (j-a) Junction to ambient S = 5 cm² Max. 60 C/W Figure 2. Maximum power dissipation versus on-state rms current Figure 3. On-state rms current versus case temperature (SOT223) P (W) 0.9 α = 180 0.8 0.7 I T(RMS) (A) 0.9 0.8 0.7 =180 0.6 0.6 0.4 0.4 0.3 0.3 0.2 180 0.2 0.1 I T(RMS) (A) 0.1 0.2 0.3 0.4 0.6 0.7 0.8 0.1 T C C 0 25 50 75 100 125 DocID6518 Rev 5 3/

Characteristics Figure 4. On-state rms current versus ambient temperature (free air convection) Figure 5. Relative variation of thermal impedance junction to ambient versus pulse duration I T(RMS) (A) 0.9 0.8 0.7 TO-92 =180 1.00 K=[Z th(j-a) /R th(j-a) ] Z th(j-a) 0.6 0.10 0.4 TO-92 0.3 0.2 0.1 Single layer Printed circuit board FR4 Natural convection T a C 0 25 50 75 100 125 Copper surface t P (s) area = 5cm² 1 1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.0E+01 1.0E+02 1.0E+03 Figure 6. Relative variation of holding and latching current versus junction temperature Figure 7. Relative variation of I GT and V GT versus junction temperature 3.0 I H,I L [T j]/i H,I L [T j=25 C] 3.5 I GT, V GT [T j]/i GT, V GT, [T j=25 C] 2.5 3.0 I GT Q2 2.0 I L 2.5 I GT Q3 2.0 1.5 I H 1.5 1.0 1.0 V GT Q2-Q3 T j( C) -50-25 0 25 50 75 100 125 T j( C) -50-25 0 25 50 75 100 125 Figure 8. Surge peak on-state current versus number of cycles Figure 9. Non repetitive surge peak on-state current for a sinusoidal pulse, and corresponding value of I²t 14 12 11 10 9 8 7 6 5 4 3 2 1 0 I TSM (A) Repetitive T tab = 104 C TO-92 Repetitive T lead = 76 C Non repetitive T j initial=25 C t=20ms One cycle Number of cycles 1 10 100 1000 1.E+03 1.E+02 1.E+01 1.E+00 1.E-01 I TSM (A), I²t (A²s) I TSM t p (ms) Sinusoidal pulse, tp < 10 ms Tj initial = 25 C 1 0.10 1.00 10 I²t 4/ DocID6518 Rev 5

Characteristics Figure 10. On-state characteristics (maximum values) Figure 11. Relative variation of critical rate of decrease of main current versus junction temperature 100 I TM (A) 2.5 (di/dt) c [T j] / (di/dt) c [T j=125 C] 10 2.0 1.5 1.00 Tj=125 C Tj=25 C T j max.: V to= 0.85 V V TM(V) R d= 300 mω 0.10 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 1.0 T j ( C) 25 35 45 55 65 75 85 95 105 115 125 Figure 12. Relative variation of static dv/dt immunity versus junction temperature (1) Figure. Relative variation of leakage current versus junction temperature 5 dv/dt [T j ]/dv/dt[t j =125 C] V D=V R=536V 1.0E+00 IDRM/IRRM [Tj;V DRM/VRRM]/IDRM/IRRM [Tj=125 C;800 V] 4 3 1.0E-01 V DRM=V RRM=800 V V DRM=V RRM=600 V 2 1.0E-02 1 0 T j( C) 25 50 75 100 125 1.0E-03 Tj( C) 25 50 75 100 125 1. V D = V R = 402 V: Typical values above 5 kv/µs. Beyond equipment capability Figure 14. Relative variation of critical rate of decrease of main current (di/dt)c versus (dv/dt)c Figure 15. Thermal resistance junction to ambient versus copper surface under tab () 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 (di/dt) c [(dv/dt) c ] / Specified (di/dt) c Tj =125 C (dv/dt) c (V/µs) 0.1 1.0 1 10 140 120 100 80 60 40 20 0 R th(j-a) ( C/W) Printed circuit board FR4 copper thickness = 35 µm S CU(cm²) 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 DocID6518 Rev 5 5/

Alternating current mains switch - basic application 2 Alternating current mains switch - basic application The switch is triggered by a negative gate current flowing from the gate pin G. The switch can be driven directly by the digital controller through a resistor as shown in Figure 16. Thanks to its overvoltage protection and turn-off commutation performance, the switch can drive a small power high inductive load with neither varistor nor additional turn-off snubber. Figure 16. Typical application schematic Valve Power supply Vss MCU Vdd Rg 220 Ω V T AC Mains I T 2.1 Protection against overvoltage: the best choice is ACS In comparison with standard Triacs the is over-voltage self-protected, as specified by the new parameter V CL. This feature is useful in two operating conditions: in case of turnoff of very inductive load, and in case of surge voltage that can occur on the electrical network. 2.1.1 High inductive load switch-off: turn-off overvoltage clamping With high inductive and low rms current loads the rate of decrease of the current is very low. An overvoltage can occur when the gate current is removed and the OUT current is lower than I H. As shown in Figure 17, at the end of the last conduction half-cycle, the load current decreases 1. The load current reaches the holding current level I H 2, and the ACS turns off 3. The water valve, as an inductive load (up to 15 H), reacts as a current generator and an overvoltage is created, which is clamped by the ACS 4. The current flows through the ACS avalanche and decreases linearly to zero. During this time, the voltage across the switch is limited to the clamping voltage V CL. The energy stored in the inductance of the load is dissipated in the clamping section that is designed for this purpose. When the energy has been dissipated, the ACS voltage falls back to the mains voltage value (230 V rms, 50 Hz) 5. 6/ DocID6518 Rev 5

Alternating current mains switch - basic application Figure 17. Switching off of a high inductive load - typical clamping capability of (T amb = 25 C) IT (5 ma/div) 3 4 V CL VT (200 V/div) I T 1 I H 2 3 5 4 V CL V T 1 2 I H 100 µs/div 5 2.1.2 Alternating current mains transient voltage ruggedness The switch is able to withstand safely the AC mains transients either by clamping the low energy spikes or by breaking-over when subjected to high energy shocks, even with high turn-on current rises. The test circuit shown in Figure 18 is representative of the final application, and is also used to test the AC switch according to the IEC 61000-4-5 standard conditions. Thanks to the load limiting the current, the switch withstands the voltage spikes up to 2 kv above the peak mains voltage. The protection is based on an overvoltage crowbar technology. Actually, the breaks over safely as shown in Figure 19. The recovers its blocking voltage capability after the surge (switch off back at the next zero crossing of the current). Such non-repetitive tests can be done 10 times on each AC mains voltage polarity. Figure 18. Overvoltage ruggedness test circuit for resistive and inductive loads, T amb = 25 C (conditions equivalent to IEC 61000-4-5 standard) +2 kv surge generator C C Load 150 Ω 5 µh OUT Mains voltage 230 V rms 50 Hz V T COM I T G 220 Ω DocID6518 Rev 5 7/

Alternating current mains switch - basic application Figure 19. Typical current and voltage waveforms across the (+2 kv surge, IEC 61000-4-5 standard) V T (200 V/div) I T max = 17.2 A di T /dt = 1.8 A/µs I T (4 A/div) 500 ns/div 8/ DocID6518 Rev 5

Package information 3 Package information Epoxy meets UL94, V0 Lead-free packages In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. Figure 20. TO-92 dimension definitions A a B C F D E Ref Table 6. TO-92 dimension values Millimeters Dimensions Inches Min. Typ. Max. Min. Typ. Max. A 1.35 53 B 4.70 0.185 C 2.54 0.100 D 4.40 0.173 E 12.70 00 F 3.70 0.146 a 0 19 DocID6518 Rev 5 9/

Package information Figure 21. dimension definitions A V c A1 B e1 D B1 H E 4 1 2 3 e Ref. Table 7. dimension values Millimeters Dimensions Inches Min. Typ. Max. Min. Typ. Max. A 1.80 71 A1 2 0.10 01 04 B 0.60 0.70 0.85 24 27 33 B1 2.90 3.00 3.15 0.114 0.118 0.124 c 0.24 0.26 0.35 09 10 14 D (1) 6.30 6.50 6.70 0.248 0.256 0.264 e 2.3 90 e1 4.6 0.181 E (1) 3.30 3.50 3.70 0.8 0.146 H 6.70 7.00 7.30 0.264 0.276 0.287 V 10 max 1. Do not include mold flash or protrusions. Mold flash or protrusions shall not exceed 0.15mm (06inches) Figure 22. footprint (dimensions in mm) 3.25 1.32 5.16 7.80 1.32 2.30 0.95 10/ DocID6518 Rev 5

Ordering information 4 Ordering information Figure 23. Ordering information scheme ACS 1 08-6 S A -TR AC switch series Number of switches Current 08 = 0.8 A rms Voltage 6 = 600 V 8 = 800 V Sensitivity S = 10 ma Package A = TO-92 N = Packing TR = Tape and reel 7 (, 1000 pieces) (TO-92, 2000 pieces) AP = Ammopack (TO-92, 2000 pieces) Blank = bulk (TO-92, 2500 pieces) Table 8. Ordering information Order code Marking Package Weight Base Qty Delivery mode -6SA TO-92 0.2 g 2500 Bulk -6SA-TR ACS1 086SA TO-92 0.2 g 2000 Tape and reel -6SA-AP TO-92 0.2 g 2000 Ammopack -6SN-TR ACS 108 6SN 0.11 g 1000 Tape and reel -8SA TO-92 0.2 g 2500 Bulk -8SA-TR ACS1 088SA TO-92 0.2 g 2000 Tape and reel -8SA-AP TO-92 0.2 g 2000 Ammopack -8SN-TR ACS 108 8SN 0.11 g 1000 Tape and reel DocID6518 Rev 5 11/

Revision history 5 Revision history Table 9. Document revision history Date Revision Changes Apr_2004 1 Initial release. This datasheet covers order codes previously described in the datasheet for -6S, Doc ID 11962, Rev 3 December 2010. 21-Jun-2005 2 Marking information updated from ACSxxxx to ACS1xxx. 11-Jul-2012 3 Removed 500 V devices and added 600 V and 800 V devices. 27-Sep-20 4 Corrected typographical error in Figure 4. 31-Oct-20 5 Corrected character formatting issues in Section 2.1.1. 12/ DocID6518 Rev 5

Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ( ST ) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. ST PRODUCTS ARE NOT DESIGNED OR AUTHORIZED FOR USE IN: (A) SAFETY CRITICAL APPLICATIONS SUCH AS LIFE SUPPORTING, ACTIVE IMPLANTED DEVICES OR SYSTEMS WITH PRODUCT FUNCTIONAL SAFETY REQUIREMENTS; (B) AERONAUTIC APPLICATIONS; (C) AUTOMOTIVE APPLICATIONS OR ENVIRONMENTS, AND/OR (D) AEROSPACE APPLICATIONS OR ENVIRONMENTS. WHERE ST PRODUCTS ARE NOT DESIGNED FOR SUCH USE, THE PURCHASER SHALL USE PRODUCTS AT PURCHASER S SOLE RISK, EVEN IF ST HAS BEEN INFORMED IN WRITING OF SUCH USAGE, UNLESS A PRODUCT IS EXPRESSLY DESIGNATED BY ST AS BEING INTENDED FOR AUTOMOTIVE, AUTOMOTIVE SAFETY OR MEDICAL INDUSTRY DOMAINS ACCORDING TO ST PRODUCT DESIGN SPECIFICATIONS. PRODUCTS FORMALLY ESCC, QML OR JAN QUALIFIED ARE DEEMED SUITABLE FOR USE IN AEROSPACE BY THE CORRESPONDING GOVERNMENTAL AGENCY. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. 20 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com DocID6518 Rev 5 /