Phototriac, Zero Crossing, 1.5 kv/μs dv/dt, 600 V
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1 Phototriac, Zero Crossing,.5 kv/μs dv/dt, 600 V SMD FEATURES 500 V/μs dv/dt minimum 600 V blocking voltage A 6 MT2 00 ma on-state current DIP i79030_4 C 2 NC 3 ZCC* 4 MT *Zero crossing circuit 5 V D E NC Zero crossing detector Low input trigger current 6 pin DIP package Material categorization: For definitions of compliance please see i DESCRIPTION The VO3062 and VO3063 triac driver family consists of a GaAs infrared LED optically coupled to a monolithic photosensitive zero crossing triac detector chip. The 600 V blocking voltage permits control of off-line voltages up to 240 V AC, with a safety factor of more than two, and is sufficient for as much as 380 V. APPLICATIONS Household appliances Triac drive/ac motor drives Solenoid/valve controls Office automation equipment/machine Temperature (HVAC)/lighting controls Switching power supply AGENCY APPROVALS UL577, file no. E52744 system code H cul - file no. E52744, equivalent to CSA bulletin 5A DIN EN (VDE ) available with option ORDERING INFORMATION V O # - X 0 # # T DIP Option 6 PART NUMBER PACKAGE OPTION TAPE AND REEL 7.62 mm Option mm Option 9 > 0.7 mm > 0. mm AGENCY CERTIFIED/PACKAGE TRIGGER, CURRENT I FT (ma) UL, cul 5 0 DIP-6 VO3063 VO3062 DIP-6, 400 mil, option 6 VO3063-X006 VO3062-X006 SMD-6, option 7 VO3063-X007T VO3062-X007T SMD-6, option 9 VO3063-X009T - VDE, UL, cul 5 0 DIP-6, 400 mil, option 6 VO3063-X06 VO3062-X06 SMD-6, option 7 VO3063-X07T VO3062-X07T Rev. 2.0, 8-Apr-3 Document Number: 83748
2 ABSOLUTE MAXIMUM RATINGS (T amb = 25 C, unless otherwise specified) PARAMETER TEST CONDITION PART SYMBOL VALUE UNIT INPUT Reverse voltage V R 6 V Forward current - continuous I F 60 ma Power dissipation P diss 00 mw OUTPUT Off state output terminal voltage V DRM 600 V Peak non-repetitive surge current PW = 00 μs, 20 pps I TSM A Power dissipation P diss 200 mw On-state RMS current I T(RMS) 00 ma COUPLER Isolation test voltage t = s V ISO 5300 V RMS Total power dissipation P tot 300 mw Operating temperature range T amb - 55 to + 00 C Storage temperature range T stg - 55 to + 50 C Soldering temperature () maximum 0 s T sld 260 C Notes Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability. () Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through hole devices (DIP) Assembly Instructions ( THERMAL CHARACTERISTICS PARAMETER SYMBOL VALUE UNIT Maximum LED junction temperature T jmax. 25 C Maximum output die junction temperature T jmax. 25 C T A Thermal resistance, junction emitter to board JEB 50 C/W T C θ CA Package Thermal resistance, junction emitter to case JEC 39 C/W θ DC θ EC Thermal resistance, junction detector to board JDB 78 C/W T JD θ DE T JE Thermal resistance, junction detector to case JDC 03 C/W θ DB θ EB Thermal resistance, junction emitter to junction detector JED 496 C/W T B θ BA Thermal resistance, case to ambient CA 3563 C/W 9996 T A Note The thermal model is represented in the thermal network below. Each resistance value given in this model can be used to calculate the temperatures at each node for a given operating condition. The thermal resistance from board to ambient will be dependent on the type of PCB, layout and thickness of copper traces. For a detailed explanation of the thermal model, please reference Vishay s Thermal Characteristics of Optocouplers application note. Rev. 2.0, 8-Apr-3 2 Document Number: 83748
3 ELECTRICAL CHARACTERISTICS (T amb = 25 C, unless otherwise specified) PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT INPUT Reverse current V R = 6 V I R 0 μa Forward voltage I F = 30 ma V F.2.5 V OUTPUT Leakage with LED off, either direction V DRM = 600 V I DRM na Critical rate of rise off-state voltage V D = 400 V dv/dt V/μs COUPLER LED trigger current, VO3063 I FT 5 ma current required to latch output VO3062 I FT 0 ma Peak on-state voltage, either direction I TM = 00 ma Peak, I F = Rated I FT V TM.7 3 V Holding current, either direction I H 200 μa Inhibit voltage (MT-MT2 voltage above which device will not trigger) V INH 2 22 V Leakage in inhibited state I F = 0 ma maximum, at rated V DRM, off state V DRM μa Note Typical values are characteristics of the device and are the result of engineering evaluations. Typical values are for information only and are not part of the testing requirements. SAFETY AND INSULATION RATINGS PARAMETER SYMBOL MIN. TYP. MAX. UNIT Climatic classification (according to IEC 68 part ) 55/00/2 Pollution degree (DIN VDE 009) 2 Comparative tracking index CTI 75 Peak transient overvoltage V IOTM 8000 V peak Peak working insulation voltage V IORM 890 V peak Isolation resistance at T amb = 00 C, V DC = 500 V R IO 0 Isolation resistance at T amb = 25 C, V DC = 500 V R IO 0 2 Partial discharge test voltage (method a, V pd = V IORM x.875) V pd 325 V peak Safety rating - power P SO 400 mw Safety rating - input current I SI 50 ma Safety rating - temperature T SI 65 C Clearance distance (Standard DIP-6) 7 mm Creepage distance (Standard DIP-6) 7 mm Clearance distance (400 mil DIP-6) 8 mm Creepage distance (400 mil DIP-6) 8 mm Note According to DIN EN (see figure 4). This optocoupler is suitable for safe electrical isolation only within the safety ratings. Compliance with the safety ratings shall be ensured by means of suitable protective circuits. Rev. 2.0, 8-Apr-3 3 Document Number: 83748
4 TYPICAL CHARACTERISTICS (T amb = 25 C, unless otherwise specified) V F - Forward Voltage (V) T A = - 40 C.2 T A = 25 C. T A = 85 C I F - Forward Current (ma) Fig. - Forward Voltage vs. Forward Current Trigger Current Fig. 4 - Normalized Trigger Current vs. Temperature I lkg (na) 00 0 Turn-on Time (µs) LED Current (ma) Fig. 2 - Off-State Leakage Current vs. Temperature Fig. 5 - Turn-on Time vs. LED Current On-State Current I TM (ma) On-State Voltage V TM (V) Holding Current Fig. 3 - On-State Current vs. V TM Fig. 6 - Normalized Holding Current vs. Temperature Rev. 2.0, 8-Apr-3 4 Document Number: 83748
5 Turn-on Time (µs) I FT (ma) Pulse Width (µs) Fig. 7 - Turn-on Time vs. Temperature Fig. 8 - Trigger Current vs. Pulse Width PACKAGE DIMENSIONS in millimeters 3 2 Pin one ID ISO method A min i typ typ typ typ. 3 to to Option 6 Option 7 Option max ± ± min. 0.7 min. 4.3 ± min. 0. ± ± max. 0.6 min. 0.6 typ R R Rev. 2.0, 8-Apr-3 5 Document Number: 83748
6 PACKAGE MARKING (example) VO3062 V YWW H 68 Notes The VDE logo is only marked on option parts. Tape and reel suffix (T) is not part of the package marking. Rev. 2.0, 8-Apr-3 6 Document Number: 83748
7 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, Vishay ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer s technical experts. Product specifications do not expand or otherwise modify Vishay s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Revision: 3-Jun-6 Document Number: 9000
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DIMENSIONS in millimeters Power Resistor for Mounting onto a Heatsink Thick Film Technology FEATURES 800 W at 85 C bottom case temperature Wide resistance range: 0.3 to 900 k E24 series Non inductive Easy
Aluminum Capacitors Solid Axial
SAL-A End of Life. Last Available Purchase Date is -December- Radial higher CV/volume Fig. QUICK REFERENCE DATA DESCRIPTION VALUE Maximum case size (Ø D x L in mm) 6.7 x. to.9 x. Rated capacitance range
Optocoupler, Phototransistor Output (Dual, Quad Channel)
Optocoupler, Phototransistor Output (Dual, Quad hannel) Dual hannel 2 8 7 E FETURES urrent transfer ratio at I F = m 3 4 6 5 E 6 E Isolation test voltage, 5300 V RMS ompliant to RoHS Directive 2002/95/E
PINNING - TO220AB PIN CONFIGURATION SYMBOL
BTA4 series GENERAL DESCRIPTION QUICK REFERENCE DATA Passivated triacs in a plastic envelope, SYMBOL PARAMETER MAX. MAX. UNIT intended for use in applications requiring high bidirectional transient and
High-speed switching diodes. Type number Package Configuration Package NXP JEITA JEDEC
Rev. 8 18 November 2010 Product data sheet 1. Product profile 1.1 General description, encapsulated in small Surface-Mounted Device (SMD) plastic packages. Table 1. Product overview Type number Package
SCR, 12 A, 15mA, 500 V, SOT78. Planar passivated SCR (Silicon Controlled Rectifier) in a SOT78 plastic package.
Rev. 5 2 March 29 Product data sheet 1. Product profile 1.1 General description Planar passivated SCR (Silicon Controlled Rectifier) in a SOT78 plastic package. 1.2 Features and benefits High reliability
AC Line Rated Ceramic Disc Capacitors Class X1, 760 V AC, Class Y1, 500 V AC
AC Line Rated Ceramic Disc Capacitors Class X1, 760 V AC, Class Y1, 500 V AC QUICK REFERENCE DATA DESCRIPTION VALUE Ceramic Class 1 2 Ceramic Dielectric U2J U2J Y5S, Y5U Y5S, Y5U Voltage (V AC ) 500 760
MCR08B, MCR08M. Sensitive Gate Silicon Controlled Rectifiers. Reverse Blocking Thyristors. SCRs 0.8 AMPERES RMS 200 thru 600 VOLTS
MCR8B, MCR8M Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors PNPN devices designed for line powered consumer applications such as relay and lamp drivers, small motor controls,
N-Channel 100 V (D-S) MOSFET
Si4DS N-Channel V (D-S) MOSFET MOSFET PRODUCT SUMMARY V DS (V) R DS(on) ( ) I D (A) a Q g (Typ.).4 at V GS = V..67 at V GS = 6 V..9 nc.78 at V GS = 4.5 V.7 FEATURES TrenchFET Power MOSFET % R g Tested
Power MOSFET. IRF9520PbF SiHF9520-E3 IRF9520 SiHF9520. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS - 100 V Gate-Source Voltage V GS ± 20
Power MOSFET PRODUCT SUMMARY (V) 100 R DS(on) ( ) = 10 V 0.60 Q g (Max.) (nc) 18 Q gs (nc) 3.0 Q gd (nc) 9.0 Configuration Single TO220AB G DS ORDERING INFORMATION Package Lead (Pb)free SnPb G S D PChannel
Low Current SMD LED PLCC-2
Low Current SMD LED PLCC-2 VLMC31. 19225 DESCRIPTION These new devices have been designed to meet the increasing demand for low current SMD LEDs. The package of the VLMC31. is the PLCC-2 (equivalent to
Features. Applications. Truth Table. Close
ASSR-8, ASSR-9 and ASSR-8 Form A, Solid State Relay (Photo MOSFET) (0V/0.A/0Ω) Data Sheet Description The ASSR-XX Series consists of an AlGaAs infrared light-emitting diode (LED) input stage optically
ESCC 4001/026 Qualified ( ) High Stability Thick Film Resistor Chips
ESCC 4001/026 Qualified ( ) High Stability Thick Film Resistor Chips thick film chip resistors are specially designed to meet the requirements of the ESA 4001/026 specification. They have undergone the
Thick Film Resistor Networks, Dual-In-Line, Molded DIP
Thick Film Resistor Networks, Dual-In-Line, Molded DIP FEATURES Isolated, bussed, and dual terminator schematics available 0.160" (4.06 mm) maximum seated height and rugged, molded case construction Thick
5 V, 1 A H-Bridge Motor Driver
, A H-Bridge Motor Driver DESCRIPTION The SIP200 is an integrated, buffered H-bridge with TTL and CMOS compatible inputs with the capability of delivering up to A continuous current at DD supply. The SIP200
Metal Film Resistors, Pulse Withstanding Protective
End of Life - August 213 www.vishay.com Metal Film Resistors, Pulse Withstanding Protective STANDARD ELECTRICAL SPECIFICATIONS GLOBAL HISTORICAL POWER RATING P 7 C W FEATURES Special design provides lightning
Precision Surface Mount Resistors Wirewound or Metal Film Technologies
Precision Surface Mount Resists irewound Metal Film Technologies FEATURES Accding to CECC 40402-801 (wirewound) ide range of ohmic values (0.04 to 1 M) Low temperature coefficient (± 25 ppm/ C available)
Knob Potentiometer with Switch
Knob Potentiometer with Switch The is a revolutionary concept in panel mounted potentiometers. This unique design consists of a knob driving and incorporating a cermet potentiometer. Only the mounting
Standard Thick Film Chip Resistors
Standard Thick Film Chip Resistors FEATURES Stability R/R = 1 % for 00 h at 70 C 2 mm pitch packaging option for size Pure tin solder contacts on Ni barrier layer provides compatibility with lead (Pb)-free
Pulse Proof, High Power Thick Film Chip Resistors
Pulse Proof, High Power Thick Film Chip Resistors STANDARD ELTRICAL SPIFICATIONS MODEL CASE SIZE INCH CASE SIZE METRIC POWER RATING P 70 W LIMITING ELEMENT VOLTAGE U max. AC/DC -HP e3 FTURES Excellent
Y.LIN ELECTRONICS CO.,LTD.
Features Current transfer ratio (CTR 50~600% at I F =5mA, V CE =5V) High isolation voltage between input and output (Viso=5000 V rms ) Creepage distance >7.62 mm Operating temperature up to +110 C Compact
NTC Thermistors, Mini Lug Sensors
NTC Thermistors, Mini Lug Sensors QUICK REFERENCE DATA PARAMETER VALUE UNIT Resistance value at 25 C 10K to 47K Tolerance on R 25 -value ± 2 to ± 3 % B 25/85 -value 3740 to 3984 K Tolerance on B 25/85
Power MOSFET FEATURES. IRF540PbF SiHF540-E3 IRF540 SiHF540. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 100 V Gate-Source Voltage V GS ± 20
Power MOSFET PRODUCT SUMMARY (V) 100 R DS(on) ( ) = 0.077 Q g (Max.) (nc) 72 Q gs (nc) 11 Q gd (nc) 32 Configuration Single TO220AB G DS ORDERING INFORMATION Package Lead (Pb)free SnPb G D S NChannel MOSFET
Power SMD LED PLCC-2 Plus
Power SMD LED PLCC-2 Plus 2238 DESCRIPTION The VLMW51.. white LED in PLCC-2 plus package is an advanced product in terms of high luminous flux and low thermal resistance. In combination with the small
N-Channel 20-V (D-S) 175 C MOSFET
N-Channel -V (D-S) 75 C MOSFET SUD7N-4P PRODUCT SUMMARY V DS (V) r DS(on) ( ) (A) a.37 @ V GS = V 37.6 @ V GS = 4.5 V 9 TO-5 D FEATURES TrenchFET Power MOSFET 75 C Junction Temperature PWM Optimized for
Knob Potentiometer FEATURES. P16NP P16NM Panel Cutout. Thickness nut 2 mm washer 1.5 mm. Panel sealing ring 12 wrench Thread M10 x 0.75 10.2 9.
Knob Potentiometer P6, PA6 FEATURES Test according to CECC 4000 or IEC 60393- P6 - Version for professional and industrial applications (cermet) W at 40 C PA6 - Version for professional audio applications
Standard Recovery Diodes, (Stud Version), 40 A
Standard Recovery Diodes, (Stud ersion), 40 A S- FEATURES High surge current capability Stud cathode and stud anode version Leaded version available DO-203AB (DO-5) PRODUCT SUMMARY I F(A) 40 A Package
