N-Channel -V (D-S) 75 C MOSFET SUD7N-4P PRODUCT SUMMARY V DS (V) r DS(on) ( ) (A) a.37 @ V GS = V 37.6 @ V GS = 4.5 V 9 TO-5 D FEATURES TrenchFET Power MOSFET 75 C Junction Temperature PWM Optimized for High Efficiency % R g Tested APPLICATIONS Synchronous Buck Converter - Low Side Synchronous Rectifier - Secondary Rectifier Drain Connected to Tab G G D S Top View Order Number: SUD7N-4P S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (T A = 5 C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Unit Drain-Source Voltage V DS Gate-Source Voltage V GS T A = 5 C 37 a Continuous Drain Current a T C = 5 C 7 b Pulsed Drain Current M V A Continuous Source Current (Diode Conduction) a I S 37 Maximum Power Dissipation T A = 5 C T C = 5 C P D 93 W 8.3 a Operating Junction and Storage Temperature Range T J, T stg -55 to 75 C THERMAL RESISTANCE RATINGS Maximum Junction-to-Ambientto a Parameter Symbol Typical Maximum Unit t sec Steady State 5 8 R thja 4 5 C/W Maximum Junction-to-Case R thjc.3.6 Notes a. Surface Mounted on FR4 Board, t sec. b. Limited by package Document Number: 796 S-374 Rev. B, 8-Aug-3
SUD7N-4P SPECIFICATIONS (T J = 5 C UNLESS OTHERWISE NOTED) Static Parameter Symbol Test Condition Min Typ a Max Unit Drain-Source Breakdown Voltage V (BR)DSS V GS = V, = 5 A Gate Threshold Voltage V GS(th) V DS = V GS, = 5 A.8 3. Gate-Body Leakage I GSS V DS = V, V GS = V na Zero Gate Voltage Drain Current SS V DS = 6 V, V GS = V, T J = 5 C 5 V DS = 6 V, V GS = V On-State Drain Current b (on) V DS = 5 V, V GS = V 5 A V GS = V, = A.8.37 Drain-Source On-State Resistance b r DS(on) V GS = V, = A, T J = 5 C.5 V GS = 4.5 V, = A.47.6 V A Forward Transconductance b g fs V DS = 5 V, = A 5 S Dynamic a Input Capacitance C iss 45 Output Capacitance C oss V GS = V, V DS = V, f = MHz 5 pf Reverse Transfer Capacitance C rss 8 Gate Resistance R g.5..8 Total Gate Charge c Q g 34 53 Gate-Drain Charge c Q gd Gate-Source Charge c Q gs V DS = V, V GS = 4.5 V, = 5 A nc Turn-On Delay Time c t d(on) 5 5 Rise Time c t r VDD V = V, R L =. Turn-Off Delay Time c t d(off) 5 A, V GEN = V, R G =.5 35 55 Fall Time c t f 5 5 Source-Drain Diode Ratings and Characteristic (T C = 5 C) Pulsed Current I SM A Diode Forward Voltage b V SD I F = 5 A, V GS = V..5 V Source-Drain Reverse Recovery Time t rr I F = 5 A, di/dt = A/ s 45 9 ns Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width 3 s, duty cycle %. c. Independent of operating temperature. ns TYPICAL CHARACTERISTICS (5 C UNLESS NOTED) 6 Output Characteristics 4 Transfer Characteristics 4 8 6 4 V GS = thru 4 V 3 V 8 6 4 T C = 5 C V 4 6 8 V DS - Drain-to-Source Voltage (V) 5 C -55 C..5..5..5 3. 3.5 4. V GS - Gate-to-Source Voltage (V) Document Number: 796 S-374 Rev. B, 8-Aug-3
SUD7N-4P TYPICAL CHARACTERISTICS (5 C UNLESS NOTED) Transconductance.7 On-Resistance vs. Drain Current T C = -55 C - Transconductance (S) g fs C - Capacitance (pf) 5 C 8 5 C 6 4 3 4 5 6 5 4 3 C rss Capacitance C iss C oss - Gate-to-Source Voltage (V) rds(on) - On-Resistance ( ) V GS.6.5.4.3... 4 6 8 8 6 4 V DS = V = 5 A Gate Charge V GS = 4.5 V V GS = V 4 8 6 5 3 45 6 75 V DS - Drain-to-Source Voltage (V) Q g - Total Gate Charge (nc).6 On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage V GS = V = 3 A.4 rds(on) - On-Resistance ( ) (Normalized)...8 - Source Current (A) I S T J = 5 C T J = 5 C.6-5 -5 5 5 75 5 5 75.3.6.9..5 T J - Junction Temperature ( C) V SD - Source-to-Drain Voltage (V) Document Number: 796 S-374 Rev. B, 8-Aug-3 3
SUD7N-4P THERMAL RATINGS 4 Maximum Drain Current vs. Ambiemt Temperature Safe Operating Area 3 Limited by r DS(on), s 4 6 8. T A = 5 C Single Pulse ms ms ms s s s dc 5 5 75 5 5 75 T A - Ambient Temperature ( C).. V DS - Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance. Duty Cycle =.5....5 Single Pulse. -4-3 - - Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Case Normalized Effective Transient Thermal Impedance. Duty Cycle =.5....5 Single Pulse. -4-3 - - Square Wave Pulse Duration (sec) 4 Document Number: 796 S-374 Rev. B, 8-Aug-3
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