Applications Military radar Civilian radar Land mobile and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features Functional Block Diagram Frequency: 30 MHz to 3.0 GHz Output Power (P 3dB ): W at 2.4 GHz Linear Gain: 7. db at 2.4 GHz Typical PAE 3dB : 62.7% at 2.4 GHz Operating Voltage: 32 V Low thermal resistance package CW and Pulse capable 3 x 3 mm package General Description The TriQuint is a 0W (P 3dB ), Ω-input matched discrete GaN on SiC HEMT which operates from 30MHz to 3.0 GHz. The integrated input matching network enables wideband gain and power performance, while the output can be matched on board to optimize power and efficiency for any region within the band. The device is housed in an industry-standard 3 x 3 mm package that saves real estate of already spaceconstrained handheld radios. Pin Configuration Pin No. Label 9-2 V D / RF OUT 3 V G / RF IN 6 Back side Off-chip Shunt Cap for Low- Frequency Gain Source Lead-free and ROHS compliant Evaluation boards are available upon request. Ordering Information Part ECCN Description EAR99 QFN Packaged Part - EVB EAR99 0.5 3 GHz EVB Datasheet: Rev A 08-2-4 - of 2 - Disclaimer: Subject to change without notice
Absolute Maximum Ratings Parameter Breakdown Voltage (BV DG ) Gate Voltage Range (V G ) Drain Current (I D ) Gate Current (I G ) Power Dissipation (P D ) RF Input Power, CW, T = 25 C (P IN ) Value 00 V min. - to 0 V.5 A -2.5 to 4.2 ma W 27.5 dbm Channel Temperature (T CH ) 275 C Mounting Temperature (30 Seconds) 320 C Storage Temperature - to C Operation of this device outside the parameter ranges given above may cause permanent damage. These are stress ratings only, and functional operation of the device at these conditions is not implied. Recommended Operating Conditions Parameter Drain Voltage (V D ) Drain Quiescent Current (I DQ ) Peak Drain Current ( I D ) Gate Voltage (V G ) Channel Temperature (T CH ) Power Dissipation, CW (P D ) Power Dissipation, Pulse (P D ) 2 Value 32 V (Typ.) ma (Typ.) 7 ma (Typ.) -2.7 V (Typ.) 225 C (Max) 9.9 W (Max).3 W (Max) Electrical specifications are measured at specified test conditions. Specifications are not guaranteed over all recommended operating conditions. 2 00uS Pulse Width, 20% Duty Cycle RF Characterization Load Pull Performance at.0 GHz Test conditions unless otherwise noted: T A = 25 C, V D = 32 V, I DQ = ma, Pulse: 00uS Pulse Width, 20% Duty Cycle Symbol Parameter Min Typical Max Units G LIN Linear Gain, Power Tuned 6.2 db P 3dB Output Power at 3 db Gain Compression, Power Tuned.2 dbm PAE 3dB Power-Added Efficiency at 3 db Gain Compression, Efficiency Tuned 70.9 % G 3dB Gain at 3 db Compression, Power Tuned 3.2 db RF Characterization Load Pull Performance at 2.0 GHz Test conditions unless otherwise noted: T A = 25 C, V D = 32 V, I DQ = ma, Pulse: 00uS Pulse Width, 20% Duty Cycle Symbol Parameter Min Typical Max Units G LIN Linear Gain, Power Tuned 6.5 db P 3dB Output Power at 3 db Gain Compression, Power Tuned.6 dbm PAE 3dB Power-Added Efficiency at 3 db Gain Compression, Efficiency Tuned 6.7 % G 3dB Gain at 3 db Compression, Power Tuned 3.5 db Datasheet: Rev A 08-2-4-2 of 2 - Disclaimer: Subject to change without notice
RF Characterization Load Pull Performance at 2.4 GHz Test conditions unless otherwise noted: T A = 25 C, V D = 32 V, I DQ = ma, Pulse: 00uS Pulse Width, 20% Duty Cycle Symbol Parameter Min Typical Max Units G LIN Linear Gain, Power Tuned 7. db P 3dB Output Power at 3 db Gain Compression, Power Tuned.4 dbm PAE 3dB Power-Added Efficiency at 3 db Gain Compression, Efficiency Tuned 62.7 % G 3dB Gain at 3 db Compression, Power Tuned 4. db RF Characterization Load Pull Performance at 2.7 GHz Test conditions unless otherwise noted: T A = 25 C, V D = 32 V, I DQ = ma, Pulse: 00uS Pulse Width, 20% Duty Cycle Symbol Parameter Min Typical Max Units G LIN Linear Gain, Power Tuned 6.3 db P 3dB Output Power at 3 db Gain Compression, Power Tuned.5 dbm PAE 3dB Power-Added Efficiency at 3 db Gain Compression, Efficiency Tuned 63.7 % G 3dB Gain at 3 db Compression, Power Tuned 3.3 db RF Characterization Load Pull Performance at 3.0 GHz Test conditions unless otherwise noted: T A = 25 C, V D = 32 V, I DQ = ma, Pulse: 00uS Pulse Width, 20% Duty Cycle Symbol Parameter Min Typical Max Units G LIN Linear Gain, Power Tuned.4 db P 3dB Output Power at 3 db Gain Compression, Power Tuned.5 dbm PAE 3dB Power-Added Efficiency at 3 db Gain Compression, Efficiency Tuned 58.6 % G 3dB Gain at 3 db Compression, Power Tuned 2.4 db Datasheet: Rev A 08-2-4-3 of 2 - Disclaimer: Subject to change without notice
RF Characterization EVB Performance at 2.4 GHz Test conditions unless otherwise noted: T A = 25 C, V D = 32 V, I DQ = ma, Pulse: 00uS Pulse Width, 20% Duty Cycle Symbol Parameter Min Typical Max Units G LIN Linear Gain 7.0 db P 3dB Output Power at 3 db Gain Compression 9.3 W DE 3dB Drain Efficiency at 3 db Gain Compression.7 % G 3dB Gain at 3 db Compression 4.0 db RF Characterization Mismatch Ruggedness at 3.0 GHz Test conditions unless otherwise noted: T A = 25 C, V D = 32 V, I DQ = ma Driving input power is determined at 3dB Pulsed compression under matched condition at EVB output connector. Symbol Parameter Typical VSWR Impedance Mismatch Ruggedness 0: Datasheet: Rev A 08-2-4-4 of 2 - Disclaimer: Subject to change without notice
Thermal and Reliability Information - CW Parameter Test Conditions Value Units Thermal Resistance (θ JC ) Vds = 32V, Idq = ma.6 ºC/W Channel Temperature (T CH ) 85 C Case 4 C Median Lifetime (T M ) 2.5 W Pdiss, CW 2.E Hrs Thermal Resistance (θ JC ) Vds = 32V, Idq = ma 2.2 ºC/W Channel Temperature (T CH ) 85 C Case 46 C Median Lifetime (T M ) 5 W Pdiss, CW 3.89E9 Hrs Thermal Resistance (θ JC ) Vds = 32V, Idq = ma 3. ºC/W Channel Temperature (T CH ) 85 C Case 83 C Median Lifetime (T M ) 7.5 W Pdiss, CW 7.82E7 Hrs Thermal Resistance (θ JC ) Vds = 32V, Idq = ma 4.2 ºC/W Channel Temperature (T CH ) 85 C Case 227 C Median Lifetime (T M ) 0 W Pdiss, CW.54E6 Hrs Thermal Resistance (θ JC ) Vds = 32V, Idq = ma.5 ºC/W Channel Temperature (T CH ) 85 C Case 279 C Median Lifetime (T M ) 2.5 W Pdiss, CW 3.35E4 Hrs. Thermal resistance measured to bottom of package. Thermal and Reliability Information - Pulsed Parameter Test Conditions Value Units Thermal Resistance (θ JC ) Vds = 32V, Idq = ma 8.4 ºC/W Channel Temperature (T CH ) 85 C Case 69 C Median Lifetime (T M ) 0 W Pdiss, 00uS PW, 20% 3.8E8 Hrs Thermal Resistance (θ JC ) Vds = 32V, Idq = ma 8.7 ºC/W Channel Temperature (T CH ) 85 C Case 94 C Median Lifetime (T M ) 2.5 W Pdiss, 00uS PW, 20% 2.73E7 Hrs Thermal Resistance (θ JC ) Vds = 32V, Idq = ma 9. ºC/W Channel Temperature (T CH ) 85 C Case 22 C Median Lifetime (T M ) W Pdiss, 00uS PW, 20% 2.54E6 Hrs. Thermal resistance measured to bottom of package. Datasheet: Rev A 08-2-4-5 of 2 - Disclaimer: Subject to change without notice
Median Lifetime Maximum Channel Temperature Datasheet: Rev A 08-2-4-6 of 2 - Disclaimer: Subject to change without notice
Load Pull Smith Charts (, 2) RF performance that the device typically exhibits when placed in the specified impedance environment. The impedances are not the impedances of the device, they are the impedances presented to the device via an RF circuit or load-pull system. The impedances listed follow an optimized trajectory to maintain high power and high efficiency.. 32V, ma, Pulsed signal with 00uS pulse width and 20% duty cycle. 3dB compression referenced at peak gain. 2. See page 8 for load pull and source pull reference planes. Zs(fo) =.8-2.82iΩ Zs(2fo) = 38.7-2.93iΩ Zs(3fo) = 33.86+8.44iΩ Zl(2fo) = 26.76-.3iΩ Zl(3fo) = 26.4-39.5iΩ 0.4 0.5 0.6 GHz, Load-pull 0.7 0.8 0.9.2.4 Max Power is.2dbm at Z = 32.025+6.24iΩ Γ = -0.73+0.2323i Max Gain is 4dB at Z = 30.83+42.22iΩ Γ = 0.028+0.77i Max PAE is 70.9% at Z = 38.474+.97iΩ Γ = 0.4+0.4889i.6.8 2 0.3 0.2 67.7 65.7 69.7 3.9 0.. 39.9 3.6 3.3 0 0. 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 39.7.2.4.6.8 2 3 4 5-0. -0.2-0.3 Zo = Ω Peak-gain referenced -0.4 Power Gain PAE Datasheet: Rev A 08-2-4-7 of 2 - Disclaimer: Subject to change without notice
Load Pull Smith Charts (, 2) RF performance that the device typically exhibits when placed in the specified impedance environment. The impedances are not the impedances of the device, they are the impedances presented to the device via an RF circuit or load-pull system. The impedances listed follow an optimized trajectory to maintain high power and high efficiency.. 32V, ma, Pulsed signal with 00uS pulse width and 20% duty cycle. 3dB compression referenced at peak gain. 2. See page 8 for load pull and source pull reference planes. Zs(fo) = 49.35-2.4iΩ Zs(2fo) = 25.48-42.48iΩ Zs(3fo) = 46.29+6.67iΩ Zl(2fo) = 307.6-4.94iΩ Zl(3fo) = 22.75-58.28iΩ 0.4 0.5 0.6 2GHz, Load-pull 0.7 0.8 0.9.2.4 Max Power is.6dbm at Z = 9.682+9.37iΩ Γ = -0.96+0.896i Max Gain is 4.8dB at Z = 0.686+29.968iΩ Γ = -0.3248+0.6542i Max PAE is 6.7% at Z = 2.+36.465iΩ Γ = -0.932+0.6956i.6.8 2 0.3 0. 0.2 4.5 4.2 3.9.5 59. 57...3 0 0. 0.2 0.3 0.4 0.5 0.6. 0.7 0.8 0.9.2.4.6.8 2 3 4 5-0. -0.2-0.3 Zo = Ω Peak-gain referenced -0.4 Power Gain PAE Datasheet: Rev A 08-2-4-8 of 2 - Disclaimer: Subject to change without notice
Load Pull Smith Charts (, 2) RF performance that the device typically exhibits when placed in the specified impedance environment. The impedances are not the impedances of the device, they are the impedances presented to the device via an RF circuit or load-pull system. The impedances listed follow an optimized trajectory to maintain high power and high efficiency.. 32V, ma, Pulsed signal with 00uS pulse width and 20% duty cycle. 3dB compression referenced at peak gain. 2. See page 8 for load pull and source pull reference planes. 2.4GHz, Load-pull Zs(fo) = 52.24+0.73iΩ Zs(2fo) = 9.84-.07iΩ Zs(3fo) = 42.02-7.8iΩ Zl(2fo) = 6.+.34iΩ Zl(3fo) = 29.82-7.89iΩ 0.5 0.6 0.7 0.8 0.9 Max Power is.4dbm at Z = 8.66+.298iΩ Γ = -0.4278+0.2366i Max Gain is 4.4dB at Z =.289+22.93iΩ Γ = -0.373+0.4667i Max PAE is 62.7% at Z = 3.992+28.6iΩ Γ = -0.3092+0.576i.2 0.4 0.3 0.2 4. 3.8 3.5 3.2 60.8 58.8 56.8 54.8 0..4.2 39.8 0 0. 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9.2.4 Zo = Ω Peak-gain referenced -0. Power Gain PAE Datasheet: Rev A 08-2-4-9 of 2 - Disclaimer: Subject to change without notice
Load Pull Smith Charts (, 2) RF performance that the device typically exhibits when placed in the specified impedance environment. The impedances are not the impedances of the device, they are the impedances presented to the device via an RF circuit or load-pull system. The impedances listed follow an optimized trajectory to maintain high power and high efficiency.. 32V, ma, Pulsed signal with 00uS pulse width and 20% duty cycle. 3dB compression referenced at peak gain. 2. See page 8 for load pull and source pull reference planes. 2.7GHz, Load-pull Zs(fo) = 47.4+2.82iΩ Zs(2fo) = 26.43-27.99iΩ Zs(3fo) = 27.3-2.6iΩ Zl(2fo) = 0.59-87.56iΩ Zl(3fo) = 24.54-6.9iΩ 0.5 0.6 0.7 0.8 0.9 Max Power is.5dbm at Z = 8.277+.064iΩ Γ = -0.427+0.233i Max Gain is 3.6dB at Z = 3.80+6.0iΩ Γ = -0.47+0.37i Max PAE is 63.7% at Z = 2.205+20.42iΩ Γ = -0.5+0.47i.2 0.4 0.3 62.2 0.2 3 3.3 3.6 60.2 58.2 56.2 54.2 0. 2.7.4.2 0 0. 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9.2.4 Zo = Ω Peak-gain referenced -0. Power Gain PAE Datasheet: Rev A 08-2-4-0 of 2 - Disclaimer: Subject to change without notice
Load Pull Smith Charts (, 2) RF performance that the device typically exhibits when placed in the specified impedance environment. The impedances are not the impedances of the device, they are the impedances presented to the device via an RF circuit or load-pull system. The impedances listed follow an optimized trajectory to maintain high power and high efficiency.. 32V, ma, Pulsed signal with 00uS pulse width and 20% duty cycle. 3dB compression referenced at peak gain. 2. See page 8 for load pull and source pull reference planes. 3GHz, Load-pull Zs(fo) = 49.59-.28iΩ Zs(2fo) = 44+0.4iΩ Zs(3fo) = 25.67-8.3iΩ Zl(2fo) = 65.8+44.62iΩ Zl(3fo) = 38.87-26.64iΩ 0.5 0.6 0.7 0.8 0.9 Max Power is.5dbm at Z = 8.327+.73iΩ Γ = -0.426+0.244i Max Gain is 2.4dB at Z = 2.252+20.075iΩ Γ = -0.5+0.4692i Max PAE is 58.6% at Z = 0.574+22.744iΩ Γ = -0.4469+0.5433i.2 0.4 0.3 0.2 2.3 2.7 57.4.4 53.4 0..4.2 0 0. 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9.2.4 Zo = Ω Peak-gain referenced -0. Power Gain PAE Datasheet: Rev A 08-2-4 - of 2 - Disclaimer: Subject to change without notice
Typical Performance Power Tuned (,2,3). Pulsed signal with 00uS pulse width and 20% duty cycle 2. See page 8 for load pull and source pull reference planes. 3. Performance is measured at device reference planes. Gain [db] Gain [db] 7.0 6.5 6.0.5.0 4.5 4.0 3.5 2.5 Zs(fo) =.2-j2.82Ω Zl (fo)= 32.0+j6.2Ω Zl(2fo) = 26.8-j.3Ω Zl(2fo) = 26.-j39.5Ω Gain and PAE vs. Pout GHz; Vds= 32V; Idq = ma; Pulse: 00us, 20%; Power Tuned 2.0 25 27 29 3 33 35 37 39 4 Pout [dbm] Gain and PAE vs. Pout 2.4GHz; Vds= 32V; Idq = ma; Pulse: 00us, 20%; Power Tuned 60 35 30 25 20 0 PAE [%] Gain [db] 7.0 6.5 6.0.5.0 4.5 4.0 3.5 2.5 Gain and PAE vs. Pout 2GHz; Vds= 32V; Idq = ma; Pulse: 00us, 20%; Power Tuned Zs(fo) = 49.4-j2.Ω Zl (fo)= 9.7+j9.37Ω Zl(2fo) = 307-jΩ Zl(2fo) = 22.8-j58.3Ω 2.0 5 25 26 27 28 29 30 3 32 33 34 35 36 37 38 39 4 Pout [dbm] 8 7.5 60 7 7.0 7 6.5 6 6.0 Zs(fo) = 6 52.2+j0.73Ω 35 Zs(fo) = Zl (fo)= 8.2+j.3Ω.5 47.4+j2.82Ω Zl(2fo) = 6.+j.3Ω Zl (fo)= 8.3+j.Ω 30 Zl(2fo) = 29.8-j7.89Ω.0 Zl(2fo) = -j87.6ω 35 Zl(2fo) = 24.5-j6.9Ω 25 4.5 30 4 20 4.0 25 4 3.5 20 3 0 3 5 2.5 0 25 26 27 28 29 30 3 32 33 34 35 36 37 38 39 4 25 26 27 28 29 30 3 32 33 34 35 36 37 38 39 4 Pout [dbm] Gain and PAE vs. Pout Pout [dbm] Gain [db] 6.0.5.0 4.5 4.0 3.5 2.5 2.0.5 PAE [%] Gain [db] 3GHz; Vds= 32V; Idq = ma; Pulse: 00us, 20%; Power Tuned Zs(fo) = 49.6-j.28Ω Zl (fo)= 8.3+j.7Ω Zl(2fo) = 65.2+j44.6Ω Zl(2fo) = 38.9-j26.6Ω.0 5 25 26 27 28 29 30 3 32 33 34 35 36 37 38 39 4 Pout [dbm] Gain and PAE vs. Pout 2.7GHz; Vds= 32V; Idq = ma; Pulse: 00us, 20%; Power Tuned 35 30 25 20 0 PAE [%] 35 30 25 20 0 PAE [%] PAE [%] Datasheet: Rev A 08-2-4-2 of 2 - Disclaimer: Subject to change without notice
Typical Performance Efficiency Tuned (,2,3). Pulsed signal with 00uS pulse width and 20% duty cycle 2. See page 8 for load pull and source pull reference planes. Gain [db] 6.0.5.0 4.5 4.0 3.5 2.5 2.0.5 Gain and PAE vs. Pout 3GHz; Vds= 32V; Idq = ma; Pulse: 00us, 20%; Efficiency Tuned Zs(fo) = 49.6-j.28Ω Zl (fo)= 0.6+j22.7Ω Zl(2fo) = 65.2+j44.6Ω Zl(2fo) = 38.9-j26.6Ω.0 0 25 26 27 28 29 30 3 32 33 34 35 36 37 38 39 Pout [dbm] 60 35 30 25 20 PAE [%] Gain [db] 8.0 7.5 7.0 6.5 6.0.5.0 4.5 4.0 3.5 2.5 2.0 Gain and PAE vs. Pout 2GHz; Vds= 32V; Idq = ma; Pulse: 00us, 20%; Efficiency Tuned Zs(fo) = 49.4-j2.Ω Zl (fo)= 2.6+j36.5Ω Zl(2fo) = 307-jΩ Zl(2fo) = 22.8-j58.3Ω 20 22 24 26 28 30 32 34 36 38 Pout [dbm] 65 60 35 30 25 20 0 5 PAE [%] Gain [db] 8.0 7.5 7.0 6.5 6.0.5.0 4.5 4.0 3.5 2.5 2.0 Gain and PAE vs. Pout 2.4GHz; Vds= 32V; Idq = ma; Pulse: 00us, 20%; Efficiency Tuned Zs(fo) = 52.2+j0.73Ω Zl (fo)= 4.0+j28.2Ω Zl(2fo) = 6.-j.3Ω Zl(2fo) = 29.8-j7.89Ω 25 27 29 3 33 35 37 39 Pout [dbm] 70 65 60 35 30 25 20 0 PAE [%] Gain [db] 8.0 7.5 7.0 6.5 6.0.5.0 4.5 4.0 3.5 2.5 2.0 Gain and PAE vs. Pout 2.7GHz; Vds= 32V; Idq = ma; Pulse: 00us, 20%; Efficiency Tuned Zs(fo) = 47.4+j2.82Ω Zl (fo)= 2.2+j20.Ω Zl(2fo) = -j87.6ω Zl(2fo) = 24.5-j6.9Ω 24 26 28 30 32 34 36 38 Pout [dbm] 70 65 60 35 30 25 20 0 PAE [%] Gain [db] 8.0 7.5 7.0 6.5 6.0.5.0 4.5 4.0 3.5 2.5 2.0 Gain and PAE vs. Pout GHz; Vds= 32V; Idq = ma; Pulse: 00us, 20%; Efficiency Tuned Zs(fo) =.2-j2.82Ω Zl (fo)= 38.5+j5.0Ω Zl(2fo) = 26.8-j.3Ω Zl(2fo) = 26.-j39.5Ω 26 27 28 29 30 3 32 33 34 35 36 37 38 Pout [dbm] 75 70 65 60 35 30 25 20 PAE [%] Datasheet: Rev A 08-2-4-3 of 2 - Disclaimer: Subject to change without notice
Evaluation Board Performance Over Temperature Performance measured on TriQuint s 0.5 GHz to 3 GHz Evaluation Board (, 2).0 P3dB vs. Frequency vs. Temperature 7.0 G3dB vs. Frequency vs. Temperature 0.5 6.0 P3dB [W] 0.0 9.5 9.0 8.5 8.0 7.5 - C -20 C 0 C 25 C C 65 C 7.0.0.2.4.6.8 2.0 2.2 2.4 2.6 2.8 3.0 Frequency [GHz] 85 C G3dB [db].0 4.0 2.0.0 - C -20 C 0 C 25 C C 65 C 85 C 0.0.0.2.4.6.8 2.0 2.2 2.4 2.6 2.8 3.0 Frequency [GHz] PAE3dB [%] 70 65 60 PAE3dB vs. Frequency vs. Temperature - C -20 C 0 C 25 C C 65 C 85 C.0.2.4.6.8 2.0 2.2 2.4 2.6 2.8 3.0 Frequency [GHz]. Test Conditions: V DS = 32 V, I DQ = ma 2. Test Signal: Pulse Width = 00 µs, Duty Cycle = 20% Datasheet: Rev A 08-2-4-4 of 2 - Disclaimer: Subject to change without notice
(, 2) Evaluation Board Performance At 25 C Performance measured on TriQuint s 0.5 GHz to 3.0 GHz Evaluation Board P3dB [W].0 0.6 0.2 9.8 9.4 9.0 8.6 P3dB and G3dB vs. Frequency @ 25 C.0 4.6 4.2 3.8 3.4 2.6 G3dB [db] PAE3dB [%] 62 60 58 56 54 52 PAE3dB vs. Frequency @ 25 C 8.2 2.2 7.8 7.4 P3dB G3dB.8.4 48 46 7.0.2.4.6.8 2 2.2 2.4 2.6 2.8 3 Frequency [GHz].0 44.2.4.6.8 2 2.2 2.4 2.6 2.8 3 Frequency [GHz]. Test Conditions: V DS = 32 V, I DQ = ma, 25 C 2. Test Signal: Pulse Width = 00 µs, Duty Cycle = 20 % Datasheet: Rev A 08-2-4 - of 2 - Disclaimer: Subject to change without notice
Application Circuit Bias-up Procedure Set gate voltage (V G ) to -5.0V Set drain voltage (V D ) to 32 V Slowly increase V G until quiescent I D is ma. Apply RF signal Bias-down Procedure Turn off RF signal Turn off V D and wait second to allow drain capacitor dissipation Turn off V G Datasheet: Rev A 08-2-4 204 TriQuint - 6 of 2 - Disclaimer: Subject to change without notice www.triquint.com
Evaluation Board Layout Top RF layer is 0.020 thick Rogers RO43B, ɛ r = 3.48. The pad pattern shown has been developed and tested for optimized assembly at TriQuint Semiconductor. The PCB land pattern has been developed to accommodate lead and package tolerances. C9 C7 C5 R6 C8 L4 R3 C6 L3 R2 L7 R5 L2 L6 R4 RF IN C R L L5 C2 RF OUT C4 C3 Bill of Materials Reference Design Value Qty Manufacturer Part Number R 0Ω Generic 0603 R2, R3, R4, R5 0Ω 4 Generic 0603 R6 kω Generic 0603 C, C2, C5, C6 20pF 4 Dielectric Labs C08BL242X-5UN-X0B C3 0.5pF ATC 600S005BT2XT C4, C7 0uF 2 TDK C632X5R0J06M30AC C8 uf AVX 82C05KAT2A C9 220uF United Chemicon EMVY0ADA22MJA0G L.6nH CoilCraft 0603HC-N6XJLU L2, L5 82nH 2 CoilCraft 008CS-820XGLB L3, L6 00nH 2 CoilCraft 008CS-0XGLB L4, L7 900nH 2 CoilCraft 008AF-90XJLB Datasheet: Rev A 08-2-4-7 of 2 - Disclaimer: Subject to change without notice
Pin Layout Pin Description Pin Symbol Description 9, 0,, 2 V D / RF OUT Drain voltage / RF Output to be matched to ohms; see EVB Layout on page 7 as an example. 3 V G / RF IN Gate voltage / RF Input to be matched to ohms; see EVB Layout on page 7 as an example. 6 Off-Chip Cap Off-chip cap to extend low frequency gain. Back side Souce Source connected to ground Thermal resistance measured to back side of package The will be marked with the TGF30 designator and a lot code marked below the part designator The YY represents the last two digits of the calendar year the part was manufactured, the WW is the work week of the assembly lot start, and the MXXX is the production lot number. Datasheet: Rev A 08-2-4-8 of 2 - Disclaimer: Subject to change without notice
Mechanical Information All dimensions are in milimeters. Note: Unless otherwise noted, all dimention tolerances are +/-0.27 mm. This package is lead-free/rohs-compliant. The plating material on the leads is NiAu. It is compatible with both lead-free (maximum 260 C reflow temperature) and tin-lead (maximum 2 C reflow temperature) soldering processes. Datasheet: Rev A 08-2-4-9 of 2 - Disclaimer: Subject to change without notice
Product Compliance Information ESD Sensitivity Ratings ECCN Caution! ESD-Sensitive Sensitive Device US Department of Commerce EAR99 Solderability Compatible with the latest version of J-STD-020, Lead free solder, 260 C RoHs Compliance This part is compliant with EU 2002/95/EC RoHS ESD Rating: TBD directive (Restrictions on the Use of Certain Hazardous Value: Passes TBD V min. Substances in Electrical and Electronic Equipment). Test: Human Body Model (HBM) Standard: JEDEC Standard JESD22-A4 This product also has the following attributes: Lead Free MSL Rating Halogen Free (Chlorine, Bromine) Antimony Free The part is rated Moisture Sensitivity Level 3 at 260 C per TBBP-A (C H 2 Br 4 0 2 ) Free JEDEC standard IPC/JEDEC J-STD-020. PFOS Free SVHC Free Recommended Soldering Temperature Profile Datasheet: Rev A 08-2-4 204 TriQuint - 20 of 2 - Disclaimer: Subject to change without notice www.triquint.com
Contact Information For the latest specifications, additional product information, worldwide sales and distribution locations, and information about TriQuint: Web: www.triquint.com Tel: +.972.994.8465 Email: info-sales@triquint.com Fax: +.972.994.84 For technical questions and application information: Email: info-products@triquint.com Important Notice The information contained herein is believed to be reliable. TriQuint makes no warranties regarding the information contained herein. TriQuint assumes no responsibility or liability whatsoever for any of the information contained herein. TriQuint assumes no responsibility or liability whatsoever for the use of the information contained herein. The information contained herein is provided "AS IS, WHERE IS" and with all faults, and the entire risk associated with such information is entirely with the user. All information contained herein is subject to change without notice. Customers should obtain and verify the latest relevant information before placing orders for TriQuint products. The information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any patent rights, licenses, or any other intellectual property rights, whether with regard to such information itself or anything described by such information. TriQuint products are not warranted or authorized for use as critical components in medical, life-saving, or lifesustaining applications, or other applications where a failure would reasonably be expected to cause severe personal injury or death. Datasheet: Rev A 08-2-4-2 of 2 - Disclaimer: Subject to change without notice